JPH0922665A - X-ray image pickup tube and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an X-ray image pickup tube having high sensitivity and high quality of image without generating the white-spot-like image defect and dark current even in the high electric field by adhering a first and a second insulating surface plates, which are respectively formed integrally with a part of a target electrode pin, to each other. SOLUTION: A BN plate 4 and a glass plate 2 are adhered to each other so as to correspond a Mo target electrode pin 1 welded to the glass plate 2 to a through hole provided in the BN plate 4. The hole of the plate 4 is filled with the silver epoxy resin, and after heating it, both the surfaces are polished, and after washing both the surfaces, the plate 2 side is flattened and smoothed by ion etching so as to form the surface plate. An A film as a target electrode film 6, a CeO2 film as a positive hole filling hindering layer, and a Se film as a photoconductive film 7 are formed in order by vacuum-deposition on the surface plate, and furthermore, a Sb2 S3 porous film is formed so as to form an electron filling hindering layer. A glass plate 5 having a rectangular X-ray transmitting window and an electrode ejecting through hole at the center thereof is adhered, and the through hole is filled with the silver epoxy resin 3 so as to form a target part of an image pickup tube.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray image pickup tube, and more particularly to an X-ray image pickup tube having a highly sensitive target portion and a method for manufacturing the same.

[0002]

2. Description of the Related Art An X-ray image pickup tube is usually a target portion of an image pickup tube in which a target electrode film and a photoconductive film are laminated on a face plate which easily transmits X-rays and γ-rays (hereinafter, simply referred to as X-rays). And a scanning electron beam generator provided to face the photoconductive film via a vacuum, the incident X-ray is absorbed by the photoconductive film and converted into an electric charge, which is directly converted by the scanning electron beam. Take out as a signal. The X-ray image pickup tube enables real-time observation and provides high resolution.
It is effective for nondestructive inspection of semiconductor ICs, diagnosis inside living bodies, crystal analysis, material analysis, etc., and is widely used in fields such as industry, measurement, and academic fields.

As a face plate of a target portion of an X-ray image pickup tube, a metal Be (beryllium) plate, which is a solid material most easily transmitting X-rays, has been conventionally used in many cases, but in recent years, X-ray transparency is Be. BN, which is not as good, but is a non-toxic, machinable, insulating solid material
An X-ray image pickup tube using a (boron nitride) plate is also used (Japanese Patent Application No. 2-230658, Japanese Patent Application No. 5-89646, Television Engineering Society Technical Report IPU'93-63, 1-6).
P., 1993, etc.).

As a smoothing method for the BN plate face plate, after precision polishing, (1) the BN plate itself is ion-etched (Japanese Patent Application No. 2-072054), and (2) another material is laminated on the BN plate (special feature). Japanese Patent Application No. 2-051694, Japanese Patent Application No. 5-8964
(6, Japanese Patent Application No. 7-1722, etc.), (3) Laminating another material on a BN plate, and further smoothing the material by ion etching or the like (Japanese Patent Application No. 2-072054). Has been done.

An example of a target structure relating to electrode extraction in a conventional X-ray image pickup tube in which a BN plate is used and the shape of the target electrode film 6 is limited to a portion substantially corresponding to an electron beam scanning region is shown in FIG. 2 (a)-(c),
Shown as a specific schematic cross-sectional view (Japanese Patent Application No. 2-23065)
8. Television Society Technical Report IPU '93 -63, 1
~ 6, 1993). Here, 7 is a photoconductive film that absorbs incident X-rays and forms a charge pattern on the surface.

First, as shown in FIG. 2 (a), an insulating plate 5 having an opening for passing X-rays and a BN thin plate 4 are adhered to each other, and an electrode pin 1 penetrating them is formed on a face plate by vacuum vapor deposition or the like. The metal film 13 is joined by solder 14 or the like.
It is a sealed structure. Next, in FIG. 2B, a through hole is formed in the BN thin plate 4 and an opening for X-ray passage is formed in the insulating plate 5, and the metal film 1 is formed on the inner surface and both surfaces in the vicinity thereof.
3 is attached, and they are adhered and sealed by the conductive resin 3 and the insulating resin 15. Figure 2 (c)
The glass plate having the electrode pin 1 fused is used as the insulating plate 5 having an opening for X-ray passage, and the BN thin plate 4 having a through hole at a position corresponding to the electrode pin is used. This is a structure in which the conductive resin 3 is adhered and the inside of the through hole is filled and sealed.

