JPH088446B2 - Microstrip antenna - Google Patents
Microstrip antennaInfo
- Publication number
- JPH088446B2 JPH088446B2 JP1217133A JP21713389A JPH088446B2 JP H088446 B2 JPH088446 B2 JP H088446B2 JP 1217133 A JP1217133 A JP 1217133A JP 21713389 A JP21713389 A JP 21713389A JP H088446 B2 JPH088446 B2 JP H088446B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- microstrip antenna
- radiation conductor
- protrusion
- notch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、送受信周波数を調整可能なマイクロストリ
ップアンテナに関する。TECHNICAL FIELD The present invention relates to a microstrip antenna capable of adjusting a transmission / reception frequency.
［従来の技術］ 第７図は従来の直線偏波マイクロストリップアンテナ
の平面図である。[Prior Art] FIG. 7 is a plan view of a conventional linearly polarized microstrip antenna.
第７図の直線偏波マイクロストリップアンテナにおい
て、下表面に接地導体（図示せず。）が形成された正方
形状の誘電体基板10の上表面の中央部に、誘電体基板10
の一辺よりも十分に短い直径Ｒを有する円形状の放射導
体11が形成され、該放射導体11の中心Ｏから径方向にず
れた位置Ｐに、例えば同軸ケーブルを介して給電され
る。この直線偏波マイクロストリップアンテナの共振周
波数は、一般に誘電体基板10の比誘電率と厚さ、並びに
放射導体11の直径Ｒにより一義的に決定される。In the linearly polarized microstrip antenna shown in FIG. 7, the dielectric substrate 10 is provided at the center of the upper surface of a square-shaped dielectric substrate 10 having a ground conductor (not shown) formed on the lower surface.
A circular radiation conductor 11 having a diameter R sufficiently shorter than one side is formed, and power is fed to a position P radially displaced from the center O of the radiation conductor 11 via, for example, a coaxial cable. The resonance frequency of this linearly polarized microstrip antenna is generally uniquely determined by the relative permittivity and thickness of the dielectric substrate 10 and the diameter R of the radiation conductor 11.
第８図は従来の基本モードの円偏波マイクロストリッ
プアンテナの平面図であり、第７図と同一のものについ
ては同一の符号を付している。FIG. 8 is a plan view of a conventional fundamental polarization circularly polarized microstrip antenna, and the same elements as those in FIG. 7 are designated by the same reference numerals.
第８図の円偏波マイクロストリップアンテナにおい
て、下表面に接地導体（図示せず。）が形成された正方
形状の誘電体基板10の上表面の中央部に、誘電体基板10
の一辺よりも十分に短い直径Ｒを有する円形状の放射導
体12が形成され、該放射導体12の中心Ｏから径方向にず
れた位置Ｐに、例えば同軸ケーブルを介して給電され
る。ここで、放射導体12の中心Ｏを中心として給電点Ｐ
から時計回りの方向に角度45゜の位置及び反時計回りの
方向に角度135゜の位置における放射導体12の外周縁端
部にそれぞれ、矩形形状の切欠部12a,12bが形成され、
この切欠部12a,12bは、円偏波の電波を放射するための
モード縮退分離素子として動作する。In the circularly polarized microstrip antenna shown in FIG. 8, a dielectric substrate 10 is formed at the center of the upper surface of a square-shaped dielectric substrate 10 having a ground conductor (not shown) formed on the lower surface.
A circular radiation conductor 12 having a diameter R sufficiently shorter than one side is formed, and power is fed to a position P radially displaced from the center O of the radiation conductor 12 via, for example, a coaxial cable. Here, the feeding point P is centered on the center O of the radiation conductor 12.
From the outer peripheral edge portion of the radiation conductor 12 at a position of an angle of 45 ° in the clockwise direction and at a position of an angle of 135 ° in the counterclockwise direction, rectangular notches 12a, 12b are formed,
The notches 12a and 12b operate as mode degeneracy separation elements for radiating circularly polarized radio waves.
