JPH09246289A - Semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device provided with a HgSx Se1-x layers and also the HgSx Se1-x on a p-type II-VI group compound semiconductor layer, p-type III-V group compound semiconductor layer or a p-type IV group semiconductor layer, which is capable of forming the layers safely and also with a high controllability even at the time of using a molecular beam epitaxy method. SOLUTION: In a semiconductor laser using II-VI group compound semiconductor, a HgSx Se1-x contact layer 10 is provided on a p-type ZnSe contact layer 8, and when a p-side electrode 11 is provided on the contact layer 10, the contact layer 10 is formed by a molecular beam epitaxy method using an evaporation method, a solid phase diffusion method or a compound raw material. As raw materials for forming the HgSx Se1-x contact layer 10, the HgS and HgSe are utilized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a semiconductor having a p-type II-VI group compound semiconductor layer, a p-type III-V group compound semiconductor layer or a p-type IV group semiconductor layer. It is suitable for application to a device.

[0002]

2. Description of the Related Art In recent years, in order to increase recording / reproducing density or resolution of an optical disk or a magneto-optical disk,
There is an increasing demand for semiconductor light emitting devices capable of emitting blue or green light, and research is actively conducted toward the practical use thereof. Examples of materials used for manufacturing such a semiconductor light emitting device capable of emitting blue or green light include Zn and M.
Group II elements such as g, Cd, Hg and Be and Se, S and T
The II-VI group compound semiconductor composed of a VI group element such as e is most commonly used. In particular, the quaternary II
ZnMgSSe, which is a group VI compound semiconductor, has excellent crystallinity and can be grown on a GaAs substrate that is easily available. For example, when a semiconductor laser capable of emitting blue light is manufactured using this GaAs substrate. It is known to be suitable for clad layers and optical waveguide layers (for example,
Electronics Letters 28 (1992) 1798).

Conventionally, a semiconductor light emitting device using this II-VI group compound semiconductor, particularly a ZnMgSSe
A semiconductor light emitting device using a layer is obtained by using a molecular beam epitaxy (MBE) method to form an n-type ZnMgSSe clad layer, an active layer, a p-type ZnMgSSe clad layer, a p-type ZnSe contact layer, etc. on a n-type GaAs substrate via a buffer layer. In general, after sequentially growing, the p-side electrode is formed on the p-type ZnSe contact layer, and the n-side electrode is formed on the back surface of the n-type GaAs substrate. As a material for the above-mentioned p-side electrode, a metal having a large work function such as Au or Pt has been conventionally used, but even if these metals are used, the interface between the p-side electrode and the p-type ZnSe contact layer is still formed. There is a high barrier for holes. This barrier causes an increase in operating voltage of the semiconductor light emitting device, and thus limits the life of the semiconductor light emitting device.

Therefore, in order to solve this problem, the MBE method using Hg and Se alone is used to obtain 80 to 150.
Attempts have been made to form a HgSe contact layer on a p-type ZnSe contact layer at a temperature of ° C and form a p-side electrode on this HgSe contact layer (see, for example, J. Crys.
t. Growth 138 (1994) 455 and JP-A-6-12507.
No. 3). According to this, the barrier against holes at the interface between the p-type ZnSe contact layer and the HgSe contact layer is low, and the p-side electrode made of Au or the like can be favorably ohmic-contacted with the HgSe contact layer. p for p-type ZnSe contact layer
The ohmic contact characteristics of the side electrode can be significantly improved.

[0005]

However, Hg by the simple substance and Hg by the MBE method using Se as a raw material are used.
The conventional method described above for forming the Se contact layer is Hg
Has a problem that the controllability of the intensity of the molecular beam is extremely poor because it is extremely harmful and difficult to handle and, as can be seen from the fact that it is a liquid at room temperature, it has a very high vapor pressure. Therefore, an object of the present invention is to provide an HgS _x Se _1-x layer (where 0 ≦ x <1) such as an HgSe layer on a p-type II-VI group compound semiconductor layer such as a p-type ZnSe layer. It is an object of the present invention to provide a method for manufacturing a semiconductor device capable of forming the HgS _x Se _1-x layer safely and with high controllability even when the molecular beam epitaxy method is used.

