JPH0917776A - Manufacture of semiconductor device and semiconductor manufacturing apparatus - Google Patents

Abstract

PURPOSE: To obtain a semiconductor manufacturing apparatus by which an organic substance remaining on the surface of a semiconductor substrate is removed surely by a method wherein the semiconductor substrate is cleaned by O3 gas at a high temperature and a film unstable with reference to the organic substance is formed after its cleaning operation is finished. CONSTITUTION: A semiconductor substrate 24 is preheated by a heater inside a semiconductor manufacturing apparatus body 21, and O3 gas 29 is introduced into the semiconductor manufacturing apparatus body 21. A remaining organic substance on the semiconductor substrate 24 reacts with the O3 gas 29, and it is discharged from the semiconductor manufacturing apparatus body 21 as a volatile product such as CO or CO2 . Then, an O3 TEOS NSG film is formed on a wiring pattern on the semiconductor substrate 24 clear of the remaining organic substance.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the inside of the same semiconductor manufacturing apparatus before forming a base film when forming a film which is easily affected by the film thickness formation at the time of film formation by an adsorbed organic substance on a semiconductor substrate. The present invention relates to a method for manufacturing a semiconductor device and a semiconductor manufacturing apparatus, in which adsorbed organic substances are removed by performing O3 cleaning at room temperature or high temperature to stabilize the film formation which is susceptible to the surface condition of the semiconductor substrate.

[0002]

2. Description of the Related Art As an interlayer insulating film of VLSI (Very Large Scale Integrated Circuit), O3 gas is used as an oxidizer and T is used as a liquid source.
Recently, an interlayer insulating film (hereinafter referred to as an O3 / TEOS NSG film) in which NSG is formed by a CVD technique using EOS has been used. The O3 / TEOS NSG film is characterized in that it is formed into a flow-like shape after the formation of the lower wiring pattern on the semiconductor substrate. here,
Taking a MOS transistor as an example, O3 / TEOS NSG
The process leading to film formation will be outlined. FIG. 7 is a sectional view showing the basic structure of a MOS transistor.

In FIG. 7, n + diffusion layers 2 and 3 serving as a source and a drain are formed on a P-type silicon substrate 1 and filled oxide films 4 and 5 of SiO 2 are formed, and the oxide film 7 is entirely formed. The gate oxide film 7 is formed by patterning the oxide film by applying a photoresist and photolithography technique and etching, and after forming the polysilicon film, the gate oxide film 7 is patterned to form a polysilicon gate 8 on the gate oxide film 7. Then, a BPSG8 film is formed on the upper surface, contacts are made to the regions to be the source and drain, and Al is vapor-deposited thereon to form the first wiring pattern 9 of Al for connecting to the gate, source and drain. A photoresist (not shown) is applied and formed by etching. Thus, a semiconductor substrate having a MOS transistor is obtained.

2 on the wiring pattern 9 of the first layer of Al
In order to form the wiring pattern of the first layer, an interlayer insulating film for insulating the wiring pattern 9 of the first layer and the wiring pattern of the second layer is formed. At this time, the plasma-TEOS 10 ( (Hereinafter referred to as P-TEOS) as an interlayer insulating film, and the above-mentioned O3 / TEOS NSG film 1 is used.
Form one. However, O3 / TEOS NSG film 1
No. 1 is characterized in that the film thickness of the O3 / TEOS NSG film 11 changes depending on moisture, organic solvent, and adsorbed substances on the surface of the base film. In particular, when organic matter is present, its characteristics become remarkable. In other words, O3 / TEOS NS
It is sensitive to the state of the surface of the P-TEOS 10 which is the base film of the G film 11. In this case, the organic solvent is Al 1
The organic substance by the organic cleaning liquid used for cleaning after performing the etching process of the wiring pattern 9 of the layer corresponds to this.

