JPH09251146A - Optical waveguide element - Google Patents

Optical waveguide element

Info

Publication number
JPH09251146A
JPH09251146A JP8087174A JP8717496A JPH09251146A JP H09251146 A JPH09251146 A JP H09251146A JP 8087174 A JP8087174 A JP 8087174A JP 8717496 A JP8717496 A JP 8717496A JP H09251146 A JPH09251146 A JP H09251146A
Authority
JP
Japan
Prior art keywords
optical waveguide
substrate
indium
lead
vibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8087174A
Other languages
Japanese (ja)
Inventor
Akira Sato
顕 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP8087174A priority Critical patent/JPH09251146A/en
Publication of JPH09251146A publication Critical patent/JPH09251146A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain an optical waveguide element in which resonance due to vibration can be eliminated and no change in the sensitivity is caused by changes in the frequency, by disposing an absorber for vibration on the backside of a substrate on which a branched interference type optical waveguide and a modulation electrode are formed. SOLUTION: An optical waveguide 2 is formed on a lithium niobate crystal substrate 1 and a modulation electrode 3 is formed near the waveguide. An indium layer of 1 to 5 μm thickness is formed by vapor deposition all over the back surface of the substrate 1, namely, on the opposite surface of the substrate 1 to the surface where the optical waveguide 2 and the modulation electrode 3 are formed. The indium film acts as an absorber 4 for vibration. The optical waveguide element is fixed with the indium film 4 to a glass plate as a base body and then assembled in a package. Or, a lead or indium-lead alloy layer may be formed to 1 to 5μm thickness as an absorber 4 for vibration all over the back surface of the substrate 1. As for the base body, a sheet of lead or indium-lead alloy having about 2mm thickness comprising lead or indium-lead alloy may be used.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、光変調器等に用い
られる光導波路素子の構成に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the structure of an optical waveguide device used in an optical modulator or the like.

【0002】[0002]

【従来の技術】光変調器や電界センサのセンサヘッドに
は、光導波路素子が多く用いられている。それらの多く
は、ニオブ酸リチウム結晶等の電気光学効果を示す材料
を基板として、図3にその一例を示すように、基板の表
面に形成した光導波路パターンと変調電極から構成され
ている。図3で、(a)は光導波路素子の平面図を、
(b)はその断面を示す図である。光導波路パターン
は、通常、分岐干渉計を構成している。変調電極3は、
分岐干渉導波路の位相シフト光導波路2の近傍に形成さ
れ、光電界センサの場合、アンテナで受信した電界や受
信信号を、二つの位相シフト光導波路2に互いに逆向き
の電界を発生させる。電界による各位相シフト光導波路
2の屈折率の変化により、これらを通る光の間に位相差
が生じ、二つの光が合流する地点で光の干渉が生ずる。
電界センサは、電界を光強度に変調し、その光強度を検
出する原理を利用している。
2. Description of the Related Art Optical waveguide devices are often used in sensor heads of optical modulators and electric field sensors. Many of them use a material having an electro-optical effect, such as lithium niobate crystal, as a substrate, and are composed of an optical waveguide pattern and a modulation electrode formed on the surface of the substrate as shown in FIG. In FIG. 3, (a) is a plan view of the optical waveguide device,
(B) is a figure which shows the cross section. The optical waveguide pattern usually constitutes a branch interferometer. The modulation electrode 3 is
In the case of the optical electric field sensor, which is formed in the vicinity of the phase shift optical waveguide 2 of the branch interference waveguide, the electric field and the received signal received by the antenna are generated in the two phase shift optical waveguides 2 in opposite directions. Due to the change in the refractive index of each phase shift optical waveguide 2 due to the electric field, a phase difference occurs between the light passing therethrough, and light interference occurs at the point where the two lights merge.
The electric field sensor uses the principle of modulating the electric field into light intensity and detecting the light intensity.

