JPH09183050A - Substrate chamfering device - Google Patents

Substrate chamfering device

Info

Publication number
JPH09183050A
JPH09183050A JP35223195A JP35223195A JPH09183050A JP H09183050 A JPH09183050 A JP H09183050A JP 35223195 A JP35223195 A JP 35223195A JP 35223195 A JP35223195 A JP 35223195A JP H09183050 A JPH09183050 A JP H09183050A
Authority
JP
Japan
Prior art keywords
substrate
chamfering
peripheral portion
diameter
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP35223195A
Other languages
Japanese (ja)
Inventor
Manabu Shibata
学 柴田
Akira Noda
章 野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Priority to JP35223195A priority Critical patent/JPH09183050A/en
Publication of JPH09183050A publication Critical patent/JPH09183050A/en
Withdrawn legal-status Critical Current

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  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

PROBLEM TO BE SOLVED: To enhance productivity by performing total inspection while easily stabilizing the diameters, roundness, and concentricity of the inner and outer circumferences of a substrate to accurate values inside a machine in chamfering the substrate using a chamfering machine. SOLUTION: This substrate chamfering device 10 has a measuring device 12, for continuously measuring the diameters of the inner and outer circumferences of a substrate machined by a chamfering machine 11, and a measurement processing device 13 which calculates the average diameters, maximum diameters, minimum diameters and roundness of the inner and outer circumferences and concentricity of the inner and outer circumferences from the measurements transmitted from the measuring device 12, and measuring elements in the measuring device 12 which make contact with the inner and outer circumferences of the substrate are made of diamond.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、ハードディスク用
基板に代表される記録媒体用基板の面取加工装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chamfering apparatus for a recording medium substrate represented by a hard disk substrate.

【0002】[0002]

【従来の技術】従来、磁気ディスク用基板は、内外周端
面に面取加工が施されている。これは、磁気ディスクの
製造過程等において、ディスクを所定の位置に搬送する
ために持ち上げたりするとき、ディスクに傷が入るのを
防ぐ等のためである。
2. Description of the Related Art Conventionally, a magnetic disk substrate is chamfered on its inner and outer peripheral end faces. This is to prevent the disk from being scratched when the disk is lifted to be conveyed to a predetermined position in the manufacturing process of the magnetic disk or the like.

【0003】そして、従来技術では、面取加工された基
板をその面取加工後に抜き取り、基板の内周部及び外周
部の直径、真円度、同芯度を測定装置により測定し、測
定結果が許容範囲外にあるものを廃棄することとしてい
る。
In the prior art, the chamfered substrate is extracted after the chamfering process, and the diameter, roundness, and concentricity of the inner and outer peripheral portions of the substrate are measured by a measuring device, and the measurement result is obtained. Those that are out of the allowable range will be discarded.

【0004】このとき、従来技術では、上記測定装置が
基板の内周部もしくは外周部に圧接する測定子を有し、
この測定子を超硬合金により形成している。
At this time, in the prior art, the above-mentioned measuring device has a tracing stylus which is in pressure contact with the inner peripheral portion or the outer peripheral portion of the substrate,
This probe is made of cemented carbide.

【0005】[0005]

【発明が解決しようとする課題】然しながら、基板の面
取加工時には、砥石が多数の基板の面取加工を進めてい
くうちにその寿命低下を生じ、結果として基板の内周部
及び外周部の加工寸法精度が次第に悪くなる。このた
め、加工後の抜き取り検査で加工不良の発生に気付くと
きには、既に多数の真円度不良や同芯度不良の不良品が
生産済になっていることがある。
However, during chamfering of substrates, the life of the grindstone decreases as the chamfering of a large number of substrates progresses, and as a result, the inner and outer peripheral portions of the substrate are Machining dimensional accuracy gradually deteriorates. For this reason, when it is noticed that a processing defect occurs in the sampling inspection after processing, a large number of defective products having defective circularity and defective concentricity may have already been produced.

【0006】尚、磁気ディスク用基板において真円度や
同芯度に不良を生じたものは、磁気ディスクの回転む
ら、データエラーを生じ易くなる。特に、磁気ディスク
のトラック密度が高いものにあっては、磁気ディスクの
トラックに対する磁気ヘッドの追従性が悪くなる。
A magnetic disk substrate having a defective circularity or concentricity is likely to cause uneven rotation of the magnetic disk and a data error. In particular, when the track density of the magnetic disk is high, the followability of the magnetic head to the track of the magnetic disk becomes poor.

【0007】また、測定装置の測定子が超硬合金からな
るため、測定子100による測定の繰り返しにより測定
子100の摩耗が図14(A)に示す如くに進行し、測
定回数が例えば10万回を越えると、図14(B)に示す
如く、測定装置の測定誤差Δ(実際の値と測定値との
差)が顕著に大となる。このことは、測定装置の信頼性
を低くし、測定したにもかかわらず測定ミスに起因の不
良品を生産するものとなって生産性を阻害する。
Further, since the measuring element of the measuring device is made of cemented carbide, wear of the measuring element 100 progresses as shown in FIG. When it exceeds the number of times, as shown in FIG. 14B, the measurement error Δ (difference between the actual value and the measured value) of the measuring device becomes remarkably large. This lowers the reliability of the measuring device and produces a defective product due to a measurement error despite the measurement, which hinders the productivity.

【0008】本発明の課題は、面取加工機により基板の
面取加工を行なうに際し、基板の内周部及び外周部の直
径、真円度、同芯度を機内で簡易に正確な値を安定して
全数検査し、生産性を向上可能とすることにある。ま
た、上記検査結果に応じて不良品を機外に排出するとと
もに砥石寿命を判断することにある。
An object of the present invention is to easily and accurately determine the diameter, roundness, and concentricity of the inner and outer peripheral portions of a substrate when the substrate is chamfered by a chamfering machine. The aim is to make it possible to consistently perform 100% inspection and improve productivity. Further, the defective product is discharged to the outside of the machine and the life of the grindstone is judged according to the inspection result.

