JPH09298270A - Resin sealed semiconductor device - Google Patents

Resin sealed semiconductor device

Info

Publication number
JPH09298270A
JPH09298270A JP8109230A JP10923096A JPH09298270A JP H09298270 A JPH09298270 A JP H09298270A JP 8109230 A JP8109230 A JP 8109230A JP 10923096 A JP10923096 A JP 10923096A JP H09298270 A JPH09298270 A JP H09298270A
Authority
JP
Japan
Prior art keywords
resin
outer peripheral
die pad
peripheral portion
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8109230A
Other languages
Japanese (ja)
Inventor
Toshihiro Murayama
敏宏 村山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8109230A priority Critical patent/JPH09298270A/en
Publication of JPH09298270A publication Critical patent/JPH09298270A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a resin sealed semiconductor device which can be improved in its quality, by controlling an initial point of resin cracking generation caused by a concentrated stress at an outer peripheral part of a die pad. SOLUTION: An angle made by a surface of upper peripheral part 1a of a die pad 1 joined to a semiconductor element 3 and by a side face thereof is an obtuse angle or forms a round shape, whereas an angle defined by the bottom and side surfaces of a lower outer peripheral part 1b is an acute angle. An initial position of generation of resin cracking can be controlled to lie in the lower outer peripheral part 1b of the die pad 1. Thus, even when a concentrated stress causes generation of the resin cracking, the resin cracking generation initial position can be restricted to be in the lower outer peripheral part 1b where the cracking has less effects on a wire 4 of the die pad 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、樹脂封止型半導体
装置、特にダイパッド上に半導体素子をボンディング
し、前記半導体素子の電極とダイパッドの周囲のリード
との間にワイヤをボンディングし、前記ダイパッド、半
導体素子、ワイヤ及びリード内端部を樹脂で封止した樹
脂封止型半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device, particularly a semiconductor element is bonded on a die pad, and a wire is bonded between an electrode of the semiconductor element and a lead around the die pad to form the die pad. , A semiconductor element, a wire, and a resin-sealed semiconductor device in which inner ends of leads are sealed with a resin.

【０００２】[0002]

【従来の技術】ＩＣ、トランジスタなどの半導体装置
で、ダイあるいはチップなどと称される半導体素子を例
えばエポキシ樹脂のような熱硬化性樹脂で封止した樹脂
封止型半導体装置が広く普及している。この樹脂封止型
半導体装置はコスト的に有利なので、量産性に優れてい
る。2. Description of the Related Art In semiconductor devices such as ICs and transistors, resin-encapsulated semiconductor devices in which semiconductor elements called dies or chips are encapsulated with a thermosetting resin such as epoxy resin have become widespread. There is. Since this resin-encapsulated semiconductor device is advantageous in cost, it is excellent in mass productivity.

【０００３】図３（Ａ）、（Ｂ）は従来の樹脂封止型半
導体装置の一例を示すもので、（Ａ）は断面図、（Ｂ）
は（Ａ）の主要部Ａの拡大図である。１はダイパッド、
２は該ダイパッド１の周囲に配置されたリード、３は接
着剤を介してダイパッド１上にボンディングされた半導
体素子、３ａは半導体素子３の外周部である。４は半導
体素子３の電極とリード２との間にボンディングされた
ワイヤ、５はダイパッド１、半導体素子３、ワイヤ４及
びリード３の内端部を封止した樹脂である。3A and 3B show an example of a conventional resin-sealed semiconductor device. FIG. 3A is a sectional view, and FIG.
[Fig. 3] is an enlarged view of a main part A of (A). 1 is a die pad,
Reference numeral 2 is a lead arranged around the die pad 1, 3 is a semiconductor element bonded on the die pad 1 with an adhesive, and 3a is an outer peripheral portion of the semiconductor element 3. Reference numeral 4 is a wire bonded between the electrode of the semiconductor element 3 and the lead 2, and 5 is a resin that seals the die pad 1, the semiconductor element 3, the wire 4 and the inner ends of the lead 3.

