JPH0935639A - Measuring device for shadow mask structure - Google Patents

Measuring device for shadow mask structure

Info

Publication number
JPH0935639A
JPH0935639A JP17973595A JP17973595A JPH0935639A JP H0935639 A JPH0935639 A JP H0935639A JP 17973595 A JP17973595 A JP 17973595A JP 17973595 A JP17973595 A JP 17973595A JP H0935639 A JPH0935639 A JP H0935639A
Authority
JP
Japan
Prior art keywords
shadow mask
piezoelectric element
value
mask structure
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17973595A
Other languages
Japanese (ja)
Inventor
Masatake Yoshida
将剛 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP17973595A priority Critical patent/JPH0935639A/en
Publication of JPH0935639A publication Critical patent/JPH0935639A/en
Pending legal-status Critical Current

Links

Landscapes

  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a measuring device for a shadow mask of simple constitution which can perform measurement of a low Q value or precise measurement by detecting the electric continuity by the contact between an electric contact ascending and descending by a piezoelectric element and a shadow mask, and measuring the Q value from the displacement of the piezoelectric element. SOLUTION: This is a measuring device for a shadow mask structure 20, which measures the interval dimension Q value between the inner face of a reference panel 7 and a shadow mask 1 by mounting the shadow mask structure 20 on the reference panel 7. A control power source 14 made of a drive power source 11 and a control circuit 13 measures the Q value from the displacement of piezoelectric elements, using electric contacts 10, which are driven to ascend and descend by the piezoelectric elements 9, being arranged on the inner face of the reference panel 7, and a circuit 12 for detecting electric continuity between the electric contacts 10 and the shadow mask 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はカラー陰極線管の組立時
に使用される測定装置に関し、特にシャドウマスク構体
をパネルに装着するに先立ちシャドウマスクとパネルと
の間隔寸法(以下Q値と記す)を測定するのに用いられ
る測定装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a measuring apparatus used for assembling a color cathode ray tube, and more particularly, to a distance dimension (hereinafter referred to as Q value) between a shadow mask and a panel before mounting the shadow mask structure on the panel. The present invention relates to a measuring device used for measuring.

【0002】[0002]

【従来の技術】従来のシャドウマスク型カラー陰極線管
のパネル部分の組立は、特開昭60−221930号公
報に開示されている。すなわち、図2に示すように、シ
ャドウマスク1の周辺部を立ち上げて成形したスカート
部1aと、略長方形の枠状のフランジ部2aとそのフラ
ンジ部2aの外縁に略直角に立ち上げた側壁部2bとか
ら構成されたフレーム2とを溶接して組立てられたシャ
ドウマスク構体20を、フレーム2の側壁部2bに植設
したスプリング3を介してパネル4の内壁に植設したパ
ネルピン5に装着して行なわれている。
2. Description of the Related Art Assembly of a panel portion of a conventional shadow mask type color cathode ray tube is disclosed in JP-A-60-221930. That is, as shown in FIG. 2, a skirt portion 1a formed by raising the peripheral portion of the shadow mask 1, a flange portion 2a having a substantially rectangular frame shape, and a side wall raised at a substantially right angle to the outer edge of the flange portion 2a. The shadow mask structure 20 assembled by welding the frame 2 composed of the portion 2b and the frame 2 is attached to the panel pin 5 planted on the inner wall of the panel 4 via the spring 3 planted on the side wall portion 2b of the frame 2. Is being done.

