JPH09282617A - Production of magnetoresistance effect head - Google Patents
Production of magnetoresistance effect headInfo
- Publication number
- JPH09282617A JPH09282617A JP9662196A JP9662196A JPH09282617A JP H09282617 A JPH09282617 A JP H09282617A JP 9662196 A JP9662196 A JP 9662196A JP 9662196 A JP9662196 A JP 9662196A JP H09282617 A JPH09282617 A JP H09282617A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetoresistance effect
- head
- photoresist
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、薄膜形成による磁
気抵抗効果ヘッドの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a magnetoresistive head by forming a thin film.
【0002】[0002]
【従来の技術】近年、磁気ディスク装置の小型化・大容
量化に伴って薄膜磁気ヘッドの高性能化・高密度記録化
が要求されている。一方、磁気抵抗効果を用いて磁気的
に書かれた情報を検出することは長年にわたり公知であ
った。2. Description of the Related Art In recent years, as magnetic disk drives have become smaller and larger in capacity, higher performance and higher density recording of thin film magnetic heads have been required. On the other hand, detecting magnetically written information using the magnetoresistance effect has been known for many years.
【0003】ところで、従来の薄膜磁気ヘッドでは、情
報の書き込みと読み取りを1つのヘッド素子で行ってい
るが、書き込みの最適条件と読み取りの最適条件とは必
らずしも同一ではなく、このような場合、例えば、書き
込み性能を向上させると読み取り性能が低下するという
問題がある。しかしながら、インダクティブ型の磁気ヘ
ッドを書き込み専用ヘッドとし、かつ前記磁気抵抗効果
を利用した磁気ヘッドを読み取り専用ヘッド(以下、磁
気抵抗効果ヘッドという)とした複合型磁気ヘッドであ
れば、書き込みヘッドおよび読み取りヘッドをそれぞれ
最適設計を行うことは可能である。In a conventional thin-film magnetic head, writing and reading of information are performed by a single head element. However, the optimum conditions for writing and reading are not always the same, and such conditions are not necessarily the same. In such a case, for example, there is a problem that the read performance decreases when the write performance is improved. However, a composite magnetic head in which an inductive type magnetic head is a write-only head and a magnetic head utilizing the magnetoresistance effect is a read-only head (hereinafter, referred to as a magnetoresistance effect head) is a write head and a read head. It is possible to design each head optimally.
【0004】ここで、磁気抵抗効果ヘッドにおいて高密
度記録化をはかるには、磁気抵抗変化を感知する能動領
域(以下、トラック幅という)を狭くすること、および
磁気抵抗変化層を挟む絶縁層を薄膜化することが要求さ
れる。Here, in order to achieve high-density recording in a magnetoresistive effect head, an active area (hereinafter, referred to as a track width) for sensing a magnetoresistance change is reduced, and an insulating layer sandwiching the magnetoresistance change layer is formed. It is required to be thinner.
【0005】また、絶縁層を薄膜化する場合には、絶縁
層の膜質および絶縁層で覆われる部分の形状が製造上の
重要なポイントとなり、特に段差があるような場合、
例えば、高さ0.15μmの段差がある場合、この段差
部を厚さ0.1μmの絶縁層で覆うことは困難である。
そこで、この段差解消の一方法として、段差部分に傾斜
(テーパー)を持たせることにより、絶縁被覆の加工性
を向上させることができる。In the case where the insulating layer is thinned, the quality of the insulating layer and the shape of the portion covered with the insulating layer are important points in manufacturing.
For example, when there is a step having a height of 0.15 μm, it is difficult to cover this step with an insulating layer having a thickness of 0.1 μm.
Therefore, as one method of eliminating the step, the workability of the insulating coating can be improved by giving a slope (taper) to the step.
【0006】従来、磁気抵抗効果ヘッドにおいてパター
ンを作成する場合は、イオンミリング法やスパッタエッ
チング法などの加工方法を用いるが、例えば、イオンミ
リング法を用いる場合、段差部になだらかな傾斜を持た
せすることは困難である。また、イオンミリング処理を
行った場合には、加工の終了時期を判定することも容易
ではなく、除去する層以外の層までも除去してしまうと
いう欠点がある。Conventionally, when a pattern is formed in a magnetoresistive head, a processing method such as an ion milling method or a sputter etching method is used. For example, in the case of using an ion milling method, a step portion is provided with a gentle slope. It is difficult to do. Further, when the ion milling process is performed, it is not easy to determine the end time of the processing, and there is a disadvantage that a layer other than the layer to be removed is also removed.
