JPH0866023A - Rectifier circuit employing semiconductor element with control electrode - Google Patents
Rectifier circuit employing semiconductor element with control electrodeInfo
- Publication number
- JPH0866023A JPH0866023A JP17930792A JP17930792A JPH0866023A JP H0866023 A JPH0866023 A JP H0866023A JP 17930792 A JP17930792 A JP 17930792A JP 17930792 A JP17930792 A JP 17930792A JP H0866023 A JPH0866023 A JP H0866023A
- Authority
- JP
- Japan
- Prior art keywords
- switching element
- semiconductor element
- control pole
- control
- turned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Rectifiers (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
【産業上の利用分野】本発明は，ＦＥＴのような制御極
付半導体素子をコンバータの整流回路に用いて，整流回
路の高速，低損失化を図るようにした制御極付半導体素
子を用いた整流回路に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention uses a semiconductor device with a control pole such as an FET in a rectifier circuit of a converter to achieve a high speed and low loss of the rectifier circuit. Regarding the rectifier circuit.
【従来の技術】図１１は従来の制御極付半導体素子を用
いた整流回路を説明するための図である。同図におい
て，１はＦＥＴのような第１のスイッチング素子，２は
１次巻線Ｎ1 及び２次巻線Ｎ2 を有するトランス，３は
ＦＥＴのような制御極付半導体素子，４は該制御極付半
導体素子の寄生ダイオード，５はフライホイールダイオ
ード，６はチョークコイル，７はコンデンサ，８は負荷
であり，この回路に，別途外部接続電源９が並列接続さ
れている。次にこの回路の動作を説明する。第１のスイ
ッチング素子１がオンすると，直流電源（図示せず）か
らトランス２の１次巻線Ｎ1 に電圧が印加される。従っ
て２次巻線Ｎ2 に・印側がプラスになるように電圧が誘
起する。制御極付半導体素子の寄生ダイオード４，続い
て制御極付半導体素子３がオンし，チョークコイル６，
コンデンサ７，負荷８にエネルギを供給する。次に，第
１のスイッチング素子１がオフすると，トランス２の２
次巻線Ｎ2 にフライバック電圧が発生する。この電圧に
よって制御極付半導体素子３及び制御極付半導体素子の
寄生ダイオード４がカットオフとなり，フライホイール
ダイオード５がオンし，チョークコイル６の電流を連続
して流す。次に第１のスイッチング素子１がオンし，以
下同様の動作を繰り返す。また，外部接続電源９からも
負荷８にエネルギを供給する。2. Description of the Related Art FIG. 11 is a diagram for explaining a conventional rectifier circuit using a semiconductor device with a control electrode. In the figure, 1 is a first switching element such as an FET, 2 is a transformer having a primary winding N 1 and a secondary winding N 2 , 3 is a semiconductor element with a control pole such as FET, and 4 is the semiconductor element with a control pole. A parasitic diode of a semiconductor element with a control pole, 5 is a flywheel diode, 6 is a choke coil, 7 is a capacitor, 8 is a load, and an external connection power supply 9 is separately connected in parallel to this circuit. Next, the operation of this circuit will be described. When the first switching element 1 is turned on, a voltage is applied from the DC power supply (not shown) to the primary winding N 1 of the transformer 2. Therefore, the voltage is induced in the secondary winding N 2 so that the mark side becomes positive. The parasitic diode 4 of the semiconductor element with the control pole 4, the semiconductor element 3 with the control pole subsequently turned on, and the choke coil 6,
Energy is supplied to the capacitor 7 and the load 8. Next, when the first switching element 1 is turned off, the transformer 2
A flyback voltage is generated in the next winding N 2 . By this voltage, the semiconductor element with control pole 3 and the parasitic diode 4 of the semiconductor element with control pole are cut off, the flywheel diode 5 is turned on, and the current of the choke coil 6 is continuously supplied. Next, the first switching element 1 is turned on, and the same operation is repeated thereafter. Energy is also supplied to the load 8 from the externally connected power supply 9.
【発明が解決しようとする課題】しかし，このような従
来の制御極付半導体素子を用いた整流回路にあっては，
制御極付半導体素子３の制御極とチョークコイル６とが
接続されているので，整流回路の出力電圧に比較して並
列接続された外部接続電源９の電圧が高いと，負荷８が
軽くなるに従って，外部接続電源９の負荷分担が多くな
り整流回路の負荷分担が少なくなって，チョークコイル
６がカットオフする。このため，外部接続電源９によっ
て制御極付半導体素子３の制御極が順バイアス状態とな
って，制御極付半導体素子３が誤動作し，オンする。こ
の結果，外部接続電源９からトランス２の２次巻線
Ｎ2 ，制御極付半導体素子３を通して短絡電流Ｉs が通
流して制御極付半導体素子３が破壊すると共に，トラン
ス２が飽和して第１のスイッチング素子１が破壊すると
いう問題があった。However, in such a conventional rectifier circuit using a semiconductor element with a control electrode,
Since the control pole of the semiconductor element with control pole 3 and the choke coil 6 are connected, when the voltage of the externally connected power supply 9 connected in parallel is higher than the output voltage of the rectifier circuit, the load 8 becomes lighter. The load sharing of the externally connected power supply 9 increases and the load sharing of the rectifier circuit decreases, and the choke coil 6 cuts off. Therefore, the external connection power supply 9 causes the control pole of the semiconductor element with control pole 3 to be in a forward bias state, causing the semiconductor element with control pole 3 to malfunction and turn on. As a result, the short-circuit current I s flows from the externally connected power source 9 through the secondary winding N 2 of the transformer 2 and the semiconductor element 3 with control pole, the semiconductor element 3 with control pole is destroyed, and the transformer 2 is saturated. There is a problem that the first switching element 1 is destroyed.