【0003】この組立体におけるパネル4内面からシャ
ドウマスク1までの間隔寸法6は、一般にQ値と呼ば
れ、3色の蛍光体層の形成や画像表示のための電子ビー
ムの選択透過等の重要な寸法となるため、パネル4内面
全面に対して均一でなければならない。したがって、こ
の組立てに先立ち、シャドウマスク構体20が設計どお
りにできているかどうかをチェックするため、エアーマ
イクロメータを用いた測定装置によりQ値が所定の範囲
内であることを確認している。この測定に使用される装
置は、図3に示すように、基準パネル7の所定箇所に装
着したエアーマイクロメータ(図示せず)の測定ヘッド
8,8により構成され、このエアーマイクロメータによ
り、基準パネル7に装着したシャドウマスク1とパネル
7面との間隔(Q値)が測定されている。
A space dimension 6 from the inner surface of the panel 4 to the shadow mask 1 in this assembly is generally called a Q value, and is important for forming phosphor layers of three colors and selectively transmitting an electron beam for image display. Since it has different dimensions, it must be uniform over the entire inner surface of the panel 4. Therefore, prior to this assembly, in order to check whether or not the shadow mask structure 20 is formed as designed, it is confirmed that the Q value is within a predetermined range by a measuring device using an air micrometer. As shown in FIG. 3, the device used for this measurement is composed of measuring heads 8 and 8 of an air micrometer (not shown) attached to a predetermined position of the reference panel 7, and the air micrometer is used as a reference. The distance (Q value) between the shadow mask 1 attached to the panel 7 and the surface of the panel 7 is measured.

【0004】[0004]

【発明が解決しようとする課題】ところが、上述したエ
アーマイクロメータを使用した測定装置では、狙いとす
る所定Q値が設定より0.3mm以上異なつていると、
エアーマイクロメータの測定ヘッド8の先端とシャドウ
マスク1面とが離間し過ぎるため校正が必要となり、校
正技能を有する熟練した作業者が必要となるという問題
があった。また、0.01mm以下の低Q値に対しては
測定が困難であり、測定ヘッド8を複数とし多点同時測
定する場合、エアーの供給の配管が輻湊したり、供給圧
力が変動したりするという問題もあった。
However, in the above-mentioned measuring device using the air micrometer, if the target predetermined Q value is different from the set value by 0.3 mm or more,
There is a problem in that the tip of the measuring head 8 of the air micrometer and the surface of the shadow mask 1 are too far apart from each other, so that calibration is necessary and a skilled worker having calibration skill is required. Further, it is difficult to measure a low Q value of 0.01 mm or less, and when multiple measurement heads 8 are used for simultaneous multi-point measurement, air supply piping is congested or the supply pressure fluctuates. There was also a problem.

【0005】本発明の目的は、上述した問題点を解決す
るために、圧電素子により昇降する電気接点とシャドウ
マスクとの接触による導通を検出して、圧電素子の変位
量からQ値を測定することにより、低Q値の測定や精密
測定が容易にできる簡易な構成のシャドウマスク構体の
測定装置を提供することにある。
In order to solve the above-mentioned problems, an object of the present invention is to detect conduction due to contact between a shadow mask and an electric contact that is moved up and down by a piezoelectric element, and measure the Q value from the amount of displacement of the piezoelectric element. Accordingly, it is an object of the present invention to provide a shadow mask structure measuring apparatus having a simple structure that can easily measure a low Q value and a precise measurement.

【0006】[0006]

【課題を解決するための手段】本発明は、基準パネルに
シャドウマスク構体を装着し、パネル内面とシャドウマ
スクとの間隔寸法(Q値)を測定するシャドウマスク構
体の測定装置であって、基準パネルの内面部に配設され
圧電素子により上下駆動する電気接点と、前記電気接点
とシャドウマスクとの導通を検出する手段と、前記圧電
素子の変位量から前記Q値を測定する制御電源とを具備
するシャドウマスク構体の測定装置を提供する。また、
前記圧電素子が積層型圧電素子であり、前記電気接点が
基準パネルの上面の複数箇所に配設され、それぞれの圧
電素子の変位量が個別に測定できる構成とするのが望ま
しい。
SUMMARY OF THE INVENTION The present invention is a shadow mask structure measuring apparatus for mounting a shadow mask structure on a reference panel and measuring a distance dimension (Q value) between an inner surface of the panel and the shadow mask. An electric contact arranged on the inner surface of the panel and driven up and down by a piezoelectric element, means for detecting conduction between the electric contact and the shadow mask, and a control power supply for measuring the Q value from the displacement amount of the piezoelectric element. An apparatus for measuring a shadow mask structure provided is provided. Also,
It is desirable that the piezoelectric element is a laminated piezoelectric element, the electrical contacts are provided at a plurality of positions on the upper surface of the reference panel, and the displacement amount of each piezoelectric element can be individually measured.

