JPH09306876A - Method and apparatus for forming optically assisted pattern - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a pattern having a fineness below the light diffraction limit. SOLUTION: An optical fiber 10 has a double substrate composed of a core 11 and clad 12. The core center is a hollow 13. The three-dimensional position of the optical fiber 10 is controlled by control of a voltage applied to a piezoelectric element 15. A chamber 20 is connected to the other end of the fiber 10. A laser light source 25 controllable by a laser controller 26 is disposed outside the chamber 20. The optical output from the laser light source 25 is collected by a lens 24 and applied to one end of the fiber 10. The incident light 14 generates an evanescent light wave 18 at the top end of the fiber 10. An etching gas or deposition material gas is fed from a gas store bomb 21 into the chamber 20 and transported via the hollow part of the fiber 10 to the top end to react at a substrate 16.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a light-assisted pattern for forming a fine pattern having a size smaller than a diffraction limit of light, which is used for forming a semiconductor structure having a very small size such as a quantum effect semiconductor device. The present invention relates to an optically assisted pattern forming apparatus for realizing the above.

[0002]

2. Description of the Related Art Conventionally, the following method is generally used for forming a pattern on a semiconductor substrate. First, a resist mainly made of an organic material is applied onto a semiconductor substrate by a spin coating method or the like. The resist is irradiated with a controlled energy beam in a desired pattern to induce a chemical change in the resist to form a latent image of the pattern. This chemical change causes a difference in the solubility of the resist in the developing solution in the subsequent developing process. When the part irradiated with the energy ray is easily dissolved, it is called “positive type”, and when the part is opposite, it is called “negative type”. Development is performed utilizing this difference in solubility to form a resist pattern. By performing etching such as wet etching or dry etching using the resist pattern as a mask, the substrate is processed to form a pattern. Here, as the energy rays to be irradiated, electromagnetic waves such as ultraviolet rays and X-rays transmitted through a mask in which a desired pattern shape is recorded in advance and reduced by a lens system, or scannable particle beams such as electron beams and ion beams are used. Used. The minimum dimension (processing accuracy) of a semiconductor pattern that can be formed by this method is mainly determined by the photosensitive dimension accuracy of the resist, and is on the order of submicrons.

[0003] Apart from the above methods, as a method of forming a pattern on a semiconductor substrate, a beam is formed by directly irradiating the substrate with an energy beam focused in an etching gas or source gas atmosphere. There is an assist direct drawing method. As the energy beam to be irradiated, a focused laser beam, a focused electron beam, an ion beam, or another particle beam is used. The minimum dimension (processing accuracy) of a semiconductor pattern that can be formed by this method is about the light wavelength that is the convergence limit of light due to diffraction when a laser beam is used. On the other hand, when a particle beam is used, the size that can be focused can be considerably reduced as compared with the case of using a laser beam.
Focusing to the order of 00 Å is possible. However, in the direct drawing method using particle beams,
In order to maintain the particle beam source, it is necessary to perform the process under a high vacuum, so that the pressure of the etching gas or the deposition source gas cannot be increased, and the throughput of the process becomes extremely low.

[0004] A method using an evanescent light wave has been devised to overcome the convergence limit of light due to diffraction, which is a cause of limiting processing accuracy in a direct drawing method using a laser beam, and the method has been experimentally effective in recent years. Sex has been confirmed. Such a technique is called a near-field optical effect technique. For example, a comprehensive report entitled "Photon Scanning Tunneling Microscope Technology" is provided by Otsu in Applied Physics, Vol. 65, pp. 2-12 (1996).
An evanescent wave is a wave that does not propagate, and is localized in the region from the vicinity of the material surface to about the light wavelength. The tip of the optical fiber is processed so as to have a size sufficiently smaller than the light wavelength, and an evanescent light wave generated on the sample surface is detected at the tip of the optical fiber (collection).
(referred to as mode: C mode) by detecting scattered light and light emission when the surface of the sample is irradiated with an evanescent light wave generated at the tip of the optical fiber.
Lumination mode (referred to as I-mode)), which makes it possible to observe a fine surface structure of the sample surface with a resolution exceeding the limit of the light spot.

