JPH0936687A - Formation of electrode of surface acoustic element - Google Patents
Formation of electrode of surface acoustic elementInfo
- Publication number
- JPH0936687A JPH0936687A JP18535395A JP18535395A JPH0936687A JP H0936687 A JPH0936687 A JP H0936687A JP 18535395 A JP18535395 A JP 18535395A JP 18535395 A JP18535395 A JP 18535395A JP H0936687 A JPH0936687 A JP H0936687A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- pattern
- mask
- thin film
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000010409 thin film Substances 0.000 claims abstract description 30
- 239000010408 film Substances 0.000 claims abstract description 24
- 239000007772 electrode material Substances 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000010897 surface acoustic wave method Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 8
- 230000005616 pyroelectricity Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Manufacturing Of Printed Circuit Boards (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、圧電材料を用いて
弾性表面波素子を製造するための電極形成方法に関し、
特に複層構造の電極の形成に適用される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode forming method for manufacturing a surface acoustic wave device using a piezoelectric material,
Particularly, it is applied to the formation of an electrode having a multilayer structure.
【０００２】弾性表面波素子（ＳＡＷデバイス）は、通
信機器、ＴＶ、ＶＴＲなどの高周波回路の小型化に好適
である。近年、携帯電話に代表される移動通信機器の市
場が膨らみ、ＳＡＷデバイスの需要が急増している。こ
のような状況の中で、さらに高性能のＳＡＷデバイスの
開発が進められており、耐電力性に優れた電極構造が発
表されている（特開平７−１２２９６１号）。Surface acoustic wave devices (SAW devices) are suitable for downsizing of high frequency circuits such as communication equipment, TVs and VTRs. In recent years, the market for mobile communication devices represented by mobile phones has expanded, and the demand for SAW devices has increased rapidly. Under such circumstances, further high performance SAW devices are being developed, and an electrode structure with excellent power resistance has been announced (Japanese Patent Laid-Open No. 7-122961).
【０００３】[0003]
【従来の技術】ＳＡＷデバイスは、圧電体（圧電材料基
板又はガラス基板などの上に設けた圧電性薄膜）の表面
を伝播する弾性波を利用したデバイスである。2. Description of the Related Art A SAW device is a device that utilizes elastic waves propagating on the surface of a piezoelectric body (piezoelectric thin film provided on a piezoelectric material substrate or a glass substrate).
【０００４】ＳＡＷデバイスには、機械的弾性波信号と
電気的信号との変換手段として、圧電体の表面に薄膜導
体からなる櫛形電極が設けられている。櫛形電極は、す
だれ状電極、交叉指電極、又はＩＤＴなどとも呼称され
ている。The SAW device is provided with a comb-shaped electrode made of a thin film conductor on the surface of the piezoelectric body as a means for converting a mechanical elastic wave signal and an electric signal. The comb-shaped electrode is also called a comb-shaped electrode, an interdigitated electrode, an IDT, or the like.
【０００５】デバイス特性は櫛形電極の寸法条件に依存
する。例えば、Ｙカット−Ｘ伝播のタンタル酸リチウム
結晶を用いた２ＧＨｚ帯域のバンドパスフィルタでは、
櫛形の電極指の配列ピッチは約２μｍであり、電極指の
幅は約０．５μｍである。Device characteristics depend on the dimensional conditions of the comb electrodes. For example, in a 2 GHz band pass filter using a Y-cut-X propagation lithium tantalate crystal,
The arrangement pitch of the comb-shaped electrode fingers is about 2 μm, and the width of the electrode fingers is about 0.5 μm.
【０００６】ＳＡＷデバイスの製造において、櫛形電極
の形成にはフォトリソグラフィが用いられ、通常は多数
個のデバイスについて一括に、櫛形電極を含む導体のパ
ターニングが行われる。In the manufacture of SAW devices, photolithography is used to form the comb-shaped electrodes, and usually, patterning of conductors including the comb-shaped electrodes is performed collectively for a large number of devices.