【0007】[0007]

【作用】上記構成によれば、圧電素子は印加電圧に比例
して正確に変位するため、圧電素子で上下に変位する電
気接点を用いて、シャドウマスクと導通する変位量から
Q値を測定することにより低Q値の測定や精密測定が容
易にでき、校正等の熟練作業者も不要となる。また、測
定素子を小型にでき、エアーの供給のための空気チュー
ブ等の部材も不要なため、多点同時測定が容易となる。
さらに、積層型圧電素子を使用すれば、印加電圧に対す
る変位の応答性を向上できるため、電気接点とシャドウ
マスクとの接触と同時に電圧の上昇を止めることによ
り、変位の慣性によるシャドウマスクの変形等の応力の
印加を防止できるとともに、多段化による変位量の増加
等も容易に可能となる。
According to the above construction, since the piezoelectric element is accurately displaced in proportion to the applied voltage, the Q value is measured from the displacement amount conducted to the shadow mask by using the electrical contact which is vertically displaced by the piezoelectric element. As a result, low Q value measurement and precise measurement can be easily performed, and a skilled worker such as calibration is unnecessary. Further, the measuring element can be downsized, and a member such as an air tube for supplying air is not required, which facilitates simultaneous measurement at multiple points.
Furthermore, if a laminated piezoelectric element is used, the response of the displacement to the applied voltage can be improved. Therefore, by stopping the voltage rise at the same time as the contact between the electrical contact and the shadow mask, the deformation of the shadow mask due to the inertia of the displacement, etc. It is possible to prevent the application of stress and increase the amount of displacement easily due to the multistage structure.

【0008】[0008]

【実施例】以下、本発明について、図面を参照して説明
する。従来例と同一部分には同一参照符号を付し説明を
省略する。本発明の一実施例のシャドウマスク構体の測
定装置は、図1に示すように、基準パネル7の所定箇所
に複数の積層型圧電素子9,9が装着され、その圧電素
子9,9のシャドウマスク1と対向する上面には電気接
点10,10が設けられている。そして、圧電素子9,
9には駆動電源11よりそれぞれ個別に駆動電圧が供給
され、電気接点10は導通検出回路12に接続され、導
通検出回路12からの信号により、制御回路13を介し
て駆動電源11が制御されるよう制御電源14が構成さ
れている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. The same parts as those in the conventional example are denoted by the same reference numerals, and description thereof will be omitted. As shown in FIG. 1, a shadow mask structure measuring apparatus according to an embodiment of the present invention has a plurality of laminated piezoelectric elements 9 and 9 mounted at predetermined positions on a reference panel 7, and shadows of the piezoelectric elements 9 and 9 are attached. Electrical contacts 10, 10 are provided on the upper surface facing the mask 1. Then, the piezoelectric element 9,
A driving voltage is individually supplied to each of 9 from the driving power source 11, the electrical contact 10 is connected to the continuity detecting circuit 12, and the driving power source 11 is controlled by the signal from the continuity detecting circuit 12 via the control circuit 13. The control power supply 14 is configured so.