[0005]

In the state where such an organic substance remains, P is formed through the first wiring pattern 9 of Al.
-When TEOS10 is formed, P-TEOS1 of the base film is formed.
0 is contaminated with organic substances and a film is formed. As a result, the O3 / TEOS NSG film 11 becomes P-TEOS10.
As shown in FIG. 8, the thickness of the O3 / TEOS NSG film becomes thin as a result of the change in the film thickness X as shown in FIG. 1
1 is deformed, and the Al first wiring pattern 9
O3 / TEOS NSG film 11
Changes the film thickness.

FIG. 9 shows the space width of the Al wiring pattern 9 and the thickness of the O3 / TEOSNSG film 11 on the vertical axis. The solid line A in FIG. 9 is P-T
O3 / T when EOS10 is not polluted by organic matter
While showing the characteristics of the EOS NSG film 11,
The broken line B shows the characteristics of the O3 / TEOS NSG film 11 when the P-TEOS 10 is contaminated with organic substances. As is clear from a comparison between the two characteristics A and B, the characteristic A having no organic pollution is more likely to be the O3 / TEOS NSG film 11 with respect to the space width of the Al first wiring pattern 9.
It shows that the change of the film thickness of is gradual. In other words, the P-T of the underlying film of the O3 / TEOS NSG film 11
The EOS 10 is O3 / TEOS NS with respect to the space width of the Al first wiring pattern 9 due to the contamination of organic matter.
It can be seen that the film thickness of the G film 11 varies greatly. As described above, the influence of the organic contaminants on the formation of the O3 / TEOS NSG film 11 is the same when the residual organic substances are present before the formation of the O3 / TEOS NSG film 11.

On the other hand, SiN (hereinafter referred to as LP) formed by LP-CVD used as a capacitive insulating film of DRAM.
-CVD SiN) film thickness, and thus the capacitance value, is influenced by the presence or absence of a natural oxide film during the film formation. FIG.
Is a characteristic diagram showing the deposition time of LP-CVD SiN on the horizontal axis and the film thickness of LP-CVD SiN on the vertical axis, and the solid line C shows the characteristics when there is no natural oxide film. The dotted line D shows the characteristics when there is a natural oxide film.

As shown in FIG. 10, when the natural oxide film is present, the latent period T (incu is greater than that when the natural oxide film is not formed when the LP-CVD SiN film is formed.
bation time) will occur. This incubation period T changes depending on the amount of organic matter. Incubation period T
Changes, the vapor deposition time of LP-CVD Si N changes, and therefore the film thickness of LP-CVD Si N varies, which eventually causes variation in capacitance value. Particularly, the capacitance insulating film is usually 50 to 10
It is a very thin film of about 0, and the influence of the natural oxide film is extremely large, and it is difficult to control the film thickness of the capacitive insulating film depending on the existing amount of the natural oxide film.

In order to prevent such variations in capacitance value, it is also proposed to form a two-layer structure such as RTN / LP.SiN for forming the underlying film when forming the LP-CVD SiN. Has been done. However, in the case of this two-layer structure, if the process steps from the RTN film formation to the LP.SiN film formation are left unattended, the RTN
An organic substance is adsorbed on the surface of the film, and the latent period T similar to that when a natural oxide film is formed is generated by this organic substance, and eventually the film formation of LP-CVD SiN varies.

The present invention has been devised in view of the above circumstances, and it is possible to surely remove the organic substances remaining on the surface of the semiconductor substrate, and the presence of the organic substances in the underlayer prevents the organic substances from adhering to the organic substances. It is an object of the present invention to provide a method for manufacturing a semiconductor device, which can prevent variations in the formation of stable films in advance, and can improve the stability of the processing of films that are unstable with respect to organic substances.

Further, according to the present invention, even when the underlayer film is contaminated with organic matter, organic matter contamination can be removed by O3 gas cleaning, and the presence of organic matter in the underlayer film makes it unstable to organic matter. An object of the present invention is to provide a semiconductor manufacturing apparatus that enables stable film formation even when forming a film.

