JPH0950758A - Electron source and manufacture thereof and manufacture of cathode-ray tube using the electron source - Google Patents

Abstract

PROBLEM TO BE SOLVED: To eliminate the lowering of the current density due to the lowering of the electric field at the tip of an emitter by the influence of the electric potential to be given to a focusing electrode. SOLUTION: A silicon substrate forming a cathode electrode 11 is fixed onto a board 14, and the surface thereof is processed so as to obtain a conical field emitter 15. An electron source is formed by laminating a drawing electrode 12 for drawing the electron from the field emitter 15 and a focusing electrode 13 for aligning the direction of the drawn electron on the board 14 through a first insulating film 17 and a second insulating film 16 in the periphery of an opening part 10 having this emitter. Usually, height of the emitter 15 is formed about 1μm and the thickness of the first insulating film 17 is formed the same thickness and the drawing electrode 12 is formed about 0.3m, but in this case, the thickness of the drawing electrode 12 is formed the same as the height of the emitter 15 or more.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a field emission type electron source used in a CRT type display, a vacuum tube, a semiconductor manufacturing apparatus, etc., a cathode ray tube using the same, and a method of manufacturing an electron source.

[0002]

2. Description of the Related Art Conventionally, as an electron source, a device utilizing thermionic emission from a hot filament has been widely used.
Field emission type using semiconductor microfabrication technology as image display devices become thinner and lighter
The development of the electron source has been attracting attention.

FIG. 27 shows, for example, Japanese Patent Laid-Open No. 2-226635.
FIG. 7 is a cross-sectional view showing a part of the configuration of the conventional field emission electron source described in Japanese Patent Publication No. In the figure, an emitter 104 forming an electron emitting portion is formed in a conical shape by processing the substrate 101 which is a cathode electrode. The insulating film 105, the extraction electrode 102, the insulating film 106, the focusing electrode 103, and the insulating film 10 are formed on the substrate 101 so as to surround the emitter 104.
7 and the acceleration electrode 108 are sequentially stacked. The voltage applied between the extraction electrode 102 and the substrate 101 (power source 10
(Voltage from 9), electrons are extracted from the tip of the emitter 104, the electrons are focused by the voltage applied to the focusing electrode 103 by the power supply 110, and the electrons are accelerated by the voltage applied to the acceleration electrode 108 by the power supply 111. , The electron beam 100 is emitted. In this embodiment, the electrode has a three-layer structure of an extraction electrode, a focusing electrode, and an accelerating electrode, and different potentials are applied to each of them, but electron emission is realized as long as there is an extraction electrode.

Next, the operation of the electron source will be described. When a positive voltage of, for example, 100 V is applied to the extraction electrode 102 by the power supply 109 with respect to the cathode electrode (substrate) 101, an electric field of about 10 ⁷ V / cm is generated at the tip of the emitter 104, and the emitter 104 causes a tunnel effect. Electrons are emitted. The magnitude of the current due to the emitted electrons is 25 to 100 μA per emitter,
Depending on the density of 04, a high current density can be obtained.
Moreover, since almost no current flows through the extraction electrode 102, power consumption is extremely small.

In the field emission electron source as described above, the emission electron beam 100 diverges due to the influence of the electric field distribution reflecting the shape of the tip of the emitter 104. For this reason, the focusing electrode 103 is devised so as to apply the same potential as the cathode electrode 101 to the focusing electrode 103 to decelerate the emitted electrons and focus the emitted electron beam 100. This is accelerated and emitted by the acceleration electrode 108 to which a positive potential is applied by the power source 111. However, it is also possible to accelerate electrons with an external anode without providing the acceleration electrode 108 for each emitter.

Such an element can simultaneously produce about 1 million emitter arrays at intervals of several μm to 10 μm by using photolithography and thin film technology.
An electron source of 00A is obtained. Moreover, the electron source has a low emittance with no power loss other than the power consumption due to the emission current flowing through the cathode electrode 101 and the electron beam not diverging.

Next, a method of forming such a conventional field emission electron source will be described. For the method of forming the field emission electron source, see, for example, a magazine “1990 Autumn Meeting of the Institute of Electronics, Information and Communication Engineers (1990) p.5-282”.
And "The 7th International Conference on Vacuum Microelectronics, 7th International V
Acuum Microelectronics Co
nference 1994 July p. 25-2
8 ". Figure 28 is a collection of papers from the 7th International Conference on Vacuum Microelectronics, 7th.
International Vacuum Mic
roelectronics Conference
1994 July p. It is a cross-sectional process drawing which shows the formation method of the field emission electron source described in 25-28 ". In the figure, (a)-(f) shows the order of a process.
Semiconductor (or conductor such as Al) substrate 10
A circular mask 112 made of SiO ₂ is formed on the surface 1 using a photoresist 113a (step (a)). Mask 1
12, the Si substrate 101 is isotropically etched, and then the substrate surface is thermally oxidized. Then, an oxide film 101a is formed along the surface of the substrate 101 of FIG. 9B (step (b)). Next, the SiO ₂ insulating layer 105 and the electrode 102 made of, for example, Nb are formed thereon (step (c)). A photoresist 113b is further provided on the electrode 102 to provide a connection terminal portion (step (d)), and S
An electrode 103 made of an iO ₂ insulating layer 106 and Nb, for example.
Are formed (step (e)). Finally photoresist 11
When 3b is removed and the circular mask 112 of SiO ₂ is removed with hydrofluoric acid, part of the oxide film 101a on the substrate 101 is also removed, and a sharp cone-shaped emitter having a tip shape as shown in FIG. 104 is obtained.

As an example, the opening diameter of the electron emission portion where the emitter 104 is located is 2-3 μm, and the height of the cone is 1 μm.
m, the tip diameter of the cone is 0.06 μm. Also, electrode 1
The thickness of 02 and 103 does not need to be thick as long as a voltage can be applied, and therefore is usually about 0.1 to 0.3.
μm. Further, the insulating layer 105 is set to have substantially the same height as the emitter (1 μm) in order to efficiently emit electrons from the tip of the emitter 104, and the thickness of the insulating layer 106 also has a withstand voltage between the electrodes 102 and 103. Considering
It is usually set to the same 1 μm as the insulating layer 105.

As an application example of the electron source as described above, CR
A T electron gun is possible. An example in which this type of electron source is applied to a CRT is described in JP-A-48-90467. However, as the electron source, the individual emitters 104
There is no mention of a configuration in which the focusing electrode 103 is provided in addition to the extraction electrode 102. FIG. 29 shows the structure of the electron gun. In the figure, an electron beam emitted from an electron source (electron source consisting of a field emitter) 121 passes through a first anode electrode 122 and a second anode electrode 123 for acceleration, and a crossover point 127 is formed by electron lenses 124 and 125. Is formed, is converged by the convergence electrode 126, is further direction-controlled by the deflection magnet 128, and is condensed by the phosphor screen of the phosphor 131 with the aluminum back 130 through the shadow mask 129.

On the other hand, as an invention relating to a field emitter type electron source, the applicant uses an electron source which is easy to fabricate and easy to address two-dimensional pixels with a simple element structure in Japanese Patent Laid-Open No. 5-198278. He has already filed an invention for a flat panel display. Furthermore, Japanese Patent Application No. 6-240169 has already applied for an invention in which a field emission electron source in which a shield electrode is arranged facing a focusing electrode in order to improve the focusing characteristic of the electron source is applied to a cathode ray tube.