【０００７】パターニングには周知のとおり２つの方法
がある。１つは、導体層の上にレジストパターン（エッ
チングマスク）を設け、導体層を部分的にエッチングす
る方法である。他の１つは、レジストパターン（リフト
オフマスク）を設けた後に導電層を形成し、レジストパ
ターンとともに不要の導電層を取り除く方法である。As is well known, there are two methods for patterning. One is a method of providing a resist pattern (etching mask) on the conductor layer and partially etching the conductor layer. The other one is a method of forming a conductive layer after providing a resist pattern (lift-off mask) and removing the unnecessary conductive layer together with the resist pattern.
【０００８】従来は、電極材料及び設備の事情に応じ
て、これら２つの方法の内の一方のみを用いて櫛形電極
が形成されていた。Conventionally, a comb-shaped electrode has been formed by using only one of these two methods depending on the circumstances of the electrode material and equipment.
【０００９】[0009]
【発明が解決しようとする課題】ところで、エッチング
によって櫛形電極を形成する場合には、電極パターンが
微細であることから、異方性エッチング手法を用いる必
要がある。また圧電体の受けるダメージを考慮すると、
イオンミリングなどの物理的な手法は適当ではなく、反
応性イオンエッチング（reative ion etching ：ＲＩ
Ｅ）が好適である。By the way, when a comb-shaped electrode is formed by etching, it is necessary to use an anisotropic etching method because the electrode pattern is fine. Also, considering the damage that the piezoelectric body receives,
Physical methods such as ion milling are not suitable, and reactive ion etching (RI) is used.
E) is preferred.
【００１０】しかし、ＲＩＥでは、エッチングの対象が
限定され、電極材料の選択の自由度が小さい。例えば、
Ｃｕ及びＣｕ合金は耐電力性の改善に有用であるにも係
わらず、適当なエッチングガスがないためにこれらの材
料を用いることができない。However, in RIE, the etching target is limited, and the degree of freedom in selecting the electrode material is small. For example,
Although Cu and Cu alloys are useful for improving power resistance, these materials cannot be used due to the lack of a suitable etching gas.
【００１１】一方、リフトオフによって櫛形電極を形成
する場合には、圧電体の表面が導電膜で被覆されていな
い状態でレジストパターンを形成するので、レジスト材
のベーク処理の段階で圧電体の昇温に起因する焦電が生
じ易い。焦電は、レジスト材を変質させ、電極のパター
ン欠陥を招く。On the other hand, when the comb-shaped electrode is formed by lift-off, since the resist pattern is formed in a state where the surface of the piezoelectric body is not covered with the conductive film, the temperature of the piezoelectric body is raised during the baking process of the resist material. Pyroelectricity due to Pyroelectricity deteriorates the resist material and causes pattern defects of the electrodes.
【００１２】つまり、従来では、ＲＩＥが適さない電極
材料を用いる場合には、物理的なエッチング、又はリフ
トオフによらなければならず、衝撃による圧電体の劣化
又は焦電による歩留りの低下が避けられないという問題
があった。That is, conventionally, when an electrode material that is not suitable for RIE is used, physical etching or lift-off must be used, and deterioration of the piezoelectric body due to impact or reduction in yield due to pyroelectricity can be avoided. There was a problem of not having.
【００１３】本発明は、この問題に鑑みてなされたもの
で、電極材料の選択の制約を緩和して電極の特性改善を
容易にすることを目的としている。The present invention has been made in view of this problem, and an object thereof is to alleviate restrictions on selection of electrode materials and facilitate improvement of electrode characteristics.