Another object of the present invention is to provide a HgS _x Se _1-x layer (where 0 ≦
A semiconductor device in which x <1) has good ohmic contact and HgS _x Se _1-x in such a semiconductor device
It is an object of the present invention to provide a method for manufacturing a semiconductor device, which can form a layer safely and with high controllability even when using a molecular beam epitaxy method. Still another object of the present invention is a semiconductor device in which a HgS _x Se _1-x layer (where 0 ≦ x <1) is well ohmic-contacted on a p-type group IV semiconductor layer, and HgS in such a semiconductor device.
It is an object of the present invention to provide a method for manufacturing a semiconductor device capable of forming an _x Se _1-x layer safely and with high controllability even when using a molecular beam epitaxy method.

[0007]

Means for Solving the Problems To achieve the above object, a first invention of the present invention relates to Zn, Mg, Cd, Hg
At least one kind of I selected from the group consisting of
P-type II-VI comprising a Group I element and at least one Group VI element selected from the group consisting of Se, S and Te
A family compound semiconductor layer, p-type group II-VI compound semiconductor layer HgS _x Se _1-x layer (where, 0 ≦ x <1) A method of manufacturing a semiconductor device having a, HgS _x Se _{1- x}
The layer is formed by a vapor deposition method, a solid phase diffusion method, or a molecular beam epitaxy method using a compound raw material.

The second invention of the present invention is B, Al, Ga.
At least one kind of I selected from the group consisting of
A p-type III-V group compound semiconductor layer comprising a group II element and at least one group V element selected from the group consisting of N, P and As, and HgS _x Se on the p-type group III-V compound semiconductor layer. A semiconductor device having a _1-x layer (where 0 ≦ x <1).

A third invention of the present invention is B, Al, Ga.
At least one kind of I selected from the group consisting of
A p-type III-V group compound semiconductor layer comprising a group II element and at least one group V element selected from the group consisting of N, P and As, and HgS _x Se on the p-type group III-V compound semiconductor layer. _A method of manufacturing a semiconductor device having a _1-x layer (where 0 ≦ x <1), wherein a HgS _x Se _1-x layer is formed by a vapor deposition method, a solid phase diffusion method, or a molecular beam epitaxy method using a compound raw material. It is characterized by being formed by.

A fourth aspect of the present invention is a p-type group IV semiconductor layer made of at least one group IV element selected from the group consisting of C and Si, and H on the p-type group IV semiconductor layer.
A semiconductor device having a gS _x Se _1-x layer (where 0 ≦ x <1).

A fifth aspect of the present invention is a p-type group IV semiconductor layer made of at least one group IV element selected from the group consisting of C and Si, and H on the p-type group IV semiconductor layer.
A method for manufacturing a semiconductor device having a gS _x Se _1-x layer (where 0 ≦ x <1), wherein the HgS _x Se _1-x layer is formed by a vapor deposition method, a solid phase diffusion method or a compound raw material. It is characterized in that it is formed by a line epitaxy method. In the present invention, when the HgS _x Se _1-x layer is formed by the vapor deposition method or the solid phase diffusion method, the temperature of the vapor deposition source or the diffusion source is preferably 150 to 400 ° C.
And When the HgS _x Se _1-x layer is formed by the molecular beam epitaxy method using the compound raw material, the temperature of the molecular beam source is preferably 80 to 400 ° C.

In the present invention constructed as described above, the HgS _x Se _1-x layer is formed by the vapor deposition method, the solid phase diffusion method or the molecular beam epitaxy method using a compound raw material. The HgS _x Se _1-x layer can be formed safely and with high controllability even when the molecular beam epitaxy method is used. Also, p-type II-VI
A barrier against holes does not exist at the interface between the group compound semiconductor layer, the p-type III-V group compound semiconductor layer, or the p-type group IV semiconductor layer and the HgS _x Se _1-x layer. Since the height is extremely low, this HgS _x Se _1-x layer is a p-type II-VI group compound semiconductor layer, a p-type III-V layer.
Good ohmic contact is made with the group compound semiconductor layer or the p-type group IV semiconductor layer.