[0011]

Since the conventional field emission type electron source is constructed as described above, it is necessary to apply a desired potential to the focusing electrode 103 in order to obtain an electron beam having excellent focusing characteristics. There is. When a potential higher than that of the extraction electrode is applied as a potential application method, a high voltage of the order of several kV is required, the insulating layer between the extraction electrode and the focusing electrode needs to be thickened to the withstand voltage, and power consumption increases. There was a problem. Therefore, the potential applied to the focusing electrode is lower than that of the extraction electrode, for example, 0V of the focusing electrode is applied to 100V of the extraction electrode. But,
If the potential of the focusing electrode is made lower than the potential applied to the extraction electrode, there is a problem that the electric field at the tip of the emitter is lowered due to the influence of the potential applied to the focusing electrode, and the number of electrons emitted by the tunnel effect is extremely reduced. . FIG. 30 shows the experimental results of examining changes in the anodic current and the divergence angle of the electron beam with respect to the potential applied to the focusing electrode. The figure is shown by standardizing the value at the voltage of the focusing electrode of 100V. The higher the voltage applied to the focusing electrode, the larger the anodic current, that is, sufficient electron beam intensity is obtained, while the electron beam diverges. When the voltage applied to the focusing electrode is reduced, the electron beam is focused but the current value is drastically reduced.

The present invention has been made to solve the above problems, and has a high current density and good focusing characteristics such that the anode current does not decrease even if the voltage applied to the focusing electrode is reduced. The purpose is to provide an excellent electron source. That is, a structure of an electron source that does not affect the emitter by the voltage applied to the focusing electrode is provided, and further, a cathode ray tube equipped with the high-performance electron source is provided, and a method of manufacturing a high-performance electron source. The purpose is to provide.

[0013]

An electron source according to the present invention has an opening formed on a cathode electrode having a substantially conical electron emitting portion, and a first electron emitting portion is formed in order so as to surround the electron emitting portion.
An insulating layer, an extraction electrode for extracting electrons from the cathode electrode portion, a second insulating layer, and a focusing electrode for focusing the extracted electrons are arranged, and an electric field formed by a potential applied to the focusing electrode. And a means for shielding the influence of the cathode electrode on the electron emitting portion.

The means for blocking the influence of the electric field formed by the potential applied to the focusing electrode on the electron emitting portion of the cathode electrode is a means for keeping the distance between the focusing electrode and the cathode electrode by a predetermined distance or more. It stipulates that there is.

Further, the means for keeping the distance between the focusing electrode and the cathode electrode by a predetermined distance or more is such that the ratio of the thickness of the extraction electrode to the height of the substantially conical electron emitting portion of the cathode electrode is 0.
It defines that the lead electrode has a thickness of 5 or more.

Further, the means for making the distance between the focusing electrode and the cathode electrode a predetermined distance or more is such that the ratio of the thickness of the extraction electrode to the height of the substantially conical electron emitting portion of the cathode electrode is 1 or more. It defines that it is an electrode.

Further, the corner portion of the extraction electrode in the opening is defined to be a flat surface with respect to the electron emitting portion.

Further, the means for making the distance between the focusing electrode and the cathode electrode a predetermined distance or more is such that the ratio of the thickness of the second insulating layer to the height of the substantially conical electron emitting portion of the cathode electrode is 2.
The second insulating layer has a thickness of 5 or more.

Further, a means for shielding the influence of the electric field formed by the potential applied to the focusing electrode on the electron emitting portion of the cathode electrode is provided between the focusing electrode and the extraction electrode (first extraction electrode). It is defined that the extraction electrode is provided.

Further, means for shielding the influence of the electric field formed by the potential applied to the focusing electrode on the electron emitting portion of the cathode electrode is on the same plane as the focusing electrode and on the opening side of the focusing electrode. It is provided that the second extraction electrode is provided.

Further, it defines that the extraction electrode (first extraction electrode) and the second extraction electrode have the same potential.

Further, it defines that the extraction electrode (first extraction electrode) and the second extraction electrode are connected to each other at the inner surface of the opening.

Further, it defines that the extraction electrode (first extraction electrode) and the second extraction electrode are connected outside the opening.

The electric potential applied to the second extraction electrode is defined to be higher than the electric potential applied to the extraction electrode (first extraction electrode).

Further, in the cathode ray tube according to the present invention, an electron source having any one of the above structures, a means for focusing the electron beam emitted from the electron source, and a fluorescent light for the focused electron beam are provided in a vacuum container. And means for deflecting and guiding the body to a predetermined position.

Further, in the method for manufacturing an electron source according to the present invention, the first insulating layer is formed so that the opening for disposing the electron emitting portion is formed on the cathode electrode having the electron emitting portion having a substantially conical shape. In a method of manufacturing an electron source, in which an extraction electrode for extracting electrons from the cathode electrode portion, a second insulating layer, and a focusing electrode for focusing the extracted electrons are sequentially stacked, a cathode electrode material is provided. The thickness of the mask material for forming the electron-emitting portion having a substantially conical shape is determined such that the occupancy rate of the layer on the mask material in the opening in the opening is smaller than the size of the opening when forming all layers. The first step, the second step in which the thickness is determined by the first step, and the electron-emitting portion having a substantially conical shape is formed in the cathode electrode by using the mask formed on the cathode electrode; A third step of forming a first insulating layer, an extraction electrode, a second insulating layer, and a focusing electrode, each having a predetermined thickness on the plate in order, a mask formed on the cathode electrode, and a layer on the mask are formed. And a fourth step of removing.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1. Embodiment 1 of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a main part of an electron source according to the first embodiment, and FIG. 2 is a schematic plan view showing a connection state of electrodes. In the figure, a silicon substrate constituting the cathode electrode 11 is fixed on a substrate 14 made of, for example, a glass material, and the surface is processed to obtain a conical field emitter 15. The electron source is a focusing electrode that forms an electron lens for applying an electric field to the field emitter 15 to extract the electron on the substrate 14 around the opening 10 having the emitter, and an electron lens for aligning the direction of the extracted electron. The electrodes 13 are stacked with the first insulating film 17 and the second insulating film 16 interposed therebetween. The openings 10 and the field emitters 15 have a diameter of 2 μm at a pitch of 7.5 μm, for example.
They are arranged in a region of 00 μm, and the number thereof is 600 or more although not shown in the drawing. Field emitter 1
As shown in FIG. 1, the tip of 5 is substantially the extraction electrode 12
It is almost as high as the bottom surface of.

Further, as shown in FIG. 2, the focusing electrode 13
Is formed so as to have a circular shape having a diameter of 400 μm and having an opening 10 at the center, that is, an electron emission region when viewed from above. However, 1 place, bonding terminal (electrode terminal)
The linear wiring 22 connected to 23 extends and is exposed in the upper space. Similarly, the bonding terminals (electrode terminals) 19 and 18 of the extraction electrode 12 and the cathode electrode 11 are also exposed in the space, and the linear wirings 21 and 20 connecting these terminals 19 and 18 to the electrodes are also extracted. It extends to the outside of the cathode electrode 11. Further, the bonding wires 18, 19 and 23 are provided with a conductor 2 for supplying a voltage.
6, 24 and 25 are respectively connected. In this way, the bonding terminals 18, 19, 23 and the wirings 20, 21, which constitute the terminal portions for supplying power to the electrodes 11, 12, 13
Part of the wire 22 and the conductors 26, 24, 25 are exposed to the electron emission space side.