[0012]

In order to achieve the above object, the present invention is used for forming a lower layer wiring pattern on a semiconductor substrate and for forming the lower layer wiring pattern after the formation of the lower layer wiring pattern. It comprises a step of cleaning the semiconductor substrate with a high temperature O3 gas in the same semiconductor manufacturing apparatus as the semiconductor manufacturing apparatus, and a step of forming a film unstable to an organic substance after the cleaning is completed. .

Further, according to the present invention, in a semiconductor manufacturing apparatus which performs plasma CVD or LP-CVD and has an O3 gas introducing function or a semiconductor manufacturing apparatus having a multi-chamber, an O3 cleaning chamber is provided. To do.

[0014]

According to the present invention, the semiconductor manufacturing apparatus in which the lower layer wiring pattern is formed on the semiconductor substrate is used as it is, and
3 Gas is introduced to clean the semiconductor substrate and react with residual organic substances on the surface of the semiconductor substrate to remove CO or CO 2
Is removed as a volatile product, and after the residual organic matter is removed, a film unstable to the organic matter is formed as an interlayer insulating film through the base film without being affected by the residual organic matter. As a result, it is possible to surely remove the organic substances remaining on the surface of the semiconductor substrate, and to prevent variations in film formation that are unstable with respect to the organic substances due to the presence of the organic substances in the base film. On the other hand, the stability of the treatment of the unstable film can be improved.

Further, according to the present invention, by introducing the O3 gas into the O3 cleaning chamber provided in the semiconductor manufacturing apparatus having the O3 gas introducing function or the semiconductor manufacturing apparatus having the multi-chamber, the O3 cleaning Residual organic substances adhering to the surface of the semiconductor substrate housed in the chamber react with O3 gas to enable removal from the O3 gas cleaning chamber, and formation of a film unstable to organic substances subsequently formed on the semiconductor substrate. Sometimes the film is formed at a stable film formation rate. Therefore, even when the underlying film is contaminated with organic matter, the organic matter contamination can be removed by O3 cleaning, and the film thickness is stable even when a film unstable to the organic matter contamination of the underlying film is formed. It is possible to form a film.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a method of manufacturing a semiconductor device and a semiconductor manufacturing apparatus of the present invention will be described below with reference to the drawings. First, an embodiment of a semiconductor manufacturing apparatus applied to the semiconductor device manufacturing method of the present invention will be described. FIG. 1 is a configuration explanatory view showing a schematic configuration of a semiconductor manufacturing apparatus of the present invention. Reference numeral 21 in FIG. 1 denotes a semiconductor manufacturing apparatus body, and a heater is housed in the semiconductor manufacturing apparatus body 21. The heater is sealed and shielded by a shield 22. A support 23 is provided on the shield 22,
The semiconductor substrate 24 to be processed is placed on the support table 23. These shield 22, support 23,
The semiconductor substrate 24 and the heater are both rotatable at a predetermined speed in the semiconductor manufacturing apparatus main body 21 by a rotating mechanism mainly composed of a motor (not shown), and the shield 22 is a lower electrode.

An upper electrode 25 faces the upper part of the semiconductor manufacturing apparatus main body 21 so as to face the lower electrode. A high frequency power source 26 that generates a high frequency voltage of 13.56 MHz is applied to the upper electrode 25. Further, O2 gas 27 as a reaction gas is introduced into the semiconductor manufacturing apparatus main body 21 through the upper electrode 25, and TEOS 28 can also be introduced. The configuration described above is a general schematic configuration of the semiconductor manufacturing apparatus. In the embodiment of FIG. 1, this configuration is further provided with a function of supplying the O3 gas 29 into the semiconductor manufacturing apparatus main body 21. The point is characteristic.

