JPH09325113A - Evanescent ellipso-sensor - Google Patents
Evanescent ellipso-sensorInfo
- Publication number
- JPH09325113A JPH09325113A JP8141698A JP14169896A JPH09325113A JP H09325113 A JPH09325113 A JP H09325113A JP 8141698 A JP8141698 A JP 8141698A JP 14169896 A JP14169896 A JP 14169896A JP H09325113 A JPH09325113 A JP H09325113A
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- prism
- light beam
- evanescent
- sample liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プリズムに入射さ
せた光ビームを該プリズムと試料との界面で全反射さ
せ、この全反射による光ビームの偏光状態の変化を検出
して、試料中の物質を分析するエバネッセントエリプソ
センサーに関するものである。TECHNICAL FIELD The present invention relates to total reflection of a light beam incident on a prism at an interface between the prism and the sample, and detection of a change in the polarization state of the light beam due to this total reflection to detect the change in the polarization state of the sample. The present invention relates to an evanescent ellipsosensor for analyzing a substance.
【０００２】[0002]
【従来の技術】第１媒質中を進行する光ビームが、該第
１媒質とそれよりも低屈折率の第２媒質との界面で全反
射するとき、第２媒質側にエバネッセント波と呼ばれる
光が漏れ出ることが知られている。上記界面に光ビーム
を入射させた際には、全反射の前と後とで光の電場は位
相が変化し、そしてそれはｐ成分（反射界面に垂直）と
ｓ成分（反射界面に平行）とで異なる変化をする。そし
てこの偏光状態の変化は、上記エバネッセント波と相互
作用する第２媒質に応じた固有のものとなる。2. Description of the Related Art When a light beam traveling in a first medium is totally reflected at an interface between the first medium and a second medium having a lower refractive index than that, a light called an evanescent wave is transmitted to the second medium side. Is known to leak out. When a light beam is incident on the above interface, the electric field of the light changes its phase before and after total reflection, and it has a p component (perpendicular to the reflective interface) and an s component (parallel to the reflective interface). Makes different changes. Then, this change in the polarization state is unique to the second medium that interacts with the evanescent wave.
【０００３】従来より、この現象を利用して、例えばPH
YSICAL REVIEW LETTERS Vol.57,No.24,15 December 198
6 pp.3065 〜3068に記載されているように、試料とプリ
ズムとの界面で光ビームを全反射させる構成に、位相差
の変化つまり偏光状態の変化を検出する技術（エリプソ
メトリー）を適用して、試料中の物質を分析するエバネ
ッセントエリプソセンサーが公知となっている。このエ
バネッセントエリプソセンサーは、上記第１媒質として
プリズムを用い、その一面に上記第２媒質としての試料
を密着させておき、それらの界面で光ビームを全反射さ
せ、この全反射による偏光状態の変化を検出して、試料
中の物質の物性や総量を測定するものである。Conventionally, by utilizing this phenomenon, for example, PH
YSICAL REVIEW LETTERS Vol.57, No.24,15 December 198
As described in 6 pp.3065 to 3068, a technique (ellipsometry) that detects a change in phase difference, that is, a change in polarization state, is applied to the structure in which the light beam is totally reflected at the interface between the sample and the prism. Thus, an evanescent ellipsosensor for analyzing a substance in a sample has been known. In this evanescent ellipsometer, a prism is used as the first medium, a sample as the second medium is brought into close contact with one surface of the prism, the light beam is totally reflected at the interface between them, and the polarization state changes due to the total reflection. Is detected to measure the physical properties and total amount of substances in the sample.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上述した従来
のエバネッセントエリプソセンサーにおいては、試料液
に微量含まれる物質を分析する際に、分析対象物質の検
出感度が低く、またその分析に長い時間を要するという
問題が認められる。However, in the above-mentioned conventional evanescent ellipsosensor, when a substance contained in the sample solution in a trace amount is analyzed, the detection sensitivity of the substance to be analyzed is low, and a long time is required for the analysis. The problem of cost is recognized.
【０００５】本発明は上記の事情に鑑みてなされたもの
であり、試料液中の物質を短時間で、かつ高感度で分析
可能なエバネッセントエリプソセンサーを提供すること
を目的とする。The present invention has been made in view of the above circumstances, and an object thereof is to provide an evanescent ellipsosensor capable of analyzing a substance in a sample liquid in a short time with high sensitivity.