【０００４】ダイパッド１及びリード２は、例えばＦｅ
−Ｎｉ合金からなる金属板をエッチングあるいはパンチ
ングなどによって所望のパターンに形成することにより
リードフレームの形で一体に形成され、このリードフレ
ームのダイパッド１上への半導体素子３のボンディン
グ、ワイヤ４のボンディング及び樹脂５の封止終了後
に、リードフレームの不要部をカットすることにより、
電気的に分離されている。また、リード３のワイヤ４が
ボンディングされる内端部はインナーリードとなるとと
もに、樹脂５から引き出されている部分はアウターリー
ドとなる。樹脂５は例えばエポキシ樹脂のような熱硬化
性樹脂を用いて、トランスファモールド法によって成形
される。The die pad 1 and the leads 2 are made of Fe, for example.
-A metal plate made of a Ni alloy is integrally formed in the form of a lead frame by forming it into a desired pattern by etching, punching, or the like. By cutting unnecessary parts of the lead frame after completion of the sealing of the resin 5 and
Electrically isolated. The inner end of the lead 3 to which the wire 4 is bonded serves as the inner lead, and the portion of the lead 3 that is pulled out from the resin 5 serves as the outer lead. The resin 5 is formed by a transfer molding method using a thermosetting resin such as an epoxy resin.

【０００５】ここで、このような樹脂封止型半導体装置
では、半導体素子３をボンディングするダイパッド１の
外周部の形状が、図３（Ｂ）に示すように、表面と側面
がなす角度α及び底面と側面のなす角度βはともに、ほ
ぼ直角に形成されている。そのため、樹脂封止型半導体
装置を各種電子機器に実装するために半田リフローする
際に、この熱によりダイパッド１の裏面に存在する水分
が気化膨脹することによって、図４に示すように、その
ダイパッド１の上方外周部１ａあるいは下方外周部１ｂ
に応力が集中するようになるので、各々の部分で樹脂ク
ラック６が発生するようになる。Here, in such a resin-encapsulated semiconductor device, the shape of the outer peripheral portion of the die pad 1 for bonding the semiconductor element 3 is, as shown in FIG. Both the angle β formed by the bottom surface and the side surface are formed substantially at right angles. Therefore, when the resin-encapsulated semiconductor device is soldered and reflowed to be mounted on various electronic devices, the heat causes the moisture present on the back surface of the die pad 1 to evaporate and expand, and as shown in FIG. 1 outer peripheral portion 1a or lower outer peripheral portion 1b
Since the stress concentrates on the resin cracks 6, the resin cracks 6 are generated at the respective portions.

【０００６】このため、図５（Ａ）、（Ｂ）に示すよう
に、ダイパッド１の下方外周部１ｂを面取り加工するこ
とにより、あるいは、図７（Ａ）、（Ｂ）に示すよう
に、ダイパッド１の上方外周部１ａ及び下方外周部１ｂ
を滑らかにテーパ加工することにより、この下方外周部
１ｂへの応力集中を防止するようにした形状が提案され
ている。Therefore, as shown in FIGS. 5A and 5B, the lower outer peripheral portion 1b of the die pad 1 is chamfered, or as shown in FIGS. 7A and 7B. Upper outer peripheral portion 1a and lower outer peripheral portion 1b of the die pad 1.
A shape has been proposed in which stress concentration on the lower outer peripheral portion 1b is prevented by smoothly tapering.