【００１４】[0014]
【課題を解決するための手段】請求項１の発明の電極形
成方法は、弾性表面波素子の製造に際して、圧電体の表
面に第１の電極材料からなる導電膜を成膜し、その後に
導電膜の上に電極パターンに対するネガパターンのリフ
トオフマスクを設け、導電膜の露出面を第２の電極材料
の薄膜で被覆し、リフトオフマスクを除去し、残存する
第２の電極材料の薄膜と重なるように電極パターンに相
当するポジパターンのエッチングマスクを設け、異方性
エッチング法によって導電膜を電極パターンにパターニ
ングする方法である。According to a first aspect of the present invention, there is provided an electrode forming method, wherein a conductive film made of a first electrode material is formed on a surface of a piezoelectric body at the time of manufacturing a surface acoustic wave device, and then a conductive film is formed. A lift-off mask having a negative pattern for the electrode pattern is provided on the film, the exposed surface of the conductive film is covered with a thin film of the second electrode material, and the lift-off mask is removed so that it overlaps with the remaining thin film of the second electrode material. Is provided with an etching mask having a positive pattern corresponding to the electrode pattern, and the conductive film is patterned into the electrode pattern by the anisotropic etching method.
【００１５】圧電体の表面が第１の電極材料の導電膜で
被覆され、この導電膜によって電極形成領域内での焦電
が防止される。第２の電極材料の薄膜は、いわゆるリフ
トオフによってパターニングされる。したがって、パタ
ーニングの可否の上での第２の電極材料の制約は無い。
つまり、任意の材料を用いることができる。The surface of the piezoelectric body is covered with a conductive film of the first electrode material, and this conductive film prevents pyroelectricity in the electrode formation region. The thin film of the second electrode material is patterned by so-called lift-off. Therefore, there is no restriction on the second electrode material in terms of whether or not patterning is possible.
That is, any material can be used.
【００１６】なお、リフトオフマスクを設ける以前に、
導電膜の上に第１の電極材料以外の材料を積層してもよ
い。また、リフトオフの以前に、第２の電極材料の薄膜
の上に第２の電極材料以外の材料を積層してもよい。Before providing the lift-off mask,
A material other than the first electrode material may be laminated on the conductive film. Before lift-off, a material other than the second electrode material may be laminated on the thin film of the second electrode material.
【００１７】リフトオフの後の異方性エッチングにより
導電膜の不要部分が取り除かれ、第１及び第２の電極材
料からなる所定のパターンの電極が形成される。Anisotropic etching after lift-off removes unnecessary portions of the conductive film to form electrodes having a predetermined pattern made of the first and second electrode materials.
【００１８】[0018]
【発明の実施の形態】図１はＳＡＷフィルタ１の導体パ
ターンの一例を示す平面図、図２はＳＡＷフィルタ１の
共振器の電極構造を示す平面図である。1 is a plan view showing an example of a conductor pattern of a SAW filter 1, and FIG. 2 is a plan view showing an electrode structure of a resonator of the SAW filter 1.
【００１９】図１に例示したＳＡＷフィルタ１は、回路
構成上は３組のＬ形フィルタを連設した梯子形フィルタ
であり、６つの共振器ＲＥ１〜６を有している。直列ア
ームの共振器ＲＥ１〜３の共振周波数と並列アームの共
振器ＲＥ４〜６の反共振周波数とがほぼ一致する場合に
は、ＳＡＷフィルタ１は、その共振周波数を中心周波数
とするバンドパスフィルタとなる。The SAW filter 1 illustrated in FIG. 1 is a ladder type filter in which three sets of L-type filters are connected in series in terms of circuit configuration, and has six resonators RE1 to RE6. When the resonance frequencies of the resonators RE1 to RE3 of the series arm and the antiresonance frequencies of the resonators RE4 to RE6 of the parallel arm substantially match, the SAW filter 1 is a bandpass filter having the resonance frequency as the center frequency. Become.
【００２０】各共振器ＲＥ１〜６は、図２のように、励
振用の櫛形電極１０と、その弾性波伝播方向の両側に配
置された短絡型の反射器２０とを有している。櫛形電極
１０の励振特性は、電極指Ｆの膜厚、電極指Ｆの幅ｗ、
電極指の間隔ｄ、開口長（電極交叉幅）、及び電極対の
数によって定まる。As shown in FIG. 2, each of the resonators RE1 to RE6 has a comb-shaped electrode 10 for excitation and short-circuit type reflectors 20 arranged on both sides in the elastic wave propagation direction. The excitation characteristics of the comb electrode 10 are as follows: the film thickness of the electrode finger F, the width w of the electrode finger F,
It is determined by the distance d between the electrode fingers, the opening length (electrode crossing width), and the number of electrode pairs.