The photoconductive film 7 of the X-ray image pickup tube is generally made of P.
bO, Si, Se, CdTe, etc. are used. Among them, especially amorphous Se is used as a high sensitivity image pickup tube material because an avalanche multiplication phenomenon of charges occurs inside when a high electric field is applied.

[0008]

However, in general, in an X-ray image pickup tube utilizing the avalanche multiplication phenomenon, if a slight unevenness exists on the face plate surface, a nonuniform electric field is applied to the photoconductive film under a high electric field. However, white dot-shaped screen defects locally occur, and dark current increases. For this reason, it is necessary to smooth the irregularities on the surface of the face plate to at least ± 0.1 μm or less, and to prevent foreign matter from adhering to the smoothed surface and impairing the cleaning performance. .

In the manufacturing process of the targets having the structures shown in FIGS. 2A to 2C, in order to take out the electrodes, a metal film forming operation, a soldering operation,
Either of the resin filling work is required. These operations are normally performed on the BN plate 4 (or BN plate) in the face plate preparation process.
Since it is performed after the surface smoothing process of the bonding material on the plate 4), a minute foreign substance adheres to the smoothed surface in these operations and causes local unevenness on the surface of the face plate, resulting in a white dot screen. It is easy to cause defects. On the other hand, in the target manufacturing process of the structure shown in FIGS. 2B and 2C, the through holes of the BN plate 4 (or, in some cases, the BN plate 4 and the bonding material thereon) are filled with a conductive resin or the like. After that, a step of polishing and performing a smoothing treatment by an ion etching method or the like can be considered. However, fine particles such as a conductive resin are generated in the smoothing treatment step and contaminate the smoothed surface of the BN thin plate 4. It is easy to cause white spot-like screen defects.

The present invention has been made in order to solve such a problem. Even under a high electric field such that an avalanche multiplication phenomenon occurs, SN can be generated without occurrence of white dot-like screen defects and dark current. It is an object of the present invention to provide an X-ray imaging tube having a high ratio and high sensitivity and capable of obtaining a high quality image, and a manufacturing method thereof.

[0011]

In order to achieve this object, in the present invention, the target portion of the X-ray image pickup tube is
A first insulating face plate, a second insulating face plate having one surface smoothed, a target electrode pin penetrating the first and second insulating face plates, the target electrode pin and the second insulating face plate. It is composed of a target electrode film and a photoconductive film laminated on the insulating face plate, and the target electrode pins in the second insulating face plate are integrated with the second insulating face plate in advance by fusion or the like. And the electrode pin. Here, the first insulating face plate is made of a BN plate, the second insulating face plate is made of SiO ₂ , and the target electrode pin in the first insulating face plate is
The insulating face plate is formed of a conductive material having a different composition from that of the metal electrode pin, for example, resin. Further, the photoconductive film is made of an amorphous material mainly composed of Se, and a high electric field is applied to these photoconductive films such that charges generated by the incidence of X-rays cause an avalanche multiplication phenomenon.

Further, in the above-mentioned method for manufacturing an X-ray image pickup tube, a second insulating face plate in which metal target electrode pins are integrated by fusion or the like and a through hole is formed at a position corresponding to the electrode pin. The first step of adhering the first insulating face plate and the second step of thinly polishing the second insulating face plate and the metal target electrode pin are sequentially performed. Further, a step of filling the through hole of the first insulating face plate with a conductive substance is provided between the first and second steps, and further, a second step is performed after the second step. The surface of the insulating face plate is smoothed by an ion etching method. Then, a target electrode film and a photoconductive film are sequentially formed on the smoothed surface to form a target portion.