Next, the operation of this electron source will be described.
+60 to + for the extraction electrode 12 and for the cathode electrode 11
A voltage of 110V is applied. Further, a voltage of 0 to +20 V is applied to the focusing electrode 13 with respect to the cathode electrode 11.
At this time, since the extraction electrode 12 is sufficiently thick, the influence of the electric field from the focusing electrode 13 that reduces the electric field at the tip of the emitter 15 can be shielded, and the influence of the electric field from the focusing electrode 13 can be reduced. FIG. 3 is an electric field analysis result using the difference method showing the relationship between the thickness of the extraction electrode (gate electrode) and the current emitted from the tip of the emitter. The horizontal axis represents the ratio of the thickness of the extraction electrode (gate electrode) 12 to the height of the emitter 15, and the vertical axis represents the current value emitted from the tip of the emitter 15 with the current value when the focusing electrode 13 is not used as 100%. It has been transformed. In the figure, point A is the focusing electrode 13.
And the ratio of the emission current under the conventional film thickness conditions (emitter height 1 μm, gate electrode thickness 0.3 μm), the current emitted from the tip of the emitter 15 is increased by increasing the thickness of the extraction electrode 12. It can be seen that For example,
Thickness of extraction electrode (gate electrode) 12 and emitter 15
If the height ratio is 2 or more, the emission current can be 80% or more. By thus thickening the extraction electrode (gate electrode), an electron beam having a high current density and excellent focusing characteristics can be obtained.

On the other hand, if the lead electrode (gate electrode) is thickened, the pitch p between the emitters in FIG.
The number of emitters per unit area when a plurality of emitters are formed into electron sources is reduced. Therefore, when a plurality of emitters are formed and used as an electron source, the total emission current from all emitters is determined by the emission current from each emitter and the number of emitters. FIG. 4 shows the total emission current with respect to the ratio of the thickness of the extraction electrode (gate electrode) to the height of the emitter when the total emission current of the emitter group having the focusing action and no decrease in emission current is 100%. It shows the relationship.

In FIG. 3, when the ratio of the thickness of the extraction electrode (gate electrode) to the height of the emitter is 2 or more, the emission current per emitter can be 80% or more, and further, the extraction electrode (gate electrode). It was found that the ratio of the thickness of the emitter to the height of the emitter was 4, and it was possible to secure the same level as the total emission current of the emitter group when the focusing electrode was not used. Further, as shown in FIG. 4, as long as the ratio of the thickness of the extraction electrode (gate electrode) to the height of the emitter is 1 or more in the emitter group, a total emission current of the same level or higher than the conventional one can be obtained. You can see that

On the other hand, as a method of improving the total emission current, there is a method of optimizing the material of the electrode and the applied voltage. For example, refer to the paper "7th International Conference on Vacuum Microelectronics, 7th International
al Vacuum Microelectronic
s Conference 1994 July p.
405-407 ", it is reported that the total emission current is improved by anodizing the emitter. That is, the decrease in the total emission current depends on other parameters such as electrode material and applied voltage. It is possible to compensate by optimizing, and it is possible to compensate for the total emission current up to 100% (2.5 times) if it is at least 40% in FIG. If the ratio of the thickness of the electrode (gate electrode) to the height of the emitter is 0.5 or more, it is possible to obtain a total emission current of the same level as or higher than the conventional one.

It is preferable that the thickness of the extraction electrode (gate electrode) is thick, but it is difficult to make the electrode thick because of the process.
Further, when the thickness is increased in FIG. 4, the total current tends to decrease.
If the emitter height is 1 μm, the limit is about 10 times 10 μm. Further, when the electron source is made thinner and the emitter is lowered, the increasing inclination in FIG. 3 becomes gentle, and also in FIG. 4, the increasing inclination becomes gentle. In that case, it is necessary to further increase the thickness of the electrode with respect to the height of the emitter, and in that case, there is a possibility that the thickness is 10 times or more. Also,
It is not necessary to consider that the emitter height is larger than 1 μm by one digit or more because it is difficult to reduce the thickness of the electron source and is difficult in the process.

In FIG. 5, the film thickness of the extraction electrode is changed from the conventional film thickness of 0.3 μm to 3 μm (at this time, the height of the emitter is 1 μm).
The experimental result which investigated the change of the anode current when it thickened to m) is shown. Even if the voltage applied to the focusing electrode was reduced, the decrease in the anodic current was suppressed, and a sufficient current density as an electron source could be secured. Further, in combination with FIG. 30 described in the conventional problem, it was possible to provide an electron source having a low applied voltage to focus electron beams and a high current density.

The electrons emitted from the tip of the field emitter 15 are decelerated by the electric field formed by the focusing electrode 13, focused, and emitted toward the anode provided outside the electron source.

Further, although the electron source having a plurality of emitters has been described in the above embodiment, one emitter itself may constitute one electron source.

Embodiment 2. A second embodiment of the present invention will be described with reference to the drawings. FIG. 6 is a sectional view showing a main part of the electron source according to the second embodiment. In the figure, the difference from the prior art is that the thickness of the second insulating film 16 between the extraction electrode 12 and the focusing electrode 13 is made sufficiently thick.

Next, the operation of the electron source in the thus constructed one will be described. A voltage of +60 to +110 V, for example, is applied to the extraction electrode 12 with respect to the cathode electrode 11. In addition, the focusing electrode 13 has a cathode electrode 1
For example, a voltage of 0 to +20 V is applied to 1. At this time, the focusing electrode 1 that reduces the electric field at the tip of the emitter 15
Since 3 is separated from the emitter 15, the influence of the electric field from the focusing electrode 13 on the tip of the emitter 15 can be reduced.

FIG. 7 is an electric field analysis result using the difference method showing the relationship between the thickness of the second insulating film 16 and the current emitted from the tip of the emitter 15. The horizontal axis is the ratio of the thickness of the second insulating film 16 to the height of the emitter 15, and the vertical axis is the current emitted from the tip of the emitter 15 standardized with the current value when the focusing electrode 13 is not used as 100%. Is. In the figure, point B is the ratio of the emission currents under the conventional film thickness conditions (emitter height 1 μm, second insulating film thickness 1 μm) using the focusing electrode 13, and indicates the thickness of the second insulating film 16. It can be seen that by increasing the thickness, the emission current from the tip of the emitter 15 increases. For example, it can be seen that when the ratio of the thickness of the second insulating film 16 to the height of the emitter 15 is 3 or more, the emission current, which was 10% or less in the past, can be secured to 30% or more. Therefore, it is possible to provide an electron source capable of generating an electron beam with a high current density even when the electron beam is focused by reducing the potential applied to the focusing electrode as in the first embodiment.

On the other hand, when the second insulating film is thickened, the pitch p between the emitters in FIG. 6 is widened, and the number of emitters per unit area when forming a plurality of emitters to be electron sources is reduced. Therefore, when a plurality of emitters are formed and used as an electron source, the total emission current from all emitters is determined by the emission current from each emitter and the number of emitters. FIG. 8 shows the relationship of the total emission current with respect to the ratio of the thickness of the second insulating film and the height of the emitter when the total emission current of the emitter group having the focusing action and no reduction in the emission current is 100%. It is a thing. As shown in FIG. 8, if the ratio of the thickness of the second insulating film to the height of the emitter is 2.5 or more in the emitter group, the total current in the emitter group is saturated at about 40%. As described in the first embodiment, if the total current of the emitter group is about 40%, it is possible to compensate the total current up to 100% by optimizing the other parameters. Therefore, the thickness of the second insulating film may be 2.5 μm if the emitter height is 1 μm. The upper limit of the thickness will be about 10 μm, which is ten times higher in consideration of the thickening process.