【００２１】櫛形電極１０及び反射器２０は、各共振器
ＲＥ１〜６を結ぶ配線導体とともに、フォトリソグラフ
ィを用いて多数個のＳＡＷフィルタ１について一括に形
成される。その際に、感光性レジスト材のパターン露光
の手法として、部分露光（ショット）を繰り返すステッ
プ露光法が用いられる。The comb-shaped electrodes 10 and the reflectors 20 are formed together with the wiring conductors connecting the resonators RE1 to 6 for a large number of SAW filters 1 using photolithography. At that time, a step exposure method in which partial exposure (shot) is repeated is used as a method of pattern exposure of the photosensitive resist material.
【００２２】図１の例では、６（＝２×３）個分のマス
クパターンを有したレチクルを用いて、９×１３回のシ
ョット（ステップ露光）を繰り返すことにより、圧電材
料のウエハＷＥ上に合計７０２個のＳＡＷフィルタ１の
薄膜回路導体が形成されている。ウエハＷＥを分割する
以前の段階では、個々のＳＡＷフィルタ１に対応する１
チップ分の薄膜回路導体は、焦電を防ぐために隣接する
他のチップの導体と一体化されている。In the example of FIG. 1, a reticle having 6 (= 2 × 3) mask patterns is used to repeat shots (step exposure) 9 × 13 times, so that the wafer WE of piezoelectric material is exposed. In total, 702 thin film circuit conductors of the SAW filter 1 are formed. At the stage before the wafer WE is divided, 1 corresponding to each SAW filter 1
The thin-film circuit conductor for the chip is integrated with the conductors of other adjacent chips to prevent pyroelectricity.
【００２３】以下、ＳＡＷフィルタ１における導体パタ
ーンの形成の手順を説明する。図３は本発明の電極形成
方法を示す図である。圧電基板として、例えば３６°回
転Ｙカット−Ｘ伝播ＬｉＴａＯ3 単結晶からなる３イン
チのウエハＷＥを用意する。ウエハＷＥの厚さは３００
〜５００μｍとする。The procedure of forming the conductor pattern in the SAW filter 1 will be described below. FIG. 3 is a diagram showing an electrode forming method of the present invention. As the piezoelectric substrate, a 3-inch wafer WE made of, for example, 36 ° rotated Y-cut-X propagation LiTaO 3 single crystal is prepared. The thickness of the wafer WE is 300
˜500 μm.
【００２４】蒸着又はスパッタリングなどの成膜手法を
用いて、ウエハＷＥの表面をＲＩＥによるエッチングが
容易な導電材料からなる厚さ１０００Å程度の薄膜１１
ａで被覆する。導電材料としては、アルミニウム又はそ
の合金が好ましい。また、ウエハＷＥの裏面を、チタ
ン、クロムなどの薄膜４０で被覆する〔図３（Ａ）〕。A thin film 11 having a thickness of about 1000Å made of a conductive material which is easily etched by RIE on the surface of the wafer WE by using a film forming method such as vapor deposition or sputtering.
a. Aluminum or an alloy thereof is preferable as the conductive material. Further, the back surface of the wafer WE is covered with a thin film 40 of titanium, chromium or the like [FIG. 3 (A)].
【００２５】これらの薄膜１１ａ，４０の成膜順序は任
意である。ただし、ウエハＷＥの周面で薄膜１１ａと薄
膜４０とが重なるように、成膜時におけるウエハＷＥの
配置条件を設定する。導電性の薄膜１１ａ，４０でウエ
ハＷＥを完全に被覆することにより、焦電を防止するこ
とができる。The order of forming these thin films 11a and 40 is arbitrary. However, the arrangement condition of the wafer WE at the time of film formation is set so that the thin film 11a and the thin film 40 overlap each other on the peripheral surface of the wafer WE. By completely covering the wafer WE with the conductive thin films 11a and 40, pyroelectricity can be prevented.
