JPH09305931A - Magnetoresistance effect type element, magneto-resistance effect type head and manufacture of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accurately regulate a narrow track in the shape corresponding to narrow gap in a shield type MR head. SOLUTION: A pair of leads 17 are provided to supply a sense current in the upper side of MR film having a magnetic field response portion which will become a reproducing track TR. The end portions of the magnetic field response portion are respectively provided with a multi-stage tapered portion located in the side of the MR film 15 and having at least a first tapered portion 17a having a sharp angle θ for the surface of MR film 15 and a second tapered portion 17b having a mild angle ϕ for the surface of the MR film 15. The MR film 15 is held by the lower and upper magnetic shield layers 13, 19 arranged respectively via the lower side and upper side reproducing magnetic gap films 14, 18.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element, and more particularly to a shield type magnetoresistive effect head used as a reproducing head of a magnetic disk device and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, with the increase in density of magnetic recording, a magnetoresistive effect (hereinafter referred to as MR) is used in which the electric resistance of a certain kind of magnetic thin film or magnetic multilayer thin film changes with an external magnetic field. The magnetic head (MR head) has attracted attention as a reproducing head in a high recording density system. Therefore, a shield type MR as a reproducing head in which magnetic shield layers are arranged above and below a magnetoresistive film (MR film)
Development of a magnetic recording / reproducing head for a hard disk, for example, in which a head and an inductive recording head are combined is under development.

When a shield type MR head and an induction type recording head are used in combination, a shield type MR head is usually formed on a substrate because of the underlying flatness required for the MR head and process reasons. It is common to stack an inductive recording head on top. From the viewpoint of S / N, the track width (T _R ) of the reproducing head composed of the shield type MR head is equal to the track width (T _R ) of the inductive recording head.
Structures narrower than _W ) are commonly used.

FIG. 15 is a sectional view showing the structure of a conventional magnetic recording / reproducing head in which a shield type MR head and an inductive recording head are combined. Al ₂ O ₃ · Ti with alumina
On the lower shield layer 2 made of CoZrNb amorphous alloy or the like formed on the C substrate 1 or the like, for example, a film thickness 1
An MR film 4 is formed via a lower reproducing magnetic gap film 3 made of an alumina (α-Al ₂ O ₃ ) film having a thickness of about 50 nm. The MR film 4 is patterned in a stripe shape, for example, and a pair of leads 5 are connected and formed at both ends thereof. An upper magnetic shield layer 7 is formed on the MR film 4 and the lead 5 via an upper reproducing magnetic gap film 6, and these constitute a shield type MR head A as a reproducing head.

The upper magnetic shield layer 7 of the above-mentioned shield type MR head A also serves as the lower recording magnetic pole of the induction type recording head, and the recording magnetic layer made of, for example, an alumina film having a film thickness of about 200 nm is formed on the upper magnetic shield layer 7. The gap film 8 is formed. Although not shown, a recording coil is formed on the rear side. An upper recording magnetic pole 9 is formed on the recording magnetic gap film 8, and an inductive recording head B is constituted by these.

In the shield type MR head 8 of the magnetic recording / reproducing head described above, the pair of leads 5 generally defines the magnetic field response portion of the MR film 4, and the distance between the pair of leads 5 is a reproducing track ( T _R ). In this case, the lead 5 that supplies the sense current to the MR film 4 is
It is composed of a good conductor film or the like with a thickness of about 100 to 300 nm, and the lift-off method or ion milling method is used for its formation (patterning). On the other hand, a portion of the upper recording magnetic pole 9 that faces the lower recording magnetic pole 7 with the recording magnetic gap film 8 therebetween serves as a recording track (T _W ).

The increase in recording density of the magnetic recording / reproducing head is achieved by narrowing the track and narrowing the gap. For example, in order to achieve a high recording density of 3 Gbpsi, the shield type MR head 8 as described above requires a track width of about 1 μm and a gap of about 0.1 μm. In order to achieve such a narrow track, it is necessary to accurately pattern the leads 5 in contact with the surface of the MR film 4 at narrow intervals. Further, in order to achieve the narrow gap, it is necessary to secure the insulation between the lead 5 and the upper magnetic shield layer 7 with the thin upper reproducing magnetic gap film 6, so that the gap film 6 having good step coverage is formed. In order to facilitate the operation, it is common to provide a gentle forward taper on the end of the lead 5 on the magnetic field response portion side.

However, in the case of the lead 5 having the above-mentioned gentle forward taper, it is difficult to accurately define the width of the reproducing track (T _R ) when the track is narrowed as a problem caused by its shape. In addition, there is a problem derived from a forming method such as a lift-off method or an ion milling method. That is, when the lead 5 made of Cu or the like is patterned by the lift-off method, it is difficult to deal with a narrow track or a narrow gap.

There are several reasons for this. First of all, the resist used for lift-off has a low resolution. That is, for the resist used in the lift-off method, it is necessary to make it difficult for the film formed on the resist to wrap around the side wall of the resist in order to facilitate lift-off, and a reverse taper resist is often used.

However, the resolution of the inverse taper resist is so poor at present that it is impossible to form a pattern of several microns. Another reason is that the film lifted off when the resist is dissolved causes particle contamination. In a narrow gap head, this causes dielectric breakdown.

On the other hand, when the lead 5 having a gentle forward taper is formed by the ion milling method, a resist having a taper equivalent to the taper shape of the lead 5 at the end is used and the ion beam is obliquely incident on the substrate. Then, lead patterning is performed. The taper of the resist is transferred to the lead 5 during lead patterning.

At this time, after forming a resist along the lead shape, it is necessary to bake at a relatively high temperature in order to impart a taper to the end portion of the resist. Interfacial diffusion occurs in the spin valve laminated film to reduce the resistance change rate,
Further, when removing the resist, an alkaline chemical must be used for the high temperature bake resist, which causes a problem that the MR film is corroded.

If the shape of the lead end portion is not a gentle taper, insulation failure between the lead and shield layers is likely to occur, and the current center is near the center of the magnetic field response portion and the end portion. Since and are different in the thickness direction, the magnetization direction at the center of the magnetic field response portion and the magnetization direction at the end portions are different. As a result, even if the optimum magnetic arrangement is designed in the center of the magnetic field responsive portion, there is a problem that the vicinity of the lead is destroyed from the optimum magnetic arrangement.

