JPH09257870A - Method for diagnosing deterioration of semiconductor switching device - Google Patents
Method for diagnosing deterioration of semiconductor switching deviceInfo
- Publication number
- JPH09257870A JPH09257870A JP6417896A JP6417896A JPH09257870A JP H09257870 A JPH09257870 A JP H09257870A JP 6417896 A JP6417896 A JP 6417896A JP 6417896 A JP6417896 A JP 6417896A JP H09257870 A JPH09257870 A JP H09257870A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- semiconductor switch
- switch element
- deterioration
- switching device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体スイッチに
用いられているサイリスタやＧＴＯ等の半導体スイッチ
素子の劣化診断方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of diagnosing deterioration of a semiconductor switch element such as a thyristor or GTO used in a semiconductor switch.
【０００２】[0002]
【従来の技術】従来、上記のような半導体スイッチ素子
の劣化の程度を診断するためには、回路内に組み込まれ
た半導体スイッチ素子を回路から取外し、図４に示すよ
うにそのアノード・カソード間に直流電圧Ｅ0 を印加
し、そのときに半導体スイッチ素子に流れる漏れ電流Ｉ
0 を測定する方法が採用されていた。この方法によれ
ば、漏れ電流Ｉ0 の大きさにより半導体スイッチ素子の
劣化状況を正確に診断することができる。2. Description of the Related Art Conventionally, in order to diagnose the degree of deterioration of a semiconductor switch element as described above, the semiconductor switch element incorporated in the circuit is removed from the circuit, and as shown in FIG. DC voltage E 0 is applied to the leakage current I flowing through the semiconductor switch element at that time.
The method of measuring 0 was adopted. According to this method, it is possible to accurately diagnose the deterioration state of the semiconductor switch element based on the magnitude of the leakage current I 0 .
【０００３】ところがこのような従来の劣化診断方法
は、半導体スイッチ素子をそれが組み込まれている回路
からその都度取り外す必要があり、そのために多くの手
数がかかるとともに、取外しや取付けの際に誤接続によ
るトラブルが発生するおそれがあった。また取外しや取
付けの際に半導体スイッチ素子を破損させたり、取付け
不良による過熱等のトラブルを発生させるおそれもあっ
た。However, in such a conventional deterioration diagnosing method, it is necessary to remove the semiconductor switch element from the circuit in which it is incorporated each time, which requires a lot of trouble and makes a wrong connection at the time of removal or attachment. There was a risk of trouble. Further, there is a possibility that the semiconductor switch element may be damaged at the time of removal or attachment, or troubles such as overheating due to defective attachment may occur.
【０００４】[0004]
【発明が解決しようとする課題】本発明は上記した従来
の問題点を解決して、サイリスタやＧＴＯ等の半導体ス
イッチ素子をそれが組み込まれている回路から取り外す
ことなく、その劣化の程度を正確に診断することができ
る半導体スイッチ素子の劣化診断方法を提供するために
なされたものである。SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems of the prior art, and accurately determines the degree of deterioration of a semiconductor switching device such as a thyristor or GTO without removing it from the circuit in which it is incorporated. The present invention has been made in order to provide a method for diagnosing deterioration of a semiconductor switch element capable of diagnosing.
【０００５】[0005]
【課題を解決するための手段】上記の課題を解決するた
めになされた本発明は、半導体スイッチ素子を回路内に
接続した状態のままオフとし、半導体スイッチ素子への
印加電圧とそのときに流れる漏れ電流の大きさとから半
導体スイッチ素子の劣化状態を診断することを特徴とす
るものである。SUMMARY OF THE INVENTION The present invention, which has been made to solve the above-mentioned problems, is to turn off a semiconductor switch element in a state where it is connected in a circuit, and to apply a voltage to the semiconductor switch element and a current flowing at that time. It is characterized in that the deterioration state of the semiconductor switch element is diagnosed from the magnitude of the leakage current.
【０００６】[0006]
【発明の実施の形態】以下に本発明の実施の形態を示
す。図１は本発明の基本的な実施形態を示す回路図であ
り、１は回路内に組み込まれたサイリスタやＧＴＯ等の
半導体スイッチ素子であり、ゲート入力によりアノード
・カソード間をオン・オフするスイッチ機能を有するも
のである。２はそのアノード・カソード間の電圧を測定
する電圧検出器、３はこの半導体スイッチ素子１に流れ
る電流を測定するための電流検出器である。なお、この
電流検出器３としてクランプ型ＣＴを用いれば、回路を
切断することなく容易に電流を測定できる利点がある。Embodiments of the present invention will be described below. FIG. 1 is a circuit diagram showing a basic embodiment of the present invention. Reference numeral 1 is a semiconductor switching element such as a thyristor or GTO incorporated in the circuit, and a switch for turning on / off between an anode and a cathode by a gate input. It has a function. Reference numeral 2 is a voltage detector for measuring the voltage between the anode and cathode, and 3 is a current detector for measuring the current flowing through the semiconductor switch element 1. If a clamp type CT is used as the current detector 3, there is an advantage that the current can be easily measured without disconnecting the circuit.
