JPH09151166A - Antiferroelectric liquid crystal compound excellent in temperature dependence of response speed - Google Patents
Antiferroelectric liquid crystal compound excellent in temperature dependence of response speedInfo
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- JPH09151166A JPH09151166A JP7334122A JP33412295A JPH09151166A JP H09151166 A JPH09151166 A JP H09151166A JP 7334122 A JP7334122 A JP 7334122A JP 33412295 A JP33412295 A JP 33412295A JP H09151166 A JPH09151166 A JP H09151166A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 29
- 230000004044 response Effects 0.000 title claims abstract description 27
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 47
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 abstract description 15
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 abstract description 10
- 230000005620 antiferroelectricity Effects 0.000 abstract description 6
- 239000003054 catalyst Substances 0.000 abstract description 3
- 239000012320 chlorinating reagent Substances 0.000 abstract description 3
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 3
- PSHKMPUSSFXUIA-UHFFFAOYSA-N n,n-dimethylpyridin-2-amine Chemical compound CN(C)C1=CC=CC=N1 PSHKMPUSSFXUIA-UHFFFAOYSA-N 0.000 abstract description 2
- GFLIVXPGZCPNDO-UHFFFAOYSA-N (4-octan-2-yloxycarbonylphenyl) 3-fluoro-4-(4-nonoxyphenyl)benzoate Chemical compound C1=CC(OCCCCCCCCC)=CC=C1C1=CC=C(C(=O)OC=2C=CC(=CC=2)C(=O)OC(C)CCCCCC)C=C1F GFLIVXPGZCPNDO-UHFFFAOYSA-N 0.000 abstract 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 19
- 230000005684 electric field Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 239000012043 crude product Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- -1 chloride 3-Fluoro-4'-n-nonyloxy-4-biphenylcarboxylic acid chloride Chemical compound 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229960000549 4-dimethylaminophenol Drugs 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 2
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- HGNFRIHKXCJEIG-UHFFFAOYSA-N 2-fluoro-4-(4-nonoxyphenyl)benzoic acid Chemical compound C1=CC(OCCCCCCCCC)=CC=C1C1=CC=C(C(O)=O)C(F)=C1 HGNFRIHKXCJEIG-UHFFFAOYSA-N 0.000 description 1
- LAXAGRBFQASNFR-UHFFFAOYSA-N 4-hydroxy-2-octylbenzoic acid Chemical compound CCCCCCCCC1=CC(O)=CC=C1C(O)=O LAXAGRBFQASNFR-UHFFFAOYSA-N 0.000 description 1
- JCQWDOLMJSWJKN-UHFFFAOYSA-N C1(=CC=CC=C1)C1=C(C=CC(=C1)C(=O)OC(=O)OC(C)CCCCCC)C1=CC(=C(C=C1)OCCCCCCCCC)F Chemical compound C1(=CC=CC=C1)C1=C(C=CC(=C1)C(=O)OC(=O)OC(C)CCCCCC)C1=CC(=C(C=C1)OCCCCCCCCC)F JCQWDOLMJSWJKN-UHFFFAOYSA-N 0.000 description 1
- WZZHJLXYMDFHIW-UHFFFAOYSA-N C1(=CC=CC=C1)C=1C(=C(C=CC1C(=O)OC(=O)OC(C)CCCCCC)C1=CC=C(C=C1)OCCCCCCCCC)F Chemical compound C1(=CC=CC=C1)C=1C(=C(C=CC1C(=O)OC(=O)OC(C)CCCCCC)C1=CC=C(C=C1)OCCCCCCCCC)F WZZHJLXYMDFHIW-UHFFFAOYSA-N 0.000 description 1
- IAEHVGUVSFMASS-UHFFFAOYSA-N CCCCCCCCCOC1=CC=C(C=C1)C2=C(C(=C(C=C2)C(=O)O)C(=O)OC(C)CCCCCC)F Chemical compound CCCCCCCCCOC1=CC=C(C=C1)C2=C(C(=C(C=C2)C(=O)O)C(=O)OC(C)CCCCCC)F IAEHVGUVSFMASS-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Liquid Crystal Substances (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、室温付近で安定な反強
誘電性を示しかつディスプレイ表示上不可欠な特性であ
る応答速度の温度依存性に優れた反強誘電性液晶化合物
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an antiferroelectric liquid crystal compound exhibiting stable antiferroelectricity at around room temperature and having excellent temperature dependence of response speed which is an essential property for displaying on a display.