Further, when the electron source is made thinner and the height of the emitter is lowered, the increasing slope in FIG. 7 becomes gentle, and also in FIG. 8, the increasing slope becomes gentle. In that case, it is necessary to further increase the thickness of the electrode with respect to the height of the emitter, and in that case, there is a possibility that the thickness is 10 times or more.
In addition, it is not necessary to consider that the emitter height is larger than 1 μm by one digit or more because it is difficult to reduce the thickness of the electron source and the process is difficult. Emitter height is 1 μm
When it becomes larger, the inclination becomes steeper in both FIGS. 7 and 8, and the ratio of the thickness of the second insulating film to the height of the emitter may be smaller than 2.5.

As in the first embodiment, one electron source may constitute one electron source.

Embodiment 3 A third embodiment of the present invention will be described with reference to the drawings. FIG. 9 is a cross-sectional view showing a main part of the electron source according to the third embodiment, and FIG. 10 is a schematic plan view showing a connection state of electrodes. In the figure, reference numeral 12a is a second lead electrode, which is provided between the first lead electrode 12 and the focusing electrode 13 via a second insulating film 16 and a third insulating film 36, respectively. Further, as shown in FIG. 10, the second extraction electrode 12a is located at one location,
A linear wiring 21a connected to a bonding terminal (electrode terminal) 19a forming a terminal portion for supplying power to 2a extends and is exposed in the upper space. Furthermore, the bonding terminal 1
A conductor 24a for supplying a voltage is connected to 9a.

Next, the operation of the electron source in the thus constructed device will be described. First extraction electrode 1
2 to the cathode electrode 11, for example, +60 to +110
A voltage of V is applied. Further, a voltage of 0 to +20 V, for example, is applied to the focusing electrode 13 with respect to the cathode electrode 11. A potential higher than that of the focusing electrode 13 and lower than that of the first extracting electrode 12, for example, +50 V is applied to the second extracting electrode 12a. Then, the electric field strength near the tip of the emitter 15 is such that the second extraction electrode 12a is
3 plays a role of shielding against the influence of the electric field strength of 3, and a sufficient electric field strength can be obtained. Therefore, similarly to the first and second embodiments, it is possible to provide an electron source that can generate an electron beam with a high current density even when the electron beam is focused by reducing the potential applied to the focusing electrode. In this way, since it is not necessary to make the thickness of each layer extremely thick as compared with the conventional one by using a multi-layer structure as in the first and second embodiments, a problem caused by thickening each film, for example, , It becomes possible to ignore the internal stress in the film.

Embodiment 4 A fourth embodiment of the present invention will be described with reference to the drawings. FIG. 11 is a cross-sectional view showing a main part of the electron source according to the fourth embodiment, and FIG. 12 is a schematic plan view showing a connection state of electrodes. In the third embodiment, the potential applied to the second extraction electrode 12a is set to an intermediate potential between the potentials applied to the first extraction electrode 12 and the focusing electrode 13, but in the fourth embodiment, an external circuit is used. The first lead electrode 12 and the second lead electrode 12a are electrically connected to each other to have the same potential. In FIG. 11, the external circuit forming the conducting portion is formed on the same substrate as each electrode, and 38 is an electrode terminal provided in the bonding terminal portion, which includes the first lead electrode 12 and the second lead electrode. 12a to the opening 1
It is electrically short-circuited outside 0.

With respect to the electron source configured as described above, the first
The extraction electrode 12 and the second extraction electrode 12a of, for example, +60 to +110 V with respect to the cathode electrode 11.
The voltage of 0 to + 20V is applied to the focusing electrode 13 with respect to the cathode electrode 11 to the focusing electrode 13.

With such a structure, as in the third embodiment, the thickness of each layer can be made thin, so that problems caused by thickening each film, such as internal stress and peeling in the film, are ignored. can do. Further, as shown in FIG. 12, since the electrode terminals 38 of the first extraction electrode 12 and the second extraction electrode 12a are common, the number of electrode terminals can be reduced and the influence of the asymmetric electric field from the electrode terminals or the like can be reduced. Can be made smaller. Furthermore, the number of power supplies is small,
A high-performance electron source can be obtained with a simple structure.

Although the first lead electrode and the second lead electrode are short-circuited in the external circuit provided on the same substrate as each electrode in FIG. 11, the external circuit (substrate Outside) may be short-circuited. In this way, the number of electrode terminals does not decrease, but the manufacturing becomes easier. Also,
The wiring 21 connects the first extraction electrode and the second extraction electrode,
You may make a short circuit directly inside the electrode without passing through 21a.
By doing so, the number of wirings 21 and 21a becomes one, and the configuration becomes simpler.

FIG. 13 shows the relationship between the ratio of the film thickness of the extraction electrode to the height of the emitter and the electric field strength at the tip of the emitter. And the second extraction electrode, and the second
Is provided in the middle of the second insulating film having the conventional thickness (the insulating film is separated into the second insulating film 16 and the third insulating film 36 in FIG. 11) to form the first and second extracting electrodes. Three-stage electrode (two-stage extraction electrode and one-stage focusing electrode) adopting the second extraction electrode of the present embodiment when the same potential is applied
Shows the effect of. It was confirmed that when the ratio of the film thickness of the extraction electrode to the height of the emitter was 2, the same effect as in the first embodiment was obtained. Here, in the three-stage electrode, the thickness of the extraction electrode is the sum of the thicknesses of the first and second extraction electrodes and the second insulating film, and thus the thickness of each layer is smaller than that of the first embodiment. can do. Further, if the potentials applied to the first and second extraction electrodes are adjusted, it is not necessary to increase the thickness of the first and second extraction electrodes.

Embodiment 5. The fifth embodiment of the present invention will be described with reference to the drawings. FIG. 14 is a sectional view showing the main part of the electron source according to the fifth embodiment. In the figure, the second extraction electrode 12a is referred to as the first extraction electrode 12 and the focusing electrode 1
3 is provided via insulating films 16 and 36, respectively, and an electrode surface 37 for connecting the first extraction electrode 12 and the second extraction electrode 12a is provided on the inner wall of the opening 10.

With this structure, the first circuit
It is not necessary to connect the extraction electrode 12 and the second extraction electrode 12a, and the structure is simplified. Further, the influence of the potential applied to the extraction electrode is easily given to the electric field formed inside the opening, the decrease of the electric field at the tip of the cathode electrode can be prevented, and an electron beam having a high current density and excellent focusing characteristics can be obtained.

Embodiment 6 FIG. A sixth embodiment of the present invention will be described with reference to the drawings. The structure of the electron source according to the sixth embodiment is similar to that of the third embodiment shown in FIGS. 9 and 10, but the voltage applied to each electrode is different.

The operation of this electron source will be described. FIG.
At the first extraction electrode 12, the cathode electrode 1
For example, a voltage of +60 to +110 V is applied to 1. A voltage higher than that of the first extraction electrode 12 is applied to the second extraction electrode 12a, for example, +8 with respect to the cathode electrode 11.
0- + 160V is applied. Further, for example, +20 to +80 V is applied to the focusing electrode 13 with respect to the cathode electrode 11. At this time, the influence of the electric field from the focusing electrode 13 that reduces the electric field at the tip of the emitter 15 is influenced by the second extraction electrode 1.
The focusing electrode 13 itself can be shielded by the voltage applied to the emitter 2a, so that the focusing electrode 13 itself is separated from the emitter 15.
5 The influence of the electric field from the focusing electrode 13 on the tip can be reduced. An electric field necessary for electron emission is generated in the emitter 15 by the voltage applied to the first extraction electrode 12, so that electrons are emitted. By using this method, the emitter 15
The electrons emitted from the tip of the are decelerated by the electric field formed by the focusing electrode 13, focused, and emitted toward the anode provided outside the electron source.