このマイクロストリップアンテナから円偏波の電波を
放射させるために、円偏波の長径と短径の比である軸比
の値を１に近づけることが所望され、この軸比が最良と
なる切欠部12a,12bの大きさは、誘電体基板10の比誘電
率と厚さ、並びに放射導体12の直径Ｒにより一義的に決
定され、また、軸比が最良となる周波数もまた、これら
３つのパラメータで決定される。In order to radiate circularly polarized radio waves from this microstrip antenna, it is desired that the value of the axial ratio, which is the ratio of the major axis to the minor axis of the circularly polarized wave, be close to 1, and the cutout portion where this axial ratio is the best. The sizes of 12a and 12b are uniquely determined by the relative permittivity and thickness of the dielectric substrate 10 and the diameter R of the radiation conductor 12, and the frequency at which the axial ratio is the best is also determined by these three parameters. Is determined by.
［発明が解決しようとする課題］ 上述の従来の直線偏波マイクロストリップアンテナに
おいて、誘電体基板10の比誘電率と厚さ、並びに放射導
体11の直径Ｒの３つのパラメータが製造上のバラツキに
より変化した場合、当該マイクロストリップアンテナの
共振周波数が変化してしまうという問題点があった。[Problems to be Solved by the Invention] In the above-described conventional linearly polarized microstrip antenna, the three parameters of the relative permittivity and thickness of the dielectric substrate 10 and the diameter R of the radiation conductor 11 are different due to manufacturing variations. When it changes, there is a problem that the resonance frequency of the microstrip antenna changes.
また、上述の従来の円偏波マイクロストリップアンテ
ナにおいても、直線偏波の場合と同様に、上記３つのパ
ラメータが変化した場合、軸比が最良となる周波数が変
化するという問題点があった。Further, also in the above-mentioned conventional circular polarization microstrip antenna, as in the case of linear polarization, there is a problem that the frequency at which the axial ratio becomes the best changes when the above three parameters change.
本発明の目的は、例えば製造上のバラツキにより上記
３つのパラメータが変化し軸比が最良となる周波数が変
化した場合であっても、所望の当該周波数を有する円偏
波マイクロストリップアンテナを提供することにある。An object of the present invention is to provide a circularly polarized microstrip antenna having a desired frequency even when the above-mentioned three parameters change and the frequency at which the axial ratio becomes the best changes due to manufacturing variations. Especially.
［課題を解決するための手段］ 本発明の円偏波マイクロストリップアンテナは、放射
導体と接地導体を誘電体基板を介して形成してなるマイ
クロストリップアンテナにおいて、上記放射導体と上記
接地導体の間に生じる電磁界がTMmnモードであり、ここ
で、ｍ、ｎは自然数であり、上記放射導体の中心を中心
として給電点から α＝±45/m＋90N/m［゜］ なる角度の位置における上記放射導体の外周縁端部であ
って、上記整数Ｎが偶数である位置に少なくとも１個の
第１の突起部又は切欠部を形成し、上記整数Ｎが奇数で
ある位置に少なくとも１個の第２の突起部又は切欠部を
形成したことを特徴とする。[Means for Solving the Problems] A circularly polarized microstrip antenna according to the present invention is a microstrip antenna in which a radiation conductor and a ground conductor are formed via a dielectric substrate, and between the radiation conductor and the ground conductor. The electromagnetic field generated at is the TMmn mode, where m and n are natural numbers, and the radiation at the angle α = ± 45 / m + 90N / m [°] from the feeding point with the center of the radiation conductor as the center. At least one first protrusion or notch is formed at a position where the integer N is an even number and is at least one second position at a position where the integer N is an odd number, at the outer peripheral edge of the conductor. It is characterized in that a protrusion or a notch is formed.
