JPH09161970A - Dot matrix type organic LED element - Google Patents
Dot matrix type organic LED elementInfo
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- JPH09161970A JPH09161970A JP34502895A JP34502895A JPH09161970A JP H09161970 A JPH09161970 A JP H09161970A JP 34502895 A JP34502895 A JP 34502895A JP 34502895 A JP34502895 A JP 34502895A JP H09161970 A JPH09161970 A JP H09161970A
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- Prior art keywords
- organic layer
- thickness
- film thickness
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- anode electrode
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Abstract
(57)【要約】
【課題】 従来のドットマトリクス型有機LED素子に
おいては、透明基板上に陽極電極を平行に敷設し、発光
性有機層の膜厚よりも大きい段差を生じるものとなり、
発光性有機層の途切れにより短絡事故を生じる問題点が
ある。
【解決手段】 本発明により、陽極電極3の夫々の間
と、この該陽極電極3の長手方向外側の端部とには、膜
厚t3を[(陽極電極3の膜厚t1−絶縁膜6の膜厚t
3)の絶対値]<(発光性有機層4の膜厚t2)とした
絶縁膜6が設けられているドットマトリクス型有機LE
D素子1としたことで、発光性有機層4の敷設面に生じ
ている透明基板2と陽極電極3との、発光性有機層4の
膜厚を越える段差を、絶縁膜6により発光性有機層4の
膜厚の範囲内と緩和し、発光性有機層4に膜面の途切れ
を生じるのを防止して課題を解決する。
(57) Abstract: In a conventional dot matrix type organic LED element, an anode electrode is laid in parallel on a transparent substrate, and a step larger than the film thickness of the light emitting organic layer is generated.
There is a problem that a short circuit accident occurs due to a break in the light emitting organic layer. According to the present invention, the film thickness t3 is [(thickness t1 of the anode electrode 3−insulating film 6 between the anode electrodes 3 and between the anode electrodes 3 and the end portion on the outer side in the longitudinal direction of the anode electrode 3). Film thickness t
3) absolute value] <(thickness t2 of light-emitting organic layer 4), the dot-matrix organic LE provided with the insulating film 6
Since the D element 1 is used, the step of the transparent substrate 2 and the anode electrode 3 generated on the laying surface of the luminescent organic layer 4 that exceeds the film thickness of the luminescent organic layer 4 is caused by the insulating film 6. The problem is solved by relaxing within the range of the film thickness of the layer 4 to prevent the film surface of the light emitting organic layer 4 from being interrupted.
Description
【0001】[0001]
【発明の属する技術分野】本発明は注入型エレクトロル
ミネセンス(EL)とも称され、有機薄膜状としたEL
物質に電子、正孔を注入し、再結合させることで発光を
行う有機LED素子に関するものであり、詳細には表示
機能を持たせるためにドットマトリクス状の駆動が行え
る電極配置とした有機LED素子に係るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is also called injection electroluminescence (EL) and is an organic thin film EL.
The present invention relates to an organic LED element that emits light by injecting electrons and holes into a substance and recombining them. Specifically, the organic LED element has an electrode arrangement capable of driving in a dot matrix form to have a display function. It is related to.
【0002】[0002]
【従来の技術】従来のこの種のドットマトリクス型有機
LED素子90の構成の例を示すものが図4および図5
であり、ガラス或いは樹脂など透明部材で形成された透
明基板91上には、ホトリソ法或いはスクリーン印刷法
などにより、ITOなど透明導電性部材による陽極電極
92の複数が平行に形成されている。2. Description of the Related Art FIGS. 4 and 5 show examples of the structure of a conventional dot matrix type organic LED element 90 of this type.
On a transparent substrate 91 formed of a transparent member such as glass or resin, a plurality of anode electrodes 92 made of a transparent conductive member such as ITO are formed in parallel by a photolithography method or a screen printing method.
【0003】そして、前記透明基板91の陽極電極92
が敷設された側の面には、スクリーン印刷法などにより
発光性有機層93が成膜され、更に、発光性有機層93
の上面には仕事関数の小さな金属、例えばMg:Agの
混合物による陰極電極94が、前記陽極電極92とは直
交する方向に複数が平行に敷設されるものとされてい
る。The anode electrode 92 of the transparent substrate 91
A luminescent organic layer 93 is formed by a screen printing method or the like on the surface on which the luminescent organic layer 93 is laid.
A plurality of cathode electrodes 94 made of a metal having a small work function, for example, a mixture of Mg: Ag, are laid on the upper surface of the above in parallel with each other in a direction orthogonal to the anode electrode 92.
【0004】ここで、前記発光性有機層93は必ずしも
単層ではなく、夫々が有機材料で形成されたホール注入
層、ホール輸送層、発光層、電子注入層の各層から必要
に応じて適宜な機能の層が選択され、少なくとも発光層
を含む層として構成されているものである。Here, the light-emitting organic layer 93 is not necessarily a single layer, and may be any of a hole-injecting layer, a hole-transporting layer, a light-emitting layer, and an electron-injecting layer, each of which is made of an organic material. A functional layer is selected and configured as a layer including at least a light emitting layer.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、前記し
た従来の構成のドットマトリクス型有機LED素子90
においては、前記陽極電極92があまりに高抵抗である
と、この陽極電極92内での電圧低下が著しく、全体と
しての効率低下を生じるものとなるので、一般的には2
000Åの膜厚として形成されるのが通常である。However, the dot-matrix organic LED element 90 having the above-described conventional structure is provided.
In the above, if the anode electrode 92 has an excessively high resistance, the voltage drop in the anode electrode 92 becomes remarkable and the efficiency as a whole is lowered.
It is usually formed as a film thickness of 000Å.
【0006】これに対して、発光性有機層93は100
0Å程度の膜厚が一般的であるので、図5に示した断面
図でも明らかなように、発光性有機層93が、この発光
性有機層93自体の膜厚を越える凹凸面に敷設されるも
のとなり、これに伴い陰極電極94も凹凸面に敷設され
るものとなる。On the other hand, the luminescent organic layer 93 is 100
Since a film thickness of about 0 Å is common, the luminescent organic layer 93 is laid on an uneven surface that exceeds the film thickness of the luminescent organic layer 93 itself, as is clear from the sectional view shown in FIG. As a result, the cathode electrode 94 is also laid on the uneven surface.
【0007】このときに、若しも、図6に示すように発
光性有機層93の側に、上記した面の凹凸により成膜が
行われていない部分を生じたときには、陽極電極92と
陰極電極94が接触して短絡事故を生じるものとなり、
また、若しも図7に示すように陰極電極94の側に成膜
が行われていない部分を生じたときには、この陰極電極
94に断線事故を生じ、何れにしてもドットマトリクス
型有機LED素子90が不良品となり、歩留りの低下な
ど生産性を阻害する問題点を生じ、この点の解決が課題
とされるものとなっていた。At this time, if there is a portion on the side of the luminescent organic layer 93 where the film is not formed due to the above-mentioned unevenness of the surface, as shown in FIG. 6, the anode electrode 92 and the cathode are formed. The electrodes 94 come into contact with each other and cause a short circuit accident,
Further, as shown in FIG. 7, when a portion where the film is not formed is formed on the cathode electrode 94 side, a disconnection accident occurs in the cathode electrode 94, and in any case, the dot matrix type organic LED element. 90 is a defective product, which causes a problem that hinders productivity such as a reduction in yield, and it has been a problem to solve this problem.
【0008】[0008]
【課題を解決するための手段】本発明は前記した従来の
課題を解決するための具体的な手段として、行、列の何
れかの一方向に複数の陽極電極が平行に敷設された透明
基板上に発光性有機層が成膜され、更に前記発光性有機
層上には前記陽電極と直交する方向に複数の陰極電極が
平行に敷設されて成るドットマトリクス型有機LED素
子において、前記陽極電極の夫々の間と該陽極電極の長
手方向外側の端部とには、膜厚を[(陽極電極の膜厚−
絶縁膜の膜厚)の絶対値]<(発光性有機層の膜厚)と
した絶縁膜が設けられていることを特徴とするドットマ
トリクス型有機LED素子を提供することで課題を解決
するものである。As a concrete means for solving the above-mentioned conventional problems, the present invention is a transparent substrate in which a plurality of anode electrodes are laid in parallel in one direction of either row or column. A dot-matrix organic LED device comprising: a light-emitting organic layer formed on the light-emitting organic layer; and a plurality of cathode electrodes arranged in parallel on the light-emitting organic layer in a direction orthogonal to the positive electrode. Of the thickness of the anode electrode and the end portion on the outer side in the longitudinal direction of the anode electrode.
An absolute value of (thickness of insulating film)] <(thickness of light emitting organic layer) is provided to provide a dot matrix type organic LED element, which solves the problem. Is.
【0009】[0009]
【発明の実施の形態】つぎに、本発明を図に示す一実施
形態に基づいて詳細に説明する。図1及び図2に符号1
で示すものは、本発明に係るドットマトリクス型有機L
ED素子(以下に有機LED素子1と略称する)であ
り、この有機LED素子1の、ガラス或いは樹脂など透
明部材で形成された透明基板2上には、ITOなどによ
る陽極電極3の複数が行、列の何れかの一方向に平行に
敷設されているものである点は従来例のものと同様であ
る。Next, the present invention will be described in detail with reference to an embodiment shown in the drawings. Reference numeral 1 in FIGS. 1 and 2
Indicates the dot matrix type organic L according to the present invention.
The organic LED element 1 is an ED element (hereinafter abbreviated as an organic LED element 1), and a plurality of anode electrodes 3 made of ITO or the like are formed on a transparent substrate 2 formed of a transparent member such as glass or resin of the organic LED element 1. It is the same as that of the conventional example in that it is laid in parallel with one of the rows.
【0010】また、前記陽極電極3上には発光性有機層
4が成膜され、更に前記発光性有機層4の上面には、前
記陽極電極3と直交する方向に複数の陰極電極5が形成
されるものである点も従来例のものと同様であるが、本
発明により、夫々の前記陽極電極3の間と、この陽極電
極3の最も外側に位置するものの長手方向外側の端部に
は絶縁膜6が設けられるものとされている。A luminescent organic layer 4 is formed on the anode electrode 3, and a plurality of cathode electrodes 5 are formed on the upper surface of the luminescent organic layer 4 in a direction orthogonal to the anode electrode 3. However, according to the present invention, the gap between the respective anode electrodes 3 and the end portion of the outermost portion of the anode electrodes 3 on the outer side in the longitudinal direction are formed according to the present invention. The insulating film 6 is provided.
【0011】ここで、前記絶縁膜6を形成するに当たっ
ては、前記陽極電極3の間と比較的に狭隘な場所に精度
良く敷設する必要があるので、ホトリソ法などで成膜す
ることが好ましく、従って、ホトリソ可能なSiO2或いは
紫外線硬化など感光性樹脂が絶縁膜6の部材として採用
される。尚、前記陽極電極3の間隔が0.1mm以上と充
分に広い場合には、マスク蒸着法によっても形成は可能
であり、この場合には絶縁膜6の部材として、より広い
範囲からの選択が可能となる。Here, when forming the insulating film 6, it is necessary to lay it in a relatively narrow space between the anode electrodes 3 with high precision, so it is preferable to form the insulating film 6 by a photolithography method or the like. Thus, a photosensitive resin such as photolithography can be SiO 2 or ultraviolet curing is employed as a member of the insulating film 6. If the anode electrode 3 has a sufficiently large distance of 0.1 mm or more, it can be formed by a mask vapor deposition method. In this case, the insulating film 6 can be selected from a wider range. It will be possible.
【0012】また、本発明では前記絶縁膜6の膜厚t3
も限定するものであり、この絶縁膜6の膜厚t3は、前
記陽極電極の膜厚t1と発光性有機層4の膜厚t2とに
より、[(陽極電極の膜厚t1−絶縁膜の膜厚t3)の
絶対値]<(発光性有機層の膜厚t2)の条件を満足す
るものとして形成される。Further, in the present invention, the film thickness t3 of the insulating film 6 is
The film thickness t3 of the insulating film 6 depends on the film thickness t1 of the anode electrode and the film thickness t2 of the light emitting organic layer 4 [(film thickness t1 of anode electrode-film of insulating film The absolute value of thickness t3)] <(thickness t2 of light-emitting organic layer) is satisfied.
【0013】上記の条件を、陽極電極3の膜厚t1が2
000Åであり、発光性有機層4の膜厚t2が1000
Åであると仮定して、より具体的に説明を行えば、陽極
電極3の膜厚t1(即ち、2000Å)から絶縁膜6の
膜厚t3を引き算した値の絶対値が発光性有機層4の膜
厚t2(即ち、1000Å)を越えることのないもので
あり、即ち、上記の条件では絶縁膜6の膜厚t3は、1
000Å以上で3000Å以下となる。Under the above conditions, the thickness t1 of the anode electrode 3 is 2
000Å, and the film thickness t2 of the luminescent organic layer 4 is 1000
More specifically, assuming that Å, the absolute value of the value obtained by subtracting the film thickness t3 of the insulating film 6 from the film thickness t1 of the anode electrode 3 (that is, 2000Å) is the luminescent organic layer 4 Does not exceed the film thickness t2 (that is, 1000Å) of the insulating film 6, that is, the film thickness t3 of the insulating film 6 is 1 under the above conditions.
More than 000Å and less than 3000Å.
【0014】尚、実際の実施に当たっては、陽極電極3
及び発光性有機層4の製造上のバラツキなどを考慮して
充分な余裕を見込み、前記絶縁膜6の膜厚t3は150
0Å以上、2500Å以下などと設定することが好まし
く、更に言えば、後にも説明するように、例えば、18
00Å以上、2200Å以下など、陽極電極3との差が
少ないほどに好ましい結果が得られるものとなる。In actual practice, the anode electrode 3
In consideration of variations in manufacturing the luminescent organic layer 4 and the like, a sufficient margin is expected, and the film thickness t3 of the insulating film 6 is 150.
It is preferable to set it to 0 Å or more and 2500 Å or less, and for example, as described later, for example, 18
The smaller the difference from the anode electrode 3, such as 00 Å or more and 2200 Å or less, the more preferable results can be obtained.
【0015】次いで、上記の構成とした本発明の作用及
び効果について説明を行えば、膜厚t1を有する陽極電
極3間に、透明基板2の表面と陽極電極3の上面との段
差を発光性有機層4の膜厚t2よりも少なくする膜厚t
3の絶縁膜6を設けたことで、本発明の有機LED素子
1では、陽極電極3の上面に敷設される発光性有機層4
はその膜厚t2以下である凹凸面に敷設されるものとな
る。Next, the operation and effect of the present invention having the above-mentioned structure will be described. Between the anode electrodes 3 having a film thickness t1, the difference in level between the surface of the transparent substrate 2 and the top surface of the anode electrodes 3 emits light. The film thickness t that is smaller than the film thickness t2 of the organic layer 4
By providing the insulating film 6 of No. 3, in the organic LED element 1 of the present invention, the luminescent organic layer 4 laid on the upper surface of the anode electrode 3
Will be laid on an uneven surface having a film thickness t2 or less.
【0016】よって、図2に示すように陽極電極3の膜
厚t1よりも絶縁膜6の膜厚t3が薄い状態において
も、或いは、図3に示すように陽極電極3の膜厚t1よ
りも絶縁膜6の膜厚t3が厚い状態においても、発光性
有機層4に上記の凹凸により膜厚が途切れて成膜が行わ
れない部分を生じることはなく、これにより、陽極電極
3と陰極電極5との短絡事故は完全に防止できるものと
なる。Therefore, even when the thickness t3 of the insulating film 6 is thinner than the thickness t1 of the anode electrode 3 as shown in FIG. 2, or as shown in FIG. Even when the film thickness t3 of the insulating film 6 is large, there is no portion where the film thickness is interrupted and the film is not formed due to the above-mentioned unevenness, whereby the anode electrode 3 and the cathode electrode 3 are not formed. Short-circuit accident with 5 can be completely prevented.
【0017】また、前記絶縁膜6により凹凸面の段差が
少なくなったと言うことは、前記したように発光性有機
層4に対する膜面の途切れをなくすると共に、この発光
性有機層4の更に上面に成膜される陰極電極5に対して
も凹凸の段差が減じられ、これにより、陰極電極5にも
膜面の途切れを生じないものとなって、陰極電極5の断
線事故も防止するものとなる。The fact that the unevenness of the uneven surface is reduced by the insulating film 6 eliminates the discontinuity of the film surface with respect to the light emitting organic layer 4 as described above, and further increases the upper surface of the light emitting organic layer 4. The unevenness of the surface of the cathode electrode 5 to be formed on the cathode electrode 5 is reduced, so that the film surface of the cathode electrode 5 is not interrupted and the disconnection accident of the cathode electrode 5 is prevented. Become.
【0018】[0018]
【発明の効果】以上に説明したように本発明により、陽
極電極の夫々の間と、この該陽極電極の長手方向外側の
端部とには、膜厚を[(陽極電極の膜厚−絶縁膜の膜
厚)の絶対値]<(発光性有機層の膜厚)とした絶縁膜
が設けられているドットマトリクス型有機LED素子と
したことで、発光性有機層の敷設面に生じている透明基
板と陽極電極との、発光性有機層の膜厚を越える段差
を、絶縁膜により発光性有機層の膜厚の範囲内と緩和
し、これにより発光性有機層に膜面の途切れを生じて陽
極電極と陰極電極とに短絡事故を生じたり、或いは、陰
極電極に膜面の途切れを生じて断線事故を生じるのを防
止するものであり、これにより、この種のドットマトリ
クス型有機LED素子の部留まりを向上させ生産性の向
上に極めて優れた効果を奏するものである。As described above, according to the present invention, the film thickness is defined as [(thickness of anode electrode-insulation- Absolute value of film thickness] <(film thickness of light emitting organic layer) The dot matrix type organic LED element provided with the insulating film is generated on the laying surface of the light emitting organic layer. The step difference between the transparent substrate and the anode electrode, which exceeds the film thickness of the light emitting organic layer, is mitigated within the range of the film thickness of the light emitting organic layer by the insulating film, which causes a break in the film surface of the light emitting organic layer. This prevents the occurrence of a short circuit accident between the anode electrode and the cathode electrode, or a breakage of the film surface of the cathode electrode, resulting in a disconnection accident. As a result, this kind of dot matrix type organic LED element is provided. It has an extremely excellent effect in improving the productivity and productivity. It is intended to.
【図1】 本発明に係るドットマトリクス型有機LED
素子の一実施形態を示す平面図である。FIG. 1 is a dot-matrix organic LED according to the present invention.
It is a top view showing one embodiment of an element.
【図2】 図1のA―A線に沿う断面図である。FIG. 2 is a sectional view taken along line AA of FIG.
【図3】 同じく本発明に係るドットマトリクス型有機
LED素子の別の実施形態を要部で示す断面図である。FIG. 3 is a sectional view showing another embodiment of the dot-matrix organic LED element according to the present invention as a main part.
【図4】 従来例を示す平面図である。FIG. 4 is a plan view showing a conventional example.
【図5】 図4のB―B線に沿う断面図である。FIG. 5 is a sectional view taken along line BB of FIG. 4;
【図6】 従来例に生じる短絡事故の例を示す説明図で
ある。FIG. 6 is an explanatory diagram showing an example of a short circuit accident that occurs in a conventional example.
【図7】 従来例に生じる断線事故の例を示す説明図で
ある。FIG. 7 is an explanatory diagram showing an example of a disconnection accident that occurs in a conventional example.
1……ドットマトリクス型有機LED素子 2……透明基板 3……陽極電極 4……発光性有機層 5……陰極電極 6……絶縁膜 t1……陽極電極の膜厚 t2……発光性有機層の膜厚 t3……絶縁膜の膜厚 1 ... Dot matrix type organic LED element 2 ... Transparent substrate 3 ... Anode electrode 4 ... Luminescent organic layer 5 ... Cathode electrode 6 ... Insulating film t1 ... Anode film thickness t2 ... Luminescent organic Thickness of layer t3 ... Thickness of insulating film
Claims (1)
極が平行に敷設された透明基板上に発光性有機層が成膜
され、更に前記発光性有機層上には前記陽電極と直交す
る方向に複数の陰極電極が平行に敷設されて成るドット
マトリクス型有機LED素子において、前記陽極電極の
夫々の間と該陽極電極の長手方向外側の端部とには、膜
厚を[(陽極電極の膜厚−絶縁膜の膜厚)の絶対値]<
(発光性有機層の膜厚)とした絶縁膜が設けられている
ことを特徴とするドットマトリクス型有機LED素子。1. A luminescent organic layer is formed on a transparent substrate on which a plurality of anode electrodes are laid in parallel in one direction of rows or columns, and the positive electrode is further formed on the luminescent organic layer. In a dot matrix type organic LED element in which a plurality of cathode electrodes are laid parallel to each other in a direction orthogonal to, a film thickness is set between each of the anode electrodes and an end portion on the outer side in the longitudinal direction of the anode electrodes. Absolute value of (thickness of anode electrode-thickness of insulating film)] <
The dot matrix type organic LED element is characterized in that an insulating film having a thickness (thickness of the light emitting organic layer) is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34502895A JPH09161970A (en) | 1995-12-08 | 1995-12-08 | Dot matrix type organic LED element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34502895A JPH09161970A (en) | 1995-12-08 | 1995-12-08 | Dot matrix type organic LED element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09161970A true JPH09161970A (en) | 1997-06-20 |
Family
ID=18373801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34502895A Pending JPH09161970A (en) | 1995-12-08 | 1995-12-08 | Dot matrix type organic LED element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09161970A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999010861A1 (en) * | 1997-08-21 | 1999-03-04 | Seiko Epson Corporation | Active matrix display |
| WO1999010862A1 (en) * | 1997-08-21 | 1999-03-04 | Seiko Epson Corporation | Active matrix display |
| JPH11121178A (en) * | 1997-10-14 | 1999-04-30 | Matsushita Electric Ind Co Ltd | Organic electroluminescent device and method of manufacturing the same |
| US6339291B1 (en) | 1998-04-10 | 2002-01-15 | Tdk Corporation | Organic electroluminescent device, and its fabrication method |
| US7301277B2 (en) * | 2001-11-02 | 2007-11-27 | Seiko Epson Corporation | Electro-optical apparatus, manufacturing method thereof, and electronic instrument |
| KR100822204B1 (en) * | 2006-06-07 | 2008-04-17 | 삼성에스디아이 주식회사 | Organic light emitting display device |
| CN103824972A (en) * | 2012-11-15 | 2014-05-28 | 住友重机械工业株式会社 | Method for manufacturing organic EL element and organic EL element |
-
1995
- 1995-12-08 JP JP34502895A patent/JPH09161970A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7364939B2 (en) | 1997-08-21 | 2008-04-29 | Seiko Epson Corporation | Active matrix display device |
| WO1999010862A1 (en) * | 1997-08-21 | 1999-03-04 | Seiko Epson Corporation | Active matrix display |
| WO1999010861A1 (en) * | 1997-08-21 | 1999-03-04 | Seiko Epson Corporation | Active matrix display |
| US6373453B1 (en) | 1997-08-21 | 2002-04-16 | Seiko Epson Corporation | Active matrix display |
| US6380672B1 (en) | 1997-08-21 | 2002-04-30 | Seiko Epson Corporation | Active matrix display device |
| US6642651B2 (en) | 1997-08-21 | 2003-11-04 | Seiko Epson Corporation | Active matrix display device |
| US6885148B2 (en) | 1997-08-21 | 2005-04-26 | Seiko Epson Corporation | Active matrix display device |
| JPH11121178A (en) * | 1997-10-14 | 1999-04-30 | Matsushita Electric Ind Co Ltd | Organic electroluminescent device and method of manufacturing the same |
| US6339291B1 (en) | 1998-04-10 | 2002-01-15 | Tdk Corporation | Organic electroluminescent device, and its fabrication method |
| US7301277B2 (en) * | 2001-11-02 | 2007-11-27 | Seiko Epson Corporation | Electro-optical apparatus, manufacturing method thereof, and electronic instrument |
| KR100822204B1 (en) * | 2006-06-07 | 2008-04-17 | 삼성에스디아이 주식회사 | Organic light emitting display device |
| US7969086B2 (en) | 2006-06-07 | 2011-06-28 | Samsung Mobile Display, Co., Ltd. | Organic light emitting display apparatus |
| CN103824972A (en) * | 2012-11-15 | 2014-05-28 | 住友重机械工业株式会社 | Method for manufacturing organic EL element and organic EL element |
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