【０００７】[0007]

【発明が解決しようとする課題】ところで、従来のダイ
パッドの形状では、ダイパッド１の下方外周部１ｂへの
応力集中を防止できるものの、次に応力が集中する位置
を起点として新たな樹脂クラックの発生が懸念されると
いう問題がある。特に、ダイパッド１の上方外周部１ａ
を起点とする樹脂クラックが発生すると、ワイヤ４を断
線させる可能性が大きくなるため、樹脂封止型半導体装
置の品質を低下させるようになる。By the way, in the conventional die pad shape, although the stress concentration on the lower outer peripheral portion 1b of the die pad 1 can be prevented, a new resin crack is generated from the position where the stress is concentrated next. Is a concern. In particular, the upper outer peripheral portion 1a of the die pad 1
When the resin crack starting from the point is generated, there is a high possibility that the wire 4 is broken, so that the quality of the resin-encapsulated semiconductor device is deteriorated.

【０００８】しかしながら、ダイパッド１の下方外周部
１ｂを起点とする樹脂クラックは程度が小さければ、品
質に大きく影響することは少ない。というのは、クラッ
クが下方に延びワイヤ４とぶつかるおそれがないからで
ある。However, if the degree of the resin crack originating from the lower outer peripheral portion 1b of the die pad 1 is small, the quality of the resin crack is not significantly affected. This is because the crack does not extend downward and there is no risk of hitting the wire 4.

【０００９】ちなみに、図５（Ａ）、（Ｂ）に示すダイ
パッドの形状では、図６に示すように、ダイパッド１の
下方外周部１ｂへの応力集中を防止できるものの、その
上方外周部１ａに応力集中が生じてこの位置を起点とし
て新たな樹脂クラック６が発生するようになり、さらに
半導体素子３の外周部３ａにも応力集中が生じてこの位
置を起点として新たな樹脂クラック６が発生するように
なる。この場合、特に、ダイパッド１の上方外周部１ａ
及び半導体素子３の外周部３ａを起点とする樹脂クラッ
ク６は、ワイヤ４を断線させる可能性が大きくなるので
問題となる。図７（Ａ）、（Ｂ）に示すダイパッドの形
状においても、同様な懸念がある。Incidentally, in the shape of the die pad shown in FIGS. 5 (A) and 5 (B), as shown in FIG. 6, stress concentration on the lower outer peripheral portion 1b of the die pad 1 can be prevented, but on the upper outer peripheral portion 1a thereof. Stress concentration occurs and new resin cracks 6 are generated starting from this position. Further, stress concentration also occurs in the outer peripheral portion 3a of the semiconductor element 3, and new resin cracks 6 are generated starting from this position. Like In this case, in particular, the upper outer peripheral portion 1a of the die pad 1
Also, the resin crack 6 starting from the outer peripheral portion 3a of the semiconductor element 3 becomes a problem because the possibility of disconnecting the wire 4 increases. Similar concerns exist in the shape of the die pad shown in FIGS. 7 (A) and 7 (B).

【００１０】本発明はこのような問題点を解決すべくな
されたものであり、ダイパッドの外周部に応力集中が生
じて脂樹クラックが発生する場合に、樹脂クラックの発
生する起点をコントロールして樹脂封止型半導体装置の
品質の向上を図ることを目的とする。The present invention has been made to solve such a problem, and when stress concentration occurs in the outer peripheral portion of the die pad to cause a resin crack, the starting point of the resin crack is controlled. An object is to improve the quality of a resin-sealed semiconductor device.

【００１１】[0011]

【課題を解決するための手段】本発明樹脂封止型半導体
装置は、ダイパッドの上方外周部の表面と側面がなす角
部が鈍角あるいは面取りされ、かつ下方外周部の底面と
側面がなす角度が鋭角にされたことを特徴とする。In the resin-sealed semiconductor device of the present invention, the corners formed by the surface and the side surface of the upper peripheral portion of the die pad are obtuse or chamfered, and the angle between the bottom surface and the side surface of the lower peripheral portion is small. It is characterized by being sharpened.