【0009】[0009]

【課題を解決するための手段】請求項1に記載の本発明
は、ドーナツ状基板の端面に面取加工する基板の面取加
工装置において、砥石を備え、この砥石にて上記基板の
端面に面取加工する面取加工機と、上記面取加工機にて
加工された基板の内周部及び外周部の直径を連続的に測
定する測定装置と、上記測定装置からの測定結果より内
周部及び外周部の平均直径、最大直径、最小直径及び真
円度と、内周部と外周部の同芯度を算出する測定処理装
置とを有し、上記測定装置における基板の内周部もしく
は外周部に接する測定子がダイヤモンドからなるように
したものである。
The present invention according to claim 1 is a substrate chamfering device for chamfering an end face of a donut-shaped substrate, which is provided with a grindstone, and the grindstone is used for the end face of the substrate. Chamfering machine for chamfering, measuring device for continuously measuring the inner and outer diameters of the substrate processed by the chamfering machine, and the inner circumference from the measurement result from the measuring device The average diameter, the maximum diameter, the minimum diameter and the circularity of the portion and the outer peripheral portion, and a measurement processing device for calculating the concentricity of the inner peripheral portion and the outer peripheral portion, the inner peripheral portion of the substrate in the measuring device or The probe contacting the outer circumference is made of diamond.

【0010】請求項2に記載の本発明は、請求項1に記
載の本発明において更に、前記測定処理装置が算出した
平均直径、最大直径、最小直径、真円度及び同芯度が適
切であるか否かを判別し、不適切な場合には廃棄信号を
出力し、前記面取加工機が該廃棄信号に基づき不適切な
面取形状の基板を面取加工機の機外へ廃棄させる手段を
有するものである。
According to the present invention of claim 2, in addition to the invention of claim 1, the average diameter, the maximum diameter, the minimum diameter, the roundness and the concentricity calculated by the measurement processing device are appropriate. It is determined whether or not there is any, and if it is inappropriate, a discard signal is output, and the chamfering machine discards the substrate having an improper chamfered shape out of the chamfering machine based on the discard signal. It has a means.

【0011】請求項3に記載の本発明は、請求項1又は
2に記載の本発明において更に、前記測定処理装置が算
出した同芯度及び真円度の測定結果が不適切である加工
基板が一定の期間に特定枚数排出されたとき、砥石の寿
命とみなして砥石の交換時期を知らせる手段を有するも
のである。
According to a third aspect of the present invention, in the present invention according to the first or second aspect, further, the processed substrate in which the measurement results of the concentricity and the roundness calculated by the measurement processing device are inappropriate. When a specific number of sheets are discharged in a certain period, it is regarded as the life of the grindstone and means for notifying the replacement time of the grindstone is provided.

【0012】請求項4に記載の本発明は、請求項1〜3
のいずれかに記載の本発明において更に、前記基板が非
金属材料にて構成されたものである。
The present invention described in claim 4 is the first to third aspects of the present invention.
In any one of the present inventions, the substrate is made of a non-metallic material.

【0013】請求項1に記載の本発明によれば下記、
の作用がある。 面取加工機にて加工された基板の内周部及び外周部の
直径を連続的に測定する測定装置と、この測定値からの
測定結果より内周部及び外周部の平均直径、最大直径、
最小直径及び真円度と、内周部と外周部の同芯度を算出
する測定処理装置とを有している。従って、基板の内周
部及び外周部の直径、真円度、同芯度を機内で簡易に全
数検査できる。
According to the first aspect of the present invention,
Has the effect of Measuring device for continuously measuring the diameter of the inner peripheral portion and the outer peripheral portion of the substrate processed by the chamfering machine, the average diameter of the inner peripheral portion and the outer peripheral portion from the measurement results from this measurement value, the maximum diameter,
It has a minimum diameter and roundness, and a measurement processing device for calculating the concentricity of the inner peripheral portion and the outer peripheral portion. Therefore, it is possible to easily inspect all the diameters, roundness, and concentricity of the inner peripheral portion and the outer peripheral portion of the substrate in the machine.

【0014】測定装置の測定子がダイヤモンドからな
るため、加工された基板を全数検査すべく、測定子によ
る測定を繰り返しても、測定子の耐久性向上によりその
摩耗が長期に渡って進行せず、測定装置の測定誤差(実
際の値と測定値との差)は長期に渡って無視できる程度
に小さいものとなる。このため、測定装置は、長期に渡
って正確な測定値を安定して出力でき、測定の信頼性を
向上し、加工の生産性を向上できる。
Since the measuring elements of the measuring device are made of diamond, even if the measuring elements are repeatedly measured in order to inspect all the processed substrates, the abrasion of the measuring elements does not progress for a long period of time. The measurement error of the measuring device (difference between the actual value and the measured value) becomes negligibly small over a long period of time. Therefore, the measuring device can stably output an accurate measured value over a long period of time, improve measurement reliability, and improve processing productivity.

【0015】請求項2に記載の本発明によれば下記の
作用がある。 測定処理装置が算出した平均直径、最大直径、最小直
径、真円度及び同芯度が不適切な基板(面取形状不良基
板)は、面取加工機の制御により機外へ廃棄される。従
って、不良基板が面取加工後の下工程へ搬送されて無駄
な加工を施されることがなく、生産性向上できる。
According to the second aspect of the present invention, the following operations are provided. A substrate (a substrate with a bad chamfered shape) having an inappropriate average diameter, maximum diameter, minimum diameter, roundness, and concentricity calculated by the measurement processing device is discarded outside the machine under the control of the chamfering machine. Therefore, the defective substrate is not conveyed to a lower process after the chamfering process and is not subjected to useless processing, and the productivity can be improved.

【0016】請求項3に記載の本発明によれば下記の
作用がある。 基板の同芯度及び真円度は砥石の切削性に強く影響さ
れる。従って、測定処理装置が算出した真円度及び同芯
度の不良が一定の期間に特定枚数排出されたことを監視
することにより、砥石の寿命を判定し、砥石交換時期を
簡易且つ合理的に知ることができる。
According to the third aspect of the present invention, the following effects are obtained. The concentricity and roundness of the substrate are strongly influenced by the machinability of the grindstone. Therefore, by monitoring that the specified number of defective circularity and concentricity defects calculated by the measurement processing device are discharged within a certain period, the life of the grindstone is determined, and the grindstone replacement time can be easily and reasonably determined. I can know.