【0002】[0002]
【従来技術】液晶表示素子は、1)低電圧作動性、2)
低消費電力性、3)薄形表示、4)受光型などの優れた
特徴を有するため、現在まで、TN方式、STN方式、
ゲスト−ホスト(Gest−Host)方式などが開発
され実用化されている。しかし、現在広く利用されてい
るネマチック液晶を用いたものは、応答速度が数mse
c〜数十msecと遅い欠点があり、応用上種々の制約
を受けている。これらの問題を解決するため、STN方
式や薄層トランジスタなどを用いたアクティブマトリッ
クス方式などが開発されたが、STN型表示素子は、表
示コントラストや視野角などの表示品位は優れたものと
なったが、セルギャップやチルト角の制御に高い精度を
必要とすることや応答がやや遅いことなどが問題となっ
ている。このため、応答性のすぐれた新しい液晶表示方
式の開発が要望されており、光学応答時間がμsecオ
ーダーと極めて短かい超高速デバイスが可能になる強誘
電性液晶の開発が試みられていた。強誘電性液晶は、1
975年、Meyor等によりDOBAMBC(p−デ
シルオキシベンジリデン−p−アミノ−2−メチルブチ
ルシンナメート)が初めて合成された(Le Jour
nal de Physique,36巻1975,L
−69)。さらに、1980年、ClarkとLaga
wallによりDOBAMBCのサブマイクロ秒の高速
応答、メモリー特性など表示デバイス上の特性が報告さ
れて以来、強誘電性液晶が大きな注目を集めるようにな
った〔N.A.Clark,etal.,Appl.P
hys.Lett.36.899(1980)〕。しか
し、彼らの方式には、実用化に向けて多くの技術的課題
があり、特に室温で強誘電性液晶を示す材料は無く、表
示ディスプレーに不可欠な液晶分子の配列制御に有効か
つ実用的な方法も確立されていなかった。この報告以
来、液晶材料/デバイス両面からの様々な試みがなさ
れ、ツイスト二状態間のスイッチングを利用した表示デ
バイスが試作され、それを用いた高速電気光学装置も例
えば特開昭56−107216号などで提案されている
が、高いコントラストや適正なしきい値特性は得られて
いない。このような視点から他のスイッチング方式につ
いても探索され、過渡的な散乱方式が提案された。その
後、1988年に本発明者らによる三安定状態を有する
液晶の三状態スイッチング方式が報告された〔A.D.
L.Chandani,T.Hagiwara,Y.S
uzuki etal.,Japan.J.ofApp
l.Phys.,27,(5),L729−L732
(1988)〕。前記「三状態を有する」とは、第一の
電極基板と所定の間隙を隔てて配置されている第二の電
極基板の間に強誘電性液晶が挟まれてなる液晶電気光学
装置において、前記第一及び第二の電極基板に電界形成
用の電圧が印加されるよう構成されており、図1Aで示
される三角波として電圧を印加したとき、図1Dのよう
に前記強誘電性液晶が、無電界時に分子配向が第一の安
定状態(図1Dの1)を有し、かつ、電界印加時に一方
の電界方向に対し分子配向が前記第一の安定状態とは異
なる第二の安定状態(図1Dの2)を有し、さらに他方
の電界方向に対し前記第一及び第二の安定状態とは異な
る第三の分子配向安定状態(図1Dの3)を有すること
を意味する。なお、この三安定状態、すなわち三状態を
利用する液晶電気光学装置については、本出願人は特願
昭63−70212号として出願し、特開平2−153
322号として公開されている。三安定状態を示す反強
誘電性液晶の特徴をさらに詳しく説明する。クラーク/
ラガウェル(Clark−Lagawall)により提
案された表面安定化強誘電性液晶素子では、S*C相にお
いて強誘電性液晶分子が図2(a),(b)のように一
方向に均一配向した2つの安定状態を示し、印加電界の
方向により、どちらか一方の状態に安定化され、電界を
切ってもその状態が保持される。しかしながら実際に
は、強誘電性液晶分子の配向状態は、液晶分子のダイレ
クターが捩れたツイスト二状態を示したり、層がくの字
に折れ曲ったシエブロン構造を示す。シエブロン層構造
では、スイッチング角が小さくなり低コントラストの原
因になるなど、実用化へ向けて大きな障害になってい
る。一方、“反”強誘電性液晶は三安定状態を示すS
*(3)相では、上記液晶電気光学装置において、無電界時
には、図3(a)に示すごとく隣り合う層毎に分子は逆
方向に傾き反平行に配列し、液晶分子の双極子はお互に
打ち消し合っている。したがって、液晶層全体として自
発分極は打ち消されている。この分子配列を示す液晶相
は、図1Dの1に対応している。さらに、(+)又は
(−)のしきい値より充分大きい電圧を印加すると、図
3(b)および(c)に示す液晶分子が同一方向に傾き
平行に配列する。この状態では、分子の双極子も同一方
向に揃うため自発分極が発生し、強誘電相となる。すな
わち、“反”強誘電性液晶のS*(3)相においては、無電
界時の“反”強誘電相と印加電界の極性による2つの強
誘電相が安定になり、“反”強誘電相と2つの強誘電相
間を直流的しきい値を持って三安定状態間スイッチング
を行うものである。このスイッチングに伴う液晶分子配
列の変化により図4に示すダブル・ヒステリシスを描い
て光透過率が変化する。このダブル・ヒステリシスに、
図4の(A)に示すようにバイアス電圧を印加して、さ
らにパルス電圧を重畳することによりメモリー効果を実
現できる特徴を有する。さらに、電界印加により強誘電
相は層がストレッチされ、ブックシエルフ構造となる。
一方、第三安定状態の“反”強誘電相では類似ブックシ
エルフ構造となる。この電界印加による層構造スイッチ
ングが液晶層に動的シエアーを与えるため駆動中に配向
欠陥が改善され、良好な分子配向が実現できる。そし
て、“反”強誘電性液晶では、プラス側とマイナス側の
両方のヒステリシスを交互に使い画像表示を行なうた
め、自発分極に基づく内部電界の蓄積による画像の残像
現象を防止することができる。以上のように、“反”強
誘電性液晶は、1)高速応答が可能で、2)高いコント
ラストと広い視野角および3)良好な配向特性とメモリ
ー効果が実現できる、非常に有用な液晶化合物と言え
る。“反”強誘電性液晶の三安定状態を示す液晶相につ
いては、1)A.D.L.Chandani eta
l.,Japan J.Appl.Phys.,28,L
−1265(1989)、2)H.Orihara e
tal.,JapanJ.Appl.Phys.,29,
L−333(1990)に報告されており、“反”強誘
電的性質にちなみS*CA相(Antiferroel
ectric Smectic C*相)と命名してい
る。本発明者らは、この液晶相が三安定状態間のスイッ
チングを行なうためS*(3)相と定義した。三安定状態を
示す“反”強誘電相S*(3)を相系列に有する液晶化合物
は、本発明者の出願した特開平1−316367号、特