【００１２】従って、本発明樹脂封止型半導体装置によ
れば、半導体素子がボンディングされたダイパッドの上
方外周部の表面と側面とが成す角部が鈍角あるいは丸い
形状で、かつ下方外周部の底面と側面が成す角度が鋭角
になっている形状であるので、ダイパッドの下方外周部
に応力集中が生じ易い。従って、脂樹クラックが発生す
る場合に、樹脂クラックの発生する起点をワイヤへの影
響力の少なく下方外周部になるようにコントロールする
ことができ、樹脂封止型半導体装置の信頼性の向上を図
ることができる。Therefore, according to the resin-sealed semiconductor device of the present invention, the corner formed by the surface and the side surface of the upper outer peripheral portion of the die pad to which the semiconductor element is bonded is obtuse or rounded, and the bottom surface of the lower outer peripheral portion. Since the angle formed by the side surface and the side surface is an acute angle, stress concentration is likely to occur in the lower outer peripheral portion of the die pad. Therefore, when a resin crack occurs, it is possible to control the starting point of the resin crack so that the starting point is a lower outer peripheral portion with less influence on the wire, and the reliability of the resin-encapsulated semiconductor device is improved. Can be planned.

【００１３】[0013]

【発明の実施の形態】以下、本発明を図示実施の形態に
従って詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments.

【００１４】図１（Ａ）、（Ｂ）は本発明樹脂封止型半
導体装置の第１の実施の形態を示すもので、（Ａ）は断
面図、（Ｂ）は（Ａ）の主要部Ａの拡大図である。FIGS. 1A and 1B show a first embodiment of a resin-sealed semiconductor device of the present invention. FIG. 1A is a sectional view and FIG. 1B is a main part of FIG. It is an enlarged view of A.

【００１５】図面において、１はダイパッド、２は該ダ
イパッド１の周囲に配置されたリード、３は接着剤を介
してダイパッド１上にボンディングされた半導体素子、
３ａは半導体素子３の外周部、４は半導体素子３の電極
とリード２間にボンディングされたワイヤ、５はダイパ
ッド１、半導体素子３、ワイヤ４及びリード３内端部を
封止した樹脂である。In the drawings, 1 is a die pad, 2 is a lead arranged around the die pad 1, 3 is a semiconductor element bonded on the die pad 1 via an adhesive,
Reference numeral 3a is an outer peripheral portion of the semiconductor element 3, 4 is a wire bonded between the electrode of the semiconductor element 3 and the lead 2, and 5 is a resin that seals the die pad 1, the semiconductor element 3, the wire 4 and the inner end portion of the lead 3. .

【００１６】ダイパッド１及びリード２は、従来例と同
様に、例えばＦｅ−Ｎｉ合金からなる金属板をエッチン
グあるいはパンチング等によって所望のパターンに形成
したリードフレームの形で一体に形成され、このリード
フレームのダイパッド１上への半導体素子３のボンディ
ング、ワイヤ４のボンディング及び樹脂５による封止の
終了後に、リードフレームの不要部をカットすることに
より、電気的に分離されている。また、リード３のワイ
ヤ４がボンディングされる端部はインナーリードとなる
と共に、樹脂５から引き出されている部分はアウターリ
ードとなる。樹脂５は例えばエポキシ樹脂のような熱硬
化性樹脂を用いて、トランスファモールド法によって成
形される。As in the conventional example, the die pad 1 and the leads 2 are integrally formed in the form of a lead frame in which a metal plate made of, for example, an Fe--Ni alloy is formed into a desired pattern by etching or punching. After the semiconductor element 3 is bonded onto the die pad 1, the wire 4 is bonded, and the resin 5 is used for sealing, unnecessary portions of the lead frame are cut to electrically separate them. Further, the end of the lead 3 to which the wire 4 is bonded becomes an inner lead, and the part pulled out from the resin 5 becomes an outer lead. The resin 5 is formed by a transfer molding method using a thermosetting resin such as an epoxy resin.