[0014]

As described above, in the conventional shield type MR head, there is a limit in narrowing the track and narrowing the gap, and it is becoming difficult to achieve a higher recording density. is there. Further, it is very difficult for the conventional lift-off method and the ion milling method to satisfy both the desired taper shape and the desired lead interval.

From the above, the conventional shield type M
In the R head, the shape corresponding to the narrow gap,
The challenge is to be able to accurately define narrow tracks. Further, it is an object to prevent the deviation of the current center between the vicinity of the center and the end of the magnetic field responsive portion with a shape corresponding to the narrowing of the gap.

The present invention has been made in order to solve such a problem, and is of a shield type which makes it possible to accurately and easily form a narrow gap and a narrow track structure corresponding to a higher recording density. It is intended to provide a magnetoresistive head.

[0017]

The present invention provides a first magnetic shield layer; a first magnetic gap layer disposed on the first magnetic shield layer; and a first magnetic gap layer on the first magnetic gap layer. A magnetoresistive effect film having a formed magnetic field response portion; a pair of magnetic bias layers arranged to apply a magnetic bias to the magnetoresistive effect film; a sense current applied to the magnetoresistive effect film A pair of leads arranged; a second magnetic gap layer arranged so as to cover the laminated body of the magnetoresistive film, the magnetic bias layer and the lead; a second magnetic gap layer formed on the second magnetic gap layer A second magnetic shield layer, and a first taper portion having an angle θ with respect to the surface of the magnetoresistive film at the end portions of the pair of leads on the magnetic field response portion side; Provided continuously from the taper part A magnetoresistive head, wherein a multistage tapered portion and a second tapered portion having an angle phi (where theta> phi) are respectively provided with respect to the magnetoresistive film surface.

That is, the magnetoresistive head of the present invention is
A magnetoresistive effect film having a magnetic field response portion, a pair of leads arranged above the magnetoresistive effect film and supplying a current to the magnetoresistive effect film, and the magnetoresistive effect film through the magnetic gap film, respectively. In a magnetoresistive effect head having upper and lower magnetic shield layers arranged so as to be sandwiched, in the end portions of the pair of leads on the side of the magnetic field response portion, provided on the magnetoresistive effect film side, A first taper portion having a steep angle with respect to the surface of the magnetoresistive film and a second taper provided continuously from the first taper portion and having a gentle angle with respect to the surface of the magnetoresistive film. It is characterized in that each of the multi-stage tapered portions having at least the tapered portions is provided.

In the magnetoresistive head of the present invention,
Since the lead interval can be accurately defined by the first taper portion having a steep angle with respect to the surface of the magnetoresistive effect film provided at the end of the lead on the magnetic field response portion side, the track width with a narrow track can be reproduced with good reproducibility. Easy to get. In addition, the second taper portion having a gentle angle makes it possible to sufficiently secure the insulation between the lead and the upper magnetic shield layer with a thinner gap film. As a result, it is possible to achieve a narrower track and a narrower gap without causing insulation failure between the lead and shield layers.

The magnetic bias layer (magnetic hard layer or antiferromagnetic film) can be located on the surface opposite to the main surface of the magnetoresistive film on which the leads are formed, or the same main surface. It may be formed on the surface side.

When they are arranged on different surfaces, it is preferable that the lead spacing is narrower than the magnetic bias layer spacing in order to accurately define the magnetic response portion with the lead spacing. When they are formed on the same surface, the laminated body of the lead layer and the magnetic bias layer functions as a lead.

In that case, the structure is as follows: a first magnetic shield layer; a first magnetic gap layer arranged on the first magnetic shield layer; a magnetic field formed on the first magnetic gap layer. A magnetoresistive film having a response portion; a pair of magnetic bias layers arranged to apply a magnetic bias to the magnetoresistive film; a pair arranged to apply a sense current to the magnetoresistive film A second magnetic gap layer disposed so as to cover the stacked body of the magnetoresistive film, the magnetic bias layer and the lead; and a second magnetic layer formed on the second magnetic gap layer. A shield layer is provided, and the lead layer and the magnetic bias layer are laminated to form a pair of leads, and an end portion of the leads on the magnetic field response portion side is provided with respect to the surface of the magnetoresistive film. Has an angle θ A multi-step taper portion having at least a first taper portion and a second taper portion which is provided continuously from the first taper portion and has an angle φ (where θ> φ) with respect to the surface of the magnetoresistive effect film. Are provided respectively.

In this case, the magnetic field response portion can be defined by the magnetic bias layer, in which case the lead spacing is set wider than the magnetic bias layer spacing. When a stacked body of a magnetic bias layer and a lead layer is used, for example, the first taper portion may be formed in the magnetic bias layer and the second taper portion may be formed in the lead layer. in this case,
In order to prevent the detection magnetic field from entering from a region other than the magnetic field response region, the lead layer is preferably in contact with the magnetoresistive film only through the magnetic bias layer.

Whichever configuration is adopted, the angle θ is preferably 45 to 90 degrees, and the angle φ is preferably 10 to 60 degrees. Such a change in the inclined surface can be realized by combining anisotropic etching and isotropic etching. That is, the first tapered portion can be formed by an anisotropic etching surface, and the second tapered portion can be formed by an isotropic etching member.

[0025]

Embodiments of the present invention will be described below. FIG. 1 is a cross-sectional view of the configuration of a shield type magnetoresistive effect head (MR head) according to an embodiment of the present invention viewed from the medium facing surface. In the figure,
Reference numeral 11 denotes a substrate made of an Al ₂ O ₃ .TiC substrate (hereinafter referred to as an Altic substrate) or the like.
Is provided as a base layer.

A lower magnetic shield layer (first magnetic shield layer) 13 made of a soft magnetic material such as NiFe alloy or CoZrNb amorphous alloy and having a thickness of about 1 to 2 μm is formed on the insulating underlayer 12. There is. On this lower magnetic shield layer 13, a magnetoresistive effect film (MR) is formed through a lower reproducing magnetic gap film (first magnetic gap film) 14 made of a non-magnetic insulating material such as alumina and having a thickness of about 150 nm.
The film) 15 is formed.

As the MR film 15, for example, an anisotropic magnetoresistive film made of Ni ₈₀ Fe _20, whose electric resistance changes depending on the direction of the current and the angle formed by the magnetization moment of the magnetic layer, is used. it can.

