JPH09275055A - Aligner - Google Patents
AlignerInfo
- Publication number
- JPH09275055A JPH09275055A JP8081300A JP8130096A JPH09275055A JP H09275055 A JPH09275055 A JP H09275055A JP 8081300 A JP8081300 A JP 8081300A JP 8130096 A JP8130096 A JP 8130096A JP H09275055 A JPH09275055 A JP H09275055A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- chamber
- measuring means
- outside air
- concentration measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体集積回路、
液晶表示素子等の微細パターンの形成に用いられる投影
露光装置に関するものである。[0001] The present invention relates to a semiconductor integrated circuit,
The present invention relates to a projection exposure apparatus used for forming a fine pattern such as a liquid crystal display element.
【０００２】[0002]
【従来の技術】半導体製造用クリーンルームでは、粒子
状汚染物質の除去のためにＨＥＰＡフィルターやＵＬＰ
Ａフィルターを用いた空気浄化システムが採用されてい
る。また、半導体製造工程で使用する装置、例えば紫外
域の光（ＵＶ光）又は遠紫外域の光（ＤＵＶ光）を使用
する露光装置の場合、雰囲気中にＮＨ4 +やＳＯｘのよう
なガス状不純物が存在すると、それが化学変化又は物理
変化を起こして、例えば（ＮＨ4）2ＳＯ4 の様な物質と
してレンズやミラー等の硝材表面に付着し、曇りを生じ
させたり透過率を低下させることがあった。2. Description of the Related Art In a semiconductor manufacturing clean room, a HEPA filter or ULP is used to remove particulate contaminants.
An air purification system using an A filter is adopted. Further, in the case of an apparatus used in a semiconductor manufacturing process, for example, an exposure apparatus that uses light in the ultraviolet range (UV light) or light in the deep ultraviolet range (DUV light), a gaseous state such as NH 4 + or SOx is contained in the atmosphere. If impurities are present, they undergo chemical or physical changes and attach to the glass material surface such as lenses and mirrors as a substance such as (NH 4 ) 2 SO 4 to cause fogging or reduce the transmittance. There was an occasion.
【０００３】したがって、ＵＶ光源やＤＵＶ光源を使用
する露光装置においては、光源からの照明光を継続的効
果的に使用するためにも、照射光の光路中を例えば窒素
やヘリウム等のＵＶ光やＤＵＶ光に不活性なガスで置換
するか、ガス状不純物を除去した環境ガス（外気）を供
給する必要があった。このため、従来は光路部を密閉型
とし、照明光に対して不活性なガスをガスボンベやスト
レージタンクのようなガス供給部より供給したり、露光
装置の使用環境中の大気を一度ケミカルフィルターのよ
うな不純物除去フィルターに通してガス状不純物を除去
してから照明系部に供給していた。Therefore, in an exposure apparatus using a UV light source or a DUV light source, in order to continuously and effectively use the illumination light from the light source, UV light such as nitrogen, helium, or the like is used in the optical path of the irradiation light. It was necessary to replace the DUV light with an inert gas or supply an environmental gas (outside air) from which gaseous impurities were removed. For this reason, conventionally, the optical path has been hermetically sealed, and an inert gas for the illumination light is supplied from a gas supply unit such as a gas cylinder or a storage tank, or the atmosphere in the environment of use of the exposure apparatus is once treated with a chemical filter. After passing through such an impurity removal filter to remove the gaseous impurities, they are supplied to the illumination system section.
【０００４】ケミカルフィルターは、ＨＥＰＡフィルタ
ーやＵＬＰＡフィルターでは除去できない雰囲気中のガ
ス状汚染物を除去できるフィルターであり、繊維状又は
粒状の活性炭を用いたもの、イオン交換樹脂によるイオ
ン交換反応を利用したもの、活性炭繊維に薬品を添着し
たもの等がある。イオン交換反応を利用したケミカルフ
ィルターの例としては荏原製作所製の「ＥＰＩＸ」があ
り、活性炭繊維に薬品を添着したケミカルフィルターの
例としては近藤工業製の「ＣＬＥＡＮ ＳＯＲＢ」など
がある。A chemical filter is a filter capable of removing gaseous pollutants in an atmosphere which cannot be removed by a HEPA filter or ULPA filter, and uses a fibrous or granular activated carbon or an ion exchange reaction by an ion exchange resin. Some include activated carbon fibers with chemicals attached. An example of a chemical filter utilizing an ion exchange reaction is "EPIX" manufactured by EBARA CORPORATION, and an example of a chemical filter in which a chemical is attached to activated carbon fiber is "CLEAN SORB" manufactured by Kondo Kogyo.