【００１７】ここで、半導体素子３がボンディングされ
たダイパッド１の外周部は、上方外周部１ａの表面と側
面が成す角度αが鈍角で、かつ下方外周部１ｂの底面と
側面のなす角度βが鋭角、望ましくは３０度乃至７０度
の範囲になる形状にされている。Here, in the outer peripheral portion of the die pad 1 to which the semiconductor element 3 is bonded, the angle α formed by the surface of the upper outer peripheral portion 1a and the side surface is obtuse, and the angle β formed by the bottom surface and the side surface of the lower outer peripheral portion 1b is formed. The shape is an acute angle, preferably in the range of 30 to 70 degrees.

【００１８】そのような、ダイパッド１の上方外周部１
ａの形状及び下方外周部１ｂの形状は、周知のエッチン
グあるいはパンチング、またはコイニング技術を応用す
ることにより形成することができる。例えば、エッチン
グによる場合は、上下のエッチングマスクの開口幅を変
えることにより容易に加工でき、パンチングによる場合
は、通常にダイパッド1 を形成した後、ダイパッド1 の
上方外周部1 ａを叩くことにより容易に加工できる。Such an upper outer peripheral portion 1 of the die pad 1
The shape of a and the shape of the lower outer peripheral portion 1b can be formed by applying a well-known etching or punching or coining technique. For example, in the case of etching, it can be easily processed by changing the opening widths of the upper and lower etching masks, and in the case of punching, it can be easily formed by forming the die pad 1 and then hitting the upper outer peripheral portion 1a of the die pad 1. Can be processed into

【００１９】このような、本発明樹脂封止型半導体装置
によれば、ダイパッド１の上方外周部１ａの表面と側面
がなす角度αが鈍角で、かつ下方外周部１ｂの底面と側
面のなす角度βが鋭角に形成されているので、樹脂封止
型半導体装置を各種電子機器に実装するために半田リフ
ローする際に、この熱によりダイパッド１の裏面に存在
する水分が気化膨脹しても、これに基づいて生ずる応力
を下方外周部１ｂに集中させることができるようにな
る。According to such a resin-encapsulated semiconductor device of the present invention, the angle α formed by the surface and the side surface of the upper outer peripheral portion 1a of the die pad 1 is an obtuse angle, and the angle formed by the bottom surface and the side surface of the lower outer peripheral portion 1b. Since β is formed at an acute angle, even if moisture existing on the back surface of the die pad 1 is vaporized and expanded by this heat during solder reflow for mounting the resin-sealed semiconductor device on various electronic devices, It is possible to concentrate the stress caused by the above on the lower outer peripheral portion 1b.

【００２０】従って、樹脂クラックの発生する起点がダ
イパッド１の下方外周部１ｂになるようにクラックの発
生起点のコントロールをすることができる。これによ
り、応力集中により樹脂クラックが発生しても、この樹
脂クラックはダイパッド１の下方外周部１ｂを起点とす
るので、斜下外方に延び、ワイヤ４の存在するところか
ら大きく逸れる。従って、ワイヤ４の断線不良を起こさ
せる可能性は極めて少なくなる。Therefore, it is possible to control the starting point of the crack so that the starting point of the resin crack is the lower outer peripheral portion 1b of the die pad 1. As a result, even if a resin crack occurs due to stress concentration, the resin crack originates from the lower outer peripheral portion 1b of the die pad 1, and therefore extends obliquely outward and largely deviates from where the wire 4 exists. Therefore, the possibility of causing disconnection failure of the wire 4 is extremely reduced.

【００２１】即ち、半導体素子３の外周部３ａを起点と
する樹脂クラックが発生する可能性はほとんどなくな
り、クラックが発生したとしてもダイパッド１の下方外
周部１ｂが起点となり易く、そのようなクラックはその
大きさの程度が特に大きくない限り、品質に大きく影響
するおそれがないので、樹脂封止型半導体装置の信頼度
の向上を図ることができるのである。That is, there is almost no possibility that a resin crack originating from the outer peripheral portion 3a of the semiconductor element 3 will occur, and even if a crack occurs, the lower outer peripheral portion 1b of the die pad 1 tends to act as a starting point. As long as the size of the resin-sealed semiconductor device is not particularly large, the quality of the resin-sealed semiconductor device is not likely to be significantly affected, so that the reliability of the resin-sealed semiconductor device can be improved.