[0013]

In the X-ray image pickup tube and the method of manufacturing the same according to the present invention, a part of the target electrode pin made of metal is previously integrated by fusion or the like as the face plate on which the target electrode film of the target portion is formed. Second insulating face plate (S
Since the iO ₂ thin plate) and the first insulating face plate (BN plate) are used by being adhered to each other, the metal film forming work, the soldering work, and the resin filling work in the prior art for the above-mentioned electrode extraction are performed. Etc. are all unnecessary. In addition, since the metal electrode pin integrated with the second insulating face plate by fusion bonding or the like is dense, fine particles that cause white dot-like screen defects may be generated during the smoothing process. Absent.

Therefore, in the X-ray image pickup tube according to the present invention, it is possible to suppress the generation of white dot-like image defects and dark current on the screen even under a high electric field such that the avalanche multiplication phenomenon occurs. A high-sensitivity, high-quality X-ray image having a high ratio can be obtained.

[0015]

【Example】

(Embodiment 1) FIG. 1 is a view showing a basic structure of an X-ray image pickup tube according to the present invention. (A) is a schematic sectional view in the vicinity of an image pickup tube target portion, (b) is an X-ray of (a). FIG. 6 is a plan view of the target surface when cut along the line X ′ as seen from the electron beam scanning side (direction A). 1 is a metal target electrode pin which is a part of the target electrode pin, 2 is a glass thin plate which is a second insulating face plate, 3 is a conductive resin, 4 is a BN thin plate which is a first insulating face plate, and 5 is A reinforcing insulating plate, 6 is a target electrode film, 7 is a photoconductive film, 8 is a scanning electron beam scanning region,
Reference numeral 9 is a metal ring, 10 is an indium ring, 11 is a mesh electrode, and 12 is a glass outer tube.

The metal target electrode pin 1 is previously integrated with the thin glass plate 2 by fusion or the like. Through holes are formed in the BN thin plate 4 at positions corresponding to the metal target electrode pins 1, and the conductive resin 3 is filled inside. An opening for X-ray passage corresponding to the scanning area 8 of the scanning electron beam and a through hole corresponding to the metal target electrode pin 1 are opened in the reinforcing insulating plate 5, and the conductive resin 3 is provided in the through hole. And the target electrode pin 1 is formed together with the metal target electrode pin 1. The glass thin film 2, the BN thin plate 4, and the reinforcing insulating plate 5 are bonded with an adhesive. The target electrode film 6 and the photoconductive film 7 are in close contact with the thin glass plate 2 and the metallic target electrode pin 1.
Are formed as shown in the figure. Here, it is desirable to use amorphous Se for the photoconductive film 7, and the hole injection blocking layer (for example, CeO ₂ film) and the electron injection blocking layer (for example, Sb ₂ S ₃ film) are not used. It is more desirable to dispose on both sides of the crystalline Se film. The surface of the metal target electrode pin and the surface of the second insulating face plate do not necessarily have to be the same surface, and as long as the target electrode film and the target electrode pin are connected with low resistance, they may be slightly connected to these connection parts. There is no problem even if there is unevenness. Also,
As a method of integrating the metal target electrode pin and the second insulating faceplate, SiO ₂ as the second insulating faceplate
When glass is used, a fusion method in which SiO ₂ glass is melted, the target electrode pin is embedded in the glass, and then gradually cooled to be integrated is considered appropriate. A method of using a resin is also conceivable, and there is no problem even with these methods.

FIG. 3 shows an example of the calculation result of the X-ray absorptance in the Se photoconductive film having the image pickup tube structure shown in FIG. In FIG. 3, when a 0.5 mm thick Be plate, a BN plate, and a SiO ₂ plate are used alone as the face plate, and when the BN plate and the smoothing material SiO _{2 are used.}
Se photoconductive film 25 when thin films are stacked and used
The calculation result of the X-ray absorption rate (X-ray utilization rate) in μm is shown. From FIG. 3, when the BN plate is used, the X-ray absorptivity of the Se film is not as great as when the Be plate is used, but 5
It can be seen that it can be used even in a low energy band of about 13 keV and that the thin SiO ₂ plate for smoothing is preferably thin.