【０００５】また、基板にパターンを形成するホトリソ
グラフィー工程で使用されるレジストとして化学増幅型
レジストがある。化学増幅型レジストは、一般に樹脂、
感光性の酸発生剤、溶解促進剤あるいは架橋剤からな
る。そして、露光によって酸発生剤から酸が発生し、露
光後のベーク時にその酸がポジ型の場合は高分子鎖を切
断する分解促進剤の触媒として、ネガ型の場合は高分子
鎖を架橋させる架橋剤の触媒として働き、現像によって
パターンを形成するものである。溶解促進剤を用いたも
のはポジタイプのパターンを形成し、架橋剤を用いたも
のはネガタイプのパターンを形成する。ポジ型の化学増
幅型レジストの例としてはフジハント社製の「ＦＨ−Ｅ
Ｘ１」があり、ネガ型の例としてはシプレイ社製の「Ｘ
Ｐ」がある。There is a chemically amplified resist as a resist used in a photolithography process for forming a pattern on a substrate. Chemically amplified resist is generally a resin,
It is composed of a photosensitive acid generator, a dissolution accelerator or a crosslinking agent. Then, an acid is generated from the acid generator upon exposure to light, and as a catalyst for a decomposition accelerator that cleaves the polymer chain when the acid is a positive type during baking after exposure, it crosslinks the polymer chain when a negative type. It functions as a catalyst for a cross-linking agent and forms a pattern by development. The one using the dissolution promoter forms a positive type pattern, and the one using the crosslinking agent forms a negative type pattern. An example of a positive chemically amplified resist is "FH-E" manufactured by Fuji Hunt Co., Ltd.
"X1", and an example of the negative type is "X" made by Shipley.
P ".
【０００６】この化学増幅型レジストを使用するとき、
基板雰囲気中にアンモニアやアミン類などの塩基性のガ
ス状不純物が存在すると、露光から露光後ベーク時まで
の間に、酸発生剤から発生した酸とこれらのガス状不純
物が中和反応を起こしてしまうために、感度低下を起こ
し、特にポジ型レジストの場合には表面難溶化層を形成
してパターン転写に悪影響を及ぼす等の問題を生じる。
これらのガス状不純物による悪影響を回避するために、
化学増幅型レジストが塗布された基板の、塗布もしくは
露光から露光後ベークまでの工程の雰囲気を不純物の含
有していない清浄なガスで置換することが行われてい
た。When using this chemically amplified resist,
If basic gaseous impurities such as ammonia and amines are present in the substrate atmosphere, the acid generated from the acid generator and these gaseous impurities cause a neutralization reaction between the exposure and the post-exposure bake. As a result, the sensitivity is lowered, and particularly in the case of a positive type resist, a surface insolubilizing layer is formed to adversely affect the pattern transfer.
In order to avoid the adverse effects of these gaseous impurities,
The atmosphere of the steps from coating or exposure to baking after exposure of the substrate coated with the chemically amplified resist has been replaced with a clean gas containing no impurities.
【０００７】[0007]
【発明が解決しようとする課題】ガス状不純物の除去手
段として一般に使用されているケミカルフィルターは、
図３に示すように、ガス状不純物を除去するにしたがっ
て時間とともに不純物除去効率が低下するという性質が
ある。不純物除去効率の低下の度合いは、ケミカルフィ
ルターを使用する環境中の不純物の濃度や湿度等によっ
て異なり、環境中のガス状不純物濃度は半導体製造工場
の稼働率等によっても変動する。The chemical filter generally used as a means for removing gaseous impurities is
As shown in FIG. 3, as the gaseous impurities are removed, the impurity removal efficiency decreases with time. The degree of decrease in impurity removal efficiency depends on the concentration of impurities in the environment where the chemical filter is used, the humidity, and the like, and the concentration of gaseous impurities in the environment also changes depending on the operating rate of the semiconductor manufacturing plant.
【０００８】不純物除去フィルターは、除去効率が低下
してきたら交換する必要がある。例えば、フィルターの
不純物除去効率がある一定の効率まで低下したときをフ
ィルターの寿命と定め、この寿命前にフィルターを交換
する必要がある。しかし、フィルターの劣化度は前述の
ように使用環境によって異なり、使用環境中の不純物濃
度も一定ではないために、フィルターの寿命到達時を前
もって正確に知ることは困難である。The impurity removal filter needs to be replaced when the removal efficiency decreases. For example, the life of the filter is defined when the impurity removal efficiency of the filter is lowered to a certain level, and the filter needs to be replaced before the life. However, the degree of deterioration of the filter varies depending on the use environment as described above, and the impurity concentration in the use environment is not constant, so that it is difficult to know exactly when the filter reaches the end of its life.
【０００９】不純物除去フィルターの除去効率を知るに
は、一定期間ごとにガス濃度測定手段を露光装置に設置
して測定を行う必要がある。すると、測定手段設置中も
しくは測定中は露光装置の使用を停止しなければならな
い場合もあり、生産性の低下を招くことがある。また、
不純物除去フィルターを設置した露光装置が複数台ある
場合には、露光装置の設置場所によって環境中の不純物
濃度が異なり、フィルターの劣化度も異なるため、全て
の露光装置について個別に不純物ガスの濃度測定を行う
必要があり、作業が極めて煩雑であるとともに生産性の
低下を招くことがある。In order to know the removal efficiency of the impurity removal filter, it is necessary to install the gas concentration measuring means in the exposure device and perform the measurement at regular intervals. Then, it may be necessary to stop the use of the exposure apparatus during the installation of the measuring means or during the measurement, which may lead to a decrease in productivity. Also,
When there are multiple exposure equipments equipped with impurity removal filters, the impurity concentration in the environment differs depending on the location where the exposure equipments are installed, and the degree of deterioration of the filters also differs. Therefore, the work is extremely complicated and the productivity may be reduced.