【０００６】[0006]
【課題を解決するための手段】本発明によるエバネッセ
ントエリプソセンサーは、請求項１に記載の通り、プリ
ズムと、このプリズムの一面に形成されて、試料液に接
触させられる透明電極と、所定の偏光状態とした光ビー
ムを、試料液と透明電極との界面で全反射するように、
該プリズム側から入射させるビーム照射系と、上記光ビ
ームの、上記全反射による偏光状態の変化を検出する手
段と、上記透明電極との間に試料液を挟んで該透明電極
に対面するように配置された対向電極と、この対向電極
と上記透明電極との間に直流電圧を印加する手段とから
なることを特徴とするものである。According to a first aspect of the present invention, an evanescent ellipsometer sensor has a prism, a transparent electrode formed on one surface of the prism and brought into contact with a sample solution, and a predetermined polarized light. The light beam in the state is totally reflected at the interface between the sample liquid and the transparent electrode,
A beam irradiation system which is incident from the prism side, a means for detecting a change in the polarization state of the light beam due to the total reflection, and a sample liquid sandwiched between the transparent electrode and face the transparent electrode. It is characterized by comprising a counter electrode arranged and means for applying a DC voltage between the counter electrode and the transparent electrode.
【０００７】また、本発明による第２のエバネッセント
エリプソセンサーは、上記第１のエバネッセントエリプ
ソセンサーにおいて、電圧印加用に設けた対向電極側で
も試料分析を行なえるようにしたものであり、具体的に
は請求項２に記載の通り、一面に、前述した対向電極と
しての第２の透明電極が形成された第２のプリズムと、
所定の偏光状態とした第２の光ビームを、試料液と第２
の透明電極との界面で全反射するように、該第２のプリ
ズム側から入射させる第２のビーム照射系と、第２の光
ビームの、上記全反射による偏光状態の変化を検出する
手段とを備えたことを特徴とするものである。The second evanescent ellipsosensor according to the present invention is the same as the above-mentioned first evanescent ellipsosensor, but it is possible to perform sample analysis even on the counter electrode side provided for voltage application. As described in claim 2, a second prism having the above-mentioned second transparent electrode as a counter electrode formed on one surface thereof,
The second light beam with a predetermined polarization state
A second beam irradiation system in which the light is incident from the second prism side so as to be totally reflected at the interface with the transparent electrode, and means for detecting a change in the polarization state of the second light beam due to the total reflection. It is characterized by having.
【０００８】[0008]
【発明の効果】本発明のエバネッセントエリプソセンサ
ーは、間に試料液を挟んだ透明電極と対向電極との間に
直流電圧が印加される構成となっているので、試料液中
で電荷を持っている分析対象物質を透明電極に電着させ
ることができる。なお電圧印加の極性は、分析対象物質
が陽イオンであるか陰イオンであるか等に応じて選択し
ておけばよい。The evanescent ellipsosensor of the present invention has a structure in which a DC voltage is applied between a transparent electrode and a counter electrode with a sample solution sandwiched between them, so that there is no charge in the sample solution. The target substance to be analyzed can be electrodeposited on the transparent electrode. The polarity of the voltage application may be selected according to whether the substance to be analyzed is a cation or an anion.
【０００９】この電着により、試料液の透明電極に接す
る部分では分析対象物質の濃度が高くなるので、分析対
象物質を高感度で分析可能となる。特に抗原・抗体反応
を利用して試料液中の物質を検出する場合、つまり例え
ば透明電極上に抗原（あるいは抗体）を固定し、それに
特異的に吸着する試料液中の抗体（あるいは抗原）を検
出するような場合は、分析対象物質の濃度が高くなるこ
とにより、質量作用の法則によってこの反応も促進され
るので、高感度かつ短時間での分析が可能となる。By this electrodeposition, the concentration of the substance to be analyzed becomes high in the portion of the sample liquid in contact with the transparent electrode, so that the substance to be analyzed can be analyzed with high sensitivity. In particular, when detecting a substance in a sample solution by utilizing an antigen-antibody reaction, that is, for example, an antigen (or antibody) is immobilized on a transparent electrode and the antibody (or antigen) in the sample solution that specifically adsorbs it is fixed. In the case of detection, as the concentration of the substance to be analyzed becomes high, this reaction is also promoted by the law of mass action, so that highly sensitive and short-time analysis is possible.
