JPH09203626A - Probing device for measuring instrument - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a probing device for a physical-quantity measuring apparatus, which can achieve the compact configuration and the array pattern and has the less measuring errors caused by noises, by using an optical waveguide having the cantilever- beam structure. SOLUTION: This probing device for a measuring instrument has a first waveguide 11 (having a cantilever-beam structure), which is movable with respect to a substrate 9, and to which a probe 23 is connected, and a second optical waveguide 13, which has an edge 13a facing an edge 11a of the first optical waveguide 11 and is fixed to the substrate 9. In this probing device, when force such as interatomic force, magnetic force and electrostatic attraction force acts on the probe 23, which is attached to the tip of the first optical waveguide 11 having the cantilever-beam structure, the first optical waveguide 11, which is movable with respect to the substrate 9, is deformed. The force acting on the probe can be detected by detecting the degree of the deformation based on the change in amount of light transmitting from the first optical waveguide 11 to the second optical waveguide 13. Therefore, the probing device, which has the simple structure, can achieve the compact configuration and the array pattern, and has the less measuring errors caused by noises, can be achieved.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a probe.
The present invention relates to a probe device for a measuring instrument, which is applied to a physical quantity measuring device for measuring a physical quantity such as a surface potential or a surface shape of a photoconductor, a toner, and various other objects to be measured.

[0002]

[Prior art]

(1) Prior Art 1: As a structure of a probe device used in a physical quantity measuring device, for example, a structure as shown in FIG. 7 is known (see JP-A-1-109561). This conventional example is an attempt to detect the bending of the cantilever by an electric method that can be miniaturized and arrayed, instead of using an optical method such as an optical interference method or an optical lever, which is difficult to miniaturize. is there. In FIG. 7, three cantilevers 2a, 2b and 2c are provided at one end of the substrate 1 in a V-shaped structure.
A conductive probe 3 directed downward (Z direction) is attached to the tip ends of these three beams. A wiring pattern 4 (hereinafter, referred to as wiring) is connected to the probe 3, and the wiring 4 is formed on the cantilever 2c and is formed on the substrate 1 with a pad portion 5a.
Is connected to Piezoresistors 6a and 6b are formed as strain detecting elements near the roots of the cantilevers 2a and 2b, and wirings 7 are formed on the piezoresistors 6a and 6b.
a, 7b are connected, and the wirings 7a, 7b are connected to the pad portions 8a, 8b on the substrate 1.

As a result, when a voltage is applied from the pad portion 5 to the probe 3 via the wiring 4, an electrostatic attractive force is generated between the surface of the sample (measurement object: not shown) and the probe 3. This causes the cantilevers 2a and 2b to be deformed. The force applied to the probe 3 can be measured by detecting this mechanical deformation by the piezoresistors 6a and 6b, converting it from the wirings 7a and 7b into electric signals through the pad portions 8a and 8b, and outputting the electric signals.
In this case, since the probe potential is, for example, 1 KV, discharge is likely to occur between the probe and the wiring, but discharge can be achieved by separating the distance D between the cantilever 2c and the cantilevers 2a and 2b sufficiently. You can prevent it from happening.

(2) Prior art 2: As shown in FIGS. 8 and 9, an optical IC sensor using a cantilever and an optical waveguide has been proposed ("Micromechanical optical IC sensor", Optronics, 1992, No. . 9, p. 97). In this micromechanical optical IC sensor, as shown in FIG. 8, a cantilever 10 is provided in the center of a substrate 9, and an optical waveguide 1 is provided on the cantilever 10 along the extending direction thereof.
1 is formed. The optical waveguide 1 is provided on the fixed portion 12 of the substrate 9 which is sandwiched by the gap at the tip of the cantilever 10.
An optical waveguide 13 having an end face 13a facing the one end face 11a is formed. In the substrate 9 having such a structure, the light propagating through the optical waveguide 11 is radiated from the end face 11a located at the tip of the cantilever 10, and the radiated light is incident from the end face 13a opposite to the end face 11a and re-generated. They are coupled and propagate in the optical waveguide 13. In this case, as shown in FIG. 9A, when the cantilever 10 is not deformed,
Since no optical axis shift occurs between the optical waveguides 11 and 13, the amount of light propagated does not decrease. However, FIG.
As shown in, when the cantilever 10 is deformed, an optical axis shift occurs and the amount of light incident on the optical waveguide 13 side decreases.
Therefore, since the amount of light propagated changes according to the amount of deformation (bending amount) of the cantilever 10 as described above, it is possible to measure the amount of deformation of the cantilever 10 by detecting the amount of light on the optical waveguide 13 side. You can A pressure sensor, an acceleration sensor, and a flow sensor can be considered as examples of this application.