【００１０】また、露光装置の使用環境において何らか
の原因でガス状不純物濃度が急激に上昇して高濃度にな
った場合、たとえケミカルフィルターを通してから外気
を露光装置内に導入したとしても高濃度のガス状不純物
を完全に除去することができず、露光装置の内部を汚染
したり、使用中の化学増幅型レジスト表面に難溶化層が
形成されるなどの危険があった。Further, when the concentration of gaseous impurities suddenly rises to a high concentration for some reason in the environment of use of the exposure apparatus, even if the outside air is introduced into the exposure apparatus after passing through the chemical filter, the high concentration of gas However, there is a danger that the particulate impurities cannot be completely removed, the inside of the exposure apparatus is contaminated, and a hardly soluble layer is formed on the surface of the chemically amplified resist during use.
【００１１】本発明は、このような従来技術の問題点に
鑑みてなされたものであり、露光装置に設置されている
ケミカルフィルター等の不純物除去フィルターの寿命を
正確に検知し、交換又はクリーニング等のメンテナンス
を適切に行うことができるようにすることを目的とす
る。また、本発明は、装置使用環境中の不純物濃度が急
上昇したとき、外気とともにその不純物が装置内に取り
込まれることを回避する手段を提供することを目的とす
る。The present invention has been made in view of the above problems of the prior art, and accurately detects the life of an impurity removal filter such as a chemical filter installed in an exposure apparatus, and replaces or cleans it. The purpose is to be able to properly perform maintenance of. Another object of the present invention is to provide a means for avoiding the impurities from being taken into the device together with the outside air when the impurity concentration in the environment where the device is used suddenly rises.
【００１２】[0012]
【課題を解決するための手段】上記目的の達成のため本
発明では、不純物除去フィルターの上流側と下流側ある
いは露光装置内の任意の場所に不純物ガス濃度測定手段
を設置する。このことにより不純物除去フィルターの寿
命を各フィルター毎にもしくは露光装置全体で管理する
ことができ、装置使用者にフィルターの寿命が近いこと
を知らせることが可能となる。In order to achieve the above object, in the present invention, the impurity gas concentration measuring means is installed on the upstream side and the downstream side of the impurity removal filter or at any place in the exposure apparatus. As a result, the life of the impurity removal filter can be controlled for each filter or for the exposure apparatus as a whole, and the user of the apparatus can be notified that the life of the filter is near.
【００１３】また、環境中の不純物ガス濃度を監視し、
高濃度の不純物ガスが検出された場合、回避手段をとる
ことで露光装置の汚染及びレジストの表面難溶化を未然
に防ぐ。高濃度の不純物ガスの検出を警報等によって報
知するようにすれば、半導体工場内の異常を知ることが
可能となる。Also, monitoring the impurity gas concentration in the environment,
When a high-concentration impurity gas is detected, avoidance measures are taken to prevent contamination of the exposure apparatus and insolubility of the resist surface. If the detection of high-concentration impurity gas is notified by an alarm or the like, it becomes possible to know an abnormality in the semiconductor factory.
【００１４】すなわち、本発明は、紫外域又は遠紫外域
の光を射出する光源と、光源から射出された光をマスク
に入射させる照明系部と、マスクの像を感光性基板上に
形成する露光部と、装置の一部又は全部を収容するチャ
ンバーと、チャンバー内に外気を導入する外気導入手段
と、チャンバー内に導入される外気もしくはチャンバー
内を循環するガスに含まれるガス状不純物を除去するた
めの不純物除去フィルターとを含む露光装置において、
不純物除去フィルターの上流側及び下流側にそれぞれ配
置された不純物濃度測定手段と、不純物除去フィルター
の上流側に配置された不純物濃度測定手段の測定値と下
流側に配置された不純物濃度測定手段の測定値から不純
物除去フィルターの寿命を推定する手段とを備えること
を特徴とする。That is, according to the present invention, a light source that emits light in the ultraviolet region or far ultraviolet region, an illumination system portion that makes the light emitted from the light source enter a mask, and an image of the mask is formed on a photosensitive substrate. An exposure unit, a chamber that houses a part or all of the apparatus, an outside air introduction unit that introduces outside air into the chamber, and a gaseous impurity contained in the outside air introduced into the chamber or the gas circulating in the chamber. In an exposure apparatus including an impurity removal filter for
Impurity concentration measuring means respectively arranged on the upstream side and the downstream side of the impurity removing filter, a measurement value of the impurity concentration measuring means arranged on the upstream side of the impurity removing filter and a measurement of the impurity concentration measuring means arranged on the downstream side. Means for estimating the life of the impurity removal filter from the value.
【００１５】不純物除去フィルターがチャンバー内に導
入される外気に含まれるガス状不純物を除去するための
ものであるとき、その不純物除去フィルターの上流側に
配置された不純物濃度測定手段が所定濃度以上のガス状
不純物を検出したとき外気導入手段の運転を停止させる
ように構成すると、高濃度のガス状不純物が不純物除去
フィルターを通過して露光装置内に入り込み、装置を汚
染する事態を回避することができる。When the impurity removal filter is for removing gaseous impurities contained in the outside air introduced into the chamber, the impurity concentration measuring means arranged upstream of the impurity removal filter has a predetermined concentration or more. When the operation of the outside air introducing means is stopped when the gaseous impurities are detected, it is possible to avoid a situation in which high-concentration gaseous impurities pass through the impurity removal filter and enter the exposure apparatus to contaminate the apparatus. it can.
