JPH09307056A - Semiconductor device and method of manufacturing it - Google Patents

Abstract

PROBLEM TO BE SOLVED: In the case of packaging a plurality of semiconductor chips like a card memory device, to make it possible to package a semiconductor bare-chip in high density and thin without preparing an extra via hole or metal wiring on the substrate. SOLUTION: To use a bare chip packaging technology for more than at least 2 semiconductor chips mounted on a substrate, with active side of one semiconductor chip mounted upward to the substrate surface and the active side of the other semiconductor chip mounted downward to the substrate surface alternately. The first semiconductor chip 1 is fixed on the substrate with its active side upward to the surface of the substrate and connected to the substrate by a wire bonding technology and the second semiconductor chip 1a is fixed on the substrate with its active side downward to the surface of the substrate and connected to the substrate by a flip chip technology, and this packaging method is repeatedly applied. The other combined method of packaging and connection, such as the wire bonding technology and the front side TAB technology, the reverse side TAB technology and the flip chip technology, and the front side TAB technology and the reverse side TAB technology, are sometimes used.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a plurality of identical semiconductor chips are directly mounted on a substrate and a method of manufacturing the same, and is required to be particularly thin and high in density such as card type electronic equipment. It is suitable for a semiconductor device and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, wire bonding technology, flip chip technology, and TAB technology have been adopted as bare chip mounting methods for semiconductor devices. Conventionally, in the case of bare chip mounting on the same substrate, each of these technologies has been adopted independently. In particular, restrictions on component mounting, for example, in the wire bonding technique, when the bare chip has a terminal pitch of 100 μm or less and the number of terminals is 200 or more, it becomes difficult to mount. Therefore, only the TAB technique is adopted for such bare chip mounting. It was like that.

On the other hand, in the case of mounting a plurality of bare chips which are not particularly limited in the number of terminals and the terminal pitch on the same substrate such as a memory IC, the wire bonding technique is mainly adopted in order to suppress the manufacturing cost. ing.

FIG. 2 shows an example of a board mounting diagram when a plurality of bare chips having the same pad arrangement are mounted on the board by the wire bonding technique. The first semiconductor chip 1 is fixed by an adhesive material 10 to a recess 4 formed by cutting the substrate to reduce the mounting thickness, and the pad 2 of the first semiconductor chip and the substrate terminal 6 provided on the substrate are wire-bonding technology. Are connected by the thin metal wire 5. The substrate terminal 6 is connected to the via hole 8 by the metal wiring 7 provided on the substrate. The second semiconductor chip 1a is mounted on the substrate in the same manner as the first semiconductor chip 1, and the signal of the pad 3 is connected to the via hole 8a. The respective semiconductor chips are arranged in the same direction. The via holes 8 and 8a are connected by a metal wiring 7b arranged on the back surface of the substrate or the inner layer surface. As a result, the pads 2, 2a, 2b, 2c of the first semiconductor chip 1 are respectively connected to the second semiconductor chip 1a.
Can be connected to the same pads 3, 3a, 3b, 3c.

[0005]

However, as more and more thin and high-density mounting is required in recent years, when more semiconductor chips are mounted in a limited board area and mounting thickness, If all the semiconductor chips are bare-chip mounted in the same mounting technique and in the same mounting direction as in 2, it becomes impossible to route the wiring only on the same substrate surface especially when the number of pads of the semiconductor chip increases. , It is necessary to increase the number of via holes provided in the board, and as a result, many metal wirings are also routed to the back surface of the board or the inner layer surface, which hinders high density and thinness. There is.

Therefore, the semiconductor mounting method of the present invention has been made in view of the above-mentioned problems, and an object thereof is to mount a larger number of semiconductor chips in a limited board area and board thickness. The purpose is to easily enable easy board design.

[0007]

In order to solve the above-mentioned problems, the semiconductor device of the present invention is mounted directly on the substrate so that the surface opposite to the active surface faces the mounting surface of the substrate. It is characterized by comprising a first semiconductor chip and a second semiconductor chip directly mounted on the substrate so that the active surface of the substrate faces the mounting surface of the substrate.

Further, in the above semiconductor device, the first and second semiconductor chips are made of the same semiconductor chip.

Further, in the above semiconductor device, the first semiconductor chip is connected to the substrate by a fine metal wire, and the second semiconductor chip is connected to the substrate via a bump.

Alternatively, the first semiconductor chip is connected to the substrate by a thin metal wire, and the second semiconductor chip is connected to the substrate by front TAB mounting.

Alternatively, the first semiconductor chip is connected to the substrate by back TAB mounting, and the second semiconductor chip is connected to the substrate via bumps.

Alternatively, the first semiconductor chip is connected to the substrate by back TAB mounting, and the second semiconductor chip is connected to the substrate by front TAB mounting.