(3) Prior Art 3: As another example of an optical IC sensor using a cantilever and an optical waveguide, a structure shown in FIG. 10 has been proposed (Japanese Journal of App.
liedPysics, Vol.28, No.2, Feb., 1989, p.287, and "Micromechanical optical IC sensor", Optronics, 1
992, No. 9, p. 97). In FIG. 10, a cantilever 15 is provided on the substrate 14. An optical waveguide 16 is formed near the base of the cantilever beam 15 orthogonal to the extending direction of the beam. Further, on the fixed portion 17 of the substrate 14, the optical waveguide 18 is arranged in parallel with the optical waveguide 16.
Are formed. In this case, the optical waveguide 16 is used as a signal detecting waveguide for detecting the amount of deformation of the cantilever 15, and the optical waveguide 18 is used as a reference waveguide. It is connected to the waveguide 19. In the substrate 14 having such a structure, the optical waveguide 16 is deformed along with the deformation of the cantilever beam 15, whereby the refractive index is changed and the phase of the light propagating in the waveguide is changed. The amount of deformation of the cantilever 15 can be measured by such a phase change.

Here, the principle of operation for detecting a signal by such a phase change will be described using a Mach-Zehnder interferometer having a basic structure shown in FIGS. The deformation region corresponding to the cantilever 15 of FIG. 10 described above is shown in FIG.
Corresponds to area A (diaphragm portion having a fine structure).
The light whose phase has changed through the optical waveguide 16 on the deformed region A and the light whose phase has not changed through the optical waveguide 18 on the fixed portion 17 merge at the Y-shaped branch portion, and When multiplex interference occurs, the light intensity of the light output from the optical waveguide 19 changes depending on both phases. In this case, as shown in FIG. 12A, when both lights have the same phase, the 0th-order mode is excited by being combined, and the optical waveguide 1
The amount of light output from 9 becomes maximum. FIG.
As shown in (b), when both lights are in opposite phases, the first-order mode is excited, so that a light wave is radiated to the outside of the waveguide (in the case of a single mode waveguide), and light is output from the optical waveguide 19. Not done. By measuring the amount of light output from the optical waveguide 19 in this manner, the area A, that is, the cantilever 1
The deformation amount of 5 can be measured.

Another example of performing signal detection by phase change will be described with reference to FIGS. 13 and 14. As shown in FIG. 13, two optical waveguides 20 and 21 are provided on the substrate 14.
Are formed, and these optical waveguides 20 and 21 intersect with the optical waveguides 16 and 18 at an X-shaped branch portion. In this case, the width of the optical waveguide 21 is smaller than that of the optical waveguide 20. A reflection mirror 22 is provided on the end face of the substrate 14.
Is provided. Such a structure functions as a mode device. First, the light incident from the wide optical waveguide 20 on the left side is branched at a branching ratio of 1: 1,
The light is propagated through the optical waveguides 16 and 18, and the reflection mirror 22
It is reflected by and returns to the branch again. At this time, if both lights are in phase as shown in FIG. 14A, the 0th-order mode is excited and the lights propagate toward the optical waveguide 20 having a wide width. If both lights have opposite phases as shown in FIG. 14B, the primary mode is excited and the lights propagate to the optical waveguide 21 having a narrow width. As described above, whether or not the lights are in phase is determined by the state of the region A, that is, the amount of deformation in the case of the structure of the cantilever 15 described above. Therefore, the amount of light returning to the optical waveguides 20 and 21 should be investigated. Thus, the amount of deformation of the cantilever 15 can be measured.