［作用］ 以上のように構成することにより、上記第１及び第２
の突起部又は切欠部がモード縮退分離素子として動作
し、軸比が最良となる所定の周波数を有する円偏波マイ
クロストリップアンテナを得ることができる。ここで、
上記第１及び第２の突起部又は切欠部の大きさに応じて
軸比が最良となる周波数が決定される。従って、例えば
製造上のバラツキにより上記誘電体基板の厚さ、その比
誘電率、又は上記放射導体の直径が変化した場合であっ
ても、上記放射導体の大きさを変化させずに、上記第１
及び第２の突起部又は切欠部の大きさを変化することに
より、軸比が最も良好となる周波数を調整することがで
きる。例えば、上記突起部の長さが比較的長く、かつ上
記切欠部の長さが比較的短い放射導体を形成し、上記突
起部の長さが短くなるように上記突起部を切断し、及び
／又は上記切欠部の長さが長くなるように上記放射導体
をさらに切断することによって、軸比が最良となる所望
の周波数を有する円偏波マイクロストリップアンテナを
得ることができる。[Operation] With the above configuration, the first and second
The projecting portion or notch portion operates as a mode degenerate separation element, and a circularly polarized microstrip antenna having a predetermined frequency with the best axial ratio can be obtained. here,
The frequency at which the axial ratio is the best is determined according to the size of the first and second protrusions or notches. Therefore, for example, even when the thickness of the dielectric substrate, the relative permittivity thereof, or the diameter of the radiation conductor is changed due to manufacturing variations, the size of the radiation conductor is not changed and 1
By changing the size of the second protrusion or the notch, the frequency at which the axial ratio becomes the best can be adjusted. For example, a radiation conductor having a relatively long length of the protrusion and a relatively short length of the notch is formed, and the protrusion is cut so that the length of the protrusion becomes short, and / Alternatively, the circularly polarized microstrip antenna having a desired frequency with the best axial ratio can be obtained by further cutting the radiation conductor so that the length of the cutout portion becomes long.
なお、この円偏波マイクロストリップアンテナの共振
周波数は、公知の通り、給電点にインピーダンス整合回
路を接続して、上記軸比が最も良好となる周波数の調整
の後に、調整することができる。Note that the resonance frequency of the circularly polarized microstrip antenna can be adjusted, as is known, after the impedance matching circuit is connected to the feeding point and the frequency at which the axial ratio becomes the best is adjusted.
［実施例］ 以下、図面を参照して本発明による実施例について説
明する。Embodiments Embodiments according to the present invention will be described below with reference to the drawings.
第１の実施例 第１図は本発明の第１の実施例である直線偏波マイク
ロストリップアンテナの平面図であり、第２図は第１図
のＡ−Ａ′線についての縦断面図である。First Embodiment FIG. 1 is a plan view of a linearly polarized microstrip antenna according to a first embodiment of the present invention, and FIG. 2 is a vertical sectional view taken along the line AA ′ of FIG. is there.
第１図において、下表面に接地導体14が形成された正
方形状の誘電体基板10の上表面の中央部に、誘電体基板
10の一辺よりも十分に短い直径Ｒを有する円形状の放射
導体13が形成され、該放射導体13の中心Ｏから径方向に
ずれた位置Ｐにおける放射導体13に給電用同軸ケーブル
20の中心導体21が接続されるとともに、位置Ｐの直下に
おける接地導体14に同軸ケーブル20の接地導体22が接続
される。また、放射導体13の中心Ｏと給電点Ｐとを無ぶ
直線（以下、基線BLという。）上であって放射導体13の
外周縁端部に、基線BLと垂直な幅ｗと基線BLと平行な長
さｌを有する矩形形状の突起部13aが、上記外周縁端部
から突出して形成される。In FIG. 1, a dielectric substrate is formed at the center of the upper surface of a square dielectric substrate 10 having a ground conductor 14 formed on the lower surface.
A circular radiation conductor 13 having a diameter R which is sufficiently shorter than one side of the radiation conductor 13 is formed, and a coaxial cable for feeding the radiation conductor 13 at a position P radially displaced from the center O of the radiation conductor 13.
The center conductor 21 of 20 is connected, and the ground conductor 22 of the coaxial cable 20 is connected to the ground conductor 14 immediately below the position P. In addition, on a straight line (hereinafter referred to as a base line BL) that does not intersect the center O of the radiating conductor 13 and the feeding point P, and at a peripheral edge portion of the radiating conductor 13, a width w perpendicular to the base line BL and a base line BL are provided. A rectangular protrusion 13a having a parallel length l is formed so as to protrude from the outer peripheral edge.
また、上記突起部13aに代えて、上記突起部13aと同じ
位置に幅ｗと長さｌを有する矩形形状の切欠部を形成す
る。Further, instead of the protrusion 13a, a rectangular notch having a width w and a length l is formed at the same position as the protrusion 13a.