【００２６】次に、薄膜１１ａの上に、電極パターンに
対するネガパターンのリフトオフマスク６１、すなわち
電極指Ｆ間のスペース部分に対応した平面視形状のレジ
スト層を設ける。そして、薄膜１１ａの露出面及びリフ
トオフマスク６１の上面を、ＲＩＥによるエッチングが
困難な導電材料（例えば銅）からなる厚さが５００Å程
度の薄膜１２ａで被覆する〔図３（Ｂ）〕。Next, a lift-off mask 61 having a negative pattern with respect to the electrode pattern, that is, a resist layer having a shape in plan view corresponding to a space portion between the electrode fingers F is provided on the thin film 11a. Then, the exposed surface of the thin film 11a and the upper surface of the lift-off mask 61 are covered with a thin film 12a made of a conductive material (eg, copper) which is difficult to be etched by RIE and having a thickness of about 500 Å [FIG. 3 (B)].
【００２７】続いて、リフトオフマスク６１とともに不
要の薄膜１２ａを除去する。これにより、電極パターン
の銅の薄膜１２ａが得られる〔図３（Ｃ）〕。再び、感
光性レジストを用いて、残存する薄膜１２ａと重なるエ
ッチングマスク６２、すなわち電極パターンに相当する
ポジパターンのレジスト層を形成する〔図３（Ｄ）〕。Subsequently, the unnecessary thin film 12a is removed together with the lift-off mask 61. As a result, a copper thin film 12a having an electrode pattern is obtained [FIG. 3 (C)]. Again, the photosensitive resist is used to form an etching mask 62 overlapping the remaining thin film 12a, that is, a resist layer having a positive pattern corresponding to the electrode pattern [FIG. 3 (D)].
【００２８】エッチングマスク６２で薄膜１２ａを保護
した状態で、薄膜１１ａの内の露出部分をＲＩＥによっ
て除去し、その後にエッチングマスク６２を取り去る
〔図３（Ｅ）〕。ＲＩＥを用いることにより、ウエハＷ
Ｅを劣化させることなく、薄膜１１ａを高精度にパター
ニングすることができる。With the thin film 12a protected by the etching mask 62, the exposed portion of the thin film 11a is removed by RIE, and then the etching mask 62 is removed [FIG. 3 (E)]. By using RIE, the wafer W
The thin film 11a can be patterned with high precision without degrading E.
【００２９】以上の工程により、第１の材料からなる層
１１と第２の材料からなる層１２との２層構造の櫛形電
極１０が得られる。なお、リフトオフマスク６１及びエ
ッチングマスク６２のパターン寸法を厳密に電極パター
ンと一致させる必要はなく、最終的に所望寸法の櫛形電
極１０が得られるように、適当なマージンを設けたマス
クを形成してもよい。Through the above steps, the comb-shaped electrode 10 having a two-layer structure of the layer 11 made of the first material and the layer 12 made of the second material is obtained. It is not necessary that the pattern dimensions of the lift-off mask 61 and the etching mask 62 be exactly the same as the electrode pattern, and a mask with an appropriate margin is formed so that the comb-shaped electrode 10 having a desired dimension is finally obtained. Good.
【００３０】上述の実施例においては、複数の櫛形の電
極１０を有したＳＡＷフィルタ１を例示したが、単一の
櫛形電極１０を有したデバイスの製造に際して、本発明
を適用することができる。デバイスは、フィルタに限ら
ず遅延や発振用のデバイスであってもよい。また、電極
の形状は限定されない。Although the SAW filter 1 having a plurality of comb-shaped electrodes 10 has been illustrated in the above-described embodiments, the present invention can be applied when manufacturing a device having a single comb-shaped electrode 10. The device is not limited to the filter and may be a device for delay or oscillation. Further, the shape of the electrode is not limited.
