JPH09148258A - Vapor growth device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device for controlling a sample temperature and generating a sample with a uniform film thickness by a method wherein a plurality of fine infrared rays are irradiated to the sample. SOLUTION: A plurality of window holes 2a to 2n are formed in a sample pedestal 2 on which a sample is placed and top ends of optical cables 3a to 3n connecting with light sources 4a to 4n are inserted into the respective window holes 2a to 2n. The light sources 4a to 4n emit infrared rays of light quantity corresponding to a signal level of a device signal input from an optical source control part 5, and the light source control part 5 outputs a drive signal to the respective light sources 4a to 4n based on a drive control signal of each of the light sources 4a to 4n input from a system control part 6. The system control part 6 stores correlation data of change quantity of light quantity (light quantity change quantity) of each of the light sources 4a to 4n and change quantity of a film thickness (film thickness change quantity) of the sample generated on the sample pedestal 2 in a data memory, search the correlation data based on a film thickness to be generated, decides supply quantity of infrared rays supplied by each of the light sources 4a to 4n, and outputs a drive control signal for each of the light sources 4a to 4n to the light source control part 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus, and more particularly to a vapor phase growth apparatus for forming a uniform film thickness by controlling heating of a sample.

[0002]

2. Description of the Related Art There is vapor phase deposition (CVD) as a technique for growing a single crystal or a polycrystal on a substrate by utilizing a chemical reaction in the vapor phase. In this vapor phase growth, a sample ( The wafer is heated and the compound gas is decomposed by the thermal energy generated from the surface of the wafer to form a thin film on the surface of the sample. Therefore, to ensure the uniformity of the formed thin film, the gas distribution and sample Heating is an important factor.

As the sample heating method, a heating method in which the entire sample is heated by a resistance heating method, a lamp heating method or the like has hitherto been the mainstream.

However, in order to control the film thickness more uniformly, it is necessary to control the temperature distribution in the sample surface more finely.

To control the temperature distribution on the sample surface, for example, a plurality of window holes are provided in a sample table on which a sample to be heated is placed, and the tips of optical fibers are inserted into the window holes. At the rear end of the optical fiber, a sample heating device (see Japanese Patent Publication No. 6-9187) is proposed, which is provided with an infrared light source capable of arbitrarily controlling the supply amount.

According to this sample heating apparatus, by partially controlling the infrared light for heating the sample, the surface temperature distribution of the sample can be controlled and the film thickness can be made uniform.

[0007]

However, in such a conventional vapor phase growth apparatus, it is only proposed to irradiate the sample surface with infrared light through a plurality of optical fibers, and the red light is not emitted. How to control the supply amount of outside light is not described, and it is not an appropriate solution.

If it is intended to control the supply amount of infrared light by using the sample heating device, for example, the film thickness is measured and the supply amount of infrared light is calculated from the measurement result. When the infrared light supply amount is controlled while performing the trial work, it takes a long time to adjust the infrared light supply amount, which is not realistic, and there is a problem that productivity is reduced.

Therefore, in the invention according to claim 1, the correlation data of the change rate of the infrared light supply amount and the change rate of the film thickness with respect to the change rate of the infrared light supply amount is previously stored in a memory as a correlation database. Provided is a vapor phase growth apparatus capable of producing a uniform film thickness with good productivity by individually controlling the supply amounts of a plurality of infrared lights that are stored and irradiated on a sample based on the correlation database. The purpose is to do.

According to the second aspect of the present invention, the film thickness at which the correlation data between the change rate of the infrared supply amount and the change rate of the film thickness is actually generated and the infrared supply amount when the film thickness is generated are shown. An object of the present invention is to provide a vapor phase growth apparatus capable of optimizing the correlation data on a production basis by sequentially accumulating the correlation data and producing a more uniform film thickness.

According to the third aspect of the present invention, the infrared light emitted from the light source is guided by an optical fiber to irradiate the sample, and thereby the temperature of a finer fine region of the sample can be controlled. Is intended to provide.

[0012]

According to a first aspect of the present invention, there is provided a vapor phase growth apparatus in which a sample to be heated is placed and a plurality of window holes are formed in the sample stage, and one end portion of the sample hole is formed in the window hole. A plurality of light introducing means connected to the plurality of light sources which are inserted and the other end of which emits infrared light, and a red light which controls the supply amount of infrared light of each of the light sources connected to each of the light introducing means. External light control means, data storage means for storing correlation data between the amount of change in the supply amount of infrared light and the amount of change in the film thickness of the thin film generated on the sample, and the film thickness of the generated thin film And a control means for controlling the infrared light supply amount of each of the light sources by searching the correlation data of the data storage means based on Has been achieved.

Here, the sample to be vapor-deposited is placed on the sample table, and a plurality of window holes for irradiating the sample with infrared light are formed.

The light introducing means introduces the infrared light emitted from the light source into the window hole and irradiates the sample on the sample table.

The light source is provided for each light introducing means, and the light supply amount can be changed individually.

The infrared light control means controls the light supply amount of the infrared light emitted from each light source, for example, the light amount.

The data storage means changes the amount of change in the supply amount of infrared light and the amount of change in the film thickness of the generated thin film, that is, how much the light amount of infrared light changes and how much the film thickness of the thin film changes. Correlation data indicating whether or not is stored, and this correlation data is, for example, a minute region of a thin film to be generated, for example,
It is data showing the correlation between the film thickness of the thin film in the fine region around each window hole and the light supply amount of the light source that supplies infrared light to the window hole through the light introducing means, but it is not limited to this. Without
The point is that at least the amount of change in the infrared light supply and the change in the film thickness of the thin film, which are necessary to obtain the data of the infrared light supply required to produce a thin film with a uniform thickness Any data that includes a correlation with the amount may be used.

Based on the correlation data stored in the data storage means, the control means determines the supply amount of the infrared light quantity for forming the thin film having the intended film thickness, and controls the infrared light control means. Control.

According to the above structure, a thin film for generating correlation data between the change rate of the infrared light supply amount and the change rate of the film thickness with respect to the change rate of the infrared light supply amount in advance based on the correlation database. It is possible to determine the amount of infrared light that is suitable for the film thickness of each of the samples, and to individually control the amount of light that is supplied from the light source that supplies infrared light to the multiple holes in the sample stage. It is possible to easily and easily form a thin film having a uniform thickness.

In this case, for example, as described in claim 2, the control means stores the supply amount of the infrared light at the time of producing the sample, and the film thickness distribution data of the produced thin film is inputted. Then, the correlation data of the data storage means may be updated based on the film thickness distribution data and the stored supply amount of the infrared light.

Here, the generated thin film thickness distribution data may be obtained by directly inputting the measured value to the control means from a predetermined film thickness measuring device or the like for measuring the thin film thickness. It may be input by means such as a keyboard.

The control means stores the amount of infrared light supplied from each light source, which is determined when the thin film is formed, and stores the thin film thickness distribution data (thickness of each minute region) generated by the infrared light. Data) and the amount of infrared light supplied from each light source are accumulated and updated as correlation data.

According to the above configuration, the correlation data can be appropriately accumulated and updated to optimize the correlation data, and the thin film having the intended film thickness can be produced more accurately and easily. .

Further, for example, as described in claim 3, the light introducing means may be an optical fiber.

According to the above construction, the light can be introduced from the light source into the window hole of the sample stand by the optical fiber to irradiate infrared light to a finer fine region of the sample, and the temperature of the sample can be controlled more finely. A more uniform film thickness can be produced.

[0026]

Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

Since the embodiment described below is a preferred embodiment of the present invention, various technically preferable limitations are attached thereto, but the scope of the present invention is particularly limited in the following description. Unless specifically stated to limit the present invention, the present invention is not limited to these embodiments.

1 to 3 are views showing a vapor phase growth apparatus to which an embodiment of the vapor phase growth apparatus of the present invention is applied. In FIG. 1, the vapor phase growth apparatus 1 includes a sample table 2, a plurality of optical cables 3a to 3n, a plurality of light sources 4a to 4n, and a light source 4a to.
A light source control unit 5 and a system control unit 6 for driving and controlling 4n
Although not shown, at least the sample table 2
Are stored in a predetermined closed container.

The sample table 2 is for mounting a sample to be heated, and is formed of, for example, a transparent quartz plate or the like. A large number of window holes 2a to 2n are formed on one surface of the sample table 2 at least in the portion on which the sample is placed. The windows 2a to 2n are formed in an amount suitable for heating the sample on the sample table 2 and at an arrangement position suitable for heating the sample.

The tip ends of optical cables (light introducing means) 3a to 3n are inserted into the window holes 2a to 2n of the sample table 2, and the rear ends of the optical cables 3a to 3n are light sources 4a to 4n.
It is connected to the. Optical fibers are used as the optical cables 3a to 3n, for example.

The light sources 4a to 4n are light sources for emitting infrared light, and the emitted infrared light is respectively transmitted to the optical cables 3a to 4n.
Emit to 3n. Each of the light sources 4a to 4n is connected to the light source control unit 5 and emits infrared light having an intensity (amount of light) corresponding to the signal level of the drive signal input from the light source control unit 5.

The light source control section (infrared light control means) 5 operates on the basis of the drive control signal from the system control section 6 for each light source 4a.
To 4n, a drive signal having a signal level corresponding to the drive control signal is output to control on / off of each of the light sources 4a to 4n and intensity (light amount) of infrared light emitted from each of the light sources 4a to 4n.

The system control unit 6 is constructed, for example, as shown in FIG. 2, and has a light supply amount determination processing unit 11 and RO.
M (Read Only Memory) 12, RAM (Random Access)
Memory) 13, I / F (interface) 14, data memory 15, operation unit 16 and the like. The above-mentioned units are connected by a bus 17, and the system control unit 6
For example, a personal computer or the like can be used.

The light source controller 5 is connected to the I / F 14, and the I / F 14 outputs the drive control signal to the light source controller 5.

The data memory (data storage means) 15 is
For example, it is composed of a hard disk or RAM, etc.
Data for controlling the driving of each of the light sources 4a to 4n via the light source control unit 5 is stored.

That is, in the data memory 15, the amount of change in the light amount of each of the light sources 4a to 4n (the amount of change in the light supply amount) and the amount of change in the film thickness of the thin film generated on the sample table 2 (film thickness change). For example, the correlation data with the amount is stored in a table format, and the correlation data with respect to how much the light amount is changed and how much the film thickness is changed is stored.

In the present embodiment, the correlation data between the light amount change amount and the film thickness change amount is obtained by dividing the thin film formed on the sample of the sample table 2 into a plurality of fine regions. The correlation data between the variation of the film thickness of each region and the variation of the light amount of each of the light sources 4a to 4n is stored in the data memory 15. However, the correlation data is not limited to the above, and for example, It is also possible to store the correlation data between the variation amount of the average film thickness in the substantially central portion of the thin film and the variation amount of the light amount of each of the light sources 4a to 4n.

The operation unit 16 includes various operation keys, a display, and the like. The operation keys of the operation unit 16 allow the film thickness when the sample is actually produced and the light sources 4a to 4a.
A light amount of 4n is input.

The film thickness when a thin film is actually formed is
A film thickness measuring device may be connected to the system control unit 6 and the measurement data of the film thickness measuring device may be directly input to the system control unit 6. Further, the light amounts of the light sources 4a to 4n when the thin film is actually generated may be acquired based on a drive control signal when the system control unit 6 controls the light source control unit 5, or the light source control unit 5 may be obtained. May be obtained by inputting the drive signal level when controlling each of the light sources 4a to 4n to the system control unit 6, or may be input by key operation of the operation unit 16.

The ROM 12 is the light source 4a of the vapor phase growth apparatus 1.
The RAM 13 stores a light supply amount determination processing program for managing and controlling the light supply amount of 4n, a correlation data generation processing program, system data, and the like, and the RAM 13 is used as a work memory.

The light supply amount determination processing section (control means) 11 is
For example, the data memory 15 is configured by a CPU (Central Processing Unit) and the like, and is based on a processing program in the ROM 12, particularly a light supply amount determination processing program.
Of the infrared light supplied from each of the light sources 4a to 4n, that is, the amount of light is determined, and
Drive control signals for a to 4n are generated. The light supply amount determination processing unit 11 outputs the generated drive control signal to the I / F1.
4 to the light source control unit 5, and the light source control unit 5 outputs a drive signal having a signal level corresponding to the drive control signal to each of the light sources 4a to 4n based on the drive control signal. The light supply amount of the light sources 4a to 4n, that is, the light amount is controlled.

The light supply amount determination processing section 11 receives the actual film thickness of the sample and the light quantity of the light sources 4a to 4n at that time from the operation section 16, and based on these data. Correlation data of the light amount change amount and the film thickness change amount is generated, the correlation data is accumulated in the data memory 15, and the correlation data is updated.

Next, the operation of the present embodiment will be described.

When a sample is generated by the vapor phase growth apparatus 1, a compound gas containing a composition element of a thin film is supplied into a closed container in which the sample table 2 is stored, and the sample table 2 is heated by infrared rays. , Vapor phase growth to produce a thin film.

At this time, the system control unit 6 searches the data memory 15 by the light supply amount determination processing unit 11, determines the light amount of each of the light sources 4a to 4n according to the film thickness of the thin film to be generated, and determines the light amount. The drive control signal for each of the light sources 4a to 4n corresponding to the light amount is output to the light source control unit 5 via the I / F 14.

When the drive control signal is input from the system control unit 6, the light source control unit 5 turns on the light sources 4a to 4n and sets the light supply amount of each of the light sources 4a to 4n, that is, the light amount as the drive control signal. The light sources 4a to 4n are controlled based on
To generate infrared light of the light amount.

Infrared light emitted from each of the light sources 4a to 4n is applied to the window holes 2a to 2n formed in the sample table 2 via the optical cables 3a to 3n, and the sample table 2 receives each of the window holes. It is heated by the infrared light applied to 2a to 2n. At this time, since infrared rays are guided by the optical cables 3a to 3n, it is possible to irradiate the infrared light to a fine region of the sample on the sample table 2, and the window holes 2a to 2n and the optical cable 3 are provided.
By providing a large number of a to 3n, the temperature of the sample can be finely controlled. As a result, a thin film having a more uniform film thickness can be produced.

At this time, the infrared light irradiating each of the window holes 2a to 2n of the sample table 2 is controlled by the system controller so that the film thickness of the thin film formed on the sample on the sample table 2 becomes uniform. Since the amount of light is controlled by 6 and the light source controller 5, a thin film having a uniform film thickness is formed on the sample on the sample table 2.

Therefore, it is possible to easily and easily form a thin film having a uniform film thickness while performing control with high productivity.

When a thin film having a predetermined thickness is formed in this way, the above-mentioned light supply amount (light amount) during the formation
Is stored in the RAM 13 or the like, and is used for the correlation data accumulation / update process described below.

That is, when the thin film is generated, the system control unit 6 is set to the correlation data generation processing mode, the film thickness distribution of the generated thin film is measured by a predetermined film thickness measuring device,
The measured film thickness distribution data is input by a key operation of the operation unit 16, or the measurement data of the film thickness measuring device is directly input to the system control unit 6 from the film thickness measuring device.

When the system controller 6 is set to the correlation data generation mode and the film thickness distribution data is input, the film thickness change amount data with respect to the light amount data in which the newly input film thickness distribution data is stored in the RAM 13 is inputted. As a result, the correlation data generation process is performed by accumulating the correlation data in the data memory 15 or updating the correlation data.

In this case, when the correlation data includes other conditions for thin film formation, such as environmental conditions, the correlation data is updated as it is when the film thickness data is input. Instead, data may be newly stored as correlation data including these environmental conditions.

Therefore, the correlation data created based on the experimental data in advance can be updated in the data update mode or new data can be accumulated, and the correlation data can be made more appropriate. As a result, a thin film having an intended film thickness can be produced more accurately.

Although the invention made by the inventor has been specifically described based on the preferred embodiments, the present invention is not limited to the above-described embodiment, and various modifications may be made without departing from the gist of the invention. It goes without saying that it is possible.

For example, in the above embodiment, the light supply amount is controlled based on the correlation data between the light amount change amount and the film thickness change amount, but the correlation data is not limited to these. , For example, environmental conditions, gas components for sample generation, data such as processing time may be included, and by including these data,
It is possible to appropriately generate a sample having an intended film thickness.

[0057]

According to the vapor phase growth apparatus of the first aspect of the present invention, the correlation between the change ratio of the infrared light supply amount and the change ratio of the film thickness with respect to the change ratio of the infrared light supply amount is previously set. Determine the amount of infrared light supply suitable for the thickness of the thin film to be generated based on the data correlation database, and determine the light supply amount of the light source that supplies infrared light to the window holes of the multiple sample stands. It can be controlled individually, and with good productivity, a thin film having a uniform film thickness can be easily and easily produced.

According to the vapor phase growth apparatus of the second aspect of the present invention, the correlation data can be appropriately accumulated and updated to optimize the correlation data, and the thin film having the intended film thickness can be more accurately And it can be easily generated.

According to the vapor phase growth apparatus of the third aspect of the present invention, the optical fiber is introduced from the light source into the window hole of the sample stand to irradiate the infrared light to a finer fine region of the sample, and the sample is further expanded. The temperature can be controlled more finely, and a more uniform film thickness can be generated.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a vapor phase growth apparatus to which an embodiment of the vapor phase growth apparatus of the present invention is applied.

FIG. 2 is a circuit block diagram of a system control unit in FIG.

FIG. 3 is an explanatory diagram of a light supply amount control process and a correlation data generation process by the vapor phase growth apparatus of FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 vapor phase growth apparatus 2 sample stage 2a-2n window hole 3a-3n optical cable 4a-4n light source 5 light source control part 6 system control part 11 light supply amount determination processing part 12 ROM 13 RAM 14 I / F 15 data memory 16 operation part

Claims (3)

[Claims] 1. A sample stand on which a sample to be heated is placed and a plurality of window holes are formed, and a plurality of light sources whose one end is inserted into the window hole and whose other end emits infrared light. A plurality of connected light introduction means, infrared light control means for controlling the supply amount of infrared light of each light source connected to each light introduction means, and a change amount of the supply amount of infrared light Data storage means for storing correlation data with the amount of change in film thickness of the thin film generated on the sample, and searching for correlation data in the data storage means based on the film thickness of the generated thin film, A vapor phase growth apparatus comprising: a control unit that controls the amount of infrared light supplied from each of the light sources by controlling an external light control unit. 2. The control means stores the supply amount of the infrared light at the time of forming the thin film, and when the film thickness distribution data of the generated thin film is input, the film thickness distribution data and the stored film thickness distribution data are stored. The vapor phase growth apparatus according to claim 1, wherein the correlation data in the data storage unit is updated based on the supply amount of the infrared light. 3. The vapor phase growth apparatus according to claim 1 or 2, wherein the light introducing means is an optical fiber.