JPH0974093A - Interlayer insulating film and/or composition for surface protection film of semiconductor substrate and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve reliability of moisture-proof characteristic for an interlayer insulating film of semiconductor substrate having excellent heat-proof characteristic, lower dielectric constant and lone humidity absorbing characteristic and/or composition for surface protection film and a semiconductor device utilizing the same composition. SOLUTION: An interlayer insulating film of a semiconductor substrate including polyquinoline resin or polyquinoxaline resin and/or composition for surface protection film and a semiconductor device using a film including polyquinoline resin or polyquinoxaline resin as the interlayer insulating film of the semiconductor substrate and/or surface protection film.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a composition for an interlayer insulating film and / or a surface protective film of a semiconductor substrate, and a polyquinoline resin film or a polyquinoxaline resin film suitable as an interlayer insulating film and / or a surface protective film between conductor layers. The present invention relates to a semiconductor device having a multilayer wiring structure used.

[0002]

2. Description of the Related Art Conventionally, a polyimide resin has higher flatness than an inorganic insulating film such as silicon dioxide formed by a chemical vapor deposition method or the like. Widely used for surface protection film.

However, the polyimide resin has problems such as low heat resistance, high dielectric constant, and hygroscopicity, and its application is limited to some devices such as bipolar ICs in terms of reliability. Was there.

[0004]

An object of the present invention is to solve the above-mentioned problems of the prior art, to provide an interlayer insulating film and / or an interlayer insulating film of a semiconductor substrate having excellent heat resistance, low dielectric constant and low hygroscopicity. An object of the present invention is to provide a composition for a surface protective film and a semiconductor device using the same, which has excellent moisture resistance reliability.

[0005]

The present invention relates to a composition for an interlayer insulating film and / or a surface protective film of a semiconductor substrate containing a polyquinoline resin or a polyquinoxaline resin. Further, the present invention is a semiconductor device using a polyquinoline resin or a film containing a polyquinoxaline resin as an interlayer insulating film and / or a surface protective film of a semiconductor substrate.

[0006]

BEST MODE FOR CARRYING OUT THE INVENTION The polyquinoline resin or polyquinoxaline resin in the present invention is a polymer having a quinoline ring or a quinoxaline ring in a repeating unit. Examples of the polyquinoline resin in the present invention include US Pat. No. 4,000,187 and US Pat. No. 5,01.
7,677, US Pat. No. 5,247,050, Macromolecules, Vol. 14 (1
981), pages 870-880 (JK Stille), etc., together with the synthetic method. Examples of the polyquinoxaline resin in the present invention include J. Macromol. Sci.-Rev. Macromol. Chem.
1971, C6,1 (PMHergenrother), Encyclopedia of Polym
er Science and Technology; Interscience: New York, 196
9, vol.11p389 (JKStille), Polymer Eng. And Sci. 197
6,16,303 (PM Hergenrother), JP-A-3-12212
No. 4, Japanese Patent Application Laid-Open No. 5-295114 and the like together with the synthesis method.

In addition to the above-mentioned method, the polyquinoline resin is a difluoromonomer having a quinoline ring, a diol monomer and optionally a monofluoromonohydroxy monomer (usually, the fluoro group and the hydroxy group are almost equivalent to each other. It can also be produced by heating each monomer and a base in an anhydrous solvent in such a use ratio that azeotropically removes water. It can also be produced by heating monofluoromonohydroxy monomer and a base in an anhydrous solvent to azeotropically remove water. The heating conditions at this time are appropriately determined in consideration of the azeotropic temperature / reflux temperature of the solvent to be used, but are usually 100 to 250 ° C. and 1 to 24 hours.