[0005] By applying the near-field optical effect technique to the pattern direct drawing technique using laser light, the convergence limit of light due to diffraction at the time of pattern formation can be overcome.
Japanese Patent Application Laid-Open No. 7-106229 discloses an example in which a near-field optical effect technique is applied to a lithography process. In this example, it has been proposed to irradiate a resist with an evanescent light wave generated at the tip of an optical fiber whose tip is thinned to perform a resist exposure step with a resolution exceeding the diffraction limit of light. In the resist exposure step, since the light-sensitive resist material is fixed on the substrate surface, it is possible to effectively use local light irradiation by the near-field optical effect technology.

[0006]

As described above, the near-field optical effect is effective in locally irradiating light. However, in the etching or thin film deposition by the laser beam direct writing method, an etching gas or a deposition gas is used. Since the raw material gas is supplied from the gaseous phase, even if a chemical reaction process due to laser beam irradiation occurs locally, the processing dimension is expanded due to the random thermal motion of the gas. The extent of this spread is about the mean free path of the gas, but in order to make it smaller, it is necessary to add a buffer gas, etc., to raise the gas pressure considerably or to keep the device at a low temperature. In general, it has been difficult to achieve a processing accuracy of submicron or less by a laser beam direct writing method. In order to fully bring out the effect of the near-field optical effect technique, it is necessary to suppress the random thermal motion of gas.

Therefore, the problem to be solved by the present invention is:
In performing the etching or thin film deposition by the laser beam direct writing method as described above, it is possible to apply the near-field optical effect technology while overcoming the problem of random thermal motion of gas, thereby focusing light by diffraction. An object of the present invention is to make it possible to manufacture a fine pattern structure having dimensional accuracy exceeding a limit.

[0008]

According to the present invention, there is provided a method for forming an optically assisted pattern according to the present invention, which irradiates a desired position on a substrate with an evanescent light wave and simultaneously focuses an etching gas flow or a light beam on the evanescent light wave irradiation position. The method is characterized in that a focused deposition material gas stream is irradiated to cause etching or film deposition at the evanescent light wave irradiation position. And, preferably, in the above-mentioned optical assist pattern forming method, the end portion of the hollow optical fiber is made to face the substrate, the light is incident and propagated from the other end of the optical fiber, and the evanescent light wave generated at the end portion of the optical fiber is generated. The irradiation is performed on the substrate, and at the same time, the etching gas or the deposition source gas is transported to the irradiation part of the evanescent light wave through the inside of the hollow optical fiber.

According to another aspect of the present invention, there is provided an optically-assisted pattern forming apparatus, comprising: a light source means for generating light; and a hollow optical fiber for transmitting light and generating an evanescent light wave of the propagated light at its tip. A means for introducing light generated by the light source means into the hollow optical fiber, a means for introducing an etching gas or a deposition source gas into a hollow portion of the hollow optical fiber, and a substrate to be processed near a tip of the hollow optical fiber. It is characterized by comprising substrate holding means for holding, and position control means for controlling a relative position between the tip of the hollow optical fiber and the substrate. Preferably, the apparatus further includes a light source control means for controlling the intensity of light generated by the light source means and / or a gas control means for controlling on / off of a gas introduced into the hollow optical fiber. A plurality of the hollow optical fibers are arranged two-dimensionally and periodically. Further, the light source means includes a light source having a wavelength range capable of photochemically decomposing the etching gas or the deposition source gas, and a light source having a wavelength longer than the resonance absorption wavelength of the etching gas or the deposition source gas. It is configured to be able to generate. Further, a temperature control mechanism for controlling the temperature of the hollow optical fiber so as to be higher than the substrate is provided.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a sectional view of an essential part for explaining an embodiment of the present invention. In the embodiment of the present invention, an optical fiber including a hollow core 1 and a clad 2 is used. As described above, it is possible to irradiate the substrate with an evanescent light wave generated from the tip of the optical fiber processed to a size smaller than the size of the light wavelength,
This makes it possible to irradiate a local region with light beyond the diffraction limit of light. If an etching gas or deposition source gas is added to this, etching and thin film deposition can be performed.
In particular, it is necessary to suppress the thermal motion of the optical fiber in the radial direction. In the embodiment of the present invention, in order to solve this, a hollow optical fiber is used as the optical fiber, and the etching gas and the deposition material gas are concentrically transported to the optical fiber using the hollow portion of the hollow optical fiber, and the presence of the evanescent light wave A method of supplying gas only to the vicinity of the optical fiber tip is adopted.

