JPH09260264A - Scanning type exposure device and production of device using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To facilitate a projection exposure by a high resolving power and moreover, on a large screen by a method wherein surface position information, such as the position in the direction of the optical axis of a projection optical system on the surface of a wafer and the wafer surface's slant which is formed with the optical axis, is detected with high accuracy. SOLUTION: Luminous fluxes from 6 pinholes 12a... of a slit member 12, which are made to pass through a lens system 13, are incident upon measuring points CU1 to CU3 and CD1 to CD3, which are independent of each other within a patterned region, by light illuminating means DU1 and DD1 and the images 12c and 12d of the pinholes are formed. Then, the images 12c and 12d of the pinholes, which are formed on the surface of a wafer 4, are reformed on a prescribed surface by elements 12 to 19 of an image-reforming system. Information on the positions of the images 12c and 12d formed on the detecting surface 19a in such a way is found by the photoelectric conversion means 19 and a surface position detecting system 26, whereby surface position information, such as the position in the direction AX of the optical axis of a projection optical system on the surface of the wafer 4 and the wafer surface's slant which is formed with the optical axis, is found.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning exposure apparatus and a device manufacturing method using the same, and relates to an IC, LSI,
In an apparatus for manufacturing a device such as a CCD, a magnetic head, or a liquid crystal panel, when detecting surface position information of a wafer surface by a surface position detection optical system (autofocus means) and using the surface position information at this time to manufacture It is suitable for.

[0002]

2. Description of the Related Art Conventionally, there are various reduction projection exposure apparatuses (steppers) for exposing a photosensitive substrate by a step-and-repeat method and scanning type exposure apparatuses (exposure apparatuses) using a step-and-scan method as exposure apparatuses for manufacturing devices. Is proposed. Among them, in the scanning type exposure apparatus, the pattern on the reticle surface is illuminated by a slit-shaped light beam, and the pattern illuminated by the slit-shaped light beam is exposed and transferred onto a wafer by a scanning operation via a projection system (projection optical system). There is.

FIG. 7 is a schematic view of a main part of a conventional stepper. In the figure, the pattern image on the reticle 47 is projected and exposed by the exposure light from the illumination optical system (not shown) onto each shot area on the wafer 32 coated with the photoresist via the projection optical system 31. The wafer 32 is mounted on the XYθZ stage 33, and the optical axis AX of the projection optical system 31.
The wafer 32 is positioned in a plane (XY plane) perpendicular to the plane.

At this time, the wafer 32 is mounted on the XYθZ stage 3
3 and the bar mirror 46 provided on the external laser interferometer 4
4, the X and Y coordinates of the XYθZ stage 33 are constantly detected and supplied to the main control system 43. The main control system 43 controls the X-axis of the XYθZ stage 33 via the drive unit 42.
By controlling the Y drive operation, the pattern image of the reticle 47 is sequentially exposed to each shot area of the wafer 32 by the step-and-repeat method.

The elements 34 to 41 shown in FIG.
This is a multi-point focus position detection system that measures surface position information such as the position of the two surfaces in the optical axis AX direction and the inclination with respect to the optical axis AX at a plurality of points on the wafer 32 surface. In the figure, unlike the exposure light, illumination light that does not expose the photoresist on the wafer 32 to light is used. The light from the illumination light source 34 illuminates the pattern forming plate 36 via the condenser lens 35. The illumination light transmitted through the pattern forming plate 36 is reflected by the lens 37 and the mirror 3.
The image is projected and imaged on the wafer 32 through the image forming device 8. The illumination light reflected by the wafer 32 passes through the mirror 39 and the lens 40 to re-image a pattern image on the pattern forming plate 36 on the light receiving surface of the light receiver 41.

In this case, detection signals from a large number of light receiving elements of the light receiver 41 are supplied to a signal processing device 45, a focus signal is supplied to a main control system 43, and a θZ drive of an XYθZ stage 33 is performed via a drive device 42. Are in control.

FIG. 8B shows an opening pattern formed on the pattern forming plate 36, and five slit-shaped opening patterns 52-1 to 52-5 are provided in a cross shape. The projected images AF1 to A on the wafer 32
As shown in FIG. 8A, F5 is in the maximum exposure area 54 inscribed in the circular illumination area of the projection optical system 31.