【００１０】なお、プリズムの一面に形成された電圧印
加用の電極は透明電極であるので、この電極が形成され
ていない従来装置におけるのと同様にエバネッセント波
が試料液中に漏れ出す。したがって、試料分析はこの電
極に妨げられることなく行なわれ得る。Since the electrode for voltage application formed on one surface of the prism is a transparent electrode, the evanescent wave leaks into the sample liquid as in the conventional device in which this electrode is not formed. Therefore, sample analysis can be carried out unimpeded by this electrode.
【００１１】上記透明電極とプリズムは、光ビームを全
反射させるために試料液よりも高屈折率の材料から形成
する必要があり、そしてプリズムと電極との界面での反
射、電極膜中での多重反射干渉を防ぐという点から、透
明電極とプリズムは屈折率が互いに等しい材料から形成
されるのが望ましい。The transparent electrode and the prism must be formed of a material having a refractive index higher than that of the sample liquid in order to totally reflect the light beam, and reflection at the interface between the prism and the electrode and in the electrode film. From the viewpoint of preventing multiple reflection interference, it is desirable that the transparent electrode and the prism are formed of materials having the same refractive index.
【００１２】また特に本発明による第２のエバネッセン
トエリプソセンサーは、対向電極を透明電極とした上
で、この対向電極に対してもプリズム、ビーム照射系お
よび偏光状態の変化を検出する手段を設けて、該対向電
極側でも試料分析を行なえるようにしたので、試料液中
で生の電荷を持っている物質と、負の電荷を持っている
物質の双方を同時に分析可能となる。Further, in particular, in the second evanescent ellipsosensor according to the present invention, the counter electrode is a transparent electrode, and the counter electrode is also provided with a prism, a beam irradiation system, and means for detecting a change in the polarization state. Since the sample can be analyzed also on the counter electrode side, it is possible to simultaneously analyze both the substance having a raw charge and the substance having a negative charge in the sample solution.
【００１３】[0013]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を詳細に説明する。図１は、本発明の第１の実
施形態であるエバネッセントエリプソセンサーの側面形
状を示すものである。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 shows a side surface shape of an evanescent ellipso sensor which is a first embodiment of the present invention.
【００１４】図示されるようにこのエバネッセントエリ
プソセンサーは、断面三角形のプリズム10と、このプリ
ズム10の一面（図中の上面）に形成されて、試料液11に
接触させられる透明電極12と、１本の光ビーム13を発生
させるレーザー光源14と、この光源14から出射した光ビ
ーム13の偏光状態を制御する偏光子15およびλ／４板16
と、プリズム10と透明電極12との界面10ａで全反射した
光ビーム13の光路に配された検光子17と、この検光子17
を通過した光ビーム13の強度を検出する光検出手段18と
を備えている。As shown in the figure, the evanescent ellipsosensor has a prism 10 having a triangular cross section, a transparent electrode 12 formed on one surface (upper surface in the drawing) of the prism 10 and brought into contact with a sample solution 11, and 1 A laser light source 14 for generating a light beam 13 of a book, a polarizer 15 for controlling the polarization state of the light beam 13 emitted from the light source 14, and a λ / 4 plate 16
And an analyzer 17 arranged in the optical path of the light beam 13 totally reflected at the interface 10a between the prism 10 and the transparent electrode 12, and this analyzer 17
And a light detection means 18 for detecting the intensity of the light beam 13 that has passed through.
【００１５】また、上記透明電極12と適当な間隔をおい
て対面するように対向電極19が配設されている。この対
向電極19は、図中上下方向に中心軸が延びる筒状の保持
部材20に保持されており、透明電極12と対向電極19との
間の空間は、周囲をこの保持部材20によって閉じられる
状態となる。そして透明電極12と対向電極19にはそれぞ
れ、直流電源21の正極、負極が接続されている。Further, a counter electrode 19 is arranged so as to face the transparent electrode 12 at an appropriate interval. The counter electrode 19 is held by a cylindrical holding member 20 whose central axis extends in the vertical direction in the drawing, and the space between the transparent electrode 12 and the counter electrode 19 is closed by the holding member 20 at the periphery. It becomes a state. The positive electrode and the negative electrode of the DC power source 21 are connected to the transparent electrode 12 and the counter electrode 19, respectively.