【0017】請求項4に記載の本発明によれば下記の
作用がある。 基板がカーボン基板、強化ガラス、結晶化ガラス、セ
ラミック、シリコン等の脆性非金属材料からなるとき、
砥石の切削性が基板の加工寸法精度に特に強く影響す
る。従って、非金属材料からなる基板に対し上記〜
の作用を得ることは、基板の加工精度向上、生産性向上
に特に有用となる。
According to the present invention, there is provided the following operation. When the substrate is made of a brittle non-metallic material such as carbon substrate, tempered glass, crystallized glass, ceramic, silicon,
The machinability of the grindstone has a particularly strong influence on the processing dimensional accuracy of the substrate. Therefore, for substrates made of non-metallic materials,
It is particularly useful to improve the processing accuracy and productivity of the substrate.

【0018】[0018]

【発明の実施の形態】図1は面取加工装置を示すブロッ
ク図、図2は面取加工機の一例を示す平面図、図3は図
1の正面図、図4は図1の側面図、図5は砥石による面
取加工状態を示す模式図、図6は基板の面取形状を示す
模式図、図7は測定装置を示す模式図、図8は図7のVI
II-VIII 線に沿う矢視図、図9は外径測定機を示す模式
図、図10は内径測定機を示す模式図、図11は測定機
の内部構造を示す模式図、図12は外径測定機の測定子
の作動を示す模式図、図13は内径測定機の測定子の作
動を示す模式図である。
1 is a block diagram showing a chamfering machine, FIG. 2 is a plan view showing an example of a chamfering machine, FIG. 3 is a front view of FIG. 1, and FIG. 4 is a side view of FIG. 5, FIG. 5 is a schematic diagram showing a chamfering processing state by a grindstone, FIG. 6 is a schematic diagram showing a chamfered shape of a substrate, FIG. 7 is a schematic diagram showing a measuring device, and FIG. 8 is a VI of FIG.
FIG. 9 is a schematic diagram showing an outer diameter measuring machine, FIG. 10 is a schematic diagram showing an inner diameter measuring machine, FIG. 11 is a schematic diagram showing an internal structure of the measuring machine, and FIG. 12 is an outer view. FIG. 13 is a schematic diagram showing the operation of the gauge head of the diameter measuring machine, and FIG. 13 is a schematic diagram showing the operation of the gauge head of the inner diameter measuring machine.

【0019】基板の面取加工装置としての基板の内外径
・面取加工装置10は、図1に示すように、ドーナツ状
基板1の外径端面3及び内径端面5並びにそれらの面取
部3A、5Aを研削加工する内外径・面取加工機11
と、基板1の内径及び外径を測定する測定装置12と、
この測定装置12からの測定データを処理する測定処理
装置13と、内外径・面取加工機11を制御する制御装
置14とを有して構成される。
As shown in FIG. 1, a substrate inner / outer diameter / chamfering device 10 as a substrate chamfering device includes an outer diameter end face 3 and an inner diameter end face 5 of a donut-shaped substrate 1 and their chamfered portions 3A. Inner / outer diameter / chamfering machine 11 for grinding 5A
And a measuring device 12 for measuring the inner diameter and the outer diameter of the substrate 1,
A measurement processing device 13 for processing the measurement data from the measurement device 12 and a control device 14 for controlling the inner / outer diameter / chamfering machine 11 are configured.

【0020】内外径・面取加工機11は、図2〜図4に
示すように、機台15に設置されて4等分位置に保持台
16を備え、矢印A方向に回転する回転テーブル17
と、機台15の第1ステージに設置されて、保持台16
に基板1を搬出入する供給回収ユニット18と、機台1
5の第2ステージに設置されて、基板1の外径3及びこ
の外径3の面取部3Aを研削加工する外径・面取加工ユ
ニット19と、機台15の第3ステージに設置され、基
板1の内径5及びこの内径5の面取部5Aを研削加工す
る内径・面取加工ユニット20とを備えて構成され、上
記制御装置14が回転テーブル17、供給回収ユニット
18、外径・面取加工ユニット19及び内径・面取加工
ユニット20の作動を制御する。
As shown in FIGS. 2 to 4, the inner / outer diameter / chamfering machine 11 is installed on a machine base 15 and is provided with a holding table 16 at four equal positions, and a rotary table 17 which rotates in the direction of arrow A.
And the holding table 16 installed on the first stage of the machine base 15.
Supply / recovery unit 18 for loading / unloading the substrate 1 into / from the machine base 1
5, the outer diameter / chamfering unit 19 for grinding the outer diameter 3 of the substrate 1 and the chamfered portion 3A having the outer diameter 3, and the third stage of the machine base 15. , The inner diameter 5 of the substrate 1 and an inner diameter / chamfering processing unit 20 for grinding the chamfered portion 5A of the inner diameter 5, and the control device 14 includes a rotary table 17, a supply / recovery unit 18, and an outer diameter. The operations of the chamfering processing unit 19 and the inner diameter / chamfering processing unit 20 are controlled.

【0021】供給回収ユニット18は、機台15の第1
ステージにおいて、ローダアーム21を用い、供給カセ
ット22内の未加工の基板1を回転テーブル17の保持
台16に載置させ、また、アンローダアーム23を用い
て、加工済の基板1を保持台16から回収カセット24
内へ回収する。
The supply / recovery unit 18 is a first unit of the machine base 15.
On the stage, the loader arm 21 is used to place the unprocessed substrate 1 in the supply cassette 22 on the holding table 16 of the rotary table 17, and the unloader arm 23 is used to hold the processed substrate 1 on the holding table 16. Collection cassette 24 from
Collect inside.

【0022】回転テーブル17上の保持台16は、載置
された基板1を吸着する。機台15の第2及び第3ステ
ージには、治具クランプ装置25が設置されて、保持台
16に吸着された基板1へ油圧又は水圧の作用で押圧力
を付与し、この基板1を保持台16にクランプする。ま
た、機台15には、第1、第2、第3及び第4ステージ
にステージ認識スイッチ26が設置されて、回転テーブ
ル17の回転により保持台16が各ステージに至ったこ
とが確認される。
The holding table 16 on the rotary table 17 sucks the placed substrate 1. A jig clamp device 25 is installed on the second and third stages of the machine base 15, and a pressing force is applied to the substrate 1 attracted by the holding base 16 by the action of hydraulic pressure or water pressure to hold the substrate 1. Clamp on the base 16. In addition, stage recognition switches 26 are installed on the first, second, third and fourth stages of the machine base 15, and it is confirmed that the holding table 16 has reached each stage by the rotation of the rotary table 17. .