It is also possible to use a so-called giant magnetoresistive film which has a laminated structure of a ferromagnetic film and a non-magnetic conductive film and whose electric resistance changes depending on the angle formed by the magnetization of each magnetic layer. . For example, Co ₉₀ Fe ₁₀ / Cu showing a spin valve effect with substantially no magnetic coupling between adjacent magnetic layers.
An example is a spin valve film made of a / Co ₉₀ Fe ₁₀ laminated film or the like (JP-A-6-325934, etc.), or an artificial lattice film having antiferromagnetic coupling between adjacent magnetic layers.

Examples of the ferromagnetic material forming such a giant magnetoresistive film include metals containing at least one of Ni, Fe and Co. NiFe alloy, CoFe
Alloy (e.g., _{Co 100-x Fe x: 5} ≦ x ≦ 40), Ni
Examples include CoFe alloys. It goes without saying that the elements of these alloys may contain other elements. The film thickness is about 1 to 20 nm.

As the non-magnetic conductor, Cu, Ag,
Pt, Pd, Ru, Rh, Ir, CuPd alloy, CuA
Examples include u alloys and CuPt alloys. The thickness is about 0.5 to 20 nm.

The MR film 15 is formed such that its stripe direction is substantially parallel to the medium facing surface. Between the lower reproducing magnetic gap film 14 and the MR film 15, CoPt for applying a magnetic bias to the MR film 15 is provided.
Bias magnetic field applying layer 16, 16 made of a hard magnetic film and the antiferromagnetic film or the like film or the like, are arranged on the outside of the magnetic field response portion or reproducing track T _R of the MR film 15. Also on the MR film 15, the MR film 15 are formed a pair of leads 17 consisting of conductor film supplying a sense current to, a substantial reproduction track T _R of the MR film 15 by the pair of leads 17 The width is specified. That is, the magnetic field response portion of the MR film 15 described above is defined by the distance between the pair of leads 17.

Above the MR film 15 and the pair of leads 17, an upper reproducing magnetic gap film (second magnetic gap film) 18 made of a non-magnetic insulating material similar to the lower reproducing magnetic gap film 14 is interposed, An upper magnetic shield layer (second magnetic shield layer) 19 made of a soft magnetic material similar to the side magnetic shield layer 13 is formed, and a shield type MR head 20 is constituted by these. A magnetic recording / reproducing head can be constructed by forming an induction type recording head on the upper side of the shield type MR head 20 as in the case of FIG. In this case, the upper magnetic shield layer 19 also serves as the lower recording magnetic pole of the inductive recording head.

At the end portions of the pair of leads 17 on the magnetic field response portion side, as shown in the enlarged view of the essential portion of FIG.
The first taper portion 17a having a steep angle θ provided on the fifth side and the second taper portion 17b having a gentle angle φ continuously provided from the first taper portion 17a.
And a multi-stage taper portion composed of and. That is, the end surface forming the first taper portion 17a has an MR
The MR film 15 is formed at a steep angle θ with respect to the surface of the film 15, while the end face forming the second taper portion 17b is
It is formed at a gentle angle φ with respect to the surface.

Here, the second taper portion 17b has an angle φ.
Is smooth with respect to the surface of the MR film 15, as shown in FIG.
It may be a straight surface as shown in FIG. 2 or a curved surface. Also, the second taper portion 17b
It is also possible to adopt a multi-stage tapered structure or the like. Then, these first and second tapered portions 1
The end portion of the lead 17 on the magnetic field response portion side is formed by the multi-step taper portion in which 7a and 17b are continuously formed.

In the lead 17 having the multi-step taper portion at the end portion on the magnetic field response portion side (hereinafter referred to as multi-step taper lead) 17, the width of the reproducing track T _R is equal to that of the MR film 1.
5 surface is defined by the first taper portion 17a having a steep angle θ close to vertical. Therefore, the width of the reproduction track T _R having a narrowed track of 1 to 2 μm or less can be strictly defined with good reproducibility.

On the other hand, the insulation between the lead 17 and the upper magnetic shield layer 19 by the thin upper reproducing magnetic gap film 18 can be sufficiently secured by the second taper portion 17b having the gentle angle φ. Thus, by forming a multi-stage tapered portion on the magnetic field response portion side end portion of the lead 17, on which aimed to respond to narrower gap, accurately defining the narrow track to the width of the reproducing track T _R It becomes possible to do.

The angle θ of the first taper portion 17a, in order to precisely define the width of the narrow track reproduction track T _R, preferably in the range of 45 to 90 degrees. On the other hand, the second
The angle φ of the taper portion 17b of is in order to obtain good step coverage with the thin upper read magnetic gap film 18.
In other words, in order to prevent insulation failure between the lead 17 and the upper magnetic shield layer 19, it is preferable that the range be 10 to 60 degrees. The angles θ and φ described above are set so as to satisfy the relationship of θ> φ.

Further, the thickness t ₁ of the lead 17 portion corresponding to the first taper portion 17a is as follows, where R _{A is} the sheet resistance of this thickness t ₁ portion and R _MR is the sheet resistance of the MR film 15. It is preferable to set R _A <R _MR . For example, a sheet resistance R _MR of about 10Ω / square
When forming the lead 17 having a resistivity of 10 μΩ · cm on the film 15, the thickness t ₁ of the lead 17 portion corresponding to the first taper portion 17a is larger than 10 nm which satisfies the relationship of R _A <R _MR. Preferably.

Thus, the thickness t of the first taper portion 17a is
By defining _1, since a small part than the sheet resistance of the MR film 15 on the sheet resistance value of the tapered portion of the multi-stage tapered lead 17 is no longer present, the width of the effective reproducing track T _R is wider than the lead 17 intervals There is no such thing. Therefore, it is possible to control the width of the reproducing track T _R more accurately.

Further, within the range satisfying the above relationship,
By making the thickness t ₁ of the lead 17 portion corresponding to the first taper portion 17a as thin as possible, it is possible to prevent the deviation of the current center in the film thickness direction between the vicinity of the center and the end of the magnetic field response portion. The thickness t _{2 of the} portion of the lead 17 corresponding to the second tapered portion 17b may be appropriately set so that the conductivity required for the lead 17 can be obtained. t ₂ / t ₁ is larger is preferable from the viewpoint of the step coverage improvement gap film.

The multi-stage tapered lead 17 as described above
Can be formed, for example, as follows. A method of forming a multi-step taper portion on the end portion of the lead 17 on the magnetic field response portion side will be described with reference to FIG.