[0008]

In the case of the above-mentioned prior art 1 (see FIG. 7), the wiring 4 for applying a voltage to the probe 3 is used.
In order to prevent discharge between the piezoresistors 6a and 6b or the wirings 7a and 7b, the two are separated by a distance D. However, since the voltage applied to the wiring 4 is as high as about 1 KV, when this voltage fluctuates, noise due to the voltage fluctuation is generated by the piezoresistor 6a via the parasitic capacitance parasitic between the two.
It is mixed in the signal detected by 6b and causes a measurement error. Also, the cantilever beams 2a and 2b are bent due to Joule heat generated by the current flowing through the piezoresistors 6a and 6b, which causes a measurement error.

Next, in the case of the prior art 2 (see FIGS. 8 and 9) and the prior art 3 (see FIGS. 10 to 14), the optical waveguide 11,
The basic operation principle of detecting the deformation amount of the cantilever 10 (or 15) from the light amount difference using 13 (or 16, 18) is described. However, the optical ICs of the related arts 2 and 3
The sensor is used as a sensor that detects a relatively large force such as pressure, acceleration, and flow rate. An optical IC sensor using such optical waveguides 11, 13 (or 16, 18) is used as a photoconductor drum. There is no example applied to the measurement of the surface potential, the toner potential distribution, the sample surface shape and other physical quantities. In addition, in the configurations of FIGS. 8 and 10, since the deformation of the cantilever formed on the substrate is indirectly detected using the optical waveguide, it is not possible to detect minute forces such as atomic force, magnetic force, and electrostatic attraction. Have difficulty.

The present invention has been made in view of the above circumstances, and it is an object of the inventions of claims 1 and 2 to apply the principles of the prior arts 2 and 3 to achieve miniaturization and arraying, and An object of the present invention is to provide a probe device for a measuring instrument used in a physical quantity measuring device, in which a measurement error due to noise is small.

[0011]

In order to achieve the above object, a probe device for a measuring instrument according to claim 1 is provided with a first optical waveguide which is movable with respect to a substrate and to which the probe is connected. A second optical waveguide having an end surface facing the end surface of the optical waveguide and fixed to the substrate is provided. That is, in this probe device, a probe is attached to the tip of the first optical waveguide having a cantilever structure, and a force such as an atomic force, a magnetic force, or an electrostatic attractive force acts on the probe to cause the substrate to move. The movable first optical waveguide is deformed, and the degree of this deformation is detected by the change in the amount of light propagating from the first optical waveguide to the second optical waveguide. Can be detected. As described above, in the probe device for a measuring instrument according to claim 1, since the first optical waveguide itself is a cantilever and is directly deformed by receiving a force through the probe, it is possible to detect even a minute force. It can be applied to the measurement of physical quantities.

According to a second aspect of the present invention, there is provided a probe device for a measuring instrument, a first optical waveguide which is movable with respect to a substrate and to which the probe is connected, a second optical waveguide which is fixed to the substrate, and the first optical waveguide. A third optical waveguide disposed at a position on the substrate where these two optical waveguides merge so that the light propagating through the optical waveguide and the light propagating through the second optical waveguide interfere with each other. It has a different configuration. That is, in this probe device, the probe is attached to the tip of the first optical waveguide of the cantilever structure (or the double-supported beam structure), and the atomic force, magnetic force,
The first optical waveguide that is movable with respect to the substrate is deformed by a force such as electrostatic attraction, and this deformation changes the phase of light propagating in the first optical waveguide. The light propagating through the second optical waveguide and the light propagating through the second optical waveguide join together to cause interference, and the amount of light propagating in the third optical waveguide changes. Therefore, the force acting on the probe can be detected by detecting the degree of this deformation based on the change in the amount of light propagating in the third optical waveguide. As described above, in the probe device for a measuring instrument according to claim 2, since the first optical waveguide itself is a cantilever beam (or a double-supported beam) and is deformed by directly receiving a force through the probe, it is very small. It can also be detected by force and can be applied to the measurement of physical quantities.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

