JPH0886789A - Integrated spm sensor and its manufacture - Google Patents

Abstract

PURPOSE: To provide an integrated SPM sensor capable of SNOM(near-field microscope) measurements using constitution similar to that of an AFM(atomic force microscope) and a method for manufacturing the same. CONSTITUTION: A lever structure portion 3 is formed on a lever support 1a via a silicon oxide separation layer 2. and a probe portion 6 is formed at the free end of the lever structure portion 3 to constitute a cantilever portion 17. A P layer 9 constituting a photodiode is formed on the probe portion 6 and on a nearby surface in such a way that it is not formed at the end of the probe portion 6 and that it gets thinner from the bottom to the top of the probe portion 6. Also, a P+ layer 10 is formed in contact with the P layer 9 and also with the surface of the lever structure portion 3, and an N+ layer 11 is formed on the surface part of the lever structure portion 3 and away from the P+ layer 10, and electrode portions 14, 15 are connected, respectively, to the P+ layer 10 and the N+ layer 11 via contact holes 12, 13, to constitute an integrated SPM (scanning probe microscope) sensor.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated SPM sensor having a light detecting mechanism in a probe and a method for manufacturing the same.

[0002]

2. Description of the Related Art Since the late 1980's, an optical microscope having a resolution exceeding the diffraction limit by using an evanescent wave has been proposed. This microscope is a near field microscope (SNOM: Scanning near field optical micros).
cope) is called. This SNOM utilizes the characteristic that the evanescent wave is localized in a region having a size smaller than the wavelength and does not propagate in free space.

The principle of SNOM measurement is as follows. First, the probe is brought close to the surface of the sample to be measured to a distance of about one wavelength or less, and a map of the light intensity passing through the minute aperture at the tip of the probe is prepared to measure the sample to be measured. The resolution is achieved. Several methods have been proposed as SNOM, but two methods are roughly classified. One of them is called the collection method, and when light is irradiated from below the sample, the evanescent wave that penetrates the sample and is localized in the vicinity of the sample surface is detected through a probe and the SN
This is a method of using an OM image. The other method is a so-called emission method in which light is emitted to a sample from a probe having a minute aperture, and light transmitted through the sample is detected by a photodetector installed under the sample. . This method is disclosed, for example, in Japanese Patent Laid-Open No. 4-291310 (A).
T &T; RE Betzig).

Next, an outline of a general SNOM device will be described. The measurement sample is placed on a prism that is placed upside down on a three-dimensional moving stage, and semiconductor laser light is made incident on the surface of the prism on which the measurement sample is placed at an angle that satisfies the condition of total reflection. As a result, evanescent light is generated near the surface of the measurement sample. At this time, when an optical fiber probe with a sharpened tip is brought close to the surface of the measurement sample, the evanescent light is converted into scattered light. The scattered light is guided to a photodetector via an optical fiber probe, and a change in scattered light intensity is detected. The change in scattered light intensity detected by the photodetector is converted into a corresponding scattered light intensity signal and output to the Z position control mechanism. The Z position control mechanism calculates the 3 based on the scattered light intensity signal.
The dimension moving stage is controlled to move in the Z direction to fix the measurement sample and the tip of the optical fiber probe at substantially the same position. In such a state, the microcomputer is X / Y
The X / Y movement control of the three-dimensional movement stage is performed via the scanning position. As a result, the optical fiber probe is XY scanned relative to the measurement sample. At this time, the evanescent light generated near the surface of the measurement sample is converted into scattered light by the optical fiber probe. This scattered light is converted into an electric signal with respect to the light intensity by a photodetector, and then image processing such as noise and background removal is performed, and is displayed as an SNOM image.

Meanwhile, a scanning tunneling microscope (STM; Scanning Tunneling Mic) invented by Binnig and Rohrer et al.
Atomic Force Microscopy (AFM) is a microscope that can observe an insulating sample that has been difficult to measure with STM with atomic order accuracy while using elemental technology including servo technology in roscope).
ope) has been proposed (Japanese Patent Laid-Open No. 62-130302).
Issue: IBM, G.I. Binich, method and apparatus for forming an image of a sample surface).