That is, a good conductor film 17 'which will become the lead 17 is formed on the MR film 15, and an etching mask 21 is formed on the good conductor film 17' along the plane shape of the lead 17 (FIG. 3-).
a). Next, in order to form the second tapered portion 17b having a gentle angle φ, first, for example, a method in which the etching proceeds isotropically so as to cause an undercut on the lower surface side of the etching mask 21 (isotropic etching )
Then, the good conductor film 17 'is etched. Good conductor film 17 '
Isotropically etched to form a second taper portion 1 having a gentle angle φ, as shown in FIG. 3 (b).
7b is formed.

As a method for carrying out the above-mentioned isotropic etching, chemical dry etching (CDE) using reactive plasma and the like can be mentioned. If the etching rate can be controlled and a narrow pattern can be dealt with, wet etching can be applied. Note that taper etching such as ion milling or focused ion beam etching is not always excluded, and it can be adopted as long as mask manufacturing conditions and etching conditions can be determined.

Next, the portion of the good conductor film 17 'left by the above isotropic etching is etched by a method capable of anisotropic etching to form a steep angle .theta.
While forming the first tapered portion 17a having
5 Surface is exposed (Fig. 3-c). At this time, it is preferable to suppress overmilling as much as possible. As a method for performing anisotropic etching, reactive ion etching (R
IE). In addition, as an etching method for obtaining an anisotropic shape, ion milling, focused ion beam etching (FIB), or the like can be given. However,
Since these methods are physical etching, they are inferior in material selectivity as compared with RIE which also has a chemical etching effect, and it is desirable to minimize overmilling to the MR film 15. It is preferably applied.

After that, the etching mask 21 is peeled off to obtain the multi-step tapered lead 17 having the multi-step tapered portion at the end portion on the magnetic field response portion side (FIG. 3D). As the etching mask 21, one mask may be used as both the isotropic etching mask and the anisotropic etching mask, or the mask used after the isotropic etching may be peeled off or the isotropic etching mask may be used. 17 lead again on the mask
Anisotropic etching may be performed by forming an etching mask that can precisely define the interval. However, when the mask for both isotropic etching and anisotropic etching is used as a mask, a condition is selected in which the etching mask does not recede as much as possible during the isotropic etching and an undercut is generated on the lower surface of the mask. From the viewpoint of simplifying the etching process,
It is desirable to finish the lead patterning with one mask.

The specific material of the etching mask 21 is not particularly limited, and various materials such as resist, carbon, silicon oxide, aluminum oxide, silicon nitride and aluminum nitride can be used. When a silicon oxide film other than the resist is used, for example, a good conductor film 17 'to be the lead 17 and a silicon oxide film are continuously formed on the MR film 15, and then a resist having a desired lead shape is formed. First, the silicon oxide film is patterned using the as a mask. Then, the good conductor film 17 'is patterned using the patterned silicon oxide film as a mask.

If the film thickness of the silicon oxide film is set so that the silicon oxide film used as the mask disappears at the same time when the lead patterning is completed, the upper reproducing magnetic gap film 18 is immediately formed after the lead patterning is completed. Film formation can be started. According to this, since the number of times the MR film 15 is exposed to the wet process can be reduced,
It becomes easy to use an antiferromagnetic film such as an FeMn alloy having poor corrosion resistance.

The material of the multi-stage tapered lead 17 is not particularly limited, and may be made of a single metal or an alloy containing a plurality of elements. Specific lead materials include Μo, W, Τa, Cu, Αl, N
b, Τi, Αu, Ρt, Cr, Co, etc., or MoT
Examples thereof include alloys and compounds such as a alloy and MoW alloy. Further, the multi-stage tapered lead 17 may be formed by laminating a plurality of different materials. In the case where the multi-stage tapered lead 17 is formed of the laminated film as described above, for example, a material film that is isotropically easy to etch is formed on the upper side and a material film that is anisotropically easy to etch is formed on the MR film 15 side. It is preferably formed.

When a laminated film is used for the multi-stage tapered lead 17 and lead patterning is performed by CDE and RIE, when compared with a single layer, the film having a slower CDE etching rate is sequentially formed on the MR film 15. It is preferable to form a laminate. In this way, the etching mask 21
Since the film nearer to 2 has a higher CDE etching rate, an undercut is likely to occur on the lower surface of the etching mask 21, and a gentle taper angle φ of, for example, 45 degrees or less is easily given. The same applies when other etching methods are applied.

Next, the shield type MR of the above-mentioned embodiment
A specific method of manufacturing the head 20 will be described. First, the first manufacturing method will be described with reference to FIG. That is, first, the alumina insulating film 12 having a thickness of about 10 μm is formed as a base film on the AlTiC substrate 11. The steps up to this point are omitted in FIG. The same applies to the drawings showing the following embodiments. This alumina insulating base film 1
On the substrate 2, a Co.sub.NrNb amorphous alloy film having a thickness of about 1.5 .mu.m is formed as the lower magnetic shield layer 13 on the substrate 2, for example, by a sputtering method.

Next, after forming an alumina film having a thickness of about 150 nm as the lower reproducing magnetic gap film 14, a thickness of 20 nm is obtained.
A hard magnetic film such as a CoPt film is formed and patterned by, for example, ion milling to form the bias magnetic field applying films 16 and 16 having a predetermined shape. Next, the MR film 15 is formed and patterned, and a Mo film is formed thereon with a thickness of 100 nm as a good conductor film 17 'constituting the leads 17. Then, a resist 22 is formed along the plane shape of the lead 17 as an etching mask on the Mo film (FIG. 4).
-A).

Next, the Mo film is isotropically etched to a predetermined depth by CDE using a mixed gas of CF ₄ and O ₂ to form the second taper portion 17b. Then, CF ₄ and O ₂ are removed using the remaining resist 22 as a mask.
The remaining portion of the Mo film is anisotropically etched by RIE using a mixed gas of and to form the first tapered portion 17a, and the multi-step tapered lead 17 is obtained (FIG. 4B).

After removing the resist 22, a thickness of 1 is formed on the MR film 15 and the pair of leads 17 which will be the magnetic field response portion.
A shield type MR head 20 is completed by forming an alumina film having a thickness of about 50 nm as the upper reproducing magnetic gap film 18 and further forming a CoErNb amorphous alloy film having a thickness of about 1.5 μm as the upper magnetic shield layer 19 (FIG. 4). -C).