【００１６】レーザー光源14、偏光子15およびλ／４板
16からなるビーム照射系は、光ビーム13が上記界面10ａ
に全反射角以上の入射角で入射するように配置されてい
る。また偏光子15およびλ／４板16は光ビーム13を、界
面10ａで全反射後に直線偏光となるような楕円偏光とす
る。また検光子17は光軸周りに回転されるようになって
いる。Laser light source 14, polarizer 15 and λ / 4 plate
In the beam irradiation system consisting of 16, the light beam 13 is applied to the interface 10a.
Is arranged so as to be incident at an incident angle larger than the total reflection angle. Further, the polarizer 15 and the λ / 4 plate 16 make the light beam 13 elliptically polarized light which becomes linearly polarized light after total reflection at the interface 10a. Further, the analyzer 17 is adapted to be rotated around the optical axis.
【００１７】以下、上記構成のエバネッセントエリプソ
センサーによる試料分析について説明する。透明電極12
と対向電極19との間の空間には、陰イオン化した分析対
象物質30を含む試料液11が満たされる。また直流電源21
により、透明電極12と対向電極19との間に直流電圧が印
加される。そして、上述のような楕円偏光とされた光ビ
ーム13が、透明電極12に向けて照射される。この透明電
極12とプリズム10との界面10ａで全反射した光ビーム13
は、光検出手段18によって検出される。The sample analysis by the evanescent ellipsometer having the above structure will be described below. Transparent electrode 12
The space between the counter electrode 19 and the counter electrode 19 is filled with the sample liquid 11 containing the anionized analyte 30. DC power supply 21
Thereby, a DC voltage is applied between the transparent electrode 12 and the counter electrode 19. Then, the elliptically polarized light beam 13 as described above is emitted toward the transparent electrode 12. The light beam 13 totally reflected at the interface 10a between the transparent electrode 12 and the prism 10.
Are detected by the light detecting means 18.
【００１８】上記のように光ビーム13が界面10ａで全反
射するとき、入射光と反射光とでは、そのｐ偏光成分
（界面10ａに平行な振動面を有する偏光成分）とｓ偏光
成分（界面10ａに垂直な振動面を有する偏光成分）との
位相差が異なる。この全反射による位相差の変化つまり
偏光状態の変化は、前述した通り、透明電極12に付着し
ている分析対象物質30の物性および総量を反映したもの
となる。そこで、光検出手段18の出力Ｓが最小となるよ
うに検光子17を回転させ、そのときの回転角から、全反
射による偏光状態の変化、つまりは分析対象物質30の物
性および総量を求めることができる。When the light beam 13 is totally reflected at the interface 10a as described above, the p-polarized component (polarized component having a vibrating plane parallel to the interface 10a) and the s-polarized component (interface) are included in the incident light and the reflected light. 10a has a different phase difference from that of a polarized light component having a vibration plane perpendicular to 10a. The change in the phase difference due to the total reflection, that is, the change in the polarization state reflects the physical properties and the total amount of the substance 30 to be analyzed attached to the transparent electrode 12, as described above. Therefore, the analyzer 17 is rotated so that the output S of the light detecting means 18 is minimized, and the change in the polarization state due to total reflection, that is, the physical properties and the total amount of the analyte 30 are determined from the rotation angle at that time. You can
【００１９】また、上述のように直流電源21に接続され
た透明電極12と対向電極19との間に直流電圧が印加され
るので、試料液11中で陰イオン化している分析対象物質
30は透明電極12に電着する。そこで、試料液11の透明電
極12に接する部分では分析対象物質30の濃度が高くな
り、該分析対象物質30を高感度で短時間内に分析可能と
なる。このように陰イオン化する分析対象物質30として
は、例えば水酸化ナトリウムに溶解しているヒト血清ト
ランスフェリン等が挙げられる。Since a DC voltage is applied between the transparent electrode 12 connected to the DC power source 21 and the counter electrode 19 as described above, the substance to be analyzed anionized in the sample liquid 11
30 is electrodeposited on the transparent electrode 12. Therefore, the concentration of the substance 30 to be analyzed becomes high in the portion of the sample liquid 11 in contact with the transparent electrode 12, and the substance 30 to be analyzed can be analyzed with high sensitivity in a short time. Examples of the substance 30 to be anionized in this manner include human serum transferrin dissolved in sodium hydroxide.