The structure of this AFM is similar to that of the STM, and is positioned as one of the scanning probe microscopes (SPM). In the AFM, a cantilever having a sharp protruding portion (probe portion) at its free end is made to face or approach a sample, and the cantilever that is displaced by the interaction force acting between the atom at the tip of the probe portion and the sample atom is moved. The sample is scanned in the XY directions while measuring the movement electrically or optically.
By relatively changing the positional relationship between the cantilever and the probe portion, it is possible to three-dimensionally capture the unevenness information of the sample and the like.

In this AFM, the displacement measuring sensor for measuring the displacement of the cantilever is generally provided separately from the cantilever. However, recently, an integrated AF with a function that can measure displacement on the cantilever itself has been added.
An M sensor has been proposed by M. Tortonese et al. This integrated AFM sensor is, for example, M. Tortonese, H. Yamad
a, RCBarrett and CFQuate's paper “Atomic force
microscopy using a piezoresistive cantilever ”(T
ransducers and Sensors '91) and PCT application WO9
2/12398.

[0008]

The integrated AFM sensor proposed by M. Tortonese et al. Mentioned above is a sensor in which a strain sensor is integrated in a cantilever. Integrating on top is easy to think of. However, if a sensor with a light detection function, such as a photodiode, is simply integrated, the photo carriers generated by light irradiation in the photodiode may be recombined with carriers in the semiconductor or trapped in a trap. , Does not contribute as a carrier for photocurrent, and the detection efficiency is reduced. Therefore, when detecting light that is weak such as evanescent light and that exists only near the surface of the measurement sample, the light does not reach the depletion layer, and the photocarriers generated recombine in the semiconductor immediately. Is very low.

Further, in the SNOM using the conventional optical fiber probe, a sensor must be provided in addition to the probe, and the size of the device becomes large. Along with that, it is easy to be affected by external vibration and not easy to manufacture. Further, since the probe and the light detection mechanism are separated from each other, light is lost between them, resulting in poor light detection efficiency and poor sensitivity. Furthermore, since the device configuration is completely different from other SPM devices, especially AFM devices, the user is forced to purchase a dedicated SNOM device in addition to the AFM device, which imposes a heavy burden on the user.

The present invention has been made to solve the above-mentioned problems in the conventional integrated AFM sensor or SNOM, and the integrated SPM sensor capable of SNOM measurement by the structure similar to that of the conventional SPM, especially AFM. And its manufacturing method.

[0011]

In order to solve the above problems, the present invention provides a cantilever portion having a probe portion at its free end, a support portion for supporting the base end of the cantilever portion, and the above-mentioned probe. Integrated SP with the light detection mechanism provided on the needle
This constitutes an M sensor.

When the probe portion of the integrated SPM sensor thus constructed is brought into contact with the evanescent light generated near the surface of the measurement sample, the evanescent light is detected by the light detection mechanism provided in the probe portion. The evanescent light is converted into a light intensity signal, and SNOM measurement is performed by outputting the surface information of the measurement sample based on this signal. Since the probe unit and the light detection mechanism are integrated, the probe unit and the light detection mechanism can be brought close to each other to the utmost limit, and high-sensitivity SNOM measurement that suppresses loss during light propagation becomes possible.

Further, the photodetection mechanism is composed of a photodiode, and the depletion layer at the PN junction of the photodiode is formed up to the tip of the probe, so that the high concentration doping at the tip of the probe is achieved. The probability of recombination of photocarriers in the layer can be reduced, and weak light such as evanescent light can be detected with high sensitivity.

In the method of manufacturing the integrated SPM sensor according to the present invention, an oxide film is formed thick on the surfaces of the cantilever portion and the probe portion, and ion implantation is performed in a direction perpendicular to the surface of the cantilever portion. P-type (N-type) that constitutes a photodiode on the surface of the probe part and its vicinity
After using the step of forming a layer or forming a P-type (N-type) layer constituting a photodiode on the entire surface of the probe part,
A step of oxidizing the surface of the probe portion to remove the P-type (N-type) layer at the tip of the probe portion is used, or a probe forming mask is formed on the cantilever portion to form the probe portion by etching, and then the probe portion is formed. Using the probe forming mask as an ion implantation mask, while rotating the cantilever, perform ion implantation toward the probe in an oblique direction to the surface of the cantilever, and remove the tip except the tip. A P-type (N
(Type) layer is formed, or a mask for preventing formation of a P-type (N-type) layer forming a photodiode is provided at the tip of the probe portion formed on the cantilever portion, and ion implantation is performed. This method uses a step of forming a P-type (N-type) layer on the surface of the probe portion except the tip portion.