【００２２】ここで、ダイパッド１の外周部の形状にお
いて、特に、下方外周部１ｂの表面と側面がなす角度β
の鋭角を略７０度乃至３０度の範囲に選んだ場合に、良
好な結果が得られる。Here, in the shape of the outer peripheral portion of the die pad 1, in particular, the angle β formed by the surface and the side surface of the lower outer peripheral portion 1b.
Good results are obtained when the acute angle is selected in the range of approximately 70 degrees to 30 degrees.

【００２３】図２（Ａ）、（Ｂ）は本発明樹脂封止型半
導体装置の第２の実施の形態を示すもので、（Ａ）は断
面図、（Ｂ）は（Ａ）の主要部Ａの拡大図である。図面
において、図１（Ａ）、（Ｂ）と共通部分には同一の符
号を付与した。FIGS. 2A and 2B show a second embodiment of the resin-sealed semiconductor device of the present invention. FIG. 2A is a sectional view and FIG. 2B is a main part of FIG. It is an enlarged view of A. In the drawings, the same parts as those in FIGS. 1A and 1B are designated by the same reference numerals.

【００２４】ここで、半導体素子３を接合するダイパッ
ド１の外周部の形状は、上方外周部１ａが丸い形状で、
かつ下方外周部１ｂの底面と側面のなす角度βが鋭角、
望ましくは３０度乃至７０度の範囲にされている。Here, the shape of the outer peripheral portion of the die pad 1 for joining the semiconductor element 3 is such that the upper outer peripheral portion 1a is round,
The angle β formed by the bottom surface and the side surface of the lower outer peripheral portion 1b is an acute angle,
Desirably, the angle is in the range of 30 to 70 degrees.

【００２５】そのようなダイパッド１の上方外周部１ａ
の形状及び下方外周部１ｂの形状は、第１の実施の形態
と同様に、周知のエッチング、パンチング、又はコイニ
ング技術を応用することにより形成することができる。
すなわち、エッチングによる場合は、上下のエッチング
マスクの開口幅を変えることにより容易に加工でき、パ
ンチングによる場合は、通常にダイパッド1 を形成した
後、ダイパッド1 の上方外周部1 ａを叩くことにより容
易に加工できる。The upper outer peripheral portion 1a of such a die pad 1
The shape and the shape of the lower outer peripheral portion 1b can be formed by applying well-known etching, punching, or coining techniques, as in the first embodiment.
That is, in the case of etching, it can be easily processed by changing the opening width of the upper and lower etching masks, and in the case of punching, it can be easily formed by forming the die pad 1 and then hitting the upper outer peripheral portion 1a of the die pad 1. Can be processed into

【００２６】このような、本発明樹脂封止型半導体装置
のダイパッド１の形状によれば、上方外周部１ａが丸い
形状で、かつ下方外周部１ｂの底面と側面のなす角度β
が鋭角に形成されていることによって、樹脂封止型半導
体装置を各種電子機器に実装するために半田リフローす
る際に、この熱によりダイパッド１の裏面に存在する水
分が気化膨脹しても、これに基づいて生ずる応力を下方
外周部１ｂに集中させることができるようになる。According to such a shape of the die pad 1 of the resin-encapsulated semiconductor device of the present invention, the upper outer peripheral portion 1a has a round shape, and the angle β formed between the bottom surface and the side surface of the lower outer peripheral portion 1b.
Since the heat is formed at an acute angle, even if moisture existing on the back surface of the die pad 1 is vaporized and expanded by this heat during solder reflow for mounting the resin-encapsulated semiconductor device on various electronic devices, It is possible to concentrate the stress caused by the above on the lower outer peripheral portion 1b.

