JPH09312543A - Surface acoustic wave element - Google Patents

Surface acoustic wave element

Info

Publication number
JPH09312543A
JPH09312543A JP8150467A JP15046796A JPH09312543A JP H09312543 A JPH09312543 A JP H09312543A JP 8150467 A JP8150467 A JP 8150467A JP 15046796 A JP15046796 A JP 15046796A JP H09312543 A JPH09312543 A JP H09312543A
Authority
JP
Japan
Prior art keywords
film
substrate
surface acoustic
acoustic wave
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8150467A
Other languages
Japanese (ja)
Inventor
Mitsuaki Kato
充明 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aisin Corp
Original Assignee
Aisin Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aisin Seiki Co Ltd filed Critical Aisin Seiki Co Ltd
Priority to JP8150467A priority Critical patent/JPH09312543A/en
Publication of JPH09312543A publication Critical patent/JPH09312543A/en
Pending legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce the propagation loss by generating a film of a silicon dioxide onto a non-piezoelectric substrate, propagating a surface acoustic wave through the film, and employing the technology to remove dirts on the non- piezoelectric substrate. SOLUTION: A silicon dioxide film 2 is produced as a dielectric material on a substrate 1 made of glass or ceramics except quartz. Interdigital electrodes 3 are placed apart on the surface of the film 2 and the electrodes 3 are covered by a zinc oxide film 4 as a piezoelectric film. Concretely the silicon oxide film 2 whose film thickness is 13.5μm is produced over the one side of the substrate 1 made of a Pylex(R) glass by the sputtering method. The interdigital electrodes 3, 3 are placed on the film 2 apart by an interval of 38.4mm, and the electrodes 3, 3 are covered with the zinc oxide film 4 whose thickness of 2μm by the sputtering method. Furthermore, aluminum-made opposed electrodes whose film thickness is 0.1μm are formed on them. Through the constitution above, the propagation loss of the silicon dioxide is smaller than that of the substrate 1 made of glass or ceramics.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、誘電体膜を構成す
る二酸化シリコンと、ガラスやセラミック金属或いはプ
ラスチックといった非圧電性膜基板とを組合せた表面弾
性波素子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device in which silicon dioxide constituting a dielectric film is combined with a non-piezoelectric film substrate such as glass, ceramic metal or plastic.

【0002】[0002]

【従来の技術】表面弾性波の伝播経路上において信号の
出入れが容易である表面弾性波素子は、テレビジョンの
中間周波数フィルタ、発振器、共振器等に利用され、特
開平5−90860号公報にみられる如く、表面弾性波
の励振を作る圧電体、電気信号を印加する圧電体上のク
シ型電極と、圧電体層より弾性波の伝播速度が大きい絶
縁層とから構成される。代表的な圧電体は、特公昭61
−35716号公報に開示される如く、シリコン(Si)
基板上に圧電性膜としての酸化亜鉛(ZnO)を形成し、酸
化亜鉛層の上に誘電体膜としての二酸化シリコン(Si
O2) とクシ型電極を配するものである。
2. Description of the Related Art A surface acoustic wave device that allows signals to easily enter and exit along a surface acoustic wave propagation path is used for an intermediate frequency filter, an oscillator, a resonator, and the like of a television, and is disclosed in Japanese Patent Laid-Open No. 5-90860. As can be seen from Fig. 3, it is composed of a piezoelectric body that excites surface acoustic waves, a comb-shaped electrode on the piezoelectric body that applies an electric signal, and an insulating layer in which the propagation speed of elastic waves is higher than that of the piezoelectric layer. A representative piezoelectric material is Japanese Patent Publication Sho 61
(Si) as disclosed in Japanese Patent Laid-Open No. 35716.
Zinc oxide (ZnO) as a piezoelectric film is formed on the substrate, and silicon dioxide (Si) as a dielectric film is formed on the zinc oxide layer.
O 2 ) and a comb-shaped electrode are arranged.

【0003】また、上記の表面弾性波素子を車両に用い
たものとして、例えば、車両のフロントガラスに用いた
ものとしては特開平4−15146号公報に示される窓
払拭装置が開示されており、車両のサイドミラーに用い
たものとしては特開平7−223512号公報に示され
る車両ミラー装置が開示されている。
A window wiping device disclosed in Japanese Patent Application Laid-Open No. 4-15146 is disclosed in which the surface acoustic wave device is used in a vehicle, for example, in a windshield of a vehicle. Japanese Patent Application Laid-Open No. 7-223512 discloses a vehicle mirror device used as a vehicle side mirror.