By manufacturing using such a process, the P-type (N-type) layer constituting the photodiode is not formed at the tip of the probe portion, and the depletion layer is formed up to the tip of the probe portion. It is possible to easily obtain an integrated SPM sensor in which the photodiode of (1) is integrated in the probe portion.

[0016]

EXAMPLES Next, examples will be described. First, a manufacturing method of an integrated SPM sensor and a manufacturing method thereof according to a first embodiment of the present invention will be described with reference to FIGS. In addition, in the present embodiment, a case of forming using an N-type substrate will be described. First, as shown in FIG.
A silicon wafer 1 provided with a lever structure portion 3 of an N-type silicon layer on a surface of a silicon oxide via a separation layer 2 of silicon oxide,
For example, a bonded wafer is prepared, and a silicon oxide film 4 is formed on the back surface of the silicon wafer 1 and the front surface of the lever structure portion 3.

Next, as shown in FIG. 1 (B), a silicon for forming a cantilever support portion by removing the lower part of the cantilever in the oxide film 4 on the back surface of the silicon wafer 1 to remove the lower part of the cantilever. An opening 5 for etching the wafer 1 is provided. Then, after patterning the lever structure 3 into a cantilever plane shape as shown in FIG. 2, a probe forming mask (not shown) is provided to form the probe 6 by etching, and then the lever structure 3 and the probe are formed. An oxide film 7 is formed on the surface of the needle portion 6. The thickness of the oxide film 7 is set to be a thickness that is optimally doped on the surface of the lever structure 3 in consideration of the acceleration voltage of the material to be doped in the ion implantation. Next, a resist is applied to the surface, a mask 8 for ion implantation is formed, and a P layer 9 is formed on the probe portion 6 and the surface in the vicinity thereof by ion implantation of boron.
At this time, the ion implantation is performed perpendicularly to the lever structure 3 (see FIG. 3). In this way, when the ion implantation is performed perpendicularly to the lever structure portion 3, the distance from the surface of the oxide film 7 to the surface of the probe portion 6 is equal to the distance at the tip of the probe portion 6. ，
If the distance in the middle is b and the distance in the skirt is c, then a>b> c. Therefore, the P layer 9 is not formed at the tip of the probe 6 and the apex from the hem of the probe 6 is formed. It becomes thinner as it goes to.

Next, as shown in FIG. 1C, after the mask 8 for ion implantation is removed, the lever structure is formed on the portion of the probe portion 6 where the P layer 9 is formed on the lever supporting portion side. a P ⁺ layer 10 in contact with the surface of the body portion 3, the P ⁺
Lever structure part 3 slightly separated from layer 10 to the lever support side
An N ⁺ layer 11 is formed on the surface of the N ⁺ layer, and contact holes 12 and 13 are formed in the oxide film 7 on the P ⁺ layer 10 and the N ⁺ layer 11. After that, P through the contact holes 12 and 13
^The electrode portions 14 and 15 connected to the ⁺ layer 10 and the N ⁺ layer 11 are patterned by sputtering aluminum, for example, to have the surface shape shown in FIG. 2, and then the oxide film 7 only on the probe portion 6 is removed. After removal, a surface protective film 16 made of, for example, polyimide is formed on the surface to protect the surface during back surface etching.

Next, as shown in FIG. 1D, the silicon wafer 1 is separated by wet anisotropic etching using the partially removed oxide film 4 formed on the back surface as a mask. The layer 2 is etched to form the lever supporting portion 1a. Finally, in order to free the cantilever portion 17, a part of the silicon oxide separation layer 2 is removed with hydrofluoric acid,
The integrated SPM sensor is completed by removing the surface protective film 16.

