JPH086235A - Photomask and pattern forming method using the same - Google Patents

Photomask and pattern forming method using the same

Info

Publication number
JPH086235A
JPH086235A JP15640494A JP15640494A JPH086235A JP H086235 A JPH086235 A JP H086235A JP 15640494 A JP15640494 A JP 15640494A JP 15640494 A JP15640494 A JP 15640494A JP H086235 A JPH086235 A JP H086235A
Authority
JP
Japan
Prior art keywords
photomask
photoresist layer
layer
pattern
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15640494A
Other languages
Japanese (ja)
Inventor
Shoichi Kotani
昭一 児谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP15640494A priority Critical patent/JPH086235A/en
Publication of JPH086235A publication Critical patent/JPH086235A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

PURPOSE:To make it possible to smoothly peel a photomask at the time of peeling this photomask from the front surface of a photoresist layer after bringing the photomask into proximity to the front surface of this photoresist layer and exposing the photoresist layer. CONSTITUTION:The photomask 1 is constructed by providing the rear surface of a transparent substrate 2 with mask patterns 4 in its prescribed region 3 and providing the rear surface of the transparent substrate 2 around the mask patterns 4 with a release layer 5. In such a case, this release, layer 5 is formed thicker than the thickness of the mask patterns 4. Consequently, only the release layer 5 is eventually brought into tight contact with the front surface of the photoresist layer 13 when the photomask 1 is brought into proximity to the front surface of the photoresist layer 13. Then, the photomask 1 is smoothly peeled from the front surface of the photoresist layer 13.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明はフォトマスクおよびそ
れを用いたパターン形成方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask and a pattern forming method using the same.

【0002】[0002]

【従来の技術】例えば、液晶表示パネルには、透明なフ
ィルム基板の上面にITOからなる透明電極を設けたも
のがある。このような液晶表示パネルにおいてフィルム
基板の上面にITOからなる透明電極を形成する方法に
はフォトリソグラフィ方法がある。このフォトリソグラ
フィ方法では、まず、フィルム基板の上面にITO薄膜
を設け、このITO薄膜の上面にフォトレジスト層を設
け、次にフォトマスクを用いてフォトレジスト層を露光
し、次いで現像するとフォトレジスト層から不要な部分
が除去されてレジストパターンが形成され、次にこのレ
ジストパターンをマスクとしてITO薄膜をエッチング
し、これによりITOからなる透明電極をパターン形成
している。
2. Description of the Related Art For example, there is a liquid crystal display panel in which a transparent electrode made of ITO is provided on the upper surface of a transparent film substrate. There is a photolithography method as a method of forming a transparent electrode made of ITO on the upper surface of a film substrate in such a liquid crystal display panel. In this photolithography method, first, an ITO thin film is provided on the upper surface of the film substrate, a photoresist layer is provided on the upper surface of the ITO thin film, then the photoresist layer is exposed using a photomask, and then the photoresist layer is developed. An unnecessary portion is removed to form a resist pattern, and then the ITO thin film is etched by using this resist pattern as a mask, whereby a transparent electrode made of ITO is patterned.

【0003】[0003]

【発明が解決しようとする課題】ところで、フォトマス
クは、一般に、ガラス基板の下面にクロムからなる遮光
パターンを設けた構造となっている。そして、このよう
なフォトマスクをフォトレジスト層の上面に解像度を良
くするために接近させて配置すると、遮光パターンがフ
ォトレジスト層に貼り付いてしまうことがある。このよ
うな場合には、フォトレジスト層からフォトマスクを引
き離すとき、フォトレジスト層が部分的にフォトマスク
に転写されることがあり、ひいては透明電極に断線等が
発生することがあるという問題があった。また、極端な
場合には、フォトマスクがフォトレジスト層から離れな
くなり、以後の工程に支障を来すことがあるという問題
があった。この発明の目的は、フォトレジスト層から円
滑に引き離すことができるフォトマスクおよびそれを用
いたパターン形成方法を提供することにある。
By the way, a photomask generally has a structure in which a light shielding pattern made of chromium is provided on the lower surface of a glass substrate. When such a photomask is arranged close to the upper surface of the photoresist layer to improve the resolution, the light shielding pattern may stick to the photoresist layer. In such a case, when the photomask is separated from the photoresist layer, the photoresist layer may be partially transferred to the photomask, which may lead to disconnection of the transparent electrode. It was Further, in an extreme case, there is a problem that the photomask may not be separated from the photoresist layer, which may interfere with the subsequent steps. An object of the present invention is to provide a photomask which can be smoothly separated from the photoresist layer and a pattern forming method using the photomask.

【0004】[0004]

【課題を解決するための手段】請求項1記載の発明に係
るフォトマスクは、透明基板と、この透明基板の下面の
所定の領域に設けられた遮光パターンと、この遮光パタ
ーンの周囲における前記透明基板の下面に設けられた前
記遮光パターンよりも厚膜の剥離層とを備えたものであ
る。請求項3記載の発明に係るパターン形成方法は、基
板の上面にパターン形成用層を設け、このパターン形成
用層の上面にフォトレジスト層を設け、請求項1または
2記載のフォトマスクの剥離層を前記フォトレジスト層
の上面に密着させ、前記フォトマスクの遮光パターンを
マスクとして前記フォトレジスト層を露光し、次いで現
像することにより前記フォトレジスト層をパターンニン
グしてレジストパターンを形成し、このレジストパター
ンをマスクとして前記パターン形成用層をパターンニン
グしてパターンを形成するようにしたものである。
According to a first aspect of the present invention, there is provided a photomask in which a transparent substrate, a light-shielding pattern provided on a lower surface of the transparent substrate in a predetermined region, and the transparent portion around the light-shielding pattern. A peeling layer having a thicker film than the light shielding pattern provided on the lower surface of the substrate. A pattern forming method according to the invention of claim 3, wherein a pattern forming layer is provided on the upper surface of the substrate, and a photoresist layer is provided on the upper surface of the pattern forming layer, and the release layer of the photomask according to claim 1 or 2. Is adhered to the upper surface of the photoresist layer, the photoresist layer is exposed using the light-shielding pattern of the photomask as a mask, and then developed to pattern the photoresist layer to form a resist pattern. The pattern forming layer is patterned by using the pattern as a mask to form a pattern.

【0005】[0005]

【作用】この発明によれば、遮光パターンの周囲におけ
る透明基板の下面に遮光パターンよりも厚膜の剥離層を
設けているので、フォトマスクをフォトレジスト層の上
面に接近させると、剥離層がフォトレジスト層の上面に
密着し、遮光パターンが密着しないようにすることがで
き、したがってフォトマスクをフォトレジスト層から円
滑に引き離すことができる。
According to the present invention, since the peeling layer which is thicker than the light shielding pattern is provided on the lower surface of the transparent substrate around the light shielding pattern, the peeling layer is formed when the photomask is brought close to the upper surface of the photoresist layer. The light-shielding pattern can be prevented from adhering to the upper surface of the photoresist layer, and thus the photomask can be smoothly separated from the photoresist layer.

【0006】[0006]

【実施例】図1(A)はこの発明の一実施例におけるフ
ォトマスクの下面を示したものである。フォトマスク1
はガラス等からなる透明基板2を備えている。透明基板
2の下面のほぼ中央部の遮光パターン形成領域3にはク
ロム等からなる遮光パターン4(図1(B)参照)が設
けられ、この遮光パターン4の周囲における透明基板2
の下面には遮光パターン4よりも厚膜の剥離層5(図1
(B)参照)が設けられている。剥離層5は、ポリテト
ラフルオロエチレン等よりなるフッ素樹脂フィルムを透
明基板2の下面に接着したもの、あるいはポリテトラフ
ルオロエチレン等よりなるフッ素樹脂材料を透明基板2
の下面に印刷等により塗布したものからなっている。具
体的な厚さ寸法の一例を示すと、遮光パターン4は50
0〜1000Å程度、剥離層5は30〜200μm程度
となっている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1A shows the lower surface of a photomask according to an embodiment of the present invention. Photo mask 1
Is provided with a transparent substrate 2 made of glass or the like. A light-shielding pattern 4 (see FIG. 1B) made of chrome or the like is provided in a light-shielding pattern forming region 3 in a substantially central portion of the lower surface of the transparent substrate 2, and the transparent substrate 2 around the light-shielding pattern 4 is provided.
The peeling layer 5 having a thicker film than the light shielding pattern 4 (see FIG.
(See (B)). The release layer 5 is obtained by adhering a fluororesin film made of polytetrafluoroethylene or the like to the lower surface of the transparent substrate 2, or a fluororesin material made of polytetrafluoroethylene or the like in the transparent substrate 2.
The bottom surface of the is applied by printing or the like. As an example of a specific thickness dimension, the light shielding pattern 4 has 50
The peeling layer 5 has a thickness of about 0 to 1000 Å and a thickness of about 30 to 200 μm.

【0007】次に、このフォトマスク1を用いたパター
ン形成方法について図1(B)を参照しながら説明す
る。このパターン形成方法では、まず、フィルム基板1
1の上面にITO薄膜(パターン形成用層)12を設
け、このITO薄膜12の上面にフォトレジスト層13
を設ける。次に、フォトレジスト層13の上面にフォト
マスク1を接近させる。この場合、剥離層5の厚さが遮
光パターン4の厚さよりも厚くなっているので、剥離層
5はフォトレジスト層13の上面に密着するが、遮光パ
ターン4はフォトレジスト層13の上面に密着しないよ
うにすることができる。
Next, a pattern forming method using this photomask 1 will be described with reference to FIG. In this pattern forming method, first, the film substrate 1
1. An ITO thin film (pattern forming layer) 12 is provided on the upper surface of 1, and a photoresist layer 13 is provided on the upper surface of the ITO thin film 12.
To provide. Next, the photomask 1 is brought close to the upper surface of the photoresist layer 13. In this case, since the peeling layer 5 is thicker than the light shielding pattern 4, the peeling layer 5 is in close contact with the upper surface of the photoresist layer 13, but the light shielding pattern 4 is in close contact with the upper surface of the photoresist layer 13. You can choose not to.

【0008】次に、フォトマスク1の遮光パターン4を
マスクとしてフォトレジスト層13を露光する。次に、
フォトマスク1をフォトレジスト層13の上面から引き
離す。この場合、フォトレジスト層13の上面にはフォ
トマスク1の剥離層5のみが密着されており、かつ剥離
層5を構成するフッ素樹脂はフォトレジストに対する剥
離性が良いので、フォトレジスト層13の上面からフォ
トマスク1を円滑に引き離すことができる。この結果、
フォトレジスト層13が部分的にフォトマスク1に転写
されたり、フォトマスク1がフォトレジスト層13から
離れなくなったりすることがない。
Next, the photoresist layer 13 is exposed using the light shielding pattern 4 of the photomask 1 as a mask. next,
The photomask 1 is separated from the upper surface of the photoresist layer 13. In this case, only the peeling layer 5 of the photomask 1 is adhered to the upper surface of the photoresist layer 13, and the fluororesin forming the peeling layer 5 has a good peeling property with respect to the photoresist. The photomask 1 can be smoothly separated from the. As a result,
The photoresist layer 13 will not be partially transferred to the photomask 1, and the photomask 1 will not be separated from the photoresist layer 13.

【0009】次に、現像するとフォトレジスト層13か
ら不要な部分が除去されてレジストパターンが形成され
る。次に、このレジストパターンをマスクとしてITO
薄膜12をエッチングしてパターンニングすると、IT
Oからなる透明電極がパターン形成される。
Next, after development, unnecessary portions are removed from the photoresist layer 13 to form a resist pattern. Next, using this resist pattern as a mask, ITO
When the thin film 12 is etched and patterned, IT
A transparent electrode made of O is patterned.

【0010】[0010]

【発明の効果】以上説明したように、この発明によれ
ば、遮光パターンの周囲における透明基板の下面に遮光
パターンよりも厚膜の剥離層を設けているので、フォト
マスクをフォトレジスト層の上面に接近させると、剥離
層がフォトレジスト層の上面に密着し、遮光パターンが
密着しないようにすることができ、したがってフォトマ
スクをフォトレジスト層から円滑に引き離すことができ
る。
As described above, according to the present invention, since the peeling layer which is thicker than the light shielding pattern is provided on the lower surface of the transparent substrate around the light shielding pattern, the photomask is used as the upper surface of the photoresist layer. The peeling layer can be brought into close contact with the upper surface of the photoresist layer and the light shielding pattern can be prevented from being brought into close contact with the film, so that the photomask can be smoothly separated from the photoresist layer.

【図面の簡単な説明】[Brief description of drawings]

【図1】(A)はこの発明の一実施例におけるフォトマ
スクの底面図、(B)はフォトマスクを用いたパターン
形成方法を説明するために示す断面図。
FIG. 1A is a bottom view of a photomask according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view shown for explaining a pattern forming method using the photomask.

【符号の説明】[Explanation of symbols]

1 フォトマスク 2 透明基板 4 遮光パターン 5 剥離層 11 フィルム基板 12 ITO薄膜(パターン形成用層) 13 フォトレジスト層 DESCRIPTION OF SYMBOLS 1 Photomask 2 Transparent substrate 4 Light-shielding pattern 5 Release layer 11 Film substrate 12 ITO thin film (pattern formation layer) 13 Photoresist layer

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 透明基板と、この透明基板の下面の所定
の領域に設けられた遮光パターンと、この遮光パターン
の周囲における前記透明基板の下面に設けられた前記遮
光パターンよりも厚膜の剥離層とを備えたことを特徴と
するフォトマスク。
1. A transparent substrate, a light-shielding pattern provided in a predetermined region on the lower surface of the transparent substrate, and a thick film peeling around the light-shielding pattern, which is thicker than the light-shielding pattern provided on the lower surface of the transparent substrate. A photomask having a layer.
【請求項2】 前記剥離層はフッ素樹脂からなることを
特徴とする請求項1記載のフォトマスク。
2. The photomask according to claim 1, wherein the peeling layer is made of a fluororesin.
【請求項3】 基板の上面にパターン形成用層を設け、
このパターン形成用層の上面にフォトレジスト層を設
け、請求項1または2記載のフォトマスクの剥離層を前
記フォトレジスト層の上面に密着させ、前記フォトマス
クの遮光パターンをマスクとして前記フォトレジスト層
を露光し、次いで現像することにより前記フォトレジス
ト層をパターンニングしてレジストパターンを形成し、
このレジストパターンをマスクとして前記パターン形成
用層をパターンニングしてパターンを形成することを特
徴とするパターン形成方法。
3. A pattern forming layer is provided on the upper surface of the substrate,
A photoresist layer is provided on the upper surface of the pattern forming layer, and the release layer of the photomask according to claim 1 is brought into close contact with the upper surface of the photoresist layer, and the light shielding pattern of the photomask is used as a mask to form the photoresist layer. Is exposed to light and then developed to form a resist pattern by patterning the photoresist layer,
A pattern forming method comprising patterning the pattern forming layer using the resist pattern as a mask to form a pattern.
JP15640494A 1994-06-16 1994-06-16 Photomask and pattern forming method using the same Pending JPH086235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15640494A JPH086235A (en) 1994-06-16 1994-06-16 Photomask and pattern forming method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15640494A JPH086235A (en) 1994-06-16 1994-06-16 Photomask and pattern forming method using the same

Publications (1)

Publication Number Publication Date
JPH086235A true JPH086235A (en) 1996-01-12

Family

ID=15627008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15640494A Pending JPH086235A (en) 1994-06-16 1994-06-16 Photomask and pattern forming method using the same

Country Status (1)

Country Link
JP (1) JPH086235A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230187A (en) * 2000-02-18 2001-08-24 Motorola Inc Method for lithographic printing by using low surface energy layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230187A (en) * 2000-02-18 2001-08-24 Motorola Inc Method for lithographic printing by using low surface energy layer

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