The tip of the core 1 is finely processed by a method such as selective chemical etching and is exposed to the air. Although not shown, an Au coat is applied to the outer surface of the core horn-shaped core. The refractive index of the core 1 is larger than the refractive index of the clad 2, and the incident light 4 propagates in the core while being totally reflected. At this time,
If the refractive index of the cladding 2 is small and the diameter of the hollow portion is not too large, the spatial distribution of the intensity of the incident light in the optical fiber becomes the distribution in which the intensity is maximum at the center of the optical fiber as shown in 7. An evanescent light wave 8 is generated in the interface region between the core 1 and the clad 2. The refractive index of the core 1 is larger than the refractive index (〜1) of air, and an evanescent light wave 8 is also generated at the tip of the optical fiber as shown in FIG. An etching gas or deposition source gas 5 required for the etching or thin film deposition process is transported to the tip of the optical fiber through the hollow portion 3 of the optical fiber coaxially with the propagation of the incident light 4. Here, when the substrate 6 is brought closer to the tip of the optical fiber to a distance shorter than the wavelength of the incident light 4, the evanescent light wave 8 is irradiated onto the substrate 6, and the etching gas or the deposition source gas causes a photoreaction. Causing etching or thin film deposition. When the radius of curvature of the tip of the core 1 is very small, the light irradiation area is about the size of the radius of curvature of the tip of the core 1 (the radius of curvature here is connected to the tip of the core by a smooth curve). The radius of curvature of a virtual spherical surface that covers the hollow portion 3 to be formed.)

Therefore, the radius of curvature of the tip is made smaller and the surface of the core 1 and the surface of the substrate 6 are made closer to each other, so that the spread of the irradiation area can be made extremely smaller than the wavelength of the incident light 4. The dimensions of the light irradiation area can be at most 0.1 μm or less. According to this method, the gas is locally and selectively supplied to the light irradiation region, and the velocity vector of the supplied gas becomes somewhat close to a beam aligned in the optical fiber axial direction to a certain extent, so that the heat in the radial direction of the optical fiber is A desirable gas supply with reduced movement is possible. Therefore, the pattern processing dimension is unlikely to expand due to the thermal motion of the gas, and a fine pattern can be processed by a synergistic effect with the effect of local light irradiation by the near-field effect.

Further, when light having a wavelength longer than the resonance absorption wavelength of the etching gas or the deposition source gas is coaxially propagated to the hollow optical fiber, the gas molecules have a large light intensity due to the dipole force, that is, the central axis of the optical fiber. Attracted to nearby. This is, in principle, made possible by the group of Russia's Letkov and others in Optics Communications, Vol. 98, pp. 77-79 (Optic).
s comm. vol. 98 pp. 77-79 (19
93)), and by Ren et al. In Physical Review Letters, Vol. 75, pages 3253-3.
Page 256 (Phys. Rev. Lett. Vol. 7)
5, pp. 3253-3256 (1995)). By utilizing this effect, the etching gas and the deposition source gas can be efficiently transported into the hollow optical fiber. Further, the gas molecules are attracted to a portion of the light irradiation area on the substrate where the light intensity is high, so that a finer pattern can be processed.

[0014]

Next, embodiments of the present invention will be described with reference to the drawings. [First Embodiment] FIG. 2 is a schematic structural view showing a first embodiment of an optically assisted pattern forming apparatus according to the present invention.
The optical fiber 10 has a double structure of a core 11 and a clad 12, and a central portion of the core is a hollow portion 13. The diameter of the clad 12 is 50 μm, the diameter of the core 11 is 10 μm, and the diameter of the hollow portion 13 is 0.1 μm or less. The core 11 is made of a mixture of silicon dioxide and germanium dioxide, and the cladding 12 is made of fluorine-doped silicon dioxide.

One end of the optical fiber 10 is processed by wet etching using a mixed solution of ammonium fluoride and hydrofluoric acid. At this time, the etching rate varies depending on the difference in the amount of germanium dioxide contained in each of the core 11 and the clad 12, and the clad 12 is etched faster than the core 11,
A shape in which the tip of the core 11 becomes thinner is obtained. By controlling the concentration ratio of the mixed solution and the etching time, the radius of curvature at the tip can be controlled. In this embodiment, the radius of curvature is set to be 0.1 μm or less. In the method of manufacturing the tip of the optical fiber used in this example, one end of a hollow optical fiber having a uniform outer diameter was sharpened by selective wet etching. On the other hand, if the hollow optical fiber is processed in advance into a horn-shaped shape as one end of the hollow optical fiber approaches the tip by flame processing, etc., the hollow part also becomes thinner toward the tip, so the above The diameter of the hollow portion 13 after the same selective wet etching can be reduced to about 0.01 μm. The optical fiber 10 is connected to the piezo element 15, and has a mechanism capable of controlling the horizontal and vertical three-dimensional positions of the optical fiber 10 with high accuracy by controlling the voltage applied to the piezo element 15. Optical fiber 1
A chamber 20 having a window 23 is connected to the other end of the zero.