FIG. 8C shows a state on the light receiving surface of the light receiver 41, which is a cross-shaped five light receiving elements 55-1 to 55-5.
Is arranged. A light shielding plate (not shown) having a slit-shaped opening is arranged on the light receiving elements 55-1 to 55-5.

Further, measurement points AF1 to AF5 shown in FIG.
The image of the upper slit-shaped aperture is the optical axis A of the projection optical system 31.
Since the projection is performed obliquely with respect to X, when the focus position of the exposure surface of the wafer 32 changes, the re-imaging position of those projected images on the light receiver 41 changes in the X direction. Therefore, in the signal processing device 45, each of the light receiving elements 55-1 to 55
The detection signal of -5 is processed to obtain five focus signals corresponding to the focus positions of the measurement points AF1 to AF5.

The average tilt angle of the surface of the exposure area 54 and the focus position are obtained from the five focus positions and supplied to the main control system 43, which in turn drives the drive unit 4.
The focus position and the tilt angle of the wafer 32 are set to predetermined values via 2.

In this way, in the stepper,
The pattern image of the reticle is exposed with the focus position and tilt angle of each shot of the wafer 32 adjusted to the image plane of the projection optical system 31.

[0012]

When the multi-point type focus position detection system used in the conventional stepper as shown in FIG. 7 is directly applied to the scanning type exposure apparatus of the slit scan exposure type, the following is obtained. Problems occur.

First, since focus measurement is performed during exposure, focus measurement is performed while the refractive index of the resist on the wafer surface changes due to exposure.
Then, the amount of light that passes through the resist and is reflected from the base changes, and eventually the focus measurement accuracy deteriorates. Secondly, since focus measurement is performed through the fluctuation of air generated by the exposure energy, this also causes a decrease in measurement accuracy. As described above, if the conventional focus measurement technique is directly applied to the scanning exposure apparatus of the slit scan exposure system, various problems occur in terms of accuracy.

According to the present invention, a reticle surface (first object) is illuminated with a slit-shaped illumination light beam, and a pattern on the reticle surface is projected onto a wafer (second object) by a projection optical system using a scanning exposure method. During exposure, highly accurate detection is performed using a surface position detection optical system in which the surface position information such as the position of the wafer surface in the optical axis direction of the projection optical system and the inclination with the optical axis is appropriately set,
In addition, if necessary, the adverse effect of air fluctuations is improved by using an appropriately set air-conditioning unit, thereby providing a high-resolution scanning exposure apparatus that facilitates projection exposure onto a large screen and a device using the same. The purpose is to provide a manufacturing method.

[0015]

A scanning type exposure apparatus according to the present invention comprises: (1-1) illuminating a pattern on a first object plane with a slit-shaped illumination light beam and projecting the pattern on the first object plane. An optical system scans the first object and the movable stage on the second object plane placed on the movable stage in the lateral direction of the slit shape in synchronization with a speed ratio corresponding to the projection magnification of the projection optical system. When performing projection exposure while performing the projection exposure, the light flux from the light irradiation means is made incident on a region on the second object plane that precedes the slit scanning direction, and the reflected light flux from the second object plane is projected onto a predetermined surface by the re-imaging system. It is characterized in that a surface position detection optical system for detecting the surface position information of the second object surface is used by guiding the light and using the incident position information of the light flux on the predetermined surface.

In particular, (1-1-1) a plurality of the surface position detecting optical systems are juxtaposed in the same direction as the scanning direction.

(1-1-2) The surface position detection optical system projects a plurality of spot lights on the second object surface in a direction orthogonal to the scanning direction.

(1-1-3) Two surface position detecting optical systems are provided, and spot lights from the two surface position detecting optical systems are respectively arranged on the second object plane in a region sandwiching the slit exposure region. One of the surface position detection optical systems is selected and used according to the scanning direction.

(1-1-4) An air conditioner for air-conditioning the second substrate in a direction orthogonal to the slit scanning direction is provided.

(1-1-5) An air conditioner is provided to air-condition the second substrate from the direction opposite to the slit scanning direction.