【００１６】また、本発明は、紫外域又は遠紫外域の光
を射出する光源と、光源から射出された光をマスクに入
射させる照明系部と、マスクの像を感光性基板上に形成
する露光部と、装置の一部又は全部を収容するチャンバ
ーと、チャンバー内に外気を導入する外気導入手段と、
チャンバー内に導入される外気に含まれるガス状不純物
を除去するための不純物除去フィルターとを含む露光装
置において、外気導入手段の上流側に不純物濃度測定手
段が配置され、不純物濃度測定手段が所定濃度以上のガ
ス状不純物を検出したとき外気導入手段の運転を停止さ
せることを特徴とする。Further, according to the present invention, a light source for emitting light in the ultraviolet region or the far ultraviolet region, an illumination system portion for making the light emitted from the light source incident on a mask, and an image of the mask are formed on a photosensitive substrate. An exposure unit, a chamber for accommodating a part or all of the apparatus, and an outside air introducing unit for introducing outside air into the chamber,
In an exposure apparatus including an impurity removal filter for removing gaseous impurities contained in the outside air introduced into the chamber, an impurity concentration measuring means is arranged upstream of the outside air introducing means, and the impurity concentration measuring means has a predetermined concentration. It is characterized in that the operation of the outside air introducing means is stopped when the above gaseous impurities are detected.
【００１７】不純物濃度測定手段は、ＮＨ4 +及びＳＯ4
2-の少なくとも一方の濃度を測定するもの、あるいはシ
ロキサン等の炭化水素系有機物の濃度を測定するものと
することができる。Impurity concentration measuring means are NH 4 + and SO 4
The concentration of at least one of 2- can be measured, or the concentration of a hydrocarbon-based organic substance such as siloxane can be measured.
【００１８】[0018]
【発明の実施の形態】以下、図面を参照して本発明を詳
細に説明する。図２は、露光装置の一例を示す概念図で
ある。ＤＵＶ光を射出する例えばエキシマレーザーやＨ
ｇランプのような光源１からの照射光は、ミラー２で反
射され、フライアイレンズ等のオプチカルインテグレー
タやコンデンサーレンズ等の照度均一化手段、各種レン
ズやミラー等からなる照明光学系３によって均一な照明
光に整形される。照明光学系３で均一化された照明光
は、再びミラー２によって光路を折り曲げられ、パター
ンが形成されたレチクル４を均一に照明する。レチクル
４のパターンは投影レンズ５によって、レジストの塗布
されたウエハ等の感光性基板（以下、ウエハという）６
上に像を結び、転写される。ウエハ６は、２次元方向に
移動可能なＸＹステージ７上に載置されており、露光前
及び露光後のウエハはウエハ待機位置８で待機する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. FIG. 2 is a conceptual diagram showing an example of the exposure apparatus. For example, excimer laser or H that emits DUV light
Light emitted from a light source 1 such as a g-lamp is reflected by a mirror 2 and uniformized by an illuminance equalizing means such as an optical integrator such as a fly-eye lens and a condenser lens, and an illumination optical system 3 including various lenses and mirrors. Shaped into illumination light. The illumination light uniformized by the illumination optical system 3 has its optical path bent again by the mirror 2, and uniformly illuminates the reticle 4 on which the pattern is formed. The pattern of the reticle 4 is formed by a projection lens 5 and a photosensitive substrate (hereinafter referred to as a wafer) 6 such as a resist-coated wafer.
An image is formed on it and transferred. The wafer 6 is mounted on an XY stage 7 that is movable in two dimensions, and the wafer before and after exposure stands by at a wafer standby position 8.
【００１９】図１に、本発明の実施の態様の概略図を示
す。図２で説明した露光装置はチャンバー９によって覆
われ、内部は空調手段１０によって一定の温度に保たれ
ている。チャンバー９の外気導入口からは圧送ファン１
２によって外気が導入されており、チャンバー９内の雰
囲気は圧送ファン１１によって循環している。外気導入
口には不純物除去部１３ａが設置されており、そこで外
気中の不純物が除去される。チャンバー９内にも不純物
除去部１３ｂが設けられ、チャンバー内を循環するガス
中の不純物を除去している。チャンバー９は、図１では
露光装置全体を収容しているが、露光装置の一部、例え
ば照明光学系を収容するものであってもよい。FIG. 1 shows a schematic diagram of an embodiment of the present invention. The exposure apparatus described with reference to FIG. 2 is covered with a chamber 9, and the inside is kept at a constant temperature by an air conditioner 10. From the outside air inlet of the chamber 9, the pressure feeding fan 1
The outside air is introduced by 2 and the atmosphere in the chamber 9 is circulated by the pressure-feeding fan 11. An impurity removal unit 13a is installed at the outside air inlet, where impurities in the outside air are removed. An impurity removing unit 13b is also provided in the chamber 9 to remove impurities in the gas circulating in the chamber. Although the chamber 9 houses the entire exposure apparatus in FIG. 1, it may house a part of the exposure apparatus, for example, an illumination optical system.