When a recording / reproducing integrated magnetic head is used, an induction coil may be formed as a recording head on the shield type magnetoresistive effect element (FIG. 4-d). The upper shield of the MR element may also serve as the lower magnetic pole of the recording head.

The surface of the upper magnetic shield layer 19 is flattened by, for example, etching to form a recording gap film of alumina or the like. Next, a coil (not shown) is formed, and the upper magnetic pole 31 is formed on the recording gap. Generally S / N
From the viewpoint of the ratio, the recording track width TW is the reproduction track width TR.
Set wider.

Further, the lower magnetic pole may be formed by providing a convex portion on the upper magnetic shield layer at a position facing the upper magnetic pole (FIG. 4-e). In this case, the upper and lower magnetic poles and the recording gap film can be formed in the trench.

Examples of the lead material that can be processed in the above-mentioned manufacturing process include W, Τa, Nb, MoTa alloy, MoW alloy and the like. By using a similar resist as a mask and combining CDE using CF ₄ gas and ion milling, for example, a multi-step tapered lead 17 made of a MoW alloy film or another good conductor can be obtained.

Next, the second manufacturing method will be described with reference to FIG. First, in the same manner as in the manufacturing process example described above,
Formation of alumina insulating base film 12, lower magnetic shield layer 1
3, the lower reproducing magnetic gap film 14 is formed, the hard magnetic film is formed and patterned to form the bias magnetic field applying films 16 and 16, and the MR film 15 is formed and patterned. A W film having a thickness of 200 nm is formed thereon as a good conductor film 17 'constituting the leads 17, and an alumina film 23 having a thickness of about 300 nm used as an etching mask is further formed. Then, a resist 22 is formed on the alumina film 23 along the plane shape of the leads 17 (FIG. 5A).

Next, the alumina film 23 is RIE (CF ₄ , Cl ₂ , BCl ₃ or A) using the resist 22 as a mask.
Then, patterning is performed using a gas containing r) to form an etching mask for the good conductor film 17 '. Then, using the patterned alumina film 23 as a mask, first, the W film is etched to a predetermined depth by taper etching by ion milling to form the second taper portion 17b. Subsequently, the remaining portion of the W film is anisotropically etched by RIE using a mixed gas of CF ₄ and O ₂ with the alumina film 23 as a mask to form a first tapered portion 17a, and a multi-step taper is formed. The lead 17 is obtained (FIG. 5-b).

Alumina film 23 as an etching mask
After peeling off, the upper reproducing magnetic gap film 18 and the upper magnetic shield layer 19 are sequentially formed in the same manner as in the above-described manufacturing process example, whereby the shield type MR head 20 is obtained. Further, if the film thickness is set so that the alumina mask disappears when the lead patterning is finished, the gap film 18 can be formed immediately after the lead patterning is finished.

Next, the third manufacturing method will be described with reference to FIG. First, in the same manner as in the above-described manufacturing process examples, the alumina insulating base film 12, the lower magnetic shield layer 13, the lower reproducing magnetic gap film 14, the hard magnetic film, and the bias by patterning are formed. The magnetic field imparting films 16 and 16 are formed, and the MR film 15 is formed and patterned. A Ta film having a thickness of 240 nm is formed thereon as a good conductor film 17 'constituting the lead 17, and further a first resist 22a is formed along the planar shape of the lead 17 (FIG. 6-a). The first resist 22a is
Since it is used only as a mask for CDE, strict shape accuracy is not always required.
It may be one that retreats at the time of.

Then, using the first resist 22a as a mask, the Ta film is isotropically etched to a predetermined depth by CDE to form a second taper portion 17b (FIG. 6-).
b). Then, a second resist 22b having the same shape as the first resist 22a is formed again (FIG. 6-c), and this second resist 22b is used as a mask by RIE using a mixed gas of CF ₄ and O _2. The remaining portion of the Ta film is anisotropically etched to form the first taper portion 17a. Then, the resist is peeled off to obtain the multi-stage tapered lead 17 (FIG. 6-
d). Thereafter, similarly to each of the above-described manufacturing process examples, the upper read magnetic gap film 18 and the upper magnetic shield layer 19 are sequentially formed, whereby the shield type MR head 20 is formed.
Get. In addition, illustration of these processes was abbreviate | omitted in FIG.

Next, referring to FIG. 7, a two-layer laminated film (24a
A manufacturing method in the case of using a good conductor film made of / 24b) for the lead 17 will be described. First, in the same manner as in each of the manufacturing process examples described above, formation of the alumina insulating base film 12, formation of the lower magnetic shield layer 13, and lower reproduction magnetic gap film 1 are performed.
4, the hard magnetic film is formed and patterned to form the bias magnetic field applying films 16 and 16, and the MR film 15 is formed and patterned. First, an Al film having a thickness of 30 mm is formed as the first good conductor film 24a, and a Mo film having a thickness of 130 nm is continuously formed as a second good conductor film 24b. On this, a resist 22 is formed along the planar shape of the lead 17 (FIG. 7A).

Next, using the resist 22 as a mask, C
The second taper portion 17b is formed by isotropically etching the Mo film 24b by CDE using F ₄ gas (FIG. 7-
b). Then, using the remaining resist 22 as a mask, C
The Al film 24a is anisotropically etched by the l-based gas RIE to form the first tapered portion 17a (FIG. 7C).

After removing the resist 22, the upper reproducing magnetic gap film 18 and the upper magnetic shield layer 19 are sequentially formed in the same manner as in the above-described manufacturing process examples.
A shield type MR head 20 is obtained.

As the lead composed of the two-layer laminated film (24a / 24b) which can be processed in the above-mentioned manufacturing process, Al /
W, Al / Nb, Al / Ti, Al / Ρt, Al / Μo
W, Al / ToTa, Al / MoSi ₂ , Al / WS
i ₂ , Α / ΤSi ₂ , Cr / Mo, Cr / W, C
r / Nb, Cr / Ti, Cr / Pt, Cr / MoW, C
r / MoΤa, Cr / MoSi ₂ , Cr / WSi ₂
, Cr / ΤaSi ₂ , Au / Mo, Au / W, Au
/ Nb, Au / Τi, Au / Pt, Au / MoW, Au
/ MoTa, Au / ΜoSi ₂ , Au / WSi ₂ ,
Au / TaSi _{2 and the} like can be mentioned.

Further, a CD using the above-mentioned CF ₄ type gas
Instead of the combination of E and RIE using Cl ₂ gas, two layers are laminated under various conditions such as the combination of CDE using a mixed gas of CF ₄ + O ₂ and RIE using CF ₄ gas. The leads made of a film can be patterned.