【００３１】[0031]
【発明の効果】請求項１の発明によれば、圧電体を導電
膜で被覆した状態でリフトオフを行うので、エッチング
の困難な電極材料を用いることができ、しかも焦電を防
ぐことができる。したがって、電極材料の選択の制約が
緩和され、電極の特性の改善が容易になる。According to the first aspect of the present invention, since lift-off is performed in a state where the piezoelectric body is covered with the conductive film, it is possible to use an electrode material that is difficult to etch and prevent pyroelectricity. Therefore, the restriction on selection of the electrode material is eased, and the characteristics of the electrode can be easily improved.
【図１】ＳＡＷフィルタの導体パターンの一例を示す平
面図である。FIG. 1 is a plan view showing an example of a conductor pattern of a SAW filter.
【図２】ＳＡＷフィルタの共振器の電極構造を示す平面
図である。FIG. 2 is a plan view showing an electrode structure of a resonator of a SAW filter.
【図３】本発明の電極形成方法を示す図である。FIG. 3 is a diagram showing an electrode forming method of the present invention.
１ ＳＡＷフィルタ（弾性表面波素子） １０ 櫛形電極（電極） １１ａ 薄膜（導電膜） １２ａ 薄膜（第２の電極材料の薄膜） ６１ リフトオフマスク ６２ エッチングマスク ＷＥ 圧電材料のウエハ（圧電体） DESCRIPTION OF SYMBOLS 1 SAW filter (surface acoustic wave device) 10 Comb-shaped electrode (electrode) 11a Thin film (conductive film) 12a Thin film (second electrode material thin film) 61 Lift-off mask 62 Etching mask WE Piezoelectric material wafer (piezoelectric material)
Claims (1)
電膜を成膜し、その後に前記導電膜の上に電極パターン
に対するネガパターンのリフトオフマスクを設け、前記
導電膜の露出面を第２の電極材料の薄膜で被覆し、前記
リフトオフマスクを除去し、残存する前記薄膜と重なる
ように前記電極パターンに相当するポジパターンのエッ
チングマスクを設け、異方性エッチングによって前記導
電膜を前記電極パターンにパターニングすることを特徴
とする弾性表面波素子の電極形成方法。1. A conductive film made of a first electrode material is formed on the surface of a piezoelectric body, and then a lift-off mask having a negative pattern for the electrode pattern is provided on the conductive film to expose the exposed surface of the conductive film. The film is covered with a thin film of a second electrode material, the lift-off mask is removed, an etching mask having a positive pattern corresponding to the electrode pattern is provided so as to overlap with the remaining thin film, and the conductive film is anisotropically etched. A method for forming an electrode of a surface acoustic wave device, which comprises patterning an electrode pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18535395A JP3480626B2 (en) | 1995-07-21 | 1995-07-21 | Method for forming electrodes of surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18535395A JP3480626B2 (en) | 1995-07-21 | 1995-07-21 | Method for forming electrodes of surface acoustic wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0936687A true JPH0936687A (en) | 1997-02-07 |
| JP3480626B2 JP3480626B2 (en) | 2003-12-22 |
Family
ID=16169309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18535395A Expired - Fee Related JP3480626B2 (en) | 1995-07-21 | 1995-07-21 | Method for forming electrodes of surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3480626B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005175927A (en) * | 2003-12-11 | 2005-06-30 | Murata Mfg Co Ltd | Manufacturing method of surface acoustic wave element |
| JP2007234676A (en) * | 2006-02-27 | 2007-09-13 | Osaka Univ | Field effect transistor and method of manufacturing the same |
| JP2010530686A (en) * | 2007-06-20 | 2010-09-09 | エプコス アクチエンゲゼルシャフト | MEMS component and manufacturing method |
-
1995
- 1995-07-21 JP JP18535395A patent/JP3480626B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005175927A (en) * | 2003-12-11 | 2005-06-30 | Murata Mfg Co Ltd | Manufacturing method of surface acoustic wave element |
| JP2007234676A (en) * | 2006-02-27 | 2007-09-13 | Osaka Univ | Field effect transistor and method of manufacturing the same |
| JP2010530686A (en) * | 2007-06-20 | 2010-09-09 | エプコス アクチエンゲゼルシャフト | MEMS component and manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3480626B2 (en) | 2003-12-22 |
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