As another method for preventing the P layer 9 from being formed at the tip of the probe portion 6, there is a method of removing the P layer at the tip of the probe by oxidation after ion implantation of boron. That is, as shown in FIG.
When boron is ion-implanted, the oxide film 7 formed on the surface of the probe portion 6 is thinly formed and ion-implantation is performed to form the P layer 9, and then, as shown in FIG.
As shown in, the oxide film 18 is formed by oxidizing the surface, for example, thermal oxidation. As a result, silicon on the surface of the probe portion 6 changes to the oxide film 18, and the P layer 9 at the tip of the probe portion 6 also changes to the oxide film 18. Then, by removing the oxide film 18 with hydrofluoric acid, a structure similar to that obtained in the manufacture of the first embodiment can be obtained.

Next, the structure and usage of the integrated SPM sensor obtained by the manufacturing method of the first embodiment will be described with reference to FIGS. 1 (D) and 2. A lever structure part 3 is formed on a lever support part 1a made of a silicon wafer with a silicon oxide separation layer 2 interposed therebetween. A probe part 6 is formed on the free end side of the lever structure part 3, and a cantilever part is formed. Make up 17 A P layer 9 is formed on the surface of the probe portion 6 and its vicinity. This P layer 9
Is not formed at the tip of the probe portion 6, but is formed thinner from the hem portion of the probe portion 6 toward the apex. This is because only the local light is captured, and by making only the tip portion thin and making the hem portion thick, the light at the tip portion easily reaches the depletion layer. Further, the P ⁺ layer 10 is formed in contact with the P layer 9 and also in contact with the surface of the lever structure portion 3, and the N ⁺ layer 11 is also formed.
Is a portion slightly separated from the P ⁺ layer 10 toward the lever supporting portion 1a side,
For example, it is formed on the surface portion of the lever structure portion 3 separated by about 10 μm. Then, the probe portion 6, the P ⁺ layer 10 and the N ⁺
An oxide film 7 is formed on the surface and side surfaces of the lever structure 3 except for the contact holes 12 and 13 for the layer 11. In addition, the contact hole 1 is formed in the P ⁺ layer 10 and the N ⁺ layer 11.
Electrode portions 14 and 15 are connected via 2 and 13, respectively. In the integrated SPM sensor thus configured, as shown in FIG. 2, the electrode part 14 is connected to the DC constant voltage power source 19 for applying a reverse voltage to the PN junction part, and the electrode part 15 is connected. The current detection circuit 20 is connected and used.

Next, the operation will be described. A current detection circuit 20 is connected to one electrode portion 15 of the integrated SPM sensor configured as described above, the circuit 20 is grounded, for example, and the other electrode portion 14 has a DC constant voltage power supply 19 Are connected and, for example, -3 V is applied to operate. In such an operating state, the depletion layer expands at the junction between the P layer 9 and the lever structure 3 made of the N-type silicon layer in the probe portion 6, and becomes a depletion layer up to the tip of the probe portion 6. When light is directly incident on the depletion layer at the tip of the probe portion 6, a large amount of carriers that contribute as photocurrent carriers are generated in the photodiode including the P layer 9 and the lever structure portion (N type silicon layer) 3. The current flowing through the photodiode also increases. Since this current changes according to the intensity of light, the SNO is detected by detecting this change in the current detection circuit 20.
An M signal can be obtained.

In this embodiment, the P layer 9 is connected to the probe portion 6
Since it was formed on the surface of the probe part excluding the tip and its vicinity,
A depletion layer is formed up to the tip of the probe portion, and light is directly incident on the depletion layer. As a result, the amount of carriers that contribute as photocurrent carriers is increased and the sensitivity is improved. In addition, by integrating a photodiode (light detection mechanism) in the cantilever portion itself, the device can be downsized, and accordingly, the device can be simplified and manufactured easily and the influence of vibration or the like can be reduced. Furthermore, by integrating the photodiode in the probe portion, the distance between the probe portion (probe) and the photodetector portion is shortened, the optical loss between them is reduced, and the sensitivity can be improved. Also, other SPM devices,
In particular, the AFM device is provided with a light source for generating evanescent light, and the probe can be replaced with that of the present embodiment.
NOM measurement is possible, and S can be performed separately from the AFM measurement device.
It is not necessary to prepare a NOM measuring device, and the burden on the user is reduced. In this embodiment, the P layer and N
The layers, the P ⁺ layer, and the N ⁺ layer may be formed in reverse, and in this case, the polarities of the applied bias are reversed.