【００２７】従って、第１の実施の形態と同様に、樹脂
クラックの発生する場合における起点をダイパッド１の
下方外周部１ｂになるようにコントロールすることがで
きるようになる。これにより、応力集中により樹脂クラ
ックが発生しても、この起点はダイパッド１の下方外周
部に制約されるので、ワイヤ４の断線不良を起こさせる
可能性は極めて少なくなる。例えば、半導体素子３の外
周部３ａを起点とする樹脂クラックが発生する可能性は
ほとんどなくなり、ダイパッド１の下方外周部１ｂを起
点とする樹脂クラックが生じてもその程度が特に大きく
ない限り、品質に大きく影響することは少なくなるた
め、樹脂封止型半導体装置の信頼度の向上を図ることが
できるようになる。Therefore, as in the case of the first embodiment, it is possible to control the starting point when a resin crack occurs so as to be the lower outer peripheral portion 1b of the die pad 1. As a result, even if a resin crack is generated due to stress concentration, the starting point is restricted to the lower outer peripheral portion of the die pad 1, so that the possibility of causing a disconnection failure of the wire 4 is extremely small. For example, there is almost no possibility that resin cracks starting from the outer peripheral portion 3a of the semiconductor element 3 will occur, and even if resin cracks starting from the lower outer peripheral portion 1b of the die pad 1 occur, the quality is not particularly large. Therefore, the reliability of the resin-encapsulated semiconductor device can be improved.

【００２８】第１の実施の形態と同様に、特に、ダイパ
ッド１の下方外周部１ｂの表面と側面がなす角度βの鋭
角をほぼ３０度乃至７０度の範囲に選んだ場合に、良好
な結果が得られた。Similar to the first embodiment, good results are obtained especially when the acute angle of the angle β formed by the surface and the side surface of the lower outer peripheral portion 1b of the die pad 1 is selected within the range of about 30 to 70 degrees. was gotten.

【００２９】[0029]

【発明の効果】以上述べたように、本発明樹脂封止型半
導体装置によれば、半導体素子がボンディングされたダ
イパッドの上方外周部の表面と側面とが成す角部が鈍角
あるいは丸い形状で、かつ下方外周部の底面と側面が成
す角度が鋭角になっている形状であるので、ダイパッド
の上方外周部よりも下方外周部に応力集中が生じ易い。
従って、脂樹クラックが発生する場合におけるその発生
起点をワイヤへの影響力の少ない下方外周部になるよう
にコントロールすることができ、樹脂封止型半導体装置
の信頼性の向上を図ることができる。As described above, according to the resin-sealed semiconductor device of the present invention, the corners formed by the surface and the side surface of the upper outer peripheral portion of the die pad to which the semiconductor element is bonded are obtuse or round, Further, since the bottom surface and the side surface of the lower outer peripheral portion form an acute angle, stress concentration is more likely to occur in the lower outer peripheral portion than in the upper outer peripheral portion of the die pad.
Therefore, when an oil crack occurs, it can be controlled so that the starting point of the crack is in the lower outer peripheral portion that has less influence on the wire, and the reliability of the resin-sealed semiconductor device can be improved. .

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明樹脂封止型半導体装置の第１の実施の形
態を示すもので、（Ａ）は断面図、（Ｂ）は（Ａ）の要
部の拡大図である。1A and 1B show a first embodiment of a resin-encapsulated semiconductor device of the present invention, FIG. 1A is a sectional view, and FIG. 1B is an enlarged view of a main part of FIG.

【図２】本発明樹脂封止型半導体装置の第２の実施の形
態を示すもので、（Ａ）は断面図、（Ｂ）は（Ａ）の要
部の拡大図である。2A and 2B show a second embodiment of the resin-encapsulated semiconductor device of the present invention, FIG. 2A is a sectional view, and FIG. 2B is an enlarged view of a main part of FIG.