(1-1-6) The air conditioning means should switch the air conditioning direction by the slit scanning direction.

(1-1-7) The air conditioning means controls the air conditioning using temperature data from a plurality of temperature sensors provided near the second object surface. And so on.

The device manufacturing method of the present invention is characterized in that the device is manufactured by using the scanning exposure apparatus having the structure (1-1).

[0024]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of a main part of a first embodiment of the present invention. This figure shows a case where the surface position of the wafer 4 in the optical axis AX direction of the projection lens 1 is detected in the slit scan type projection exposure apparatus.

In the figure, reference numeral 1 is a reduction projection lens (projection lens), and AX is its optical axis. The image plane of the projection lens 1 is perpendicular to the Z direction in the figure. A reticle 2 is held on the reticle stage 3. The pattern of the reticle 2 (reticle pattern) is reduced and projected at a projection magnification of 1/4 to 1/2 of the reduction projection lens 1 to form a pattern image on its image plane (wafer 4). Reference numeral 4 denotes a wafer having a surface coated with a resist, on which a plurality of exposure regions (shots) formed in the previous exposure step are arranged. Reference numeral 5 is a wafer stage on which a wafer is placed.

The wafer 4 is adsorbed and fixed to the wafer stage 5. The wafer stage 5 is an XY stage that can move horizontally in the X-axis direction and the Y-axis direction, moves in the Z-axis direction, which is the optical axis AX direction of the projection lens 1, and rotates around an axis horizontal in the X-axis and Y-axis directions. Rotatable leveling stage, Z
The rotary stage is rotatable around an axis horizontal to the axis, and constitutes a 6-axis correction system for matching the pattern image of the reticle 2 with the exposed area on the wafer 4. A bar mirror 28 controls the position of the XY stage 5 together with the laser interferometer 24.

Reference numerals 10 to 19 represent respective elements of a surface position detecting optical system provided for detecting the surface position and the inclination of the wafer 4 in the optical axis AX direction. Reference numeral 10 denotes a light source, which includes a white lamp or an illumination unit configured to emit light from a high-intensity light emitting diode having a plurality of different peak wavelengths. 11 is a collimator lens,
The light flux from the light source 10 is emitted as a parallel light flux whose cross-sectional intensity distribution is substantially uniform.

Reference numeral 12 denotes a prism-shaped slit member, which is formed by adhering a pair of prisms so that their slopes face each other, and a plurality of openings (for example, 6 pins) as shown in FIG. 3 are formed on the adhering surface 12d. Hall 12a (12a
1 to 12a3) and 12b (12b1 to 12b3) are used, the number may be any number. ) Is provided using a light-shielding film such as chromium. Reference numeral 13 denotes a lens system, which is composed of both telecentric systems, and has a plurality of slit members 12 (6
Six independent light fluxes that have passed through the pinholes 12a and 12b are guided to six measurement points on the wafer 4 surface via the mirror 14.

Although only two light beams are shown in FIG. 1, there is another light beam between the two light beams, and there are two combinations of these light beams in the direction perpendicular to the paper surface. At this time, the lens system 13 is set so that the plane in which the pinhole of the slit member 12 is formed and the plane including the surface of the wafer 4 satisfy the Scheimpflug's condition.

In the present embodiment, each of the elements 10 to 14 constitutes one element of the light irradiation means. In FIG. 2, the pinhole 12a (12a1-12a3) of the slit member 12 is shown.
DU is a light irradiation means for irradiating the light flux from
1, the light irradiation means for irradiating the light flux from the pinhole 12b (12b1 to 12b3) onto the surface of the wafer 4 is shown as DD1. The two light irradiation units DU1 and DD1 are juxtaposed in the same direction as the scanning direction SCA.

In the present embodiment, the angle of incidence φ of each light beam from the light irradiation means on the surface of the wafer 4 (the vertical line standing on the surface of the wafer 4, that is, the angle formed with the optical axis AX) is φ = 70 ° or more. A plurality of pattern areas (exposure area shots) are arranged on the surface of the wafer 4. The luminous fluxes of the six pinholes 12a and 12b of the slit member 12 that have passed through the lens system 13 are measured by the light irradiation means DU1 and DD1 as shown in FIG.
3, incident on CD1 to CD3, pinhole images 12c, 1
2d is formed.