As described above, by making the voltage applied to the second lead electrode 12a higher than the voltage applied to the first lead electrode 12, the second insulating film 16 is made thinner than that of the third to fifth embodiments. Even if the entire film thickness is reduced and the distance between the first extraction electrode and the second extraction electrode is reduced, the same result as that in which the first extraction electrode and the second extraction electrode have the same potential The effect of focusing the electron beam is obtained. Further, since the voltage applied to the focusing electrode is higher than that of the cathode electrode, the influence of the decrease in the electric field at the tip of the cathode electrode is reduced.

Embodiment 7. The seventh embodiment of the present invention will be described with reference to the drawings. FIG. 15 is a cross-sectional view showing a main part of an electron source according to the seventh embodiment, and FIG. 16 is a schematic plan view showing a connection state of electrodes. In the figure, the second extraction electrode 1 is different from the three-stage electrode type of the third to sixth embodiments.
2a and the focusing electrode 13 are formed in the same plane, and the third insulating film is eliminated to form a two-layer electrode type.

Next, the operation of the electron source in the thus constructed device will be described. First extraction electrode 1
2 to the cathode electrode 11, for example, +60 to +110
A voltage of V is applied. Further, a voltage of 0 to +20 V, for example, is applied to the focusing electrode 13 with respect to the cathode electrode 11. A potential higher than that of the focusing electrode 13 and lower than that of the first extracting electrode 12, for example, +50 V is applied to the second extracting electrode 12a. Then, the electric field strength near the tip of the emitter 15 is such that the second extraction electrode 12a is
3 plays a role of shielding against the influence of the electric field strength of 3, and a sufficient electric field strength can be obtained. Therefore, it is possible to provide an electron source capable of generating an electron beam with a high current density even when the electron beam is focused by reducing the potential applied to the focusing electrode as in the third embodiment.

With such a structure, the total film thickness can be made thinner and the thickness of each layer can be made thinner than in the above-described respective embodiments, so that the total film thickness can be increased. Problems caused by making each film thick, such as internal stress and peeling in the film, can be ignored, and manufacturing becomes easy. In addition, the second extraction electrode 12a and the focusing electrode 13
Since the above shapes are produced at the same time, the number of manufacturing steps can be reduced as compared with the conventional three-stage electrode type. Due to the above two points, manufacturing cost reduction, yield improvement, etc. can be realized.

Although the voltage applied to the second lead electrode 12a is lower than the voltage applied to the first lead electrode 12 in the present embodiment, the first lead electrode is formed by an external circuit as in the fourth embodiment. 12 and the second extraction electrode 12a are short-circuited. For example, the first extraction electrode 12 and the second extraction electrode 12a are supplied with a voltage of +60 to +110 V with respect to the cathode electrode 11, and the focusing electrode 13 is supplied with respect to the cathode electrode 11. By applying a voltage of 0 to +20 V, a high-performance electron source with a simple structure can be obtained.

Further, in FIG. 15, similarly to the sixth embodiment, for example, a voltage of +60 to +110 V with respect to the cathode electrode 11 is applied to the first extraction electrode 12, and a cathode electrode 11 is applied to the second extraction electrode 12a. For + 80 ~
The first extraction electrode 1 is applied with + 160V and +20 to + 80V to the focusing electrode 13 with respect to the cathode electrode 11.
By making the voltage applied to the second lead electrode 12a higher than the voltage applied to the second electrode 2, the second insulating film 16 can be made thinner and the overall film thickness can be made thinner.

Embodiment 8 FIG. An embodiment of the present invention will be described with reference to the drawings. FIG. 17 is a cross-sectional view showing the main part of the electron source according to the eighth embodiment, and FIG. 18 is a schematic plan view showing the connected state of the electrodes. In the figure, the difference from the seventh embodiment lies in the way of the linear wiring 21a connecting the second lead electrode 12a and the bonding terminal 19a. That is, the wiring pattern as shown in FIG.
The wiring 21a is not formed on the same plane as the extraction electrode 12a and the focusing electrode 13 of the above, but as shown in FIG. 17, the second extraction electrode 12a and the focusing electrode 13 are provided on another plane through the insulating layer 35. The wiring 21a is formed.

By doing so, the focusing electrode 13
Is not separated by the wiring 21a, the symmetry of the electric field by the focusing electrode 13 is maintained, and an electron source that emits an electron beam with excellent focusing characteristics can be obtained.

Ninth Embodiment The ninth embodiment of the present invention will be described with reference to the drawings. FIG. 19 is a cross-sectional view showing a main part of an electron source according to the ninth embodiment, and FIG. 20 is a schematic plan view showing a connection state of electrodes. The seventh embodiment is the seventh embodiment.
Similar to the second embodiment, it is a two-layer electrode type, but is different from the seventh embodiment shown in FIG. 15 in that the first extraction electrode 12 and the second extraction electrode 12a are electrically connected to each other by the electrode surface 37 inside the opening 10. To connect them to the same potential.

With this structure, the reduction of the electric field at the tip of the electron emitting portion due to the potential applied to the focusing electrode 13 can be easily shielded by the potentials of the first extraction electrode 12 and the second extraction electrode 12a. it can. Furthermore, in the external circuit, the first extraction electrode 12 and the second extraction electrode 12
It is not necessary to connect a, the structure is simplified, the symmetry of the electric field by the focusing electrode 13 is maintained, and an electron source that emits an electron beam with excellent focusing characteristics can be obtained.

Embodiment 10 FIG. Embodiment 1 of the present invention
0 will be described with reference to the drawings. FIG. 21 shows a process of manufacturing an electron source by increasing the thickness of each layer as compared with the prior art as in the first and second embodiments. In the figure, the state of the manufacturing process is shown when the thickness of the circular mask 29 for forming the opening 10 is set to a predetermined thickness when the extraction electrode 12 and the insulating films 16 and 17 are formed by the vapor deposition method. There is.

In FIG. 10A, a circular mask material (eg, SiO 2) 30 having a thickness thicker than the conventional one and having a predetermined thickness is formed on an emitter material (eg, Si) 28 on a substrate 14 made of, for example, a glass material. To film. Next, in (b), the circular mask material 30 for forming the emitter 15 is processed into a circular shape to form a circular mask 29. In (c), the emitter material 28 is formed into a desired shape by using the circular mask 29.
Process to 5. In (d), the first insulating film (eg, SiO2) 17 and the extraction electrode (eg, metal such as Nb, Au, Pt, etc.) are simultaneously formed on the circular mask 29 and the portion of the substrate 14 where the emitter 15 is not formed. Good connection with terminals) 12, second insulating film (eg Si)
O2) 16 and focusing electrode (for example, metal such as Nb, Au, Pt, etc., if Au, good connection with external terminal) 13
Are sequentially formed by a vapor deposition method. Circular mask 2 at this time
The protection of 9 prevents the insulator 15 and the electrode material from adhering to the emitter 15. In (e), the circular mask 29 and the unnecessary deposit 31 on the circular mask are removed by etching (for example, using a hydrofluoric acid solution).