Examples of the difluoromonomer having a quinoline ring include 2- (2-fluorophenyl) -5-fluoro-4-phenylquinoline, 2- (4-fluorophenyl) -5-fluoro-4-phenylquinoline, 4-
(2-fluorophenyl) -5-fluoro-2-phenylquinoline, 2- (4-fluorophenyl) -7-fluoro-4-phenylquinoline, 2,4-difluoroquinoline, 2,7-difluoroquinoline, 2, 5-difluoroquinoline, 2,7-difluoro-6-phenylquinoline, 4- (4-fluorophenyl) -7-fluoroquinoline, 6,6'-bis [2- (4-fluorophenyl)
-4-phenylquinoline], 6,6'-bis [2- (2
-Fluorophenyl) -4-phenylquinoline], 6,
6'-bis [2- (4-fluorophenyl) -4-tert
-Butylquinoline], 6,6'-bis [4- (4-fluorophenyl) -2-phenylquinoline], 6,6'-bis-4-fluoroquinoline, 6,6'-bis [4- (4
-Fluorophenyl) -2- (2-pyridyl) quinoline], 6,6'-bis-2-fluoroquinoline, 6,
6'-bis [4- (4-fluorophenyl) -2- (methyl) quinoline], 6,6'-bis [2-fluoro-4
-Phenylquinoline], oxy-6,6'-bis [2-
(4-Fluorophenyl) -4-phenylquinoline],
1,4-benzene-bis-2,2- [4- (4-fluorophenyl) quinoline], 1,4-benzene-bis-
2,2- [4-fluoroquinoline], 1,4-benzene-bis-4,4- [2- (4-fluorophenyl) quinoline], 1,1,1,3,3,3-hexafluoroisopropyl Ridene-bis-[(4-phenoxy-4-phenyl) -2- (4-fluoroquinoline)] and the like. These are used alone or in combination of two or more.

Examples of the diol monomer include resorcinol, hydroquinone, 4,4'-dihydroxybiphenyl, 1,3-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, 2,7-dihydroxynaphthalene and 3,4'-dihydroxybiphenyl. , 3,3'-dihydroxybiphenyl, methyl-2,4-dihydroxybenzoate, isopropylidene diphenol (bisphenol A), hexafluoroisopropylidene diphenol (bisphenol AF), trifluoroisopropylidene diphenol, phenolphthalein, phenol Red, 1,2-di (4-hydroxyphenyl) ethane, di (4-hydroxyphenyl) methane, 4,4-
Dihydroxy benzophenone etc. are mentioned. These are used alone or in combination of two or more.

Examples of monofluoromonohydroxy monomers include 2- (4-fluorophenyl) -6-hydroxy-4-phenylquinoline, 2- (2-fluorophenyl) -6-hydroxy-4-phenylquinoline and 4
-(2-fluorophenyl) -6-hydroxy-2-phenylquinoline, 2,3-diphenyl-4- (2-fluorophenyl) -6-hydroxyquinoline, 2,3-diphenyl-4- (4-fluorophenyl ) -6-Hydroxyquinoline, 2,3-diphenyl-6- (2-fluorophenyl) -4-hydroxyquinoline, 2,3-diphenyl-6- (4-fluorophenyl) -4-hydroxyquinoline, 7-fluoro -2-hydroxyquinoline,
7-fluoro-2-hydroxy-4-phenylquinoline, 7- (4-fluorophenyl) -2-hydroxy-
4-phenylquinoline, 7-fluoro-4-hydroxy-4-phenylquinoline, 7- (4-fluorophenyl) -4-hydroxy-2-phenylquinoline, 2-
(4-fluorophenyl) -4-hydroxy-3-phenylquinoline, 2- (4-fluorophenyl) -6-hydroxy-3-phenylquinoline, 2- (4-fluorophenyl) -8-hydroxy-3-phenyl Quinoline,
2- (4-fluorophenyl) -8-hydroxyquinoline, 2- (2-fluorophenyl) -4- (4-hydroxyphenyl) quinoline and the like can be mentioned. These are used alone or in combination of two or more.

Examples of the solvent include N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone, tetramethylurea, dimethylsulfoxide, sulfolane, diphenylsulfone, toluene and dichlorobenzene. . These are used alone or in combination of two or more. Examples of the base include potassium carbonate, potassium hydroxide, sodium carbonate, sodium hydroxide, metal hydride, metal amide, butyllithium and the like. They are,
Used alone or in combination of two or more.

The polyquinoline resin has the following general formula (I) or general formula (II) from the viewpoints of handleability, electrical characteristics, low hygroscopicity and the like.

