JPH09298444A - High frequency integrated circuit component, the device and communication system using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simplify and facilitate the electric connection inside and outside a glass cap by doping impurity to a semiconductor substrate inside and outside the cap glass in a high frequency integrated circuit where a surface acoustic wave element and a semiconductor substrate with an electric circuit formed thereon are covered by the cap glass board. SOLUTION: In a high frequency integrated circuit 10 where a glass cap 40 is connected to an upper part of a surface acoustic wave element 20 formed on a semiconductor substrate 11 with anode connection, an n-channel region is formed to a region of a p-channel silicon substrate to which the element 20 and a circuit at the outside of the cap are desired electrically to be connected, conductive bonding pads 41, 42 are formed on the surface and they are connected to the element 20 through wire bonding 51, 52. Moreover, conductive parts 61, 62 are provided to an n-channel region at the outside of the glass cap 40 so as to connect the element 20 to the outside circuit electrically. Thus, the surface acoustic wave element in the glass cap and the circuit at the outside are simply connected.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid high frequency integrated circuit device including a surface acoustic wave device, a high frequency integrated circuit device including the high frequency integrated circuit device, and a communication receiver and a communication system incorporating the high frequency integrated circuit device. Regarding

[0002]

2. Description of the Related Art In recent years, along with the spread of mobile communication and wireless LAN, it is required to reduce the size and cost of a high frequency device that handles signals in a high frequency region of several hundred MHz to several GHz.

Among them, the surface acoustic wave device has been widely applied as a high frequency circuit used in the fields of mobile communication, wireless LAN, etc., such as filters, resonators, convolvers, matched filters and the like. Further, instead of using the surface acoustic wave element alone, there is a demand for a high frequency integrated circuit in which an electronic circuit such as a high frequency amplifier circuit and a surface acoustic wave element are formed on a semiconductor substrate such as silicon. These high frequency integrated circuits are, for example, "Tsubouchi, IEEE Trans.Sonics.Ul".
tarason. Vol.32, No.5, p634 (1985) ”and the like.

However, the surface acoustic wave device is (1)
Since it is necessary to form a space in the area where the surface acoustic wave propagates on the element surface, and (2) it is necessary to hermetically seal in order to maintain reliability, so resin molding cannot be performed like ordinary integrated circuits. , Had to be placed in cans and ceramic type packages, which led to an increase in size and cost.

In order to solve this problem, a method of joining a glass substrate having a space above a dielectric thin film on which a surface acoustic wave device on a high frequency integrated circuit is formed by an anodic bonding method or the like is disclosed in Japanese Patent Laid-Open No. 6-268473. It is disclosed in the publication.
In this publication, a dielectric thin film on which a surface acoustic wave device is formed and a semiconductor thin film on which a high frequency amplification device is formed are formed on a silicon substrate, and at least the dielectric thin film among the dielectric thin film and the semiconductor thin film is formed. It is described that a glass substrate having a space above is bonded using anodic bonding.

[0006]

However, when the glass cap is bonded by the anodic bonding method or the like, there is a problem in the means for electrically connecting the surface acoustic wave element in the cap and the circuit outside the cap. Further, in the case of a metal cap with respect to the glass cap, a through hole is provided in the lower portion of the substrate to easily connect the inside and the outside in order to connect the circuit outside the substrate and the internal circuit element. When the surface acoustic wave device is provided inside, the manufacturing process of forming a hole in the silicon substrate itself is complicated, and it is not easy to connect the outside and the inside of the cap.

As a means for electrically connecting the surface acoustic wave element in the cap to the outside of the cap, a cap-shaped glass substrate having a space is bonded by anodic bonding, and a through hole is formed in the cap-shaped glass substrate. There is also a method of forming and electrically connecting the surface acoustic wave element to the outside through a conducting wire inside, but in this case as well, the manufacturing process is complicated and this leads to a reduction in product yield.