Next, a method of designing the thickness of the circular mask will be described. FIG. 22 shows the difference in the formation of the electron source due to the difference in the thickness of the circular mask. In the figure,
(A) shows a state when the film is formed without optimizing the thickness of the circular mask, and (b) shows a state when the film is formed with the circular mask having an appropriate thickness. In the figure, d
e is the height of the emitter, dm is the thickness of the mask, and d is FIG.
When the film is formed in (d), the thickness of the film (any type) being formed from the substrate 14, ro and ri are the diameter of the opening 10 at the height of d and the vapor deposition on the mask 29, respectively. The diameter of the object, r is the diameter of the opening on the substrate. During the film formation, the film on the substrate 14 is formed so that the opening is expanded, and the film on the circular mask 29 is formed so as to be expanded from the diameter of the mask. At this time, the spread of the film on the circular mask 29 from the diameter of the mask is larger than that of the film on the substrate 14. Therefore, unless the circular mask is made sufficiently thick, as shown in FIG. Before the film was completed, the opening was blocked, and in step (e) of FIG. 21, it was difficult to remove the unwanted deposits, and the electron source could not be produced. Therefore, the thickness of the circular mask may be made sufficiently thick as shown in FIG.

Next, a specific method of setting the thickness of the circular mask will be described. FIG. 23 is a graph showing the relationship between the diameter ro of the opening 10 and the diameter ri of the deposit on the mask 29 at the height d from the substrate. The conventional emitter height is 1 μm, the mask dm1 is 0.3 μm, and the opening diameter on the substrate is 1.8 μm, the intersection of ro and ri is about 3.2.
μm. The first insulating film 17 is about 1 μm, the extraction electrode 12 is 0.3 μm, the second insulating film 16 is about 1 μm, the focusing electrode 13 is 0.3 μm, and the total film thickness is 2.6 μm, so the opening is closed. It is possible to manufacture an electron source without any trouble. On the other hand, when the insulating film is designed as in the second embodiment,
For example, if the second insulating film 16 has a thickness of 3 μm, the total film thickness will be 4.6 μm. If you do not thicken the circular mask,
An electron source cannot be manufactured. Therefore, from FIG. 23, d is 4.
D is ri so that ro and ri have an intersection at 6 μm or more
Translate in the direction. At that time, dm2 is the design mask thickness. In the present embodiment, it can be seen that if the thickness of the mask is 1 μm or more, the electron source can be manufactured without closing the opening.

In the first embodiment, the extraction electrode is 3 μm.
When the thickness is m, the total film thickness is 5.3 μm. At this time, when the graph is extrapolated, the thickness of the circular mask is 1.4 μm.
It is understood that the above is necessary.

Although the inclination of this graph is slightly different depending on the type of vapor deposition apparatus and the like, if the relationship between ro and ri is obtained in advance, the optimum circular mask thickness will be the same even if different apparatuses are used. Can be designed.

The substrate 1 is used in the first to tenth embodiments.
Although the emitter 15 is formed on the substrate 4, it may have a structure in which one Si substrate is used and is processed to integrate the emitter and the substrate.

Embodiment 11 FIG. Embodiment 1 of the present invention
1 will be described with reference to the drawings. FIG. 24 shows, for example, the first embodiment.
FIG. 33 is a cross-sectional view showing an electron source manufactured by the manufacturing method according to 0 and the eleventh embodiment. In the electron source (FIG. 24A) formed as in the tenth embodiment, since the film thickness of the extraction electrode 12 is thicker than the film thickness of the conventional extraction electrode, the film wraparound and etching during film formation are performed. Is likely to be stepped due to the influence of, for example, the corners of this step are sharpened, abnormal discharge occurs between the emitter 15 and the extraction electrode 12, and an initial failure occurs due to a short circuit between the electrodes. There was an occasion. In order to prevent this in the present embodiment, in addition to the manufacturing method of the tenth embodiment,
Furthermore, a wet etching process is performed.

For example, the extraction electrode 12 and the focusing electrode 1
3, the substrate 14, the emitter 15, the first insulating film 17, and the second insulating film 16 are Au, Nb, Si, Si and Si, respectively.
It is made of O ₂ and SiO ₂ . After formation, for example, only Au of the extraction electrode 12 is slightly wet-etched with aqua regia so that the corner 40 of the extraction electrode 12 in the opening becomes a flat surface 41 with respect to the emitter 15 and the sharp portion is eliminated. The shape of the extraction electrode is rounded so as to have a shape as shown in FIG.

As described above, when a voltage is applied to the extraction electrode 12 in order to emit electrons from the emitter 15 by eliminating the sharpness and forming a rounded shape, an abnormality occurs between the emitter 15 and the extraction electrode 12. Discharge is less likely to occur. In addition, there is a case where an Au particle is present between the extraction electrode and the cathode electrode due to wraparound during film formation, and an initial defect may occur due to a short circuit between the electrodes therethrough. Initial defects can be reduced by removing foreign matter,
The yield is improved.

Embodiment 12 FIG. Embodiment 1 of the present invention
2 will be described with reference to the drawings. FIG. 25 shows Embodiments 1 to 1.
FIG. 3 is a cross-sectional configuration diagram of a cathode ray tube using the electron source according to any one of 1. In the figure, an electron beam 53 emitted from an electron source 51 composed of one or a plurality of emitters
Is formed by forming a crossover point 59 in the electron gun 52 which is an electron beam focusing means, is deflected by the deflection magnet 54, and has a phosphor 56 having an aluminum film 57 via a shadow mask 55.
To the desired position of. What constitutes a cathode ray tube is housed in a vacuum container 58.

As described above, when the electron source according to any one of the first to eleventh embodiments is used for the cathode ray tube, the electron beam emitted from the electron source has already been focused, so that a sufficiently focused electron beam can be obtained. Therefore, the resolution as a cathode ray tube is improved.

Embodiment 13 FIG. Another embodiment of the present invention will be described with reference to the drawings. FIG. 26 shows Embodiments 1 to 1.
FIG. 3 is a cross-sectional configuration diagram of a cathode ray tube using the electron source according to any one of 1. In the figure, the electron source 51 is three electron sources 5.
The electron beams emitted from the respective electron sources, which are separated into 1R, 51G, and 51B, are crossed over at the crossover points 59 (59R and 59R, respectively) in the electron gun 52 which is a means for focusing the electron beams.
G, 59B) and is deflected by the deflection magnet 54 and has the aluminum film 57 via the shadow mask 55.
6 are led to the red phosphor portion, the green phosphor portion, and the blue phosphor portion, respectively. The device is also housed in a vacuum container.

As described above, when the electron source according to any one of the first to eleventh embodiments is used for the cathode ray tube, the electron beam emitted from the electron source has already been focused, so that a sufficiently focused electron beam can be obtained. Therefore, the resolution as a cathode ray tube is improved, and in this embodiment, the quality as a color image is also improved, and it is possible to provide a cathode ray tube with high performance.

The crossover points in the electron guns of the twelfth and thirteenth embodiments may not be formed as long as sufficient focusing can be achieved.

[0079]

As described above, according to the present invention, the means for blocking the influence of the electric field formed by the potential applied to the focusing electrode on the electron emitting portion of the cathode electrode is provided. In other words, it is possible to provide an electron source that can prevent a decrease in the electric field at the tip of the cathode electrode, can easily control electron emission at a predetermined extraction potential, and have a high current density and an electron beam with excellent focusing characteristics. .

Further, in the electron source, the means for blocking the influence of the electric field formed by the potential applied to the focusing electrode on the electron emitting portion of the cathode electrode is provided with the focusing electrode and the cathode electrode having a predetermined amount or more. Since it is a means for setting the distance, it is possible to prevent the decrease of the electric field at the electron emitting portion, that is, the tip of the cathode electrode, simply by setting a sufficient distance so as not to be affected by the electric field formed by the potential applied to the focusing electrode. It is possible to provide an electron source that can easily control electron emission at a predetermined extraction potential and emits an electron beam having a high current density and excellent focusing characteristics.