【0009】この測定装置によるシャドウマスク構体の
測定は下記のように行なわれる。すなわち、シャドウマ
スク構体20を基準パネル7に装着されたパネルピン5
にスプリング3を介して装着し、シャドウマスク構体2
0と導通検出回路12に接続する。そして、圧電素子9
毎に駆動電源11から駆動電圧を供給して電気接点10
を上昇させ、電気接点10がシャドウマスク1と接触す
ると導通検出回路12により導通が検出されるととも
に、制御回路13を介して該圧電素子9への駆動電圧が
解除され、その電圧値から変位量が測定される。このよ
うにして所定の複数箇所のQ値が測定され、そのQ値が
所定の範囲内に入っていれば、シャドウマスク構体20
は良品として使用され、所定の範囲外であれば、不良と
して除去され修理される。この実施例によれば、圧電素
子9は印加電圧に比例して正確に変位するため、圧電素
子9のシャドウマスク1と導通する変位量からQ値を測
定することにより低Q値の測定や精密測定が容易にで
き、校正等の熟練作業者も不要となる。また、測定素子
を小型にでき、エアーの供給のための空気チューブ等の
部材も不要なため、多点同時測定が容易となる。
The measurement of the shadow mask structure by this measuring device is performed as follows. That is, the shadow mask structure 20 is attached to the reference panel 7, and the panel pin 5 is attached.
Attached to the shadow mask structure 2 via the spring 3
0 and the continuity detection circuit 12. And the piezoelectric element 9
A drive voltage is supplied from the drive power source 11 for each electric contact 10
When the electric contact 10 comes into contact with the shadow mask 1, conduction is detected by the conduction detection circuit 12, and the drive voltage to the piezoelectric element 9 is released via the control circuit 13, and the displacement amount is changed from the voltage value. Is measured. In this way, the Q values at a plurality of predetermined positions are measured, and if the Q values are within the predetermined range, the shadow mask structure 20
Is used as a good product, and if it is out of a predetermined range, it is removed as a defect and repaired. According to this embodiment, the piezoelectric element 9 is accurately displaced in proportion to the applied voltage. Therefore, by measuring the Q value from the displacement amount of the piezoelectric element 9 which is electrically connected to the shadow mask 1, it is possible to measure a low Q value or to perform precise measurement. The measurement can be done easily, and skilled operators such as calibration are not required. Further, the measuring element can be downsized, and a member such as an air tube for supplying air is not required, which facilitates simultaneous measurement at multiple points.

【0010】さらに、積層型圧電素子を使用しているた
め、印加電圧に対する変位の応答性を向上でき、電気接
点10とシャドウマスク1との接触と同時に電圧の上昇
を止めることにより、変位の慣性によるシャドウマスク
1の変形等の応力の印加を防止できるとともに、多段化
による変位量の増加等も容易に可能となる。以上、積層
型圧電素子を使用したシャドウマスク構体のQ値測定装
置について説明したが、本発明は上述の例に限定され
ず、例えば、バイモルフ型圧電素子を使用すれば、若干
応答性が低下するものの、変位量を大きくすることがで
きるため、比較的大きなQ値を有するシャドウマスク構
体の測定には適している。
Further, since the laminated piezoelectric element is used, the responsiveness of the displacement to the applied voltage can be improved, and by stopping the rise of the voltage at the same time as the contact between the electric contact 10 and the shadow mask 1, the inertia of the displacement can be improved. It is possible to prevent the application of stress such as deformation of the shadow mask 1 due to the above, and it is also possible to easily increase the displacement amount due to the multi-stage. Although the Q value measuring device for the shadow mask structure using the laminated piezoelectric element has been described above, the present invention is not limited to the above-mentioned example. For example, if a bimorph type piezoelectric element is used, the responsiveness is slightly lowered. However, since the displacement amount can be increased, it is suitable for measuring a shadow mask structure having a relatively large Q value.

【0011】[0011]

【発明の効果】本発明によれば、圧電素子は印加電圧に
比例して正確に変位するため、圧電素子で上下に変位す
る電気接点を用いて、シャドウマスクと導通する変位量
からQ値を測定することにより低Q値の測定や精密測定
が容易にでき、校正等の熟練作業者も不要となる。ま
た、測定素子を小型にでき、エアーの供給のための空気
チューブ等の部材も不要なため、多点同時測定が容易と
なる。さらに、積層型圧電素子を使用すれば、印加電圧
に対する変位の応答性を向上できるため、電気接点とシ
ャドウマスクとの接触と同時に電圧の上昇を止めること
により、変位の慣性によるシャドウマスクの変形等の応
力の印加を防止できるとともに、多段化による変位量の
増加等も容易に可能となる。
According to the present invention, since the piezoelectric element is accurately displaced in proportion to the applied voltage, the Q value can be calculated from the displacement amount conducted to the shadow mask by using the electric contact which is vertically displaced by the piezoelectric element. By performing the measurement, low Q value measurement and precise measurement can be easily performed, and a skilled worker for calibration or the like becomes unnecessary. Further, the measuring element can be downsized, and a member such as an air tube for supplying air is not required, which facilitates simultaneous measurement at multiple points. Furthermore, if a laminated piezoelectric element is used, the response of the displacement to the applied voltage can be improved. Therefore, by stopping the voltage rise at the same time as the contact between the electrical contact and the shadow mask, the deformation of the shadow mask due to the inertia of the displacement, etc. It is possible to prevent the application of stress and increase the amount of displacement easily due to the multistage structure.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の一実施例のシャドウマスク構体の測
定装置の構成図
FIG. 1 is a configuration diagram of a shadow mask structure measuring apparatus according to an embodiment of the present invention.