[0013]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows the first of the present invention.
3 is a cross-sectional view of the semiconductor laser according to the embodiment of FIG. This semiconductor laser is SC
It has an H (Separate Confinement Heterostructure) structure. As shown in FIG. 1, in the semiconductor laser according to the first embodiment, for example, C is used as a donor impurity on an n-type GaAs substrate 1 having a (100) plane orientation doped with Si, for example, as a donor impurity.
n-type ZnSe buffer layer 2 doped with l, n-type ZnMgSS similarly doped with Cl as a donor impurity
e clad layer 3, n-type ZnSSe optical waveguide layer 4 similarly doped with Cl as a donor impurity, for example ZnCdS
An active layer 5 having a single quantum well structure or a multiple quantum well structure having an e layer as a quantum well layer, a p-type ZnSSe optical waveguide layer 6 doped with N as an acceptor impurity, and N similarly doped as an acceptor impurity. p-type ZnMgS
An Se clad layer 7 and a p-type ZnSe contact layer 8 similarly doped with N as an acceptor impurity are sequentially stacked.

On the p-type ZnSe contact layer 8, an insulating layer 9 made of, for example, an alumina (Al ₂ O ₃ ) film for current confinement is formed. The insulating layer 9 is provided with stripe-shaped openings 9a extending in one direction. The width of the opening 9a is, for example, about 10 μm. The HgS _x Se _1-x contact layer (where 0 ≦ x <1) 10 is provided on the p-type ZnSe contact layer 8 in the insulating layer 9 and the opening 9a, and the p-type ZnSe contact layer 8 in the opening 9a is provided. Ohmic contact with. Here, this HgS _x Se _1-x contact layer 10
May be single crystal, polycrystalline or amorphous. On the HgS _x Se _1-x contact layer 10, a p-side electrode 11 such as an Au electrode is in contact. On the other hand, on the back surface of the n-type GaAs substrate 1, for example, In
An n-side electrode 12 such as an electrode is in contact.

As an example of the thickness of each semiconductor layer constituting this semiconductor laser, the n-type ZnSe buffer layer 2 is 30 nm, the n-type ZnMgSSe clad layer 3 and the p-type ZnMgSSe clad layer 7 are 1 μm, and the n-type Z is respectively.
The nSSe optical waveguide layer 4 and the p-type ZnSSe optical waveguide layer 6 are each 0.2 μm, and ZnCdSe forming the active layer 5 is formed.
The layer is 10 nm, and the p-type ZnSe contact layer 8 is 0.1 μm.
m, HgS _x Se _1-x contact layer 10 is 0.25 μm
It is. Further, the Mg composition ratio of the n-type ZnMgSSe clad layer 3 and the p-type ZnMgSSe clad layer 7 and S
The composition ratio is, for example, 0.13 and 0.2, respectively, and n-type Z
The S composition ratio of the nSSe optical waveguide layer 4 and the p-type ZnSSe optical waveguide layer 6 is, for example, 0.06, and ZnC forming the active layer 5 is
The Cd composition ratio of the dSe layer is, for example, 0.23. Furthermore, the thickness of the Au film forming the p-side electrode 11 is, for example, 0.
It is about 5 μm.

FIG. 2 shows a band lineup of ZnSe and HgSe (based on a flat band model), and FIG.
Indicates a band lineup of ZnSe and HgS (based on a flat band model) (J. Cryst. Growth 138 (1
994) 455). 2 and 3, the CBM (Conducti
on Band Minimum) is the bottom of conduction band, VBM (ValenceBan)
d Maximum) indicates the upper end of the valence band. Where HgS
Indicates VBM.

2 and 3, p-type ZnS is selected by selecting the S composition ratio x of the HgS _x Se _1-x contact layer 10.
It can be seen that the discontinuity of the valence band between the e contact layer 8 and the HgS _x Se _1-x contact layer 10 can be almost eliminated. As a result, there is no barrier against holes at the interface between the p-type ZnSe contact layer 8 and the HgS _x Se _1-x contact layer 10, or even if there is such barrier, the height of the barrier can be made extremely low. For this reason,
It is possible to reduce the voltage applied to the p-side electrode contact portion, thereby lowering the operating voltage of the semiconductor laser, and thus extending the life of the semiconductor laser.

Next, a method of manufacturing the semiconductor laser according to the first embodiment having the above structure will be described. In order to manufacture the semiconductor laser according to the first embodiment, first, as shown in FIG. 4, an n-type ZnSe buffer layer 2 and an n-type ZnMgSSe cladding layer 3 are formed on the n-type GaAs substrate 1 by, for example, the MBE method. , N-type ZnSS
e optical waveguide layer 4, active layer 5, p-type ZnSSe optical waveguide layer 6,
The p-type ZnMgSSe cladding layer 7 and the p-type ZnSe contact layer 8 are sequentially epitaxially grown.