In the electron source, since the ratio of the thickness of the extraction electrode to the height of the substantially conical electron emission portion of the cathode electrode is 0.5 or more, the extraction electrode is thicker than the conventional one and the focusing electrode and the electron The distance to the discharge part can be secured,
Moreover, since the thickness of the extraction electrode is sufficiently thick, it is possible to prevent the electric field at the electron emission portion, that is, the tip of the cathode electrode from decreasing, and it is easy to apply the potential of the extraction electrode to the electron emission portion, and the electron beam has a high current density and excellent focusing characteristics It is possible to provide an electron source that emits.

Further, in the electron source, since the ratio of the thickness of the extraction electrode to the height of the substantially conical electron emission portion of the cathode electrode is 1 or more, the extraction electrode is thicker than in the conventional case, and the focusing electrode and the electron emission portion are larger. And the extraction electrode is thick enough, it is possible to prevent the electric field at the electron emission portion, that is, the tip of the cathode electrode from decreasing, and it is easy to apply the potential of the extraction electrode to the electron emission portion and the current density is high. An electron source that emits an electron beam having excellent focusing characteristics can be provided. Further, when the emitter group is formed, the total amount of current can be secured at the same level as the emitter group that has the focusing effect and does not reduce the emission current without operating other parameters, and provides a high-performance electron source. You can

Further, in the electron source, since the corner portion of the extraction electrode in the opening is made flat with respect to the electron emission portion, abnormal discharge is unlikely to occur between the extraction electrode and the emitter, and the electron source Is hard to destroy. In addition, it is possible to reduce initial defects due to contact of foreign matter or the like between the extraction electrode and the cathode electrode, and the yield is improved.

Further, in the electron source, since the ratio of the thickness of the second insulating layer to the height of the substantially conical electron-emitting portion of the cathode electrode is 2.5 or more, the extraction electrode is thicker and more focused than before. The distance between the electrode and the electron emission part is secured,
(EN) Provided is an electron source capable of preventing a decrease in an electric field at an electron emission portion, that is, a tip of a cathode electrode, easily controlling electron emission at a predetermined extraction potential, and emitting an electron beam having a high current density and an excellent focusing characteristic. You can

Further, in the electron source, since the second extraction electrode is provided between the focusing electrode and the extraction electrode (first extraction electrode), it is possible to prevent the decrease of the electric field at the electron emission portion, that is, the tip of the cathode electrode. It is possible to provide an electron source that emits an electron beam having a high current density and an excellent focusing characteristic.

Further, in the electron source, since the second extraction electrode is provided on the same plane as the focusing electrode and on the opening side of the focusing electrode, the reduction of the electric field at the electron emitting portion, that is, the tip of the cathode electrode is prevented. It is possible to provide an electron source that emits an electron beam having a high current density and an excellent focusing characteristic.
Further, the total film thickness can be reduced, manufacturing can be facilitated, and manufacturing cost can be reduced and yield can be improved.

In the electron source, since the extraction electrode (first extraction electrode) and the second extraction electrode have the same potential, the focusing electrode and the electron emitting portion are formed in the same manner as when the thick extraction electrode is used. Can be secured, and the effective thickness of the extraction electrode formed by the first extraction electrode and the second extraction electrode is sufficiently thick, so that the reduction of the electric field at the electron emission portion, that is, the tip of the cathode electrode can be prevented. Thus, it is possible to provide an electron source that emits an electron beam having a high current density and an excellent focusing property because the electric potential of the extraction electrode is easily applied to the electron emitting portion. Further, since it is not necessary to increase the thickness of one electrode, the manufacturing process is facilitated and the yield is improved.

In the electron source, since the extraction electrode (first extraction electrode) and the second extraction electrode are connected to each other on the inner surface of the opening, the influence of the potential on the extraction electrode is formed inside the opening. Easily applied to the generated electric field, and it is possible to prevent the decrease of the electric field at the electron emitting portion, that is, the cathode electrode tip,
It is possible to provide an electron source that emits an electron beam having a high current density and an excellent focusing characteristic.

Further, in the electron source, since the extraction electrode (first extraction electrode) and the second extraction electrode are connected outside the opening, an electron beam having a high current density and excellent focusing characteristics is emitted. The source can be easily manufactured.

In the electron source, since the potential applied to the second extraction electrode is set higher than the potential applied to the extraction electrode (first extraction electrode), the overall film thickness is reduced and the first extraction electrode is formed. Even if the distance between the electrode and the second extraction electrode is reduced, the effect of focusing the electron beam can be obtained similarly to the case where the first extraction electrode and the second extraction electrode have the same potential. It is possible to provide various electron sources. In addition, since the film thickness can be reduced, the manufacturing process is facilitated and the yield is improved.

Further, in the cathode ray tube, since any one of the electron sources is mounted, the electron beam source originally has high focusing ability, and the electron beam of high current density can be emitted from the electron source, so that the controllability is high. A cathode ray tube can be constructed,
It is possible to provide a high-performance cathode ray tube.

Further, according to the method of manufacturing an electron source of the present invention, the thickness of the mask material for forming the substantially conical electron-emitting portion on the cathode electrode material is set to be the mask at the opening portion when all layers are formed. Since the layers were sequentially formed using a mask whose occupancy rate of the layers on the material was smaller than the size of the openings, the thickness of each layer was changed and the thickness of all layers increased. However, by using the mask material having a predetermined thickness, it is possible to manufacture an electron source having a good substantially conical electron emitting portion. As a result, it is possible to provide an electron source that emits an electron beam having a high current density and an excellent focusing characteristic, and it is possible to manufacture these electron sources with high accuracy and improve the manufacturing yield.

[Brief description of drawings]

FIG. 1 is a sectional view showing a configuration of a main part of an electron source according to a first embodiment.

FIG. 2 is a schematic plan view showing a wire connection state of electrodes of an electron source according to the first embodiment.

FIG. 3 is a graph of an electric field analysis result showing the relationship between the thickness of the extraction electrode and the emission current.

FIG. 4 is a graph of an electric field analysis result showing the relationship between the thickness of the extraction electrode and the total emission current.

FIG. 5 is a graph showing the relationship between the voltage applied to the focusing electrode and the anode current when the thickness of the extraction electrode is changed.

FIG. 6 is a sectional view showing a configuration of a main part of an electron source according to a second embodiment.

FIG. 7 is a graph of an electric field analysis result showing the relationship between the thickness of the second insulating film and the emission current.

FIG. 8 is a graph of an electric field analysis result showing the relationship between the thickness of the second insulating film and the total emission current.

FIG. 9 is a sectional view showing a configuration of a main part of an electron source according to a third embodiment.

FIG. 10 is a schematic plan view showing a wire connection state of electrodes of an electron source according to a third embodiment.

FIG. 11 is a sectional view showing a configuration of a main part of an electron source according to a fourth embodiment.

FIG. 12 is a schematic plan view showing a wire connection state of electrodes of an electron source according to a fourth embodiment.

FIG. 13: Three-stage electrode structure (with a second extraction electrode)
It is a graph which shows the effect of.

FIG. 14 is a sectional view showing a configuration of a main part of an electron source according to a fifth embodiment.

FIG. 15 is a sectional view showing a configuration of a main part of an electron source according to a seventh embodiment.

FIG. 16 is a schematic plan view showing a wire connection state of electrodes of an electron source according to the seventh embodiment.

FIG. 17 is a sectional view showing a configuration of a main part of an electron source according to an eighth embodiment.