Next, the elements 12 to 19 for re-imaging the pinhole images 12c and 12d formed on the surface of the wafer 4 on the predetermined surface by the re-imaging system will be described.

Numeral 16 is a condenser lens which is composed of both telecentric systems and which reflects the six reflected light beams from the surface of the wafer 4 into the mirror 1
It is focused via 5. Reference numeral 17 denotes a stopper diaphragm 17 provided in the condenser lens 16, and each of the six measurement points CU1
To CU3, CD1 to CD3, and cuts high-order diffracted light (noise light) generated by the circuit pattern existing on the wafer 4.

The light beams passing through the condenser lens 16 composed of both telecentric systems have their optical axes parallel to each other, and the photoelectric conversion means group 19 is composed of six individual correction lenses of the correction optical system group 18. The re-images are formed on the respective detection surfaces 19a so that the spot lights have the same size.
The light receiving side (from the condenser lens 16 to the correction optical system group 18) is at each of the measurement points CU1 to CU3, CD on the wafer 4 surface.
The tilt correction is performed by making 1 to CD3 and the detection surface 19a of the photoelectric conversion means group 19 conjugate with each other.

As a result, the position of the pinhole image 12b on the detection surface 19a does not change due to the local inclination of each measurement point, and detection is performed in response to the height change of each measurement point in the optical axis AX direction. Pinhole images 12c and 12d on the surface 19a
The position of is changed.

FIG. 2 shows a pinhole image 1 on the surface of the wafer 4.
2a (12a1 to 12a3) is re-imaged on the detection surface 19a as a re-imaging system EU1 and a pinhole image 12b (12b1).
˜12b3) is re-imaged on the detection surface 19a as ED1. Two re-imaging systems EU1 and ED
1 is juxtaposed in the same direction as the scanning direction SCA.

As described above, in this embodiment, the position information of the pinhole images 12c and 12d formed on the detection surface 19a is obtained by the photoelectric conversion means group 19 and the surface position detection system 26,
From this, surface position information such as the position and inclination of the wafer 4 surface in the optical axis AX direction is obtained.

Next, the slit scan type exposure system in this embodiment will be described. As shown in FIG. 1, the reticle 2 is sucked and fixed to the reticle stage 3, and then, in the plane perpendicular to the optical axis AX of the projection lens 1, the Y direction (perpendicular to the paper surface, the SCA direction in FIG. 2) shown in FIG. ), And the correction drive is performed so that the target coordinate position is always scanned in the X direction.

The positional information of the reticle stage 3 in the X and Y directions is obtained by using a reticle interferometer (X) provided outside the XY bar mirror 20 fixed to the reticle stage 3 in FIG.
Y) Irradiates a plurality of laser beams from 21 to constantly measure and control by the reticle position control system 22. The exposure illumination optical system 6 uses a light source that generates a pulsed light such as an excimer laser, and is configured by each member such as a beam shaping optical system, an optical integrator, a collimator, and a mirror, which are not shown, and a far ultraviolet region. It is made of a material that efficiently transmits or reflects the pulsed light.

The beam shaping optical system shapes the sectional shape (including dimensions) of the incident beam into a desired shape. The optical integrator makes the light distribution characteristics of the light flux uniform and illuminates the reticle 2 with a uniform illuminance. A rectangular illumination area is set in accordance with the chip size by a masking blade (not shown) in the exposure illumination optical system 6, and the pattern on the reticle 2 partially illuminated in the illumination area is coated with a resist through the projection lens 1. It is projected on the wafer 4.

Reference numeral 27 shown in FIG. 1 is a main controller. The main controller 27 displays the slit image of the reticle 2 on a predetermined area of the wafer 4 at a position in the XY plane (position of X, Y and rotation θ about an axis parallel to the Z axis) and position in the Z direction (X, Y). The whole system is controlled so that scan exposure is performed while adjusting the rotations α, β around the axes parallel to the respective axes and the height Z) on the Z axis. That is, for alignment in the XY plane of the reticle pattern, control data is calculated from the position data of the reticle interferometer 21 and the wafer stage interferometer 24 and the position data of the wafer 4 obtained from an alignment microscope (not shown), and the reticle position control system 22 It is realized by controlling the wafer position control system 25.