第５図は、この直線偏波マイクロストリップアンテナ
の給電点Ｐにおける入力端反射係数S11［dB］の周波数
特性を示すグラフであり、ここで、長さｌが正のときは
突起部13aが形成されたことを示し、負のときは切欠部
が形成されたことを示している。また、誘電体基板10と
してガラス入りテフロン樹脂基板を用い、該誘電体基板
10の厚さは4mm、その比較電率は2.6、放射導体13の直径
Ｒは80mm、その厚さは0.035mm、突起部13a及び切欠部の
幅ｗは10mmであった。FIG. 5 is a graph showing the frequency characteristic of the reflection coefficient S 11 [dB] at the input end at the feeding point P of this linearly polarized microstrip antenna. Here, when the length l is positive, the protrusion 13a is It means that the cutout portion is formed, and when it is negative, the cutout portion is formed. Further, a Teflon resin substrate containing glass is used as the dielectric substrate 10, and the dielectric substrate
The thickness of 10 was 4 mm, its comparative electric constant was 2.6, the diameter R of the radiation conductor 13 was 80 mm, its thickness was 0.035 mm, and the width w of the protrusion 13a and the notch was 10 mm.
第５図に示すように、突起部13aがない場合（ｌ＝
０）の共振周波数は約1.305GHzであり、突起部13aの長
さｌが5mm及び2.5mmのときの共振周波数はそれぞれ約1.
28GHz、及び約1.29GHzである。さらに、切欠部の長さが
2.5mmであるときの共振周波数は約1.315GHzである。従
って、突起部13a又は切欠部の長さｌに応じて、当該直
線偏波マイクロストリップアンテナの共振周波数が決定
される。As shown in FIG. 5, when there is no protrusion 13a (l =
The resonance frequency of 0) is about 1.305 GHz, and the resonance frequencies when the length l of the protrusion 13a is 5 mm and 2.5 mm are about 1.30 GHz, respectively.
28 GHz and about 1.29 GHz. In addition, the length of the notch
The resonance frequency at 2.5 mm is about 1.315 GHz. Therefore, the resonance frequency of the linearly polarized microstrip antenna is determined according to the length l of the protrusion 13a or the notch.
従って、放射導体13の直径Ｒを変化させずに、突起部
13a又は切欠部の長さｌを変化することにより、共振周
波数を調整することができる。例えば、上記突起部13a
の長さｌが比較的長い放射導体13又は切欠部の長さが比
較的短い放射導体13を形成し、上記突起部13aの長さｌ
が短くなるように突起部13aを切断し、又は上記切欠部
の長さが長くなるように放射導体13をさらに切断するこ
とによって、所望の共振周波数を有する直線偏波マイク
ロストリップアンテナを得ることができる。Therefore, without changing the diameter R of the radiation conductor 13,
The resonance frequency can be adjusted by changing the length l of 13a or the notch. For example, the protrusion 13a
Forming a radiation conductor 13 having a relatively long length l or a radiation conductor 13 having a relatively short notch,
By cutting the projection 13a so as to be shorter, or further cutting the radiating conductor 13 so that the length of the notch becomes longer, thereby obtaining a linearly polarized microstrip antenna having a desired resonance frequency. it can.
以上説明したように、例えば製造上のバラツキにより
誘電体基板10の厚さ、その比誘電率、又は放射導体13の
直径Ｒが変化した場合であっても、上記突起部13a又は
切欠部の長さｌを変化することにより共振周波数を変化
させ、所望の共振周波数を有する直線偏波マイクロスト
リップアンテナを得ることができる。As described above, even if the thickness of the dielectric substrate 10, the relative permittivity thereof, or the diameter R of the radiation conductor 13 changes due to variations in manufacturing, for example, the length of the protrusion 13a or the cutout is increased. By changing the height l, the resonance frequency can be changed, and a linearly polarized microstrip antenna having a desired resonance frequency can be obtained.
以上の第１の実施例において、放射導体13と接地導体
10との間における電磁界が基本モードである場合につい
て述べたが、これに限らず、高次モードのマイクロスト
リップアンテナについても共振周波数の調整を同様に行
うことができる。In the first embodiment described above, the radiation conductor 13 and the ground conductor
The case where the electromagnetic field between 10 and 10 is the fundamental mode has been described, but the present invention is not limited to this, and the resonance frequency can be similarly adjusted for a microstrip antenna of a higher order mode.
以上の第１の実施例において、放射導体13が円形状で
ある場合について述べたが、これに限らず、矩形など他
の任意の形状であってもよい。In the above first embodiment, the case where the radiation conductor 13 has a circular shape has been described. However, the shape is not limited to this, and the radiation conductor 13 may have any other shape such as a rectangle.