【００２０】不純物除去部１３ａ，１３ｂには、ガス状
の不純物を除去するフィルターが設けられている。この
ガス状の不純物を除去する不純物除去フィルターとして
は、繊維状又は粒状の活性炭を用いたケミカルフィルタ
ー、イオン交換樹脂によるイオン交換反応を利用したケ
ミカルフィルター、活性炭繊維に薬品を添着したケミカ
ルフィルター等、各種のケミカルフィルター、あるいは
正に帯電した電極と負に帯電した電極間にガスを通気し
て不純物ガスを電極に吸着させて除去するタイプの静電
吸着反応を利用したフィルター等を採用することができ
る。The impurity removing parts 13a and 13b are provided with filters for removing gaseous impurities. As the impurity removal filter for removing the gaseous impurities, a chemical filter using fibrous or granular activated carbon, a chemical filter utilizing an ion exchange reaction by an ion exchange resin, a chemical filter impregnated with a chemical on activated carbon fiber, and the like, It is possible to employ various types of chemical filters, or filters that use an electrostatic adsorption reaction of a type in which gas is passed between the positively charged electrode and the negatively charged electrode to adsorb and remove the impurity gas from the electrode. it can.
【００２１】例えば炭素繊維に化学薬品を添着した近藤
工業製「ＣＬＥＡＮ ＳＯＲＢ」のアルカリ系ガス除去
用ケミカルフィルターを用いるとアンモニア等の塩基性
ガスを除去することができ、イオウ系ガス除去用ケミカ
ルフィルターを用いるとＳＯ2 ガスを除去することがで
きる。アンモニアあるいはＳＯｘのいずれか一方又は双
方を完全に除去することができれば、（ＮＨ4）2ＳＯ4
のような物質が硝材表面に付着して光学部材を曇らせる
ことがない。また、活性炭フィルターを用いるとシロキ
サンやシラノール等の炭化水素系有機物を除去して、酸
化ケイ素のような物質が硝材表面に付着して光学部材を
曇らせるのを防止できる。For example, when a chemical filter for removing alkaline gas such as "CLEAN SORB" manufactured by Kondo Kogyo Co., Ltd. in which a chemical agent is attached to carbon fiber, a basic gas such as ammonia can be removed and a chemical filter for removing sulfur gas is Can be used to remove SO 2 gas. If either or both of ammonia and SOx can be completely removed, (NH 4 ) 2 SO 4
Such substances do not adhere to the surface of the glass material and cloud the optical member. Further, by using an activated carbon filter, it is possible to remove hydrocarbon organic substances such as siloxane and silanol, and prevent substances such as silicon oxide from adhering to the surface of the glass material and fogging the optical member.
【００２２】外気導入口に設置された不純物除去部１３
ａの上流側（すなわち露光装置の設置環境中）及び下流
側には夫々不純物ガスの濃度測定手段１４ａ，１４ｂが
設置され、チャンバー内に設置された不純物除去部１３
ｂの上流側及び下流側にも夫々不純物ガスの濃度測定手
段１４ｃ，１４ｄが配置されている。濃度測定手段１４
ａ，１４ｂ，１４ｃ，１４ｄの測定値は演算部１５に送
られ、演算部１５ではこれらの測定値をもとに不純物ガ
ス除去部１３ａ，１３ｂに設置された不純物除去フィル
ターの不純物除去効率の計測及び寿命の推定を行う。Impurity remover 13 installed at the outside air inlet
Impurity gas concentration measuring means 14a and 14b are installed on the upstream side (that is, in the installation environment of the exposure apparatus) and the downstream side of a, respectively, and the impurity removal unit 13 installed in the chamber.
Impurity gas concentration measuring means 14c and 14d are arranged on the upstream side and the downstream side of b, respectively. Concentration measuring means 14
The measured values of a, 14b, 14c, and 14d are sent to the arithmetic unit 15, and the arithmetic unit 15 measures the impurity removal efficiency of the impurity removal filters installed in the impurity gas removal units 13a and 13b based on these measured values. And estimate the service life.
【００２３】不純物濃度測定手段１４ａ〜１４ｄはどの
様なものでもよく、例えば水晶振動子上に脂質分子膜に
類似した合成２分子膜を形成し、合成２分子膜に付着し
た不純物の量を水晶振動子の振動変化として電気的に検
出する手段を用いることができる。多種類の不純物が対
象となる場合には、不純物濃度測定手段も各不純物に適
したものを複数個用意することが必要である。あるい
は、濃度測定場所のガスを定期的にサンプリングし、そ
のガス中の成分をガスクロマトグラフィーや分光測光法
等で分析することによって不純物濃度を検出してもよ
い。Any means may be used for the impurity concentration measuring means 14a to 14d. For example, a synthetic bimolecular film similar to a lipid molecular film is formed on a crystal oscillator, and the amount of impurities attached to the synthetic bimolecular film is measured by a crystal. A means for electrically detecting the vibration change of the vibrator can be used. When many kinds of impurities are targeted, it is necessary to prepare a plurality of impurity concentration measuring means suitable for each impurity. Alternatively, the impurity concentration may be detected by periodically sampling the gas at the concentration measurement location and analyzing the components in the gas by gas chromatography, spectrophotometry, or the like.