【0004】[0004]

【発明が解決しようとする課題】従来の特開平5−90
860号公報に示されるものは、基板上にダイヤモンド
層を設け、その上にクシ型電極を設けており、基板上に
ダイヤモンド層を設けるために高価なものとなってしま
う。特公昭61−35716号公報に示されるものは、
電子デバイスに表面弾性波を応用したものであり、IC
用基板と共通化を図ったものであり、この素子にはシリ
コン基板を用いているが、シリコン基板は一般に高価な
ものであり、コストアップにつながってしまう。一方、
表面弾性波を車両に応用したものとして、特開平4−1
5146号公報や特開平7−223512号公報が示さ
れてはいるが、この装置においてはガラス表面を表面弾
性波が伝わるため、表面弾性波を発生させる際に大きな
パワーが必要になると共に、ガラス表面を表面弾性波が
伝わるために伝播損失が大きくなってしまう。それ故
に、本発明は前述した従来技術の不具合を解消させるこ
とを解決すべき課題とする。
[Patent Document 1] Japanese Unexamined Patent Publication No. 5-90
In the device disclosed in Japanese Patent No. 860, a diamond layer is provided on a substrate, and a comb-shaped electrode is provided on the diamond layer, which is expensive because the diamond layer is provided on the substrate. What is disclosed in Japanese Patent Publication No. 61-35716 is
This is an application of surface acoustic waves to electronic devices, and IC
The device is a common substrate, and a silicon substrate is used for this element. However, the silicon substrate is generally expensive, which leads to an increase in cost. on the other hand,
As an application of surface acoustic waves to a vehicle, Japanese Laid-Open Patent Publication No. 4-1
Although Japanese Patent Laid-Open No. 5146 and Japanese Patent Application Laid-Open No. 7-223512 are disclosed, in this device, since the surface acoustic wave propagates on the glass surface, a large power is required to generate the surface acoustic wave and the glass is used. Since surface acoustic waves propagate on the surface, the propagation loss becomes large. Therefore, an object of the present invention is to solve the above-mentioned disadvantages of the related art.

【0005】[0005]

【課題を解決するための手段】本発明は、前述した課題
を解決するために、基本的には、ガラス(石英ガラスを
除く)、セラミックス、金属、プラスチック等の非圧電
性基板に設けた二酸化シリコンの膜を生成し、この二酸
化シリコン膜を介して表面弾性波を伝播させ、ガラス等
の非圧電性基板上の汚れや水滴を除去させる技術手段を
用いる。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention is basically a dioxide provided on a non-piezoelectric substrate such as glass (excluding quartz glass), ceramics, metal or plastic. A technical means of forming a silicon film, propagating surface acoustic waves through the silicon dioxide film, and removing dirt and water droplets on a non-piezoelectric substrate such as glass is used.

【0006】具体的には、本発明は、ガラス、セラミッ
クス、金属、プラスチックの何れか一つからなる基板
と、該基板上に生成された二酸化シリコン膜と、該二酸
化シリコン膜又は基板上に配した離間したクシ型電極お
よび該電極を覆う酸化亜鉛膜とからなる表面弾性波素子
を提供する。
Specifically, the present invention provides a substrate made of any one of glass, ceramics, metal, and plastic, a silicon dioxide film formed on the substrate, and a silicon dioxide film or a substrate. There is provided a surface acoustic wave device including a comb-shaped electrode separated from each other and a zinc oxide film covering the electrode.

【0007】本発明によれば、基板上に二酸化シリコン
膜を生成させ、この二酸化シリコン膜を表面弾性波の伝
達媒体として伝播損失を低減させることにより、小さな
パワーで表面弾性波を発生させる。また、基板を車両の
窓ガラスまたはミラーの表板とすることにより、雨滴等
を除去するものとして表面弾性波素子は機能する。更
に、基板はガラス、セラミックス、金属、プラスチック
のいずれかからなることから、基板よりも二酸化シリコ
ン膜の方が伝播損失が少ないものとなり、効率がより向
上する。
According to the present invention, a silicon dioxide film is formed on a substrate, and this silicon dioxide film is used as a medium for transmitting surface acoustic waves to reduce propagation loss, thereby generating surface acoustic waves with a small power. Further, the surface acoustic wave device functions to remove raindrops and the like by using the substrate as a window glass of a vehicle or a front plate of a mirror. Furthermore, since the substrate is made of glass, ceramics, metal, or plastic, the silicon dioxide film has less propagation loss than the substrate, and the efficiency is further improved.

【0008】[0008]

【発明の実施の形態】図1を参照する。表面弾性波素子
は、石英を除くガラス、セラミックス、金属プラスチッ
ク等からなる基板1上に、誘電体としての二酸化シリコ
ン膜2を生成する。二酸化シリコン膜2の表面に離間し
たクシ型電極3を配し、これを圧電性膜としての酸化亜
鉛膜4で覆った構造とする。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIG. The surface acoustic wave device produces a silicon dioxide film 2 as a dielectric on a substrate 1 made of glass other than quartz, ceramics, metal plastic, or the like. A comb-shaped electrode 3 which is spaced apart from the surface of the silicon dioxide film 2 is arranged, and this is covered with a zinc oxide film 4 as a piezoelectric film.