第２の実施例 第３図は本発明の第２の実施例である円偏波マイクロ
ストリップアンテナの平面図であり、第４図は第３図の
Ｂ−Ｂ′線についての縦断面図である。第３図及び第４
図において、第１図及び第２図と同一のものについては
同一の符号を付している。Second Embodiment FIG. 3 is a plan view of a circularly polarized microstrip antenna according to a second embodiment of the present invention, and FIG. 4 is a vertical sectional view taken along line BB ′ of FIG. is there. 3 and 4
In the figure, the same components as those in FIGS. 1 and 2 are designated by the same reference numerals.
第３図において、下表面に接地導体14が形成された正
方形状の誘電体基板10の上表面の中央部に、誘電体基板
10の一辺よりも十分に短い直径Ｒを有する円形状の放射
導体15が形成され、該放射導体15の中心Ｏから径方向に
ずれた位置Ｐにおける放射導体15に給電用同軸ケーブル
20の中心導体21が接続されるとともに、位置Ｐの直下に
おける接地導体14に同軸ケーブル20の接地導体22が接続
される。また、放射導体15の中心Ｏを中心として給電点
Ｐから時計回りの方向に45゜の角度の位置、及び反時計
回りの方向に135゜の角度の位置における放射導体15の
各外周縁端部にそれぞれ、放射導体15の径方向と垂直な
幅ｗと径方向と平行な長さl2を有する切欠部15a,15bが
形成される。さらに、放射導体15の中心Ｏを中心として
給電点から反時計回りの方向に45゜の角度の位置、及び
時計回りの方向に135゜の角度の位置における放射導体1
5の各外周縁端部にそれぞれ、放射導体15の径方向と垂
直な幅ｗと径方向と平行な長さl1を有する突起部15c,15
dが、上記外周縁端部から突出して形成される。In FIG. 3, in the center of the upper surface of the square-shaped dielectric substrate 10 having the ground conductor 14 formed on the lower surface,
A circular radiating conductor 15 having a diameter R sufficiently shorter than one side of the radiating conductor 10 is formed, and a coaxial cable for feeding the radiating conductor 15 at a position P radially displaced from the center O of the radiating conductor 15
The center conductor 21 of 20 is connected, and the ground conductor 22 of the coaxial cable 20 is connected to the ground conductor 14 immediately below the position P. Further, each outer peripheral edge portion of the radiation conductor 15 at a position of an angle of 45 ° in the clockwise direction from the feeding point P and a position of an angle of 135 ° in the counterclockwise direction with the center O of the radiation conductor 15 as the center. The notch portions 15a and 15b each having a width w perpendicular to the radial direction of the radiation conductor 15 and a length l 2 parallel to the radial direction are formed in each. Further, with the center O of the radiating conductor 15 as the center, the radiating conductor 1 at a position at an angle of 45 ° in the counterclockwise direction and at a position of 135 ° in the clockwise direction from the feeding point.
Protrusions 15c, 15 having a width w perpendicular to the radial direction of the radiation conductor 15 and a length l 1 parallel to the radial direction at the respective outer peripheral edge portions of 5 respectively.
d is formed so as to project from the outer peripheral edge portion.
第６図は、この円偏波マイクロストリップアンテナの
軸比［dB］の周波数特性を示すグラフであり、放射角度
が０゜の場合を示している。ここで、誘電体基板10とし
てガラス入りテフロン樹脂基板を用い、該誘電体基板10
の厚さは4mm、その比誘電率は2.6、放射導体15の直径Ｒ
は64mm、その厚さは0.035mm、切欠部15a,15bと突起部15
c,15dの幅ｗは6mmであった。FIG. 6 is a graph showing the frequency characteristic of the axial ratio [dB] of this circularly polarized microstrip antenna, showing the case where the radiation angle is 0 °. Here, a Teflon resin substrate containing glass is used as the dielectric substrate 10, and the dielectric substrate 10
Has a thickness of 4 mm, its relative permittivity is 2.6, and the diameter of the radiation conductor 15 is R
Is 64 mm, its thickness is 0.035 mm, notches 15a and 15b and protrusion 15
The width w of c and 15d was 6 mm.