First, an embodiment of the invention described in claim 1 will be described with reference to FIGS. It should be noted that the same components as those of the above-described conventional technique are designated by the same reference numerals, and the description of the same components will be omitted.

1A and 1B are views for explaining a first embodiment of the invention described in claim 1, wherein FIG. 1A is a perspective view of a probe device for a measuring instrument, and FIG. 1B is shown in FIG. It is sectional drawing of the II line part of the probe device for measuring instruments. Similar to the above-mentioned conventional technique 2 (see FIGS. 8 and 9), the optical waveguide 11 is provided at the center of the substrate 9 of FIG.
A part of the fixing portion 12 on the one end side projects into the opening in the center of the substrate to form a cantilever structure. Further, an optical waveguide 13 (second optical waveguide) having an end surface 13a facing the movable portion side end surface 11a of the optical waveguide 11 (first optical waveguide) is formed on the fixed portion 12 on the other end side of the substrate 9. Has been done. The probe 23 is attached to the tip of the movable portion of the optical waveguide 11 having a cantilever structure.

In such a structure, when the tip of the probe 23 comes close to the surface of the measuring object (not shown), the probe 23
The optical waveguide 11 having the cantilever structure is deformed by the action of atomic force, magnetic force, electrostatic attractive force, etc. on the optical waveguide, and the degree of this deformation changes the amount of light propagating from the optical waveguide 11 to the optical waveguide 13 ( The force acting on the probe 23 can be detected by detecting the force according to (see FIG. 9). Since the force can be measured by an optical method in this manner, the cantilever beam (optical waveguide) due to Joule heat as measured using a resistance element (see piezoresistors 6a and 6b shown in FIG. 7) is used. The deformation of 11) does not occur, and the wiring portion and the force detection portion can be simplified. Further, since the structure of the present invention can be manufactured by using a so-called semiconductor manufacturing process, it can be manufactured in a large amount with good uniformity by a batch process, and a plurality of optical waveguides 11 having a cantilever structure can be formed on a substrate once. Can be manufactured. Further, since it is not necessary to have a long optical path length as in the optical lever method in order to capture the deformation of the cantilever, miniaturization and arraying are possible. Therefore, by using the probe device of the present invention, it is possible to realize a small-sized physical quantity measuring device capable of performing multipoint simultaneous measurement, that is, high-speed measurement.

Next, FIG. 2 is a view for explaining a second embodiment of the invention according to claim 1, which is II in FIG. 1 (a).
It is sectional drawing of the probe device for measuring instruments corresponding to a line part. In the probe device shown in FIG. 2, in addition to the device configuration of FIG.
The structure is such that the metal film 24 as a conductive film is applied to both surfaces of the substrate 9. As a result, from the lead wire 25 connected near the root of the optical waveguide 11 (first optical waveguide) to the probe 2
3 can be applied, and the surface potential of an object to be measured such as a photoconductor or toner can be measured. Further, by coating the surfaces of the optical waveguides 11 and 13 with the metal film 24, light does not leak out of the waveguides, so that the surface potential measurement of the photoconductor is not adversely affected. . Further, as will be described later, when a light source having a wavelength at which the photoconductor has no sensitivity is used, a transparent conductive film may be used instead of the metal film 24.

Next, a second embodiment of the invention will be described with reference to FIGS. 3 to 5. It should be noted that the same components as those of the above-described conventional technique are designated by the same reference numerals, and the description of the same components will be omitted.