When the reticle stage 3 is scanned in the Y direction in FIG. 1, the wafer stage 5 is scanned in the Y direction in FIG. 1 at a speed corrected by the reduction magnification of the projection lens 1. The scanning speed of the reticle stage 3 is determined so that the throughput is advantageous from the width of the masking blade (not shown) in the scanning direction in the exposure illumination optical system 6 and the sensitivity of the resist applied on the surface of the wafer 4. The alignment of the reticle pattern in the Z-axis direction, that is, alignment with the image plane is controlled by the leveling stage in the wafer stage 5 based on the calculation result from the surface position detection system 26 that detects the height data of the wafer 4. Through the wafer position control system 25.

That is, in the vicinity of the slit image SL of the slit in the exposure illumination optical system 6 with respect to the scanning direction SCA in FIG.
-CU3 (CD1-CD3) are formed. Then, the inclination in the scan direction SCA and the vertical direction (X direction) and the height in the optical axis AX direction are calculated from the height data of the three spots CU1 to CU3 or CD1 to CD3 of the wafer height measurement spot light. The surface position is corrected by obtaining the correction amount to the optimum image surface position at the exposure position.

In FIG. 2, a measurement point CU1 on the wafer 4
˜CU3 are measurement positions when the slit image SL moves (scans) in the + Y direction on the wafer 4, and measurement points CD1 to CD3 on the wafer 4 have the slit SL on the wafer 4 −Y.
This is the measurement position when moving (scanning) in the direction.

In this way, by performing focus measurement at a position away from the exposure area of the reduction projection optical system 1 and prior to exposure, measurement errors caused by fluctuations in the refractive index of the photoresist that change during exposure are avoided. .

Two light irradiation means DU1 and DD1, 2 are provided.
The two re-imaging systems EU1 and ED1 are formed integrally, but may be formed independently. When the air near the wafer fluctuates due to the irradiation of light on the surface of the wafer 4, the air is sent from the air conditioning unit 29 to prevent the fluctuation of the air near the wafer. The air conditioning on the wafer 4 at this time is shown in FIG.
As indicated by the middle direction L or the direction R, it is a direction which is blown in a direction orthogonal to the scanning direction SCA and is hardly affected by air fluctuations generated by exposure energy.

FIG. 4 shows a wafer 4 according to the second embodiment of the present invention.
FIG. In this embodiment, the air conditioning directions U and D on the wafer 4 are opposite to the slit scan direction SCA as an air conditioning direction for preventing fluctuations of air near the wafer 4 by the air conditioning means. Further, the influence of the air fluctuation generated by the exposure energy is suppressed by adopting a configuration in which the air conditioning direction changes depending on the scanning direction SCA. That is, the slit image SL is + on the wafer 4.
The air conditioning direction when moving (scanning) in the Y direction is the direction U, and the air conditioning direction when the slit image SL moves (scanning) in the -Y direction on the wafer 4 is D.

In addition to this, in the present invention, a plurality of temperature sensors are provided in the vicinity of the optical path of the optical system for detecting the wafer or surface position, and the air conditioning strength is controlled so that the temperature difference can be minimized by the air conditioning means using the signal from the temperature sensor. May be controlled. The blowing direction at this time is not limited to one direction, but may be set in two to four directions for control.

Next, an embodiment of a method of manufacturing a semiconductor device using the projection exposure apparatus described above will be described.

FIG. 5 is a flow chart for manufacturing a semiconductor device (semiconductor chip such as IC or LSI, liquid crystal panel, CCD or the like).

Step 1 (circuit design) in this embodiment
Then, the circuit of the semiconductor device is designed. Step 2
In (mask production), a mask on which a designed circuit pattern is formed is produced.

On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4
The (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip by using the wafer manufactured in step 4, an assembly process (dicing, bonding), a packaging process (chip encapsulation). Etc. are included. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 6 is a detailed flowchart of the wafer process in step 4 above. First, in step 11 (oxidation), the surface of the wafer is oxidized. Step 12 (C
In VD), an insulating film is formed on the wafer surface.