Next, an embodiment of the method for manufacturing a semiconductor device of the present invention by the semiconductor manufacturing device of the present invention configured as described above will be described. FIG. 2 shows a process flow showing a processing procedure of an embodiment of the method for manufacturing the semiconductor device. In FIG. 2, first, before executing the processing of step S1, the semiconductor manufacturing shown in FIG. The semiconductor substrate 24 is placed on the support table 23 in the device body 21. In this embodiment, the semiconductor substrate 24 is formed by oxidizing a source / drain n + diffusion layer, a filled oxide film, and a gate oxide film on a silicon substrate, as shown in FIGS. Before forming a contact hole in the polysilicon gate and BPSG and evaporating Al to form the first wiring layer of Al, and before patterning the first wiring layer of Al by etching. It is a semiconductor substrate of a stage.

In this way, the semiconductor substrate 24 at the stage before the formation of the Al first wiring pattern is left as it is on the support base 23 in the semiconductor manufacturing apparatus body 21, that is, the first Al layer is formed. In the manufacturing process after the wiring pattern is formed, the semiconductor manufacturing apparatus main body 21 is continuously used to perform the manufacturing process after step S1. Step S in FIG.
1. Applying a photoresist on the upper surface of Al vapor-deposited on the semiconductor substrate 24 in 1 and patterning the photoresist by a photolithography technique, and etching Al to form a first wiring pattern of Al. To do.

Next, in step S2, the photoresist on the Al first wiring pattern is removed using an organic solvent. If organic matter remains on the Al first wiring pattern or on the BPSG film due to the use of this organic solvent, as described above, it becomes a base film of the interlayer insulating film.
TEOS is formed as it is in a state of being contaminated with organic substances. Therefore, in this embodiment, the semiconductor substrate 24 is continuously placed on the support base 23 in the semiconductor manufacturing apparatus main body 21 and before the P-TEOS film forming process, the step S3, which is a feature of this embodiment, is performed first. Then, the O3 gas 29 is introduced into the main body 21 of the semiconductor manufacturing apparatus, and the process of cleaning the remaining organic substances on the semiconductor substrate 24 by the O3 gas 29 is started. FIG. 3 shows a detailed process flow after the cleaning process using the O3 gas 29 in step S3.

In step S3a in FIG. 3, the semiconductor substrate 24 is continuously placed on the support base 23 in the semiconductor manufacturing apparatus body 21, and then step S3.
In step b, the semiconductor substrate 24 is preheated by the heater in the main body 21 of the semiconductor manufacturing apparatus, and the temperature of the semiconductor substrate 24 becomes O3 gas 2
The cleaning process by 9 can be performed stably.
When the temperature of the semiconductor substrate 24 reaches a predetermined temperature, the process proceeds to step S3c, and the O3 gas 29 is introduced into the semiconductor manufacturing apparatus main body 21. By introducing the O3 gas 29 into the semiconductor manufacturing apparatus main body 21, the residual organic matter on the semiconductor substrate 24 reacts with the O3 gas 29 to produce CO or CO2 as a volatile product, and the semiconductor manufacturing apparatus main body 21 is discharged. The organic substances remaining on the semiconductor substrate 24 can be removed by discharging the organic substance from the semiconductor substrate 24.

Next, the process proceeds to step S4 of the process flow of FIG. 2 and the semiconductor substrate 24 from which the residual organic substances have been removed
O3 / TEOS on top of Al first layer wiring pattern
The process proceeds to a film forming process of P-TEOS which is a base film of the NSG film, TEOS 28 is introduced into the semiconductor manufacturing apparatus main body 21, and a high frequency voltage of 13.56 MHz is applied from the high frequency power source 26 to the upper electrode 25, and the semiconductor Plasma is generated in the manufacturing apparatus main body 21 to form a film of P-TEOS. The P-TEOS film formation can be performed in the same semiconductor manufacturing apparatus main body 21 as the O3 cleaning.
The film formation of the OS is avoided from the contamination of organic substances, and the film formation process of the O3 / P-TEOS SNG film described later can be stabilized.

After the P-TEOS film is formed, the process proceeds to step S5, in which TEOS 28, O3 is placed in the semiconductor manufacturing apparatus main body 21.
Gas 29 is introduced and the CVD method is used to produce O3 / P-TEO.
The SSNG film is formed. Thus, the film formation of P-TEOS in step S4 and the O3 / P-T in step S5 are performed.
The process of forming the EOS SNG film is displayed all at once.
This is step S6 in the process flow of FIG. 3, and after the processing of this step S6 is completed, the inside of the semiconductor manufacturing apparatus main body 21 is evacuated in step S7, and the semiconductor manufacturing apparatus main body 2
In step S8, the semiconductor substrate 24 is taken out from the support table 23 in the apparatus 1 and a series of processing steps is completed.

As described above, in this embodiment, the O 3 gas 29 is introduced into the conventional plasma CVD to form the P-TE of the base film.
The residual organic matter on the semiconductor substrate 23 is cleaned before the OS film is formed.
The / P-TEOS SNG film can be stably formed as the interlayer insulating film. In addition, in the above-described embodiment of the semiconductor manufacturing apparatus, the case of the parallel plate is illustrated, but the method of supplying the high frequency power is not particularly limited.

Next, a second embodiment of the semiconductor device manufacturing method of the present invention will be described. In the first embodiment,
Cleaning with O3 gas is performed by using P-TE which is the base film.
The case of performing before the OS film formation has been described.
In this embodiment, O3 / P-TEOS which becomes an interlayer insulating film is used.
Cleaning with O3 gas is performed before the step of forming the SNG film. That is, if the P-TEOS film is left for a predetermined time after being formed, organic substances may be adsorbed on the surface of the P-TEOS film. Therefore, O3 / P-TEO
By introducing O3 gas into the O3 / P-TEOS CVD apparatus such as the semiconductor manufacturing apparatus main body 21 shown in FIG. 1 before the S SNG film forming step, the organic matter adsorbed on the surface of P-TEOS is Similar to the case of the first embodiment,
The adsorbed organic substances are removed as volatile products such as CO and CO2 by O3 gas. As a result, the same effect as that of the first embodiment can be obtained.

Next, a second embodiment of the semiconductor manufacturing apparatus of the present invention will be described. FIG. 4 is a structural explanatory view showing a schematic structure of a second embodiment of this semiconductor manufacturing apparatus. As shown in FIG. 4, a vapor deposition chamber 32 is connected to the upper portion of a load / lock chamber 31 capable of constantly maintaining a vacuum state and capable of inserting / removing a semiconductor substrate, and O3 cleaning is performed. -The chamber 33 is connected. The deposition chamber 32 is made of polysilicon or A for forming a predetermined film on a predetermined portion of a semiconductor substrate.
The chamber is formed by vapor-depositing a wiring pattern such as l, and the O3 cleaning chamber 33 is for reacting and removing organic substances adsorbed on a predetermined portion of the semiconductor substrate by O3 gas.

FIG. 5 shows the O3 cleaning chamber 33.
It is a configuration explanatory view showing a schematic configuration of. In FIG.
A heater 34 is provided in the O3 cleaning chamber 33, and a semiconductor substrate 35 is mounted on the heater 34 via a support base (not shown). Further, the upper electrode 25 in the O3 cleaning chamber 33 is provided with an O3 gas introducing port 36 for organic substance cleaning, facing the heater 34. O3
O3 gas is introduced into the O3 cleaning chamber 33 through the gas inlet 36.

Next, according to a second embodiment of the semiconductor manufacturing apparatus of the present invention shown in FIGS. 4 and 5, a semiconductor device of the present invention for forming a SiN film for forming a storage capacitor in a DRAM is formed. FIG. 6 for the third embodiment of the manufacturing method of FIG.
The process flow will be explained. First, the lower electrode of the DRAM capacitor is formed in the deposition chamber 32 in step S11 of FIG.
N (rapid thermal nitridation) processing is performed. That is, in the lamp annealer, while heating the semiconductor substrate on which the lower electrode is formed by the lamp, the ammonia nitride is flown to form the silicon nitride by heat.

This silicon nitride is LP-Si
Although it serves as a base film of the N film, this silicon nitride prevents LP-SiN described later from being affected by the natural oxide film. Further, if the LP-SiN film is formed directly on the silicon nitride, as described above, the LP-SiN film is formed by the organic substances adsorbed on the silicon nitride at the time of forming the LP-SiN film. N
The film thickness is affected. Therefore, in the third embodiment, after the RTN process in step S12, step S1
Then, the process proceeds to 3 and the O3 cleaning process is performed. In this step S13, the semiconductor substrate on which the silicon nitride is formed by the RTN process is transferred from the vapor deposition chamber 32 through the load / lock chamber 31 to the atmosphere without the semiconductor substrate being exposed to O3 cleaning / cleaning. Transfer to chamber 33.

In the O3 cleaning chamber 33,
The semiconductor substrate 35 is placed on a support table provided on the heater 34 and preheated by the heater 34 until the semiconductor substrate 35 reaches a predetermined temperature. In this state, O3 gas is introduced from the O3 gas inlet 36. The organic substance adsorbed on the semiconductor substrate 35 is allowed to react with O3 gas in the O3 cleaning chamber 33 to react with the organic substance in the same manner as in the first and second embodiments of the semiconductor device manufacturing method. Are removed from the semiconductor substrate. After the O3 cleaning process in step S13 is completed, the semiconductor substrate 35 is O3 cleaned in step S14.
From the cleaning chamber 33 to the load lock chamber 3
Without exposing the semiconductor substrate 35 to the atmosphere via
It is transferred into the vapor deposition chamber 32. In the vapor deposition chamber 32, the LP-SiN film is formed to form the dielectric portion of the DRAM capacitor.

Even in the case of the third embodiment of the method of manufacturing a semiconductor device, O3 cleaning is performed before forming the LP-SiN film to prevent contamination by organic substances adsorbed on silicon nitride. Since the LP-SiN film is formed, the LP-SiN film can be stably formed in the same manner as in the first and second embodiments of the semiconductor device manufacturing method. It is possible to expand the process margin.

In the embodiment shown in FIG. 4, the vapor deposition chamber 3
Although an example of continuous processing by a so-called multi-chamber having 2 and O3 cleaning chamber 33 has been exemplified, O3 gas is introduced into the LP-CVD chamber and the process flow as shown in FIG. Even if the O3 cleaning is performed in the same chamber by various processing procedures, the same effect can be obtained. LP- in this case
The CVD chamber may be a single wafer type or a batch type.
The temperature during the O3 cleaning process in each of the above embodiments may be either room temperature or high temperature, but the higher the temperature, the higher the cleaning effect.

Further, in each of the above embodiments, O3 / TEO
Although the embodiment in which the O3 cleaning treatment is performed before the formation of SNSG, LP-CVD SiN has been described, the present invention is not limited to this, and in the process of becoming unstable due to the organic substance of the semiconductor substrate. Needless to say, it is effective.

[0034]

As is apparent from the above description, according to the present invention, after the formation of the lower wiring pattern, the high temperature O3 gas is generated in the same semiconductor manufacturing apparatus used for forming the lower wiring pattern. As a result, a film that is unstable with respect to organic substances is formed after the cleaning of the semiconductor substrate is completed.Therefore, it is possible to reliably remove the organic substances remaining on the surface of the semiconductor substrate. In contrast, it is possible to prevent variations in the formation of an unstable film, and improve the stability of the processing of the film that is unstable with respect to this organic substance.

Further, according to the present invention, since the semiconductor manufacturing apparatus is provided with the O3 cleaning chamber having the O3 gas introduction function, even when the base film is contaminated with the organic matter, the organic matter is contaminated by the O3 cleaning. Can be removed, and even when a film unstable to an organic substance due to the presence of the organic substance in the base film is formed, the film can be formed with a stable film thickness.

[Brief description of the drawings]

FIG. 1 is a structural explanatory view showing a schematic structure of a first embodiment of a semiconductor manufacturing apparatus of the present invention.

FIG. 2 is a process flow chart for explaining the first embodiment of the method for manufacturing a semiconductor device of the present invention.

FIG. 3 is a process flow chart for explaining a detailed processing procedure of the process flow chart of FIG.

FIG. 4 is a structural explanatory view showing a schematic structure of a second embodiment of the semiconductor manufacturing apparatus of the present invention.

5 is a configuration explanatory view showing a schematic configuration of an O3 cleaning chamber in the semiconductor manufacturing apparatus of FIG.

FIG. 6 is a process flow chart for explaining a third embodiment of the method for manufacturing a semiconductor device of the present invention.

FIG. 7 is a sectional view showing the structure of a conventional semiconductor device having an O 3 / TEOS NSG film formed thereon.

FIG. 8 shows that when the film thickness fluctuates under the influence of organic matter,
It is sectional drawing which shows the structure of the conventional semiconductor device which formed the 3 / TEOS NSG film.

FIG. 9 is a diagram illustrating a conventional semiconductor device having an O3 / TEOS NSG film formed thereon, wherein the O3 / TEOS NSG film is O3 / TEOS N with respect to a space of an Al lower wiring pattern.
FIG. 6 is a characteristic diagram showing a state in which the film thickness of the SG film varies depending on the presence or absence of an organic substance during film formation.

FIG. 10 is a LP-CV for a capacitive insulating film of a conventional DRAM.
LPS-CVD depending on the presence or absence of a native oxide film
It is a characteristic view for explaining a state in which the film thickness of Si N is affected.

[Explanation of symbols]

 21 Semiconductor Manufacturing Equipment Main Body 22,34 Heater 23 Support Stand 24,35 Semiconductor Substrate 25 Upper Electrode 26 High Frequency Power Supply 27 O2 Gas 28 TEOS 29 O3 Gas 31 Load Lock Chamber 32 Deposition Chamber 33 O3 Cleaning Chamber 36 O3 Gas Inlet Port

Claims (5)

[Claims] 1. A step of forming a lower layer wiring pattern on a semiconductor substrate, and a step of forming high temperature O3 gas in the same semiconductor manufacturing apparatus as the semiconductor manufacturing apparatus used for forming the lower layer wiring pattern after the formation of the lower layer wiring pattern. A method of manufacturing a semiconductor device, comprising: a step of cleaning the semiconductor substrate; and a step of forming a film unstable to an organic substance after the cleaning is completed. 2. The film which is unstable to the organic matter is formed of the O 2
2. The method for manufacturing a semiconductor device according to claim 1, wherein the O3 / TEOS NSG film is formed on the lower wiring pattern as an interlayer insulating film via a base film after cleaning with 3 gas is completed. 3. The step of performing cleaning with O 3 gas is the same semiconductor manufacturing apparatus used for manufacturing the semiconductor substrate before forming a film that becomes unstable due to organic substances adsorbed on the surface of the semiconductor substrate. The method for manufacturing a semiconductor device according to claim 1, wherein the method is performed in the device. 4. The step of cleaning with O 3 gas is carried out to remove organic substances adsorbed on the surface of the semiconductor substrate before forming a film susceptible to the natural oxide film on the semiconductor substrate. The method of manufacturing a semiconductor device according to claim 1. 5. A semiconductor manufacturing apparatus having an O3 gas introduction function or a semiconductor manufacturing apparatus having a multi-chamber, which is plasma CVD or LP-CVD,
3 A semiconductor manufacturing apparatus having a cleaning chamber.