【0023】外径・面取加工ユニット19及び内径・面
取加工ユニット20はほぼ同様に構成され、多段砥石2
7及びこの多段砥石27を回転させる砥石用モータ28
は、昇降部29及び水平移動部30を介して、機台15
の中央コラム31に設置される。水平移動部30の水平
スライダ35に昇降部29が設置され、この昇降部29
の昇降スライダ33に多段砥石27及び砥石用モータ2
8が設置される。昇降部29は、昇降用モータ32によ
って昇降スライダ33を昇降(Z方向に移動)させ、多
段砥石27を同方向に移動する(送る)ものである。水
平移動部30は、水平移動用モータ34によって水平ス
ライダ35を水平方向(X方向)に移動させ、多段砥石
27を同方向に移動する(送る)ものである。
The outer diameter / chamfering processing unit 19 and the inner diameter / chamfering processing unit 20 have substantially the same structure.
7 and a grindstone motor 28 for rotating the multi-step grindstone 27
Through the elevating part 29 and the horizontal moving part 30.
It is installed in the central column 31 of. The elevating part 29 is installed on the horizontal slider 35 of the horizontal moving part 30.
The multi-step grindstone 27 and the grindstone motor 2 are attached to the lifting slider 33 of
8 is installed. The elevating part 29 moves (sends) the multi-step grinding wheel 27 in the same direction by moving the elevating slider 33 up and down (moving in the Z direction) by the elevating motor 32. The horizontal moving unit 30 moves the horizontal slider 35 in the horizontal direction (X direction) by the horizontal moving motor 34 to move (send) the multi-step grindstone 27 in the same direction.

【0024】ここで、外径・面取加工ユニット19と内
径・面取加工ユニット20の各多段砥石27は、基板1
の外径端面3及び内径端面5の研削加工と同時に、これ
らの外径端面3及び内径端面5に面取部3A、5Aを研
削加工する。図5(A)に示す多段砥石27は、基板1
の外径端面3及び面取部3A(図6)を同時に研削加工
する多数の使用段を備え、図5(B)に示す多段砥石2
7は、基板1の内径端面5及び面取部5A(図6)を同
時に研削加工する多数の使用段を備える。
Here, each multi-step grindstone 27 of the outer diameter / chamfering processing unit 19 and the inner diameter / chamfering processing unit 20 is the substrate 1
At the same time that the outer diameter end surface 3 and the inner diameter end surface 5 are ground, the chamfered portions 3A and 5A are ground on the outer diameter end surface 3 and the inner diameter end surface 5. The multi-step grindstone 27 shown in FIG.
The multi-step grindstone 2 shown in FIG. 5B is provided with a large number of steps for simultaneously grinding the outer diameter end surface 3 and the chamfered portion 3A (FIG. 6).
7 is provided with a large number of steps for simultaneously grinding the inner diameter end surface 5 of the substrate 1 and the chamfered portion 5A (FIG. 6).

【0025】次に、この外径・面取加工ユニット19と
内径・面取加工ユニット20の各多段砥石27を用いた
内外径・面取加工機11の研削動作について説明する。
制御装置14は、図2に示す第1ステージにおいて、回
転テーブル17の保持台16上の加工済基板1をアンロ
ーダアーム23を作動させて回収カセット24に回収さ
せ、その後、ローダアーム21を作動させて、供給カセ
ット22内の未加工基板1を保持台16上に載置させ、
吸着させる。
Next, the grinding operation of the inner / outer diameter / chamfering machine 11 using the multi-step grindstones 27 of the outer diameter / chamfering processing unit 19 and the inner diameter / chamfering processing unit 20 will be described.
In the first stage shown in FIG. 2, the controller 14 operates the unloader arm 23 to recover the processed substrate 1 on the holding table 16 of the rotary table 17 into the recovery cassette 24, and then operates the loader arm 21. To place the unprocessed substrate 1 in the supply cassette 22 on the holding table 16,
Adsorb.

【0026】制御装置14は、回転テーブル17を90度
回転させて、未加工基板1を保持した保持台16が第2
ステージに至ると、ステージ認識スイッチ26がオン作
動してその位置を確認する。更に、制御装置14は、保
持台16にて基板1が吸着されていることを確認した
後、治具クランプ装置25を作動させ、この治具クラン
プ装置25による基板1のクランプを確認する。
The controller 14 rotates the rotary table 17 by 90 degrees so that the holding table 16 holding the unprocessed substrate 1 moves to the second position.
When the stage is reached, the stage recognition switch 26 is turned on to confirm its position. Further, after confirming that the substrate 1 is adsorbed by the holding table 16, the control device 14 operates the jig clamp device 25 and confirms the clamping of the substrate 1 by the jig clamp device 25.

【0027】制御装置14は、その後、保持台16を介
して基板1を回転させ、外径・面取加工ユニット19に
おける砥石用モータ28を作動して多段砥石27を回転
させる。制御装置14は、これらの基板1及び多段砥石
27の回転確認後、多段砥石27を所定の送り量だけZ
方向に移動させた後、X方向に所定の送り量だけ移動さ
せて、基板1の外径端面3を研削し、同時に、その外径
端面3に面取部3Aを研削加工する。
Thereafter, the controller 14 rotates the substrate 1 via the holding table 16 and operates the grindstone motor 28 in the outer diameter / chamfering processing unit 19 to rotate the multi-step grindstone 27. After confirming the rotations of the substrate 1 and the multi-step grindstone 27, the controller 14 moves the multi-step grindstone 27 by a predetermined feed amount Z.
After being moved in the X direction, the outer diameter end surface 3 of the substrate 1 is ground by moving a predetermined feed amount in the X direction, and at the same time, the chamfered portion 3A is ground on the outer diameter end surface 3.

【0028】制御装置14は、回転テーブル17をその
後90度回転させて、外径端面3及び面取部3Aが加工さ
れた基板1が第3ステージに至ったときに、ステージ認
識スイッチ26にてこの位置を認識し、基板1を保持台
16に吸着させ、治具クランプ装置25にて基板1をク
ランプし、内径・面取加工ユニット20の多段砥石27
により、外径・面取加工ユニット19と同様にして、基
板1の内径端面5とその内径端面5の面取部5Aを同時
に研削加工する。
The control device 14 rotates the rotary table 17 by 90 degrees thereafter, and when the substrate 1 on which the outer diameter end surface 3 and the chamfered portion 3A are processed reaches the third stage, uses the stage recognition switch 26. Recognizing this position, the substrate 1 is attracted to the holding table 16, the substrate 1 is clamped by the jig clamp device 25, and the multi-step grindstone 27 of the inner diameter / chamfering processing unit 20 is clamped.
Thus, similarly to the outer diameter / chamfering unit 19, the inner diameter end surface 5 of the substrate 1 and the chamfered portion 5A of the inner diameter end surface 5 are simultaneously ground.