Outside the chamber 20, for example, a wavelength 40
Laser light source 25 made of 0 nm GaN-based semiconductor laser
Is arranged. The laser light source 25 is the laser control device 2
6 to control the laser output intensity, on / off, and the like. The light output from the laser light source 25 is collected by the lens 24, introduced through the window 23 into one end of the optical fiber 10 in the chamber 20,
Incident light 14 is supplied. The incident light 14 propagates to the tip of the optical fiber 10 which has been thinly processed while totally reflecting inside the core 11. An evanescent light wave 18 is generated at the tip of the optical fiber 10.

An etching gas or a deposition source gas is introduced into the chamber 20 from a gas storage cylinder 21 through a gas flow control valve 22, and the gas is transported from one end of the optical fiber 10 through the hollow portion of the optical fiber to the tip. In the present embodiment, chlorine gas,
W (CO) ₆ gas was used as a deposition source gas. On the other hand, a substrate 16 to be processed is placed on the stage 17. Here, the substrate 16 is a group IV semiconductor such as silicon or germanium or a compound semiconductor such as gallium arsenide,
A dielectric such as silicon dioxide or sapphire, or a laminate thereof can be used. In this example, a gallium arsenide substrate was used.

The stage 17 can mechanically move its position three-dimensionally, thereby coarsely adjusting the positional relationship between the substrate 16 and the tip of the core 11. Stage 17, piezo element 15, gas flow control valve 22, laser controller 2
6 are electrically connected to a control device 19, and each is organically controlled by the control device 19. The stage 17 is coarsely adjusted in advance so that the distance between the tip of the core 11 and the surface of the substrate 16 is 3 μm, and the tip of the core 11 is made to approach the substrate 16 by applying a voltage to the piezo element 15. The intensity of the evanescent light wave 18 changes greatly depending on the distance from the tip of the core 11. Here, the distance between the tip and the substrate surface is reduced to a distance of 10 nm.

The control device 19 gives a command to the laser control device 26 to supply the incident light 14 from the laser light source 25 to the optical fiber 10 and generate an evanescent light wave at the tip of the core 11. Next, a command is given from the control device 19 to the gas flow control valve 22 to introduce the etching gas or the deposition source gas into the chamber 20. Gas is optical fiber 1
The light is conveyed to the tip of the core 11 through the hollow portion 13 and radiated onto the substrate 16. Then, a photochemical reaction occurs on the substrate. The spread of the light irradiation region and the gas supply region is about the radius of curvature of the core tip, and is 0.1 μm or less. By controlling the piezo element 15 or the stage 17, the substrate 16 can be etched in a pattern or a thin film can be formed on the substrate 16. In this embodiment, the width is about 10 nm.
It was confirmed that the pattern described above could be formed. As described above, by using the method and the apparatus of this embodiment, it is possible to directly produce a fine pattern exceeding the diffraction limit of light on a substrate. The dimension of the pattern can be controlled by adjusting the distance between the tip of the core 11 and the surface of the substrate.

In the above embodiment, the incident light 14 is GaN
Example using light from a near-ultraviolet laser
Needless to say, the light is not limited to this, and any light having a wavelength that propagates through the optical fiber 10 and causes a reaction with the gas may be used. Although the above embodiment has been described on the assumption that the substrate 16 is flat, if the substrate 16 includes a step, a piezo element 1 is provided by installing a mechanism for detecting the step.
5 may be driven to control the height of the optical fiber 10.

[Second Embodiment] FIG. 3 is a schematic structural view showing a second embodiment of the optically assisted pattern forming apparatus according to the present invention. In this embodiment, the processing speed is improved by arranging a plurality of optical fibers two-dimensionally with periodicity. The present invention can be used for the purpose of producing a fine device such as a quantum effect semiconductor device regularly and regularly arranged with periodicity. The plurality of optical fibers 31 are regularly aligned and bundled so that the positions of the optical fibers are two-dimensionally periodic and connected to the piezo element 32. In this embodiment, about 10,000 optical fibers 31 are arranged such that each optical fiber 31 is located at the apex of a square having a side of 100 nm. The other configuration of this embodiment is the same as that of the first embodiment shown in FIG. 2, and each optical fiber used in this embodiment is also the first embodiment.
It is machined in the same shape as that of the embodiment.