[0008]

According to the present invention, an electronic circuit such as a high frequency circuit and a surface acoustic wave element are formed on a semiconductor substrate such as silicon, and a glass cap having a space above the surface acoustic wave element is anodically bonded. In a high-frequency integrated circuit that is directly bonded by means such as, the means for electrically connecting the surface acoustic wave element in the cap and the circuit outside the cap is simplified.

Further, according to the present invention, in a portion where it is desired to electrically connect the surface acoustic wave element inside the cap-shaped glass substrate to a circuit outside the cap, a portion where the silicon substrate of the silicon substrate is joined to the cap-shaped glass substrate is provided. , N-type (or p-type) of a conductivity type different from that of the substrate from the surface toward the substrate thickness direction in the region extending from the inside to the outside of the cap.
(Type) region is formed.

Further, according to the present invention, a conductive bonding pad is formed on the surface of the n-type (or p-type) region inside the cap-shaped glass substrate, and the surface acoustic wave element and the pad are connected by wire bonding to form a cap. The surface acoustic wave device is electrically connected to the outside by providing a desired conductive portion also in the n-type (or p-type) region outside the glass substrate.

According to the above means of the present invention, it is possible to simplify the means for electrically connecting the surface acoustic wave element in the cap and the circuit outside the cap.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION

[First Embodiment] An embodiment of the present invention will be described below. FIG. 1 is a top view showing a part of a first embodiment of a surface acoustic wave device according to the present invention, and FIG. 2 is an AA 'cross-sectional view showing a cross section of the present invention. In the figure, 10 is an integrated circuit element, 11 is an n-type silicon semiconductor substrate, 12 and 13 are p-type silicon regions formed in a part of the n-type silicon semiconductor substrate 11, 20 is a surface acoustic wave element, and 21 is niobate. A piezoelectric substrate such as lithium, 22 and 23 are surface acoustic wave devices 20.
The piezoelectric substrate 21 for inputting and outputting electric signals to and from
Input and output electrode bonding pads formed of a conductive thin film such as Al, 30 is an electronic circuit, 40 is a cap-shaped glass substrate that covers the surface acoustic wave device 20 and is directly bonded to the silicon semiconductor substrate 11, 41 , 42 are bonding pads formed of a conductive thin film such as Al on the silicon substrate inside the cap-shaped glass 40, 51, 5
Reference numeral 2 is a bonding wire, and 61 and 62 are input terminals and output terminals formed on the silicon substrate 11 for electrically connecting the surface acoustic wave element 20 and the integrated circuit element 10 or the outside.

Here, the surface acoustic wave element 20 includes a filter, a resonator, a convolver, a matched filter, and the like, and is made of a material such as lithium niobate, lithium tantalate, or crystal, and excites or receives the surface acoustic wave. Components (not shown) such as comb-shaped electrodes for bonding, and bonding pads 22 and 23 for inputting and outputting electric signals to and from the surface acoustic wave element 20 from the outside. These pads 22 and 23 are usually made of a conductive material such as Al, and a thin film formed by a vapor deposition method, a sputtering method, a CVD method, or the like is directly formed on the surface of the piezoelectric substrate 21 by using a normal photolithography technique. To be done.

In the high frequency integrated circuit 10 of this embodiment, an example of a filter is shown as the surface acoustic wave element 20.

The surface acoustic wave element 20 is bonded to the n-type silicon substrate 11 with a conductive adhesive or the like or directly.

The cap-shaped glass 40 covering the surface acoustic wave element 20 is made of Pyrex (Honing Co. Corning #
A glass substrate such as 7740) has an inverted concave shape with a space formed therein by an etching method or the like.

Here, the cap-shaped glass 40 does not touch the bonding wires 51 and 52 of the surface acoustic wave element 20 so as to form a space above the surface acoustic wave propagation region of the surface of the surface acoustic wave element 20. It has such a shape, and is further bonded to the silicon substrate 11 by direct chemical bonding such as anodic bonding in order to maintain airtightness.