【0007】[0007]
【発明が解決しようとする課題】上述した磁気抵抗効果
ヘッドのパターンを作成する場合、イオンミリング法な
どの技術によらずにパターンを形成する方法としては、
リフトオフ法が一般的に知られている。このリフトオフ
パターンによる形成方法としては、2層や3層のフォト
レジストによるものなど(以下、多層レジストという)
が一般的に知られている。しかしながら、多層レジスト
によるリフトオフパターンの形成には、フォトレジスト
を重ね塗りする工程があるため、加工工数が増加すると
いう欠点がある。When a pattern of the above-described magnetoresistive head is formed, a method of forming the pattern without using a technique such as an ion milling method is as follows.
The lift-off method is generally known. As a method of forming the lift-off pattern, a method using two or three layers of photoresist (hereinafter, referred to as a multilayer resist) is used.
Is generally known. However, the formation of a lift-off pattern using a multilayer resist has a drawback that the number of processing steps increases because there is a step of applying a photoresist repeatedly.
【0008】また、高密度記録化によってさらに狭くな
る磁気ヘッドのトラック幅は、トラック部に軸の部分を
残す従来のフォトレジストのリフトオフパターンでは、
作業がより困難になることが予想される。The track width of the magnetic head, which is further narrowed by high-density recording, is smaller than that of a conventional photoresist lift-off pattern that leaves an axial portion in the track portion.
It is expected that work will be more difficult.
【0009】[0009]
【課題を解決するための手段】上述した問題点を解決す
るため、本発明の磁気抵抗効果ヘッドの製造方法では、
磁気抵抗効果層に設ける電極層をトラック部がブリッジ
形状をなすフォトレジストパターンを用いたリフトオフ
工程により形成することを特徴とする。また、前記フォ
トレジストパターンは、単層のフォトレジストからなる
ことを特徴とする。これにより、工数の削減が可能とな
るとともに、狭トラック幅にも対応可能である。In order to solve the above-mentioned problems, a method of manufacturing a magnetoresistive head according to the present invention comprises:
An electrode layer provided on the magnetoresistive layer is formed by a lift-off process using a photoresist pattern in which a track portion has a bridge shape. Further, the photoresist pattern is made of a single layer photoresist. This makes it possible to reduce man-hours and to cope with a narrow track width.
【0010】[0010]
【発明の実施の形態】次に、本発明の一実施の形態を示
すものとして、本発明を用いた磁気抵抗効果ヘッドにお
ける電極およびバイアス層の形成方法について説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, as one embodiment of the present invention, a method of forming electrodes and bias layers in a magnetoresistive head using the present invention will be described.
【0011】図1は、本発明の一実施の形態の示す磁気
抵抗効果ヘッドの製造時における単層レジストの断面図
である。FIG. 1 is a cross-sectional view of a single-layer resist in manufacturing a magnetoresistive head according to an embodiment of the present invention.
【0012】図1を参照すると、本発明では、画像反転
型の単層レジストを使用し、適切な露光量,全面露光量
および現像時間を設定することにより、基板1上にフォ
トレジスト2からなるステンシル形状が得られる。この
場合のオーバーハング量および軸部分(中央部に残って
いる柱状をなすフォトレジスト)の高さは、露光量およ
び現像時間により規定される。Referring to FIG. 1, in the present invention, a photoresist 2 is formed on a substrate 1 by using an image inversion type single-layer resist and setting an appropriate exposure amount, overall exposure amount and development time. A stencil shape is obtained. In this case, the amount of overhang and the height of the shaft portion (columnar photoresist remaining at the center) are defined by the exposure amount and the development time.
【0013】図2は、本発明を適用した磁気抵抗効果ヘ
ッドの電極およびバイアス層の代表的なパターン形状の
一例を示す平面図である。また、図3は、図2のA−
A′線断面図であり、図4は、図2のB−B′線断面図
である。FIG. 2 is a plan view showing an example of a typical pattern shape of electrodes and bias layers of a magnetoresistive head to which the present invention is applied. FIG. 3 is a cross-sectional view of FIG.
FIG. 4 is a sectional view taken along the line A ', and FIG. 4 is a sectional view taken along the line BB' of FIG.
【0014】図2〜図4を参照すると、磁気抵抗効果ヘ
ッドの下磁性膜3と絶縁膜4とが積層された膜上には磁
気抵抗効果層(以下、MR素子という)5が形成されて
おり、かつフォトレジスト2が図1に示すステンシル形
状を有することにより、MR素子5上のフォトレジスト
2は、前記軸部分のない橋型(ブリッジ型)の断面形状
を持つようになる。図4に示す断面図では、MR素子5
上のフォトレジスト2は、あたかも中空に浮いているよ
うな状態で描かれているが、実際には、図2,図3から
判るように、周辺のフォトレジスト2によって支持され
ている。Referring to FIGS. 2 to 4, a magnetoresistive layer (hereinafter referred to as an MR element) 5 is formed on a film in which a lower magnetic film 3 and an insulating film 4 are laminated on a magnetoresistive head. Since the photoresist 2 has the stencil shape shown in FIG. 1, the photoresist 2 on the MR element 5 has a bridge-type cross-section without the shaft portion. In the sectional view shown in FIG.
Although the upper photoresist 2 is drawn as if it were floating in the air, it is actually supported by the peripheral photoresist 2 as can be seen from FIGS.
【0015】ここで、高トラック密度対応の磁気抵抗効
果ヘッドとしてトラック幅がより狭くなった場合、軸部
分を有するステンシル構造では、十分なオーバーハング
量を得ることは困難である。例えば、2μmのトラック
幅において1μmのオーバーハング量を得ようとした場
合には、理論的に困難であることが判る。従って、図3
および図4に示すようなトラック部において、軸部分の
ない橋型(ブリッジ型)の断面形状を持つレジストパタ
ーンを用いることにより、上述したような問題点を解決
することができる。Here, when the track width becomes narrower as a magnetoresistive head compatible with a high track density, it is difficult to obtain a sufficient overhang amount with a stencil structure having a shaft portion. For example, it is theoretically difficult to obtain an overhang amount of 1 μm for a track width of 2 μm. Therefore, FIG.
The above-mentioned problem can be solved by using a resist pattern having a bridge-type (bridge-type) cross-sectional shape without a shaft portion in a track portion as shown in FIG.
【0016】図5は、図2に示すレジストパターンにお
いて、電極層などのスパッタ膜を成膜した後のトラック
幅方向から見た状態を示す断面図である。図5におい
て、スパッタ膜(電極層)6を所定時間成膜した後、フ
ォトレジスト2をリフトオフ工程を経ると、MR素子5
の段差箇所にはスパッタ膜(電極層)6による傾斜面が
形成される。これにより、その後に実施する絶縁膜(図
示せず)の形成が容易になる。FIG. 5 is a sectional view showing a state after a sputtered film such as an electrode layer is formed on the resist pattern shown in FIG. 2 and viewed from the track width direction. In FIG. 5, after the sputtering film (electrode layer) 6 is formed for a predetermined time, the photoresist 2 is subjected to a lift-off process.
An inclined surface is formed by the sputtered film (electrode layer) 6 at the stepped portion. This facilitates the subsequent formation of an insulating film (not shown).
【0017】図6は、リフトオフ工程後のスパッタ膜の
成膜状態の一例を示す拡大図であって、スパッタ膜6
は、図6に示すように、例えば膜厚が200nmの場
合、テーパー角は10°以下となり、段差が解消され
る。FIG. 6 is an enlarged view showing an example of a film formation state of the sputtered film after the lift-off step.
As shown in FIG. 6, when the film thickness is 200 nm, for example, the taper angle becomes 10 ° or less, and the step is eliminated.