3A and 3B are views for explaining a first embodiment of the invention described in claim 2, wherein FIG. 3A is a perspective view of a probe device for a measuring instrument, and FIG. 3B is shown in FIG. Of the probe device for measuring instrument
It is a sectional view of a II-II line portion. Similar to the above-mentioned related art 2 (see FIGS. 10 to 12), the substrate 14 of FIG. 3 is provided with the optical waveguide 16 (first optical waveguide). The optical waveguide 16 is a fixed portion of the substrate 14. Part of V from 17
It has a cantilevered structure that protrudes outside the substrate in a letter shape (depending on the concept, a cantilevered structure). Further, a V-shaped optical waveguide 18 (second optical waveguide) arranged in parallel with the optical waveguide 16 is formed on the fixed portion 17 of the substrate 14, and the optical waveguide 16 and the optical waveguide 18 intersect each other. An optical waveguide 19 (third optical waveguide) is formed at the position. And here, the probe 23 is attached to the tip of the optical waveguide 16 having a cantilever structure.
Are formed.

In such a structure, when the tip of the probe 23 comes close to the surface of the measuring object (not shown), the probe 23
An optical waveguide 1 that is movable with respect to the substrate 14 in a cantilever structure by exerting a force such as an atomic force, a magnetic force, or an electrostatic attractive force on the
6 is deformed, the phase of the light propagating in the optical waveguide 16 is changed by this deformation, and the light propagating in the optical waveguide 16 and the light propagating in the optical waveguide 18 are merged with each other to cause interference, and The amount of propagating light changes (see FIG. 12).
Therefore, by detecting the degree of this deformation by the change in the amount of light propagating in the optical waveguide 19, the force acting on the probe 23 can be detected. Since the force can be measured by the optical method in this way, the resistance element (see FIG.
Cantilever (optical waveguide 1) due to Joule heat as measured using the piezoresistors 6a and 6b shown in FIG.
The deformation of 6) does not occur, and the wiring portion and the force detection portion can be simplified. In addition, since the structure of the present invention can be manufactured by using a so-called semiconductor manufacturing process, it can be manufactured in a large amount with good uniformity by a batch process, and a plurality of optical waveguides 16 having a cantilever structure can be formed on a substrate once. Can be manufactured. Further, since it is not necessary to have a long optical path length as in the optical lever method in order to capture the deformation of the cantilever, miniaturization and arraying are possible. Therefore, by using the probe device of the present invention, it is possible to realize a small-sized physical quantity measuring device capable of performing multipoint simultaneous measurement, that is, high-speed measurement.

Next, FIG. 4 is a view for explaining a second embodiment of the invention according to claim 2, and is II-II of FIG. 3 (a).
It is sectional drawing of the probe device for measuring instruments corresponding to a line part. In the probe device shown in FIG. 4, in addition to the device configuration of FIG.
The structure is such that the metal film 24 as a conductive film is applied to both surfaces of the substrate 14. As a result, a voltage can be applied from the lead wire 25 connected near the roots of the optical waveguides 16 and 18 to the probe 23, and the surface potential of a measurement target such as a photoconductor or toner can be measured. . Further, by coating the surfaces of the optical waveguides 16, 18, and 19 with the metal film 24, light does not leak out of the waveguides, which adversely affects the surface potential measurement of the photoconductor. There is no. Further, as will be described later, when a light source having a wavelength at which the photoconductor has no sensitivity is used, a transparent conductive film may be used instead of the metal film 24.

Next, FIG. 5 is a view for explaining a third embodiment of the invention according to claim 2 and is a perspective view of a probe device for a measuring instrument. In the probe device shown in FIG. 5, the substrate 14 of FIG. 5 is used in the same manner as the above-mentioned conventional technique 3 (see FIGS. 13 and 14).
The optical waveguide 16 (first optical waveguide) and the optical waveguide 18
Although the (second optical waveguide) is provided in parallel, the one optical waveguide 16 is provided on the rectangular cutout portion of the substrate 14, and a part of the fixed portion 17 has the cutout portion. It is exposed at the part and has a double-supported beam structure. A probe 23 is formed at the center of the double-supported beam structure of the optical waveguide 16. Further, two optical waveguides 20 and 21 (third optical waveguide) are formed on the fixed portion 17 of the substrate 14,
These optical waveguides 20 and 21 intersect with the optical waveguides 16 and 18 at X-shaped branch portions. In addition, the optical waveguides 16 and 18
A reflection mirror 22 is provided on the end surface of the substrate 14 on the end surface side.