In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus to print and expose the circuit pattern of the mask onto the wafer.

In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist are scraped off. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, a highly integrated semiconductor device can be easily manufactured.

[0058]

As described above, according to the present invention, the reticle surface (first object) is illuminated with the slit-shaped illumination light beam, and the pattern of the reticle surface is projected onto the wafer (second object) by the projection optical system. When the projection exposure is performed using the scanning exposure method, the surface position detection optical system in which the surface position information such as the position of the wafer surface in the optical axis direction of the projection optical system and the inclination with the optical axis is appropriately set is used. A scanning type exposure apparatus which has a high resolution and facilitates projection exposure onto a large screen by detecting with high accuracy and improving the adverse effect due to air fluctuations by using an air conditioner set appropriately if necessary. A device manufacturing method using the same can be achieved.

[Brief description of drawings]

FIG. 1 is a schematic diagram of a main part of a first embodiment of the present invention.

FIG. 2 is an explanatory diagram of a slit scan on the wafer surface of FIG.

3 is an explanatory view of the slit member of FIG.

FIG. 4 is an explanatory view of a slit scan on a wafer surface according to the second embodiment of the present invention.

FIG. 5 is a flowchart of a device manufacturing method of the present invention.

FIG. 6 is a flowchart of a device manufacturing method of the present invention.

FIG. 7 is a schematic view of a main part of a conventional projection exposure apparatus.

FIG. 8A is a plan view showing a two-dimensional slit-shaped aperture pattern image projected onto an exposure area by a projection optical system in a conventional example, and FIG. 8B is a pattern forming plate of a multipoint focus position detection system. The figure which shows the opening pattern above, (C) the figure which shows the arrangement of the light sensing element on the light receiver

[Explanation of symbols]

 1 Projection Optical System 2 First Object (Reticle) 4 Second Object (Wafer) 5 XY Stage 6 Illumination System 10 Light Source 11 Collimator Lens 12 Slit Member 13 Lens System 14, 15 Mirror 16 Condenser Lens 17 Stopper 18 Correction Optical System 19 Photoelectric conversion means

Claims (9)

[Claims] 1. A slit-shaped illumination light beam illuminates a pattern on a first object plane, and the pattern on the first object plane is projected on a second object plane mounted on a movable stage by a projection optical system. When projection exposure is performed while scanning the object and the movable stage in the lateral direction of the slit shape in synchronization with each other at a speed ratio corresponding to the projection magnification of the projection optical system, the light flux from the light irradiation means is applied to the second object. The light flux reflected from the second object surface is guided to a predetermined surface by a re-imaging system, and the incident position information of the light flux on the predetermined surface is used. A scanning type exposure apparatus using a surface position detection optical system for detecting surface position information of the second object surface. 2. The plurality of surface position detecting optical systems are arranged in parallel in the same scanning direction as the scanning direction.
Scanning exposure apparatus. 3. The scanning exposure apparatus according to claim 1, wherein the surface position detection optical system projects a plurality of spot lights onto the second object surface in a direction orthogonal to the scanning direction. 4. The two surface position detecting optical systems are provided, and
Spot light from one surface position detection optical system is incident on each area sandwiching the slit exposure area on the second object surface, and one surface position detection optical system is selected and used according to the scanning direction. 4. The scanning type exposure apparatus according to claim 1, wherein the exposure apparatus is a scanning type exposure apparatus. 5. The scanning exposure apparatus according to claim 1, further comprising an air-conditioning unit that air-conditions the second substrate in a direction orthogonal to the slit scanning direction. 6. The scanning exposure apparatus according to claim 1, further comprising an air-conditioning unit for air-conditioning the second substrate from a direction opposite to a slit scanning direction. 7. The air conditioning unit switches the air conditioning direction by a slit scanning direction.
Alternatively, the scanning exposure apparatus of 6. 8. The scanning type according to claim 5, wherein the air conditioning unit controls the air conditioning using temperature data from a plurality of temperature sensors provided near the second object surface. Exposure equipment. 9. A device manufacturing method, wherein a device is manufactured using the scanning exposure apparatus according to claim 1. Description: