JPH0855811A - Vertical furnace - Google Patents

Vertical furnace

Info

Publication number
JPH0855811A
JPH0855811A JP21039494A JP21039494A JPH0855811A JP H0855811 A JPH0855811 A JP H0855811A JP 21039494 A JP21039494 A JP 21039494A JP 21039494 A JP21039494 A JP 21039494A JP H0855811 A JPH0855811 A JP H0855811A
Authority
JP
Japan
Prior art keywords
heater
heat insulating
hole
insulating plate
reaction tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21039494A
Other languages
Japanese (ja)
Other versions
JP3636378B2 (en
Inventor
Eiji Hosaka
英二 保坂
Hideki Kaihatsu
秀樹 開発
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP21039494A priority Critical patent/JP3636378B2/en
Publication of JPH0855811A publication Critical patent/JPH0855811A/en
Application granted granted Critical
Publication of JP3636378B2 publication Critical patent/JP3636378B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To provide a vertical furnace whose interior can be efficiently cooled while the reduction of the heat insulation and generation of mottles are prevented. CONSTITUTION:A vertical furnace has a reaction tube 3 for housing substrates 5 to be treated and tubular heater 1 disposed around the tube 3 with a gap. The heater heats the substrates 5 put in the tube 3 to treat them. A lower layer heat insulated plate 18 having a hole 20 and upper layer heat insulated plate 19 having a groove 21 continuing to the side face from a position corresponding to the hole 20 are laminated to form a top plate 17 which closes the upper end opening of the heater 1, thereby forming a heat radiating passage with the hole 20 and groove 21 at the top end of the heater 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体製造装置における
縦型炉に関し、特に、炉内温度を迅速に低下させること
ができる縦型炉に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical furnace in a semiconductor manufacturing apparatus, and more particularly to a vertical furnace capable of rapidly lowering the temperature inside the furnace.

【0002】[0002]

【従来の技術】半導体製造においては、ガラス等の基板
に加熱下で処理を施すことが行われる。例えば、ガラス
基板上に薄膜を形成するCVD装置においては、縦型の
反応炉に基板を収容して反応ガスを供給しつつ加熱し、
基板上に薄膜を気相成長させている。
2. Description of the Related Art In semiconductor manufacturing, a substrate such as glass is processed while being heated. For example, in a CVD apparatus for forming a thin film on a glass substrate, the substrate is housed in a vertical reaction furnace and heated while supplying a reaction gas,
A thin film is vapor-deposited on a substrate.

【0003】従来の縦型炉は、図5に示すように、発熱
体を有した筒状のヒータ1と、ヒータ1の内部に隙間を
もって収容された均熱管2と、均熱管2の内部に隙間を
もって収容された反応管3と、反応管3内に処理対象の
基板5を保持するボート6とを備えている。ボート6は
基板5を水平状態で隙間をもって多段に装填でき、この
状態で複数枚の基板5を反応管3内で保持する。ボート
6はボートキャップ7を介して図外のエレベータ上に載
置されており、このエレベータにより昇降可能となって
いる。したがって、基板5の反応管3内への装填および
反応管3からの取り出しはエレベータの作動により行わ
れる。
As shown in FIG. 5, a conventional vertical furnace has a cylindrical heater 1 having a heating element, a soaking tube 2 housed in the heater 1 with a gap, and a soaking tube 2 inside. The reaction tube 3 accommodated with a gap is provided, and the boat 6 that holds the substrate 5 to be processed in the reaction tube 3. The boat 6 can load the substrates 5 in multiple stages in a horizontal state with a gap, and holds a plurality of substrates 5 in the reaction tube 3 in this state. The boat 6 is placed on an elevator (not shown) via a boat cap 7, and can be moved up and down by this elevator. Therefore, the loading of the substrate 5 into the reaction tube 3 and the removal from the reaction tube 3 are performed by the operation of the elevator.

【0004】ヒータ1はその上端の開口を断熱板8で塞
がれており、断熱板8には図6に示すように溝9が形成
されている。したがって、この溝9によってヒータ1の
内部と外部とを連通する通路が形成されており、この通
路には開閉可能なダンパー10を備えた放熱管11を介
してラジエータ12及び冷却ファン13が接続されてい
る。
The heater 1 has an opening at its upper end closed by a heat insulating plate 8, and a groove 9 is formed in the heat insulating plate 8 as shown in FIG. Therefore, the groove 9 forms a passage that connects the inside and the outside of the heater 1, and the radiator 12 and the cooling fan 13 are connected to this passage through the heat radiating pipe 11 having the damper 10 that can be opened and closed. ing.

【0005】反応管3に装入した基板5への薄膜の形成
は、ヒータ1の発熱体を発熱させて均熱管2を介して反
応管3を加熱し、反応管3内に反応ガスを導入するとと
もに反応管3内を排気して、基板5の表面に薄膜を生成
させることにより行われる。そして、成膜された基板5
の取り出しは、ヒータ1による加熱を停止し、ダンパー
10を開けるとともに冷却ファン13を作動させてヒー
タ1内の熱せられた空気を溝9から成る通路及びラジエ
ータ12を介して外部へ放出し、これによって、反応管
3内の温度を所定の温度まで低下させた後に、エレベー
タを作動させてボート6を反応管3から引き出すことに
より行う。
To form a thin film on the substrate 5 charged in the reaction tube 3, the heating element of the heater 1 is heated to heat the reaction tube 3 through the soaking tube 2, and the reaction gas is introduced into the reaction tube 3. At the same time, the reaction tube 3 is evacuated to form a thin film on the surface of the substrate 5. And the substrate 5 on which the film is formed
The heating of the heater 1 is stopped, the damper 10 is opened, and the cooling fan 13 is operated to release the heated air in the heater 1 to the outside through the passage including the groove 9 and the radiator 12, By lowering the temperature in the reaction tube 3 to a predetermined temperature, the elevator is operated to pull out the boat 6 from the reaction tube 3.

【0006】[0006]

【発明が解決しようとする課題】上記した従来の縦型炉
にあっては、図6に示すように、ヒータ1内の放熱を行
うための通路は断熱板8を単に切り欠いた溝9で形成さ
れていたことから、溝9の部分では他の部分より断熱板
8の厚さが薄くなり、ヒータ1の天井部分での断熱性が
部分的に低下してしまっていた。このため、ヒータ1に
よる炉内の加熱効率が低下して基板の加熱処理における
スループットが低下したり、炉内の断熱状態に斑が生じ
て均一な加熱温度を実現することが困難な場合があっ
た。
In the above-mentioned conventional vertical furnace, as shown in FIG. 6, the passage for radiating heat in the heater 1 is a groove 9 formed by simply cutting out the heat insulating plate 8. Since the heat insulating plate 8 was formed, the heat insulating plate 8 was thinner in the groove 9 portion than in other portions, and the heat insulating property in the ceiling portion of the heater 1 was partially deteriorated. Therefore, the heating efficiency in the furnace by the heater 1 may be lowered, the throughput in the heat treatment of the substrate may be lowered, or the heat insulating state in the furnace may be uneven to make it difficult to realize a uniform heating temperature. It was

【0007】また、図5に示すように、溝9から成る放
熱用の通路はヒータ1の上端部の隅に開口しているた
め、ヒータ1内の熱せられた空気が冷却ファン13によ
って均一に吸い出されず、炉内の冷却効率が低下して基
板処理におけるスループットが低下してしまうばかり
か、炉内温度の不均一によって熱処理された基板へも悪
影響を与えてしまう虞もあった。なお、放熱用の通路を
ヒータ1の上端の中央部に開口させるようにすれば冷却
時の不具合は解決できるが、このようにした場合には、
断熱板8に溝9が長く延在して形成されることとなるた
め、上記の断熱性の低下や斑が更に一層顕著になるとい
う新たな問題が生ずる。
Further, as shown in FIG. 5, since the passage for heat dissipation, which is formed by the groove 9, is opened at the corner of the upper end portion of the heater 1, the heated air in the heater 1 is uniformly distributed by the cooling fan 13. Not being sucked out, the cooling efficiency in the furnace is lowered and the throughput in the substrate processing is lowered, and also the heat-treated substrate may be adversely affected due to the uneven temperature in the furnace. It should be noted that if a passage for heat dissipation is opened in the central portion of the upper end of the heater 1, the problem at the time of cooling can be solved, but in this case,
Since the groove 9 is formed to extend in the heat insulating plate 8 for a long time, a new problem arises that the above-mentioned deterioration of the heat insulating property and the unevenness become more remarkable.

【0008】本発明は上記従来の事情に鑑みなされたも
ので、炉の断熱性の低下や斑の発生を防止しつつ、炉内
を効率良く冷却することができる縦型炉を提供すること
を目的とする。
The present invention has been made in view of the above-mentioned conventional circumstances, and it is an object of the present invention to provide a vertical furnace capable of efficiently cooling the inside of the furnace while preventing deterioration of the heat insulating property of the furnace and generation of spots. To aim.

【0009】[0009]

【課題を解決するための手段】上記目的を達成するた
め、本発明の縦型炉は、処理対象の基板を収容する反応
管と、反応管の周囲に隙間をもって設けられた筒状のヒ
ータとを有し、ヒータによって反応管に収容した基板を
加熱して処理する半導体製造装置の縦型炉において、通
孔が形成された下層側断熱板と、前記通孔に対応する位
置から側面まで連続する溝が形成された上層側断熱板と
を重ねて成る天板により前記ヒータの上端開口を塞ぎ、
当該ヒータの上端に該通孔と該溝とから成る放熱用の通
路を形成したことを特徴とする。
In order to achieve the above object, the vertical furnace of the present invention comprises a reaction tube for accommodating a substrate to be processed, and a cylindrical heater provided around the reaction tube with a gap. In a vertical furnace of a semiconductor manufacturing apparatus that heats and processes a substrate accommodated in a reaction tube by a heater, a lower layer side heat insulating plate in which a through hole is formed and a position from a position corresponding to the through hole to a side surface are continuous. The upper opening of the heater is closed by a top plate formed by stacking an upper heat insulating plate on which a groove is formed,
It is characterized in that a passage for radiating heat, which is composed of the through hole and the groove, is formed at the upper end of the heater.

【0010】[0010]

【作用】本発明の縦型炉によると、ヒータはその上端開
口を下層側断熱板と上層側断熱板とを積層した天板によ
って塞がれており、ヒータ内の熱せられた空気は下層側
断熱板の通孔から上層側断熱板の溝を通って炉外に排出
される。そして、本発明の縦型炉では、ヒータの天井部
分の断熱性を低下させる原因となる溝を下層側断熱板が
覆う構造となるため、ヒータの天井部分を成す天板全体
としては部分的な断熱性の低下が防止される。このよう
に溝による断熱性への影響が防止されるため、溝を比較
的長く延在させて下層側断熱板の通孔の位置を天井部分
の中央に設定することができ、ヒータ内の熱せられた空
気を均一に排気させて、炉内を均一且つ効率良く冷却す
ることができる。
According to the vertical furnace of the present invention, the heater has its upper end opening closed by the top plate in which the lower layer side heat insulating plate and the upper layer side heat insulating plate are laminated, and the heated air in the heater is lower side. The heat is discharged from the through hole of the heat insulating plate to the outside of the furnace through the groove of the upper heat insulating plate. Further, in the vertical furnace of the present invention, since the lower heat insulating plate covers the groove that causes the lowering of the heat insulating property of the ceiling part of the heater, the whole top plate forming the ceiling part of the heater is partially covered. A decrease in heat insulation is prevented. In this way, since the influence of the groove on the heat insulation is prevented, it is possible to extend the groove relatively long and set the position of the through hole of the lower layer side heat insulating plate to the center of the ceiling part, and to heat the inside of the heater. The air can be exhausted uniformly to cool the inside of the furnace uniformly and efficiently.

【0011】[0011]

【実施例】本発明の一実施例に係る縦型炉を図面を参照
して説明する。なお、前述した従来例と同一部分には図
中に同一符号を付して説明する。本実施例の縦型反応炉
は、図1に示すように、発熱体1aを有した円筒状のヒ
ータ1と、ヒータ1の内部に隙間をもって収容された円
筒状の均熱管2と、均熱管2の内部に隙間をもって収容
された円筒状の反応管3と、反応管3内に処理対象の基
板5を保持するボート6とを備えている。反応管3は基
板5を収容する反応室を画成しており、反応管3にはガ
ス導入管15が連通され、ガス導入管15には図外の反
応ガス供給源が接続されている。また、反応管3の下端
部には排気管16が接続されており、反応室内の排気を
行っている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS A vertical furnace according to an embodiment of the present invention will be described with reference to the drawings. The same parts as those of the above-mentioned conventional example will be described with the same reference numerals in the drawings. As shown in FIG. 1, the vertical reactor of this embodiment includes a cylindrical heater 1 having a heating element 1a, a cylindrical heat equalizing tube 2 housed in the heater 1 with a gap, and a heat equalizing tube. The reaction tube 3 has a cylindrical reaction tube 3 accommodated therein with a gap, and a boat 6 for holding a substrate 5 to be processed in the reaction tube 3. The reaction tube 3 defines a reaction chamber that accommodates the substrate 5. The reaction tube 3 is connected to a gas introduction tube 15, and the gas introduction tube 15 is connected to a reaction gas supply source (not shown). An exhaust pipe 16 is connected to the lower end of the reaction tube 3 to exhaust the reaction chamber.

【0012】ヒータ1はその上端の開口を天板17で塞
がれており、この天板17は図2に示すように下層側断
熱板18と上層側断熱板19とを重ね合わせた構造とな
っている。ヒータの上端に当接して設けられる下層側断
熱板18には円形の通孔20が形成されており、この通
孔20は下層側断熱板18の中央(すなわち、ヒータ1
の中心軸上)に位置している。また、下層側断熱板18
の上に重ねて設けられる上層側断熱板19には溝21が
形成されており、この溝21は通孔20に対応する断熱
板19の中央位置から側面まで連続し、溝21の端で断
熱板19の側面を切り欠いている。
The upper end of the heater 1 is closed by a top plate 17. The top plate 17 has a structure in which a lower heat insulating plate 18 and an upper heat insulating plate 19 are superposed as shown in FIG. Has become. A circular through hole 20 is formed in the lower heat insulating plate 18 provided in contact with the upper end of the heater, and the through hole 20 is located at the center of the lower heat insulating plate 18 (that is, the heater 1
It is located on the central axis of. In addition, the lower heat insulating plate 18
Grooves 21 are formed in the upper heat insulating plate 19 which is provided on the upper side of the heat insulating plate 19. The groove 21 is continuous from the center position of the heat insulating plate 19 corresponding to the through hole 20 to the side surface, and heat is insulated at the end of the groove 21. The side surface of the plate 19 is cut away.

【0013】したがって、これら下層側断熱板18と上
層側断熱板19とを重ね合わせると通孔20と溝21と
が連通し、この結果、これら通孔20と溝21とによっ
て天板17にはヒータ1の内部と外部とを結ぶ通路が形
成されている。そして、この通路には開閉可能なダンパ
ー10を備えた放熱管11を介してラジエータ12及び
冷却ファン13が接続されており、この通路を通してヒ
ータ1内の熱せられた空気が排出される。
Therefore, when the lower layer side heat insulating plate 18 and the upper layer side heat insulating plate 19 are superposed, the through hole 20 and the groove 21 communicate with each other, and as a result, the through hole 20 and the groove 21 cause the top plate 17 to be connected. A passage that connects the inside and the outside of the heater 1 is formed. A radiator 12 and a cooling fan 13 are connected to this passage through a heat radiating pipe 11 having a damper 10 that can be opened and closed, and the heated air in the heater 1 is discharged through this passage.

【0014】また、ヒータ1を基台22上に支持してい
る円環状のベース23には図3に示すように複数の溝2
4が切り欠いて形成されており、この基台22にヒータ
1の下端が嵌合した状態では、溝24によってヒータ1
の内部と外部とを連通する通路が形成されている。
Further, as shown in FIG. 3, a plurality of grooves 2 are formed in an annular base 23 supporting the heater 1 on the base 22.
4 is formed by cutting out, and when the lower end of the heater 1 is fitted in the base 22, the heater 1 is formed by the groove 24.
A passage that connects the inside and the outside of the is formed.

【0015】反応管4に装入した基板6への薄膜の形成
は、従来と同様に、ヒータ1の発熱体1aを発熱させて
均熱管2を介して反応管3を加熱し、反応ガス供給管1
5を介して反応管3内に反応ガスを導入するとともに、
排気管16を介して反応管4内を排気して、基板5の表
面に薄膜を生成させることにより行われる。このヒータ
1による加熱に際して、ヒータ1の上端開口を塞いでい
る天板17は溝21を下層側断熱板18が覆う構造であ
ることから、通孔20をヒータ1の中心軸上に設定する
ために溝21を比較的長く延在させてあっても、天板1
7全体としては部分的な断熱性の低下が防止されてお
り、ヒータ1により炉内は均一且つ効率的に加熱され
る。
The thin film is formed on the substrate 6 charged in the reaction tube 4 by heating the heating element 1a of the heater 1 to heat the reaction tube 3 through the soaking tube 2 and supplying the reaction gas, as in the conventional case. Tube 1
While introducing the reaction gas into the reaction tube 3 via 5,
The reaction tube 4 is evacuated through the exhaust pipe 16 to form a thin film on the surface of the substrate 5. When heating by the heater 1, the ceiling plate 17 that closes the upper end opening of the heater 1 has a structure in which the lower layer side heat insulating plate 18 covers the groove 21, so that the through hole 20 is set on the central axis of the heater 1. Even if the groove 21 is extended relatively long, the top plate 1
As a whole, a partial decrease in heat insulating property is prevented, and the heater 1 uniformly and efficiently heats the inside of the furnace.

【0016】上記の成膜処理が終了すると、排気管16
からの排気を続行した状態でヒータ1による加熱を停止
し、反応管3内の熱せられた雰囲気を外部へ排出するこ
とにより、反応管3内の温度を低下させる。更にこれと
同時に、ダンパー10を開けるとともに冷却ファン13
を作動させ、炉外からの空気を溝24からなる吸気用の
通路から導入してヒータ1と均熱管2との間の隙間を通
して下端から上方へ流し、ヒータ1内の熱せられた空気
を通孔20及び溝21から成る放熱用の通路並びにラジ
エータ12を介して外部へ放出して、ヒータ1内の温度
も低下させ、これによっても、反応管3内の温度を低下
させる。
When the above film forming process is completed, the exhaust pipe 16
The heating by the heater 1 is stopped while the exhaust from the chamber is continued, and the heated atmosphere in the reaction tube 3 is discharged to the outside, thereby lowering the temperature in the reaction tube 3. At the same time, the damper 10 is opened and the cooling fan 13 is opened.
The air from the outside of the furnace is introduced from the intake passage formed by the groove 24 and flows upward from the lower end through the gap between the heater 1 and the heat equalizing tube 2, and the heated air in the heater 1 is passed through. The heat is released to the outside via the radiator 12 including the holes 20 and the grooves 21 and the radiator 12 to lower the temperature in the heater 1 as well, which also lowers the temperature in the reaction tube 3.

【0017】そして、反応管3内の温度を所定の温度ま
で低下させた後に、エレベータを作動させてボート6を
反応管3から引き出し、成膜された基板5を反応管3か
ら取り出す。上記した通孔20からの排気による冷却に
際して、通孔20はヒータ1の中心軸上に位置している
ことから、ヒータ1内の熱せられた空気はこの通孔20
から均一に排気されるため、炉内は均一且つ効率的に冷
却される。このため、反応管3の温度が迅速に低下し、
基板5の温度が反応炉から取り出し得る所定温度まで迅
速に低下する。
After the temperature inside the reaction tube 3 is lowered to a predetermined temperature, the elevator is operated to pull out the boat 6 from the reaction tube 3 and take out the film-formed substrate 5 from the reaction tube 3. Since the through hole 20 is located on the central axis of the heater 1 during the cooling by the exhaust air from the above through hole 20, the heated air in the heater 1 will be in this through hole 20.
Since the gas is uniformly exhausted from the inside, the inside of the furnace is cooled uniformly and efficiently. Therefore, the temperature of the reaction tube 3 rapidly decreases,
The temperature of the substrate 5 rapidly drops to a predetermined temperature that can be taken out of the reaction furnace.

【0018】図4には本発明の他の一実施例に係る縦型
炉を示してある。なお、前述の実施例と同一部分には同
一符号を付して重複する説明は省略する。本実施例は、
上端が閉塞された均熱管2に代えて上端が開口した均熱
管32を備えた縦型炉に本発明を適用したものであり、
均熱管32をその上端が下層側断熱板18の下面に当接
させて設け、均熱管32の内部の熱せられた空気を通孔
20から炉外へ放出するようにしている。なお、前述の
実施例と同様に、均熱管32の下端部には炉外から空気
を導入するための吸気用通路が設けられており、通孔2
0からの排気に合わせてこの吸気用通路から均熱管32
内に炉外から比較的低温な空気が導入される。
FIG. 4 shows a vertical furnace according to another embodiment of the present invention. The same parts as those in the above-described embodiment are designated by the same reference numerals, and the duplicated description will be omitted. In this example,
The present invention is applied to a vertical furnace provided with a soaking tube 32 having an open upper end instead of the soaking tube 2 having an upper end closed.
The soaking tube 32 is provided such that its upper end is in contact with the lower surface of the lower layer side heat insulating plate 18, and the heated air inside the soaking tube 32 is discharged from the hole 20 to the outside of the furnace. In addition, as in the above-described embodiment, an intake passage for introducing air from outside the furnace is provided at the lower end of the soaking tube 32, and the through hole 2
In accordance with the exhaust from 0, the soaking pipe 32 from this intake passage
A relatively low temperature air is introduced from the outside of the furnace.

【0019】したがって、本実施例では、前述の実施例
を同様な効果を奏するに加え、温度を低下させる対象で
ある基板5に近い空間(すなわち、反応管3と均熱管2
との隙間)から熱せられた空気を放出できるので、より
一層効率的に基板5を冷却することができる。
Therefore, in this embodiment, in addition to the same effects as the above-described embodiments, a space close to the substrate 5 which is the target of temperature reduction (that is, the reaction tube 3 and the soaking tube 2).
Since the heated air can be released from the (gap between the substrate) and the substrate 5, the substrate 5 can be cooled more efficiently.

【0020】なお、上記した各実施例では均熱管2を備
えた縦型炉を示したが、本発明は均熱管を有しない縦型
炉に適用してもよく、上記した各実施例と同様な効果を
得ることができる。また、上記した各実施例では円筒状
のヒータ1を示したが、本発明では、これに限らず、種
々な断面形状の筒型ヒータに適用することができる。ま
た、下層側断熱板18及び上層側断熱板19の形状も、
上記の実施例のように円板状に限られず、ヒータ1の上
端開口を塞げるように、ヒータの断面形状に応じて種々
に設定される。
In each of the above-mentioned embodiments, the vertical furnace provided with the soaking tube 2 is shown. However, the present invention may be applied to a vertical furnace having no soaking tube, as in each of the above-mentioned embodiments. It is possible to obtain various effects. Further, although the cylindrical heater 1 is shown in each of the above-described embodiments, the present invention is not limited to this, and can be applied to tubular heaters having various sectional shapes. Further, the shapes of the lower layer side heat insulating plate 18 and the upper layer side heat insulating plate 19 are also
The shape is not limited to the disk shape as in the above-described embodiment, but may be variously set according to the cross-sectional shape of the heater so as to close the upper end opening of the heater 1.

【0021】また、下層側断熱板18に形成される通孔
20は複数形成するようにしてもよく、通孔20の形状
も円形以外の形状としてもよい。更に、通孔20は必ず
下層側断熱板18の中央に設けなくともよく、例えば、
下層側断熱板18と中心を同じくして複数の通孔を円環
状や放射状に配設するようにしてもよい。なお、下層側
断熱板18の中央のように、ヒータ1の中心軸に対して
対象な位置に通孔を形成すれば、ヒータ内の均一な冷却
を実現することができるが、本発明では、通孔20を中
央からずれた隅の位置に設けたとしても、下層側断熱板
18と上層側断熱板19との積層構造により部分的な断
熱性の低下による弊害を防止することができるので、通
孔20を下層側断熱板18の中央からずれた位置に設け
ることも可能である。
A plurality of through holes 20 may be formed in the lower heat insulating plate 18, and the through holes 20 may have a shape other than a circular shape. Furthermore, the through hole 20 does not necessarily have to be provided in the center of the lower heat insulating plate 18, and for example,
A plurality of through holes may be arranged annularly or radially with the same center as the lower layer side heat insulating plate 18. It should be noted that if a through hole is formed at a target position with respect to the central axis of the heater 1 like the center of the lower layer side heat insulating plate 18, uniform cooling inside the heater can be realized. Even if the through-hole 20 is provided at a corner position deviated from the center, the laminated structure of the lower-layer side heat insulating plate 18 and the upper-layer side heat insulating plate 19 can prevent an adverse effect due to a partial decrease in heat insulating property. It is also possible to provide the through hole 20 at a position displaced from the center of the lower heat insulating plate 18.

【0022】また、上層側断熱板19に形成される溝2
1は通孔20に連通すればよいので、も通孔20に数や
位置に応じて種々に変更されるものであり、形成する数
も1つに限らず状況に応じて複数形成することもでき
る。また、基台23の溝24から成る吸気用の通路のよ
うに、冷却時にヒータ1の内部に炉外から空気を導入す
る通路は種々な態様で形成することができ、要は、通孔
20からの排気に合わせて外部から空気を導入できる通
路がどのような態様にしても存在すればよい。
Further, the groove 2 formed in the upper heat insulating plate 19
Since 1 may be communicated with the through hole 20, it may be variously changed depending on the number and position of the through holes 20, and the number to be formed is not limited to one, and a plurality may be formed depending on the situation. it can. Further, a passage for introducing air from the outside of the furnace into the heater 1 at the time of cooling, such as an intake passage formed by the groove 24 of the base 23, can be formed in various ways. It suffices that there is a passage in which air can be introduced from the outside in accordance with the exhaust air from any form.

【0023】[0023]

【発明の効果】以上説明したように、本発明の縦型炉に
よると、通孔が形成された下層側断熱板と溝が形成され
た上層側断熱板とを重ねて成る天板によりヒータの上端
開口を塞ぎ、ヒータの上端に通孔と溝とから成る放熱用
の通路を形成したため、ヒータの天井部分を成す天板全
体としては部分的な断熱性の低下が防止されて、炉内を
均一且つ効率的に加熱することができるとともに、溝を
比較的長く延在させて下層側断熱板の通孔の位置をヒー
タの天井部分の中央に設定することが可能となり、ヒー
タ内の熱せられた空気を均一に排気させて、炉内を均一
且つ効率良く冷却することができる。このため、縦型炉
による基板の処理能率が向上し、スループットが向上す
る。また、ヒータの天板を下層側断熱板と上層側断熱板
との積層構造としたため、ヒータの天井部分に放熱用の
通路を容易に形成することができ、上記の効果を奏する
縦型炉を低コスト且つ容易に実現することができる。
As described above, according to the vertical furnace of the present invention, the heater is provided by the top plate formed by stacking the lower layer side heat insulating plate having the through holes and the upper layer side heat insulating plate having the grooves. Since the upper end opening was closed and a passage for heat dissipation consisting of a through hole and a groove was formed at the upper end of the heater, partial lowering of the heat insulating property of the entire top plate forming the ceiling part of the heater was prevented, and the inside of the furnace was prevented. In addition to being able to heat uniformly and efficiently, it is possible to extend the groove relatively long and set the position of the through hole of the lower layer side heat insulating plate at the center of the ceiling part of the heater. The air can be exhausted uniformly to cool the inside of the furnace uniformly and efficiently. Therefore, the processing efficiency of the substrate by the vertical furnace is improved, and the throughput is improved. Further, since the top plate of the heater has a laminated structure of the lower heat insulating plate and the upper heat insulating plate, a passage for heat dissipation can be easily formed in the ceiling portion of the heater, and a vertical furnace having the above effect can be obtained. It can be easily realized at low cost.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例に係る縦型炉を示す断面図で
ある。
FIG. 1 is a sectional view showing a vertical furnace according to an embodiment of the present invention.

【図2】本発明の一実施例に係る天板を示す分解斜視図
である。
FIG. 2 is an exploded perspective view showing a top plate according to an embodiment of the present invention.

【図3】本発明の一実施例に係るヒータ支持部を示す分
解斜視図である。
FIG. 3 is an exploded perspective view showing a heater supporting portion according to an embodiment of the present invention.

【図4】本発明の他の一実施例に係る縦型炉を示す断面
図である。
FIG. 4 is a sectional view showing a vertical furnace according to another embodiment of the present invention.

【図5】従来の縦型炉を示す断面図である。FIG. 5 is a cross-sectional view showing a conventional vertical furnace.

【図6】従来の天板を示す斜視図である。FIG. 6 is a perspective view showing a conventional top plate.

【符号の説明】[Explanation of symbols]

1 ヒータ 3 反応管 5 基板 17 天板 18 下層側断熱板 19 上層側断熱板 20 通孔 21 溝 1 Heater 3 Reaction Tube 5 Substrate 17 Top Plate 18 Lower Layer Thermal Insulation Plate 19 Upper Layer Thermal Insulation Plate 20 Through Hole 21 Groove

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 処理対象の基板を収容する反応管と、反
応管の周囲に隙間をもって設けられた筒状のヒータとを
有し、ヒータによって反応管に収容した基板を加熱して
処理する半導体製造装置の縦型炉において、通孔が形成
された下層側断熱板と、前記通孔に対応する位置から側
面まで連続する溝が形成された上層側断熱板とを重ねて
成る天板により前記ヒータの上端開口を塞ぎ、当該ヒー
タの上端に該通孔と該溝とから成る放熱用の通路を形成
したことを特徴とする縦型炉。
1. A semiconductor having a reaction tube for accommodating a substrate to be processed, and a cylindrical heater provided around the reaction tube with a gap, wherein the heater heats the substrate accommodated in the reaction tube for processing. In the vertical furnace of the manufacturing apparatus, the lower layer side heat insulating plate in which the through hole is formed and the upper layer side heat insulating plate in which continuous grooves are formed from the position corresponding to the through hole to the side surface are overlapped by the top plate. A vertical furnace characterized in that the upper end opening of the heater is closed, and a passage for radiating heat, which is composed of the through hole and the groove, is formed at the upper end of the heater.
JP21039494A 1994-08-10 1994-08-10 Semiconductor manufacturing equipment Expired - Lifetime JP3636378B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21039494A JP3636378B2 (en) 1994-08-10 1994-08-10 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21039494A JP3636378B2 (en) 1994-08-10 1994-08-10 Semiconductor manufacturing equipment

Publications (2)

Publication Number Publication Date
JPH0855811A true JPH0855811A (en) 1996-02-27
JP3636378B2 JP3636378B2 (en) 2005-04-06

Family

ID=16588605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21039494A Expired - Lifetime JP3636378B2 (en) 1994-08-10 1994-08-10 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JP3636378B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002093795A (en) * 2000-09-20 2002-03-29 Tokyo Electron Ltd Vertical heat treating apparatus
JP2004327528A (en) * 2003-04-22 2004-11-18 Hitachi Kokusai Electric Inc Semiconductor processing device
US8535444B2 (en) 2008-02-18 2013-09-17 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of manufacturing semiconductor device, and ceiling insulating part

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002093795A (en) * 2000-09-20 2002-03-29 Tokyo Electron Ltd Vertical heat treating apparatus
JP4493823B2 (en) * 2000-09-20 2010-06-30 東京エレクトロン株式会社 Vertical heat treatment equipment
JP2004327528A (en) * 2003-04-22 2004-11-18 Hitachi Kokusai Electric Inc Semiconductor processing device
US8535444B2 (en) 2008-02-18 2013-09-17 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of manufacturing semiconductor device, and ceiling insulating part
TWI458033B (en) * 2008-02-18 2014-10-21 Hitachi Int Electric Inc Substrate processing device, method for manufacturing semiconductor device and roof insulator
TWI466216B (en) * 2008-02-18 2014-12-21 Hitachi Int Electric Inc Substrate processing device, method for manufacturing semiconductor device and roof insulator

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