For example, according to the combination of CDE using a mixed gas of CF ₄ + O ₂ and RIE using a CF ₄ gas, W / Μo, Nb / Mo, Τi / Mo, Τi / Nb,
Τi / W, Τi / MoTa, Τi / MoW, MoTa /
MoW, Nb / W, Τa / Μo, Ta / Nb, Τa /
Laminated films of W, Ta / Mo / α, Τa / M / oW, etc. can be processed well.

Next, referring to FIG. 8, a three-layer laminated film (25a
/ 25b / 25c) will be described below. First, in the same manner as in each of the manufacturing process examples described above, formation of the alumina insulating base film 12,
The lower magnetic shield layer 13 is formed, the lower reproducing magnetic gap film 14 is formed, the hard magnetic film is formed and patterned to form the bias magnetic field applying films 16 and 16, and the MR film 15 is formed and patterned. First, an Nb having a thickness of 80 nm is formed as a first good conductor film 25a, and then a W film having a thickness of 60 nm is formed as a second good conductor film 25b.
As the good conductor film 25c, a Mo film having a thickness of 100 nm is continuously formed. On this, a resist 22 is formed along the planar shape of the lead 17 (FIG. 8-A).

Next, using the resist 22 as a mask, CF
The second taper portion 17b is formed by isotropic etching with CDE using a mixed gas of ₄ and O ₂ to a depth of 160 nm. At this time, the CDE conditions such as the gas partial pressure ratio, the gas pressure, the substrate temperature, and the gas flow rate are set so that the etching rates are r _Nb <r _W <r _Mo (r _Nb: Nb film etching rate, r _W: W film etching rate, r _Mo: the relationship between the etching rate) of Μo film is set to Mitsurusu so. Then, the remaining resist 22
Nb remaining after RIE using CF ₄ as a mask
The film is anisotropically etched to form the first tapered portion 17a (FIG. 8-B).

After removing the resist 22, the upper reproducing magnetic gap film 18 and the upper magnetic shield layer 19 are sequentially formed in the same manner as in the above-described manufacturing process examples.
A shield type MR head 20 is obtained.

A lead made of a three-layer laminated film (25a / 25b / 25c) that can be processed in the above manufacturing process is
Ti / W / Μo, Τa / W / Mo, Τi / ΜoTa / M
oW, Τa / MoTa / ΜoW, Ti / ΜoW / MoT
a, Τa / MoW / ΜoTa, Τi / Nb / Mo, Τi
/ Nb / W and the like. Also, instead of RIE using F-based gas for anisotropic etching, RIE using Cl ₂ is applied to similarly perform Al / W / M.
o, Al / Nb / Mo, Cr / Nb / Mo, Cr / W /
Mo, Au / Nb / Mo, Au / W / Mo, Al / Mo
Ta / MoW, Cr / MoTa / MoW, Eu / MoT
It is possible to favorably form the multi-step taper portion on the end portion of the three-layer laminated film such as a / Mow.

Also, for example, when taper etching by ion milling is applied, by using a three-layer laminated film laminated in order from the MR film 15 side so that the milling rate increases in order, multi-steps on the lead end portion can be achieved. It is easy to form the tapered portion.

Next, a shield type MR head according to another embodiment of the present invention will be described with reference to FIG. In the shield type MR head 26 shown in FIG. 9, the MR film 15 is directly formed on the lower reproducing magnetic gap film 14, and the MR film 15 is patterned so as to define the width of the reproducing track T _R. Bias magnetic field applying films 16 and 16 having conductivity are formed. And FIG.
As shown in enlarged sectional view of 0, on the bias magnetic field applying layer 16 and 16, a second tapered portion having a first tapered portion 17a and the angle φ having an angle θ to the reproducing track T _R end A pair of good conductor films (multistage tapered good conductor films) 17 provided with multistage tapered portions 17b are formed.

In this way, when the bias magnetic field applying film 16 which is a conductor is formed on the MR film 15, the bias magnetic field applying film 16 and the good conductor film 17 together function as a lead. The other configurations are the same as those of the shield type MR head 20 of the above-described embodiment.

The shield type MR head 2 having such a structure
6 is effective when a spin valve film including an antiferromagnetic film 27 made of NiO or the like is used as the MR film 15, as shown in FIG. Further, in such a configuration, the bias magnetic field applying film 16 and the portion corresponding to the first tapered portion 17a of the multi-step tapered good conductor film 17 can be formed at one time, so that the track is narrowed to the order of microns. The width of the reproduction track T _R can be specified precisely and with good reproducibility.

Further, it is possible to prevent the misalignment between the bias magnetic field applying film 16 and the multi-step tapered good conductor film 17. Then, a thin upper reproducing magnetic gap film 18 is formed.
The insulation between the good conductor film 17 and the upper magnetic shield layer 19 by the second taper portion 17 having a gentle angle φ.
It can be sufficiently secured by b.

As described above, the bias magnetic field applying film 16
The when placed on the MR film 15, it is also possible to slightly retract from the reproducing track T _R end of the bias magnetic field applying layer 16 the ends of the conductor film 17, conductor even in such a case Edge of film 17 and bias magnetic field applying film 1
The distance from the end of 6 must be sufficiently short and accurately defined. According to the multi-tapered good conductor film 17, the distance between the end of the good conductor film 17 and the end of the bias magnetic field applying film 16 can be accurately defined.

When the bias magnetic field applying film 16 and the good conductor film 17 which are conductive bodies are formed on the MR film 15 and used as leads, for example, as shown in FIG. 11, the bias magnetic field applying film is applied. Good conductor film 1 from the end of the film 16
The end of 7 may be arranged on the reproduction track T _R side. In this case, the multi-stage tapered portion including a first tapered portion 17a and the second tapered portion 17b provided on the reproducing track T _R side end portion of the conductor film 17 functions similarly to the embodiment described above. Further, as shown in FIG. 12-a, with respect to the reproducing track T _R end of the laminated film of the bias magnetic field applying layer 16 and the conductor film 17, a first taper portion 17a and the second tapered portion 17b You may form the multistage taper part which consists of.

Further, as shown in FIG. 12-b, the first taper portion 17a (angle θ) is provided in the bias magnetic field applying film, and the second taper portion 17a
The tapered portion 17b (angle φ) may be provided on the good conductive film (lead layer) formed immediately above.