【００２０】なお、前述した抗原・抗体反応を利用して
試料液11中の物質30を検出する際等は、光ビーム13の偏
光状態の変化を、抗原・抗体反応が進む中で時間を追っ
てリアルタイムで観測したい場合がある。本装置によれ
ば、上述の通り分析対象物質30を短時間内に検出可能で
あるから、このようなリアルタイムの観測も短時間内に
済ますことができる。When the substance 30 in the sample solution 11 is detected by utilizing the above-described antigen / antibody reaction, the change in the polarization state of the light beam 13 is changed with time as the antigen / antibody reaction proceeds. Sometimes you want to observe in real time. According to the present apparatus, the substance 30 to be analyzed can be detected within a short time as described above, so that such real-time observation can be completed within a short time.
【００２１】以上の実施形態においては、光ビーム13の
全反射による偏光状態の変化を、回転する検光子17と光
検出手段18とによって検出しているが、この偏光状態の
変化はその他の公知の手法、例えばＰＥＭ（photoelast
ic modulator）を用いる方法等によって検出することも
可能である。In the above embodiment, the change of the polarization state due to the total reflection of the light beam 13 is detected by the rotating analyzer 17 and the light detecting means 18, but this change of the polarization state is known. Method such as PEM (photoelast
It can also be detected by a method using an ic modulator).
【００２２】次に図２を参照して、本発明の第２の実施
形態について説明する。なおこの図２において、図１中
の要素と同等の要素には同番号を付し、それらについて
の重複した説明は省略する。Next, a second embodiment of the present invention will be described with reference to FIG. In FIG. 2, elements that are the same as the elements in FIG. 1 are given the same reference numerals, and overlapping descriptions thereof will be omitted.
【００２３】この図２のエバネッセントエリプソセンサ
ーは図１のものと比べると、基本的に、第２のプリズム
40、第２の光ビーム43を発生させる第２の光源44、第２
の偏光子45、第２のλ／４板46、第２の検光子47および
第２の光検出手段48が付加された点が異なるものであ
る。またこの場合、対向電極19としては、特に透明電極
が用いられている。The evanescent ellipsosensor shown in FIG. 2 is basically the same as that shown in FIG.
40, a second light source 44 for generating a second light beam 43, a second
The difference is that a polarizer 45, a second λ / 4 plate 46, a second analyzer 47 and a second light detecting means 48 are added. Further, in this case, a transparent electrode is particularly used as the counter electrode 19.
【００２４】上述の付加された要素は、透明電極からな
る対向電極19を前記透明電極12と同様に利用して、もう
１つ別のエバネッセントエリプソセンサーを構成する。
つまり、これら第２のプリズム40、第２の光源44、第２
の偏光子45、第２のλ／４板46、第２の検光子47および
第２の光検出手段48は、それぞれプリズム10、光源14、
偏光子15、λ／４板16、検光子17および光検出手段18と
同様の作用を果たす。この図２のエバネッセントエリプ
ソセンサーにおいて、試料液11中で陰イオン化している
物質30の分析は前述と同様にしてなされる。本装置では
それに加えて、試料液11中で陽イオン化している分析対
象物質31が対向電極19に電着する。そこで、上記第２の
プリズム40、第２の光源44、第２の偏光子45、第２のλ
／４板46、第２の検光子47および第２の光検出手段48に
より、上記物質31の分析が同様になされ得る。The above-mentioned added elements constitute another evanescent ellipsosensor by utilizing the counter electrode 19 made of a transparent electrode in the same manner as the transparent electrode 12.
That is, these second prism 40, second light source 44, second
The polarizer 45, the second λ / 4 plate 46, the second analyzer 47 and the second light detecting means 48 are respectively the prism 10, the light source 14, and
The polarizer 15, the λ / 4 plate 16, the analyzer 17, and the light detecting means 18 have the same functions. In the evanescent ellipsometer of FIG. 2, the substance 30 anionized in the sample liquid 11 is analyzed in the same manner as described above. In this device, in addition to that, the analyte 31 which has been cationized in the sample liquid 11 is electrodeposited on the counter electrode 19. Therefore, the second prism 40, the second light source 44, the second polarizer 45, the second λ
By the / 4 plate 46, the second analyzer 47 and the second light detecting means 48, the substance 31 can be analyzed in the same manner.