【０００７】このように回路内に接続されたままの半導
体スイッチ素子１をオフとし、そのときにアノード・カ
ソード間に回路から印加されている電圧Ｅ0 と半導体ス
イッチ素子１に流れる漏れ電流Ｉ0 を測定し、判定部４
に入力する。Thus, the semiconductor switching device 1 still connected in the circuit is turned off, and the voltage E 0 applied from the circuit between the anode and the cathode at that time and the leakage current I 0 flowing in the semiconductor switching device 1 are turned off. Measuring unit 4
To enter.
【０００８】図２は半導体スイッチ素子１に印加した電
圧Ｅ0 と漏れ電流Ｉ0 との関係の一例を示すグラフであ
り、この例では健全な半導体スイッチ素子１は印加電圧
Ｅ0 がピーク繰り返しオン電圧である2500Ｖに達するま
での領域では、漏れ電流Ｉ0 はほとんどゼロである。し
かし半導体スイッチ素子１が劣化し始めると図２に鎖線
で示すように漏れ電流Ｉ0 が増加する。FIG. 2 is a graph showing an example of the relationship between the voltage E 0 applied to the semiconductor switch element 1 and the leakage current I 0. In this example, a sound semiconductor switch element 1 is turned on repeatedly when the applied voltage E 0 is peaked. In the region up to the voltage of 2500 V, the leakage current I 0 is almost zero. However, when the semiconductor switch element 1 begins to deteriorate, the leakage current I 0 increases as shown by the chain line in FIG.
【０００９】そこで判定部４にこの図２のような印加電
圧Ｅ0 と漏れ電流Ｉ0 との関係を記憶させておけば、半
導体スイッチ素子１の劣化状況を診断することが可能と
なる。なお、回路は直流回路に限定されるものではな
く、交流回路の場合には印加電圧Ｅ0 は連続的に変化す
るので、漏れ電流Ｉ0 の変化を検出することにより半導
体スイッチ素子１の劣化状況をより正確に検出すること
ができる。Therefore, if the determination unit 4 stores the relationship between the applied voltage E 0 and the leakage current I 0 as shown in FIG. 2, it is possible to diagnose the deterioration state of the semiconductor switch element 1. The circuit is not limited to the DC circuit, and in the case of the AC circuit, the applied voltage E 0 changes continuously. Therefore, by detecting the change in the leakage current I 0 , the deterioration state of the semiconductor switch element 1 is detected. Can be detected more accurately.
【００１０】このように、本発明の方法によれば半導体
スイッチ素子１を回路内に接続した状態のままで劣化状
態を診断できるので、診断のために半導体スイッチ素子
１を回路から取り外したり、回路に取り付けたりするこ
とに伴うトラブルを解消することができる。As described above, according to the method of the present invention, the deterioration state can be diagnosed while the semiconductor switch element 1 is still connected in the circuit. Therefore, the semiconductor switch element 1 can be removed from the circuit or the circuit can be diagnosed. It is possible to eliminate the troubles associated with attaching to.
【００１１】[0011]
【実施例】次に、本発明を電力変換回路のサイリスタ素
子の劣化診断に適用した実施例を示す。図３の電力変換
回路５は、３相交流電源を直流電源に変換するための回
路であり、２個のサイリスタ素子１ａ、１ｂを直列に接
続した直列回路が３つ並列に接続されて整流回路を構成
している。各サイリスタ素子１ａ、１ｂの接続点に３相
交流電源ライン６ａ、６ｂ、６ｃがそれぞれ接続され、
また各サイリスタ素子１ａのカソード側及び各サイリス
タ素子１ｂのアノード側間に直流負荷７が接続されてい
る。Next, an embodiment in which the present invention is applied to a deterioration diagnosis of a thyristor element of a power conversion circuit will be shown. The power conversion circuit 5 of FIG. 3 is a circuit for converting a three-phase AC power supply into a DC power supply, and is a rectifier circuit in which three series circuits in which two thyristor elements 1a and 1b are connected in series are connected in parallel. Are configured. Three-phase AC power supply lines 6a, 6b, 6c are connected to the connection points of the thyristor elements 1a, 1b, respectively.
A DC load 7 is connected between the cathode side of each thyristor element 1a and the anode side of each thyristor element 1b.
【００１２】図３はサイリスタ素子１ａの劣化診断を行
う状態を示しており、電圧検出器２と電流検出器３とを
図示のように対象とするサイリスタ素子１ａに対して接
続し、そのサイリスタ素子１ａをオフとした状態で電圧
と漏れ電流とを検出し、判定部４に入力して劣化状態を
診断する。劣化が進行していると判断された場合にのみ
そのサイリスタ素子１ａを交換すればよく、正常と診断
されたときには従来のようにサイリスタ素子１ａを回路
に着脱する必要はない。FIG. 3 shows a state of diagnosing the deterioration of the thyristor element 1a, in which the voltage detector 2 and the current detector 3 are connected to the target thyristor element 1a as shown in FIG. The voltage and the leakage current are detected with 1a turned off and input to the determination unit 4 to diagnose the deterioration state. The thyristor element 1a may be replaced only when it is determined that the deterioration is progressing, and when it is diagnosed as normal, it is not necessary to attach or detach the thyristor element 1a to or from the circuit as in the conventional case.