【００２４】次に、不純物除去フィルターの寿命推定方
法について説明する。不純物除去フィルターの不純物除
去効率は、フィルター内に蓄積される不純物の量が増え
るにつれ、図３に示すように時間とともに低下する。演
算部１５では、次式のように、各不純物除去部におい
て、その下流側（フィルター通過後）で計測された不純
物ガスの濃度値を上流側（フィルター通過前）で計測さ
れた濃度値で除算し、それを測定時点でのその不純物除
去部の不純物除去効率とする。 除去効率（％）＝（下流の不純物濃度）／（上流の不純
物濃度）Next, a method of estimating the life of the impurity removal filter will be described. The impurity removal efficiency of the impurity removal filter decreases with time as the amount of impurities accumulated in the filter increases, as shown in FIG. In the calculation unit 15, in each impurity removal unit, the concentration value of the impurity gas measured on the downstream side (after passing through the filter) is divided by the concentration value measured on the upstream side (before passing through the filter), as in the following equation. Then, let it be the impurity removal efficiency of the impurity removal part at the time of measurement. Removal efficiency (%) = (downstream impurity concentration) / (upstream impurity concentration)
【００２５】そして、除去効率がある値まで低下した時
点、例えば９０％になった時点を不純物除去部の寿命と
定める。演算部１５は、不純物濃度測定手段によって測
定された測定値によって連続的あるいは定期的に各々の
不純物除去部１３ａ，１３ｂの除去効率を演算し、除去
効率が次第に低下してきて９０％に近づいた時点、例え
ば９１％になったところで、装置操作部１６に不純物ガ
ス除去部１３の効率低下が分かるように表示する。装置
のオペレータは、装置操作部１６への表示により不純物
ガス除去部の寿命が近いことを知ることができる。報知
手段は、ディスプレイを用いた視覚的な表示、音による
表示、合成音声による表示等いずれの表示方法を用いて
もよい。Then, the time when the removal efficiency drops to a certain value, for example, the time when it reaches 90%, is defined as the life of the impurity removing portion. The calculation unit 15 continuously or regularly calculates the removal efficiency of each of the impurity removal units 13a and 13b based on the measurement value measured by the impurity concentration measurement unit, and when the removal efficiency gradually decreases to approach 90%. For example, when it reaches 91%, the device operation unit 16 is displayed so that the efficiency of the impurity gas removal unit 13 is reduced. The operator of the apparatus can know from the display on the apparatus operation unit 16 that the life of the impurity gas removing unit is approaching. The notification means may use any display method such as a visual display using a display, a sound display, and a synthetic voice display.
【００２６】不純物濃度測定手段１４ｅ，１４ｆ，１４
ｇは、不純物除去部１３ａ，１３ｂに関連した位置以外
にも、ＸＹステージ６の付近、ウエハ待機位置８、照明
系３の内部等、不純物汚染による影響が懸念される位置
に設置することができる。Impurity concentration measuring means 14e, 14f, 14
In addition to the positions related to the impurity removing units 13a and 13b, g can be installed at a position where the influence of impurity contamination is concerned, such as in the vicinity of the XY stage 6, the wafer standby position 8, the inside of the illumination system 3, and the like. .
【００２７】また、汚染が懸念される装置内の位置にお
ける不純物濃度が、予め定められた濃度以上になった時
点を不純物除去部１３ａ，１３ｂの寿命と定めることも
できる。この場合、各位置での不純物濃度測定値が予め
定められた値になった時点か、もしくはその値に近づい
てきた時点でそれを報知して、不純物除去フィルターの
交換時期を知らせるができる。不純物濃度測定値が寿命
点を上回った場合には、装置を停止させるなどして装置
の汚染を防止するようにしてもよい。Further, the time when the impurity concentration at a position in the device where contamination is concerned becomes equal to or higher than a predetermined concentration can be defined as the life of the impurity removing parts 13a and 13b. In this case, when the impurity concentration measurement value at each position reaches a predetermined value or approaches the value, it can be notified and the replacement time of the impurity removal filter can be notified. When the measured impurity concentration exceeds the life point, the device may be stopped to prevent the device from being contaminated.
【００２８】チャンバー９の外部に不純物濃度測定手段
を設置して外気中の不純物濃度を測定するようにする
と、何らかの不都合により外気中の不純物濃度が異常に
高くなった時に装置使用環境の異常として報知すること
ができる。外気中の不純物ガス濃度が異常に高くなった
場合、たとえ不純物除去部を通してから外気をチャンバ
ー９内に導入しているとはいえチャンバー９内が汚染さ
れる可能性があるため、外気導入部の圧送ファン１２を
止めて外気導入を停止することで、装置の汚染を未然に
防止することが好ましい。図１の例においては、外気導
入部に設置された不純物除去手段１３ａの上流側に配置
された不純物濃度測定手段１４ａを、装置外部の不純物
濃度測定手段として兼用してもよい。When the impurity concentration measuring means is installed outside the chamber 9 to measure the impurity concentration in the outside air, when the impurity concentration in the outside air becomes abnormally high due to some inconvenience, it is notified as an abnormality in the environment in which the device is used. can do. When the concentration of the impurity gas in the outside air becomes abnormally high, the inside of the chamber 9 may be contaminated even though the outside air is introduced into the chamber 9 after passing through the impurity removing portion. It is preferable to prevent the contamination of the device by stopping the pressure-feeding fan 12 and stopping the introduction of the outside air. In the example of FIG. 1, the impurity concentration measuring means 14a arranged on the upstream side of the impurity removing means 13a installed in the outside air introducing section may also be used as the impurity concentration measuring means outside the apparatus.