第６図に示すように、突起部15c,15dのみが形成され
る場合（l1＝5mm）において、軸比［dB］が最も０に近
づき軸比が最良であるときの周波数は約1.548であり、
切欠部15a,15bのみが形成される場合（l2＝5mm）におい
て、軸比が最良であるときの周波数は約1.571GHzであ
る。さらに、切欠部15a,15b及び突起部15c,15dがともに
形成された場合（l1＝2.5mm、l3＝3mm）において、軸比
が最良であるときの周波数は約1.565GHzである。従っ
て、切欠部15a,15bの長さl2、及び突起部15c,15dの長さ
l1に応じて、軸比が最良となる周波数が決定される。As shown in FIG. 6, when only the protrusions 15c and 15d are formed (l 1 = 5mm), the frequency when the axial ratio [dB] is closest to 0 and the axial ratio is the best is about 1.548. Yes,
When only the cutouts 15a and 15b are formed (l 2 = 5 mm), the frequency when the axial ratio is the best is about 1.571 GHz. Further, when the cutouts 15a, 15b and the projections 15c, 15d are both formed (l 1 = 2.5 mm, l 3 = 3 mm), the frequency when the axial ratio is the best is about 1.565 GHz. Therefore, the length l 2 of the cutouts 15a and 15b and the length of the protrusions 15c and 15d
Depending on l 1 , the frequency with the best axial ratio is determined.
従って、放射導体15の直径Ｒを変化させずに、切欠部
15a,15bの長さl2及び／又は突起部15c,15dの長さl1を変
化することにより、軸比が最良となる周波数を調整する
ことができる。例えば、突起部5c,15dの長さl1が比較的
長く、かつ切欠部15a,15bの長さl2が比較的短い放射導
体15を形成し、上記突起部15c,15dの長さl1が短くなる
ように突起部15c,15dを切断し、及び／又は切欠部15a,1
5bの長さl2が長くなるように放射導体15をさらに切断す
ることによって、軸比が最良となる所望の周波数を有す
る円偏波マイクロストリップアンテナを得ることができ
る。Therefore, without changing the diameter R of the radiation conductor 15,
By changing the length l 2 of 15a and 15b and / or the length l 1 of the protrusions 15c and 15d, the frequency at which the axial ratio is optimum can be adjusted. For example, the projections 5c and 15d have a relatively long length l 1 and the notches 15a and 15b have a relatively short length l 2 to form a radiating conductor 15, and the projections 15c and 15d have a length l 1 The projections 15c, 15d so that the length becomes short, and / or the cutouts 15a, 1
By further cutting the radiating conductor 15 so that the length l 2 of 5b becomes longer, a circularly polarized microstrip antenna having a desired frequency with the best axial ratio can be obtained.
なお、円偏波マイクロストリップアンテナの共振周波
数は、公知の通り、このアンテナの給電点にインピーダ
ンス整合回路を接続して、上記軸比の周波数調整の後に
調整することができる。The resonance frequency of the circular polarization microstrip antenna can be adjusted after the frequency adjustment of the axial ratio by connecting an impedance matching circuit to the feeding point of the antenna, as is well known.
以上説明したように、例えば製造上のバラツキにより
誘電体基板10の厚さ、その比誘電率、又は放射導体15の
直径Ｒが変化した場合であっても、上記切欠部15a,15b
の長さl2及び／又は突起部15c,15dの長さl1を変化する
ことにより、軸比が最も良好となる所望の周波数を有す
る円偏波マイクロストリップアンテナを得ることができ
る。As described above, even if the thickness of the dielectric substrate 10, the relative permittivity thereof, or the diameter R of the radiation conductor 15 is changed due to manufacturing variations, for example, the cutouts 15a and 15b are formed.
By changing the length l 2 and / or the length l 1 of the protrusions 15c and 15d, it is possible to obtain a circularly polarized microstrip antenna having a desired frequency having the best axial ratio.
以上の第２の実施例において、放射導体15と接地導体
10との間における電磁界が基本モードである場合につい
て述べたが、これに限らず、高次モードのマイクロスト
リップアンテナについても共振周波数の調整を同様に行
うことができる。なお、放射導体15と接地導体10との間
の電磁界が一般にTMmnモードであるとき（m,nは公知の
通り、自然数である。）、切欠部及び／又は突起部は、
放射導体15の中心Ｏを中心として給電点Ｐから時計回り
の方向に、次の（１）式で表される角度αの位置にある
放射導体15の外周縁端部に形成される。In the second embodiment described above, the radiation conductor 15 and the ground conductor
The case where the electromagnetic field between 10 and 10 is the fundamental mode has been described, but the present invention is not limited to this, and the resonance frequency can be similarly adjusted for a microstrip antenna of a higher order mode. When the electromagnetic field between the radiation conductor 15 and the ground conductor 10 is generally TMmn mode (m and n are natural numbers as is known), the notch and / or the protrusion are
The radiating conductor 15 is formed at the outer peripheral edge of the radiating conductor 15 at a position of an angle α represented by the following formula (1) in a clockwise direction from the feeding point P with the center O as the center.