FIG. 4 shows a flow chart of a basic manufacturing process of the X-ray image pickup tube according to the present invention. The manufacturing process is (1) BN
Drilling holes in plate 4, (2) Adhesion of glass plate 2 and BN plate 4,
(3) Filling with conductive resin 3, (4) Polishing of glass plate 2,
(5) cleaning / ion etching, (6) vapor deposition of the target electrode film 6, (7) vapor deposition of the photoconductive film 7, (8) adhesion of the reinforcing insulating plate 5, (9) electrode processing of the reinforcing insulating plate 5. , (1
0) Assembling of the image pickup tube.

Of the above steps, steps (8) and (9) may be sequentially performed after step (4). Further, when the reinforcing insulating plate 5 is unnecessary, the steps (8) and (9) are omitted. Furthermore, before step (2), (4)
In the order of steps, the glass plate 2 is not suitable because it is difficult to handle the glass plate 2 alone, and there is a risk of contaminating the polished and cleaned surfaces in the step (2).

It is possible to use the glass plate 2 having the metal target electrode pins 1 fused in advance as an X-ray image pickup tube alone, but from the viewpoint of strength, the glass thin plate cannot be made so thin. Therefore, as estimated from the curve C in FIG. 3, the applied X-ray energy band is limited.

Next, the manufacturing procedure of the X-ray image pickup tube will be described in more detail.

First, B having a thickness of 0.5 mm and a diameter of 26 mm
A through hole having a diameter of 1.5 mm is formed by ultrasonic processing at a position 8.5 mm from the center of the N plate 4. Then, a glass plate 2 having a thickness of 1.0 mm and a diameter of 26 mm and a BN plate 4 having a target electrode pin 1 made of Mo and having a diameter of 0.8 mm fused in advance at a position of 8.5 mm from the center, The target electrode pin 1 and the through hole are bonded with an adhesive so that they correspond to each other. At this time, be careful that the adhesive does not adhere to the surface of the target electrode pin 1. Next, the silver epoxy resin 3 is filled in the through holes of the BN plate 4 and heat cured. Furthermore, lightly polish the side filled with silver epoxy resin to remove BN.
After making the surface of the plate 4 and the surface of the silver epoxy resin 3 flush with each other,
The surface side of the glass plate 2 is polished by mechanical polishing until the thickness of the glass plate 2 becomes 50 μm. After sufficiently cleaning this bonded plate, the surface of the glass thin plate 2 side is smoothed by an ion etching method using Ar gas in a high frequency sputtering apparatus to obtain a face plate for an X-ray image pickup tube.

Next, using a vacuum vapor deposition apparatus, a rectangular portion of 10.5 mm × 13.7 mm and a connecting portion to the metallic target electrode pin 1 are provided on the face plate, as shown in FIG. 1 (b).
An Al film having a thickness of 30 nm and having a shape shown in FIG. 2 is formed as a target electrode film 6, and a target electrode film 6 has a diameter of 20 mm and a thickness of 20 nm.
8 nm thick SeO ₂ film is used as the hole injection blocking layer.
The film is used as the photoconductive film 7 and is sequentially vacuum-deposited. Further, using the same device, an Sb ₂ S ₃ porous film is formed as an electron injection blocking layer having a thickness of about 0.1 μm in an Ar gas atmosphere of 0.4 Torr.

The face plate taken out from the vacuum vapor deposition apparatus is shown in FIG.
As shown in Fig. 5, an 11 mm x 14 mm rectangular opening window for X-ray passage was formed in the center, and a through hole for electrode extraction of 2.5 mm diameter was formed at a position 8.5 mm from the center by ultrasonic processing. After adhering a reinforcing glass plate 5 having a thickness of 2.0 mm and a diameter of 26 mm, the through hole is filled with a room temperature curing type silver epoxy resin 3 to complete the target portion of the image pickup tube.