【００２９】[0029]
【発明の効果】以上のように本発明によれば、露光装置
に不純物濃度測定手段を設置して装置内部及び使用環境
の不純物濃度を測定することで、不純物除去フィルター
の寿命管理を適切に行うことができる。また、装置外部
の不純物濃度の管理が行えるので装置設置環境に異常が
発生した場合に速やかに対応することができる。As described above, according to the present invention, the impurity concentration measuring means is installed in the exposure apparatus to measure the impurity concentration in the inside of the apparatus and in the use environment, thereby properly managing the life of the impurity removal filter. be able to. Further, since the impurity concentration outside the device can be controlled, it is possible to promptly deal with any abnormality in the device installation environment.
【図１】本発明による露光装置の一例を示す概略図。FIG. 1 is a schematic diagram showing an example of an exposure apparatus according to the present invention.
【図２】露光装置の概念図。FIG. 2 is a conceptual diagram of an exposure apparatus.
【図３】ケミカルフィルターの不純物除去効率の時間変
化を示す図。FIG. 3 is a view showing a time change of impurity removal efficiency of a chemical filter.
１…光源部、２…ミラー、３…照明系部、４…レチク
ル、５…投影レンズ、６…ＸＹステージ、７…ウエハ、
８…ウエハ待機部、９…チャンバー、１０…空調手段、
１１…圧送ファン、１２…圧送ファン、１３…不純物除
去部、１４…不純物濃度測定手段、１５…演算部、１６
…装置操作部1 ... Light source part, 2 ... Mirror, 3 ... Illumination system part, 4 ... Reticle, 5 ... Projection lens, 6 ... XY stage, 7 ... Wafer,
8 ... Wafer standby unit, 9 ... Chamber, 10 ... Air conditioning unit,
11 ... Pressure feeding fan, 12 ... Pressure feeding fan, 13 ... Impurity removing section, 14 ... Impurity concentration measuring means, 15 ... Calculation section, 16
... Device operation unit
Claims (5)
と、前記光源から射出された光をマスクに入射させる照
明系部と、前記マスクの像を感光性基板上に形成する露
光部と、装置の一部又は全部を収容するチャンバーと、
前記チャンバー内に外気を導入する外気導入手段と、前
記チャンバー内に導入される外気もしくは前記チャンバ
ー内を循環するガスに含まれるガス状不純物を除去する
ための不純物除去フィルターとを含む露光装置におい
て、 前記不純物除去フィルターの上流側及び下流側にそれぞ
れ配置された不純物濃度測定手段と、前記不純物除去フ
ィルターの上流側に配置された不純物濃度測定手段の測
定値と下流側に配置された不純物濃度測定手段の測定値
から前記不純物除去フィルターの寿命を推定する手段と
を備えることを特徴とする露光装置。1. A light source that emits light in the ultraviolet range or far-ultraviolet range, an illumination system section that makes the light emitted from the light source enter a mask, and an exposure section that forms an image of the mask on a photosensitive substrate. And a chamber that houses part or all of the device,
In an exposure apparatus including an external air introduction unit for introducing external air into the chamber, and an impurity removal filter for removing gaseous impurities contained in the external air introduced into the chamber or a gas circulating in the chamber, Impurity concentration measuring means respectively arranged on the upstream side and the downstream side of the impurity removing filter, and a measured value of the impurity concentration measuring means arranged on the upstream side of the impurity removing filter and an impurity concentration measuring means arranged on the downstream side. And a means for estimating the life of the impurity removal filter from the measured value of 1.
まれるガス状不純物を除去するための不純物除去フィル
ターを備え、該不純物除去フィルターの上流側に配置さ
れた不純物濃度測定手段が所定濃度以上のガス状不純物
を検出したとき前記外気導入手段の運転を停止させるこ
とを特徴とする請求項１記載の露光装置。2. An impurity removal filter for removing gaseous impurities contained in the outside air introduced into the chamber, wherein the impurity concentration measuring means arranged upstream of the impurity removal filter has a predetermined concentration or more. 2. The exposure apparatus according to claim 1, wherein the operation of the outside air introducing means is stopped when a gaseous impurity is detected.
と、前記光源から射出された光をマスクに入射させる照
明系部と、前記マスクの像を感光性基板上に形成する露
光部と、装置の一部又は全部を収容するチャンバーと、
前記チャンバー内に外気を導入する外気導入手段と、前
記チャンバー内に導入される外気に含まれるガス状不純
物を除去するための不純物除去フィルターとを含む露光
装置において、 前記外気導入手段の上流側に不純物濃度測定手段が配置
され、前記不純物濃度測定手段が所定濃度以上のガス状
不純物を検出したとき前記外気導入手段の運転を停止さ
せることを特徴とする露光装置。3. A light source that emits light in the ultraviolet region or far ultraviolet region, an illumination system unit that makes the light emitted from the light source enter a mask, and an exposure unit that forms an image of the mask on a photosensitive substrate. And a chamber that houses part or all of the device,
In an exposure apparatus including an outside air introducing unit for introducing outside air into the chamber and an impurity removing filter for removing a gaseous impurity contained in the outside air introduced into the chamber, an exposure device is provided on the upstream side of the outside air introducing unit. An exposure apparatus in which an impurity concentration measuring means is disposed, and when the impurity concentration measuring means detects a gaseous impurity having a predetermined concentration or higher, the operation of the outside air introducing means is stopped.