【0003】[0003]

【発明が解決しようとする課題】アンテナで受信した信
号は、変調電極を通して、二つの位相シフト光導波路
に、互いに逆向きの高周波電界を印加する。そのため、
それぞれの位相シフト光導波路には、ピエゾ効果により
互いに逆向きの変位が生じ、基板には面内振動が発生す
る。この面内振動は、Xカットの基板の場合、基板の厚
さ方向に横波となって伝播する。この現象は、基板の厚
さが振動の二分の一波長の整数倍となる周波数で、振動
の進行波と、対向面からの反射波が作用し合い、共振状
態となる。
The signal received by the antenna is applied with high frequency electric fields in opposite directions to the two phase shift optical waveguides through the modulation electrodes. for that reason,
The respective phase shift optical waveguides are displaced in opposite directions due to the piezo effect, and in-plane vibration is generated in the substrate. In the case of an X-cut substrate, this in-plane vibration propagates as a transverse wave in the thickness direction of the substrate. In this phenomenon, the traveling wave of the vibration and the reflected wave from the facing surface act on each other at a frequency at which the thickness of the substrate is an integral multiple of a half wavelength of the vibration, and a resonance state occurs.

【0004】使用する周波数帯域に、こうした共振周波
数が含まれている場合、光導波路素子には共振により電
界強度に対する感度変化としてあらわれていた。例え
ば、ニオブ酸リチウム結晶を基板とする光導波路素子の
場合、170MHzから230MHzまでの周波数で
は、一定強度の電界に対する感度特性が、約5MHz間
隔で急激に変化する現象が観測された。この共振周期
は、ニオブ酸リチウムの厚み−共振周波数定数2400
MHz・μmの値をもとに、基板の厚さ500μmに対
して求められる共振周波数4.8MHzとほぼ一致する
ことから、この感度変化は、共振現象によることが確認
された。光導波路素子を用いた電界センサの場合、この
ような感度変化は、有害な誤差の発生原因となる。な
お、一般に、光導波路素子は、その機械的強度を増すた
めに、ガラス板等に接着剤を介して密着される。そのガ
ラス板等は、パッケージへの組み込みの際の台座の役割
をなすことになる。この台座としてのガラス板等は、先
に述べたように、機械的保持機能を有するのみで、共振
現象の抑制や低減に有効な働きは示さない。
When such a resonance frequency is included in the frequency band used, the optical waveguide element appears as a change in sensitivity to the electric field strength due to resonance. For example, in the case of an optical waveguide device using a lithium niobate crystal as a substrate, a phenomenon was observed in which the sensitivity characteristic to an electric field of constant strength drastically changes at an interval of about 5 MHz at frequencies from 170 MHz to 230 MHz. This resonance period is defined by the thickness of lithium niobate-resonance frequency constant 2400.
Based on the value of MHz · μm, the resonance frequency is 4.8 MHz, which is obtained for the substrate thickness of 500 μm, and it is confirmed that this sensitivity change is due to the resonance phenomenon. In the case of an electric field sensor using an optical waveguide element, such a change in sensitivity causes a harmful error. In general, the optical waveguide element is adhered to a glass plate or the like via an adhesive in order to increase its mechanical strength. The glass plate or the like serves as a pedestal when it is incorporated in the package. As described above, the glass plate or the like as the pedestal has only a mechanical holding function, and does not exhibit an effective function of suppressing or reducing the resonance phenomenon.

【0005】本発明の目的は、振動による共振をなく
し、周波数変化による感度変化が生じない光導波路素子
を提供することである。
An object of the present invention is to provide an optical waveguide device which eliminates resonance due to vibration and does not cause sensitivity change due to frequency change.

【0006】[0006]

【課題を解決するための手段】前記課題を解決するため
に、本発明は、電気光学効果を示す結晶基板表面に分岐
干渉型光導波路、および分岐干渉型光導波路の近傍に変
調電極をそれぞれ形成して構成される光導波路素子にお
いて、分岐干渉型光導波路等が形成された基板の裏面
に、インジウムや鉛からなる振動の吸収体を備えた光導
波路素子である。
In order to solve the above-mentioned problems, the present invention forms a branch interference type optical waveguide on the surface of a crystal substrate exhibiting an electro-optical effect, and a modulation electrode in the vicinity of the branch interference type optical waveguide. In the optical waveguide element configured as described above, a vibration absorber made of indium or lead is provided on the back surface of the substrate on which the branch interference type optical waveguide and the like are formed.

【0007】更に、振動の吸収体を介して、光導波路素
子を支持体に接合した構成にすれば、実用的で、より有
効である。なお、振動の吸収体および支持体を、同一物
かつ一体としてもよい。
Further, it is practical and more effective if the optical waveguide element is joined to the support through the vibration absorber. The vibration absorber and the support may be the same and integrated.

【0008】[0008]

【発明の実施の形態】以下に、本発明の構成を実施例に
よって具体的に説明する。
BEST MODE FOR CARRYING OUT THE INVENTION The constitution of the present invention will be specifically described below with reference to Examples.