The target portion of the image pickup tube obtained as described above is used as a glass outer tube 12 which is an image pickup tube housing containing an electron gun.
Then, the inner ring 10 and the metal ring 9 are pressure-bonded to each other, and the inside is evacuated and vacuum-sealed to complete the X-ray imaging tube.

The obtained X-ray image pickup tube was incorporated into a camera, and the indium ring 10 was operated at a cathode potential and a voltage of 100 to 900 V was applied to the target electrode 6. As a result, a high-sensitivity, high-quality X-ray image with a high SN ratio was obtained without the occurrence of white dot-shaped screen defects and an increase in dark current.

(Embodiment 2) The X-ray image pickup tube according to the present invention,
A schematic cross-sectional view of the vicinity of the target portion in another embodiment,
As shown in FIG. Comparing FIG. 5 with FIG. 1, the structure inside the through hole for taking out the electrode of the reinforcing glass plate 5 is different, the target face plate and the indium ring 10 are different.
It can be seen that the electrode 16 is newly provided by contacting with. The electrode 16 is called a shield electrode or a guard electrode by the inventors, and when the potential of the surface of the photoconductive film 7 outside the scanning region of the scanning electron beam is set to the cathode potential, ripples and image inversion occur. It has an effect of suppressing image abnormal phenomenon such as a phenomenon (Japanese Patent Application No.
-89646).

As in the first embodiment, a through hole having a diameter of 1.5 mm is formed by ultrasonic machining at a position 8.5 mm from the center of the BN plate 4 having a thickness of 0.5 mm and a diameter of 26 mm. Next, a target electrode pin 1 made of Mo and having a diameter of 0.8 mm is pre-fused at a position of 8.5 mm from the center and has a thickness of 1.
The glass plate 2 having a diameter of 0 mm and a diameter of 26 mm is bonded to the BN plate 4 with an adhesive so that the target electrode pin 1 and the through hole correspond to each other. Next, the silver epoxy resin 3 is filled in the through holes of the BN plate 4 and heat cured. Further, the side filled with the silver epoxy resin is lightly polished once to make the surface of the BN plate 4 and the surface of the silver epoxy resin 3 flush with each other, and then the surface of the glass plate 2 is machined until the thickness of the glass plate 2 becomes 50 μm. Polishing is performed by polishing.

Next, the same opening window for X-ray passage and the reinforcing glass plate 5 having through holes for taking out electrodes as in Example 1 are bonded. Subsequently, a metal electrode pin 17 having a main portion having a diameter of 0.3 mm and a head portion having a diameter of 0.8 mm is adhered and cured using a silver epoxy resin 3 in the through hole, and then an insulating resin ( Reinforce with (epoxy resin) 15. Further, after thoroughly washing, the surface of the glass thin plate 2 side is smoothed by an ion etching method with a high frequency sputtering device in the same manner as in Example 1 to obtain a face plate for an X-ray image pickup tube.

Next, using a vacuum vapor deposition apparatus, a 30 nm thick Al having a rectangular portion of 10.5 mm × 13.7 mm and a connecting portion to the target electrode pin 1 was formed on the face plate.
A film is formed as a target electrode film 6, on which a CeO ₂ film having a diameter of 20 mm and a thickness of 20 nm is used as a hole injection blocking layer, and a Se film having a thickness of 25 μm is used as a photoconductive film 7, which are sequentially vacuum-deposited. To do. Furthermore, on the same device,
Sb ₂ with a thickness of about 0.1 μm in an Ar gas atmosphere of 0.3 Torr
The S ₃ porous film is formed as an electron injection blocking layer.

As shown in FIG. 5, the image pickup tube target portion and the shield electrode 16 obtained as described above are provided with an indium ring 10 and a metal ring 9 on a glass outer tube 12 of an image pickup tube housing containing an electron gun. Then, the inside is evacuated and vacuum-sealed to complete an X-ray imaging tube.

The obtained X-ray image pickup tube was incorporated into a camera, the indium ring 10 and the shield electrode 16 were set to the cathode potential, and the target electrode 6 was set to 200 to 255.
It was operated by applying a voltage of 0V. As a result, a high-sensitivity and high-quality X-ray image with a high SN ratio was obtained without the occurrence of white dot-shaped screen defects, an increase in dark current, and a screen abnormal phenomenon.