ＳＯ4 2-の少なくとも一方の濃度を測定するものである
ことを特徴とする請求項１、２又は３記載の露光装置。4. The exposure apparatus according to claim 1, 2 or 3, wherein said impurity concentration measuring means measures the concentration of at least one of NH 4 + and SO 4 2− .
有機物の濃度を測定するものであることを特徴とする請
求項１、２又は３記載の露光装置。5. The exposure apparatus according to claim 1, wherein the impurity concentration measuring means measures a concentration of a hydrocarbon organic substance.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08130096A JP3658852B2 (en) | 1996-04-03 | 1996-04-03 | Exposure equipment |
| KR1019970012127A KR100542414B1 (en) | 1996-03-27 | 1997-03-27 | Exposure Equipment and Air Conditioning Equipment |
| US09/266,873 US6535270B1 (en) | 1996-03-27 | 1999-03-12 | Exposure apparatus and air-conditioning apparatus for use with exposure apparatus |
| US10/237,133 US20030035087A1 (en) | 1996-03-27 | 2002-09-09 | Exposure apparatus and air-conditioning apparatus for use with exposure apparatus |
| US11/071,106 US20050185156A1 (en) | 1996-03-27 | 2005-03-04 | Exposure apparatus and air-conditioning apparatus for use with exposure apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08130096A JP3658852B2 (en) | 1996-04-03 | 1996-04-03 | Exposure equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09275055A true JPH09275055A (en) | 1997-10-21 |
| JP3658852B2 JP3658852B2 (en) | 2005-06-08 |
Family
ID=13742551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08130096A Expired - Fee Related JP3658852B2 (en) | 1996-03-27 | 1996-04-03 | Exposure equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3658852B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001011665A1 (en) * | 1999-08-05 | 2001-02-15 | Nikon Corporation | Optical device for illumination, exposure device, container of optical part, method of assembling exposure device, method of evaluating material, and method and device for evaluating filter |
| JP2002261001A (en) * | 2000-12-09 | 2002-09-13 | Carl-Zeiss-Stiftung Trading As Carl Zeiss | Method and apparatus for decontaminating euv lithographic unit |
| JP2002535703A (en) * | 1999-01-15 | 2002-10-22 | ドナルドソン カンパニー，インコーポレイティド | Chemical filtering to optimize gas light transmission |
| JP2008224485A (en) * | 2007-03-14 | 2008-09-25 | Espec Corp | Siloxane endurance testing machine |
| JP2010192793A (en) * | 2009-02-20 | 2010-09-02 | Canon Inc | Aligner and outdoor air introduction unit, and manufacturing method of device using the same |
| WO2012131944A1 (en) * | 2011-03-30 | 2012-10-04 | 富士通株式会社 | Atmospheric environment measuring device, atmospheric environment measuring method and atmospheric environment measuring system |
| JP2016127107A (en) * | 2014-12-26 | 2016-07-11 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method and storage medium |
-
1996
- 1996-04-03 JP JP08130096A patent/JP3658852B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002535703A (en) * | 1999-01-15 | 2002-10-22 | ドナルドソン カンパニー，インコーポレイティド | Chemical filtering to optimize gas light transmission |
| WO2001011665A1 (en) * | 1999-08-05 | 2001-02-15 | Nikon Corporation | Optical device for illumination, exposure device, container of optical part, method of assembling exposure device, method of evaluating material, and method and device for evaluating filter |
| JP2002261001A (en) * | 2000-12-09 | 2002-09-13 | Carl-Zeiss-Stiftung Trading As Carl Zeiss | Method and apparatus for decontaminating euv lithographic unit |
| JP2008224485A (en) * | 2007-03-14 | 2008-09-25 | Espec Corp | Siloxane endurance testing machine |
| JP2010192793A (en) * | 2009-02-20 | 2010-09-02 | Canon Inc | Aligner and outdoor air introduction unit, and manufacturing method of device using the same |
| WO2012131944A1 (en) * | 2011-03-30 | 2012-10-04 | 富士通株式会社 | Atmospheric environment measuring device, atmospheric environment measuring method and atmospheric environment measuring system |
| JPWO2012131944A1 (en) * | 2011-03-30 | 2014-07-24 | 富士通株式会社 | Atmospheric environment measuring device, atmospheric environment measuring method, and atmospheric environment measuring system |
| JP5742932B2 (en) * | 2011-03-30 | 2015-07-01 | 富士通株式会社 | Atmospheric environment measuring device, atmospheric environment measuring method, and atmospheric environment measuring system |
| US9395334B2 (en) | 2011-03-30 | 2016-07-19 | Fujitsu Limited | Atmospheric environment measuring apparatus, atmospheric environment measuring method and atmospheric environment measuring system |
| JP2016127107A (en) * | 2014-12-26 | 2016-07-11 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method and storage medium |
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|---|---|
| JP3658852B2 (en) | 2005-06-08 |
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