In such a structure, when the tip of the probe 23 is brought close to the surface of the measuring object (not shown), the probe 23
An optical waveguide 1 which is movable in a double-supported beam structure with respect to the substrate 14 by a force such as an interatomic force, a magnetic force, or an electrostatic attraction acting on
6 is deformed, and this deformation changes the phase of light propagating in the optical waveguide 16. Therefore, the degree of the deformation is propagated through the optical waveguides 16 and 18, reflected by the reflection mirror 22, propagated through the optical waveguides 16 and 18 again, and propagated to the optical waveguide 2.
The force acting on the probe 23 can be measured by detecting the change in the amount of light returning to 0 and 21 (see FIGS. 13 and 14). Since the force can be measured by an optical method in this way, the doubly supported beam (optical waveguide) due to Joule heat as measured using a resistance element (see piezoresistors 6a and 6b shown in FIG. 7) is used. The deformation of 16) does not occur, and the wiring portion and the force detection portion can be simplified. Further, since the structure of the present invention can be manufactured by using a so-called semiconductor manufacturing process, it can be manufactured in a large amount with good uniformity by a batch (batch) process, and a plurality of optical waveguides 16 having a double-supported beam structure can be formed on a substrate once. Can be manufactured. Further, since it is not necessary to have a long optical path length as in the optical lever method to capture the deformation of the doubly supported beam, it is possible to reduce the size and form an array. Therefore, by using the probe device of the present invention, it is possible to realize a small-sized physical quantity measuring device capable of performing multipoint simultaneous measurement, that is, high-speed measurement.

Although not shown, in the present embodiment as well, in the same manner as in FIG. 4, metal films 24 as conductive films are applied to both surfaces of the substrate 14 to near the roots of the optical waveguides 16, 18, 20, 21. Voltage can be applied from the lead wire 25 connected to the probe 23 to the probe 23, and the surface potential can be measured. Further, since the metal film 24 is applied to the surfaces of the optical waveguides 16, 18, 20, and 21 in this way, light does not leak out, so that the surface potential measurement of the photoconductor is not adversely affected. . Further, as will be described later, when a light source having a wavelength at which the photoconductor has no sensitivity is used, a transparent conductive film may be used instead of the metal film 24.

In the above-mentioned embodiments of the inventions of claims 1 and 2, as the light source which passes through the optical waveguide and is used for detecting the deformation of the optical waveguide, the emission wavelength thereof is a wavelength at which the photoreceptor sample has no sensitivity. Are preferred. Further, the light receiving element is preferably sensitive to this emission wavelength. Here, for example, when the photoconductor is a photoconductor used for electrophotography, examples of appropriate light sources and light receiving elements will be described below.

FIG. 6 shows the spectral sensitivities of well-known typical photoconductors used in electrophotography, where Se is Se,
Is a mixture of zinc sulfide and cadmium sulfide, and is an organic photoreceptor (polyvinylcarbazole and trinitrofliorenone 1:
1 is a positively charged substance, is a positively charged organic photoreceptor (similar substance), and is L
PC (Layered Photo Conductor) {c with a thickness of about 0.1 μm
Membrane C of a mixture of hlorodiane blue and diphenylhydrazone
Approximately 15 μm C on the GL (Charge Generation Layer)
A stack of TLs (Charge Transport Layers).