In this epitaxial growth, the doping of Cl as a donor impurity of the n-type ZnSe buffer layer 2, the n-type ZnMgSSe cladding layer 3 and the n-type ZnSSe optical waveguide layer 4 is performed by, for example, ZnCl ₂
Is used as a dopant. Also, p-type ZnSSe
Optical waveguide layer 6, p-type ZnMgSSe cladding layer 7 and p
The N-type ZnSe contact layer 8 is doped with N as an acceptor impurity by converting the N ₂ gas into plasma by an electron cyclotron resonance (ECR) or radio frequency (RF) plasma cell and irradiating the substrate surface with N generated thereby. By doing.

Next, on the p-type ZnSe contact layer 8,
A stripe-shaped resist pattern (not shown) extending in one direction is formed by lithography. Next, after depositing an Al ₂ O ₃ film on the entire surface, this resist pattern is removed together with the Al ₂ O ₃ film formed thereon (lift-off). As a result, the insulating layer 9 made of the Al ₂ O ₃ film having the stripe-shaped openings 9a is formed. Next, as shown in FIG. 5, at least HgSe and HgS of HgSe and HgS are formed on the entire surface of the p-type ZnSe contact layer 8 in the insulating layer 9 and the opening 9a.
By the vapor deposition method using Se as a raw material, HgS _x Se
_{The 1-x} contact layer 10 is formed. The temperature of the vapor deposition source at this time is 150 to 400 ° C.

As one of the vapor deposition methods, a method of performing high-speed vapor deposition by rapidly heating the vapor deposition source, that is, flash heating, will be specifically described below. That is, as shown in FIG. 6, ZnSe is formed on the GaAs substrate 21.
Separately prepared by epitaxially growing the layer 22,
On the ZnSe layer 22, a powder 23 of HgSe and HgS having a grain size of 0.5 mm or less is tightly packed. Next, the ZnSe layer 22 in which the powder 23 of HgSe and HgS is tightly packed is brought close to the insulating layer 9 side of the n-type GaAs substrate 1 formed up to the insulating layer 9 as described above, at that position. Fix to each other.

Next, the n-type GaAs substrate 1 and the GaAs substrate 21 are placed on the support 31 of the heating device shown in FIG.
It is installed on the upper boat 32. Container 33 of this heating device
The inside of the gas is evacuated through an exhaust pipe 34 by a vacuum exhaust system (not shown),
₂ Gas is introduced. Then, in the N ₂ gas atmosphere, flash heating is performed by rapidly flowing an electric current from the terminals 36 and 37 of the boat 32 to the boat 32. As a result, the HgSe and HgS powder 23 on the ZnSe layer 22 of the GaAs substrate 21 evaporates rapidly, and as shown in FIG. 5, the insulating layer 9 of the n-type GaAs substrate 1 is formed.
And the HgS _x Se _1-x contact layer 10 is vapor-deposited at high speed on the p-type ZnSe contact layer 8 in the opening 9a. For example, the HgS _x Se _1-x contact layer 10 having a thickness of about 0.25 μm is formed by flash heating at 250 ° C. In this case, for example, 250 ℃
It takes about 3 seconds to heat up the temperature from 250 ° C to 70
The time required for cooling to ° C is about 60 seconds. FIG. 8 shows H at the temperature of the boat 32, that is, the vapor deposition source at this time.
The change in the thickness of gSe and HgS is shown. However, the vapor deposition time is constant at 15 seconds.

Next, as shown in FIG. 9, Au, for example, is immediately vapor-deposited on the HgS _x Se _1-x contact layer 10 formed as described above to form the p-side electrode 11. On the other hand, on the back surface of the n-type GaAs substrate 1, n
The side electrode 12 is formed. After that, the n-type GaAs substrate 1 on which the laser structure is formed as described above is cleaved in a bar shape to form both resonator end faces, and then end face coating is performed, and the bar is cleaved to form a chip. As described above, a semiconductor laser having substantially the same structure as that shown in FIG. 1 is manufactured.