【課題を解決するための手段】本発明は以上の欠点を除
去するために，第１のスイッチング素子をオンオフさ
せ，トランスを介して交流電圧を取り出し，該交流電圧
を整流素子で整流し，チョークコイルとコンデンサとで
平滑する回路において，上記整流素子として制御極付半
導体素子を用い，該制御極付半導体素子の制御信号とし
て第２のスイッチング素子を介して上記トランスに生ず
る電圧を用いると共に，上記第２のスイッチング素子を
制御することにより上記制御極付半導体素子をオンまた
はオフさせることを特徴とする制御極付半導体素子を用
いた整流回路を提供するものである。In order to eliminate the above drawbacks, the present invention turns on / off the first switching element, extracts an AC voltage through a transformer, rectifies the AC voltage with a rectifying element, and a choke. In a circuit for smoothing with a coil and a capacitor, a semiconductor element with a control pole is used as the rectifying element, and a voltage generated in the transformer via a second switching element is used as a control signal for the semiconductor element with a control pole. The present invention provides a rectifier circuit using a semiconductor element with a control pole, which is characterized in that the semiconductor element with a control pole is turned on or off by controlling a second switching element.
【実施例】図１は本発明の一実施例を説明するための図
であり，図２はその動作を説明するための図である。先
ず，図１により構成を説明すると，トランス２の２次巻
線Ｎ2 とチョークコイル６の接続点と制御極付半導体素
子３の制御極間には，トランジスタのような第２のスイ
ッチング素子１０が接続される。該第２のスイッチング
素子１０のオンオフを制御する信号は，第１のスイッチ
ング素子１の制御極に挿入されている検出回路１１から
制御回路１２及び駆動回路１３を介して，第２のスイッ
チング素子１０の制御極に伝達される。次に図１及び図
２によりこの回路の動作を説明する。第１のスイッチン
グ素子１がオンすると，直流電源（図示せず）からトラ
ンス２の１次巻線Ｎ1 に電圧が印加される。従って２次
巻線Ｎ2 に・印側がプラスになるように電圧が誘起す
る。制御極付半導体素子の寄生ダイオード４，続いて制
御極付半導体素子３がオンし，チョークコイル６，コン
デンサ７，負荷８にエネルギを供給する。次に，第１の
スイッチング素子１がオフすると，トランス２の２次巻
線Ｎ2 にフライバック電圧が発生する。この電圧によっ
て制御極付半導体素子３及び制御極付半導体素子の寄生
ダイオード４がカットオフとなり，フライホイールダイ
オード５がオンし，チョークコイル６の電流を連続して
流す。次に第１のスイッチング素子１がオンし，以下同
様の動作を繰り返す。また，外部接続電源９からも負荷
８にエネルギを供給する。このような動作状態の時に，
負荷８を通流する電流が少なくなると，図２（ａ）に示
すように第１のスイッチング素子１を駆動する駆動信号
のパルス幅が狭くなる。図２（ｂ）に示すように検出回
路１１が検出するパルス幅検出電圧の平均電圧値が制御
基準値に達すると，制御回路１２は図２（ｃ）に示すよ
うな第２のスイッチング素子１０をオフさせる信号を駆
動回路１３に伝達し，該駆動回路１３は図２（ｄ）に示
すように第２のスイッチング素子１０をオフさせる。第
２のスイッチング素子１０がオフすることにより，制御
極付半導体素子３の制御極への信号が図２（ｅ）に示す
ように遮断される。従って，チョークコイル６がカット
オフしても，そのために外部接続電源９によって制御極
付半導体素子３の制御極が順バイアス状態になることは
なく，制御極付半導体素子３の誤動作による制御極付半
導体素子３の破壊が防止されると共に，トランス２の飽
和による第１のスイッチング素子１の破壊も防止され
る。また，負荷８を通流する電流が多くなると，図２
（ａ）に示すように第１のスイッチング素子を駆動する
駆動信号のパルス幅が広くなる。図２（ｂ）に示すよう
に，検出回路１１が検出するパルス幅検出電圧の平均電
圧値が制御基準値に達すると，制御回路１２は図２
（ｃ）に示すような第２のスイッチング素子１０をオン
させる信号を駆動回路１３に伝達し，該駆動回路１３は
図２（ｄ）に示すように第２のスイッチング素子１０を
オンさせる。第２のスイッチング素子１０がオンするこ
とにより，制御極付半導体素子３の制御極へ図２（ｅ）
に示すように信号が再び伝達され，通常の動作状態に復
帰する。図３は本発明の他の一実施例を説明するための
図であり，図４はその動作を説明するための図である。
先ず，図３により構成を説明すると，トランス２の２次
巻線Ｎ2 とチョークコイル６の接続点と制御極付半導体
素子３の制御極間には，第２のスイッチング素子１０が
接続される。該第２のスイッチング素子１０のオンオフ
を制御する信号は，出力電流の通流路に挿入されている
検出回路１１から制御回路１２及び駆動回路１３を介し
て，第２のスイッチング素子１０の制御極に伝達され
る。次に図３及び図４によりこの回路の動作を説明す
る。第１のスイッチング素子１がオンし，トランス２の
２次巻線Ｎ2 に・印側がプラスになるように電圧が誘起
すると，制御極付半導体素子の寄生ダイオード４，続い
て制御極付半導体素子３がオンし，チョークコイル６，
コンデンサ７，負荷８にエネルギを供給する。次に，第
１のスイッチング素子１がオフすると，トランス２の２
次巻線Ｎ2 にフライバック電圧が発生し，この電圧によ
って制御極付半導体素子３及び制御極付半導体素子の寄
生ダイオード４がカットオフとなり，フライホイールダ
イオード５がオンし，チョークコイル６の電流を連続し
て流す。次に第１のスイッチング素子１がオンし，以下
同様の動作を繰り返す。また，外部接続電源９からも負
荷８にエネルギを供給する。このような動作状態の時
に，負荷８を通流する電流が少なくなると，図４（ａ）
に示すように第１のスイッチング素子１を駆動する駆動
信号のパルス幅が狭くなる。図４（ｂ）に示すように検
出回路１１が検出する出力電流検出値が制御基準値に達
すると，制御回路１２は図４（ｃ）に示すような第２の
スイッチング素子１０をオフさせる信号を駆動回路１３
に伝達し，該駆動回路１３は図４（ｄ）に示すように第
２のスイッチング素子１０をオフさせる。第２のスイッ
チング素子１０がオフすることにより，制御極付半導体
素子３の制御極への信号が図４（ｅ）に示すように遮断
される。従って，チョークコイル６がカットオフして
も，そのために外部接続電源９によって制御極付半導体
素子３の制御極が順バイアス状態になることはなく，制
御極付半導体素子３の誤動作による制御極付半導体素子
３の破壊が防止されると共に，トランス２の飽和による
第１のスイッチング素子１の破壊も防止される。また，
負荷８を通流する電流が多くなると，図４（ａ）に示す
ように第１のスイッチング素子を駆動する駆動信号のパ
ルス幅が広くなる。図４（ｂ）に示すように，検出回路
１１が検出する出力電流検出値が制御基準値に達する
と，制御回路１２は図４（ｃ）に示すような第２のスイ
ッチング素子１０をオンさせる信号を駆動回路１３に伝
達し，該駆動回路１３は図４（ｄ）に示すように第２の
スイッチング素子１０をオンさせる。第２のスイッチン
グ素子１０がオンすることにより，制御極付半導体素子
３の制御極へ図４（ｅ）に示すように信号が再び伝達さ
れ，通常の動作状態に復帰する。図５は本発明の他の一
実施例を説明するための図であり，図６はその動作を説
明するための図である。先ず，図５により構成を説明す
ると，トランス２の２次巻線Ｎ2 とチョークコイル６の
接続点と制御極付半導体素子３の制御極間には，第２の
スイッチング素子１０が接続される。チョークコイル６
の２次巻線の電圧を検出して得られる第２のスイッチン
グ素子１０のオンオフを制御する信号は，制御回路１２
及び駆動回路１３を介して，第２のスイッチング素子１
０の制御極に伝達される。次に図５及び図６によりこの
回路の動作を説明する。第１のスイッチング素子１がオ
ンし，トランス２の２次巻線Ｎ2 に・印側がプラスにな
るように電圧が誘起すると，制御極付半導体素子の寄生
ダイオード４，続いて制御極付半導体素子３がオンし，
チョークコイル６，コンデンサ７，負荷８にエネルギを
供給する。次に，第１のスイッチング素子１がオフする
と，トランス２の２次巻線Ｎ2 にフライバック電圧が発
生し，この電圧によって制御極付半導体素子３及び制御
極付半導体素子の寄生ダイオード４がカットオフとな
り，フライホイールダイオード５がオンし，チョークコ
イル６の電流を連続して流す。次に第１のスイッチング
素子１がオンし，以下同様の動作を繰り返す。また，外
部接続電源９からも負荷８にエネルギを供給する。この
ような動作状態の時に，図６（ａ）に示すように負荷８
を通流する電流が少なくなると，図６（ｂ）に示すよう
にチョークコイル６を通流する電流が少なくなり，図６
（ｃ）に示すように第１のスイッチング素子１を駆動す
る駆動信号のパルス幅が狭くなって，図６（ｄ）に示す
ようにチョークコイル６の検出電圧のパルス幅も狭くな
る。図６（ｄ）に示す電圧を波形整形した図６（ｅ）に
示すような電圧の平均電圧値が図６（ｆ）に示すように
制御基準値に達すると，制御回路１２は図６（ｇ）に示
すような第２のスイッチング素子１０をオフさせる信号
を駆動回路１３に伝達し，該駆動回路１３は図６（ｈ）
に示すように第２のスイッチング素子１０をオフさせ
る。第２のスイッチング素子１０がオフすることによ
り，制御極付半導体素子３の制御極への信号が図６
（ｉ）に示すように遮断される。従って，チョークコイ
ル６がカットオフしても，そのために外部接続電源９に
よって制御極付半導体素子３の制御極が順バイアス状態
になることはなく，制御極付半導体素子３の誤動作によ
る制御極付半導体素子３の破壊が防止されると共に，ト
ランス２の飽和による第１のスイッチング素子１の破壊
も防止される。また，図６（ａ）に示すように負荷８を
通流する電流が多くなると，図６（ｂ）に示すようにチ
ョークコイル６を通流する電流が多くなり，図６（ｃ）
に示すように第１のスイッチング素子１を駆動する駆動
信号のパルス幅が広くなって，図６（ｄ）に示すように
チョークコイル６の検出電圧のパルス幅も広くなる。図
６（ｄ）に示す電圧を波形整形した図６（ｅ）に示すよ
うな電圧の平均電圧値が図６（ｆ）に示すように制御基
準値に達すると，制御回路１２は図６（ｇ）に示すよう
な第２のスイッチング素子１０をオンさせる信号を駆動
回路１３に伝達し，該駆動回路１３は図６（ｈ）に示す
ように第２のスイッチング素子１０をオンさせる。第２
のスイッチング素子１０がオンすることにより，制御極
付半導体素子３の制御極へ図６（ｉ）に示すように信号
が再び伝達され，通常の動作状態に復帰する。図７は本
発明の他の一実施例を説明するための図であり，図８は
その動作を説明するための図である。先ず，図７により
構成を説明すると，トランス２の２次巻線Ｎ2 とチョー
クコイル６の接続点と制御極付半導体素子３の制御極間
には，第２のスイッチング素子１０が接続される。該第
２のスイッチング素子１０のオンオフを制御する信号
は，入力電流の通流路に挿入されている検出回路１１か
ら制御回路１２及び駆動回路１３を介して，第２のスイ
ッチング素子１０の制御極に伝達される。次に図７及び
図８によりこの回路の動作を説明する。第１のスイッチ
ング素子１がオンし，トランス２の２次巻線Ｎ2 に・印
側がプラスになるように電圧が誘起すると，制御極付半
導体素子の寄生ダイオード４，続いて制御極付半導体素
子３がオンし，チョークコイル６，コンデンサ７，負荷
８にエネルギを供給する。次に，第１のスイッチング素
子１がオフすると，トランス２の２次巻線Ｎ2 にフライ
バック電圧が発生し，この電圧によって制御極付半導体
素子３及び制御極付半導体素子の寄生ダイオード４がカ
ットオフとなり，フライホイールダイオード５がオン
し，チョークコイル６の電流を連続して流す。次に第１
のスイッチング素子１がオンし，以下同様の動作を繰り
返す。また，外部接続電源９からも負荷８にエネルギを
供給する。第１のスイッチング素子１の制御極には図８
（ａ）に示すようなパルスが印加されており，図８
（ｂ）に示す入力電流値が制御基準値以上の場合に，図
８（ｃ）に示すように入力電流パルスの立ち上がり時に
入力電流よりも僅かにパルス幅の広いワンショットのパ
ルスを発生し，図８（ｄ）に示すように入力電流パルス
の立ち下がり時に入力電流よりも僅かにパルス幅の広い
ワンショットのパルスを発生すると共に，図８（ｃ）及
び図８（ｄ）に示すパルスのＯＲをとって得られた図８
（ｅ）に示す制御信号を制御回路１２が駆動回路１３に
伝達し，駆動回路１３は第２のスイッチング素子１０を
駆動し，制御する。このような動作状態の時に，負荷８
を通流する電流が少なくなると，図８（ａ）に示すよう
に第１のスイッチング素子１を駆動する駆動信号のパル
ス幅が狭くなって，図８（ｂ）に示すように検出回路１
１を通流する入力電流も少なくなる。図８（ｂ）に示す
入力電流値が制御基準値未満になると，図８（ｂ）及び
図８（ｂ）に示すようにワンショットのパルスを発生し
なくなり，制御回路１２は図８（ｅ）に示すような第２
のスイッチング素子１０をオフさせる信号を駆動回路１
３に伝達し，該駆動回路１３は図８（ｆ）に示すように
第２のスイッチング素子１０をオフさせる。第２のスイ
ッチング素子１０がオフすることにより，制御極付半導
体素子３の制御極への信号が図８（ｇ）に示すように遮
断される。従って，チョークコイル６がカットオフして
も，そのために外部接続電源９によって制御極付半導体
素子３の制御極が順バイアス状態になることはなく，制
御極付半導体素子３の誤動作による制御極付半導体素子
３の破壊が防止されると共に，トランス２の飽和による
第１のスイッチング素子１の破壊も防止される。また，
負荷８を通流する電流が多くなると，図８（ａ）に示す
ように第１のスイッチング素子１を駆動する駆動信号の
パルス幅が広くなって，図８（ｂ）に示すように検出回
路１１を通流する入力電流も多くなる。図８（ｂ）に示
す入力電流値が制御基準値以上になると，図８（ｂ）及
び図８（ｂ）に示すようにワンショットのパルスを発生
し始め，制御回路１２は図８（ｅ）に示すような第２の
スイッチング素子１０をオンさせる信号を駆動回路１３
に伝達し，該駆動回路１３は図８（ｆ）に示すように第
２のスイッチング素子１０をオンさせる。第２のスイッ
チング素子１０がオンすることにより，制御極付半導体
素子３の制御極へ図８（ｇ）に示すように信号が再び伝
達され，通常の動作状態に復帰する。図９は本発明の他
の一実施例を説明するための図であり，図１０はその動
作を説明するための図である。先ず，図９により構成を
説明すると，トランス２の２次巻線Ｎ2 とチョークコイ
ル６の接続点と制御極付半導体素子３の制御極間には，
第２のスイッチング素子１０が接続される。該第２のス
イッチング素子１０のオンオフを制御する信号は，第１
のスイッチング素子１の制御極に挿入されている検出回
路１１から駆動回路１３を介して第２のスイッチング素
子１０の制御極に伝達される。次に図９及び図１０によ
りこの回路の動作を説明する。第１のスイッチング素子
１がオンし，トランス２の２次巻線Ｎ2 に・印側がプラ
スになるように電圧が誘起すると，制御極付半導体素子
の寄生ダイオード４，続いて制御極付半導体素子３がオ
ンし，チョークコイル６，コンデンサ７，負荷８にエネ
ルギを供給する。次に，第１のスイッチング素子１がオ
フすると，トランス２の２次巻線Ｎ2 にフライバック電
圧が発生し，この電圧によって制御極付半導体素子３及
び制御極付半導体素子の寄生ダイオード４がカットオフ
となり，フライホイールダイオード５がオンし，チョー
クコイル６の電流を連続して流す。次に第１のスイッチ
ング素子１がオンし，以下同様の動作を繰り返す。ま
た，外部接続電源９からも負荷８にエネルギを供給す
る。このような動作状態の時に，負荷８を通流する電流
が少なくなると，図１０（ａ）に示すように第１のスイ
ッチング素子１を駆動する駆動信号のパルス幅が狭くな
る。検出回路１１は図１０（ａ）に示すパルス幅の狭く
なった駆動信号を検出して駆動回路１３に伝達し，駆動
回路１３はこの信号に従って第２のスイッチング素子１
０を駆動する。このように，負荷８を通流する電流が少
なくなっても，第２のスイッチング素子１０はオンオフ
を繰り返しているので，制御極付半導体素子３の制御極
への信号は図１０（ｃ）に示すようになり，制御極付半
導体素子３はオンオフを繰り返す。従って，チョークコ
イル６がカットオフしても，そのために外部接続電源９
によって制御極付半導体素子３の制御極が順バイアス状
態になることはなく，制御極付半導体素子３の誤動作に
よる制御極付半導体素子３の破壊が防止されると共に，
トランス２の飽和による第１のスイッチング素子１の破
壊も防止される。また，負荷８を通流する電流が多くな
ると，図１０（ａ）に示すように第１のスイッチング素
子１を駆動する駆動信号のパルス幅が広くなる。検出回
路１１は図１０（ａ）に示すパルス幅の広くなった駆動
信号を検出して駆動回路１３に伝達し，駆動回路１３は
この信号に従って第２のスイッチング素子１０を駆動す
る。このようにして，第２のスイッチング素子１０はオ
ンオフを繰り返すので，制御極付半導体素子３の制御極
への信号は図１０（ｃ）に示すようになり，制御極付半
導体素子３はオンオフを繰り返す。1 is a diagram for explaining an embodiment of the present invention, and FIG. 2 is a diagram for explaining the operation thereof. First, explaining the structure by Figure 1, the control machining gap of the secondary winding N 2 and the connection point between the control Kiwametsuki semiconductor device 3 of the choke coil 6 of the transformer 2, the second switching element such as a transistor 10 Are connected. A signal for controlling ON / OFF of the second switching element 10 is transmitted from the detection circuit 11 inserted in the control pole of the first switching element 1 to the second switching element 10 via the control circuit 12 and the drive circuit 13. Is transmitted to the control pole of. Next, the operation of this circuit will be described with reference to FIGS. When the first switching element 1 is turned on, a voltage is applied from the DC power supply (not shown) to the primary winding N 1 of the transformer 2. Therefore, the voltage is induced in the secondary winding N 2 so that the mark side becomes positive. The parasitic diode 4 of the semiconductor element with a control pole, and subsequently the semiconductor element 3 with a control pole are turned on to supply energy to the choke coil 6, the capacitor 7 and the load 8. Next, when the first switching element 1 is turned off, a flyback voltage is generated in the secondary winding N 2 of the transformer 2. By this voltage, the semiconductor element with control pole 3 and the parasitic diode 4 of the semiconductor element with control pole are cut off, the flywheel diode 5 is turned on, and the current of the choke coil 6 is continuously supplied. Next, the first switching element 1 is turned on, and the same operation is repeated thereafter. Energy is also supplied to the load 8 from the externally connected power supply 9. In such an operating state,
When the current flowing through the load 8 decreases, the pulse width of the drive signal for driving the first switching element 1 becomes narrow as shown in FIG. When the average voltage value of the pulse width detection voltage detected by the detection circuit 11 reaches the control reference value as shown in FIG. 2B, the control circuit 12 causes the second switching element 10 as shown in FIG. Is transmitted to the drive circuit 13, and the drive circuit 13 turns off the second switching element 10 as shown in FIG. When the second switching element 10 is turned off, the signal to the control pole of the semiconductor element 3 with a control pole is cut off as shown in FIG. Therefore, even if the choke coil 6 is cut off, the control pole of the semiconductor element 3 with control pole is not forward biased by the externally connected power supply 9, and the control pole with semiconductor element 3 with control pole is malfunctioned. The breakdown of the semiconductor element 3 is prevented, and the breakdown of the first switching element 1 due to the saturation of the transformer 2 is also prevented. In addition, when the current flowing through the load 8 increases, as shown in FIG.
As shown in (a), the pulse width of the drive signal for driving the first switching element becomes wider. As shown in FIG. 2B, when the average voltage value of the pulse width detection voltage detected by the detection circuit 11 reaches the control reference value, the control circuit 12 operates as shown in FIG.
A signal for turning on the second switching element 10 as shown in (c) is transmitted to the drive circuit 13, and the drive circuit 13 turns on the second switching element 10 as shown in FIG. 2 (d). When the second switching element 10 is turned on, the second switching element 10 is turned on to the control pole of the semiconductor element 3 with a control pole.
The signal is transmitted again as shown in, and the normal operation state is restored. FIG. 3 is a diagram for explaining another embodiment of the present invention, and FIG. 4 is a diagram for explaining the operation thereof.