FIG. 18 is a schematic plan view showing a wire connection state of electrodes of an electron source according to the eighth embodiment.

FIG. 19 is a sectional view showing a configuration of a main part of an electron source according to a ninth embodiment.

FIG. 20 is a schematic plan view showing a wire connection state of electrodes of an electron source according to a ninth embodiment.

FIG. 21 is a cross-sectional view showing the manufacturing process of the electron source according to the tenth embodiment.

FIG. 22 is a schematic diagram showing the quality of manufacture of the electron source due to the difference in mask thickness.

FIG. 23 is a graph showing the relationship between the diameter of the deposit on the mask and the inner diameter of the deposit on the substrate for determining the mask thickness.

FIG. 24 is a cross-sectional view showing an electron source manufactured by the method for manufacturing an electron source according to the tenth embodiment and the eleventh embodiment.

FIG. 25 is a cross-sectional configuration diagram of a cathode ray tube equipped with an electron source according to any of Embodiments 1 to 11.

FIG. 26 is a cross-sectional configuration diagram of a cathode ray tube equipped with a plurality of electron sources according to any of Embodiments 1 to 11.

FIG. 27 is a cross-sectional configuration diagram showing a conventional electron source.

FIG. 28 is a cross-sectional view showing a conventional electron source manufacturing process.

FIG. 29 is a cross-sectional configuration diagram showing a conventional cathode ray tube.

FIG. 30 is a graph showing a relationship between a voltage applied to a focusing electrode of a conventional electron source, an anode current, and an electron beam divergence angle.

[Description of Reference Signs] 10 Opening, 11 Cathode Electrode, 12 Extraction Electrode (First Extraction Electrode), 12a Second Extraction Electrode, 13 Focusing Electrode, 14 Substrate, 15 Emitter, 16 Second Insulating Film, 17 First Insulation Membrane, 18
Electrode terminal, 19 electrode terminal, 19a electrode terminal,
20 wirings, 21 wirings, 21a wirings, 22 wirings, 23 electrode terminals, 24 conducting wires, 24a conducting wires,
25 conductors, 26 conductors, 28 emitter material, 2
9 circular mask, 30 circular mask material, 31 unnecessary vapor deposition material, 35 insulating layer, 36 third insulating film, 37
Electrode surface on inner wall of opening, 38 electrode terminals, 51, 51
R, 51G, 51B electron source, 52 electron gun, 53 electron beam, 54 deflection magnet, 55 shadow mask, 5
6 phosphor, 57 aluminum film, 58 vacuum container, 5
9, 59R, 59G, 59B Crossover points, 10
0 electron beam, 101 cathode electrode (substrate), 10
1a oxide film, 102 extraction electrode, 103 focusing electrode, 104 emitter, 105 insulating film, 106
Insulating film, 107 Third insulating film, 108 Accelerating electrode,
109 power supply for extraction electrode, 110 power supply for focusing electrode, 111 power supply for accelerating electrode, 112 mask, 1
13a, 113b photoresist, 121 field emitter cathode, 122 anode electrode,
123 anode electrode, 124 electron lens, 12
5 electron lenses, 126 convergence electrodes, 1
27 crossover point, 128 deflection magnet, 129 shadow mask, 130 aluminum film, 1
31 Phosphor with aluminum back.

Front Page Continuation (72) Inventor Kazutoshi Morikawa 2-3-3 Marunouchi, Chiyoda-ku, Tokyo Sanryo Electric Co., Ltd. (72) Inventor Soichiro Okuda 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Sanryo Denki Co., Ltd. (72) Inventor, Tsuyoshi Harada, 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Sanryo Electric Co., Ltd.

Claims (14)

[Claims] 1. An extraction electrode for extracting electrons from a first insulating layer and a cathode electrode portion in order so as to form an opening on a cathode electrode having a substantially conical electron emission portion and surround the electron emission portion. A second insulating layer, a focusing electrode for focusing the extracted electrons is arranged, and a means for shielding the influence of the electric field formed by the potential applied to the focusing electrode on the electron emitting portion of the cathode electrode is provided. Equipped with an electron source. 2. The means for blocking the influence of the electric field formed by the potential applied to the focusing electrode on the electron emitting portion of the cathode electrode is a means for keeping the distance between the focusing electrode and the cathode electrode by a predetermined distance or more. The electron source according to claim 1, wherein there is an electron source. 3. The means for keeping the distance between the focusing electrode and the cathode electrode by a predetermined distance or more is such that the ratio of the thickness of the extraction electrode to the height of the substantially conical electron emitting portion of the cathode electrode is 0.5 or more. The electron source according to claim 2, wherein the electron source is an extraction electrode of 4. A means for keeping the distance between the focusing electrode and the cathode electrode by a predetermined distance or more is such that the ratio of the thickness of the extraction electrode to the height of the substantially conical electron-emitting portion of the cathode electrode is 1 or more. The electron source according to claim 3, wherein the electron source is an electrode. 5. The corner portion of the extraction electrode in the opening is
The electron source according to claim 3 or 4, wherein the electron source has a flat surface. 6. The means for keeping the distance between the focusing electrode and the cathode electrode by a predetermined distance or more is such that the ratio of the thickness of the second insulating layer to the height of the substantially conical electron emitting portion of the cathode electrode is 2.5 or more. 3. The electron source according to claim 2, wherein the electron source is a second insulating layer having a thickness of. 7. A means for shielding the influence of the electric field formed by the potential applied to the focusing electrode on the electron emission portion of the cathode electrode is provided between the focusing electrode and the extraction electrode (first extraction electrode). The electron source according to claim 1, wherein the electron source is provided. 8. A means for shielding an influence of an electric field formed by a potential applied to the focusing electrode on an electron emitting portion of the cathode electrode on the same plane as the focusing electrode and on the opening side of the focusing electrode. The electron source according to claim 1, further comprising a second extraction electrode. 9. The electron source according to claim 7, wherein the extraction electrode (first extraction electrode) and the second extraction electrode have the same potential. 10. An extraction electrode (first extraction electrode)
10. The electron source according to claim 9, wherein the second lead electrode and the second lead electrode are connected to each other at the inner surface of the opening. 11. An extraction electrode (first extraction electrode)
10. The electron source according to claim 9, wherein the second extraction electrode and the second extraction electrode are connected to each other outside the opening. 12. The electron source according to claim 7, wherein the potential applied to the second extraction electrode is higher than the potential applied to the extraction electrode (first extraction electrode). 13. An electron source according to any one of claims 1 to 12, a means for focusing an electron beam emitted from the electron source, and a phosphor for focusing the focused electron beam in a vacuum container. And a means for deflecting and guiding the same to a predetermined position. 14. A drawer for drawing out electrons from the first insulating layer and the cathode electrode section so that an opening for arranging the electron emitting section is formed on the cathode electrode having a substantially conical electron emitting section. In a method of manufacturing an electron source in which an electrode, a second insulating layer, and a focusing electrode for focusing the extracted electrons are sequentially stacked to form a substantially conical electron-emitting portion on a cathode electrode material. In the first step, the thickness of the mask material is determined so that the occupancy rate of the layer on the mask material in the opening is smaller than the size of the opening when forming all layers. Is determined, and a second step of forming a substantially conical electron-emitting portion on the cathode electrode using a mask formed on the cathode electrode, and a first insulating layer having a predetermined thickness on the cathode substrate in order. A third step of forming the edge layer, the extraction electrode, the second insulating layer, and the focusing electrode; and a fourth step of removing the mask formed on the cathode electrode and the layer on the mask. A method of manufacturing a characteristic electron source.