開平1−316372号、特開平1−316339号、
特開平2−28128号及び市橋等の特開平1−213
390号公報があり、また三安定状態を利用した液晶電
気光学装置としては本出願人は特開平2−40625
号、特開平2−153322号、特開平2−17372
4号において新しい提案を行っている。“反”強誘電性
液晶を液晶ディスプレイへ応用する場合、1)動作温度
範囲、2)応答速度、3)自発分極、4)ヒステリシス
特性等を単一液晶で全て満足させることは困難であり、
通常十数種類の混合液晶として調製される。現在、一般
的に反強誘電性液晶材料として知られている反強誘電性
液晶化合物は応答速度の温度依存性が大きいため、ディ
スプレイ表示した際に、表示むら等の欠点が生じる可能
性があることが懸念されている。2. Description of the Related Art Liquid crystal display devices are 1) low-voltage operable 2).
Since it has excellent features such as low power consumption, 3) thin display, and 4) light receiving type, TN method, STN method,
A guest-host method has been developed and put to practical use. However, a nematic liquid crystal that is widely used at present has a response speed of several mse.
It has a drawback as slow as c to several tens of msec, and is subject to various restrictions in application. In order to solve these problems, an STN method and an active matrix method using a thin layer transistor have been developed, but the STN type display element has excellent display quality such as display contrast and viewing angle. However, there are problems that high accuracy is required for controlling the cell gap and the tilt angle and that the response is rather slow. For this reason, the development of a new liquid crystal display system having excellent responsiveness has been demanded, and the development of a ferroelectric liquid crystal capable of realizing an ultrahigh-speed device having an extremely short optical response time on the order of μsec has been attempted. Ferroelectric liquid crystal has 1
DOBAMBC (p-decyloxybenzylidene-p-amino-2-methylbutyl cinnamate) was first synthesized by Meyor et al. In 975 (Le Jour).
nal de Physique, vol. 36, 1975, L
-69). In addition, 1980, Clark and Laga
Since the characteristics of display devices such as sub-microsecond high-speed response of DOBAMBC and memory characteristics have been reported by WALL, ferroelectric liquid crystals have attracted great attention [N. A. Clark, et al. , Appl. P
hys. Lett. 36.899 (1980)]. However, their method has many technical problems for practical use. Especially, there is no material showing ferroelectric liquid crystal at room temperature, and it is effective and practical for the alignment control of liquid crystal molecules which is indispensable for display. The method was not established either. Since this report, various attempts have been made from both sides of liquid crystal materials / devices, prototype display devices utilizing switching between twisted two states have been produced, and high-speed electro-optical devices using the same have been disclosed, for example, in JP-A-56-107216. However, high contrast and proper threshold characteristics have not been obtained. From such a viewpoint, other switching schemes have been searched, and a transient scattering scheme has been proposed. Then, in 1988, the present inventors reported a three-state switching method of a liquid crystal having a tristable state [A. D.