【0029】然るに、機台15の第4ステージには、前
述の測定装置12が設置されており、面取加工された基
板1の内周部及び外周部の直径を連続的に測定すること
としている。
However, the above-mentioned measuring device 12 is installed on the fourth stage of the machine base 15, and the diameters of the inner peripheral portion and the outer peripheral portion of the chamfered substrate 1 are continuously measured. There is.

【0030】測定装置12は、図7に示す如く、機台1
5の中央コラム31にリニアガイド41を介して、昇降
シリンダ42により昇降せしめられる昇降台43を備え
ており、昇降台43に外径測定機44、内径測定機45
を有している。測定装置12は、回転テーブル17の回
転により、基板1が第4ステージに位置付けられたと
き、測定機44、45を上昇位置から基板対応位置に下
降し、基板1の内周部及び外周部の直径を測定する。
The measuring device 12 is, as shown in FIG.
The center column 31 of No. 5 is equipped with an elevating table 43 that can be elevated and lowered by an elevating cylinder 42 via a linear guide 41. The elevating table 43 has an outer diameter measuring machine 44 and an inner diameter measuring machine 45.
have. When the substrate 1 is positioned on the fourth stage by the rotation of the rotary table 17, the measuring device 12 lowers the measuring machines 44 and 45 from the raised position to the substrate corresponding position, and detects the inner peripheral portion and the outer peripheral portion of the substrate 1. Measure the diameter.

【0031】外径測定機44は、図8、図9、図11に
示す如く、一対の、ダイヤモンドからなる外径測定子5
1を有している。各外径測定子51はスイングアーム5
2に取り付けられ、スイングアーム52はL型板ばね式
支点53に揺動自在に支持されている。また、スイング
アーム52は測定圧調整用引張ばね54により外径測定
子51が基板1の外周部に圧接する方向に弾発されて外
径測定子51を測定作業位置に設定し(図12
(A))、且つ非測定時にはリリーフアクチュエータ5
5により外径測定子51を測定圧調整用引張ばね54の
弾発力に抗して基板1の外周部から離隔して外径測定子
51を待機位置に設定可能としている(図12
(B))。また、スイングアーム52は外径測定子51
が基板1の外周部に圧接したときの外径測定子51の位
置を検出するための差動トランス56を備えている。こ
れにより、外径測定機44は基板1の外径を以下の如く
により測定する。
As shown in FIGS. 8, 9 and 11, the outer diameter measuring device 44 includes a pair of outer diameter measuring elements 5 made of diamond.
One. Each outer diameter measuring element 51 is a swing arm 5.
2, the swing arm 52 is swingably supported by an L-shaped leaf spring fulcrum 53. In addition, the swing arm 52 is elastically urged by the measuring pressure adjusting tension spring 54 in a direction in which the outer diameter measuring element 51 is pressed against the outer peripheral portion of the substrate 1 to set the outer diameter measuring element 51 to the measurement work position (FIG. 12).
(A)), and the relief actuator 5 when not measuring
5, the outer diameter measuring element 51 is separated from the outer peripheral portion of the substrate 1 against the elastic force of the measurement pressure adjusting tension spring 54 so that the outer diameter measuring element 51 can be set to the standby position (FIG. 12).
(B)). Further, the swing arm 52 is the outer diameter measuring element 51.
Is provided with a differential transformer 56 for detecting the position of the outer diameter probe 51 when it is pressed against the outer peripheral portion of the substrate 1. Thereby, the outer diameter measuring machine 44 measures the outer diameter of the substrate 1 as follows.

【0032】(1) 外径測定機44の一対の外径測定子5
1を待機位置に設定した状態で、それら一対の外径測定
子51の間に、標準内外径及び理想的な真円度及び同芯
度の標準基板を配置する。その後、一対の外径測定子5
1を測定作業位置に設定し、そのときの両外径測定子5
1に対応する差動トランス56の出力G1 、G2 を零設
定する。
(1) A pair of outer diameter measuring elements 5 of the outer diameter measuring device 44
With 1 set in the standby position, a standard substrate having a standard inner / outer diameter and ideal roundness and concentricity is arranged between the pair of outer diameter measuring elements 51. After that, a pair of outer diameter probe 5
1 is set to the measurement work position, and both outer diameter probe 5 at that time
The outputs G 1 and G 2 of the differential transformer 56 corresponding to 1 are set to zero.

【0033】(2) 外径測定機44の一対の外径測定子5
1を待機位置に設定した状態で、外径測定機44を基板
対応位置に設定する。その後、一対の外径測定子51を
測定作業位置に設定し、外径測定子51を基板1の外周
部に圧接した状態で基板1を回転させ、そのときの両外
径測定子51に対応する差動トランス56の出力G1、
2 を基板1の周方向の多数の測定点で連続的に得て、外
径測定値とする。
(2) A pair of outer diameter measuring elements 5 of the outer diameter measuring device 44
With 1 set to the standby position, the outer diameter measuring device 44 is set to the substrate corresponding position. After that, the pair of outer diameter measuring elements 51 is set to the measurement work position, and the substrate 1 is rotated in a state where the outer diameter measuring element 51 is pressed against the outer peripheral portion of the substrate 1 and corresponds to both outer diameter measuring elements 51 at that time. Outputs of differential transformer 56 G 1, G
2 is continuously obtained at a large number of measurement points in the circumferential direction of the substrate 1 and used as the outer diameter measurement value.