The HgS _x Se _1-x contact layer 10 and the p-type Z formed by the vapor deposition method by the flash heating described above.
In order to confirm the contact characteristics with the nSe contact layer 8, as shown in FIG.
The HgS _x Se _1-x contact layer 10 is formed on the nSe contact layer 42 by the vapor deposition method using the flash heating described above, and the HgS _x Se _1-x contact layer 10 is patterned into a predetermined shape to prepare a sample. _x Se
_A current was made to flow through the Au wire 44 connected to the _1-x contact layer 10 as shown by an arrow in FIG. 10, and the current-voltage characteristics were measured. The result shown in FIG. 11 was obtained. It can be seen from FIG. 11 that good ohmic contact characteristics are obtained.

As described above, according to the first embodiment, HgS _x Se _{1-x is formed} on the p-type ZnSe contact layer 8.
By forming the contact layer 10, the p-side electrode 11 can be brought into good ohmic contact with the p-type ZnSe contact layer 8. For this reason, the voltage applied to the p-side electrode contact portion can be lowered, and thereby the operating voltage of the semiconductor laser can be lowered, and thus the life of the semiconductor laser can be extended. In addition, the HgS _x Se _1-x contact layer 10
Is formed by the vapor deposition method using HgSe and HgS powder 23, which are compounds having far less harmful effects than Hg alone, as a raw material, and thus can be formed safely.

Next, a second embodiment of the present invention will be described. In the above-described first embodiment, HgS _x
Although the vapor deposition method is used to form the Se _1-x contact layer 10, in the second embodiment, this HgS _x Se is used.
_A solid phase diffusion method is used to form the _1-x contact layer 10. Here, in particular, a case of forming the HgS _x Se _1-x contact layer 10 by using a solid phase diffusion method by flash heating will be described. That is, in the second embodiment, as shown in FIG. 12, at least the portion of the opening 9a of the insulating layer 9 is faced upward with the insulating layer 9 side of the n-type GaAs substrate 1 having the insulating layer 9 formed. p-type ZnSe
HgSe and HgS powder 2 on the surface of the contact layer 8
3, the ZnSe layer 22 of the GaAs substrate 21 is brought close to it, and they are fixed to each other in this state.

Next, this sample is placed on the boat 32 of the heating device shown in FIG. 7, and the boat 32 is loaded as in the first embodiment.
Flash heating is performed by rapidly applying an electric current to. By this flash heating, HgSe and H are formed on the surface of the p-type ZnSe contact layer 8 in the opening 9a portion of the insulating layer 9.
Hg, S and Se are solid-phase diffused from the gS powder 23. As a result, as shown in FIG.
P-type ZnSe contact layer 8 in the opening 9a portion of
The HgS _x Se _1-x contact layer 10 is formed on the surface of the. Specifically, for example, Hg having a thickness of 30 to 60 nm
The S _x Se _1-x contact layer 10 can be formed. In addition, Hg on the surface of the p-type ZnSe contact layer 8,
The solid-state diffusion of S and Se to form the HgS _x Se _1-x contact layer 10 means that secondary ion mass spectrometry (S
It has been confirmed by analysis by the IMS method. This second
Except for the above, the second embodiment is the same as the first embodiment, and thus the description thereof is omitted. Also in the second embodiment, the same advantages as in the first embodiment can be obtained.

Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above embodiments, and various modifications based on the technical idea of the present invention are possible. For example, in the first embodiment and the second embodiment described above, the HgS _x Se _1-x contact layer 10 is formed by vapor deposition or solid-phase diffusion in the N ₂ atmosphere, the HgS _x Se _{1 The -x} contact layer 10 may be formed by vapor deposition in vacuum or solid phase diffusion. Further, in the above-described first and second embodiments, HgSe and HgS are used as the raw materials when forming the HgS _x Se _1-x contact layer 10 by the vapor deposition method or the solid phase diffusion method. , In some cases, Hg, S, and S of the simple substance are used as raw materials in this case.
You may use e.

Furthermore, the above-mentioned first embodiment and second embodiment
In the above embodiment, the MBE method is used for the epitaxial growth of the n-type II-VI group compound semiconductor layer and the p-type II-VI group compound semiconductor layer.
For the epitaxial growth of the —VI compound semiconductor layer and the p-type II-VI compound semiconductor layer, for example, a metal organic chemical vapor deposition (MOCVD) method may be used. In the first and second embodiments described above, p
If the discontinuity is left in the valence band between the type ZnSe contact layer 8 and HgS _x Se _1-x contact layer 10, the p-type ZnSe contact layer 8 and HgS _x Se
_A graded layer for smoothly connecting the valence band to the _1-x contact layer 10 may be formed.