【００１３】[0013]
【発明の効果】以上に説明したように、本発明によれば
サイリスタやＧＴＯ等の半導体スイッチ素子を回路から
取り外すことなく、その劣化の程度を正確に診断するこ
とができるから、着脱の手数、誤接続によるトラブル、
着脱時の半導体スイッチ素子の破損、取付け不良による
トラブル等をなくすることができる利点がある。また電
流検出器としてクランプ型ＣＴを用いれば、回路を切断
することなく容易に電流を測定することができる。As described above, according to the present invention, it is possible to accurately diagnose the degree of deterioration of a semiconductor switch element such as a thyristor or GTO without removing it from the circuit. Trouble due to incorrect connection,
There is an advantage that it is possible to eliminate troubles due to damage of the semiconductor switch element at the time of attachment / detachment, improper mounting. If a clamp type CT is used as the current detector, the current can be easily measured without disconnecting the circuit.
【図１】本発明の基本的な実施形態を示す回路図であ
る。FIG. 1 is a circuit diagram showing a basic embodiment of the present invention.
【図２】半導体スイッチ素子の印加電圧Ｅ0 と漏れ電流
Ｉ0 との関係を示すグラフである。FIG. 2 is a graph showing a relationship between a voltage E 0 applied to a semiconductor switch element and a leakage current I 0 .
【図３】実施例を示す回路図である。FIG. 3 is a circuit diagram showing an example.
【図４】従来例を示す回路図である。FIG. 4 is a circuit diagram showing a conventional example.
１ 半導体スイッチ素子、１ａ 実施例のサイリスタ素
子、１ｂ 実施例のサイリスタ素子、２ 電圧検出器、
３ 電流検出器、４ 判定部、５ 電力変換回路、６
ａ、６ｂ、６ｃ ３相交流電源ライン：７ 直流負荷DESCRIPTION OF SYMBOLS 1 Semiconductor switch element, 1a Thyristor element of an Example, 1b Thyristor element of an example, 2 Voltage detector,
3 current detector, 4 determination unit, 5 power conversion circuit, 6
a, 6b, 6c 3 phase AC power supply line: 7 DC load
Claims (1)
状態のままオフとし、半導体スイッチ素子への印加電圧
とそのときに流れる漏れ電流の大きさとから半導体スイ
ッチ素子の劣化状態を診断することを特徴とする半導体
スイッチ素子の劣化診断方法。1. A semiconductor switch element is turned off in a state of being connected in a circuit, and a deterioration state of the semiconductor switch element is diagnosed from a voltage applied to the semiconductor switch element and a magnitude of a leakage current flowing at that time. A method for diagnosing deterioration of a semiconductor switch element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6417896A JPH09257870A (en) | 1996-03-21 | 1996-03-21 | Method for diagnosing deterioration of semiconductor switching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6417896A JPH09257870A (en) | 1996-03-21 | 1996-03-21 | Method for diagnosing deterioration of semiconductor switching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09257870A true JPH09257870A (en) | 1997-10-03 |
Family
ID=13250558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6417896A Withdrawn JPH09257870A (en) | 1996-03-21 | 1996-03-21 | Method for diagnosing deterioration of semiconductor switching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09257870A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010037583A (en) * | 1999-10-18 | 2001-05-15 | 박용종 | Device of judging leakage voltage and gate control function of thyrister |
| EP1146645A1 (en) * | 1998-07-02 | 2001-10-17 | Baoyun Yang | A contactless intellectual switch |
| JP2014035301A (en) * | 2012-08-09 | 2014-02-24 | Toyota Motor Corp | Semiconductor module |
| CN114200277A (en) * | 2020-09-18 | 2022-03-18 | 株式会社东芝 | Degradation detection device and degradation detection method |
-
1996
- 1996-03-21 JP JP6417896A patent/JPH09257870A/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1146645A1 (en) * | 1998-07-02 | 2001-10-17 | Baoyun Yang | A contactless intellectual switch |
| EP1146645A4 (en) * | 1998-07-02 | 2002-10-02 | Baoyun Yang | A contactless intellectual switch |
| KR20010037583A (en) * | 1999-10-18 | 2001-05-15 | 박용종 | Device of judging leakage voltage and gate control function of thyrister |
| JP2014035301A (en) * | 2012-08-09 | 2014-02-24 | Toyota Motor Corp | Semiconductor module |
| US9182442B2 (en) | 2012-08-09 | 2015-11-10 | Toyota Jidosha Kabushiki Kaisha | Semiconductor module |
| CN114200277A (en) * | 2020-09-18 | 2022-03-18 | 株式会社东芝 | Degradation detection device and degradation detection method |
| JP2022051269A (en) * | 2020-09-18 | 2022-03-31 | 株式会社東芝 | Deterioration detection device and deterioration detection method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20030603 |