Embedded image [In the formula, R ¹ and R ² are each independently an alkyl group, an aryl group, an alkoxy group, an allyloxy group, a formyl group (-COH), a ketone group (-COR ³ ), an ester group (-CO ₂ R ⁴ Alternatively, -OCOR ⁵ ), an amide group (-N
R ⁶ COR ⁷ or —CONR ⁸ R ⁹ ), a heteroaryl group, a cyano group, or a divalent hydrocarbon group which may contain an unsaturated bond formed by connecting two groups, provided that
R ^{3 to} R ⁹ represent a hydrogen atom, an alkyl group, an aryl group or a heteroaryl group), and m and n each independently represent 0 to
Is an integer of 5, X is none (chemical bond),

Embedded image (However, q is an integer of 1 to 3, and A is -Ar ^1-
(Arylene group), -Hr ^1- (heteroarylene group),
^{-Ar 1 -O-Ar 1 -,} - Ar 1 -CO-Ar 1 -, - A
r ¹ -S-Ar ^1- , -Ar ¹ -SO-Ar ^1- , -Ar ¹
-SO ₂ -Ar ¹ -or -Ar ¹ -Q-Ar ¹ is shown, and Q is

Embedded image (L ¹ and L ² are a methyl group, a trifluoromethyl group or 2
Z ¹ and Z ² each independently represent absent (chemical bond) or an arylene group; Represents -O- or -O-A-O-]], and is preferably a polyquinoline resin having a repeating unit represented by the following formula:

In the above general formula (I) or general formula (II), examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a sec-butyl group and a tert-butyl group. Group, pentyl group, cyclopentyl group, hexyl group, cyclohexyl group, heptyl group, octyl group, 2-ethylhexyl group, decyl group, undecyl group, dodecyl group, docosyl group and the like. Examples of the aryl group include a phenyl group, a biphenyl group, a naphthyl group, an anthracenyl group, a diphenylphenyl group and the like. Examples of the heteroaryl group include a pyridyl group, a quinolinidyl group, and a pyrazyl group.

Two R ¹ , two R ² , and L ¹ and L ²
Examples of the divalent hydrocarbon group which may be connected to each other and may include an unsaturated bond include, for example,
1,3-propylene group, 1.4-butylene group, 1,5-
An alkylene group such as a pentylene group,

Embedded image And the like.

The polyquinoxaline resin is easy to handle,
From the viewpoints of electrical characteristics, low moisture absorption, etc., the following formula (III)
Or general formula (IV)

Embedded image [Wherein R ^{1 to} R ⁹ , X, Z ¹ , Z ² , Y, m and n have the same meanings as in the above general formula (I) and general formula (II)] Is preferred.

The molecular weights of the polyquinoline resin and the polyquinoxaline resin are not particularly limited as long as the composition of the present invention can be applied to the substrate as a uniform film, but the standard polystyrene can be calibrated by gel permeation chromatography (GPC). The weight average molecular weight as measured using a line is usually 10,000 to 1,000,000, and preferably 20,000 to 200,000. The molecular weight of the resin can be appropriately selected according to the purpose and conditions of the coating film formation, such as the thickness of the cured coating film to be formed and the coating method. The number average molecular weight is 1,000 to 400,0.
00 is preferable and 5,000 to 200,00
More preferably, it is 0.

The polyquinoline resin and polyquinoxaline resin are dissolved in an organic solvent to form a composition for an interlayer insulating film and / or a surface protective film of a semiconductor substrate. The organic solvent is not particularly limited as long as it dissolves the composition of the present invention and does not react with these components. Specific examples thereof include aromatic solvents such as phenol and cresol; ketone solvents such as cyclopentanone and cyclohexanone; ether solvents such as tetrahydrofuran, diethylene glycol dimethyl ether and diethylene glycol diethyl ether; ester solvents such as γ-butyrolactone; dimethyl. Examples include amide solvents such as formamide, dimethylacetamide and N-methylpyrrolidone. Of these solvents, ketone solvents and amide solvents are preferable, and they can be used alone or in combination of two or more.

The blending amount of these organic solvents is preferably 100 to 3500 parts by weight with respect to 100 parts by weight of the above polyquinoline resin or polyquinoxaline resin.
More preferably, it is from 00 to 1500 parts by weight. If the blending amount of the organic solvent is too small, the ratio of the solid content is high, so that the coatability is poor and it becomes difficult to keep the thickness of the coating film surface constant. If the amount of the organic solvent is too large, it is difficult to obtain a stable coating film because the viscosity is low.