【0009】図2に示す例は、基板1上に離間したクシ
型電極3と酸化亜鉛膜4とを直接配し、酸化亜鉛膜4間
に二酸化シリコン膜2を充てんした構成の表面弾性波素
子である。
The example shown in FIG. 2 is a surface acoustic wave device having a structure in which a comb-shaped electrode 3 and a zinc oxide film 4 are directly arranged on a substrate 1 and a silicon dioxide film 2 is filled between the zinc oxide films 4. Is.

【0010】[0010]

【実施例1】図1に示す表面弾性波素子の実施例を述べ
る。パイレックスガラスの基板1の片面全域にスパッタ
法により膜厚13.5μmの二酸化シリコン膜2を生成し
た。この二酸化シリコン膜2の上に38.4mm離間させた
クシ型電極3、3(電極の線幅とギャップがともに15
μm、対数が114対、交叉幅が3mmのアルミ製)を配
し、該電極3、3をスパッタ法で2μmの酸化亜鉛膜
4、4で覆った。さらに、その上に膜厚0.1μmのアル
ミ製の対向電極を形成した。この実施例による表面弾性
波素子の挿入損失は24.2dBであった。
Example 1 An example of the surface acoustic wave device shown in FIG. 1 will be described. A silicon dioxide film 2 having a film thickness of 13.5 μm was formed on the entire surface of one side of the Pyrex glass substrate 1 by the sputtering method. On this silicon dioxide film 2, comb-shaped electrodes 3 and 3 spaced apart by 38.4 mm (the line width and the gap of the electrodes are both 15
μm, the number of logarithms is 114, and the cross width is 3 mm), and the electrodes 3, 3 are covered with zinc oxide films 4, 4 of 2 μm by sputtering. Further, an aluminum counter electrode having a film thickness of 0.1 μm was formed thereon. The insertion loss of the surface acoustic wave device according to this example was 24.2 dB.

【0011】[0011]

【実施例2】図2に示す表面弾性波素子の実施例を述べ
る。ホウケイ酸ガラスの基板1の上に直接38.4mm離間
させたクシ型電極3、3(電極とギャップがともに20
μm、対数が114対、交叉幅が3mmのアルミ製)とス
パッタ法による膜厚2μmの酸化亜鉛膜4、4を生成
し、酸化亜鉛膜4、4間にスパッタ法による膜厚7.2μ
mの二酸化シリコン膜2を形成した。対向電極は電極
3、3と対向させた。この実施例による表面弾性波素子
の挿入損失は28.5dBであった。
Example 2 An example of the surface acoustic wave device shown in FIG. 2 will be described. The comb-shaped electrodes 3 and 3 (both electrode and gap are 20
μm, a logarithm of 114 pairs, and a cross width of 3 mm made of aluminum) and a zinc oxide film 4 or 4 having a film thickness of 2 μm formed by the sputtering method, and a film thickness of 7.2 μ formed by the sputtering method between the zinc oxide films 4 and 4.
m silicon dioxide film 2 was formed. The counter electrode was opposed to the electrodes 3 and 3. The insertion loss of the surface acoustic wave device according to this example was 28.5 dB.

【0012】[0012]

【比較例】図1の例において、二酸化シリコン膜に代え
て酸化亜鉛膜を用いたもの(寸法は実施例1と同じ)
は、挿入損失が32.6dBを示した。
[Comparative Example] In the example of FIG. 1, a zinc oxide film is used in place of the silicon dioxide film (dimensions are the same as in Example 1).
Has an insertion loss of 32.6 dB.