【図2】 シャドウマスク構体のパネルへの組立を示す
要部断面図
FIG. 2 is a sectional view of an essential part showing assembly of a shadow mask structure into a panel.

【図3】 従来のシャドウマスク構体の測定装置の断面
FIG. 3 is a sectional view of a conventional shadow mask structure measuring apparatus.

【符号の説明】[Explanation of symbols]

1 シャドウマスク 3 スプリング 5 パネルピン 7 基準パネル 9 圧電素子 10 電気接点 11 駆動電源 12 導通検出回路(導通を検出する手段) 13 制御回路 14 制御電源 20 シャドウマスク構体 1 Shadow Mask 3 Spring 5 Panel Pin 7 Reference Panel 9 Piezoelectric Element 10 Electrical Contact 11 Drive Power Supply 12 Continuity Detection Circuit (Means for Detecting Continuity) 13 Control Circuit 14 Control Power Supply 20 Shadow Mask Structure

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】基準パネルにシャドウマスク構体を装着
し、パネル内面とシャドウマスクとの間隔寸法を測定す
るシャドウマスク構体の測定装置であって、基準パネル
の内面部に配設され圧電素子により上下駆動する電気接
点と、前記電気接点とシャドウマスクとの導通を検出す
る手段と、前記圧電素子の変位量から前記間隔寸法を測
定する制御電源とを具備することを特徴とするシャドウ
マスク構体の測定装置。
1. A shadow mask structure measuring device for mounting a shadow mask structure on a reference panel to measure a distance between an inner surface of the panel and the shadow mask. Measurement of a shadow mask structure comprising: an electric contact to be driven; a means for detecting conduction between the electric contact and the shadow mask; and a control power supply for measuring the distance dimension from the displacement amount of the piezoelectric element. apparatus.
【請求項2】前記圧電素子が積層型圧電素子であること
を特徴とする請求項1記載のシャドウマスク構体の測定
装置。
2. The shadow mask structure measuring apparatus according to claim 1, wherein the piezoelectric element is a laminated piezoelectric element.
【請求項3】前記電気接点が基準パネルの内面部の複数
箇所に配設され、それぞれの圧電素子の変位量が個別に
測定できる制御電源を具備することを特徴とする請求項
1記載のシャドウマスク構体の測定装置。
3. The shadow according to claim 1, wherein the electrical contacts are provided at a plurality of locations on the inner surface of the reference panel, and a control power source is provided which can individually measure the displacement amount of each piezoelectric element. Measuring device for mask structure.
JP17973595A 1995-07-17 1995-07-17 Measuring device for shadow mask structure Pending JPH0935639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17973595A JPH0935639A (en) 1995-07-17 1995-07-17 Measuring device for shadow mask structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17973595A JPH0935639A (en) 1995-07-17 1995-07-17 Measuring device for shadow mask structure

Publications (1)

Publication Number Publication Date
JPH0935639A true JPH0935639A (en) 1997-02-07

Family

ID=16070960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17973595A Pending JPH0935639A (en) 1995-07-17 1995-07-17 Measuring device for shadow mask structure

Country Status (1)

Country Link
JP (1) JPH0935639A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007026697A (en) * 2005-07-12 2007-02-01 Rohm Co Ltd Field emission type display device and method of manufacturing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007026697A (en) * 2005-07-12 2007-02-01 Rohm Co Ltd Field emission type display device and method of manufacturing same

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