Further, as shown in FIG. 12-c, the first taper portion 17a (angle θ) may be provided in the bias magnetic field applying film, and the magnetic field responding section may be defined by the bias magnetic field applying film. That is, the bias magnetic field applying film is provided with a flat portion after the steep taper portion (angle θ), and the magnetoresistive effect film is designed so as to overlap with the bias magnetic field applying film at this flat portion. Then, a good conductive film (lead layer) having a gentle taper (angle φ) in a portion which is not in contact with the magnetoresistive film is formed. With such a configuration, it is possible to suppress the intrusion of the detected magnetic field from the region other than the magnetic field responsive portion, which is preferable from the viewpoint of S / N.

Further, in this case, since the magnetic field response portion is defined by the bias magnetic field applying film, the bias magnetic field applying film is patterned by anisotropic etching, and then the lead layer is patterned by using lift-off. I don't mind.

The shield type MR head 26 of this embodiment
The angle θ of the first taper portion 17a, the angle φ of the second taper portion 17b, the etching method, the material for forming the multi-step tapered good conductor film 17 and the like are the same as those in the above-described embodiment. The thickness t _{1 of the} portion of the good conductor film 17 corresponding to the portion 17a is the same as that of the bias magnetic field applying film 16 and the good conductor film 1.
When the sheet resistance of the laminated film with No. 7 is R _A ′ and the sheet resistance of the MR film 15 is R _MR , it is preferable to set R _A ′ <R _MR . As a result, the substantial reproduction track width does not become wider than between the ends of the bias magnetic field applying film 16 or between the ends of the good conductor film 17. Therefore,
The reproduction track width can be defined more accurately.

The multistage tapered good conductor film 17 formed on the bias magnetic field applying film 16 as described above can be obtained, for example, as follows. That is, first, in FIG.
As shown in (a), the bias magnetic field applying film 1 is formed on the MR film 15 including a spin valve film including the antiferromagnetic film 27.
A hard magnetic film 16 ′ and the like to be 6 and a good conductor film 17 are sequentially formed, and an etching mask 21 is formed thereon along the plane shape (lead shape) of the good conductor film 17.

Next, the second having a gentle angle φ
In order to form the tapered portion 17b, isotropic etching is performed so as to cause an undercut on the lower surface side of the etching mask 21, for example. Next, the portion of the good conductor film 17 left by the isotropic etching is anisotropically etched to form a first taper portion 17a having a steep angle θ that defines the interval between the good conductor films 17 to form a multi-step tapered good conductor film. 1
7 is obtained (FIG. 13-b). Subsequently, the hard magnetic film 16 'is patterned by anisotropic etching using the good conductor film 17 as a mask.

[0086] Thereafter, by peeling off the etching mask 21, playing a multistage tapered conductor film 17 having a multi-stage tapered portion on the reproducing track T _R end track T _R
And a bias magnetic field applying film 16 that defines
3-c).

[0087] According to such an etching process, alignment it is possible to precisely define the width of the reproducing track T _R on which to reduce the number of steps, and the bias magnetic field applying layer 16 and the multi-stage tapered conductor film 17 The shift can be prevented.

Next, the shield type MR of the above-mentioned embodiment
A specific method of manufacturing the head 26 will be described with reference to FIG. That is, first, the alumina insulating film 12 having a thickness of about 10 μm is formed as a base film on the AlTiC substrate 11. The steps up to this point are omitted in FIG. On the alumina insulating base film 12, a CoErNb amorphous alloy film having a thickness of about 1.5 μm is formed as the lower magnetic shield layer 13 by using, for example, a sputtering method. Then, an alumina film having a thickness of about 150 nm is formed on the lower reproducing magnetic gap film 1.
4 is formed, and then the MR film 15 is formed and patterned, and a hard magnetic film 16 'such as a CoPt film having a thickness of about 20 nm and a Mo film having a thickness of 200 nm as a good conductor film 17 are formed thereon.
The films are formed in order. Then, a resist 22 is formed as an etching mask along the lead plane shape on the Mo film (FIG. 14-a).

Next, the Mo film is isotropically etched to a predetermined depth by CDE using a mixed gas of CF ₄ and O ₂ to form the second taper portion 17b. Then, using the same resist 22 as a mask, the remaining part of the Mo film is anisotropically etched by RIE using a mixed gas of CF ₄ and O ₂ to form a first taper part 17a, and a multi-step taper is formed. A good conductor film 17 is obtained (FIG. 14-b).
Subsequently, the hard magnetic film 16 'is anisotropically etched by ion milling using the same resist 22 as a mask to obtain the bias magnetic field applying film 16 (FIG. 14-c).

After the resist 22 is peeled off, an alumina film having a thickness of about 150 nm is formed as an upper reproducing magnetic gap film 18 on the MR film 15 and a pair of good conductor films 17, and further a CoErNb amorphous film having a thickness of about 1.5 μm is formed. The shield type MR head 26 is completed by forming the upper magnetic shield layer 19 of the alloy film. The various manufacturing methods shown in the above-described embodiment can also be applied to the manufacture of the shield MR head 26 of this embodiment.

[0091]

As described above, according to the magnetoresistive head of the present invention, the narrow track can be accurately defined after the insulation between the lead and the shield is sufficiently secured by the narrow gap film. Therefore, it is possible to stably provide a shield type magnetoresistive head having a narrow gap and a narrow track structure compatible with a high recording density system.

[Brief description of drawings]

FIG. 1 is a sectional view showing a configuration of a shield type MR head according to an embodiment of the present invention.

FIG. 2 is an enlarged sectional view of a main part of the shield type MR head shown in FIG.

FIG. 3 is a cross-sectional view showing an example of a process of forming multi-step tapered leads of the shield type MR head shown in FIG.

FIG. 4 is a cross-sectional view showing an example of a manufacturing process of the shield type MR head shown in FIG.

FIG. 5 is a cross-sectional view showing another example of the manufacturing process of the shield type MR head shown in FIG.

6A and 6B are cross-sectional views showing still another example of the manufacturing process of the shield type MR head shown in FIG.

FIG. 7 is a cross-sectional view showing an example of a manufacturing process when a lead made of a double-layered film of the shield type MR head shown in FIG. 1 is used.

FIG. 8 is a cross-sectional view showing an example of a manufacturing process when a lead made of a triple stacked film of the shield type MR head shown in FIG. 1 is used.