【００２５】そしてこの場合、試料液11の対向電極19に
接する部分では分析対象物質31の濃度が高くなり、該分
析対象物質31を高感度で短時間内に分析可能となる。In this case, the concentration of the substance 31 to be analyzed becomes high at the portion of the sample liquid 11 which is in contact with the counter electrode 19, and the substance 31 to be analyzed can be analyzed with high sensitivity in a short time.
【図１】本発明の第１の実施形態であるエバネッセント
エリプソセンサーの側面図FIG. 1 is a side view of an evanescent ellipso sensor according to a first embodiment of the present invention.
【図２】本発明の第２の実施形態であるエバネッセント
エリプソセンサーの側面図FIG. 2 is a side view of an evanescent ellipso sensor which is a second embodiment of the present invention.
10 プリズム 10ａ プリズムと透明電極との界面 11 試料液 12 透明電極 13 光ビーム 14 光源 15 偏光子 16 λ／４板 17 検光子 18 光検出手段 19 対向電極 20 保持部材 21 直流電源 30、31 分析対象物質 40 第２のプリズム 43 第２の光ビーム 44 第２の光源 45 第２の偏光子 46 第２のλ／４板 47 第２の検光子 48 第２の光検出手段 10 Prism 10a Interface between prism and transparent electrode 11 Sample liquid 12 Transparent electrode 13 Light beam 14 Light source 15 Polarizer 16 λ / 4 plate 17 Analyzer 18 Photodetector 19 Counter electrode 20 Holding member 21 DC power supply 30, 31 Analysis target Material 40 Second prism 43 Second light beam 44 Second light source 45 Second polarizer 46 Second λ / 4 plate 47 Second analyzer 48 Second light detecting means
Claims (2)
れる透明電極と、 所定の偏光状態とした光ビームを、前記試料液と透明電
極との界面で全反射するように、該プリズム側から入射
させるビーム照射系と、 前記光ビームの、前記全反射による偏光状態の変化を検
出する手段と、 前記透明電極との間に試料液を挟んで該透明電極に対面
するように配置された対向電極と、 この対向電極と前記透明電極との間に直流電圧を印加す
る手段とからなるエバネッセントエリプソセンサー。1. A prism, a transparent electrode formed on one surface of the prism and brought into contact with a sample liquid, and a light beam having a predetermined polarization state are totally reflected at an interface between the sample liquid and the transparent electrode. As described above, a beam irradiation system that is incident from the prism side, a unit that detects a change in the polarization state of the light beam due to the total reflection, and a sample liquid is sandwiched between the transparent electrode and the transparent electrode. An evanescent ellipsosensor comprising a counter electrode arranged in such a manner that a DC voltage is applied between the counter electrode and the transparent electrode.
明電極が形成された第２のプリズムと、 所定の偏光状態とした第２の光ビームを、前記試料液と
第２の透明電極との界面で全反射するように、該第２の
プリズム側から入射させる第２のビーム照射系と、 前記第２の光ビームの、前記全反射による偏光状態の変
化を検出する手段とを備えたことを特徴とする請求項１
記載のエバネッセントエリプソセンサー。2. A second prism having a second transparent electrode formed on one surface thereof as the counter electrode, and a second light beam having a predetermined polarization state, the sample liquid and the second transparent electrode. And a means for detecting a change in the polarization state of the second light beam due to the total reflection so as to be totally reflected at the interface with the second prism. Claim 1 characterized by the above.
Evanescent Ellipso Sensor described.