In the anodic bonding method, glass, which has a relatively close coefficient of thermal expansion, and a semiconductor material, a conductor material, or a conductor thin film are used.
This is a method of joining by applying a voltage of about several tens to several kV at a relatively low temperature of 400 ° C.

These are "G. wallis et al. Field assi
sted Glass-Metal Sealing, J.Appl.Phys., Vol.40, No.
10, pp3946-3949, 1969 ”and“ Suda et al .: Airtight sealing technology by Mallory bonding method, Tohoku University Scientific Measurement Research Report,
Vol. 33, No. 1, pp. 165-175, 1984 "
It is described in.

In the case of anodic bonding between silicon and a glass substrate, the glass substrate should be Pyrex (Corning # 7740 manufactured by HOYA) having a thermal expansion coefficient close to that of silicon.
And the like are preferred.

The region where the cap-shaped glass 40 is in contact with the silicon substrate 11 is for facilitating anodic bonding.
A conductive thin film such as Al or Ti may be formed.

In this embodiment, as shown in the sectional view of FIG. 2, the surface acoustic wave element 20 covered with the cap-shaped glass substrate 40 and the terminals 61 and 62 outside the cap-shaped glass substrate 40 are provided. The silicon substrate 11 below the convex portion where the cap-shaped glass substrate 40 covering the surface acoustic wave element 20 contacts the silicon substrate 11 for electrical connection.
The inside of the cap-shaped glass substrate 40 (on the surface acoustic wave element side) and the outside (the terminal 6) with the convex portion of the glass substrate 40 substantially at the center.
The p-type silicon region is formed over the 1 and 62 sides).

Then, inside the cap-shaped glass 40 on the silicon substrate 11 in which the p-type silicon region is formed, bonding pads 41 and 42 for inputting and outputting an electric signal to and from the surface acoustic wave element 20, and p. On the silicon substrate 11 outside the cap-shaped glass 40 in which the type silicon region is formed, terminals 61 and 62 for electrically connecting the electric circuit other than the high frequency integrated circuit element 10 and the surface acoustic wave element are provided. Has been formed.

These pads 41 and 42 and the terminal 6
1, 62 are formed by forming a conductive thin film on a silicon substrate.

Then, the bonding pads 41 and 4 for inputting and outputting electric signals to the surface acoustic wave element 20.
2, the input bonding pad 22 and the output bonding pad 23 on the surface acoustic wave element 21 are electrically connected by bonding wires 51 and 52.

With such a structure, an input signal to the surface acoustic wave element 20 passes from the input signal terminal 61 through the region 12 where p-type silicon is formed by doping, and the inside of the cap-shaped glass substrate 40. It reaches the pad 41, and is input to the surface acoustic wave element 20 from the pad 22 on the surface acoustic wave element 20 via the wire 51.

Similarly, the electric signal from the surface acoustic wave element 20 is also connected to the wire 52 from the pad 23 on the surface acoustic wave element 20, the pad 42 inside the cap-shaped glass substrate 40,
It is electrically connected to the terminal 62 outside the cap-shaped glass substrate 40 through the region 13 in which the p-type silicon is formed.

Therefore, the surface acoustic wave element 20 and the input / output signal terminal outside the cap-shaped glass 40 can be electrically connected without breaking the airtightness.

In this embodiment, the structure in which the p-type region is provided on the n-type silicon substrate is shown, but the same effect can be obtained even when the n-type region is formed on the p-type silicon substrate.

As a method for doping the silicon substrate, a method used in a normal semiconductor process can be applied. For example, there are an ion implantation method and a selective diffusion method.

Further, as the surface acoustic wave device of the present embodiment, an example in which each of the input signal and the output signal is one is shown, but in addition to this, a grounding terminal or the like can be produced by the same method. Further, the glass substrate 40 may include not only the surface acoustic wave element 20 but also a semiconductor element or a matching circuit.