As is apparent from FIG. 6, the wavelength is 400n.
Near m, the mixture of zinc sulfide with Se and cadmium sulfide has a particularly high sensitivity. Also, 6
In the vicinity of 00 nm, the LPC has a particularly high sensitivity. In addition, the positively charged organic photoreceptor has a sensitivity near 600 nm, and the negatively charged organic photoreceptor has a sensitivity of 400 nm.
It has sensitivity in the range of nm to 600 nm.

From this, it can be seen that the photoconductor has no sensitivity to light having a wavelength of 600 nm or more. Therefore,
For this reason, a light source that emits light having a wavelength of 600 nm or more and a light receiving element that has sensitivity to the wavelength of 600 nm or more are used. Further, from the viewpoint of giving a certain degree of margin to the spectral sensitivity, it is preferable to use a light source and a light receiving element that emit light of 900 nm or more. This 90
Light sources and elements corresponding to wavelengths of 0 nm or more include those shown in Tables 1 and 2 below.

[0029]

[Table 1]

[0030]

[Table 2]

As the light source and the light receiving element corresponding to the wavelength of 600 nm or more, in addition to the light source and the light receiving element corresponding to the wavelength of 900 nm or more, there are those as shown in Tables 3 and 4 below.

[0032]

[Table 3]

[0033]

[Table 4]

Further, in FIG. 6, the substance (1) has a low sensitivity to a wavelength of 400 nm or less,
A light source having a wavelength of 400 nm or less and a light receiving element having sensitivity to this wavelength are used. Examples of the light source and the light receiving element corresponding to the wavelength of 400 nm or less include those shown in Tables 5 and 6 below.

[0035]

[Table 5]

[0036]

[Table 6]

As described above, light having a wavelength which does not have the spectral sensitivity of the photoconductor is used, and various types of light sources and light receiving elements are used in combination with ones having the emission wavelength and the wavelength having the spectral sensitivity in combination. When the deformation of the optical waveguide of each probe device shown in the example is detected, the state of electrostatic latent image formation on the photoconductor is not disturbed, which eliminates measurement error and reduces the surface potential of the photoconductor. Can be measured.

In addition, regarding the third embodiment of the invention of claim 2 which is not shown in FIGS. 2, 4 and 4 and which is not shown, if a light source and a light receiving element are used in combination as described above, the Since it does not affect the photoconductor even if it leaks from the optical waveguide, a transparent conductive film can be used instead of the metal coat.

[0039]

As described above, according to the first aspect of the present invention, the first optical waveguide (having a cantilever structure), which is movable with respect to the substrate and to which the probe is connected, and the first optical waveguide. Since the probe device for a measuring instrument has an end face facing the end face of the waveguide, and a second optical waveguide fixed to the substrate, atomic force, magnetic force, electrostatic attraction, etc. Can detect a small force, and the deformation of the cantilever due to Joule heat does not occur unlike the case of using the conventional resistance element, and the wiring part and the force detection part can be simplified. be able to. In addition, a large number of optical waveguides having a cantilever structure can be formed on a substrate at a time by a semiconductor manufacturing process with good uniformity. Also, to capture the deformation of the cantilever, it is not necessary to use a long optical path length as in the optical lever method.
Arraying becomes possible. Therefore, by using the apparatus of the present invention, it is possible to realize a physical quantity measuring apparatus that is compact and enables multipoint simultaneous measurement, that is, high-speed measurement.

According to a second aspect of the present invention, a first optical waveguide (having a cantilever structure or a double-supported beam structure) that is movable and has a probe connected to the substrate, and a second optical waveguide that is fixed to the substrate. Of the optical waveguide and the light propagating in the first optical waveguide and the light propagating in the second optical waveguide are arranged at a position on the substrate where these two optical waveguides merge so as to cause interference. Since it is a probe device for a measuring instrument characterized by including a third optical waveguide, it is possible to detect minute forces such as atomic force, magnetic force, electrostatic attraction, etc. The deformation of the cantilever due to Joule heat does not occur as in the case of using, and the wiring portion and the force detection portion can be simplified. In addition, it is possible to manufacture a large number of optical waveguides having a cantilever structure or a double-supported beam structure on a substrate at a time by a semiconductor manufacturing process with good uniformity. Further, since it is not necessary to have a long optical path length as in the optical lever method in order to capture the deformation of the cantilever beam or the both-end beam, it is possible to reduce the size and form an array. Therefore, by using the apparatus of the present invention, it is possible to realize a physical quantity measuring apparatus that is compact and enables multipoint simultaneous measurement, that is, high-speed measurement.