Next, a second embodiment will be described. First, the main part of the manufacturing method will be described with reference to FIGS. 6 and 7. Since the manufacturing method of this embodiment is different from the manufacturing method of the first embodiment only in the method of ion implantation of boron, only the steps relating to ion implantation will be described here, and the other steps will not be described. Omit it. In this embodiment, similarly to the first embodiment, as shown in FIG. 6, a probe forming mask 21 is provided to form the probe 6 on the lever structure 3 and then the probe is formed. The mask 21 is left as it is, and a thin oxide film 7 is formed on the surface of the lever structure 3 and the surface of the probe 6. Next, using the probe forming mask 21 as a mask for ion implantation, boron ion implantation is performed obliquely with respect to the surface of the lever structure 3 to rotate the entire silicon wafer. As a result, as shown in FIG. 7, the P layer 9 is not formed at the tip of the probe portion 6 but is formed from the middle of the probe portion 6 toward the bottom. Then, the probe forming mask 21 is removed, and the integrated SPM sensor having the same configuration as that of the first embodiment is obtained by the subsequent steps similar to those of the first embodiment.

The structure of the integrated SPM sensor manufactured in this way is the same as that of the first embodiment as described above, and the description thereof is omitted, but the effects are the same as those of the first embodiment. In addition, the thickness of the P layer can be controlled directly by ion implantation, and P from the tip of the probe can be controlled.
The distance to the layer can be easily controlled only by changing the tilt angle for ion implantation, so that an appropriate depletion layer can be formed at the tip of the probe, and further improvement in sensitivity can be achieved.

Next, a third embodiment will be described. First, the main part of the manufacturing method will be described with reference to FIG. Since the manufacturing method of this embodiment is different from the manufacturing method of the first embodiment only in the method of ion implantation of boron, only the steps relating to ion implantation will be described here, and the other steps will not be described. Omit it. In this embodiment, similar to the first embodiment,
After forming the probe portion 6 on the lever structure portion 3, a thin oxide film 7 is formed on the surface of the lever structure portion 3 and the surface of the probe portion 6. Next, a resist is applied thereon, and as shown in FIG. 8, a mask 31 for ion implantation is formed so as to cover only the tip portion of the probe portion 6, and ion implantation of boron is performed by the lever structure. Perform perpendicular to the body part 3. As a result, the P layer 9 is not formed at the tip of the probe portion 6 but is formed from the middle of the probe portion 6 toward the hem. After that, the ion implantation mask 31 is removed, and thereafter, an integrated SPM sensor having the same configuration as that of the first embodiment is obtained by the same steps as those of the first embodiment.

The structure of the integrated SPM sensor manufactured as described above is the same as that of the first embodiment as described above, and the description thereof will be omitted. However, regarding the effect, the same effect as that of the first embodiment is obtained. In addition, the thickness of the P layer can be controlled directly by ion implantation, and P from the tip of the probe can be controlled.
Since the distance to the layer can be easily controlled only by changing the size of the ion implantation mask, an appropriate depletion layer can be formed at the tip of the probe, and the sensitivity can be further improved.

Next, the structure and manufacturing method of the fourth embodiment will be described.
Description will be made based on FIG. 9 showing the front surface of the completed integrated SPM sensor and FIG. 10 showing its cross section. The manufacturing method of this embodiment is almost the same as the manufacturing method of the first embodiment. The difference is that the lever structure portion 3 has a lever structure as shown in FIG.
When patterning into a cantilever plane shape as a book and performing ion implantation of boron, a piezoresistive layer 41 is simultaneously formed near the surface of the lever at the center of the lever structure portion 3 as shown in FIG. An insulating layer, for example, a silicon oxide film 42 is formed between the lever structure part where the diode is formed and the lever structure part where the piezoresistive layer 41 is formed, and the contact hole 43 is formed in the piezoresistive layer 41. , 44 through electrode parts 45, 46, respectively
Is the point where the connection is formed. Therefore, the difference from the first embodiment in the configuration is that the cantilever portion 17 is formed by three levers, the piezoresistive layer 41 is provided in the central lever and the silicon oxide film 42 is provided, and the piezoresistive layer 41 is provided. The point is that the electrode portions 45 and 46 are connected and arranged.