【0034】内径測定機45は、図8、図10に示す如
く、一対の、ダイヤモンドからなる内径測定子61を有
している。各内径測定子61はスイングアーム62に取
り付けられ、スイングアーム62はL型板ばね式支点
(外径測定機44の支点53に相当)に揺動自在に支持
されている。また、スイングアーム62は測定圧調整用
引張ばね(外径測定機44の測定圧調整用引張ばね54
に相当)により内径測定子61が基板1の内周部に圧接
する方向に弾発されて内径測定子61を測定作業位置に
設定し(図13(A))、且つ非測定時にはリリーフア
クチュエータ65により内径測定子61を測定圧調整用
引張ばねの弾発力に抗して基板1の内周部から離隔して
内径測定子61を待機位置に設定可能としている(図1
3(B))。また、スイングアーム62は内径測定子6
1が基板1の内周部に圧接したときの内径測定子61の
位置を検出するための差動トランス(外径測定機44の
差動トランス56に相当)を備えている。これにより、
内径測定機45は基板1の内径を以下の如くにより測定
する。
As shown in FIGS. 8 and 10, the inner diameter measuring machine 45 has a pair of inner diameter measuring elements 61 made of diamond. Each inner diameter measuring element 61 is attached to a swing arm 62, and the swing arm 62 is swingably supported on an L-shaped leaf spring type fulcrum (corresponding to the fulcrum 53 of the outer diameter measuring machine 44). Further, the swing arm 62 is a tension spring for measuring pressure adjustment (a tension spring 54 for measuring pressure adjustment of the outer diameter measuring machine 44).
(Corresponding to), the inner diameter measuring element 61 is repulsed in a direction in which the inner diameter measuring element 61 is pressed against the inner peripheral portion of the substrate 1 to set the inner diameter measuring element 61 to the measurement work position (FIG. 13 (A)), and the relief actuator 65 is set when not measuring. The inner diameter probe 61 can be set to the standby position by separating the inner diameter probe 61 from the inner peripheral portion of the substrate 1 against the elastic force of the measurement pressure adjusting tension spring (FIG. 1).
3 (B)). Further, the swing arm 62 is the inner diameter measuring element 6
A differential transformer (corresponding to the differential transformer 56 of the outer diameter measuring machine 44) for detecting the position of the inner diameter measuring element 61 when 1 is pressed against the inner peripheral portion of the substrate 1 is provided. This allows
The inner diameter measuring machine 45 measures the inner diameter of the substrate 1 as follows.

【0035】(1) 内径測定機45の一対の内径測定子6
1を待機位置に設定した状態で、それら一対の内径測定
子61まわりに、前述の標準基板を配置する。その後、
一対の内径測定子61を測定作業位置に設定し、そのと
きの両内径測定子61に対応する差動トランスの出力G
3 、G4 を零設定する。
(1) A pair of inner diameter measuring elements 6 of the inner diameter measuring device 45
In the state where 1 is set to the standby position, the above-mentioned standard substrate is arranged around the pair of inner diameter measuring elements 61. afterwards,
The pair of inner diameter gauges 61 is set to the measurement work position, and the output G of the differential transformer corresponding to both inner diameter gauges 61 at that time
3, G 4 a zero setting.

【0036】(2) 内径測定機45の一対の内径測定子6
1を待機位置に設定した状態で、内径測定機45を基板
対応位置に設定する。その後、一対の内径測定子61を
測定位置に設定し、内径測定子61を基板1の内周部に
圧接した状態で基板1を回転させ、そのときの両内径測
定子61に対応する差動トランスの出力G3 、G4 を基
板1の周方向の多数の測定点で連続的に得て、内径測定
値とする。
(2) A pair of inner diameter measuring elements 6 of the inner diameter measuring machine 45
With 1 set at the standby position, the inner diameter measuring machine 45 is set at the substrate corresponding position. After that, the pair of inner diameter measuring elements 61 is set to the measurement position, the substrate 1 is rotated in a state where the inner diameter measuring element 61 is pressed against the inner peripheral portion of the substrate 1, and the differentials corresponding to both inner diameter measuring elements 61 at that time. The outputs G 3 and G 4 of the transformer are continuously obtained at a large number of measurement points in the circumferential direction of the substrate 1 and used as inner diameter measurement values.

【0037】次に、測定処理装置13は、前述の外径測
定機44が基板1の周方向の多数の測定点について測定
した外径測定値G1 、G2 と、内径測定機45が基板1
の周方向の多数の測定点について測定した内径測定値G
3 、G4 を得て、基板1の内周部及び外周部の平均直
径、最大直径、最小直径、真円度、内周部と外周部の同
芯度等を以下の如くにより算出する。
Next, in the measurement processing device 13, the outer diameter measuring instrument 44 measures the outer diameter measurement values G 1 and G 2 measured at a large number of measuring points in the circumferential direction of the substrate 1, and the inner diameter measuring instrument 45 measures the substrate. 1
Inner diameter measurement value G measured at many measurement points in the circumferential direction of
3 , G 4 is obtained, and the average diameter, the maximum diameter, the minimum diameter, the roundness, the concentricity between the inner peripheral portion and the outer peripheral portion of the substrate 1 are calculated as follows.

【0038】(1) 平均外径(1) Average outer diameter

【数1】 [Equation 1]

【0039】(2) 平均内径(2) Average inner diameter

【数2】 [Equation 2]

【0040】(3) 最大外径 MAX(G1 +G2(3) Maximum outer diameter MAX (G 1 + G 2 )

【0041】(4) 最小外径 MIN(G1 +G2(4) Minimum outer diameter MIN (G 1 + G 2 )

【0042】(5) 最大内径 MAX(G3 +G4(5) Maximum inner diameter MAX (G 3 + G 4 )

【0043】(6) 最小内径 MIN(G3 +G4(6) Minimum inner diameter MIN (G 3 + G 4 )

【0044】(7) 外径真円度 MAX(G1 +G2 )−MIN(G1 +G2(7) Outer Diameter Roundness MAX (G 1 + G 2 ) -MIN (G 1 + G 2 )

【0045】(8) 内径真円度 MAX(G3 +G4 )−MIN(G3 +G4(8) Roundness of inner diameter MAX (G 3 + G 4 ) -MIN (G 3 + G 4 )

【0046】(9) 同芯度(9) Concentricity

【数3】 (Equation 3)

【0047】然るに、制御装置14は、測定処理装置1
3が算出した平均直径、最大直径、最小直径、真円度及
び同芯度を、予め定めてあるそれらの許容値と比較し、
それらの許容範囲を超えて不適切な場合には、基板廃棄
信号を出力する。そして、面取加工機11は、この基板
廃棄信号に基づき、不適切な面取形状の基板1を面取加
工機11の機外へ廃棄させる基板リジェクト装置71を
有する。
Therefore, the controller 14 is the measurement processor 1
The average diameter, the maximum diameter, the minimum diameter, the roundness, and the concentricity calculated by 3 are compared with their predetermined allowable values,
When the allowable range is exceeded, the board discard signal is output. Then, the chamfering machine 11 has a board rejecting device 71 for discarding the board 1 having an inappropriate chamfered shape out of the chamfering machine 11 based on the board discard signal.