Therefore, according to each of the semiconductor devices described above, when a plurality of semiconductor chips having the same pad arrangement are mounted, it is easy to form metal wiring on the same substrate layer without forming extra via holes in the substrate. Therefore, it is possible to remove extra metal wiring on the back surface or the inner layer surface of the substrate. Therefore, it is possible to easily design a thin and high-density substrate.

On the other hand, a method of manufacturing a semiconductor device of the present invention is a method of manufacturing a semiconductor device in which at least first and second identical semiconductor chips are directly mounted on a substrate, and the first semiconductor chip is an active surface. Directly mounting on the substrate so that the opposite surface faces the mounting surface of the substrate, and the second semiconductor chip directly mounts on the substrate so that the active surface faces the mounting surface of the substrate. And a step of:

Further, in the method of manufacturing a semiconductor device described above,
The first semiconductor chip is connected to the substrate by wire bonding, and the second semiconductor chip is connected by flip chip mounting.

Further, in the method of manufacturing a semiconductor device described above,
The first semiconductor chip is connected to the substrate by wire bonding, and the second semiconductor chip is connected to the substrate by table TAB mounting.

Further, the first semiconductor chip is mounted by the wire bonding and resin-sealed, and then flip-chip mounting or front TAB mounting is performed.

According to the above-mentioned mounting method, the resin sealing step at a high temperature, which is necessary for the wire bonding mounting, is performed first, so that the soldering quality of the flip chip mounting and the table TAB mounting performed thereafter is affected. Can be done without giving.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1A is a diagram for explaining an embodiment of a semiconductor device according to the present invention and is a schematic view. Reference numeral 1 is a first semiconductor chip and 1a is a second semiconductor chip, which are the same semiconductor chip. The first semiconductor chip 1 has an active surface fixed in the same direction (upward) as the mounting surface of the substrate by an adhesive 10 in a recess 4 formed by cutting the substrate in order to reduce the mounting thickness of the substrate, while the second semiconductor chip 1a is formed. Indicates that the active surface faces the mounting surface of the board (downward)
Fixed to. In this embodiment, the pad 2 of the first semiconductor chip 1 and the substrate terminal 6 provided on the substrate are connected by the metal thin wire 5 by the wire bonding technique as shown in FIG. The substrate terminal 6 is connected to the metal wiring 7 provided on the substrate. In addition, the second semiconductor chip 1a is formed on the pad 3 by the flip chip technique as shown in FIG.
It is connected to the substrate terminal 6 via the bump 12 formed above. The substrate terminal 6 is connected to the metal wiring 7. As a result, the pads 2, 2a, 2b of the first semiconductor chip 1,
2c and the same pad 3, 3a, 3 of the second semiconductor chip 1a
The metal wirings 7 for connecting b and 3c do not have to be formed in multiple layers by using via holes in the substrate, and the metal wirings 7 can be formed on the same surface (layer) of the substrate, which is a thin semiconductor device. Is possible.

Further, FIG. 1B is a diagram for explaining another embodiment of the semiconductor device according to the present invention, and is schematically shown. Similarly to the above, the first semiconductor chip 1 is mounted on the substrate with the active surface upward by the wire bonding technique. Similarly to the above, the second semiconductor chip 1a is also mounted by the flip chip technique at the same pad as the first semiconductor chip 1 at a position facing each other. As a result, the same pads of the first semiconductor chip 1 and the second semiconductor chip 1a use the thin substrate without forming extra via holes or metal wiring on the substrate due to the metal wiring 7 wired on the substrate. It is possible to connect each pad with the shortest distance.

An example of a method of manufacturing the above semiconductor device will be shown below.

First, the first semiconductor chip 1 is fixed in the recess 4 of the substrate with the adhesive 10 in the same direction as the mounting surface of the substrate, and then the pad 2 and the substrate terminal 6 are connected by the metal wire 5 by the wire bonding technique. . After that, the thermosetting resin 11 is used for 2 to 4 at a high temperature of 100 ° C to 150 ° C.
The first semiconductor chip 1 and the thin metal wires 5, which are thermally cured for a time,
The board terminal 6 is sealed. Next, the second semiconductor chip 1a is connected to the substrate terminal 6 by the flip-chip technique with the active surface facing the substrate mounting surface via the bumps 12 formed on the pads 3.

As another embodiment, for example, the above-mentioned first
The semiconductor chip 1 is mounted by the wire bonding technique, and the second semiconductor chip 1a is mounted on the table T as shown in FIG.
Implemented with AB technology. Here, the table TAB is defined as a table TAB in which the TAB substrate 14 is bonded so that the TAB substrate 14 is on the side opposite to the chip active surface when the TAB leads 13 are collectively bonded to the chip. By adopting such a structure, the same pads of both semiconductor chips can be easily connected without providing an extra via hole or metal wiring on the substrate. As a manufacturing method in this case, first, the first semiconductor chip 1 is mounted on a substrate by a wire bonding technique according to the above procedure, and then sealed with resin. Next, the second semiconductor chip 1a mounted by the table TAB technique is placed on the substrate with the active surface facing the substrate mounting surface, and the leads 13 are soldered to the substrate terminals 6.