Next, the usage mode and operation of the integrated SPM sensor obtained by the manufacturing method of the fourth embodiment will be described. When using this integrated SPM sensor, the electrode part 45
Is connected to a DC constant voltage power supply 47 for applying a voltage to the piezoresistive layer 41, and a current detection circuit 48 is connected to the electrode portion 46. Then, for example, -3V is applied to the electrode portion 45, and the electrode portion 46 is set to -0.5V. As a result, when the cantilever portion 17 is deformed, the resistance value of the piezoresistive layer 41 changes, and the current value also changes. An AFM signal can be obtained by detecting the change in the current value by the current detection circuit 48.

As described above, the integrated type S according to this embodiment is
In the PM sensor, in addition to the effect of the integrated SPM sensor of the first embodiment, since the piezoresistive layer serving as the AFM sensor is incorporated, AFM measurement can be performed, and AFM and SN can be measured.
Simultaneous measurement of OM is also possible.

In this embodiment, the AFM sensor composed of the piezoresistive layer is integrated in the cantilever portion. However, instead of providing the piezoresistive layer, a reflective film is provided on the back surface of the cantilever portion and light is applied. The AFM measurement may be performed by an optical method of measuring the warp of the cantilever portion.

In this embodiment, three cantilever levers are provided. However, the lever structure having the piezoresistive layer is provided with the photodetector (photodiode). The number of levers may be any number as long as it is electrically insulated from the lever structure part.

Further, when the lever structure portion and the piezoresistive layer are reverse biased, between the lever structure portion where the photodiode is formed and the lever structure portion where the piezoresistive layer is formed. The silicon oxide film formed in 1. is not always necessary.

[0034]

As described above on the basis of the embodiments,
Since the integrated SPM sensor according to the present invention is provided with the light detection mechanism in the probe portion, the distance between the probe portion and the light detection mechanism can be made extremely short, and the loss of light between them can be suppressed and high sensitivity can be achieved. SNOM measurement can be performed. Further, the photodetection mechanism is composed of a photodiode, and the depletion layer at the PN junction of the photodiode is formed up to the tip of the probe portion, whereby the sensitivity can be further improved. In addition, AF for piezoresistive elements and reflective films
The M measurement function can be easily incorporated, which allows A
It is possible to perform FM measurement and SNOM measurement at the same time.

Further, according to the method of manufacturing the integrated SPM sensor of the present invention, the P-type (N-type) layer forming the photodiode is not formed at the tip of the probe, but the depletion layer is formed at the tip of the probe. It is possible to easily manufacture the integrated SPM sensor appropriately formed in the above.

[Brief description of drawings]

FIG. 1 is a manufacturing process diagram for explaining a manufacturing method of a first embodiment of an integrated SPM sensor according to the present invention.

FIG. 2 is a diagram showing a configuration of an integrated SPM sensor manufactured by the manufacturing method shown in FIG. 1 and a connection mode of operating circuits.

FIG. 3 is a diagram showing an aspect of boron ion implantation in the manufacturing method shown in FIG.

FIG. 4 is a diagram showing a manufacturing process of a modification of the manufacturing method of the first embodiment.

FIG. 5 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 4;

FIG. 6 is a diagram showing a main part of a manufacturing process of a manufacturing method according to a second embodiment.

FIG. 7 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 6;

FIG. 8 is a diagram showing a main part of a manufacturing process of a manufacturing method according to a third embodiment.

9A and 9B are a front view of a fourth embodiment and a diagram showing a connection mode of an operation circuit.

FIG. 10 is a diagram showing a cross section of a fourth embodiment.