The other end of the optical fiber 31 is connected to a chamber 37 having a window 40. Chamber 37
A laser light source 42 made of, for example, a GaN-based semiconductor laser having a wavelength of 400 nm is disposed outside the laser light source. The laser light source 42 is connected to a laser control device 43, which controls the laser output intensity and on / off. The light output from the laser light source 42 is condensed by a lens 41, introduced through a window 40 to one end of a bundle of optical fibers 31 in a chamber 37, and supplied with incident light 33. The incident light 33 is an optical fiber 3 whose tip is thinned.
1 where the evanescent light wave is generated. An etching gas or a deposition source gas is introduced into the chamber 37 from a gas storage cylinder 38 through a gas flow control valve 39, and the gas is transported from one end of each optical fiber 31 through the hollow portion of the optical fiber to the tip end. A substrate 34 to be processed is placed on the stage 35. The position of the stage 35 can be mechanically moved three-dimensionally, whereby the positional relationship between the substrate 34 and the tip of the optical fiber 31 is roughly adjusted. Stage 3
5, the piezo element 32, the gas flow control valve 39, and the laser controller 43 are organically controlled by the controller 36.
The stage 35 is roughly adjusted so that the distance between the tip of the bundle of optical fibers 31 and the surface of the substrate 34 is 3 μm in advance, and a voltage is applied to the piezo element 32 so that the tip of the tip of the bundle of optical fibers 31 and the substrate 34 10 between surfaces
approach to a distance of nm.

The control device 36 gives a command to the laser control device 43 to supply the incident light 33 from the laser light source 42 to the optical fiber 31 and generate an evanescent light wave at the tip of the optical fiber 31. Next, a command is given from the control device 36 to the gas flow control valve 39 to introduce the etching gas or the deposition source gas into the chamber 37. The gas is transported to the distal end of each optical fiber 31 through the hollow portion of each optical fiber 31 and released onto the substrate. The spread of the light irradiation region and the gas supply region is about the radius of curvature of the core tip, and is 0.1 μm or less. In this embodiment, a dimension of about 10 nm is formed in a region of about 1 μm square in one processing step.
It was confirmed that the above disk-shaped pattern could be periodically formed at intervals of 100 nm. As described above, by using the method and the apparatus of this embodiment, a large number of fine patterns exceeding the diffraction limit of regularly arranged light can be directly formed on a substrate in one processing step. Such a process is useful for producing a regularly arranged quantum effect device required for an electron interference device or the like with a high throughput.

[Third and Fourth Embodiments] In the third and fourth embodiments of the present invention, the laser light source 2 shown in FIGS.
5, 42, a GaN-based near-ultraviolet semiconductor laser which is a light source in a wavelength range capable of photochemically decomposing the etching gas or the deposition source gas, and a ZnSe-based blue semiconductor which is a light source having a wavelength longer than the resonance absorption wavelength of the etching gas or the deposition source gas. An apparatus having two laser light sources and configured so that output light from both light sources can be combined by a mirror or the like and taken out coaxially is used. As a result, as described above, the etching gas or the deposition source gas is efficiently transported by the dipole force caused by the light having a wavelength longer than the resonance absorption wavelength, and the gas is concentrated in the evanescent light wave irradiation region to be further processed. High-precision pattern processing becomes possible.

[Fifth Embodiment] FIG. 4 is a sectional view showing a main part of a fifth embodiment of the optically assisted pattern forming apparatus according to the present invention. In the first to fourth embodiments, particularly when a thin film is deposited, depending on the relationship between the deposition source gas and the wavelength of light for photodecomposing the gas, the gas species chemically decomposed in the hollow portion of the optical fiber may be formed on the hollow inner wall. Deposition cannot be ignored,
Smooth transport of the source gas in the hollow may be hindered. The present embodiment addresses this point.
As shown in FIG. 4, the optical fiber is provided with a fine heater 50 for heating the optical fiber, and a stage 51 with a substrate cooling mechanism for cooling the substrate is used as a stage on which the substrate 6 is mounted. . This promotes the desorption of the active species of the deposition source gas that has undergone the photochemical reaction on the hollow inner wall, and suppresses the deposition on the hollow inner wall.
Absorption and deposition are promoted above, and effective thin film deposition occurs.