Further, it is obvious that the present invention can be applied to the case where the total number of input and output terminals is three or more like the surface acoustic wave convolver.

In the present invention, the anodic bonding method is used as a method for directly bonding the cap-shaped glass to the silicon substrate, but a method of bonding by heat treatment after hydrophilic treatment may be used.

In the present embodiment, as the electronic circuit arranged on the glass substrate side, there are a VCO composed of a semiconductor thin film element or a chip element, a high frequency transmitting / receiving circuit, an oscillating circuit, an amplifying circuit, and the like. The mold well may be embedded to form an integrated circuit.

In this embodiment, the surface acoustic wave element is
Although an example in which a piezoelectric substrate made of lithium niobate or the like is bonded to a silicon substrate is shown, a piezoelectric thin film made of aluminum nitride or zinc oxide may be formed on the silicon substrate to form a surface acoustic wave element.

The cap-shaped glass substrate 40 may be formed by chemically etching or mechanically hollowing out a monolithic glass substrate, or may be formed by laminating a plurality of glass substrates.

In the present embodiment, the glass substrate 4
0 is Pyrex (Honing Corning # 774
Although the example of 0) is shown, other than this, any glass substrate containing mobile ions may be used.

In this embodiment, reliability can be improved by molding the anodic-bonded high-frequency integrated circuit with a resin or the like.

In this embodiment, electromagnetic waves can be suppressed by metallizing the inside of the cap-shaped glass substrate 40.

[Second Embodiment] FIG. 3 is a block diagram showing an example of a communication system using the surface acoustic wave device as described above. In the figure, 405 indicates a transmitting device. The transmitter 405 spread-spectrum modulates the signal to be transmitted using a spread code and transmits the signal from the antenna 401. The transmitted signal is received by the receiving device 410 and demodulated. The receiving device 410 includes an antenna 411,
The high frequency signal processing unit 412, the synchronization circuit 413, the code generator 414, the spread demodulation circuit 415, and the demodulation circuit 416 are included. The reception signal received by the antenna 411 is filtered and amplified by the high-frequency signal processing unit 412, and is output as it is as the transmission frequency band signal or as an appropriate intermediate frequency band signal. The signal is a synchronization circuit 4
13 is input.

Here, the high frequency integrated circuit device described in the first embodiment can be applied to the intermediate frequency stage of the high frequency signal processing section 412 and the synchronizing circuit 413, and is effective for downsizing the equipment. is there.

The synchronizing circuit 413 is a surface acoustic wave device 4131 shown in the embodiment of the present invention, and a modulating circuit 413 for modulating the reference spread code input from the code generator 414.
2 and a signal processing circuit 4133 that processes the signal output from the surface acoustic wave device 4131 and outputs a spread code synchronization signal and a clock synchronization signal for the transmission signal to the code generator 414. An output signal from the high frequency signal processing unit 412 and an output signal from the modulation circuit 4132 are input to the surface acoustic wave device 4131 to the surface acoustic wave device via an input side external circuit such as a filter, an amplifier or an impedance matching circuit. The convolution operation of the two input signals is performed. Here, when the reference spreading code input from the code generator 414 to the modulation circuit 4132 is a code obtained by time-reversing the spreading code transmitted from the transmitting side, a surface acoustic wave device 413 using a surface acoustic wave convolver element.
In No. 1, the correlation peak is output when the synchronization-specific spreading code component and the reference spreading code included in the received signal match on the output electrode of the waveguide of the surface acoustic wave device 4131.

Next, the signal processing circuit 4133 detects the correlation peak from the signal input from the surface acoustic wave device 4131, and shifts the code synchronization from the time from the code start of the reference spread code to the correlation peak output. The amount is calculated, and the code synchronization signal and the clock signal are output to the code generator 414.