【0048】また、制御装置14は、測定処理装置13
が測定した同芯度及び真円度がそれらの許容範囲を超え
て不適切である基板1が、一定の期間に特定枚数排出さ
れたとき、砥石27の寿命とみなしてその交換時期を知
らせる砥石交換時期報知装置72を有する。
Further, the control device 14 includes the measurement processing device 13
When the specific number of substrates 1 whose concentricity and roundness measured by the above are inadequate beyond their permissible range and are discharged in a certain period, it is regarded as the life of the grindstone 27 and a grindstone for notifying the replacement time It has a replacement time notification device 72.

【0049】以下、本実施形態の作用について説明す
る。 面取加工機11にて加工された基板1の内周部及び外
周部の直径を連続的に測定する測定装置12と、この測
定値からの測定結果より内周部及び外周部の平均直径、
最大直径、最小直径及び真円度と、内周部と外周部の同
芯度を算出する測定処理装置13とを有している。従っ
て、基板1の内周部及び外周部の直径、真円度、同芯度
を機内で簡易に全数検査できる。
The operation of this embodiment will be described below. A measuring device 12 that continuously measures the diameters of the inner peripheral portion and the outer peripheral portion of the substrate 1 processed by the chamfering machine 11, and the average diameter of the inner peripheral portion and the outer peripheral portion based on the measurement results from the measured values,
It has a maximum diameter, a minimum diameter, and a roundness, and a measurement processing device 13 for calculating the concentricity of the inner peripheral portion and the outer peripheral portion. Therefore, the diameters, roundness, and concentricity of the inner and outer peripheral portions of the substrate 1 can be easily inspected in the machine.

【0050】測定装置12の測定子51、61がダイ
ヤモンドからなるため、加工された基板1を全数検査す
べく、測定子51、61による測定を繰り返しても、測
定子51、61の耐久性向上によりその摩耗が長期に渡
って進行せず、測定装置12の測定誤差(実際の値と測
定値との差)は長期に渡って無視できる程度に小さいも
のとなる。このため、測定装置12は、長期に渡って正
確な測定値を安定して出力でき、測定の信頼性を向上
し、加工の生産性を向上できる。
Since the measuring elements 51 and 61 of the measuring device 12 are made of diamond, the durability of the measuring elements 51 and 61 is improved even if the measurement by the measuring elements 51 and 61 is repeated in order to inspect all the processed substrates 1. As a result, the wear does not proceed for a long period of time, and the measurement error of the measuring device 12 (difference between the actual value and the measured value) becomes negligibly small over a long period of time. Therefore, the measuring device 12 can stably output accurate measurement values over a long period of time, improve the reliability of measurement, and improve the productivity of processing.

【0051】測定処理装置13が算出した平均直径、
最大直径、最小直径、真円度及び同芯度が不適切な基板
1(面取形状不良基板1)は、面取加工機11の制御に
より機外へ廃棄される。従って、不良基板1が面取加工
後の下工程へ搬送されて無駄な加工を施されることがな
く、生産性向上できる。
The average diameter calculated by the measurement processing device 13,
The substrate 1 (the substrate 1 with a defective chamfered shape) having an inappropriate maximum diameter, minimum diameter, roundness and concentricity is discarded outside the machine under the control of the chamfering machine 11. Therefore, the defective substrate 1 is not conveyed to a lower process after the chamfering process and is not subjected to useless processing, and the productivity can be improved.

【0052】基板1の同芯度及び真円度は砥石27の
切削性に強く影響される。従って、測定処理装置13が
算出した真円度及び同芯度の不良が一定の期間に特定枚
数排出されたことを監視することにより、砥石27の寿
命を判定し、砥石27交換時期を簡易且つ合理的に知る
ことができる。
The concentricity and roundness of the substrate 1 are strongly influenced by the machinability of the grindstone 27. Therefore, the life of the grindstone 27 is determined by monitoring that the specific number of defective roundness and concentricity defects calculated by the measurement processing device 13 are discharged in a certain period, and the grindstone 27 replacement time can be simplified. You can reasonably know.

【0053】基板1がカーボン基板等の脆性非金属材
料からなるとき、砥石27の切削性が基板1の加工寸法
精度に特に強く影響する。従って、非金属材料からなる
基板1に対し上記〜の作用を得ることは、基板1の
加工精度向上、生産性向上に特に有用となる。
When the substrate 1 is made of a brittle non-metallic material such as a carbon substrate, the machinability of the grindstone 27 particularly strongly affects the processing dimensional accuracy of the substrate 1. Therefore, obtaining the above-mentioned actions (1) to (3) for the substrate 1 made of a non-metal material is particularly useful for improving the processing accuracy and productivity of the substrate 1.

【0054】以上、本発明の実施の形態を図面により詳
述したが、本発明の具体的な構成はこの実施の形態に限
られるものではなく、本発明の要旨を逸脱しない範囲の
設計の変更等があっても本発明に含まれる。例えば、本
発明が適用される基板は、カーボン状炭素材基板に限ら
ず、板ガラス、結晶化ガラス、或いはシリコン等の非金
属の脆性材料からなるものであってもよい。
The embodiment of the present invention has been described in detail above with reference to the drawings. However, the specific configuration of the present invention is not limited to this embodiment, and the design can be changed without departing from the gist of the present invention. Etc. are included in the present invention. For example, the substrate to which the present invention is applied is not limited to the carbonaceous carbon material substrate, and may be a plate glass, crystallized glass, or a nonmetallic brittle material such as silicon.

【0055】[0055]

【発明の効果】以上のように本発明によれば、面取加工
機により基板の面取加工を行なうに際し、基板の内周部
及び外周部の直径、真円度、同芯度を機内で簡易に正確
な値を安定して全数検査し、生産性を向上できる。
As described above, according to the present invention, when a substrate is chamfered by a chamfering machine, the diameter, roundness and concentricity of the inner and outer peripheral portions of the substrate can be measured in the machine. You can easily and accurately inspect all products to improve productivity.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は面取加工装置を示すブロック図である。FIG. 1 is a block diagram showing a chamfering apparatus.

【図2】図2は面取加工機の一例を示す平面図である。FIG. 2 is a plan view showing an example of a chamfering machine.