【0009】(実施例1)図1は、本発明の一実施例で
ある光導波路素子の構成の断面を示す図である。ニオブ
酸リチウム結晶のX基板を基板1とし、光導波路2はY
方向に形成されている。二つの位相シフト光導波路2の
近傍には、変調電極3が形成されている。基板1の裏
面、即ち、光導波路2および変調電極3が形成されてい
る基板1の、他の一方の面には、全面に厚さ1〜5μm
のインジウムを蒸着によって形成した。インジウム膜
は、振動の吸収体4となる。光導波路素子は、インジウ
ム膜を介して支持体であるガラス板を台座として固定
し、パッケージに組み込まれた。本実施例により、約3
dBの改善が得られた。
(Embodiment 1) FIG. 1 is a diagram showing a cross section of a structure of an optical waveguide device according to an embodiment of the present invention. The substrate 1 is an X substrate of lithium niobate crystal, and the optical waveguide 2 is Y
Formed in the direction. A modulation electrode 3 is formed near the two phase shift optical waveguides 2. The back surface of the substrate 1, that is, the other surface of the substrate 1 on which the optical waveguide 2 and the modulation electrode 3 are formed has a thickness of 1 to 5 μm over the entire surface.
Of indium was formed by vapor deposition. The indium film serves as a vibration absorber 4. The optical waveguide device was fixed to a glass plate as a support via an indium film as a pedestal and incorporated into a package. According to this embodiment, about 3
An improvement in dB was obtained.

【0010】(実施例2)図2は、本発明の他の実施例
による光導波路素子の構成の断面を示す図である。実施
例1で得た光導波路素子を、吸収体4のインジウム膜を
介して、光導波路素子と同等以上の広さをもつ厚さ2m
mの鉛製のシートを支持体5としてこれに接着手段によ
って固定した。ここで、支持体5は、光導波路素子をパ
ッケージに組み込む際の台座の役割をなす。本実施例に
より約7dBの改善が得られた。
(Embodiment 2) FIG. 2 is a diagram showing a cross section of the structure of an optical waveguide device according to another embodiment of the present invention. The optical waveguide device obtained in Example 1 is provided with a thickness of 2 m having a width equal to or larger than that of the optical waveguide device through the indium film of the absorber 4.
A lead sheet of m was used as the support 5 and was fixed thereto by an adhesive means. Here, the support 5 serves as a pedestal when the optical waveguide device is incorporated in the package. An improvement of about 7 dB was obtained by this example.

【0011】(実施例3)本実施例では、ニオブ酸リチ
ウム結晶のX基板を基板とし、光導波路はZ方向に形成
されている。基板の裏面全面に、厚さ2mmのインジウ
ムシートを接着して固定した。インジウムシートは、振
動の吸収体と支持体を兼ねる。本実施例により約6dB
の改善が得られた。
(Embodiment 3) In this embodiment, an X substrate of lithium niobate crystal is used as a substrate and an optical waveguide is formed in the Z direction. An indium sheet having a thickness of 2 mm was adhered and fixed on the entire back surface of the substrate. The indium sheet serves as both a vibration absorber and a support. About 6 dB according to this embodiment
Improved.

【0012】前記の各構成による各光導波路素子の電界
検出感度を90MHzから800MHzまで測定した結
果、有害な感度変化は観測されなかった。
As a result of measuring the electric field detection sensitivity of each optical waveguide element having each of the above-mentioned constitutions from 90 MHz to 800 MHz, no harmful sensitivity change was observed.

【0013】以上の各実施例のほかに、振動の吸収体と
して、鉛、あるいはインジウム−鉛合金を基板の裏面全
面にわたって厚さ1〜5μm形成してもよく、支持体と
して、鉛、あるいはインジウム−鉛合金からなる厚さ2
mm程度のシートを用いてもよい。
In addition to each of the above embodiments, lead or indium-lead alloy may be formed as a vibration absorber over the entire back surface of the substrate to a thickness of 1 to 5 μm, and as a support, lead or indium may be used. -Thickness of lead alloy 2
A sheet of about mm may be used.