Furthermore, the above-mentioned first embodiment and second embodiment
N-type ZnSSe optical waveguide layer 4 and p in the embodiment of
An n-type ZnSe optical waveguide layer and a p-type ZnSe optical waveguide layer may be used instead of the type ZnSSe optical waveguide layer 6. The active layer 5 may be made of ZnCdSSe or ZnSe, for example. Further, in the above-described first and second embodiments, the case where the present invention is applied to the semiconductor laser having the SCH structure has been described, but the present invention is not limited to the semiconductor laser having the DH (Double Heterostructure) structure. The present invention can be applied to various semiconductor devices other than the light emitting diode and the semiconductor light emitting element.

[0031]

As described above, according to the present invention, HgS _x Se is formed on the p-type II-VI compound semiconductor layer.
_{When the 1-x} layer is provided, the HgS _x Se _1-x layer is formed by a vapor deposition method, a solid phase diffusion method or a molecular beam epitaxy method using a compound raw material.
The S _x Se _1-x layer can be formed safely and with high controllability even when the molecular beam epitaxy method is used.
Further, a p-type III-V group compound semiconductor layer or a p-type IV
With HgS _x Se _1-x layer on family semiconductor layer can be realized satisfactorily semiconductor device ohmic contacts, HgS _x Se _1-x in such a semiconductor device
The layer can be formed safely and with high controllability even when using the molecular beam epitaxy method.

[Brief description of drawings]

FIG. 1 is a sectional view showing a semiconductor laser according to a first embodiment of the present invention.

FIG. 2 is an energy band diagram showing a band lineup of ZnSe and HgSe.

FIG. 3 is an energy band diagram showing a band lineup of ZnSe and HgS.

FIG. 4 is a sectional view for illustrating the method for manufacturing the semiconductor laser according to the first embodiment of the present invention.

FIG. 5 is a sectional view for illustrating the method for manufacturing the semiconductor laser according to the first embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating a method of forming a HgS _x Se _1-x contact layer by a vapor deposition method using flash heating in the method for manufacturing a semiconductor laser according to the first embodiment of the present invention.

FIG. 7 is a schematic diagram showing a heating device used when forming a HgS _x Se _1-x contact layer by a vapor deposition method by flash heating in the method for manufacturing a semiconductor laser according to the first embodiment of the present invention.

FIG. 8 is a schematic diagram showing changes in the thickness of HgSe and HgS when the temperature of a vapor deposition source is changed in vapor deposition by flash heating.

FIG. 9 is a sectional view for illustrating the method for manufacturing the semiconductor laser according to the first embodiment of the present invention.

FIG. 10 is a cross-sectional view showing a sample used for measuring current-voltage characteristics in the first embodiment of the present invention.

11 is a schematic diagram showing current-voltage characteristics measured using the sample shown in FIG.

FIG. 12 is a sectional view for illustrating the method for manufacturing the semiconductor laser according to the second embodiment of the present invention.

FIG. 13 is a sectional view for illustrating the method for manufacturing the semiconductor laser according to the second embodiment of the present invention.

[Explanation of symbols]

1 ... n-type GaAs substrate, 3 ... n-type ZnMgSS
e clad layer, 5 ... Active layer, 7 ... P-type ZnMg
SSe clad layer, 8 ... p-type ZnSe contact layer, 9 ... Insulating layer, 10 ... HgS _x Se _1-x contact layer, 11 ... P-side electrode, 12 ... N-side electrode

Continuation of front page (51) Int.Cl. ⁶ Identification number Office reference number FI Technical indication location H01L 21/28 301 H01L 21/28 301B 21/365 21/365 29/43 33/00 D 33/00 H01S 3 / 18 H01S 3/18 H01L 29/46 B Z

Claims (17)