As described above, as an embodiment of the present invention, when a GaN-based near-ultraviolet semiconductor laser is used as a light source, a gallium arsenide substrate is subjected to optically assisted etching using chlorine gas, and a W (CO) ₆ gas is deposited on a gallium arsenide substrate. Although the case where a tungsten microstructure is used to deposit a light-assisted thin film using the method described above, the method of the present invention is not limited to the above light source, substrate, etching gas and deposition source gas.

[0027]

As described above, the method and apparatus for forming an optically assisted pattern of the present invention irradiate an evanescent light wave onto a substrate and simultaneously irradiate a focused reaction gas flow to the irradiation position. ADVANTAGE OF THE INVENTION According to this invention, the area | region where a photoreaction occurs can be limited and the fine pattern structure below the diffraction limit of light can be formed efficiently.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a main part for describing an embodiment of the present invention.

FIG. 2 is a first view of an optically assisted pattern forming apparatus according to the present invention;
It is a schematic block diagram for demonstrating 3rd Example.

FIG. 3 shows a second example of the optically assisted pattern forming apparatus of the present invention.
FIG. 14 is a schematic configuration diagram for explaining Example 4 of the present invention.

FIG. 4 is a sectional view of a main part for describing a fifth embodiment of the present invention.

[Explanation of symbols]

 1, 11 Core 2, 12 Clad 3, 13 Hollow 4, 14, 33 Incident light 5 Etching gas or deposition material gas 6, 16, 34 Substrate 7 Intensity distribution of incident light 8, 18 Evanescent light wave 10, 31 Optical fiber 15, 32 Piezo element 16 Substrate 17, 35 Stage 19, 36 Controller 20, 37 Chamber 21, 38 Gas storage cylinder 22, 39 Gas flow control valve 23, 40 Window 24, 41 Lens 25, 42 Laser light source 26, 43 Laser Control device 50 Micro heater 51 Stage with substrate cooling mechanism

Claims (9)

[Claims] 1. A desired position on a substrate is irradiated with an evanescent light wave, and at the same time, an evanescent light wave irradiation position is irradiated with a focused etching gas flow or a focused deposition source gas flow to cause etching or film deposition at the evanescent light wave irradiation position. A method for forming an optically assisted pattern, which comprises: 2. The method for forming an optically assisted pattern according to claim 1, wherein the pattern formation is performed while moving the irradiation position of the evanescent light wave on the substrate. 3. The hollow optical fiber end portions are made to face each other on the substrate so that light is incident and propagated from the other end of the optical fiber to irradiate the substrate with an evanescent light wave generated at the end portion of the optical fiber, and at the same time, the hollow portion The method for forming an optically assisted pattern according to claim 1, wherein the etching gas or the deposition source gas is transported to the evanescent light wave irradiation section through the inside of the optical fiber. 4. A light source means for generating light, a hollow optical fiber for propagating the light and generating an evanescent light wave of the propagating light at its tip, and a means for introducing the light generated by the light source means into the hollow optical fiber. A means for introducing an etching gas or a deposition source gas into the hollow portion of the hollow optical fiber, a substrate holding means for holding and holding a substrate to be processed in the vicinity of the tip portion of the hollow optical fiber, a tip portion of the hollow optical fiber and the An optical assist pattern forming apparatus comprising: a position control unit that controls a relative position of a substrate. 5. A light source control means for controlling the intensity of light generated by the light source means and / or a gas control means for controlling on / off of gas introduced into the hollow optical fiber. The optically assisted pattern forming device according to claim 4. 6. The light-assisted pattern forming apparatus according to claim 4, wherein the hollow portion of the hollow optical fiber is gradually narrowed toward the tip. 7. The light-assisted pattern forming apparatus according to claim 4, wherein a plurality of the hollow optical fibers are arranged two-dimensionally with periodicity. 8. The light source means includes a light source in a wavelength range capable of photochemically decomposing the etching gas or the deposition source gas, and a light source having a wavelength longer than the resonance absorption wavelength of the etching gas or the deposition source gas. 5. The light-assisted pattern forming device according to claim 4, wherein the light is simultaneously incident on the core of the hollow optical fiber. 9. The light assist pattern according to claim 4, further comprising temperature control means for controlling the temperatures of the hollow optical fiber and the substrate so that the temperature of the hollow optical fiber is higher than that of the substrate. Forming equipment.