[Explanation of symbols]

1 Silicon Wafer 1a Cantilever Support Part 2 Silicon Oxide Separation Layer 3 Lever Structure Part 4 Oxide Film 5 Opening 6 Probe Part 7 Oxide Film 8 Mask 9 P Layer 10 P ⁺ Layer 11 N ⁺ Layer 12, 13 Contact Hole 14, 15 Electrode part 16 Surface protection film 17 Cantilever part 18 Oxide film 19 DC constant voltage power supply 20 Current detection circuit 21 Probe formation mask 31 Ion implantation mask 41 Piezoresistive layer 42 Silicon oxide film 43, 44 Contact hole 45, 46 Electrode part 47 DC constant voltage power supply 48 Current detection circuit

Claims (11)

[Claims] 1. A cantilever portion having a probe portion at a free end, a support portion for supporting a base end of the cantilever portion, and a light detection mechanism provided on the probe portion. Integrated SPM sensor. 2. The integrated SPM according to claim 1, wherein the probe part is formed of a semiconductor member, and the photodetection mechanism is composed of a semiconductor photosensor integrated in the probe part. Sensor. 3. The integrated semiconductor photosensor is composed of a photodiode, and the PN of the photodiode.
The integrated SPM sensor according to claim 2, wherein the depletion layer at the junction is formed up to the tip of the probe. 4. The photodiode is composed of an N-type (P-type) substrate forming a probe portion and a P-type (N-type) layer formed on the surface of the probe portion, and the P-type (N-type) The integrated SPM sensor according to claim 3, wherein the (type) layer is formed thinner from the hem portion of the probe portion toward the tip. 5. The integrated SPM sensor according to claim 4, wherein the P-type (N-type) layer is not formed on the surface of the tip portion of the probe portion. 6. A cantilever portion having a probe portion at its free end, a support portion for supporting a base end of the cantilever portion, a photodetection mechanism provided on the probe portion, and a cantilever portion integrated with the light detection mechanism. An integrated SPM sensor having a piezoresistive element and also having an AFM measurement function. 7. A cantilever portion having a probe portion at its free end, a support portion for supporting the base end of the cantilever portion, a light detection mechanism provided on the probe portion, and a back surface of the cantilever portion. An integrated SPM sensor having a reflective film and having an AFM measurement function. 8. An integrated SPM sensor having a cantilever portion having a probe portion at its free end, a support portion for supporting the base end of the cantilever portion, and a photodiode integrated with the probe portion. In the manufacturing method of 1., a thick oxide film is formed on the surface of the cantilever portion and the probe portion, ion implantation is performed in a direction perpendicular to the surface of the cantilever portion, and a photodiode is formed on the surface of the probe portion and its vicinity. And a step of forming a P-type (N-type) layer for forming the integrated SPM sensor. 9. An integrated SPM sensor having a cantilever part having a probe part at its free end, a support part for supporting the base end of the cantilever part, and a photodiode integrated with the probe part. In the manufacturing method of 1., after forming a P-type (N-type) layer forming a photodiode on the entire surface of the probe part, the surface of the probe part is oxidized to form a P-type (N-type) at the tip of the probe part
Integrated SPM including a step of removing a layer
Sensor manufacturing method. 10. An integrated SPM sensor having a cantilever part having a probe part at its free end, a support part for supporting the base end of the cantilever part, and a photodiode integrated with the probe part. In the manufacturing method of 1., a probe forming mask is formed on the cantilever portion, the probe portion is formed by etching, and then the probe forming mask is used as a mask for ion implantation, and the cantilever portion is rotated while rotating. Ion implantation toward the probe portion in an oblique direction with respect to the surface of, and forming a P-type (N-type) layer constituting a photodiode on the surface of the probe portion except the tip portion. A method for manufacturing a featured integrated SPM sensor. 11. An integrated SPM sensor having a cantilever part having a probe part at its free end, a support part for supporting the base end of the cantilever part, and a photodiode integrated with the probe part. In the manufacturing method of 1., a mask for preventing formation of a P-type (N-type) layer forming a photodiode is provided at the tip of the probe formed on the cantilever, and the tip is removed from the surface of the probe by ion implantation. And a step of forming a P-type (N-type) layer.