An example of the manufacturing process of the semiconductor device of the present invention will be described below. FIG. 1 is a manufacturing process diagram of a semiconductor device having a multilayer wiring structure. In the figure, Si having a circuit element
A semiconductor substrate 1 such as a substrate, a glass plate or a metal plate is covered with a protective film 2 such as a silicon oxide film except for a predetermined portion of a circuit element, and a first conductor layer 3 is formed on the exposed circuit element. . The aforementioned quinoline resin is applied to the semiconductor substrate by a spinner method or the like, and the solvent is removed by heat treatment to form a polyimide resin film 4 as an interlayer insulating film (step (a)).

Next, a chlorinated rubber type or phenol novolac type photosensitive resin layer 5 is formed on the interlayer insulating film 4 by a spinner method, and a predetermined portion of the interlayer insulating film 4 is exposed by a known photo-etching technique. The window 6A is provided in the (step (b)).

The interlayer insulating film 4 in the window 6A is selectively etched by dry etching means using a gas such as oxygen or carbon tetrafluoride to open the window 6B. Then, the photosensitive resin layer 5 is completely removed using an etching solution that corrodes only the photosensitive resin layer 5 without corroding the first conductor layer 3 exposed from the window 6B (step (c)).

Further, the second conductor layer 7 is formed by using the well-known metal film forming method and the photo-etching technique, and the electric connection with the first conductor layer 3 is completed (step (d)).

When forming a multilayer wiring structure having three or more layers, the above steps are repeated to form each layer. That is, a step (a) of forming an interlayer insulating film to be an insulating layer on the conductor layer, and a step (b) of selectively removing a predetermined portion of this film to open a window to expose the conductor layer underneath. ,
(C) and the step (d) of forming an upper conductor which extends on the coating film and is connected to a predetermined portion of the conductor layer in the lower portion are repeated.

Next, a surface protection film 8 is formed. The protective film 8 is manufactured by applying the above-mentioned polyamic acid on the uppermost conductor layer of the semiconductor device having the multilayer wiring structure in the same manner and then forming the window 6C at a predetermined portion (step (e)). The conductor layer can be protected from external moisture, foreign matter, and the like by the surface protection film 8.

In the semiconductor device of the present invention, even if the above-mentioned polyquinoline resin film or polyquinoxaline resin film is used only for either interlayer insulation or surface protection of the semiconductor device, both interlayer insulation and surface protection of the semiconductor device are achieved. May be used for. Further, the polyquinoline resin film or the polyquinoxaline resin film may be used as a buffer coat film of a semiconductor device, for example, it is formed on the surface protection film 8 and the film is formed by a method similar to this. It is formed.

[0026]

The present invention will be described below in more detail with reference to examples.

Synthesis Example 1 [Synthesis of 6-chloro-2- (4 "-fluorophenyl) -4-phenylquinoline] A thermometer, a stirrer, a calcium chloride tube and a Dean-Stark tube for removing water were attached. In a 2 liter 3 flask equipped with a water-cooled cooling tube and a dry nitrogen introduction tube,
2-Amino-5-chlorobenzophenone 695.0 g
(3.00 mol), 4-fluoroacetophenone 45
6.0 g (3.30 mol), p-toluenesulfonic acid 4
Charge 7.62 g (0.25 mol) and under nitrogen 165
The mixture was stirred while heating at 0 ° C for 44 hours. During heating, yellow 4-fluoroacetophenone distilled out together with water was separated from water and returned to the reaction system. Further heating at 190 ° C. for 2 hours, then cooling to 120 ° C., pouring the reaction mixture into 10 liters of 95% ethanol with vigorous stirring, then adding 1 liter of crude material collected by filtration. It was washed with ethanol. The obtained solid was dried at 80 ° C. for 16 hours in a vacuum drier to obtain the target compound 6-chloro-2- (4 ″ -fluorophenyl) -4-phenylquinoline) (mp 141.0 to 142.1 ° C.). 969
g (yield 97%).