Further, for example, the above-mentioned first semiconductor chip 1 is mounted by the back TAB technique as shown in FIG. 5, and the above-mentioned second semiconductor chip 1a is mounted by the flip-chip technique. Here, the back TAB is defined as the back TAB when the TAB lead 13 is bonded to the chip at a time so that the TAB substrate 14 is bonded to the lead 13 on the chip active surface side. By adopting such a structure,
It is possible to easily connect the same pads of both semiconductor chips to each other without providing an extra via hole or metal wiring on the substrate.

As another example, for example, by mounting the first semiconductor chip 1 described above by the front TAB technique and mounting the second semiconductor chip 1a by the back TAB technique, an extra via hole or The same pads of both semiconductor chips can be easily connected without providing metal wiring. As the manufacturing method in this case, first, the back TA
The first semiconductor chip 1 mounted by the B technology is placed on the substrate with the active surface in the same direction as the substrate mounting surface, and the leads 13 are connected to the substrate terminals 6 by soldering. Next, the second semiconductor chip 1a mounted by the table TAB technique is placed on the substrate with the active surface facing the substrate mounting surface, and the leads 13 are soldered to the substrate terminals 6. The mounting procedure can be reversed.

Although the respective embodiments have been described above, it is most preferable to use the semiconductor device of this embodiment for a semiconductor device in which a plurality of identical semiconductor chips are mounted on a substrate, such as a card-shaped memory device. Is.

[0027]

According to the semiconductor device of the present invention, since it is possible to design a substrate without providing an extra via hole or metal wiring on the substrate, a high-density and thin semiconductor chip can be mounted.

[Brief description of drawings]

FIG. 1 is a schematic view of substrate wiring of a first embodiment of a semiconductor device according to the present invention.

FIG. 2 is a schematic diagram of substrate wiring in a conventional semiconductor device.

FIG. 3 is a schematic cross-sectional view of mounting on a substrate by a wire bonding technique.

FIG. 4 is a schematic cross-sectional view of substrate mounting by flip chip technology.

FIG. 5 is a schematic cross-sectional view of mounting on a substrate by a back TAB technique.

FIG. 6 is a schematic cross-sectional view of board mounting according to the table TAB technique.

[Explanation of symbols]

 1 1st semiconductor chip 1a 2nd semiconductor chip 2, 2a, 2b, 2c 1st semiconductor chip pad 3, 3a, 3b, 3c 2nd semiconductor chip pad 4 substrate recess 5, 5a metal thin wire 6 substrate terminal 7, 7a, 7b Metal wiring 8, 8a Via hole 9 Substrate 10 Adhesive material 11 Resin 12 Bump 13 Lead 14 TAB base material 15 Solder

Claims (10)

[Claims] 1. A substrate, a first semiconductor chip directly mounted on the substrate so that a surface opposite to the active surface faces the mounting surface of the substrate, and an active surface faces the mounting surface of the substrate. And a second semiconductor chip directly mounted on the substrate so as to provide a semiconductor device. 2. The semiconductor device according to claim 1, wherein the first and second semiconductor chips are made of the same semiconductor chip. 3. The first semiconductor chip is connected to the substrate by a thin metal wire, and the second semiconductor chip is connected to the substrate via a bump. The semiconductor device described. 4. The first semiconductor chip is connected to the substrate by a fine metal wire, and the second semiconductor chip is connected to the substrate by front-side TAB mounting. 2. The semiconductor device according to 2. 5. The first semiconductor chip is connected to the substrate by back TAB mounting, and the second semiconductor chip is connected to the substrate via bumps. 2. The semiconductor device according to 2. 6. The first semiconductor chip is connected to the substrate by back TAB mounting, and the second semiconductor chip is connected to the substrate by front TAB mounting. Alternatively, the semiconductor device according to item 2. 7. A method of manufacturing a semiconductor device in which at least first and second identical semiconductor chips are directly mounted on a substrate, wherein the first semiconductor chip has a surface opposite to an active surface mounted on the substrate. Mounting directly on the substrate so as to face the surface, and mounting the second semiconductor chip directly on the substrate so that the active surface faces the mounting surface of the substrate. A method of manufacturing a semiconductor device, comprising: 8. The semiconductor device according to claim 7, wherein the first semiconductor chip is connected to the substrate by wire bonding, and the second semiconductor chip is connected by flip chip mounting. Manufacturing method. 9. The method according to claim 7, wherein the first semiconductor chip is connected to the substrate by wire bonding, and the second semiconductor chip is connected to the substrate by table TAB mounting. Of manufacturing a semiconductor device of. 10. The semiconductor device according to claim 8, wherein the first semiconductor chip is mounted by the wire bonding and resin-sealed, and then flip-chip mounting or table TAB mounting is performed. How to implement.