【実施例3】図3に自動車に用いるサイドミラーの断面
を示す。ミラー組立体5は、表面に二酸化シリコン膜
2、裏面に反射材料であるクロム膜7を有するパイレッ
クスガラスの表板6を、ホルダー9にその周囲を支持さ
せた構成を有し、実施例1と同じ表面弾性波素子8(但
し基板を表板6とする)を表板6の縁に固定した。通電
をして表板6の水滴の除去の度合いを測定したが、表板
6の縁の一部を除いて水滴は完全に除去された。通電
は、周波数50.68MHz 、振幅20Vの高周波電圧とし
た。この場合、印加電圧により表面弾性波素子8から発
生した表面弾性波は、ミラー表面(二酸化シリコン膜表
面)に伝播される。つまり、水滴が除去される原理は、
表面弾性波のエネルギーがミラー表面に付着した水滴に
入力されると水滴は励振される。このように励振された
水滴はミラー表面に対して動こうとし、水滴が流動、飛
散又は霧化されるものであり、表面弾性波をミラーの上
側にくるように垂直状態で保持することで、表面弾性波
はミラーの上側から下側に向かって垂直方向に伝播さ
れ、水滴のミラー表面に対する動きは水滴の自重が作用
し、小さなパワーでも水滴はミラーの表面から完全に除
去されるものとなる。尚、酸化亜鉛膜の変わりに、窒化
アルミニウム、チタン酸ジルコン酸鉛等を用いることも
できる。
Third Embodiment FIG. 3 shows a cross section of a side mirror used in an automobile. The mirror assembly 5 has a structure in which a holder 9 supports a front plate 6 of Pyrex glass having a silicon dioxide film 2 on the front surface and a chromium film 7 which is a reflective material on the back surface, and its periphery is supported by the first embodiment. The same surface acoustic wave element 8 (however, the substrate is the front plate 6) was fixed to the edge of the front plate 6. Electricity was applied to measure the degree of removal of water drops on the front plate 6, but the water drops were completely removed except for a part of the edge of the front plate 6. The energization was a high frequency voltage having a frequency of 50.68 MHz and an amplitude of 20V. In this case, the surface acoustic wave generated from the surface acoustic wave element 8 by the applied voltage is propagated to the mirror surface (silicon dioxide film surface). In other words, the principle that water drops are removed is
When the energy of the surface acoustic wave is input to the water droplet attached to the mirror surface, the water droplet is excited. The water droplets thus excited tend to move with respect to the mirror surface, and the water droplets flow, scatter, or are atomized.By holding the surface acoustic waves in a vertical state so that they are above the mirror, Surface acoustic waves are propagated vertically from the upper side to the lower side of the mirror, and the movement of the water droplet on the mirror surface is affected by the weight of the water droplet, and even with a small power, the water droplet is completely removed from the mirror surface. . Instead of the zinc oxide film, aluminum nitride, lead zirconate titanate, or the like can be used.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一例の表面弾性波素子の断面図であ
る。
FIG. 1 is a cross-sectional view of a surface acoustic wave device according to an example of the present invention.

【図2】本発明の別の例の表面弾性波素子の断面図であ
る。
FIG. 2 is a sectional view of a surface acoustic wave device according to another example of the present invention.

【図3】ミラー装置の断面図である。FIG. 3 is a cross-sectional view of a mirror device.

【符号の説明】[Explanation of symbols]

1 基板 2 二酸化シリコン膜 3 電極 4 酸化亜鉛 5 サイドミラー 6 表板 8 表面弾性波素子 1 substrate 2 silicon dioxide film 3 electrode 4 zinc oxide 5 side mirror 6 front plate 8 surface acoustic wave device

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 基板上に生成され表面弾性波を伝える二
酸化シリコン膜と、該二酸化シリコン膜または前記基板
上に配設され前記表面弾性波を発生させるクシ型電極
と、該クシ型電極を覆う酸化亜鉛膜とからなる表面弾性
波素子。
1. A silicon dioxide film generated on a substrate for transmitting a surface acoustic wave, a comb-shaped electrode disposed on the silicon dioxide film or the substrate for generating the surface acoustic wave, and covering the comb-shaped electrode. A surface acoustic wave device including a zinc oxide film.
【請求項2】 基板を自動車の窓ガラス又はミラーの表
板とした請求項1記載の表面弾性波素子。
2. The surface acoustic wave device according to claim 1, wherein the substrate is a window glass of an automobile or a front plate of a mirror.
【請求項3】 前記基板は、ガラス、セラミックス、金
属、プラスチックのいずれかからなる請求項1記載の表
面弾性波素子。
3. The surface acoustic wave device according to claim 1, wherein the substrate is made of glass, ceramics, metal, or plastic.
JP8150467A 1996-05-23 1996-05-23 Surface acoustic wave element Pending JPH09312543A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8150467A JPH09312543A (en) 1996-05-23 1996-05-23 Surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8150467A JPH09312543A (en) 1996-05-23 1996-05-23 Surface acoustic wave element

Publications (1)

Publication Number Publication Date
JPH09312543A true JPH09312543A (en) 1997-12-02

Family

ID=15497561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8150467A Pending JPH09312543A (en) 1996-05-23 1996-05-23 Surface acoustic wave element

Country Status (1)

Country Link
JP (1) JPH09312543A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1158668A1 (en) * 1999-11-30 2001-11-28 TDK Corporation Surface acoustic wave device and its production-method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1158668A1 (en) * 1999-11-30 2001-11-28 TDK Corporation Surface acoustic wave device and its production-method
EP1158668A4 (en) * 1999-11-30 2005-03-02 Tdk Corp Surface acoustic wave device and its production-method

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