First, explaining the structure by Figure 3, the control machining gap of the secondary winding N 2 and the connection point between the control Kiwametsuki semiconductor device 3 of the choke coil 6 of the transformer 2, the second switching element 10 is connected . The signal for controlling the on / off of the second switching element 10 is transmitted from the detection circuit 11 inserted in the flow path of the output current through the control circuit 12 and the drive circuit 13 to the control pole of the second switching element 10. Be transmitted to. Next, the operation of this circuit will be described with reference to FIGS. When the first switching element 1 is turned on and a voltage is induced in the secondary winding N 2 of the transformer 2 such that the mark side becomes positive, the parasitic diode 4 of the semiconductor element with control pole, and subsequently the semiconductor element with control pole 3 turns on, choke coil 6,
Energy is supplied to the capacitor 7 and the load 8. Next, when the first switching element 1 is turned off, the transformer 2
A flyback voltage is generated in the next winding N 2 , and the voltage causes the semiconductor element with control pole 3 and the parasitic diode 4 of the semiconductor element with control pole to be cut off, the flywheel diode 5 to be turned on, and the current of the choke coil 6 to be turned on. To flow continuously. Next, the first switching element 1 is turned on, and the same operation is repeated thereafter. Energy is also supplied to the load 8 from the externally connected power supply 9. When the current flowing through the load 8 decreases in such an operating state, as shown in FIG.
As shown in, the pulse width of the drive signal for driving the first switching element 1 becomes narrow. When the detected output current value detected by the detection circuit 11 reaches the control reference value as shown in FIG. 4B, the control circuit 12 outputs a signal for turning off the second switching element 10 as shown in FIG. 4C. Drive circuit 13
Then, the drive circuit 13 turns off the second switching element 10 as shown in FIG. 4 (d). When the second switching element 10 is turned off, the signal to the control pole of the semiconductor element 3 with a control pole is cut off as shown in FIG. Therefore, even if the choke coil 6 is cut off, the control pole of the semiconductor element 3 with control pole is not forward biased by the externally connected power supply 9, and the control pole with semiconductor element 3 with control pole is malfunctioned. The breakdown of the semiconductor element 3 is prevented, and the breakdown of the first switching element 1 due to the saturation of the transformer 2 is also prevented. Also,
As the current flowing through the load 8 increases, the pulse width of the drive signal for driving the first switching element becomes wider as shown in FIG. As shown in FIG. 4B, when the output current detection value detected by the detection circuit 11 reaches the control reference value, the control circuit 12 turns on the second switching element 10 as shown in FIG. 4C. The signal is transmitted to the drive circuit 13, and the drive circuit 13 turns on the second switching element 10 as shown in FIG. When the second switching element 10 is turned on, the signal is transmitted again to the control pole of the semiconductor element 3 with control pole as shown in FIG. 4 (e), and the normal operation state is restored. FIG. 5 is a diagram for explaining another embodiment of the present invention, and FIG. 6 is a diagram for explaining the operation thereof. First, explaining the structure by 5, the control machining gap of the secondary winding N 2 and the connection point between the control Kiwametsuki semiconductor device 3 of the choke coil 6 of the transformer 2, the second switching element 10 is connected . Choke coil 6
The signal for controlling the on / off of the second switching element 10 obtained by detecting the voltage of the secondary winding of
And the second switching element 1 via the drive circuit 13.
0 is transmitted to the control pole. Next, the operation of this circuit will be described with reference to FIGS. When the first switching element 1 is turned on and a voltage is induced in the secondary winding N 2 of the transformer 2 such that the mark side becomes positive, the parasitic diode 4 of the semiconductor element with control pole, and subsequently the semiconductor element with control pole 3 turns on,
Energy is supplied to the choke coil 6, the capacitor 7, and the load 8. Next, when the first switching element 1 is turned off, a flyback voltage is generated in the secondary winding N 2 of the transformer 2, and this voltage causes the semiconductor element with control pole 3 and the parasitic diode 4 of the semiconductor element with control pole to be generated. It is cut off, the flywheel diode 5 is turned on, and the current of the choke coil 6 is continuously supplied. Next, the first switching element 1 is turned on, and the same operation is repeated thereafter. Energy is also supplied to the load 8 from the externally connected power supply 9. In such an operating state, as shown in FIG.
When the current flowing through the choke coil 6 decreases, the current flowing through the choke coil 6 decreases as shown in FIG.
As shown in FIG. 6C, the pulse width of the drive signal for driving the first switching element 1 becomes narrower, and as shown in FIG. 6D, the pulse width of the detection voltage of the choke coil 6 also becomes narrower. When the average voltage value of the voltage shown in FIG. 6 (e) obtained by waveform shaping the voltage shown in FIG. 6 (d) reaches the control reference value as shown in FIG. 6 (f), the control circuit 12 causes the control circuit 12 A signal for turning off the second switching element 10 as shown in g) is transmitted to the drive circuit 13, and the drive circuit 13 outputs the signal shown in FIG.
As shown in, the second switching element 10 is turned off. When the second switching element 10 is turned off, the signal to the control pole of the semiconductor element 3 with a control pole is changed to that shown in FIG.
It is shut off as shown in (i). Therefore, even if the choke coil 6 is cut off, the control pole of the semiconductor element 3 with control pole is not forward biased by the externally connected power supply 9, and the control pole with semiconductor element 3 with control pole is malfunctioned. The breakdown of the semiconductor element 3 is prevented, and the breakdown of the first switching element 1 due to the saturation of the transformer 2 is also prevented. Further, as the current flowing through the load 8 increases as shown in FIG. 6 (a), the current flowing through the choke coil 6 also increases as shown in FIG. 6 (b).
As shown in FIG. 6A, the pulse width of the drive signal for driving the first switching element 1 becomes wider, and as shown in FIG. 6D, the pulse width of the detection voltage of the choke coil 6 also becomes wider. When the average voltage value of the voltage shown in FIG. 6 (e) obtained by waveform shaping the voltage shown in FIG. 6 (d) reaches the control reference value as shown in FIG. 6 (f), the control circuit 12 causes the control circuit 12 A signal for turning on the second switching element 10 as shown in g) is transmitted to the drive circuit 13, and the drive circuit 13 turns on the second switching element 10 as shown in FIG. Second
When the switching element 10 is turned on, the signal is again transmitted to the control pole of the semiconductor element 3 with control pole as shown in FIG. 6 (i), and the normal operation state is restored. FIG. 7 is a diagram for explaining another embodiment of the present invention, and FIG. 8 is a diagram for explaining the operation thereof. First, explaining the structure by 7, the control machining gap of the secondary winding N 2 and the connection point between the control Kiwametsuki semiconductor device 3 of the choke coil 6 of the transformer 2, the second switching element 10 is connected . The signal for controlling the on / off of the second switching element 10 is transmitted from the detection circuit 11 inserted in the flow path of the input current through the control circuit 12 and the drive circuit 13 to the control pole of the second switching element 10. Be transmitted to. Next, the operation of this circuit will be described with reference to FIGS. When the first switching element 1 is turned on and a voltage is induced in the secondary winding N 2 of the transformer 2 such that the mark side becomes positive, the parasitic diode 4 of the semiconductor element with control pole, and subsequently the semiconductor element with control pole 3 is turned on to supply energy to the choke coil 6, the capacitor 7 and the load 8. Next, when the first switching element 1 is turned off, a flyback voltage is generated in the secondary winding N 2 of the transformer 2, and this voltage causes the semiconductor element with control pole 3 and the parasitic diode 4 of the semiconductor element with control pole to be generated. It is cut off, the flywheel diode 5 is turned on, and the current of the choke coil 6 is continuously supplied. Then the first
The switching element 1 is turned on, and the same operation is repeated thereafter. Energy is also supplied to the load 8 from the externally connected power supply 9. The control pole of the first switching element 1 is shown in FIG.
A pulse as shown in FIG.
When the input current value shown in (b) is greater than or equal to the control reference value, a one-shot pulse having a pulse width slightly wider than the input current is generated at the rising of the input current pulse as shown in FIG. 8 (c). As shown in FIG. 8 (d), a one-shot pulse having a pulse width slightly wider than the input current is generated at the fall of the input current pulse, and at the same time as the pulse shown in FIG. 8 (c) and FIG. 8 (d). Figure 8 obtained by taking the OR
The control circuit 12 transmits the control signal shown in (e) to the drive circuit 13, and the drive circuit 13 drives and controls the second switching element 10. In such an operating state, the load 8
When the current flowing therethrough is reduced, the pulse width of the drive signal for driving the first switching element 1 is narrowed as shown in FIG. 8A, and the detection circuit 1 is fed as shown in FIG. 8B.
The input current flowing through 1 also decreases. When the input current value shown in FIG. 8 (b) becomes less than the control reference value, one-shot pulse is no longer generated as shown in FIGS. 8 (b) and 8 (b), and the control circuit 12 causes ) As shown in
A signal for turning off the switching element 10 of the driving circuit 1
3 and the drive circuit 13 turns off the second switching element 10 as shown in FIG. 8 (f). When the second switching element 10 is turned off, the signal to the control pole of the semiconductor element 3 with a control pole is cut off as shown in FIG. 8 (g). Therefore, even if the choke coil 6 is cut off, the control pole of the semiconductor element 3 with control pole is not forward biased by the externally connected power supply 9, and the control pole with semiconductor element 3 with control pole is malfunctioned. The breakdown of the semiconductor element 3 is prevented, and the breakdown of the first switching element 1 due to the saturation of the transformer 2 is also prevented. Also,
When the current flowing through the load 8 increases, the pulse width of the drive signal for driving the first switching element 1 becomes wider as shown in FIG. 8A, and the detection circuit as shown in FIG. The input current flowing through 11 also increases. When the input current value shown in FIG. 8 (b) becomes equal to or higher than the control reference value, a one-shot pulse starts to be generated as shown in FIGS. 8 (b) and 8 (b), and the control circuit 12 causes FIG. Signal for turning on the second switching element 10 as shown in FIG.
Then, the drive circuit 13 turns on the second switching element 10 as shown in FIG. When the second switching element 10 is turned on, a signal is transmitted again to the control pole of the semiconductor element 3 with control pole as shown in FIG. 8 (g), and the normal operation state is restored. FIG. 9 is a diagram for explaining another embodiment of the present invention, and FIG. 10 is a diagram for explaining the operation thereof. First, the configuration will be described with reference to FIG. 9. Between the connection point of the secondary winding N 2 of the transformer 2 and the choke coil 6 and the control pole of the semiconductor element 3 with control pole,
The second switching element 10 is connected. The signal for controlling the on / off of the second switching element 10 is the first
Is transmitted from the detection circuit 11 inserted in the control pole of the switching element 1 to the control pole of the second switching element 10 via the drive circuit 13. Next, the operation of this circuit will be described with reference to FIGS. When the first switching element 1 is turned on and a voltage is induced in the secondary winding N 2 of the transformer 2 such that the mark side becomes positive, the parasitic diode 4 of the semiconductor element with control pole, and subsequently the semiconductor element with control pole 3 is turned on to supply energy to the choke coil 6, the capacitor 7 and the load 8. Next, when the first switching element 1 is turned off, a flyback voltage is generated in the secondary winding N 2 of the transformer 2, and this voltage causes the semiconductor element with control pole 3 and the parasitic diode 4 of the semiconductor element with control pole to be generated. It is cut off, the flywheel diode 5 is turned on, and the current of the choke coil 6 is continuously supplied. Next, the first switching element 1 is turned on, and the same operation is repeated thereafter. Energy is also supplied to the load 8 from the externally connected power supply 9. When the current flowing through the load 8 decreases in such an operating state, the pulse width of the drive signal for driving the first switching element 1 becomes narrow as shown in FIG. The detection circuit 11 detects the drive signal with the narrow pulse width shown in FIG. 10A and transmits it to the drive circuit 13, and the drive circuit 13 follows the signal and outputs the second switching element 1
Drive 0. As described above, even when the current flowing through the load 8 decreases, the second switching element 10 is repeatedly turned on and off, so that the signal to the control pole of the semiconductor element with control pole 3 is shown in FIG. As shown in the figure, the semiconductor device 3 with a control electrode is repeatedly turned on and off. Therefore, even if the choke coil 6 is cut off, the external connection power source 9
As a result, the control pole of the semiconductor element with control pole 3 is not in a forward bias state, and the semiconductor element with control pole 3 is prevented from being broken due to malfunction of the semiconductor element with control pole 3.
The destruction of the first switching element 1 due to the saturation of the transformer 2 is also prevented. Further, when the current flowing through the load 8 increases, the pulse width of the drive signal for driving the first switching element 1 becomes wider as shown in FIG. The detection circuit 11 detects the drive signal having the wider pulse width shown in FIG. 10A and transmits it to the drive circuit 13, and the drive circuit 13 drives the second switching element 10 in accordance with this signal. Since the second switching element 10 is repeatedly turned on and off in this manner, the signal to the control pole of the semiconductor element 3 with a control pole becomes as shown in FIG. 10C, and the semiconductor element 3 with a control pole turns on and off. repeat.
【発明の効果】以上述べたように，本発明によれば，並
列接続運転を行っても，軽負荷時に外部接続電源によっ
て制御極付半導体素子の制御極が順バイアス状態になる
ことはなく，制御極付半導体素子の誤動作による制御極
付半導体素子の破壊が防止されると共に，トランスの飽
和による第１のスイッチング素子の破壊も防止される。As described above, according to the present invention, even if the parallel connection operation is performed, the control pole of the semiconductor element with the control pole is not forward biased by the externally connected power source when the load is light. The destruction of the semiconductor element with the control pole due to the malfunction of the semiconductor element with the control pole is prevented, and the destruction of the first switching element due to the saturation of the transformer is also prevented.
【図１】本発明の一実施例を説明するための図である。FIG. 1 is a diagram for explaining an embodiment of the present invention.
【図２】本発明の一実施例を説明するための図である。FIG. 2 is a diagram for explaining an example of the present invention.
【図３】本発明の一実施例を説明するための図である。FIG. 3 is a diagram for explaining an example of the present invention.
【図４】本発明の一実施例を説明するための図である。FIG. 4 is a diagram for explaining an example of the present invention.
【図５】本発明の一実施例を説明するための図である。FIG. 5 is a diagram for explaining one embodiment of the present invention.
【図６】本発明の一実施例を説明するための図である。FIG. 6 is a diagram for explaining an example of the present invention.
【図７】本発明の一実施例を説明するための図である。FIG. 7 is a diagram for explaining an example of the present invention.
【図８】本発明の一実施例を説明するための図である。FIG. 8 is a diagram for explaining an example of the present invention.
【図９】本発明の一実施例を説明するための図である。FIG. 9 is a diagram for explaining an example of the present invention.
【図１０】本発明の一実施例を説明するための図であ
る。FIG. 10 is a diagram for explaining an example of the present invention.
【図１１】従来例を説明するための図である。FIG. 11 is a diagram for explaining a conventional example.
１…第１のスイッチング素子 ２…トランス ３…制御極付半導体素子 ４…制御極付半導体素子の寄生ダイオード ５…フライホイールダイオード ６…チョークコ
イル ７…コンデンサ ８…負荷 ９…外部接続電源 １０…第２のスイ
ッチング素子 １１…検出回路 １２…制御回路 １３…駆動回路DESCRIPTION OF SYMBOLS 1 ... 1st switching element 2 ... Transformer 3 ... Semiconductor element with a control pole 4 ... Parasitic diode of a semiconductor element with a control pole 5 ... Flywheel diode 6 ... Choke coil 7 ... Capacitor 8 ... Load 9 ... External power supply 10 ... 2 switching element 11 ... Detection circuit 12 ... Control circuit 13 ... Drive circuit
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 義雄 東京都豊島区高田１丁目18番１号 オリジ ン電気株式会社内 (72)発明者 村上 直樹 東京都千代田区内幸町１丁目１番６号 日 本電信電話株式会社内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Yoshio Suzuki 1-18-1 Takada, Toshima-ku, Tokyo Inside Origin Electric Co., Ltd. (72) Inventor Naoki Murakami 1-1-6, Uchisaiwaicho, Chiyoda-ku, Tokyo Date Inside Telegraph and Telephone Corporation
Claims (5)
せ，トランスを介して交流電圧を取り出し，該交流電圧
を整流素子で整流し，チョークコイルとコンデンサとで
平滑する回路において， 上記整流素子として制御極付半導体素子を用い，該制御
極付半導体素子の制御信号として第２のスイッチング素
子を介して上記トランスに生ずる電圧を用いると共に，
上記第２のスイッチング素子を制御することにより上記
制御極付半導体素子をオンまたはオフさせることを特徴
とする制御極付半導体素子を用いた整流回路。1. A circuit in which a first switching element is turned on and off, an AC voltage is taken out through a transformer, the AC voltage is rectified by a rectifying element, and smoothed by a choke coil and a capacitor, and the control pole is used as the rectifying element. And a voltage generated in the transformer via the second switching element is used as a control signal for the semiconductor element with a control pole.
A rectifier circuit using a semiconductor element with a control pole, wherein the semiconductor element with a control pole is turned on or off by controlling the second switching element.
駆動信号により上記第２のスイッチング素子を制御する
ことを特徴とする請求項１記載の制御極付半導体素子を
用いた整流回路。2. A rectifier circuit using a semiconductor element with a control electrode according to claim 1, wherein the second switching element is controlled by a drive signal for driving the first switching element.
上記第２のスイッチング素子を制御することを特徴とす
る請求項１記載の制御極付半導体素子を用いた整流回
路。3. A rectifier circuit using a semiconductor element with a control electrode according to claim 1, wherein the second switching element is controlled by a signal obtained by detecting an output current.
検出して得られた信号により上記第２のスイッチング素
子を制御することを特徴とする請求項１記載の制御極付
半導体素子を用いた整流回路。4. The semiconductor device with a control pole according to claim 1, wherein the second switching element is controlled by a signal obtained by detecting the voltage of the secondary winding of the choke coil. There was a rectifier circuit.
上記第２のスイッチング素子を制御することを特徴とす
る請求項１記載の制御極付半導体素子を用いた整流回
路。5. A rectifier circuit using a semiconductor device with a control electrode according to claim 1, wherein the second switching device is controlled by a signal obtained by detecting an input current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17930792A JP3226115B2 (en) | 1992-06-12 | 1992-06-12 | Rectifier circuit using semiconductor element with control pole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17930792A JP3226115B2 (en) | 1992-06-12 | 1992-06-12 | Rectifier circuit using semiconductor element with control pole |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0866023A true JPH0866023A (en) | 1996-03-08 |
| JP3226115B2 JP3226115B2 (en) | 2001-11-05 |
Family
ID=16063544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17930792A Expired - Lifetime JP3226115B2 (en) | 1992-06-12 | 1992-06-12 | Rectifier circuit using semiconductor element with control pole |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3226115B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09322532A (en) * | 1996-05-28 | 1997-12-12 | Origin Electric Co Ltd | Power supply circuit |
| WO2005025043A1 (en) * | 2003-09-02 | 2005-03-17 | Sanken Electric Co., Ltd. | Synchronous commutation dc-dc converter |
| JP2013503427A (en) * | 2009-08-25 | 2013-01-31 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Multichannel lighting unit and driver for supplying current to the light source of the multichannel lighting unit |
| JP2017046437A (en) * | 2015-08-26 | 2017-03-02 | コーセル株式会社 | Switching power supply |
-
1992
- 1992-06-12 JP JP17930792A patent/JP3226115B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09322532A (en) * | 1996-05-28 | 1997-12-12 | Origin Electric Co Ltd | Power supply circuit |
| WO2005025043A1 (en) * | 2003-09-02 | 2005-03-17 | Sanken Electric Co., Ltd. | Synchronous commutation dc-dc converter |
| US7330365B2 (en) | 2003-09-02 | 2008-02-12 | Sanken Electric Co., Ltd. | Synchronous commutation DC-DC converter |
| JP2013503427A (en) * | 2009-08-25 | 2013-01-31 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Multichannel lighting unit and driver for supplying current to the light source of the multichannel lighting unit |
| JP2017046437A (en) * | 2015-08-26 | 2017-03-02 | コーセル株式会社 | Switching power supply |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3226115B2 (en) | 2001-11-05 |
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