【図3】図3は図1の正面図である。FIG. 3 is a front view of FIG. 1.

【図4】図4は図1の側面図である。FIG. 4 is a side view of FIG. 1.

【図5】図5は砥石による面取加工状態を示す模式図で
ある。
FIG. 5 is a schematic view showing a chamfering processing state with a grindstone.

【図6】図6は基板の面取形状を示す模式である。FIG. 6 is a schematic view showing a chamfered shape of a substrate.

【図7】図7は測定装置を示す模式図である。FIG. 7 is a schematic diagram showing a measuring device.

【図8】図8は図7のVIII-VIII 線に沿う矢視図であ
る。
FIG. 8 is a view taken along the line VIII-VIII in FIG.

【図9】図9は外径測定機を示す模式図である。FIG. 9 is a schematic view showing an outer diameter measuring machine.

【図10】図10は内径測定機を示す模式図である。FIG. 10 is a schematic view showing an inner diameter measuring machine.

【図11】図11は測定機の内部構造を示す模式図であ
る。
FIG. 11 is a schematic diagram showing an internal structure of the measuring machine.

【図12】図12は外径測定機の測定子の作動を示す模
式図である。
FIG. 12 is a schematic view showing the operation of a probe of an outer diameter measuring machine.

【図13】図13は内径測定機の測定子の作動を示す模
式図である。
FIG. 13 is a schematic diagram showing the operation of a probe of an inner diameter measuring machine.

【図14】図14は従来技術を示す模式図である。FIG. 14 is a schematic diagram showing a conventional technique.

【符号の説明】[Explanation of symbols]

1 基板 3 外径端面 3A 面取部 5 内径端面 5A 面取部 10 面取加工装置 11 面取加工機 12 測定装置 13 測定処理装置 14 制御装置 27 砥石 51、61 測定子 71 基板リジェクト装置 72 砥石交換時期報知装置 1 substrate 3 outer diameter end surface 3A chamfered portion 5 inner diameter end surface 5A chamfered portion 10 chamfering processing device 11 chamfering processing machine 12 measuring device 13 measurement processing device 14 control device 27 grindstone 51, 61 probe 71 substrate reject device 72 grindstone Replacement time notification device

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 ドーナツ状基板の端面に面取加工する基
板の面取加工装置において、 砥石を備え、この砥石にて上記基板の端面に面取加工す
る面取加工機と、 上記面取加工機にて加工された基板の内周部及び外周部
の直径を連続的に測定する測定装置と、 上記測定装置からの測定結果より内周部及び外周部の平
均直径、最大直径、最小直径及び真円度と、内周部と外
周部の同芯度を算出する測定処理装置とを有し、 上記測定装置における基板の内周部もしくは外周部に接
する測定子がダイヤモンドからなることを特徴とする基
板の面取加工装置。
1. A substrate chamfering device for chamfering an end face of a donut-shaped substrate, comprising a grindstone, and a chamfering machine for chamfering the end face of the substrate with the grindstone; Measuring device for continuously measuring the diameter of the inner peripheral portion and the outer peripheral portion of the substrate processed by a machine, the average diameter of the inner peripheral portion and the outer peripheral portion from the measurement results from the measuring device, the maximum diameter, the minimum diameter and Circularity, having a measurement processing device for calculating the concentricity of the inner peripheral portion and the outer peripheral portion, wherein the probe contacting the inner peripheral portion or the outer peripheral portion of the substrate in the measuring device is made of diamond, Chamfering device for substrate.
【請求項2】 前記測定処理装置が算出した平均直径、
最大直径、最小直径、真円度及び同芯度が適切であるか
否かを判別し、不適切な場合には廃棄信号を出力し、 前記面取加工機が該廃棄信号に基づき不適切な面取形状
の基板を面取加工機の機外へ廃棄させる手段を有する請
求項1記載の基板の面取加工装置。
2. An average diameter calculated by the measurement processing device,
It determines whether the maximum diameter, the minimum diameter, the circularity and the concentricity are appropriate, and outputs a discard signal when the diameter is inappropriate, and the chamfering machine determines whether the diameter is inappropriate based on the discard signal. 2. The chamfering apparatus for a substrate according to claim 1, further comprising means for disposing the chamfered substrate outside the chamfering machine.
【請求項3】 前記測定処理装置が算出した同芯度及び
真円度の測定結果が不適切である加工基板が一定の期間
に特定枚数排出されたとき、砥石の寿命とみなして砥石
の交換時期を知らせる手段を有する請求項1又は2に記
載の基板の面取加工装置。
3. When a specific number of processed substrates having improper concentricity and roundness measurement results calculated by the measurement processing device are discharged in a certain period, it is regarded as the life of the grindstone and the grindstone is replaced. The chamfering apparatus for a substrate according to claim 1 or 2, further comprising means for notifying a time.
【請求項4】 前記基板が非金属材料にて構成されたも
のである請求項1〜3のいずれかに記載の基板の面取加
工装置。
4. The chamfering apparatus for a substrate according to claim 1, wherein the substrate is made of a non-metallic material.
JP35223195A 1995-12-28 1995-12-28 Substrate chamfering device Withdrawn JPH09183050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35223195A JPH09183050A (en) 1995-12-28 1995-12-28 Substrate chamfering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35223195A JPH09183050A (en) 1995-12-28 1995-12-28 Substrate chamfering device

Publications (1)

Publication Number Publication Date
JPH09183050A true JPH09183050A (en) 1997-07-15

Family

ID=18422661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35223195A Withdrawn JPH09183050A (en) 1995-12-28 1995-12-28 Substrate chamfering device

Country Status (1)

Country Link
JP (1) JPH09183050A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002001655A (en) * 2000-06-23 2002-01-08 Nippei Toyama Corp Device and method for grinding workpiece
JP2008171532A (en) * 2007-01-15 2008-07-24 Hoya Corp Inner diameter measuring device of disk-shaped substrate, inner diameter measuring method, manufacturing method of disk-shaped substrate and manufacturing method of magnetic disk

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002001655A (en) * 2000-06-23 2002-01-08 Nippei Toyama Corp Device and method for grinding workpiece
JP2008171532A (en) * 2007-01-15 2008-07-24 Hoya Corp Inner diameter measuring device of disk-shaped substrate, inner diameter measuring method, manufacturing method of disk-shaped substrate and manufacturing method of magnetic disk

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