α＝±45/m＋90N/m［゜］ ……（１） ここで、Ｎは整数であり、Ｎが偶数である上記位置に
１個以上の切欠部又は突起部が形成され、Ｎが偶数であ
る上記位置に１個以上の切欠部又は突起部が形成され、
従って、合計２個以上の切欠部及び／又は突起部が形成
される。α = ± 45 / m + 90 N / m [°] (1) where N is an integer and one or more notches or protrusions are formed at the above positions where N is an even number and N is an even number. One or more notches or protrusions are formed at a certain position,
Therefore, two or more notches and / or protrusions are formed in total.
以上の第２の実施例において、放射導体15が円形状で
ある場合について述べたが、これに限らず、矩形など他
の任意の形状であってもよい。In the second embodiment described above, the case where the radiation conductor 15 has a circular shape has been described. However, the shape is not limited to this and may have any other shape such as a rectangle.
［発明の効果］ 以上詳述したように本発明によれば、放射導体と接地
導体を誘電体基板を介して形成してなるマイクロスリッ
プアンテナにおいて、上記放射導体と上記接地導体の間
に生じる電磁界がTMmnモードであり、上記放射導体の中
心を中心として給電点から α＝±45/m＋90N/m［゜］ なる角度の位置における上記放射導体の外周縁端部であ
って、上記整数Ｎが偶数である位置に少なくとも１個の
第１の突起部又は切欠部を形成し、上記整数Ｎが奇数で
ある位置に少なくとも１個の第２の突起部又は切欠部を
形成して、円偏波マイクロストリップアンテナを構成し
たので、上記第１及び第２の突起部又は切欠部の大きさ
に応じて軸比が最良となる所定の共振周波数を有する円
偏波マイクロストリップアンテナを得ることができる。
従って、例えば製造上のバラツキにより上記誘電体基板
の厚さ、その比誘電率、又は放射導体の直径が変化した
場合であっても、上記放射導体の大きさを変化させず
に、上記第１及び第２の突起部又は切欠部の大きさを変
化して、所望の共振周波数を有する円偏波マイクロスト
リップアンテナを得ることができるという利点がある。[Effects of the Invention] As described in detail above, according to the present invention, in a microslip antenna in which a radiation conductor and a ground conductor are formed via a dielectric substrate, an electromagnetic wave generated between the radiation conductor and the ground conductor is provided. The field is TMmn mode, the outer peripheral edge of the radiation conductor at an angle α = ± 45 / m + 90 N / m [°] from the feeding point around the center of the radiation conductor, and the integer N is At least one first protrusion or notch is formed at an even-numbered position and at least one second protrusion or notch is formed at an odd-numbered integer N to provide circular polarization. Since the microstrip antenna is configured, it is possible to obtain a circularly polarized microstrip antenna having a predetermined resonance frequency that provides the best axial ratio according to the size of the first and second protrusions or cutouts.
Therefore, even if the thickness of the dielectric substrate, the relative permittivity thereof, or the diameter of the radiation conductor changes due to manufacturing variations, for example, the size of the radiation conductor is not changed, and the first Also, there is an advantage that the size of the second protrusion or the notch can be changed to obtain a circularly polarized microstrip antenna having a desired resonance frequency.