After the synchronization is established, the code generator 414 generates a spreading code having the same clock and spreading code phase as the spreading code on the transmitting side. This spreading code is a spreading demodulation circuit 41.
The signal before being input to the signal 5 and subjected to spread modulation is restored.
Since the signal output from the spread modulation / demodulation circuit 415 is a signal that has been modulated by a modulation method such as so-called frequency modulation or phase modulation, data demodulation is performed by the applicable demodulation circuit 416.

Surface acoustic wave device 4131 used in this configuration
Is hybrid-integrated with other electronic components as a part of the high-frequency integrated circuit element, and is effective for downsizing the entire device.

[Third Embodiment] FIGS. 4 and 5 are block diagrams showing an example of a transmitter and a receiver of a communication system using the surface acoustic wave device as described above. In FIG. 4, which shows a block diagram of the transmission device, 501 is a serial-parallel converter that converts serially input data into n parallel data, and 502-1 to 50-n are parallelized data and spread code generator. A multiplier group for multiplying n spread codes output from 503, 503 is a spread code generator that generates n different spread codes PN1 to PNn and a spread code PN0 dedicated to synchronization, and 504 is a spread code generator. Synchronization dedicated spreading code PN0 output from the device 503 and the multiplier group 502-1
Adder 505 for adding n outputs of n
A high frequency stage for converting the output of 04 into a transmission frequency signal, and 506 is a transmission antenna.

Further, in FIG. 5 showing a block diagram of the receiving apparatus, 601 is a receiving antenna, 602 is a high frequency signal processing section, 603 is a synchronization circuit which captures synchronization with the spreading code and clock on the transmission side and maintains synchronization tracking, Reference numeral 604 is a spread code generator for generating n + 1 spread codes and reference spread codes, which are the same as the spread code group on the transmission side, in response to the code synchronization signal and the clock signal input from the synchronization circuit 603.
Reference numeral 05 is a carrier reproduction circuit for reproducing a carrier signal from the carrier reproduction spread code PN0 output from the spread code generator 604 and the output of the high frequency signal processing unit 602, and 606 is the output of the carrier reproduction circuit 605 and the high frequency signal processing unit 602.
Of the baseband demodulation circuit 6 and the output of the spreading code generator 604 using the n spreading codes PN1 to PNn.
It is a parallel-to-serial converter that performs parallel-to-serial conversion of n pieces of parallel demodulated data output from 06.

In the above configuration, on the transmission side, first, the input data is converted by the serial-parallel converter 501 into n pieces of parallel data equal to the number of code division multiplexes. On the other hand, the spreading code generator 503 has the same code period and generates n + 1 different spreading codes PN0 to PNn. Of these, PN0 is dedicated to synchronization and carrier reproduction, is not modulated by the parallel data, and is directly input to the adder 504. The remaining n spread codes PN1 to PNn are modulated by n parallel data in the multiplier groups 502-1 to 50n and input to the adder 504. The adder 504 linearly adds the n + 1 input signals and outputs the added baseband signal to the high frequency stage 505. Subsequently, the baseband signal is converted into a high-frequency signal having an appropriate center frequency in the high-frequency stage 505 and transmitted from the transmission antenna 506.

Next, on the receiving side, the signal received by the receiving antenna 601 is appropriately filtered and amplified by the high frequency signal processing section 602, and is output as it is as a transmission frequency band signal or as an appropriate intermediate frequency band signal. It The signal is input to the synchronization circuit 603. The synchronization circuit 603 processes the signals output from the surface acoustic wave device 6031 and the modulation circuit 6032 for modulating the reference spread code input from the code generator 604 and the surface acoustic wave device 6031 described in the embodiment of the present invention. , A signal processing circuit 6033 for outputting a spread code synchronization signal and a clock synchronization signal for the transmission signal to a spread code generator 604.

Here, the high frequency integrated circuit device described in the first embodiment can be applied to a part including the filter of the high frequency signal processing unit 602 and the synchronizing circuit 603.