Synthesis Example 2 [6,6'-bis (2- (4 "-
Synthesis of fluorophenyl) -4-phenylquinoline)] 1 liter 3 equipped with a thermometer, a stirrer, a water-cooled cooling tube equipped with a calcium chloride tube and a Dean-Stark tube for removing water, and a dry nitrogen introduction tube In a flask
6-Chloro-2- (4-fluorophenyl) -4-phenylquinoline 100.0 g (0.3 mol), bis (triphenylphosphine) nickel dichlorite 2.72
79 (4.16 mmol), sodium iodide 5.60
g (37.48 mmol), triphenylphosphine 32.76 g (133.2 mmol), active zinc powder 1
2.52 g (191.6 mmol) and N-methyl-2
-Pyrrolidone (344 ml) was charged and stirred under nitrogen with heating at 70 ° C for 16 hours. Then N
-Methyl-2-pyrrolidone (40 ml) was added, the temperature was raised to 170 ° C, and the reaction mixture was filtered through Celite. The mother liquor was cooled to −20 ° C. and the yellow solid collected by filtration of the product was washed with cold ethanol / methylene chloride (weight ratio 3/1) and dried in a vacuum oven at 100 ° C.
The target compound, 6,6'-bis (2-
(4 ″ -fluorophenyl) -4-phenylquinoline)
(Mp 280 to 282 ° C.) 76.3 g (yield 85
%).

Synthesis Example 3 (Synthesis of polyquinoline) 6,6'-bis (2- (4 "-fluorophenyl) -4
-Phenylquinoline) 74.3 g (0.124 mol,
1.03 equivalent), 4,4 '-(1,1,1,3,3,3
-Hexafluoro-2,2-propylidene) bisphenol 40.6 g (0.121 mol, 1.00 equivalent), anhydrous potassium carbonate 25 g (0.181 mol, 1.5 equivalent)
Was added to a 1-liter stainless steel flask, and 450 ml of N-methyl-2-pyrrolidone and 90 ml of toluene were further added as solvents. A water-cooled cooling tube equipped with a calcium chloride tube and a Dean-Stark tube for removing water, a dry nitrogen introduction tube, a mechanical stirrer, and a thermometer were installed. Using an oil bath, the mixture was heated under reflux for 24 hours, and water in the system was distilled off together with toluene for 24 hours. The solution was initially yellow, but gradually turned brown and black at this stage. The reaction temperature was further raised to 200 ° C., and the reaction was performed for 6 hours. The reaction solution changed from black to deep blue as the viscosity increased. N
The reaction was stopped by the addition of 650 ml of methyl-2-pyrrolidone to dilute and cool. The obtained polymer solution was poured into water and precipitated for purification. Subsequently, stirring and washing in water at 50 ° C. for 2 hours and washing were repeated 3 times, and then the polymer was separated by filtration and 60 ° C.
It was dried overnight in a vacuum dryer. Polymer yield is 1
It was 01.1 g (89.0%). The weight average molecular weight of this product was 87,000 in terms of polystyrene.

The obtained polymer has a repeating unit represented by the following formula (V).

[Chemical 6]

Synthesis Example 4 (Synthesis of Polyquinoline) In a 2 liter round bottom three-necked flask equipped with a mechanical stirrer, a Dean-Stark tube equipped with a condenser and a nitrogen introducing tube, and a thermometer, 6,6'-bis (2- (4 ″-
Fluorophenyl) -4-phenylquinoline) 114.
75 g (0.9225 mol, 1.03 eq), 9,9-
Bis (4-hydroxyphenyl) fluorene 66.04
72 g (0.18848 mol, 1.00 eq), potassium carbonate 39.1 g (0.28 mol, 1.5 eq), N-
Methyl-pyrrolidone 705 ml, toluene 42
I charged 1 ml. The reaction mixture was heated under a nitrogen atmosphere for 15 hours. The toluene was removed via a Dean-Stark tube and the reaction mixture was further heated at 200 ° C. for 12 hours. The reaction mixture was then diluted with N-methyl-pyrrolidone and cooled to room temperature. The polymer was condensed by slowly pouring the obtained polymer solution into 3 volumes of acetone. The polymer is collected by filtration, N
Dissolved in -methyl-pyrrolidone and condensed with 3 volumes of water. Also, the polymer was collected and dried at 130 ° C. under vacuum for 12 hours. The polymer yield was 170 g (99%). Its number average molecular weight was 46,900 in terms of polystyrene, and its glass transition point was about 306 ° C.

The obtained polymer has a repeating unit represented by the following formula (VI).