L. Chandani, T .; Hagiwara, Y .; S
uzuki et al. , Japan. J. ofApp
l. Phys. , 27, (5), L729-L732
(1988)]. The above-mentioned “having three states” means a liquid crystal electro-optical device in which a ferroelectric liquid crystal is sandwiched between a first electrode substrate and a second electrode substrate which is arranged with a predetermined gap. A voltage for forming an electric field is applied to the first and second electrode substrates, and when the voltage is applied as the triangular wave shown in FIG. 1A, the ferroelectric liquid crystal is not present as shown in FIG. 1D. When the electric field is applied, the molecular orientation has a first stable state (1 in FIG. 1D), and when an electric field is applied, the molecular orientation is different from the first stable state in one electric field direction (the second stable state (FIG. 1)). 1D 2), and further has a third molecular orientation stable state (3 in FIG. 1D) different from the first and second stable states with respect to the other electric field direction. Regarding the liquid crystal electro-optical device utilizing the tri-stable state, that is, the tri-state, the applicant of the present application filed as Japanese Patent Application No. 63-70212 and disclosed in JP-A-2-153.
It is published as No. 322. The characteristics of the antiferroelectric liquid crystal exhibiting the tristable state will be described in more detail. Clerk/
In the surface-stabilized ferroelectric liquid crystal device proposed by Clark-Lagawall, the ferroelectric liquid crystal molecules are uniformly aligned in one direction in the S * C phase as shown in FIGS. 2 (a) and 2 (b). One of two stable states is shown, and depending on the direction of the applied electric field, it is stabilized in either one of the states, and that state is maintained even when the electric field is cut off. However, in reality, the alignment state of the ferroelectric liquid crystal molecules shows a twisted two-state in which the director of the liquid crystal molecules is twisted, or the layer has a chevron structure in which the layers are bent. With the Sieblon layer structure, the switching angle becomes small, which causes low contrast, which is a major obstacle to practical use. On the other hand, "anti" ferroelectric liquid crystal shows S which shows tristable state.
* In the phase (3), in the above liquid crystal electro-optical device, when there is no electric field, the molecules in each adjacent layer are tilted in opposite directions and antiparallel to each other as shown in FIG. Cancel each other out. Therefore, the spontaneous polarization is canceled in the entire liquid crystal layer. The liquid crystal phase exhibiting this molecular arrangement corresponds to 1 in FIG. 1D. Further, when a voltage sufficiently higher than the threshold value of (+) or (−) is applied, the liquid crystal molecules shown in FIGS. 3B and 3C are arranged in parallel in the same direction. In this state, the dipoles of the molecules are also aligned in the same direction, so that spontaneous polarization occurs and a ferroelectric phase is formed. That is, in the S * (3) phase of the “anti” ferroelectric liquid crystal, the “anti” ferroelectric phase when there is no electric field and the two ferroelectric phases depending on the polarity of the applied electric field are stable, and the “anti” ferroelectric liquid crystal is stable. Switching between the three stable states is performed with a DC threshold value between the phase and the two ferroelectric phases. Due to the change in the liquid crystal molecule arrangement accompanying the switching, the light transmittance changes in a double hysteresis shown in FIG. In this double hysteresis,
As shown in FIG. 4A, a memory effect can be realized by applying a bias voltage and further superimposing a pulse voltage. Further, the layer of the ferroelectric phase is stretched by the application of an electric field, and a bookshelf structure is formed.
On the other hand, the "anti" ferroelectric phase in the third stable state has a similar bookshelf structure. Since the layer structure switching by the application of the electric field gives a dynamic shear to the liquid crystal layer, alignment defects are improved during driving, and good molecular alignment can be realized. In the "anti-" ferroelectric liquid crystal, image display is performed by using both the hysteresis on the plus side and the hysteresis on the minus side alternately, so that an afterimage phenomenon of an image due to accumulation of an internal electric field based on spontaneous polarization can be prevented. As described above, the “anti” ferroelectric liquid crystal is a very useful liquid crystal compound that can achieve 1) high-speed response, 2) high contrast and wide viewing angle, and 3) good alignment characteristics and memory effect. Can be said. Regarding the liquid crystal phase showing the tristable state of "anti" ferroelectric liquid crystal, 1) A. D. L. Chandani eta
L., Japan J. Appl. Phys., 28 , L
-1265 (1989), 2) H.M. Orihara e
tal., Japan J. Appl. Phys., 29 ,
L-333 (1990), S * CA phase (Antiferroel) associated with "anti" ferroelectric properties.
It is named as electric Sictic C * phase). The present inventors have defined this liquid crystal phase as the S * (3) phase because it switches between the three stable states. The liquid crystal compounds having the "anti" ferroelectric phase S * (3) showing a tristable state in the phase series are disclosed in Japanese Patent Application Laid-Open Nos. 1-331667, 1-316372, and 1-316339. issue,
JP-A-2-28128 and JP-A-1-213 of Ichihashi
No. 390, and as a liquid crystal electro-optical device utilizing the tristable state, the present applicant discloses in Japanese Patent Laid-Open No. 2-40625.
JP-A-2-153322, JP-A-2-17372
We are making a new proposal in issue 4. When applying “anti” ferroelectric liquid crystal to a liquid crystal display, it is difficult to satisfy all of 1) operating temperature range, 2) response speed, 3) spontaneous polarization, 4) hysteresis characteristics, etc. with a single liquid crystal.
Usually, it is prepared as a mixed liquid crystal of more than ten kinds. At present, the antiferroelectric liquid crystal compound, which is generally known as an antiferroelectric liquid crystal material, has a large temperature dependence of the response speed, and therefore, when displayed on a display, defects such as display unevenness may occur. That is a concern.
【0003】[0003]
【発明が解決しようとする課題】本発明の目的は、従来
知られている反強誘電性液晶化合物の主骨格を修飾する
ことにより、具体的には主骨格のフッ素修飾場所を選択
することにより、安定な反強誘電性を示すとともに、デ
ィスプレイに充分使用できる応答速度の温度依存性に優
れた新規な反強誘電性液晶化合物を提供することであ
る。The object of the present invention is to modify the main skeleton of a conventionally known antiferroelectric liquid crystal compound, and more specifically, to select the fluorine modification site of the main skeleton. Another object of the present invention is to provide a novel antiferroelectric liquid crystal compound that exhibits stable antiferroelectricity and is excellent in temperature dependence of response speed that can be sufficiently used in displays.
【0004】[0004]
【課題を解決するための手段】本発明者らは、上記目的
を達成するために、具体的には、特定構造の反強誘電性
液晶化合物の主骨格におけるフッ素修飾場所の最適位置
の発見に鋭意努力を傾注した結果従来の反強誘電性液晶
化合物よりも応答速度の温度依存性に優れた反強誘電性
液晶化合物を見出し、本発明を完成するに至った。[Means for Solving the Problems] In order to achieve the above-mentioned object, the present inventors have specifically discovered the optimum position of a fluorine modification site in the main skeleton of an antiferroelectric liquid crystal compound having a specific structure. As a result of earnest efforts, the inventors have found an antiferroelectric liquid crystal compound having a temperature dependence of response speed superior to that of a conventional antiferroelectric liquid crystal compound, and completed the present invention.
【0005】本発明は、下記一般式The present invention has the following general formula
【化2】 (式中、R1は炭素数4〜12のアルキル基よりなる群
から独立して選ばれた基であり、R2は炭素数4、6、
8、10のアルキル基よりなる群から独立して選ばれた
基であり、*は光学活性炭素を示す。)で表わされる反
強誘電性液晶化合物に関する。R2のものが選択的に反
強誘電性を示すのは興味深いところである。Embedded image (In the formula, R 1 is a group independently selected from the group consisting of alkyl groups having 4 to 12 carbon atoms, R 2 is 4, 6 carbon atoms,
It is a group independently selected from the group consisting of 8 and 10 alkyl groups, and * represents an optically active carbon. )). It is interesting that R 2 selectively exhibits antiferroelectricity.
【0006】本発明化合物を列挙すると下記表のとおり
であるが、R1がC9またはC10のものの特性が優れてお
り、R1がC9H19−、R2がC6H13−の組合せのものが
好ましい。The compounds of the present invention are listed in the following table. The compounds having R 1 of C 9 or C 10 have excellent characteristics, R 1 is C 9 H 19 -and R 2 is C 6 H 13-. The combination of is preferable.
【表1】 [Table 1]
【0007】前記構造式を有するもののうち、下式で表
わされるτI(応答速度の温度依存性を示す指標)が1
〜2の反強誘電性液晶化合物であることが好ましい。Among those having the above structural formula, τI (index indicating the temperature dependence of response speed) represented by the following formula is 1
It is preferably an antiferroelectric liquid crystal compound of No. 2 to No. 2.
【数2】 τI=log10(τ30)÷log10(τ60) …(i) τ30;30℃の応答速度 τ60;60℃の応答速度[Formula 2] τI = log 10 (τ 30 ) ÷ log 10 (τ 60 ) ... (i) τ 30 ; response speed at 30 ° C. τ 60 ; response speed at 60 ° C.
【0008】本発明化合物の一般的な合成方法を以下に
示す。下記の反応式に示すように、4′−アルキルオキ
シ−3−フルオロ−4−ビフェニルカルボン酸と塩化チ
オニル等の塩素化剤とを反応させることにより、4′−
アルキルオキシ−3−フルオロ−4−ビフェニルカルボ
ン酸クロリドを調整する。これに、従来の方法で調整し
た2−アルキル−4−ヒドロキシベンゾエートを塩化メ
チレンを溶媒とし、トリエチルアミン(以下TEAと略
す)、ジメチルアミノピリジン(以下DMAPと略す)
を触媒として、窒素雰囲気下室温で一晩以上反応させ
る。この反応溶液を塩酸溶液で洗浄し、無水硫酸マグネ
シウムで脱水し、塩化メチレンを蒸留することにより、
粗生成物を得る。この粗生成物をヘキサン/酢酸エチル
の混合溶液でシリカゲルを用いて分離精製し、4−(2
−アルコキシカルボニル)フェニル−4′−アルキルオ
キシ−2−フルオロビフェニル−4−カルボキシレート
を得る。これは、エタノールを用いて更に精製すること
ができる。また、上記の粗生成物の分離精製、エステル
合成及び液晶の再結晶は前記方法以外にも公知の手法に
より代替することができる。A general method for synthesizing the compound of the present invention is shown below. As shown in the following reaction formula, by reacting 4'-alkyloxy-3-fluoro-4-biphenylcarboxylic acid with a chlorinating agent such as thionyl chloride, 4'-
Prepare alkyloxy-3-fluoro-4-biphenylcarboxylic acid chloride. In addition to this, 2-alkyl-4-hydroxybenzoate prepared by a conventional method using methylene chloride as a solvent, triethylamine (hereinafter abbreviated as TEA), dimethylaminopyridine (hereinafter abbreviated as DMAP)
Is used as a catalyst and reacted overnight at room temperature in a nitrogen atmosphere. By washing this reaction solution with a hydrochloric acid solution, dehydrating it with anhydrous magnesium sulfate, and distilling methylene chloride,
A crude product is obtained. The crude product was separated and purified on silica gel with a mixed solution of hexane / ethyl acetate to give 4- (2
-Alkoxycarbonyl) phenyl-4'-alkyloxy-2-fluorobiphenyl-4-carboxylate is obtained. It can be further purified using ethanol. The separation and purification of the crude product, ester synthesis, and recrystallization of liquid crystal can be replaced by known methods other than the above method.
【0009】[0009]
【化3】 Embedded image
【0010】応答速度の測定方法は下記のとおりであ
る。化合物をポリイミドを塗布しラビング処理を施した
透明電極付ガラスからなる厚さ2μmのセルに注入し、
液晶物性測定セルをホットステージにセットし、これを
2枚の偏光板を直交させた光電子倍増管付き偏光顕微鏡
に無電界の状態で暗視野となるように配置した。セル中
の液晶が反強誘電性相であるときに、セルに図5に示す
ような±50Vの矩形波を印加したときの光の相対透過
率の変化から応答時間τを求めることができる。τは強
誘電相の状態(マイナス側の矩形波電圧終了時)から反
強誘電相の状態を経由して次の強誘電相の状態(プラス
側の矩形波電圧印加により相対透過率が90%に達した
とき)になるまでの時間であり、その単位はμsecで
ある。The method of measuring the response speed is as follows. The compound was injected into a cell with a thickness of 2 μm made of glass with a transparent electrode which was coated with polyimide and subjected to rubbing treatment,
The liquid crystal physical property measuring cell was set on a hot stage, and the cell was placed in a polarization microscope with a photomultiplier tube in which two polarizing plates were orthogonal to each other so as to have a dark field in the absence of an electric field. When the liquid crystal in the cell is in the antiferroelectric phase, the response time τ can be determined from the change in the relative transmittance of light when a rectangular wave of ± 50 V as shown in FIG. 5 is applied to the cell. τ is the state of the ferroelectric phase (at the end of the rectangular wave voltage on the minus side), the state of the next ferroelectric phase via the state of the antiferroelectric phase (the relative transmittance is 90% by applying the rectangular wave voltage on the plus side). ), And the unit is μsec.
【0011】[0011]
【実施例】以下の実施例において、前記一般式(1)の
反強誘電性液晶化合物が従来の反強誘電性液晶化合物よ
りも応答速度の温度依存性において優れた結果が得られ
ることを示すが、本発明はこれにより限定されるもので
はない。EXAMPLES The following examples show that the antiferroelectric liquid crystal compound of the general formula (1) gives superior results in the temperature dependence of the response speed than the conventional antiferroelectric liquid crystal compounds. However, the present invention is not limited thereto.
【0012】実施例1 下記式Example 1 The following formula
【化4】 で示される4−(2−オクチルオキシカルボニル)フェ
ニル−4′−n−ノニルオキシ−2−フルオロビフェニ
ル−4−カルボキシレートの合成 3−フルオロ−4′−n−ノニルオキシ−4−ビフェニ
ルカルボン酸と塩化チオニル等の塩素化剤とを反応させ
ることにより、3−フルオロ−4′−n−ノニルオキシ
−4−ビフェニルカルボン酸クロリドを調整する。この
化合物0.27g(0.7mmol)に、従来の方法で
調整した2−オクチル−4−ヒドロキシベンゾエート
0.20g(0.8mmol)を塩化メチレンを溶媒と
し、TEA0.08g(0.8mmol)、DMAP
0.03g(0.2mmol)を触媒として、窒素雰囲
気下室温で一晩以上反応させる。この反応溶液を塩酸溶
液で洗浄し、無水硫酸マグネシウムで脱水し、塩化メチ
レンを蒸留することにより、粗生成物を得る。この粗生
成物をヘキサン/酢酸エチルの20/1(vol/vo
l)混合溶液でシリカゲルを用いて分離精製し、4−
(2−オクチルオキシカルボニル)−4′−n−ノニル
オキシ−2−フルオロビフェニル−4−カルボキシレー
ト0.43g(92%)を得る。これは、エタノールを
用いて更に精製することができる。Embedded image Synthesis of 4- (2-octyloxycarbonyl) phenyl-4'-n-nonyloxy-2-fluorobiphenyl-4-carboxylate represented by 3-fluoro-4'-n-nonyloxy-4-biphenylcarboxylic acid and chloride 3-Fluoro-4'-n-nonyloxy-4-biphenylcarboxylic acid chloride is prepared by reacting with a chlorinating agent such as thionyl. 0.20 g (0.8 mmol) of 2-octyl-4-hydroxybenzoate prepared by a conventional method was added to 0.27 g (0.7 mmol) of this compound using methylene chloride as a solvent, and 0.08 g (0.8 mmol) of TEA was added. DMAP
Using 0.03 g (0.2 mmol) as a catalyst, the reaction is performed overnight at room temperature under a nitrogen atmosphere. The reaction solution is washed with a hydrochloric acid solution, dehydrated with anhydrous magnesium sulfate, and methylene chloride is distilled to obtain a crude product. This crude product was mixed with hexane / ethyl acetate 20/1 (vol / vo).
l) Separation and purification using silica gel with the mixed solution, 4-
0.43 g (92%) of (2-octyloxycarbonyl) -4'-n-nonyloxy-2-fluorobiphenyl-4-carboxylate is obtained. It can be further purified using ethanol.
【0013】本化合物の1H−NMR(CDCl3中、T
MS基準、δ値ppm)は8.3〜6.9(m,11
H),5.3〜5.1(m,1H),4.1〜3.9
(t,2H),1.9〜0.8(m,33H)であっ
た。 1 H-NMR of this compound (T in CDCl 3
MS standard, δ value ppm) is 8.3 to 6.9 (m, 11
H), 5.3-5.1 (m, 1H), 4.1-3.9.
(T, 2H) and 1.9 to 0.8 (m, 33H).
【0014】また、上記化合物をポリイミドを塗布しラ
ビング処理を施した透明電極付ガラスからなる厚さ2μ
mのセルに注入し、ホットステージ付偏光顕微鏡観察に
よる相転移温度を表2に示す。また、60℃、30℃に
おける応答速度及び式(i)で表わされるτIも表2に
示す。The above compound is coated with polyimide and rubbed to form a glass with a transparent electrode having a thickness of 2 μm.
Table 2 shows the phase transition temperatures obtained by injecting into a m cell and observing with a polarizing microscope with a hot stage. Table 2 also shows response speeds at 60 ° C. and 30 ° C. and τI represented by the formula (i).
【0015】比較例1 下記式Comparative Example 1 The following formula
【化5】 で示される4−(2−オクチルオキシカルボニル)フェ
ニル−4′−n−ノニルオキシ−3′−フルオロビフェ
ニル−4−カルボキシレートを、ポリイミドを塗布しラ
ビング処理を施した透明電極付ガラスからなる厚さ2μ
mのセルに注入し、ホットステージ付偏光顕微鏡観察に
よリ求めた相転移温度を表2に示す。また、60℃、3
0℃における応答速度及び式(i)で表わされるτIも
表2に示す。Embedded image Of 4- (2-octyloxycarbonyl) phenyl-4'-n-nonyloxy-3'-fluorobiphenyl-4-carboxylate represented by 2μ
Table 2 shows the phase transition temperatures obtained by injecting into the m cell and observing with a polarizing microscope with a hot stage. Also, 60 ℃, 3
Table 2 also shows the response speed at 0 ° C. and τI represented by the formula (i).
【0016】比較例2 下記式Comparative Example 2 The following formula
【化6】 で示される4−(2−オクチルオキシカルボニル)−3
−フルオロフェニル−4′−n−ノニルオキシビフェニ
ル−4−カルボキシレートを、ポリイミドを塗布しラビ
ング処理を施した透明電極付ガラスからなる厚さ2μm
のセルに注入し、ホットステージ付偏光顕微鏡観察によ
リ求めた相転移温度を表2に示す。また、60℃、30
℃における応答速度及び式(i)で表わされるτIも表
2に示す。[Chemical 6] 4- (2-octyloxycarbonyl) -3 represented by
-Fluorophenyl-4'-n-nonyloxybiphenyl-4-carboxylate made of glass with a transparent electrode, which was coated with polyimide and rubbed, and had a thickness of 2 μm.
Table 2 shows the phase transition temperatures obtained by observing with a polarizing microscope with a hot stage. Also, 60 ℃, 30
Table 2 also shows the response speed at ° C and τI represented by the formula (i).
【0017】比較例3 下記式Comparative Example 3 The following formula
【化7】 で示される4−(2−オクチルオキシカルボニル)−2
−フルオロフェニル−4′−n−ノニルオキシビフェニ
ル−4−カルボキシレートを、ポリイミドを塗布しラビ
ング処理を施した透明電極付ガラスからなる厚さ2μm
のセルに注入し、ホットステージ付偏光顕微鏡観察によ
リ求めた相転移温度を表2に示す。また、60℃、30
℃における応答速度及び式(i)で表わされるτIも表
2に示す。Embedded image 4- (2-octyloxycarbonyl) -2 represented by
-Fluorophenyl-4'-n-nonyloxybiphenyl-4-carboxylate made of glass with a transparent electrode, which was coated with polyimide and rubbed, and had a thickness of 2 μm.
Table 2 shows the phase transition temperatures obtained by observing with a polarizing microscope with a hot stage. Also, 60 ℃, 30
Table 2 also shows the response speed at ° C and τI represented by the formula (i).
【0018】[0018]
【表2】 *1 30℃では反強誘電性を示さない *2 50Vでは応答速度が測定できない[Table 2] * 1 No antiferroelectricity at 30 ° C * 2 Response speed cannot be measured at 50V
【0019】[0019]
【効果】特定構造の反強誘電性液晶化合物における主骨
格の最適位置をフッ素修飾したことにより、従来のフッ
素修飾型反強誘電性液晶化合物よりも室温付近において
安定な反強誘電性を示し、かつ応答速度の温度依存性の
小さな反強誘電性液晶化合物を提供することができた。[Effect] By modifying the optimum position of the main skeleton of the antiferroelectric liquid crystal compound with a specific structure with fluorine, it exhibits more stable antiferroelectricity at room temperature than conventional fluorine-modified antiferroelectric liquid crystal compounds. In addition, it was possible to provide an antiferroelectric liquid crystal compound having a small temperature dependence of response speed.
【図1】(A)は印加される三角波を、(B)は市販の
ネマチック液晶の、(C)は二状態液晶の、(D)は三
安定状態液晶の、それぞれの光学応答特性を示す。1 (A) shows an applied triangular wave, (B) shows a commercially available nematic liquid crystal, (C) shows a two-state liquid crystal, and (D) shows a tristable state liquid crystal. .
【図2】クラーク/ラガウェルにより提案された強誘電
性液晶分子の二つの安定した配向状態を示す。FIG. 2 shows two stable alignment states of a ferroelectric liquid crystal molecule proposed by Clark / Ragawell.
【図3】(A)は、本発明の“反”強誘電性液晶分子の
三つの安定した配向状態を示し、(B)は、Aの各
(a)、(b)、(c)に対応した三状態スイッチング
と液晶分子配列の変化を示す。FIG. 3 (A) shows three stable alignment states of the “anti” ferroelectric liquid crystal molecules of the present invention, and (B) shows each of (A), (b) and (c) of A. The corresponding three-state switching and the change of the liquid crystal molecule arrangement are shown.
【図4】“反”強誘電性液晶分子が印加電圧に対してダ
ブルヒステリシスを描いて光透過率が変化することを示
す印加電圧−光透過率特性図である。FIG. 4 is an applied voltage-light transmittance characteristic diagram showing that the “anti” ferroelectric liquid crystal molecules change their light transmittance by drawing a double hysteresis with respect to an applied voltage.
【図5】(A)は印加電圧と時間の関係を示し、(B)
はその印加電圧がかかったときの液晶分子の応答状態を
示すグラフである。FIG. 5A shows a relationship between applied voltage and time, and FIG.
Is a graph showing a response state of liquid crystal molecules when the applied voltage is applied.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山内 俊男 東京都千代田区霞が関3丁目2番5号 昭 和シェル石油株式会社内 ─────────────────────────────────────────────────── --Continued front page (72) Inventor Toshio Yamauchi 3-5 Kasumigaseki, Chiyoda-ku, Tokyo Showa Shell Sekiyu Co., Ltd.
Claims (2)
から独立して選ばれた基であり、R2は炭素数4、6、
8、10のアルキル基よりなる群から独立して選ばれた
基であり、*は光学活性炭素を示す。)で表わされる反
強誘電性液晶化合物。[Claim 1] The following general formula: (In the formula, R 1 is a group independently selected from the group consisting of alkyl groups having 4 to 12 carbon atoms, R 2 is 4, 6 carbon atoms,
It is a group independently selected from the group consisting of 8 and 10 alkyl groups, and * represents an optically active carbon. An antiferroelectric liquid crystal compound represented by the formula:
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