As the surface acoustic wave device 6031, any one of the surface acoustic wave devices shown in the first to third embodiments is used, and the signal from the high frequency signal processing section 602 and the modulation circuit 6 are used.
The signal from 032 is input, and the convolution operation of two input signals is performed. Here, the code generator 60
When the code sequence of the reference spreading code input to the modulation circuit 6032 from No. 4 is a code sequence obtained by time-reversing the synchronization-dedicated spreading code transmitted from the transmission side, the surface acoustic wave device 6031 synchronizes the synchronization signal included in the reception signal. The code sequence of the dedicated spread code component and the code sequence of the reference spread code are the surface acoustic wave device 603.
The correlation peak is output when there is a match on one output electrode.

Next, the signal processing circuit 6033 detects the correlation peak from the signal output from the surface acoustic wave device 6031, and shifts the code synchronization from the time from the code start of the reference spread code to the correlation peak output. The amount is calculated, a code synchronization signal and a clock signal are generated, and output to the spread code generator 604.

After the synchronization is established, the spreading code generator 604 generates a spreading code group in which the clock and the spreading code phase match with the spreading code group on the transmitting side. Of these code groups, the spread code PN0 dedicated to synchronization is input to the carrier reproduction circuit 605. The carrier reproduction circuit 605 despreads the reception signal converted to the transmission frequency band or the intermediate frequency band which is the output of the high frequency signal processing unit 602 by the synchronization-dedicated spreading code PN0, and reproduces the carrier wave in the transmission frequency band or the intermediate frequency band. .

The carrier reproducing circuit 605 has a structure using, for example, a phase locked loop. The received signal and the synchronization-dedicated spreading code PN0 are multiplied by the multiplier. After the synchronization is established, the clock and code phase of the synchronization-specific spreading code in the received signal and the reference-specific synchronization-specific spreading code PN0 match, and the transmission-side synchronization-specific spreading code is not modulated with data. Is despread at, and a carrier component appears at the output. The output is then input to a bandpass filter, and only the carrier component is extracted and output. The output is then input to a well-known phase-locked loop consisting of a phase detector, a loop filter and a voltage controlled oscillator, and a phase is applied to a carrier component output from the voltage controlled oscillator through a bandpass filter. The locked signal is output as a reproduced carrier wave.

The reproduced carrier wave is input to the baseband demodulation circuit 606. The baseband demodulation circuit 606 generates a baseband signal from the reproduced carrier wave and the output of the high frequency signal processing unit 602. The baseband signal is divided into n pieces and despreaded for each code division channel by the spreading code groups PN1 to PNn output from the spreading code generator 604, and subsequently data demodulation is performed. The parallel demodulated n demodulated data is converted into serial data by the parallel-serial converter 607, and the signal input to the transmission device is output.

The surface acoustic wave device used in this embodiment is used as a part of the above-mentioned high frequency integrated circuit element and is effective for downsizing the entire device. By downsizing, the signal processing of each part can be accurately performed. Can be done.

Although the present embodiment is a case of binary modulation, other modulation methods such as quadrature modulation may be used.

[0058]

As described above, according to the present invention, a surface acoustic wave element is produced in a high frequency integrated circuit in which an electronic circuit such as a high frequency circuit and a surface acoustic wave element are formed on a semiconductor substrate such as silicon. In a high-frequency integrated circuit in which a glass cap having a space above the dielectric thin film is bonded by an anodic bonding method or the like, a surface acoustic wave element inside the cap and a circuit outside the cap on a p-type (or n-type) silicon substrate are connected. An n-type (or p-type) region is formed in a region to be electrically connected, and a conductive bonding pad is formed on the surface of the n-type (or p-type) region inside the cap-shaped glass substrate. The element and the pad are connected by wire bonding, and a desired conductive portion is also provided in the n-type (or p-type) region outside the cap-shaped glass substrate to form a surface acoustic wave element. It is possible to achieve simplification of the means for electrically connecting such a surface acoustic wave device in the cap and the circuit of the cap outside for electrically joining the parts.