[Chemical 7]

Example 1 To 100 parts by weight of the polyquinoline resin obtained in Synthesis Example 3, 680 parts by weight of cyclopentanone was added and uniformly mixed and dissolved at room temperature to obtain a polyquinoline resin solution. This solution is applied to the silicon oxide film 2 in the step (a) of FIG.
After spinner coating was performed at a rotation speed of 4000 rpm on the semiconductor substrate 1 of a glass plate using aluminum as the first conductor layer 3 and then 130 to 140 ° C. in a hot air circulation type oven.
Then, heat treatment was performed for 30 minutes to form the interlayer insulating film layer 4. Next, in order to selectively remove only a predetermined portion of the insulating film layer 4,
A phenol novolac resin-based photosensitive resin (positive photoresist, AZ-1350J Hoechst) layer 5 was formed on the layer 4 by spinner coating at a rotation speed of 3000 rpm, and exposed by a known photo-etching technique. Tetramethylammonium hydroxide aqueous solution developer (NMD-
3, Tokyo Ohka Co., Ltd.) to develop a resist, open the window 6A, and then selectively etch the insulating film layer 4 by a known dry etching technique to open the window 6B and open the first conductor layer 3 Was exposed at this part. After that, the first conductor layer 3
The photosensitive resin layer 5 was completely removed by immersion treatment for 2 minutes at room temperature using a resist stripping solution (acetone) that etches only the photosensitive resin layer 5 without corroding the photosensitive resin layer 5.

Next, the interlayer insulating film layer 4 is post-heat treated to 23.
The polyquinoline resin film having a film thickness of about 3 μm, which was completely cured by treatment at 0 ° C. for 60 minutes, was obtained. Further, the second conductor layer 7 made of aluminum was formed by using the well-known vacuum deposition method, sputtering method and photolithography technique, and the electrical connection with the first conductor layer 3 was completed. Further, a polyquinoline resin solution was applied on the obtained multilayer wiring structure on the second conductor layer 7 at a rotation speed of 4000 rp.
A surface protective film layer 8 was formed by the same method as that for forming the interlayer insulating film layer 4 by spinner coating at m, and a semiconductor device was manufactured. Since the surface protective film layer 8 is not subjected to the windowing (selective etching of the polyquinoline resin film) treatment as shown in step (e) of FIG. 1, the second conductor layer 7 is not exposed. After that, the semiconductor substrate is sealed (package)
No processing is done.

Example 2 A semiconductor device was prepared according to Example 1 except that the polyquinoline resin obtained in Synthesis Example 4 was used in place of the polyquinoline resin obtained in Synthesis Example 3.

<Test Example> A moisture resistance test was conducted using the semiconductor devices manufactured in Examples 1 and 2 as samples. This test was performed by observing the progress of corrosion of the aluminum wiring layer, which is the conductor layer, of each sample with a microscope over time, while allowing the sample to stand at 121 ° C. under a vapor pressure of 2 atm. As a result, A: There was no corrosion of the aluminum wiring in the semiconductor device. B: Corrosion was about 5 to 10%. C: Corrosion was about 30 to 50%. D: Corrosion was observed all over the semiconductor device. E: The aluminum wiring layer was melted. The evaluation criteria of the semiconductor devices in Examples 1 and 2 are A, indicating that the semiconductor devices have excellent moisture resistance.
Although aluminum is used as the conductor layer of the semiconductor device in the above embodiments, the present invention is not limited to aluminum.

[0037]

According to the composition for an interlayer insulating film and / or surface protective film of a semiconductor substrate in claim 1, it is possible to obtain a semiconductor device having a highly reliable multilayer wiring structure excellent in moisture resistance, Therefore, a-Si, Ga, As as well as monolithic IC and LSI Si wafer semiconductor substrates are used.
It can be applied to a semiconductor substrate in which a compound semiconductor or the like is internally manufactured. The resin film obtained from the above composition has a low dielectric constant and excellent heat resistance. The semiconductor device according to claim 2 has excellent moisture resistance and high reliability.

[Brief description of drawings]

FIG. 6 is a manufacturing process diagram of a semiconductor device having a multilayer wiring structure.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate 2 ... Protective film 3 ... 1st conductor layer 4 ... Interlayer insulating film layer 5 ... Photosensitive resin layer 6A, 6B, 6C ... Window 7 ... 2nd conductor layer 8 ... Surface protective film layer

Claims (2)

[Claims] 1. A composition for an interlayer insulating film and / or a surface protective film of a semiconductor substrate, which comprises a polyquinoline resin or a polyquinoxaline resin. 2. A semiconductor device using a film containing a polyquinoline resin or a polyquinoxaline resin as an interlayer insulating film and / or a surface protective film of a semiconductor substrate.