【図３】樹脂封止型半導体装置の従来例を示すもので、
（Ａ）は断面図、（Ｂ）は（Ａ）の要部の拡大図であ
る。FIG. 3 shows a conventional example of a resin-sealed semiconductor device,
(A) is a cross-sectional view and (B) is an enlarged view of a main part of (A).

【図４】図４の従来例の問題を説明する断面図である。FIG. 4 is a cross-sectional view illustrating a problem of the conventional example of FIG.

【図５】樹脂封止型半導体装置の他の従来例を示すもの
で、（Ａ）は断面図、（Ｂ）は（Ａ）の要部拡大図であ
る。5A and 5B show another conventional example of a resin-encapsulated semiconductor device, in which FIG. 5A is a sectional view and FIG. 5B is an enlarged view of a main part of FIG.

【図６】図５の従来例の欠点を説明する断面図である。FIG. 6 is a cross-sectional view illustrating a defect of the conventional example of FIG.

【図７】樹脂封止型半導体装置のその他の従来例を示す
もので、（Ａ）は断面図、（Ｂ）は（Ａ）の主要部の拡
大図である。7A and 7B show another conventional example of a resin-encapsulated semiconductor device, in which FIG. 7A is a sectional view and FIG. 7B is an enlarged view of a main part of FIG.

【符号の説明】[Explanation of symbols]

１…ダイパッド、１ａ…ダイパッドの上方外周部、１ｂ
…ダイパッドの下方外周部、２…リード、３…半導体素
子、３ａ…半導体素子の外周部、４…ワイヤ、５…樹
脂、６…樹脂クラック。1 ... die pad, 1a ... upper peripheral part of die pad, 1b
... Lower outer peripheral portion of die pad, 2 ... Lead, 3 ... Semiconductor element, 3a ... Outer peripheral portion of semiconductor element, 4 ... Wire, 5 ... Resin, 6 ... Resin crack.

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 ダイパッド上に半導体素子をボンディン
グし、前記半導体素子の電極とダイパッドの周囲のリー
ドとの間をワイヤによりボンディングし、前記ダイパッ
ド、半導体素子、ワイヤ及びリード内端部を樹脂で封止
した樹脂封止型半導体装置であって、 前記ダイパッドの上方外周部の表面と側面とで成す角部
が鈍角あるいは丸い形状で、かつ下方外周部の底面と側
面とで成す角度が鋭角にされたことを特徴とする樹脂封
止型半導体装置。1. A semiconductor element is bonded onto a die pad, a wire is bonded between an electrode of the semiconductor element and a lead around the die pad, and the die pad, the semiconductor element, the wire and the inner end portion of the lead are sealed with a resin. In the resin-sealed semiconductor device, the corners formed by the surface and the side surface of the upper outer peripheral portion of the die pad are obtuse or round, and the angle formed by the bottom surface and the side surface of the lower outer peripheral portion is an acute angle. A resin-sealed semiconductor device characterized by the above. 【請求項２】 下方外周部の底面と側面が成す角度が、
略３０度乃至７０度の範囲であることを特徴とする請求
項１記載の樹脂封止型半導体装置。2. The angle formed by the bottom surface and the side surface of the lower outer peripheral portion is
2. The resin-encapsulated semiconductor device according to claim 1, wherein the angle is in the range of approximately 30 degrees to 70 degrees.
JP8109230A 1996-04-30 1996-04-30 Resin sealed semiconductor device Pending JPH09298270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8109230A JPH09298270A (en) 1996-04-30 1996-04-30 Resin sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8109230A JPH09298270A (en) 1996-04-30 1996-04-30 Resin sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPH09298270A true JPH09298270A (en) 1997-11-18

Family

ID=14504919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8109230A Pending JPH09298270A (en) 1996-04-30 1996-04-30 Resin sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPH09298270A (en)

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