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14169896A JP3578187B2 (en) | 1996-06-04 | 1996-06-04 | Evanescent ellipso sensor |
| EP06001541A EP1650548A3 (en) | 1996-04-30 | 1997-04-29 | Surface plasmon sensor |
| EP06001540A EP1650547B1 (en) | 1996-04-30 | 1997-04-29 | Surface plasmon sensor |
| EP06001542A EP1650549A3 (en) | 1996-04-30 | 1997-04-29 | Surface plasmon sensor |
| EP06001543A EP1650550B1 (en) | 1996-04-30 | 1997-04-29 | Surface plasmon sensor |
| EP97107066A EP0805347A3 (en) | 1996-04-30 | 1997-04-29 | Surface plasmon sensor |
| US08/841,620 US5907408A (en) | 1996-04-30 | 1997-04-30 | Surface plasmon sensor |
| US09/069,119 US5917608A (en) | 1996-04-30 | 1998-04-29 | Surface plasmon sensor |
| US09/069,118 US5856873A (en) | 1996-04-30 | 1998-04-29 | Ellipso sensor using a prism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14169896A JP3578187B2 (en) | 1996-06-04 | 1996-06-04 | Evanescent ellipso sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09325113A true JPH09325113A (en) | 1997-12-16 |
| JP3578187B2 JP3578187B2 (en) | 2004-10-20 |
Family
ID=15298135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14169896A Expired - Fee Related JP3578187B2 (en) | 1996-04-30 | 1996-06-04 | Evanescent ellipso sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3578187B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003074993A1 (en) * | 2002-03-06 | 2003-09-12 | Matsushita Electric Industrial Co., Ltd. | Concentration measurement device |
| WO2003078981A1 (en) * | 2002-03-19 | 2003-09-25 | Matsushita Electric Industrial Co., Ltd. | Concentration measuring instrument |
-
1996
- 1996-06-04 JP JP14169896A patent/JP3578187B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003074993A1 (en) * | 2002-03-06 | 2003-09-12 | Matsushita Electric Industrial Co., Ltd. | Concentration measurement device |
| US7110112B2 (en) | 2002-03-06 | 2006-09-19 | Matsushita Electric Industrial Co., Ltd. | Concentration measuring instrument, concentration measuring contact apparatus, concentration measuring calculating apparatus, and concentration measuring method |
| WO2003078981A1 (en) * | 2002-03-19 | 2003-09-25 | Matsushita Electric Industrial Co., Ltd. | Concentration measuring instrument |
| US7167735B2 (en) | 2002-03-19 | 2007-01-23 | Matsushita Electric Industrial Co., Ltd. | Concentration measuring instrument, and method of measuring the concentration of a specific component in a subject of measurement |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3578187B2 (en) | 2004-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0067921B1 (en) | A method for determining bioactive substances | |
| US5907408A (en) | Surface plasmon sensor | |
| US5926284A (en) | Surface plasmon sensor | |
| US7943092B2 (en) | Portable surface plasmon resonance biosensor | |
| EP1749202A1 (en) | Optical interrogation systems with reduced parasitic reflections and a method for filtering parasitic reflections | |
| JP2002357543A (en) | Analyzing element and method for analyzing sample using the same | |
| CN1963464A (en) | Total internal reflection ellipsometry imaging device and method therefor | |
| EP0321836A2 (en) | Improved reflectance photometer | |
| US4799796A (en) | Method and apparatus for measuring immunological reaction with the aid of phase-modulation of light | |
| CN107356560B (en) | Total reflection type oblique incident light reflection difference scanning imaging device and using method thereof | |
| JP3578187B2 (en) | Evanescent ellipso sensor | |
| JP2012211811A (en) | Optically measuring method and optically measuring device | |
| JPH11160199A (en) | Liquid crystal initial alignment angle measuring method and device thereof | |
| JP3693750B2 (en) | Electrophoresis sensor | |
| JPH09257701A (en) | Surface plasmon resonance sensor | |
| JP2004117048A (en) | Measuring apparatus using surface plasmon resonance and measuring substrate to be used therefor | |
| JP2002062218A (en) | Optical anisotropic substance evaluating device | |
| JP3181655B2 (en) | Optical system and sample support in ellipsometer | |
| JP2002357542A (en) | Analyzing element and method for analyzing sample using the same | |
| JP2001074649A (en) | Method for measuring angle of optical rotation, and method for inspecting urine | |
| JP2004294355A (en) | Concentration measuring instrument | |
| JP3734125B2 (en) | Microbe count measuring device | |
| JP2002357537A (en) | Method for manufacturing analyzing element and analyzing element as well as method for analyzing sample using the same | |
| WO1998002730A1 (en) | Refractometric analysis with modification of refractive index dispersion | |
| US8529837B2 (en) | System and method for detecting specific binding reactions using magnetic labels |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040706 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040706 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080723 Year of fee payment: 4 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080723 Year of fee payment: 4 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080723 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090723 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090723 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100723 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |