JPH09155733A - Grinder and wafer treatment device using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make a grinder small and light weight and capable of high speed grinding by forming the grinder with a wafer rotating surface plate to perform rotation and oscillation, as required, and a grinding surface plate on which an abrasive cloth with the diameter being smaller than the diameter of a wafer to be fixed to the wafer rotating surface plate is stuck. SOLUTION: In wafer treatment during manufacturing LSIs or the like, a wafer 1 is fixed to a wafer rotating surface plate 2 and grinding liquid is dropped from a grinding liquid supply nozzle 8 onto the surface of the wafer 1 which is being rotated. A abrasive cloth 5 stuck on the grinding surface plate 6 is pushed against the wafer 1 and then the grinding surface plate 6 is rotated and moved forward and backward to flatten the wafer 1. In this case, by forming the abrasive cloth 5 and the grinding surface plate 6 into disc shape with the diameter being smaller than the diameter of the wafer 1, a grinder is made small and light so that a continuous wafer treatment device for which a thin film forming device and a wafer surface treatment device for the surface treatment of the wafer 1 after ground are connected together may be easily constructed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus and a wafer processing apparatus using the polishing apparatus.

[0002]

2. Description of the Related Art LSI (Large Scale Integrated Circu)
Semiconductor integrated circuit devices such as it) have been promoted to have higher integration, higher speed, and higher performance, and accordingly, the steps on the wafer on which the semiconductor elements are formed are increasing. The flattening technique is an essential technique for increasing the manufacturing yield and reliability of semiconductor integrated circuit devices such as LSI.

By the way, the inventor of the present invention has studied a polishing apparatus used in the manufacturing technology of semiconductor integrated circuit devices. The following is a technique studied by the present inventor,
The outline is as follows.

That is, as a flattening technique in recent semiconductor integrated circuit device manufacturing techniques, a CMP (Chemical Mechanical Polishing) method having a high flattening capability is often used. ing.

The CMP apparatus polishes a wafer by dropping a polishing liquid and pressing a rotating plate to which a polishing cloth is attached onto the wafer. In this case, the rotating plate to which the polishing cloth is attached is larger than the wafer. Further, the wafer is swung along with the rotation.

As a document describing the polishing apparatus, for example, “Semiconductor Manufacturing Equipment Glossary” p106-p1 published on September 28, 1991 by Nihon Kogyo Shimbun.
09 are described in the above.

[0007]

However, the above-mentioned C
In the MP device, the rotating plate to which the polishing cloth is attached is larger than the wafer, and the wafer is rocked with the rotation. Since the width of the device is about 4 m, there is a problem that the device is large.

Further, the above-mentioned CMP apparatus has a problem that the weight of the entire apparatus is a heavy weight of 2 tons to 5 tons.

Therefore, the above-mentioned CMP apparatus has problems that it is difficult to perform maintenance and replacement of the polishing cloth, and that the installation place is limited.

Further, in order to improve the processing capacity, the above-mentioned CMP apparatus and the apparatus for the cleaning step which is required after the wafer is polished by the CMP apparatus and the film-forming apparatus in the previous step for polishing the wafer by the CMP method. Although an apparatus for performing continuous treatment with the above is conceivable, it becomes difficult to put it into practical use because the apparatus for performing such continuous treatment becomes large and heavy.

It is an object of the present invention to provide a polishing apparatus which is small and lightweight and is capable of high speed polishing, and a wafer processing apparatus using the polishing apparatus.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0013]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, the polishing apparatus of the present invention comprises a wafer rotary platen which performs a rotary motion and, if necessary, a swing motion.
And a polishing surface plate to which a polishing cloth having a diameter smaller than the diameter of the wafer fixed to the wafer rotation surface plate is attached.

[0015]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and redundant description will be omitted.

(Embodiment 1) FIG. 1 is a schematic plan view showing a CMP apparatus which is an embodiment of the present invention, and FIG. 2 is a schematic sectional view showing a CMP apparatus which is an embodiment of the present invention. Is.

As shown in FIGS. 1 and 2, the CMP apparatus according to the present embodiment has a wafer rotary platen 2 on which a wafer 1 to be polished is set.

The wafer rotary platen 2 can fix the wafer 1 by vacuum suction or the like, and can rotate by a drive source 4 connected to a rotary shaft 3.

The wafer rotary platen 2 has a structure in which it can be oscillated as needed by a drive source 4 connected to a rotary shaft 3.

On the wafer 1, two polishing surface plates 6 to which a polishing cloth 5 made of, for example, foamed polyurethane is attached with an adhesive tape or the like are arranged. In this case, polishing cloth 5
Has a disk shape having a diameter smaller than the diameter of the wafer 1.

Further, the polishing platen 6 has a disk shape having a diameter smaller than that of the wafer 1, and performs a rotary motion and a back-and-forth motion by a drive source (not shown) connected to the rotary shaft 7. be able to.

Further, the polishing platen 6 is moved up and down by a drive source connected to the rotating shaft 7 to move the wafer 1
The polishing cloth 5 can be pressed against.

The polishing platen 6 has a structure in which it can be oscillated as needed by a drive source connected to the rotary shaft 7.

Further, each polishing surface plate 6 has a structure capable of independently controlling the pressing operation, pressing pressure, rotational speed, vertical movement, rotational movement, back-and-forth movement, and swinging movement of the polishing surface plate 6 on the wafer 1. ing.

On the wafer 1, there is arranged a polishing liquid supply nozzle 8 for supplying a polishing liquid such as an aqueous potassium hydroxide solution or an aqueous ammonia solution containing silica. The polishing liquid supply nozzle 8 can be arranged corresponding to each polishing surface plate 6 according to design specifications.

Further, in the lower part and the peripheral part of the wafer 1,
A polishing liquid recovery body 9 having a mechanism for recovering the polishing liquid after polishing is arranged.

On the wafer 1, for example, an optical type,
A polishing amount measuring device (not shown) such as a capacitance type or a rotating torque type is arranged, and each point of the wafer 1 is polished by monitoring each point of the wafer 1 using the polishing amount measuring device. The quantity can be measured.

The operation of the CMP apparatus of this embodiment described above is as follows.

That is, in the wafer processing in the manufacturing process of a semiconductor integrated circuit device such as an LSI, after fixing the wafer 1 to the wafer rotary platen 2, the drive source 4 rotates the wafer 1.

Next, the polishing liquid is dropped from the polishing liquid supply nozzle 8 onto the surface of the wafer 1.

Next, the polishing cloth 5 attached to the polishing platen 6 is pressed against the wafer 1, and then the polishing platen 6 is rotated and moved back and forth, so that an SOG (Spin On) on the surface of the wafer 1 is performed. A glass film is polished, and the wafer 1 is flattened.

In this case, the amount of polishing at each point of the wafer 1 is measured by monitoring each point of the wafer 1 by the polishing amount measuring device arranged on the wafer 1.

If, as a result of the measurement, the polishing amount of a certain region of the wafer 1 is insufficient, the flatness of each region of the wafer 1 can be increased by intensively polishing that region. The flattening process of No. 1 can be performed with high accuracy.

According to the CMP apparatus of the present embodiment, since the polishing cloth 5 and the polishing platen 6 are disc-shaped having a diameter smaller than the diameter of the wafer 1, the apparatus can be made compact and lightweight. The cost can be reduced and the maintenance can be easily performed.

Further, according to the CMP apparatus of the present embodiment, since the apparatus can be made smaller and lighter, a thin film forming apparatus for forming a thin film to be polished and a surface treatment such as cleaning of a wafer after polishing can be performed. It is easy to configure a continuous wafer processing apparatus that is connected to a wafer surface processing apparatus, etc., and it can be installed in a wafer processing chamber where a semiconductor integrated circuit device such as an LSI is manufactured.

According to the CMP apparatus of this embodiment, since the polishing cloth 5 and the polishing platen 6 have a disk shape having a diameter smaller than the diameter of the wafer 1, the polishing process for one wafer 1 is performed. Since the polishing can be performed using a plurality of polishing platens 6 on which the cloth 5 is set, the polishing platen 6 can be rotated at high speed, and the pressure applied to the wafer 1 can be controlled with high accuracy to polish the wafer 1. By being able to perform the above, the throughput of the polishing process and the flattening process of the wafer 1 can be enhanced.

According to the CMP apparatus of this embodiment, since the polishing cloth 5 and the polishing platen 6 have a disk shape having a diameter smaller than the diameter of the wafer 1, each region of the wafer 1 can be polished, for example. Since in-plane polishing uniformity can be improved by performing selective area polishing, such as polishing a large number of insufficient areas, polishing processing and planarization processing can be performed at high speed and with high accuracy. .

According to the CMP apparatus of this embodiment, since the polishing cloth 5 has a disk shape having a diameter smaller than the diameter of the wafer 1, the polishing cloth 5 has a long life and its replacement frequency can be reduced. Therefore, maintenance such as replacement of the polishing cloth 5 is facilitated and the cost of the polishing cloth 5 can be reduced.

The CMP apparatus of this embodiment has a polishing platen 6 to which a polishing cloth 5 having a diameter smaller than that of the wafer 1 is attached. Therefore, the polishing apparatus of the present invention is not limited to the polishing apparatus by the CMP method, but can be applied to various polishing apparatuses such as a wafer polishing apparatus or a background polishing apparatus, and the wafer 1 as the object to be polished is an LSI or the like. The present invention can be applied to a polishing apparatus for polishing various types of wafers such as a wafer for producing a semiconductor integrated circuit device or a wafer for producing a magnetic head.

(Second Embodiment) FIG. 3 is a schematic plan view showing a CMP apparatus according to another embodiment of the present invention.

As shown in FIG. 3, the CMP of this embodiment is
The apparatus is provided with two polishing surface plates 6 each having a polishing cloth attached on the wafer 1.
The oscillating movements of are directed in different directions.

The other structure is the same as that of the first embodiment.
Since it is the same as the CMP apparatus of No. 1, description thereof is omitted.

According to the CMP apparatus of the present embodiment, the swinging motions of the respective polishing surface plates 6 are in different directions, so that when the flattening process of each region of the wafer 1 is performed, it is unique. Since the degree of freedom such as intensive polishing of the region can be increased, highly accurate flattening processing can be performed.

(Third Embodiment) FIG. 4 is a schematic plan view showing a CMP apparatus according to another embodiment of the present invention.

As shown in FIG. 4, the CMP of this embodiment is
The apparatus is provided with three polishing surface plates 6 each having a polishing cloth attached on the wafer 1.
The forward and backward movements of are in the same direction.

The other structure is the same as that of the first embodiment.
Since it is the same as the CMP apparatus of No. 1, description thereof is omitted.

According to the CMP apparatus of this embodiment, since three polishing surface plates 6 are arranged on one wafer 1, it is possible to perform flattening processing on each region of the wafer 1. Since the polishing amount on each polishing platen 6 can be reduced, maintenance such as replacement of the polishing pad can be reduced.

(Embodiment 4) FIG. 5 is a schematic plan view showing a CMP apparatus according to another embodiment of the present invention.

As shown in FIG. 5, the CMP of this embodiment is
In the apparatus, one polishing platen 6 having a polishing cloth attached on the wafer 1 is arranged, and the back-and-forth movement and swinging motion of the polishing platen 6 polishes the wafer 1 in the diameter direction. The waiting time can be adjusted.

The other structure is the same as that of the first embodiment.
Since it is the same as the CMP apparatus of No. 1, description thereof is omitted.

According to the CMP apparatus of this embodiment, one polishing platen 6 is arranged on one wafer 1 and the polishing platen 6 moves back and forth and swings.
Since the polishing standby time can be adjusted in the diametrical direction, the polishing amount in each region of the wafer 1 can be controlled by one polishing platen 6 to perform the flattening process. .

(Embodiment 5) FIG. 6 is a schematic plan view showing a wafer processing apparatus using a polishing apparatus according to another embodiment of the present invention.

As shown in FIG. 6, the wafer processing apparatus of the present embodiment includes a polishing apparatus 10 such as the CMP apparatus of the first embodiment described above, a thin film forming apparatus 11 for forming a thin film on the surface of a wafer, Wafer surface processing apparatus 12 for performing surface processing on a wafer after polishing, wafer transfer section 13 for loading and unloading wafers to and from polishing apparatus 10, thin film forming apparatus 11, and wafer surface processing apparatus 12, and wafer supply to wafer transfer section 13. A continuous wafer processing apparatus having a wafer loading unit 14 for loading and a wafer unloading unit 15 for unloading a wafer from the wafer transfer unit 13.

In this case, the thin film forming apparatus 11 is a spin coating apparatus capable of forming an insulating film such as an SOG film, a vacuum vapor deposition apparatus capable of forming a wiring thin film such as aluminum, a silicon oxide film or a silicon nitride film. A CVD apparatus capable of forming an insulating film such as a film or a sputtering apparatus capable of forming a wiring thin film such as a refractory metal such as aluminum or tungsten can be used.

The wafer surface treatment apparatus 12 can use a wafer cleaning apparatus.

Further, the polishing apparatus 10 can use the CMP apparatus of the second, third or fourth embodiment described above, in addition to the CMP apparatus of the first embodiment described above.

According to the wafer processing apparatus using the polishing apparatus of this embodiment, since the polishing apparatus 10 such as the CMP apparatus, which can be reduced in size and weight, is used, the polishing apparatus 10 and the object to be polished are Thin film forming apparatus 1 for forming a thin film
1 can be connected to the wafer surface processing apparatus 12 that performs the surface processing of the wafer after polishing, so that the wafer processing can be continuously performed by using these apparatuses to improve the throughput and also the total processing. Since it can be made smaller and lighter, it can be installed in a wafer processing chamber where a semiconductor integrated circuit device such as an LSI is manufactured.

As described above, the invention made by the inventor has been specifically described based on the embodiments of the invention. However, the invention is not limited to the above embodiments, and various modifications may be made without departing from the gist of the invention. Needless to say, it can be changed.

For example, in a wafer processing apparatus using the polishing apparatus of the present invention, a wafer loading section and a wafer unloading section are arranged before and after a linear wafer transfer section, and the present invention is provided on the side of the wafer transfer section. The polishing device, the thin film forming device used in the pre-process of the polishing process, the wafer surface processing device used in the post-process of the polishing process, and the like can be arranged.

[0060]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). According to the CMP apparatus of the present invention, since the polishing cloth and the polishing surface plate have a disk shape having a diameter smaller than the diameter of the wafer, the apparatus can be made smaller and lighter, which can reduce the cost and facilitate maintenance. It can be done easily.

Further, according to the CMP apparatus of the present invention, since the apparatus can be made smaller and lighter, a thin film forming apparatus for forming a thin film to be polished and a wafer surface processing apparatus for performing surface treatment on a wafer after polishing. This makes it easy to configure a continuous wafer processing apparatus in which the above are connected to each other and can be installed in a wafer processing chamber for manufacturing a semiconductor integrated circuit device such as an LSI.

(2). According to the CMP apparatus of the present invention, since the polishing cloth and the polishing surface plate have a disk shape having a diameter smaller than the diameter of the wafer, the polishing surface plate in which the polishing cloth is set for polishing one wafer. Since it is possible to perform polishing using a plurality of wafers, the polishing platen can be rotated at high speed, and the pressure applied to the wafer can be controlled with high accuracy to polish the wafer. The processing capacity of processing can be improved.

Further, since in-plane polishing uniformity can be enhanced by selectively polishing each region of the wafer, for example, polishing a region where the amount of polishing is insufficient, the polishing process and The flattening process can be performed at high speed and with high accuracy.

Furthermore, since the life of the polishing cloth is extended and the replacement frequency thereof can be reduced, maintenance such as replacement of the polishing cloth is facilitated and the cost of the polishing cloth can be reduced.

(3). Since the polishing apparatus of the present invention has the polishing platen to which the polishing cloth having the diameter smaller than the diameter of the wafer is attached, the polishing apparatus is not limited to the polishing apparatus by the CMP method, and the polishing apparatus for the wafer or Wafers that can be applied to various polishing apparatuses such as a background polishing apparatus, and wafers to be polished are wafers of various modes such as wafers for producing semiconductor integrated circuit devices such as LSI or wafers for producing magnetic heads. It can be applied to a polishing device for polishing.

(4). According to the wafer processing apparatus using the polishing apparatus of the present invention, it is possible to reduce the size and weight of the CMP.
By using a polishing apparatus such as an apparatus, it is possible to connect the polishing apparatus, a thin film forming apparatus that forms a thin film to be polished, and a wafer surface processing apparatus that performs the surface treatment of a wafer after polishing. Since it is possible to continuously perform wafer processing by using the above apparatus and improve the throughput and also reduce the size and weight in total, it can be installed in a wafer processing chamber for manufacturing semiconductor integrated circuit devices such as LSI. it can.

[Brief description of the drawings]

FIG. 1 is a schematic plan view showing a CMP apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic sectional view showing a CMP apparatus according to an embodiment of the present invention.

FIG. 3 is a schematic plan view showing a CMP apparatus according to another embodiment of the present invention.

FIG. 4 is a schematic plan view showing a CMP apparatus according to another embodiment of the present invention.

FIG. 5 is a schematic plan view showing a CMP apparatus according to another embodiment of the present invention.

FIG. 6 is a schematic plan view showing a wafer processing apparatus using a polishing apparatus according to another embodiment of the present invention.

[Explanation of symbols]

 1 Wafer 2 Wafer Rotating Platen 3 Rotating Axis 4 Driving Source 5 Polishing Cloth 6 Polishing Plate 7 Rotating Axis 8 Polishing Liquid Supply Nozzle 9 Polishing Liquid Recovery Body 10 Polishing Device 11 Thin Film Forming Device 12 Wafer Surface Processing Device 13 Wafer Transfer Section 14 Wafer loading section 15 Wafer unloading section

Claims (9)

[Claims] 1. A wafer rotating platen that performs a rotating motion and, if necessary, a swinging motion, and a polishing plate having a polishing cloth having a diameter smaller than a diameter of a wafer fixed to the wafer rotating platen. A polishing apparatus having a board. 2. The polishing apparatus according to claim 1, wherein the polishing platen rotates and moves back and forth with respect to the wafer by a drive source. 3. The polishing apparatus according to claim 1 or 2, wherein the polishing platen swings with respect to the wafer by a driving source. 4. The polishing apparatus according to claim 1, wherein two or more polishing platens are arranged for one wafer. 5. The polishing apparatus according to claim 1, wherein a polishing liquid supply nozzle for supplying a polishing liquid onto the wafer is arranged corresponding to each polishing surface plate. Polishing device characterized by. 6. The polishing apparatus according to claim 1, wherein the polishing apparatus is a CMP apparatus. 7. A polishing apparatus according to claim 1, a thin film forming apparatus for forming a thin film on the surface of a wafer, and a wafer surface processing apparatus for performing surface processing on a wafer after polishing. A wafer transfer section for loading and unloading wafers to and from the polishing apparatus, the thin film forming apparatus and the wafer surface processing apparatus, a wafer loading section for supplying wafers to the wafer transfer section, and a wafer unloader for unloading wafers from the wafer transfer section. A wafer processing apparatus having a loading unit. 8. The wafer processing apparatus according to claim 7, wherein the thin film forming apparatus is a spin coating apparatus, a vacuum vapor deposition apparatus, a CVD apparatus or a sputtering apparatus. 9. The wafer processing apparatus according to claim 7, wherein the polishing apparatus is a CMP apparatus, and the wafer surface processing apparatus is a wafer cleaning apparatus.