【0018】[0018]
【発明の効果】以上説明したように、本発明による磁気
抵抗効果ヘッドの製造方法は、単層フォトレジストのリ
フトオフパターンを使用することにより、磁気抵抗効果
ヘッドの製造工程を簡略化することができる。また、ト
ラック部に橋型(ブリッジ型)の断面構造を持つレジス
トパターンを使用することによって、狭トラック幅の磁
気抵抗効果ヘッドに対応可能となる。As described above, the method of manufacturing a magnetoresistive head according to the present invention can simplify the manufacturing process of the magnetoresistive head by using a lift-off pattern of a single-layer photoresist. . Further, by using a resist pattern having a bridge-type (bridge-type) cross-sectional structure in the track portion, it is possible to cope with a magnetoresistive head having a narrow track width.
【図1】本発明の一実施の形態の示す磁気抵抗効果ヘッ
ドの製造時における単層レジストの断面図である。FIG. 1 is a cross-sectional view of a single-layer resist in manufacturing a magnetoresistive head according to an embodiment of the present invention.
【図2】本発明を適用した磁気抵抗効果ヘッドの電極お
よびバイアス層の代表的なパターン形状の一例を示す平
面図である。FIG. 2 is a plan view showing an example of a typical pattern shape of an electrode and a bias layer of a magnetoresistive head to which the present invention is applied.
【図3】図2のA−A′線断面図である。FIG. 3 is a sectional view taken along line AA ′ of FIG. 2;
【図4】図2のB−B′線断面図である。FIG. 4 is a sectional view taken along line BB ′ of FIG. 2;
【図5】図4においてスパッタ膜の成膜後の状態を示す
断面図である。FIG. 5 is a cross-sectional view showing a state after a sputter film is formed in FIG.
【図6】リフトオフ後のスパッタ膜の成膜状態の一例を
示す拡大図である。FIG. 6 is an enlarged view showing an example of a film formation state of a sputtered film after lift-off.
1 基板 2 フォトレジスト 3 下磁性膜 4 絶縁膜 5 MR素子(磁気抵抗効果層) 6 スパッタ膜(電極層) 1 substrate 2 photoresist 3 lower magnetic film 4 insulating film 5 MR element (magnetoresistive layer) 6 sputter film (electrode layer)
Claims (2)
ク部がブリッジ形状をなすフォトレジストパターンを用
いたリフトオフ工程により形成することを特徴とする磁
気抵抗効果ヘッドの製造方法。1. A method for manufacturing a magnetoresistive head, wherein an electrode layer provided on a magnetoresistive layer is formed by a lift-off process using a photoresist pattern whose track portion has a bridge shape.
フォトレジストからなることを特徴とする請求項1記載
の磁気抵抗効果ヘッドの製造方法。2. The method according to claim 1, wherein the photoresist pattern comprises a single layer of photoresist.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9662196A JP2833579B2 (en) | 1996-04-18 | 1996-04-18 | Method of manufacturing magnetoresistive head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9662196A JP2833579B2 (en) | 1996-04-18 | 1996-04-18 | Method of manufacturing magnetoresistive head |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09282617A true JPH09282617A (en) | 1997-10-31 |
JP2833579B2 JP2833579B2 (en) | 1998-12-09 |
Family
ID=14169922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9662196A Expired - Fee Related JP2833579B2 (en) | 1996-04-18 | 1996-04-18 | Method of manufacturing magnetoresistive head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2833579B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6537732B2 (en) | 2000-02-02 | 2003-03-25 | Tdk Corporation | Resist pattern and method of forming same, method of forming thin-film pattern, and method of manufacturing micro device |
US7007374B2 (en) | 2002-08-09 | 2006-03-07 | Hitachi Global Storage Technologies Netherlands B.V. | Method of making a magnetic head |
-
1996
- 1996-04-18 JP JP9662196A patent/JP2833579B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6537732B2 (en) | 2000-02-02 | 2003-03-25 | Tdk Corporation | Resist pattern and method of forming same, method of forming thin-film pattern, and method of manufacturing micro device |
US7007374B2 (en) | 2002-08-09 | 2006-03-07 | Hitachi Global Storage Technologies Netherlands B.V. | Method of making a magnetic head |
US7710689B2 (en) | 2002-08-09 | 2010-05-04 | Hitachi Global Storage Technologies Netherlands B.V. | Narrow track read sensor |
Also Published As
Publication number | Publication date |
---|---|
JP2833579B2 (en) | 1998-12-09 |
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