[Brief description of drawings]

1A and 1B are views for explaining a first embodiment of the invention according to claim 1, wherein FIG. 1A is a perspective view of a probe device for a measuring instrument, and FIG. 1B is for a measuring instrument shown in FIG. It is sectional drawing of the II line part of a probe apparatus.

FIG. 2 is a view for explaining the second embodiment of the invention according to claim 1, and is a cross-sectional view of the probe device for a measuring instrument corresponding to the II line portion of FIG. 1 (a). .

3A and 3B are views for explaining a first embodiment of the invention according to claim 2, wherein FIG. 3A is a perspective view of a probe device for a measuring instrument, and FIG. 3B is for a measuring instrument shown in FIG. It is sectional drawing of the II-II line part of a probe apparatus.

FIG. 4 is a view for explaining the second embodiment of the invention according to claim 2, and is a cross-sectional view of the probe device for a measuring instrument corresponding to the II-II line portion of FIG. 3 (a). .

FIG. 5 is a diagram for explaining the third embodiment of the invention as set forth in claim 2, and is a perspective view of a probe device for a measuring instrument.

FIG. 6 is a diagram showing the spectral sensitivity with respect to wavelength of a well-known representative photoconductor used for electrophotography.

7A and 7B are diagrams showing an example of a conventional technique, in which FIG. 7A is a sectional view of a probe device for a measuring instrument, and FIG. 7B is a plan view of a main part of the probe device for a measuring instrument.

FIG. 8 is a diagram showing another example of the prior art and is a perspective view of an optical IC sensor using a cantilever and an optical waveguide.

9 is an explanatory diagram of an operation principle of the sensor shown in FIG.

FIG. 10 is a diagram showing still another example of the prior art,
(A) is a perspective view of an optical IC sensor using a cantilever and an optical waveguide, and (b) is a sectional view taken along the line AA of the sensor shown in (a).

FIG. 11 is a diagram showing still another example of the prior art,
It is a perspective view of an optical IC sensor using a substrate having a deformation region and an optical waveguide.

12 is an explanatory diagram of the operating principle of the sensor shown in FIG.

FIG. 13 is a diagram showing still another example of the prior art,
It is a perspective view of another example of an optical IC sensor using a substrate having a deformation region and an optical waveguide.

14 is an explanatory diagram of an operating principle of the sensor shown in FIG.

[Explanation of symbols]

 9 substrate 11 first optical waveguide 11a end face on the movable part side of the first optical waveguide 12 fixing part 13 second optical waveguide 13a second end face of the optical waveguide 14 substrate 16 first optical waveguide 17 fixing part 18th Second optical waveguide 19 Third optical waveguide 20 Third optical waveguide 21 Third optical waveguide 23 Probe 24 Conductive film (metal film etc.) 25 Lead wire

Claims (2)

[Claims] 1. A second optical waveguide fixed to the substrate, having a first optical waveguide movably with respect to the substrate and having a probe connected thereto, and an end face facing the end face of the first optical waveguide. A probe device for a measuring instrument, comprising a waveguide. 2. A first optical waveguide which is movable with respect to a substrate and to which a probe is connected, a second optical waveguide fixed to the substrate, light propagating through the first optical waveguide and the first optical waveguide. A probe for a measuring instrument, comprising: a third optical waveguide arranged at a position on the substrate where these two optical waveguides merge so as to cause interference with light propagating through the second optical waveguide. Needle device.