(Embodiment 3) An X-ray image pickup tube according to the present invention,
A schematic cross-sectional view of the vicinity of the target portion in another embodiment,
As shown in FIG. Comparing FIG. 6 with FIG. 5, FIG.
There is no reinforcing glass plate 5, the shape of the BN plate 4 is different, and
It can be seen that the N plate 4 is configured to also serve as a reinforcing plate.

BN plate 4 having a thickness of 2.5 mm and a diameter of 26 mm
The cross-sectional area is 11mm x 14mm and the depth is 2.
A 0 mm rectangular parallelepiped opening window for X-ray passage and 8.
A through hole having a diameter of 2.5 mm is formed at a position of 5 mm by ultrasonic processing. On this BN plate 4, a target electrode pin 1 made of Mo and having a diameter of 0.8 mm was placed at a position 8.5 mm from the center.
Is pre-fused with a thickness of 1.0 mm and a diameter of 26 mm
The glass plate 2 is bonded so that the target electrode pin 1 and the through hole correspond to each other, and the silver epoxy resin 3 is filled in the through hole of the BN plate 4 and heat-cured.

Next, after temporarily adhering and filling the opening window of the BN plate 4 with a BN plate having substantially the same shape as that of the opening window for reinforcement during polishing, the front surface side of the glass plate 2 is attached to the glass plate 2. Precision polishing by mechanical polishing until the thickness becomes 50 μm.

Next, after thoroughly washing, the surface of the glass thin plate 2 side is smoothed by an ion etching method with a high frequency sputtering device to obtain a face plate for an X-ray image pickup tube.

A 25 nm thick IT having a rectangular portion of 10.5 mm × 13.7 mm and a connecting portion to the target electrode pin 1 was formed on this imaging tube face plate using a vacuum vapor deposition apparatus.
The O film is formed as the target electrode film 6 in an O ₂ atmosphere of 1 × 10 to ² Torr. On top of that, a diameter of 20
mm, 20 nm thick CeO ₂ film and 25 μm thick Se
The film 7 is deposited. Furthermore, with the same device, A of 0.3 Torr
A Sb ₂ S ₃ porous film having a thickness of about 0.1 μm is formed as an electron injection blocking layer in an r gas atmosphere to complete an X-ray image pickup tube target portion.

As shown in FIG. 6, the image pickup tube target portion and the shield electrode 16 obtained as described above are provided with an indium ring 10 and a metal ring 9 on a glass outer tube 12 of an image pickup tube housing containing an electron gun. Then, the inside is evacuated and vacuum-sealed to complete an X-ray imaging tube.

The obtained X-ray image pickup tube was incorporated in a camera, the indium ring 10 and the shield electrode 16 were set to the cathode potential, and the target electrode 6 was set to 200 to 255.
It was operated by applying a voltage of 0V. As a result, Example 2
Similarly to the above, a high-sensitivity and high-quality X-ray image with a high SN ratio was obtained without occurrence of white dot-shaped screen defects, increase in dark current, and screen abnormal phenomenon.

[0040]

As described above, in the X-ray image pickup tube and the method of manufacturing the same according to the present invention, the second insulating face plate having the metallic target electrode pins fused in advance is bonded to the first face plate. By polishing and polishing the target surface plate of the image pickup tube, the SN is excellent in smoothing and cleaning, and even under a high electric field, there is no occurrence of white dot-shaped screen defects or increase in dark current, and SN
A high-sensitivity, high-quality X-ray image having a high ratio was obtained, and an X-ray image pickup tube having an extremely high utility value was obtained not only in industrial aspects but also in medical and academic research.

[Brief description of drawings]

FIG. 1 is a diagram showing a basic structure of an X-ray image pickup tube according to the present invention, in which (a) is a schematic sectional view in the vicinity of a target portion, and (b).
FIG. 4 is a plan view of the target surface as seen from the electron beam scanning side.