FIG. 9 is a shield type MR according to another embodiment of the present invention.
It is a sectional view showing the composition of the head.

10 is an enlarged cross-sectional view of a main part of the shield type MR head shown in FIG.

FIG. 11 is an enlarged cross-sectional view of an essential part showing a modified example of the shield type MR head shown in FIG.

FIG. 12 is an enlarged sectional view of an essential part showing another modification of the shield type MR head shown in FIG.

FIG. 13 is a cross-sectional view showing an example of a process of forming a multi-stage tapered lead and a bias magnetic field applying film of the shield type MR head shown in FIG.

FIG. 14 is a cross-sectional view showing an example of a manufacturing process of the shield MR head shown in FIG.

FIG. 15 is a sectional view showing a configuration of a magnetic recording / reproducing head using a conventional shield type MR head.

[Explanation of symbols]

 13 ... Lower magnetic shield layer 14 ... Lower reproducing magnetic gap film 15 ... MR film 17 ... Multi-step tapered lead (multi-step tapered good conductor film) 17a ... First taper portion 17b ... Second taper portion 18: upper reproducing magnetic gap film 19: upper magnetic shield layer 20, 26: shield type MR head

Claims (15)

[Claims] 1. A first magnetic shield layer; a first magnetic gap layer disposed on the first magnetic shield layer; and a magnetic field responsive portion formed on the first magnetic gap layer. A magnetoresistive film; a pair of magnetic bias layers arranged to apply a magnetic bias to the magnetoresistive film; a pair of leads arranged to apply a sense current to the magnetoresistive film; A second magnetic gap layer disposed so as to cover the laminated body of the magnetoresistive film, the magnetic bias layer and the lead; and a second magnetic shield layer formed on the second magnetic gap layer. The end portions of the pair of leads on the side of the magnetic field response portion are provided with a first taper portion having an angle θ with respect to the surface of the magnetoresistive effect film and a portion continuously from the first taper portion. , On the surface of the magnetoresistive film To the angle phi (where theta> phi) magnetoresistive head, characterized in that the multi-stage tapered portion are respectively provided with a second tapered portion having a. 2. The magnetoresistive head according to claim 1, wherein the magnetic bias layer is located on a surface opposite to a main surface of the magnetoresistive film on which the leads are formed. 3. The magnetoresistive head according to claim 1, wherein the lead spacing is narrower than the magnetic bias layer spacing. 4. A first magnetic shield layer; a first magnetic gap layer disposed on the first magnetic shield layer; and a magnetic field responsive portion formed on the first magnetic gap layer. A magnetoresistive film; a pair of magnetic bias layers arranged to apply a magnetic bias to the magnetoresistive film; and a pair of lead layers arranged to apply a sense current to the magnetoresistive film A second magnetic gap layer arranged so as to cover the laminated body of the magnetoresistive film, the magnetic bias layer and the lead; and a second magnetic shield layer formed on the second magnetic gap layer. The lead layer and the magnetic bias layer are laminated to form a pair of leads, and an end portion of the leads on the magnetic field response portion side has an angle θ with respect to the surface of the magnetoresistive film. A first taper portion, A multi-step taper portion which is provided continuously from the first taper portion and which has at least a second taper portion having an angle φ (where θ> φ) with respect to the surface of the magnetoresistive film is provided. A magnetoresistive effect head characterized in that. 5. The magnetoresistive head according to claim 4, wherein the lead spacing is wider than the magnetic bias layer spacing. 6. The magnetoresistive head according to claim 4, wherein the first taper portion is formed in the magnetic bias layer, and the second taper portion is formed in the lead layer. 7. The magnetoresistive head according to claim 4, wherein the lead layer is in contact with the magnetoresistive film via the magnetic bias layer. 8. The magnetoresistive head according to claim 1, wherein the angle θ is 45 to 90 degrees. 9. The magnetoresistive head according to claim 1, wherein the angle φ is 10 to 60 degrees. 10. The magnetic element according to claim 1, wherein the first taper portion is formed of an anisotropic etching surface, and the second taper portion is formed of an isotropic etching film. Resistance effect head. 11. A recording / reproducing integrated head comprising a magnetoresistive effect head according to claim 1 as a reproducing head, and an induction type head as a recording head. 12. A magnetoresistive film having a magnetic field response portion;
A pair of magnetic bias layers arranged so as to apply a magnetic bias to the magnetoresistive film; and a pair of leads defining the magnetic field responsive portion in the magnetoresistive film at intervals thereof. A first taper portion having an angle θ with respect to the surface of the magnetoresistive effect film and an end portion of the lead on the magnetic field response portion side are provided continuously from the first taper portion. A magnetoresistive effect element characterized in that a multi-step taper portion having a second taper portion having an angle φ (where θ> φ) with respect to the film surface is provided. 13. A magnetoresistive film having a magnetic field response section;
A pair of leads formed by laminating a pair of magnetic bias layers arranged to apply a magnetic bias to the magnetoresistive film and a pair of lead layers for applying a sense current to the magnetoresistive film. A first taper portion having an angle θ with respect to the surface of the magnetoresistive film, and a continuous portion from the first taper portion, And a multi-step taper portion having at least a second taper portion having an angle φ (where θ> φ) with respect to the surface of the magnetoresistive film. 14. A method of manufacturing a magnetoresistive head according to claim 1, wherein a conductive film forming a lead is formed on the magnetoresistive film; a region corresponding to a magnetic response portion on the conductive film. A step of forming an etching mask having a hole in the surface; and a step of forming a second taper portion having an angle φ with respect to the surface of the magnetoresistive effect film on the conductive film by isotropic etching using the etching mask. A step of forming a first taper portion having an angle θ (where θ> φ) with respect to the surface of the magnetoresistive effect film on the conductive film by anisotropic etching using this etching mask. A method of manufacturing a characteristic magnetoresistive head. 15. A method of manufacturing a magnetoresistive head according to claim 4, wherein a step of forming a laminated film of a magnetic bias layer and a conductive layer forming a lead on the magnetoresistive effect film; A step of forming an etching mask having a hole in a region corresponding to the magnetic response portion; a second step of forming an angle φ with respect to the surface of the magnetoresistive film in the conductive film by isotropic etching using the etching mask. Forming a tapered portion; forming a first tapered portion having an angle θ (where θ> φ) with respect to the surface of the magnetoresistive film by anisotropic etching using the etching mask. A method of manufacturing a magnetoresistive effect head, comprising: