JPH09106950A - Crystal growth apparatus and crystal processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make it possible to hold a good crystal condition by a method wherein at least one part of the inner wall of a growth chamber, an instrument or an attachment device, which comes into contact with supply raw gas to a device or a reaction product consisting of the raw gas, is at least partially coated with a film, which can prevent the raw gas or the reaction product consisting of the raw gas from adhering. SOLUTION: At least one part of the inner wall of a growth chamber, an instrument or an attachment device, which comes into contact with supply raw gas to a crystal growth device or a crystal process device or a reaction product consisting of the raw gas, is at least partially coated with a film, which can prevent the raw gas or the reaction product consisting of the raw gas from adhering. For example, in an MBE crystal device, a Teflon-coated film 60 is applied on the inner wall 61 of a growth chamber, the film 60 is applied on a quartz glass 63, which is the window of a view port flange 58, and the surface on the interior side of an RHEED screen growth chamber is coated with the film 60. Provided that, the film 60 is not performed on a liquid nitrogen shroud 56 about molecular beam sources 53.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal growth apparatus and a crystal processing apparatus.

[0002]

2. Description of the Related Art When growing a crystal for an electronic device or an optical device on a semiconductor substrate, metal organic chemical vapor deposition (M
OVPE) method or molecular beam epitaxy growth (MBE)
Method is used.

In a metal-organic vapor phase crystal growth apparatus (hereinafter referred to as MOVPE crystal growth apparatus) by MOVPE method, a substrate is placed on a table (susceptor) for holding the substrate installed inside a quartz reaction tube. The substrate is externally heated to a growth temperature by a high-frequency heating method or a resistance heating method and heated to a growth temperature, and a group V source gas such as AsH ₃ or PH ₃ or an organic metal such as triethylgallium or trimethylindium is added to a reaction tube III. A group raw material gas is supplied to epitaxially grow a thin film crystal on the substrate.

In a molecular beam epitaxy crystal growth apparatus by MBE method (hereinafter referred to as MBE crystal growth apparatus), a holder with a substrate attached is carried into an ultrahigh vacuum growth chamber, the holder is heated to a growth temperature, and the crucible is heated. High-purity metallic solid raw materials such as Ga, In, Al or As, P which are heated and melted at
Vapor emitted from a solid raw material such as the above is supplied to the substrate surface by a molecular beam to epitaxially grow a thin film crystal on the substrate.

In crystal growth, control of the substrate temperature is important. In the MBE crystal growth apparatus, the substrate temperature during growth is measured by an optical measurement device such as an infrared radiation thermometer through a viewport (peep window). At that time, if the viewport becomes cloudy due to the adhesion of growth materials such as As or P, the infrared transmission intensity will decrease, making stable and accurate substrate temperature measurement difficult. A shutter is attached so that the shutter can be opened only when measuring the substrate temperature. However, since the substrate temperature is frequently measured, there is a problem that the viewport becomes cloudy due to the deposition of the growth material after the growth of several tens of times.

Also in a crystal processing apparatus such as a dry etching apparatus, a chemical vapor deposition (CVD) apparatus or an electrode vapor deposition apparatus, the problem that the viewport gradually becomes cloudy arises.

As a first conventional example to cope with such a problem, the 1989 Journal of Vacuum
Science Technology B (Journal of Vaccum Scie
nceTechnology B), Volume 7, page 682, "A heating window assembly for a molecular-b".
There is a report entitled "eam epitaxy system"). As shown in FIG. 9, the device reported therein is a quartz plate (As shield plate) having a heating mechanism between the viewport and the shutter.
It is a vacuum flange with a viewport attached. Since the quartz plate is transparent, it does not interfere with the optical measurement, and since the raw material attached to the quartz plate can be re-evaporated by heating the quartz plate, it is possible to perform optical measurement such as substrate temperature measurement for a long period of time.

A second conventional example is Japanese Patent Laid-Open No. 63-11.
4116 discloses an invention named "Molecular beam crystal growth apparatus". The present invention is an MBE crystal growth apparatus in which only a liquid nitrogen shroud is coated with a fluororesin. This is, by coating the liquid nitrogen shroud with a fluorine-based resin, when a large amount of deposits is deposited on the liquid nitrogen shroud, the liquid nitrogen shroud is easily removed by removing the liquid nitrogen shroud from the apparatus. The purpose is to reduce the surface defects and prevent the contamination of the evaporation material by the clean liquid nitrogen shroud obtained by cleaning.

[0009]

In the MOVPE crystal growing apparatus, when the crystal growth is repeated, As and P are formed on the inner wall of the reaction tube, the inner wall of the insertion tube, the outer wall, etc. in addition to the instruments such as the susceptor inside the crystal growing apparatus. And the like, or reaction products of a plurality of types of feed materials adhere and deposit. The adhered substance is detached from the device or the inner wall during crystal growth, adheres to the substrate, and significantly deteriorates the quality of the grown crystal. Further, since the reaction tube becomes cloudy due to the products attached to the reaction tube, it becomes impossible to optically observe the grown crystal by a surface photon absorption (SPA) device or the like.

Therefore, after several tens of crystal growth steps, the instruments or reaction tubes inside the crystal growth apparatus or the insertion tubes are removed, and a large amount of strong acid such as aqua regia is applied to the inner walls of these instruments or reaction tubes or the insertion tubes. Must be used and washed. The work is dangerous, and toxic gases such as AsH ₃ and PH ₃ are generated by the reaction between the deposits such as As and P and the acid. Therefore, it is necessary to work with a dedicated mask. In addition, each time the reaction tube is removed, it is necessary to newly perform crystal growth for confirming reproducibility of crystal growth such as lattice matching and doping conditions, which is troublesome and inefficient.

In the first conventional example of the MBE crystal growth apparatus, the view port is covered with an As shield plate, and the metal wire heater attached to the As shield plate is resistance-heated to generate As.
As and P adhering to the shield plate are re-evaporated. However, there are problems that the viewport becomes narrow and measurement becomes difficult, the heater is cut off, and the device easily leaks due to thermal expansion of the As shield plate. When the heater is turned off, As
Since the device must be exposed to the atmosphere to replace the shield plate, it takes a lot of time to maintain the device.

In the MBE crystal growth apparatus of the second conventional example, only the liquid nitrogen shroud is coated with a fluororesin, and the liquid nitrogen shroud is removed from the apparatus for chemical cleaning. However, in this method, the device must be completely exposed to the atmosphere, and at the time of removal, the P adhering to the inner wall of the device is rubbed, and P ignites and burns,
There is a high risk of damaging the device. Further, the liquid nitrogen shroud around the cell, which is involved in the contamination of the raw material, can be easily outgassed sufficiently by increasing the temperature of the cell. Therefore, it is rare to remove the liquid nitrogen shroud from the equipment and clean it. In addition, after MBE growth, normally, in order to prevent damage to the crucible due to contamination or solidification of the raw material and damage to the cell due to the rise of the raw material from the crucible, the liquid nitrogen shroud is filled with the cell without liquid nitrogen. The temperature of 300 ° C. to 700 ° C. is maintained to maintain the metal raw material in a liquid state. However, if the liquid nitrogen shroud is coated with a fluorine-based resin, the temperature of the liquid nitrogen shroud cannot be raised to 200 ° C. or higher, so that it is difficult to maintain the metal raw material in a liquid state in a normal apparatus.

As described above, it is necessary to prevent the feed material or the reaction product thereof from adhering to the inner wall of the crystal growth apparatus, the observation window, the auxiliary equipment, or the like so that stable and good crystal growth conditions of the crystal growth apparatus can be maintained. This is an important issue to hold.

[0014]

A crystal growth apparatus or a crystal processing apparatus according to the present invention is an apparatus or an auxiliary apparatus which is provided on the inner wall of the apparatus or provided on the inner wall of the apparatus or which communicates with the inner wall of the apparatus. At least a part of an inner wall, an instrument, or an accessory device that comes into contact with a raw material gas or a reaction product of the raw material gas is at least partially covered with a film capable of preventing adhesion of the raw material gas or the reaction product of the raw material gas. Is covered.

The above-mentioned coating may be a Teflon thin film or a fluoropolymer thin film including a fluoropolymer thin film having a sheet-like molecular structure.

The above-mentioned inner wall, device or accessory may be the inner wall of the reaction tube in the metal-organic vapor phase crystal growth apparatus and the inner wall and outer wall of the insertion tube. The metal-organic vapor phase crystal apparatus may be the reaction tube or the inner tube. It may have a temperature control means for controlling the temperature of.

The above-mentioned inner wall, equipment and accessory device may be a peep window of a molecular beam epitaxy crystal growth device or a crystal process device, and further has a wiping means for wiping off substances adhering to the peep window. May be.

The above-mentioned inner wall, instrument and accessory device may be the inner surface of the screen of the observation apparatus using the electron beam of the molecular beam epitaxy crystal growth apparatus, and the wiping off for wiping off the substance adhering to the inner surface of the screen. It may have a means.

The aforementioned inner wall, instrument and accessory may be the inner wall of a turbo molecular pump, rotor blades and fixed blades.

Fluorine atoms have the smallest van der Waals radius next to hydrogen atoms and the highest electronegativity, forming stable compounds with many elements. The outermost shell electron of the fluorine atom is in the 2s and 2p orbits and has a strong interaction with the nucleus and a small polarizability. As a result of these, the C—F bond becomes a covalent bond having features such as a large bond energy, a short bond distance, and a small polarizability. Moreover, since the fluorine atom has three pairs of unpaired electrons in the outermost shell, the fluorine atoms strongly repel each other. The properties of macromolecules, not limited to fluorine-based polymers, are manifested as a result of complex factors that include not only primary structures but also higher-order structures. The same can be said.

PTFE (polytetrafluoroethylene)
The fluoropolymer, which is made of only carbon and fluorine, and whose basic molecular structure is symmetrical, has excellent heat resistance, chemical resistance, and oxidation resistance, and is neutral in potential and has a dielectric constant. Get lower. Since the polarizability of the C—F bond is small,
Generally, a substance containing fluorine has a low refractive index. Since the polarizability of fluorine is small, the intermolecular cohesive force is low, the surface free energy is remarkably low, and it becomes difficult to wet liquids or solids having larger intermolecular cohesion. FIG. 8 shows the molecular model and structural formula of PTFE, and it can be seen that fluorine is densely covered on the surface of carbon. Since the bond distance is small in this way, it is dense and the molecular chain has a helical structure due to the large repulsion between the fluorine atoms. That is, the main chain is twisted, and the F atoms are arranged so as to surround them. Therefore, the PTFE molecule is not easily bent and is rigid. Because of this and the extremely low surface free energy, PTF
The surface of the E-molded product has a property that it is slippery and a substance is hard to adhere thereto. Also, since the C-F bond has a large binding energy,
As a polymer, PTFE has a very high melting point.

Therefore, by covering the inner wall of the growth chamber with the fluoropolymer, the feed material or the reaction product of the feed material is less likely to adhere to the inner wall of the reaction tube, and the inner wall of the growth chamber can be kept clean.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a schematic view of a peripheral portion of a reaction tube of a MOVPE crystal growth apparatus.

The MOVPE crystal growth apparatus shown in FIG.
Substrate exchange chamber 2 for loading the substrate, a vacuum exhaust system 3 for evacuating the substrate exchange chamber 2, a gate valve 4 for partitioning the growth chamber and the substrate exchange chamber 2, and a transfer rod for loading the substrate 1 to the rectangular insertion tube 8. 5, a carbon susceptor 6 for supporting and heating the substrate, a substrate holder 26 made of SiC for fixing the substrate 1 to the carbon susceptor 6, a thermocouple thermometer 28 for measuring the substrate temperature, and cooling water 11 A cylindrical reaction tube 7 that can endure reduced pressure growth, a rectangular insertion tube 8 that is inserted into the cylindrical reaction tube 7 to make the supplied source gas flow 20 a laminar flow, and a high frequency for heating the carbon susceptor 6. A heating coil 9, a susceptor rotation motor 10 for rotating the carbon susceptor 6 together with the transfer rod 5, a group V source gas 14 and a group III source gas 15, which are source gases, and a carrier gas. Hydrogen 16 which is
And a O-ring 22 for sealing the inside of the cylindrical reaction tube 7, and an exhaust system 25 for exhausting the gas introduced into the cylindrical reaction tube 7.

In this apparatus, as shown in enlarged sectional views A and B, a Teflon coat film 18 is provided for preventing the inner wall of the cylindrical reaction tube 7 and the inner and outer walls of the rectangular insertion tube 8 from adhering and contaminating the raw material gas. Which has a temperature control system for controlling the temperature of the rectangular-shaped insertion tube 8 coated with the Teflon-coated film 18, and the cooling nitrogen gas 12 introduced from the cooling nitrogen gas inlet 13 A depressurized MOVPE crystal growth apparatus comprising a susceptor cover 23 for preventing the carbon susceptor 6 from being cooled and for preventing the cooling nitrogen gas 12 from entering the inside of the rectangular insertion tube 8. is there.

As shown in FIG. 2, the temperature control system for the intubation tube includes a thermocouple thermometer 27, a compensating lead wire 30, a temperature indicator 31, a personal computer 32, a valve controller 33, a gas-liquid separator 34 for liquid nitrogen, and With the cooling nitrogen gas introduction valve 38 as a main component, the thermocouple thermometer 27 attached to the rectangular insertion tube 8 measures the temperature of the rectangular insertion tube 8 and displays the measured temperature on the temperature indicator 31. When the measured temperature is read into the personal computer 32, and when the measured temperature is higher than the temperature range set in the personal computer, the valve controller 33 causes the cooling nitrogen gas introduction valve 38 to open, and the cooling nitrogen gas is introduced into the cylindrical reaction tube 7. 12 is introduced, the temperature of the rectangular insertion tube 8 is lowered, and when the measured temperature is lower than the set temperature, the cooling nitrogen gas introduction valve 38 is closed. By the temperature of the inner cannula, the Teflon-coated film is operative to control the temperature range that does not evaporate. The film for preventing the above-mentioned source gas or the reaction product of the source gas from adhering is not limited to the Teflon coat film. Instead of the Teflon coat film, another heat-resistant fluorine-based polymer thin film may be used.

FIG. 3 is a vertical sectional view of the growth chamber of the MBE crystal growth apparatus, and FIG. 4 is a view showing the structure of the growth chamber of FIG. 3 seen from above.

The MBR crystal growth chamber shown in FIGS. 3 and 4 includes a manipulator 5 for supporting a holder to which a substrate 55 is attached.
4. A plurality of molecular beam sources 53 provided with a heater for heating the crucible containing the solid raw material and a thermocouple for measuring the temperature of the solid raw material, and a liquid for cooling the periphery of the heated molecular beam source 53. Nitrogen shroud 56, infrared radiation thermometer 59 for measuring the substrate temperature during growth, viewport flange 58 and viewport shutter flange 57 for looking into the substrate for temperature measurement, for observing the surface condition of the substrate Reflection High Energy Electron Diffraction (RHEED)
RHEED screen 7 for visualizing the intensity distribution of a diffracted wave 76 generated by the electron beam 75 emitted from the device 71 and the RHEED device 71 being reflected and diffracted by the substrate 55.
3, a RHEED screen shutter 72, a viewport 74, and a vacuum pump 52 for evacuating the MBE growth chamber 51 to an ultrahigh vacuum.

This device, as shown in the enlarged view C,
The inner wall 61 of the growth chamber is coated with a Teflon coat film 60, and as shown in the enlarged view D, the viewport flange 58 is formed.
The MBE crystal growth apparatus is characterized in that the quartz glass 63, which is the window, is coated with the Teflon coat film 60, and the surface of the RHEED screen 73 on the inner side of the growth chamber is coated with the Teflon coat film. However, the molecular beam source 53
The surrounding liquid nitrogen shroud 56 is not provided with a Teflon coat film.

FIG. 5 shows the MBE crystal growth apparatus shown in FIGS. 3 and 4, in which the viewport shutter flange 57 is replaced with the wiper flange 107 shown in FIG. That is, as shown in the partially enlarged view of FIG. 5, a wiper for wiping and cleaning the Teflon thin film 110 covering the quartz glass 102, which is made up of the spring-type pressing fitting 111, the set screw 112, the supporting fitting 113, and the heat resistant rubber 114 for ultra-high vacuum. 101 and a rotating shaft rod 105 shown in a side view
A wiper flange 107, which is a vacuum-proof flange having a rotary introducer 106, and a viewport flange 104 in which a quartz glass 102 having a Teflon thin film 110 is sealed in a sealing tray 103 are attached to a flange of an MBE growth chamber 109 by a bolt. It is attached using 108. However, there is a bellows inside the rotation introducing device 106, and like the normal viewport shutter, the rotation movement is introduced into the vacuum device by giving a pestle movement to the rotation shaft from the outside using the bellows. There is.

The wiper flange 107 is the rotary introducer 1.
By rotating the knob of No. 06, the crystal growth raw materials and reaction products weakly attached to the surface of the Teflon thin film 110 coating the quartz glass 102 are wiped off in the wiping range 115 shown in the front view of FIG. You can

Further, in the example of FIG. 5, if a normal viewport shutter flange is inserted between the wiper flange 107 and the main body of the MBE growth chamber 109, this causes contamination of the adherence of the raw material due to crystal growth on the viewport. Can be further reduced.

The above-described treatment on the viewport flange can be applied not only to the MBE crystal growth apparatus but also to all viewport flanges provided in the crystal growth apparatus or the crystal process apparatus. Further, the film for preventing the adhesion and contamination of the raw material is not limited to the Teflon coat film. That is, another fluoropolymer thin film may be used instead of the Teflon coat film.

FIG. 6 shows an installation of the wiper flange 107 shown in FIG. 5 in place of the RHEED screen shutter flange 72 shown in FIG. That is,
As shown in FIG. 6, the wiper flange 214 and the RH
The EED screen flange 213 and the viewport flange 212 are attached to the MBE growth chamber 23 by using bolts 220.
1 is attached to the flange. The wiper flange 214 is, as shown in the partially enlarged view of FIG. 6, a spring type press fitting 211, a set screw 210, a support fitting 209, a wiper 202 composed of ultra-high vacuum / heat resistant rubber 208, a rotary shaft rod 218 and a rotation introduction. It is a vacuum resistant flange composed of a container 219. The RHEED screen flange 213 includes a lead glass 204, a fluorescent material layer 205, and a platinum thin film 206.
And a vacuum resistant flange in which a RHEED screen plate 203 coated with Teflon thin film 207 in order and evenly is fixed with a set screw 216. The viewport flange 212 is a vacuum resistant flange having a quartz glass window.

Further, in the example of FIG. 6, if a normal viewport shutter flange is inserted between the wiper flange 214 and the main body of the MBE growth chamber 231, this can further prevent the contamination of the source gas on the RHEED screen. Can be reduced.

FIG. 7 shows the Teflon thin film applied to a turbo molecular pump which is a vacuum pump used for drawing a crystal growth chamber to an ultrahigh vacuum. That is, as shown in FIG. 7, the inner wall 301 of the turbo molecular pump 300,
The entire surface or a part of the surfaces of the rotary blade 302 and the fixed blade 303 are coated with a Teflon thin film 311, and the MBE crystal growth apparatus or the gas source MBE crystal growth apparatus or the organometallic MB equipped with the turbo molecular pump 300 is provided.
E Applied to crystal growth equipment.

In the above embodiments, a fluorinated pitch film having a sheet-like molecular structure may be used instead of the Teflon film having a thread-like molecular structure, and fluorinated pitch has a difficulty in adhering to Teflon. So it is more effective.

[0039]

EFFECTS OF THE INVENTION The crystallizing apparatus and crystallizing apparatus according to the present invention are provided with a necessary part of the surface such as an inner wall, a peep window, etc., which comes into contact with a raw material gas or a reaction product of the raw material gas supplied to the apparatus.
By covering with a film that can prevent the source gas or reaction products from adhering, such as a Teflon thin film, the function of the observation window etc. can be prevented from deteriorating, and the adhering substances can be separated from the inner wall, equipment, etc. during crystal growth and adhere to the substrate. , Can prevent the quality of the grown crystal from being significantly impaired, and also has the effect of facilitating cleaning to remove deposits, thus improving the growth condition and process condition of the device and maintaining stable for a long period of time. To enable that.

In the MOVPE crystal growing apparatus, the number of times of exchanging the reaction tube and the interpolating tube is greatly reduced, the burden of setting new crystal growth conditions at the time of replacement is eliminated, and the operating rate of the crystal growing apparatus is improved. Work such as cleaning of instruments, reaction tubes and intubation tubes in the growth chamber is also easy and safe. The Teflon thin film is resistant to heat and transparent to light in a wide wavelength range, so it does not interfere with optical observation during growth. For the deposition of a small amount of product, a relatively large amount of inert gas such as nitrogen can be flowed and removed. Alternatively,
Since the Teflon coating has excellent oxidation resistance, P
By flowing an etching gas such as Cl ₃ , the deposit can also be removed by reacting with the gas and evaporating. Also, when unavoidably cleaning the reaction tube, if ultrapure water is used instead of strong acid, the adhered substances can be removed without generating toxic gas. Of course, the Teflon-coated reaction tube can be washed with a strong acid.

In the MBE crystal growth apparatus, the Teflon coat has the effect of preventing the feed material from adhering to the view port or the RHEED screen, but especially the wiper flange and the Teflon-coated viewport flange or the RHEED screen flange. The combination makes it possible to easily remove the deposits, so that the viewport and the RHEED screen can be kept clean for a long time. As a result, accurate measurement of the substrate temperature by the infrared radiation thermometer through the viewport and RHEED
Good observation of the pattern is stably possible. In addition, the labor of replacing the viewport and the RHEED screen and the time required for the maintenance of the vacuum device can be greatly saved, and the operation efficiency of the device is improved.

Further, by using a turbo molecular pump in which the rotary blades and the fixed blades are coated with Teflon, it is possible to prevent the blades from being corroded due to the reaction between the feed material and the blades or the adhesion of the reactants. The effect of protecting the turbo molecular pump from metal source gas and corrosive gas with etching effect is great. Since it is not necessary to install a cold trap for adsorbing a corrosive gas between the growth chamber and the turbo molecular pump, there is also an effect that the exhaust power is increased accordingly. Moreover, there is no need to bake because the raw material does not adhere to the blade. Furthermore, since there is little friction between the gas and the Teflon coating, the load on the motor rotating at high speed is small, and as a result, the life of the turbo molecular pump can be improved and a stable ultra-high vacuum can be maintained for a long period of time. Good crystal growth is possible.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a peripheral portion of a reaction tube of a MOVPE crystal device.

FIG. 2 is a block diagram of a temperature control system for an insertion tube of the MOVPE crystal device of FIG.

FIG. 3 is a vertical sectional view of an MBE crystal growth apparatus growth chamber.

FIG. 4 is a diagram showing a structure seen from above a growth chamber of the MBE crystal growth apparatus of FIG.

FIG. 5 is a view showing a structure of an example in which a viewport flange having a Teflon coating is combined with a wiper flange.

FIG. 6 is a view showing a structure of an example in which a wiper flange is combined with a RHEED screen flange having a Teflon coating.

FIG. 7 is an explanatory diagram of an example in which a Teflon coating is applied to a turbo molecular pump.

FIG. 8 is a diagram showing a molecular model and structural formula of PTFE (polytetrafluoroethylene).

FIG. 9 is a view showing a sky flange with a viewport in a first conventional example.

[Explanation of symbols]

 1 Substrate 2 Substrate exchange chamber 3 Vacuum exhaust system 4 Gate valve 5 Transfer rod 6 Carbon susceptor 7 Cylindrical reaction tube 8 Rectangular insertion tube 9 High frequency heating coil 10 Susceptor rotation motor 11 Cooling water 12 Cooling nitrogen gas 13 Cooling nitrogen gas introduction Port 14 Group V source gas 15 Group III source gas 16 Hydrogen 17 Source gas supply port 18 Teflon coat film 19 Cooling nitrogen gas flow 20 Source gas flow 22 O-ring 23 Susceptor cover 25 Exhaust system 26 SiC substrate holder 27 Thermocouple thermometer 28 Thermocouple Thermometer 30 Compensation Lead Wire 31 Temperature Indicator 32 Personal Computer 33 Valve Controller 34 Gas-Liquid Separator for Liquid Nitrogen 35 High Pressure Shutoff Valve 36 Pressure Regulator Valve 37 Regulator 38 Cooling Nitrogen Gas Introducing Valve 51 MBE Growth Chamber 52 Vacuum Pump 53 Molecular beam source 5 Manipulator 55 Substrate 56 Liquid nitrogen shroud 57 Viewport shutter flange 58 Viewport flange 59 Infrared irradiation thermometer 60 Teflon coat film 61 Growth chamber wall 63 Quartz glass 71 RHEED device 72 RHEED screen shutter 73 RHEED screen flange 74 Viewport 75 Electron beam 76 Diffraction Wave 101 Wiper 102 Quartz Glass 103 Encapsulation Dish 104 Viewport Flange 105 Rotating Axis Rod 106 Rotation Introducer 107 Wiper Flange 108 Bolt 109 MBE Growth Chamber 110 Teflon Thin Film 111 Spring Holding Metal Fitting 112 Set Screw 113 Supporting Metal Fitting 114 Ultra High Vacuum Heat resistant rubber 115 Wiping range 202 Wiper 203 RHEED screen plate 204 Lead glass 205 Fluorescent substance layer 06 Platinum thin film 207 Teflon thin film 208 Ultra-high vacuum heat-resistant rubber 209 Support metal fittings 210 Set screw 211 Spring type press fitting 212 Viewport flange 213 RHEED screen flange 214 Wiper flange 215 Quartz glass window 216 Set screw 217 Spring type press fitting 218 Rotating shaft Rod 219 Rotation introducer 220 Volt 230 Electron diffraction wave 231 MBE growth chamber 300 Turbo molecular pump 301 Inner wall 302 Rotor blade 303 Fixed blade 304 Growth chamber 305 Inlet port 306 Exhaust port 307 Drive mechanism 311 Teflon thin film 312 Gas 313 Intake side 314 Exhaust Side 401 Quartz plate (As shield plate) 402 Rotation introduction terminal 403 Shutter 404 Flange 405 Tungsten wire 406 Current introduction terminal 407 Viewport

Claims (9)

[Claims] 1. A crystal growth apparatus or a crystal processing apparatus, which is an instrument or an accessory device provided on or connected to the inner wall of the apparatus in addition to the inner wall of the apparatus,
At least a part of an inner wall, an instrument or an auxiliary device which comes into contact with a raw material gas supplied to the apparatus or a reaction product of the raw material gas,
A crystal growth apparatus or a crystal processing apparatus, which is at least partially covered with a film capable of preventing adhesion of a source gas or a reaction product of the source gas. 2. The crystal growth apparatus or the crystal process apparatus according to claim 1, wherein the coating film is a Teflon thin film or a fluoropolymer thin film including a fluoropolymer thin film having a sheet-like molecular structure. 3. The crystal growth apparatus or crystal processing apparatus according to claim 1, wherein the inner wall, the instrument or the accessory is an inner wall of a reaction tube of the metalorganic vapor phase crystal growth apparatus and an inner wall and an outer wall of the insertion tube. 4. The crystal growth apparatus or crystal process apparatus according to claim 3, further comprising temperature control means for controlling the temperature of the reaction tube or the insertion tube. 5. The crystal growing apparatus or crystal processing apparatus according to claim 1, wherein the inner wall, the instrument or the auxiliary apparatus is a viewing window of the molecular beam epitaxy crystal growing apparatus or the crystal processing apparatus. 6. The crystal growth apparatus or crystal process apparatus according to claim 5, further comprising a wiping means for wiping off a substance adhering to the observation window. 7. The crystal growth apparatus or crystal processing apparatus according to claim 1, wherein the inner wall, the instrument or the accessory is an inner surface of a screen of an observation apparatus using an electron beam of a molecular beam epitaxy crystal growth apparatus. 8. The crystal growth apparatus or the crystal processing apparatus according to claim 7, further comprising a wiping means for wiping off a substance attached to the inner surface of the screen. 9. The inner wall, instrument or accessory is an inner wall of a turbo molecular pump, a rotary blade and a fixed blade.
Alternatively, the crystal growth apparatus or the crystal processing apparatus according to 2.