第１図は本発明の第１の実施例である直線偏波マイクロ
ストリップアンテナの平面図、 第２図は第１図のＡ−Ａ′線についての縦断面図、 第３図は本発明の第２の実施例である円偏波マイクロス
トリップアンテナの平面図、 第４図は第３図のＢ−Ｂ′線についての縦断面図、 第５図は第１の実施例の直線偏波マイクロストリップア
ンテナの給電点における入力端反射係数S11の周波数特
性を示すグラフ、 第６図は第２の実施例の円偏波マイクロストリップアン
テナの軸比の周波数特性を示すグラフ、 第７図は従来の直線偏波マイクロストリップアンテナの
平面図、 第８図は従来の円偏波マイクロストリップアンテナの平
面図である。 10……誘電体基板、 13,15……放射導体、 13a,15c,15d……突起部、 15a,15b……切欠部、 Ｏ……放射導体の中心、 Ｐ……給電点、 l,l1,l2……突起部又は切欠部の長さ。1 is a plan view of a linearly polarized microstrip antenna according to a first embodiment of the present invention, FIG. 2 is a vertical sectional view taken along the line AA 'in FIG. 1, and FIG. 2 is a plan view of a circularly polarized microstrip antenna according to the second embodiment, FIG. 4 is a vertical sectional view taken along the line BB 'in FIG. 3, and FIG. 5 is a linearly polarized microstrip according to the first embodiment. FIG. 6 is a graph showing the frequency characteristic of the input end reflection coefficient S 11 at the feeding point of the strip antenna, FIG. 6 is a graph showing the frequency characteristic of the axial ratio of the circularly polarized microstrip antenna of the second embodiment, and FIG. FIG. 8 is a plan view of the linearly polarized microstrip antenna of FIG. 8 and FIG. 8 is a plan view of a conventional circularly polarized microstrip antenna. 10 ... Dielectric substrate, 13,15 ... Radiation conductor, 13a, 15c, 15d ... Protrusion, 15a, 15b ... Notch, O ... Radiation conductor center, P ... Feed point, l, l 1 , l 2 ...... Length of protrusion or notch.
Claims (1)
形成してなるマイクロストリップアンテナにおいて、 上記放射導体と上記接地導体の間に生じる電磁界がTMmn
モードであり、ここで、ｍ、ｎは自然数であり、上記放
射導体の中心を中心として給電点から α＝±45/m＋90N/m［゜］ なる角度の位置における上記放射導体の外周縁端部であ
って、上記整数Ｎが偶数である位置に少なくとも１個の
第１の突起部又は切欠部を形成し、上記整数Ｎが奇数で
ある位置に少なくとも１個の第２の突起部又は切欠部を
形成したことを特徴とする円偏波マイクロストリップア
ンテナ。1. In a microstrip antenna in which a radiation conductor and a ground conductor are formed via a dielectric substrate, an electromagnetic field generated between the radiation conductor and the ground conductor is TMmn.
Mode, where m and n are natural numbers, and the outer peripheral edge of the radiating conductor at the position α = ± 45 / m + 90 N / m [°] from the feeding point around the center of the radiating conductor. And forming at least one first protrusion or notch at a position where the integer N is an even number, and at least one second protrusion or notch at a position where the integer N is an odd number. A circularly polarized microstrip antenna characterized by forming a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1217133A JPH088446B2 (en) | 1989-08-23 | 1989-08-23 | Microstrip antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1217133A JPH088446B2 (en) | 1989-08-23 | 1989-08-23 | Microstrip antenna |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0380603A JPH0380603A (en) | 1991-04-05 |
| JPH088446B2 true JPH088446B2 (en) | 1996-01-29 |
Family
ID=16699374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1217133A Expired - Lifetime JPH088446B2 (en) | 1989-08-23 | 1989-08-23 | Microstrip antenna |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH088446B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2852377B2 (en) * | 1991-07-30 | 1999-02-03 | 株式会社村田製作所 | Circularly polarized microstrip antenna |
| US5568155A (en) * | 1992-12-07 | 1996-10-22 | Ntt Mobile Communications Network Incorporation | Antenna devices having double-resonance characteristics |
| FR2866987A1 (en) * | 2004-03-01 | 2005-09-02 | Thomson Licensing Sa | MULTIBAND PLANAR ANTENNA |
| EP1826871B1 (en) | 2004-12-14 | 2009-10-07 | Fujitsu Ltd. | Antenna |
| CN101107750B (en) | 2005-01-24 | 2011-04-13 | 富士通株式会社 | Antenna and RF recognition label mounted with same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63140705U (en) * | 1987-03-09 | 1988-09-16 | ||
| JPS63149616U (en) * | 1987-03-20 | 1988-10-03 |
-
1989
- 1989-08-23 JP JP1217133A patent/JPH088446B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0380603A (en) | 1991-04-05 |
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