FIG. 2 is a diagram showing a method of extracting electrodes from a target portion of an X-ray image pickup tube using a conventional BN plate.

FIG. 3 is a diagram showing a calculation result of X-ray absorptance in a Se photoconductive film of an X-ray image pickup tube according to the present invention.

FIG. 4 is a flowchart showing a basic manufacturing process of an X-ray image pickup tube according to the present invention.

FIG. 5 is a schematic cross-sectional view showing a configuration in the vicinity of a target portion in Embodiment 2 of the X-ray imaging tube according to the present invention.

FIG. 6 is a schematic cross-sectional view showing a configuration in the vicinity of a target portion in Embodiment 3 of the X-ray imaging tube according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Metal target electrode pin 2 ... Glass thin plate 3 ... Conductive resin 4 ... BN thin plate 5 ... Reinforcement insulating plate 6 ... Target electrode film 7 ... Photoconductive film 8 ... Scanning electron beam scanning region 9 ... Metal ring 10 ... Indium ring 11 ... Mesh electrode 12 ... Glass outer tube 13 ... Metal film 14 ... Solder 15 ... Insulating resin 16 ... Shield electrode 17 ... Metal electrode pin

Front page continuation (72) Inventor Kazutaka Tsuji, 1-280, Higashi Koikekubo, Kokubunji, Tokyo, Central Research Laboratory, Hitachi, Ltd. (72) Inventor, Kenji Samejima 1-280, Higashi Koikeku, Kokubunji, Tokyo Hitachi Research Center Co., Ltd. In-house (72) Kenichi Mogi, 32 Miyuki-cho, Kodaira-shi, Tokyo Inside Koganei Plant, Hitachi Electronics Co., Ltd. (72) Inori, Noriaki Okamura 3434-1, Kamisasao, Obuchizawa-machi, Kitakoma-gun, Yamanashi Hitachi Electronics Co., Ltd. Obuchizawa Plant Within

Claims (9)

[Claims] 1. A first insulating face plate, a second insulating face plate laminated on the first insulating face plate, and a target electrode film laminated on the second insulating face plate. A photoconductive film for converting the X-rays laminated on the target electrode film into an electric signal; a target electrode pin made of a conductive material penetrating the first insulating face plate;
Through the insulating face plate, having a target electrode pin made of metal having a composition different from that of the conductive substance connecting the target electrode pin and the target electrode film,
An X-ray image pickup tube having an image pickup tube target portion in which a surface of the second insulating face plate on the side of the target electrode film is smoothed. 2. The X-ray image pickup tube according to claim 1, wherein the first insulating face plate is a BN plate. 3. The X-ray image pickup tube according to claim 1, wherein the second insulating face plate is a SiO ₂ plate. 4. The X-ray image pickup tube according to claim 1, wherein the conductive substance is a resin. 5. The X-ray image pickup tube according to any one of claims 1 to 4, wherein the photoconductive film is made of an amorphous material mainly containing Se. 6. A high electric field is applied to the inside of the photoconductive film such that charges generated by absorbing incident X-rays cause an avalanche multiplication phenomenon. The X-ray imaging tube according to the section. 7. A first insulative face plate having a through hole and a second insulative face plate integrated with a metal target electrode pin are arranged such that the metal target electrode pin and the through hole correspond to each other. A first step of adhering, a second step of thinly polishing the second insulating face plate and the metal target electrode pin after the first step, and a second insulating property after the second step The third to smooth the polished surface of the face plate
And a fourth step of forming a target electrode film on the smoothed surface of the second insulating face plate and the end surface of the metal target electrode pin after the third step, and on the target electrode film. And a fifth step of forming a photoconductive film for converting an X-ray into an electric signal, and an image pickup tube target portion manufactured by a manufacturing method is used.
Method for manufacturing a line image pickup tube. 8. A sixth step of filling a through hole of the first insulating face plate with a conductive substance between the first step and the second step. X described in 7
Method for manufacturing a line image pickup tube. 9. The method of manufacturing an X-ray image pickup tube according to claim 7, wherein the smoothing process is performed by using an ion etching method.