【0014】[0014]

【発明の効果】以上、説明したように、分岐干渉型光導
波路および変調電極を形成した基板の裏面に、適切な材
料で振動の吸収体を、あるいは、これを介して支持体を
配することによって、感度の周波数特性低下の原因をな
す振動は抑制されることが示された。従って、本発明
は、振動による共振をなくし、周波数変化による感度変
化が生じない光導波路素子を提供することができる。
As described above, it is possible to dispose a vibration absorber made of an appropriate material or a support therethrough on the back surface of the substrate on which the branch interference type optical waveguide and the modulation electrode are formed. It was shown that the vibration that causes the deterioration of the frequency characteristic of the sensitivity is suppressed by. Therefore, the present invention can provide an optical waveguide element that eliminates resonance due to vibration and does not cause sensitivity change due to frequency change.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例である光導波路素子の構成を
示す断面図。
FIG. 1 is a cross-sectional view showing a configuration of an optical waveguide device that is an embodiment of the present invention.

【図2】本発明の他の実施例による光導波路素子の構成
を示す断面図。
FIG. 2 is a sectional view showing the structure of an optical waveguide device according to another embodiment of the present invention.

【図3】従来の光導波路素子の構成を示す説明図。図3
(a)は平面図、図3(b)は断面図。
FIG. 3 is an explanatory diagram showing a configuration of a conventional optical waveguide device. FIG.
3A is a plan view and FIG. 3B is a cross-sectional view.

【符号の説明】[Explanation of symbols]

1 基板 2 光導波路 3 変調電極 4 吸収体 5 支持体 1 substrate 2 optical waveguide 3 modulation electrode 4 absorber 5 support

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 電気光学効果を示す基板の表面に、分岐
干渉型光導波路および該分岐干渉型光導波路の近傍に変
調電極を、それぞれ形成して構成される光導波路素子に
おいて、前記基板の他の表面に、振動の吸収体を備えた
ことを特徴とする光導波路素子。
1. An optical waveguide element constituted by forming a branch interference type optical waveguide and a modulation electrode in the vicinity of the branch interference type optical waveguide on a surface of a substrate exhibiting an electro-optical effect, wherein An optical waveguide device having a vibration absorber on the surface of the optical waveguide.
【請求項2】 前記振動の吸収体を介して支持体に接合
したことを特徴とする請求項1記載の光導波路素子。
2. The optical waveguide element according to claim 1, wherein the optical waveguide element is bonded to a support through the vibration absorber.
【請求項3】 前記振動の吸収体が前記支持体と一体、
かつ同一物であることを特徴する請求項1記載の光導波
路素子。
3. The vibration absorber is integrated with the support,
The optical waveguide device according to claim 1, wherein the optical waveguide devices are the same.
【請求項4】 前記振動の吸収体は、インジウム、およ
び鉛のうち少なくとも一つを含むことを特徴とする請求
項1,2または3記載の光導波路素子。
4. The optical waveguide device according to claim 1, wherein the vibration absorber contains at least one of indium and lead.
【請求項5】 前記支持体は、インジウム、および鉛の
うち少なくとも一つを含むことを特徴とする請求項2記
載の光導波路素子。
5. The optical waveguide device according to claim 2, wherein the support contains at least one of indium and lead.
JP8087174A 1996-03-15 1996-03-15 Optical waveguide element Pending JPH09251146A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8087174A JPH09251146A (en) 1996-03-15 1996-03-15 Optical waveguide element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8087174A JPH09251146A (en) 1996-03-15 1996-03-15 Optical waveguide element

Publications (1)

Publication Number Publication Date
JPH09251146A true JPH09251146A (en) 1997-09-22

Family

ID=13907631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8087174A Pending JPH09251146A (en) 1996-03-15 1996-03-15 Optical waveguide element

Country Status (1)

Country Link
JP (1) JPH09251146A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1291706A2 (en) * 2001-09-05 2003-03-12 Ngk Insulators, Ltd. An optical waveguide device, an optical modulator, a mounting structure for an optical waveguide device and a supporting member for an optical waveguide substrate
JP2021039056A (en) * 2019-09-05 2021-03-11 日本放送協会 Photoelectric field sensor head

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1291706A2 (en) * 2001-09-05 2003-03-12 Ngk Insulators, Ltd. An optical waveguide device, an optical modulator, a mounting structure for an optical waveguide device and a supporting member for an optical waveguide substrate
US7068863B2 (en) 2001-09-05 2006-06-27 Ngk Insulators, Ltd. Optical waveguide device, an optical modulator, a mounting structure for an optical waveguide device and a supporting member for an optical waveguide substrate
JP2021039056A (en) * 2019-09-05 2021-03-11 日本放送協会 Photoelectric field sensor head

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