[Claims] At least one group II element selected from the group consisting of Zn, Mg, Cd, Hg and Be, and S
a p-type II-VI group compound semiconductor layer composed of at least one VI group element selected from the group consisting of e, S and Te, and HgS _x Se on the p-type II-VI compound semiconductor layer
_A method for manufacturing a semiconductor device having a _1-x layer (where 0 ≦ x <1), wherein the HgS _x Se _1-x layer is formed by a vapor deposition method, a solid phase diffusion method, or a molecular beam epitaxy using a compound raw material. A method of manufacturing a semiconductor device, characterized in that the semiconductor device is formed by a method. 2. The HgS _x Se _1-x layer is formed by a vapor deposition method or a solid phase diffusion method, and the temperature of the vapor deposition source or diffusion source at that time is 150 to 400 ° C. A method for manufacturing a semiconductor device as described above. 3. The HgS _x Se _1-x layer is formed by a molecular beam epitaxy method using a compound raw material, and the temperature of the molecular beam source at that time is set to 80 to 400 ° C. A method for manufacturing a semiconductor device as described above. 4. At least H of HgSe and HgS as a raw material for forming the HgS _x Se _1-x layer.
The method of manufacturing a semiconductor device according to claim 1, wherein gSe is used. 5. The method of manufacturing a semiconductor device according to claim 1, wherein the HgS _x Se _1-x layer is single crystal, polycrystal, or amorphous. 6. A p-type III comprising at least one group III element selected from the group consisting of B, Al, Ga and In and at least one group V element selected from the group consisting of N, P and As. and -V compound semiconductor layer, the p-type group III-V HgS _x Se on a compound semiconductor layer
A semiconductor device having a _1-x layer (where 0 ≦ x <1). 7. A p-type III comprising at least one Group III element selected from the group consisting of B, Al, Ga and In and at least one Group V element selected from the group consisting of N, P and As. and -V compound semiconductor layer, the p-type group III-V HgS _x Se on a compound semiconductor layer
_A method for manufacturing a semiconductor device having a _1-x layer (where 0 ≦ x <1), wherein the HgS _x Se _1-x layer is formed by a vapor deposition method, a solid phase diffusion method, or a molecular beam epitaxy using a compound raw material. A method of manufacturing a semiconductor device, characterized in that the semiconductor device is formed by a method. 8. The HgS _x Se _1-x layer is formed by a vapor deposition method or a solid phase diffusion method, and the temperature of the vapor deposition source or the diffusion source at that time is set to 150 to 400 ° C. A method for manufacturing a semiconductor device as described above. 9. The HgS _x Se _1-x layer is formed by a molecular beam epitaxy method using a compound raw material, and the temperature of the molecular beam source at that time is set to 80 to 400 ° C. A method for manufacturing a semiconductor device as described above. 10. The method of manufacturing a semiconductor device according to claim 7, wherein at least HgSe of HgSe and HgS is used as a raw material when forming the HgS _x Se _1-x layer. 11. The method of manufacturing a semiconductor device according to claim 7, wherein the HgS _x Se _1-x layer is single crystal, polycrystal, or amorphous. 12. A p-type group IV semiconductor layer made of at least one group IV element selected from the group consisting of C and Si, and a HgS _x Se _1-x layer on the p-type group IV semiconductor layer (provided that A semiconductor device having 0 ≦ x <1). 13. A p-type group IV semiconductor layer made of at least one group IV element selected from the group consisting of C and Si, and a HgS _x Se _1-x layer on the p-type group IV semiconductor layer (provided that 0 ≦ x <1), wherein the HgS _x Se _1-x layer is formed by a vapor deposition method, a solid phase diffusion method, or a molecular beam epitaxy method using a compound raw material. A method of manufacturing a semiconductor device, comprising: 14. The HgS _x Se _1-x layer is formed by a vapor deposition method or a solid phase diffusion method, and the temperature of the vapor deposition source or diffusion source at that time is set to 150 to 400 ° C. A method for manufacturing a semiconductor device as described above. 15. The HgS _x Se _1-x layer is formed by a molecular beam epitaxy method using a compound raw material, and the temperature of the molecular beam source at that time is set to 80 to 400 ° C. A method for manufacturing a semiconductor device as described above. 16. The method of manufacturing a semiconductor device according to claim 13, wherein at least HgSe of HgSe and HgS is used as a raw material when forming the HgS _x Se _1-x layer. 17. The method of manufacturing a semiconductor device according to claim 13, wherein the HgS _x Se _1-x layer is single crystal, polycrystal, or amorphous.