[Brief description of drawings]

FIG. 1 is a plan view of a high frequency integrated device according to a first embodiment of the present invention.

FIG. 2 is a sectional view of the high-frequency integrated device according to the first embodiment of the present invention.

FIG. 3 is a block diagram of a communication system using the high frequency integrated circuit device according to the present invention.

FIG. 4 is a block diagram of a transmitter of a communication system using a high frequency integrated circuit element according to the present invention.

FIG. 5 is a block diagram of a receiver of a communication system using a high frequency integrated circuit device according to the present invention.

[Explanation of symbols]

10 integrated circuit element 11 n-type silicon semiconductor substrate 12, 13 p-type silicon region formed on a part of n-type silicon semiconductor substrate 20 surface acoustic wave element, 21 piezoelectric substrate such as lithium niobate 22, 23 input and Output electrode bonding pad 30 Electronic circuit 40 Cap-shaped glass substrate 41, 42 Bonding pad Bonding pad 51, 52 Bonding wire 61, 62 Input signal and output signal terminal 405 Transmitter 410 Receiver 4131, 6031 Elastic surface Wave device

 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Akihiro Koyama 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Takahiro Hachisu 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Within the corporation

Claims (12)

[Claims] 1. A cap in which at least a surface acoustic wave element and an electronic circuit are formed on a semiconductor substrate, and a space of a concave portion is formed inside so as to face a main surface of the surface acoustic wave element on the semiconductor substrate. In a high-frequency integrated circuit element in which the glass substrate is directly bonded to the surface of the semiconductor substrate and the convex portion of the cap-shaped glass substrate so as to cover at least the surface acoustic wave device, the cap-shaped glass of the semiconductor substrate At least a part of the periphery of the region where the convex portion is in contact with the convex portion of the cap-shaped glass across the inner side and the outer side of the cap-shaped glass toward the depth direction of the semiconductor substrate is doped with impurities. A high-frequency integrated circuit device characterized in that 2. The high frequency integrated circuit device according to claim 1, wherein the means for directly bonding the cap-shaped glass substrate and the semiconductor substrate is anodic bonding. 3. The high frequency integrated circuit device according to claim 1, wherein the semiconductor substrate is made of silicon. 4. The high frequency integrated circuit device according to claim 3, wherein the semiconductor substrate is made of n-type silicon, and the region doped with the impurity is p-type silicon. 5. The high frequency integrated circuit device according to claim 3, wherein the semiconductor substrate is made of p-type silicon, and the region doped with the impurity is n-type silicon. 6. The signal input / output terminal on the surface acoustic wave element arranged inside the cap-shaped glass substrate and the impurity-doped region inside the cap-shaped glass substrate are electrically connected. 6. The high frequency integrated circuit device according to claim 1, wherein 7. The means for electrically connecting a signal input / output terminal on the surface acoustic wave device and the impurity-doped region is a means for electrically connecting the input / output terminal on the surface acoustic wave device and the cap-shaped glass substrate. 7. A high-frequency integrated circuit device according to claim 1, wherein a conductive material is formed in the impurity-doped region inside and is connected by a conductive wire. 8. The high frequency integrated circuit element according to claim 1, wherein the surface acoustic wave element is made of either a piezoelectric single crystal substrate or a piezoelectric thin film. 9. A conductive thin film is formed between the bonding surfaces of the semiconductor substrate and the glass substrate in order to anodic bond the semiconductor substrate and the glass substrate. 9. The high frequency integrated circuit device according to any one of items 8. 10. The high frequency integrated circuit element according to claim 9, wherein the conductive thin film is at least one of aluminum, titanium, and silicon. 11. A high-frequency integrated circuit device, characterized in that the high-frequency integrated circuit element according to any one of claims 1 to 10 is resin-molded. 12. A communication system comprising the high frequency integrated circuit device according to claim 1. Description: