JPH0846504A - Relay - Google Patents
RelayInfo
- Publication number
- JPH0846504A JPH0846504A JP17883494A JP17883494A JPH0846504A JP H0846504 A JPH0846504 A JP H0846504A JP 17883494 A JP17883494 A JP 17883494A JP 17883494 A JP17883494 A JP 17883494A JP H0846504 A JPH0846504 A JP H0846504A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- switching circuit
- output side
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Led Device Packages (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Electronic Switches (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、警報装置等の自己保持
回路に使用されるリレーに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a relay used in a self-holding circuit such as an alarm device.
【０００２】[0002]
【従来の技術】従来、この種の自己保持回路、つまり、
例えばセンサーが警報パルス信号を出力すると復帰スイ
ッチを作動させるまで警報ブザーを鳴らし続けるといっ
た回路に、電磁リレーを使用した図６に示す構成のもの
が存在する。2. Description of the Related Art Conventionally, this type of self-holding circuit, that is,
For example, in a circuit in which an alarm buzzer continues to sound until a reset switch is operated when a sensor outputs an alarm pulse signal, there is a circuit using an electromagnetic relay as shown in FIG.
【０００３】この電磁リレーは、２個の常開型接点R1,R
2 を有し、電源E の両端間において、そのコイルRyがセ
ンサーの警報パルス信号により閉成する常開型スイッチ
S1及び手動復帰用の常閉型スイッチS2を直列接続され、
一方の常開型接点R1が常開型スイッチS1に並列接続さ
れ、他方の常開型接点R2が警報ブザーBzに接続されてい
る。This electromagnetic relay has two normally open contacts R 1 and R.
A normally open switch that has 2 and its coil Ry is closed by the alarm pulse signal of the sensor between both ends of the power supply E.
S 1 and a normally closed switch S 2 for manual reset are connected in series,
One normally open contact R 1 is connected in parallel to the normally open switch S 1 , and the other normally open contact R 2 is connected to the alarm buzzer Bz.
【０００４】その動作は、センサーの警報パルス信号に
より常開型スイッチS1が閉成すると、コイルRyが励磁さ
れることによって、他方の常開型接点R2が閉成して警報
ブザーBzが鳴り始めると同時に、一方の常開型接点R1も
閉成することによってコイルRyはその常開型接点R1を介
して励磁状態を自己保持され、常閉型スイッチS2を手動
復帰して開成させるまで、警報ブザーBzは鳴り続ける。When the normally open switch S 1 is closed by the alarm pulse signal of the sensor, the coil Ry is excited to close the other normally open contact R 2 and the alarm buzzer Bz is activated. Simultaneously with the start of ringing, one normally open contact R 1 is also closed to keep the coil Ry self-excited through the normally open contact R 1 and manually return the normally closed switch S 2. The alarm buzzer Bz continues to ring until it is opened.
【０００５】[0005]
【発明が解決しようとする課題】上記した従来の警報装
置等の自己保持回路に使用されるリレーは電磁リレーで
あって、一般にはそのコイルRyを励磁するのに必要な消
費電力が比較的大きいために、センサーによる警報パル
ス信号出力も大きくする必要があり、また、機構部材で
構成されているために、全体サイズが大きく、しかも振
動等により誤動作する可能性もある。The relay used in the self-holding circuit of the above-mentioned conventional alarm device is an electromagnetic relay, and generally the power consumption required to excite the coil Ry is relatively large. Therefore, it is necessary to increase the output of the alarm pulse signal by the sensor, and since it is composed of a mechanical member, the overall size is large, and there is a possibility of malfunction due to vibration or the like.
【０００６】本発明は、上記事由に鑑みてなしたもの
で、その目的とするところは、自己保持回路に好適なリ
レーを提供することにある。The present invention has been made in view of the above circumstances, and an object thereof is to provide a relay suitable for a self-holding circuit.
【０００７】[0007]
【課題を解決するための手段】上記した課題を解決する
ために、請求項１記載のものは、入力側の信号に応答し
て発光する入力側発光ダイオードと、入力側発光ダイオ
ードからの光を受けてオン状態になる出力側のスイッチ
ング回路と、オン状態になったスイッチング回路の電流
により発光しその光を受けたスイッチング回路が自己の
オン状態を保持するようスイッチング回路に接続された
出力側発光ダイオードと、を有した構成にしてある。In order to solve the above-mentioned problems, according to a first aspect of the present invention, an input side light emitting diode which emits light in response to a signal on the input side and a light from the input side light emitting diode are provided. Output side light emission connected to the switching circuit so that the switching circuit on the output side that receives the light and the switching circuit that turned on emits light and the switching circuit that receives the light maintains its own on state And a diode.
【０００８】また、請求項２記載のものは、請求項１記
載のものにおいて、前記スイッチング回路は、入力側発
光ダイオードからの光を受けて光起電力を発生する光電
素子と、その光起電力をゲート・ソース間に印加されて
ドレイン・ソース間をオン状態にするＭＯＳＦＥＴと、
からなる構成にしてある。According to a second aspect of the present invention, in the first aspect, the switching circuit includes a photoelectric element which receives light from an input side light emitting diode and generates a photoelectromotive force, and the photovoltaic element. , Which is applied between the gate and the source to turn on the drain and the source,
It consists of.
【０００９】また、請求項３記載のものは、請求項１記
載のものにおいて、バイパス回路を前記出力側発光ダイ
オードに並列接続した構成にしてある。According to a third aspect of the present invention, in the first aspect, a bypass circuit is connected in parallel to the output side light emitting diode.
【００１０】また、請求項４記載のものは、請求項１記
載のものにおいて、前記スイッチング回路及び前記出力
側発光ダイオードからなる出力側回路の一対を互いに対
称的に直列接続するとともに、その各前記出力側発光ダ
イオードにダイオードを逆極性でそれぞれ並列接続した
構成にしてある。According to a fourth aspect of the present invention, according to the first aspect, a pair of the output side circuit including the switching circuit and the output side light emitting diode are symmetrically connected in series with each other, and the respective ones are connected in series. The output side light emitting diode and the diode are connected in parallel with opposite polarities.
【００１１】[0011]
【作用】請求項１記載のものによれば、自己保持回路を
構成する各構成部材は、機構部材からなる従来例と違っ
て、半導体で構成できるから、全体サイズも小さく、し
かも振動等による誤動作もなくなるとともに、入力側の
信号は消費電力の比較的小さい入力側発光ダイオードを
発光させるだけでよい。According to the first aspect of the present invention, each of the constituent members of the self-holding circuit can be made of a semiconductor, unlike the conventional example of a mechanical member, so that the overall size is small and malfunction due to vibration or the like. In addition, the signal on the input side only needs to cause the light emitting diode on the input side, which consumes relatively little power, to emit light.
【００１２】また、請求項２記載のものによれば、スイ
ッチング回路は、入力側発光ダイオードからの光を受け
て発生する光電素子の光起電力をゲート・ソース間に印
加されてドレイン・ソース間をオン状態にするＭＯＳＦ
ＥＴを使用しており、このＭＯＳＦＥＴは、フォトカプ
ラ等の半導体と違って、オン時のオフセット電圧が極め
て低いため、微小電圧の信号やアナログ信号でも歪みな
く開閉制御する。According to another aspect of the present invention, in the switching circuit, the photoelectromotive force of the photoelectric element generated by receiving the light from the light emitting diode on the input side is applied between the gate and the source so as to apply between the drain and the source. Turning on the MOSF
ET is used, and unlike a semiconductor such as a photocoupler, since the offset voltage at the time of turning on is extremely low, opening / closing control is performed without distortion even for a minute voltage signal or an analog signal.
【００１３】また、請求項３記載のものによれば、スイ
ッチング回路がオン状態になったとき、負荷電流の大部
分はバイパス回路を介して流れる。According to the third aspect of the present invention, when the switching circuit is turned on, most of the load current flows through the bypass circuit.
【００１４】また、請求項４記載のものによれば、負荷
電流が交流であっても、互いに対称的に直列接続した一
方のスイッチング回路及び出力側発光ダイオードを流れ
た電流は、他方の出力側発光ダイオードに逆極性で並列
接続したダイオードを介して流れる。According to another aspect of the present invention, even if the load current is an alternating current, the current flowing through the one switching circuit and the output side light emitting diode symmetrically connected in series with each other is the current flowing through the other output side. It flows through a diode connected in parallel to the light emitting diode in reverse polarity.
【００１５】[0015]
【実施例】本発明の第１実施例を図１乃至図３に基づい
て以下に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIGS.
【００１６】1 は入力側発光ダイオードで、入力端子
P1,P2 間に接続され、入力側の信号、例えば警報装置に
おけるセンサーからの警報パルス信号に応答して発光す
るようになっている。Reference numeral 1 denotes an input side light emitting diode, which is an input terminal
It is connected between P 1 and P 2 and emits light in response to a signal on the input side, for example, an alarm pulse signal from a sensor in an alarm device.
【００１７】2 はスイッチング回路で、光電素子21及び
ＭＯＳＦＥＴ22からなり、光電素子21は、入力側発光ダ
イオード1 からの光を受けて光起電力を発生し、その光
起電力の正極及び負極がＭＯＳＦＥＴ22のゲート22g 及
びソース22s にそれぞれ接続されており、入力側発光ダ
イオード1 と出力側のスイッチング回路2 詳しくは光電
素子21とは、光学的に結合されるものであって、電気的
には絶縁されていることになる。A switching circuit 2 is composed of a photoelectric element 21 and a MOSFET 22. The photoelectric element 21 receives light from the input side light emitting diode 1 to generate photoelectromotive force, and the positive and negative electrodes of the photoelectromotive force are MOSFET 22. Of the input side light emitting diode 1 and the output side switching circuit 2 in more detail, the photoelectric element 21 is optically coupled and electrically insulated from each other. Will be.
【００１８】3 は出力側発光ダイオードで、一方の出力
端子P3とＭＯＳＦＥＴ22のドレイン22d との間に接続さ
れるとともに、他方の出力端子P4にはＭＯＳＦＥＴ22の
ソース22s が接続される。An output side light emitting diode 3 is connected between one output terminal P 3 and the drain 22d of the MOSFET 22, and the other output terminal P 4 is connected to the source 22s of the MOSFET 22.
【００１９】そして、上記の各部材は、図２に示すよう
に、導電板により形成されたフレームF1乃至F5に実装さ
れている。詳しくは、入力側発光ダイオード1 は、カソ
ード電極となる裏面が入力端子P2を一端部に有するＬ字
状のフレームF2の他端部に接合され、アノード電極が入
力端子P1を一端部に有する矩形状のフレームF1の他端部
にワイヤボンディングされている。光電素子21は、出力
端子P4を一端部に有するＬ字状のフレームF4の他端部に
実装され、その負側電極がフレームF4に、正側電極がＭ
ＯＳＦＥＴ22のゲート電極にそれぞれワイヤボンディン
グされている。ＭＯＳＦＥＴ22は、ドレイン電極となる
裏面が略Ｓ字状のフレームF5の中央部に接合され、ゲー
ト電極が上記したように光電素子21の正側電極に、ソー
ス電極がフレームF4にそれぞれワイヤボンディングされ
ている。出力側発光ダイオード3は、カソード電極とな
る裏面がフレームF5の他端部に接合され、アノード電極
が入力端子P3を一端部に有するＬ字状のフレームF3の他
端部にワイヤボンディングされている。As shown in FIG. 2, the above-mentioned members are mounted on frames F 1 to F 5 formed of conductive plates. More specifically, in the input side light emitting diode 1, the back surface serving as the cathode electrode is joined to the other end of the L-shaped frame F 2 having the input terminal P 2 at one end, and the anode electrode has the input terminal P 1 at one end. Is wire-bonded to the other end of the rectangular frame F 1 included in. The photoelectric element 21 is mounted on the other end of an L-shaped frame F 4 having an output terminal P 4 at one end, and the negative side electrode is on the frame F 4 and the positive side electrode is M.
Each of the gate electrodes of the OSFET 22 is wire-bonded. The MOSFET 22 has a back surface serving as a drain electrode bonded to the central portion of a substantially F-shaped frame F 5 , the gate electrode is wire-bonded to the positive electrode of the photoelectric element 21 and the source electrode is wire-bonded to the frame F 4 as described above. Has been done. The output side light emitting diode 3 has a back surface serving as a cathode electrode joined to the other end of the frame F 5 and an anode electrode wire-bonded to the other end of the L-shaped frame F 3 having the input terminal P 3 at one end. Has been done.
【００２０】ここで、フレームF1乃至F5は、同一平面上
に配設して全体外形が矩形状に形成されるとともに、そ
の一方側から入力端子P1,P2 及び出力端子P3,P4 が同方
向へ延出され、他方側に各フレームの他端部を寄せて配
置して近接する入力側発光ダイオード1 と光電素子21と
出力側発光ダイオード3 とが透明な光カップリング樹脂
4 を充填して光結合され、さらに図示していないが、矩
形状部分が遮光されるよう不透明な樹脂等により端子
P1,P2,P3,P4 だけを導出して充填される。Here, the frames F 1 to F 5 are arranged on the same plane so that the entire outer shape is formed in a rectangular shape, and the input terminals P 1 , P 2 and the output terminals P 3 , P 4 extends in the same direction, and the other end of each frame is arranged close to the other side, and the input side light emitting diode 1, the photoelectric element 21, and the output side light emitting diode 3 are transparent optical coupling resin.
Although not shown, the terminals are made of opaque resin, etc.
Only P 1 , P 2 , P 3 and P 4 are derived and filled.
【００２１】そして、このリレーは、図３に示すよう
に、電源E の両端間において、出力端子P3,P4 に負荷装
置例えば警報ブザーBz及び手動復帰用の常閉型スイッチ
S を直列接続して使用される。As shown in FIG. 3, this relay has a load device such as an alarm buzzer Bz and a normally-closed switch for manual return between output terminals P 3 and P 4 between both ends of a power source E.
Used by connecting S in series.
【００２２】その動作は、センサーの警報パルス信号が
入力端子P1,P2 に入力されると、入力側発光ダイオード
1 が発光し、その光を受けて光起電力21が光起電力を発
生し、その光起電力をゲート22g 及びソース22s の間に
印加されたＭＯＳＦＥＴ22がオン状態になってドレイン
22d 及びソース22s の間が導通する。そうすると、電源
E から負荷電流が流れて警報ブザーBzが鳴り始めると同
時に、その負荷電流は出力側発光ダイオード3 にも流れ
て発光し、その光を受けた光起電力21は光起電力を引き
続き発生して、ＭＯＳＦＥＴ22はオン状態のまま自己保
持されることになり、警報ブザーBzは鳴り続ける。The operation is such that when the alarm pulse signal of the sensor is input to the input terminals P 1 and P 2 , the input side light emitting diode
1 emits light, and the photoelectromotive force 21 generates the photoelectromotive force in response to the light, and the photoelectromotive force is applied between the gate 22g and the source 22s to turn on the MOSFET 22 and the drain.
Conduction is established between 22d and the source 22s. Then power
At the same time that the load current flows from E and the alarm buzzer Bz starts to sound, the load current also flows to the output side light emitting diode 3 and emits light, and the photovoltaic power 21 receiving the light continues to generate the photovoltaic power. , MOSFET22 will be self-maintained in the ON state, and the alarm buzzer Bz will continue to ring.
【００２３】また、常閉型スイッチS を手動復帰して開
成させると、負荷電流が流れなくなって出力側発光ダイ
オード3 が発光せず、光起電力21の光起電力がなくな
り、ＭＯＳＦＥＴ22がオフ状態になって、自己保持が解
除して警報ブザーBzは鳴るのを停止する。When the normally closed switch S is manually restored and opened, the load current stops flowing, the output side light emitting diode 3 does not emit light, the photovoltaic power of the photovoltaic power 21 disappears, and the MOSFET 22 is turned off. Then, the self-holding is released and the alarm buzzer Bz stops ringing.
【００２４】かかるリレーにあっては、自己保持回路を
構成する各構成部材、つまり入力側発光ダイオード1 、
光電素子21、ＭＯＳＦＥＴ22、出力側発光ダイオード3
は、機構部材からなる従来例と違って、半導体で構成さ
れるから、全体サイズも小さく、しかも振動等による誤
動作もなくなるとともに、入力側の信号は消費電力の比
較的小さい入力側発光ダイオード1 を発光させるだけで
よいために、センサーによる警報パルス信号出力も大き
くする必要がない。In such a relay, each component forming the self-holding circuit, that is, the input side light emitting diode 1,
Photoelectric element 21, MOSFET 22, output side light emitting diode 3
Unlike the conventional example that consists of mechanical members, is composed of semiconductors, so the overall size is small, and malfunctions due to vibration etc. are eliminated, and the input side light emitting diode 1 with relatively low power consumption is used. Since only the light emission is required, it is not necessary to increase the warning pulse signal output by the sensor.
【００２５】また、スイッチング回路2 に使用している
ＭＯＳＦＥＴ22は、フォトカプラ等の半導体と違って、
オン時のオフセット電圧、つまりオン状態を維持できる
最小電圧が極めて低いため、微小電圧の信号やアナログ
信号でも歪みなく開閉制御することができる。Further, unlike the semiconductor such as the photo coupler, the MOSFET 22 used in the switching circuit 2 is
Since the offset voltage at the time of ON, that is, the minimum voltage that can maintain the ON state is extremely low, opening / closing control can be performed without distortion even for a signal of a minute voltage or an analog signal.
【００２６】なお、本実施例では、スイッチング回路2
は、光電素子21及びＭＯＳＦＥＴ22からなっているが、
開閉制御される信号が比較的大きくて多少の歪みを許容
できる場合には、入力側発光ダイオード1 及び出力側発
光ダイオード3 の光を直接受けて自身が光点弧すること
によってオン状態になるフォトカプラ等の半導体を使用
してもよい。In this embodiment, the switching circuit 2
Consists of photoelectric element 21 and MOSFET 22,
If the signal to be controlled to open and close is relatively large and some distortion can be tolerated, the photo diode that receives the light from the light emitting diode 1 on the input side and the light emitting diode on the output side 3 directly and ignites itself is turned on. A semiconductor such as a coupler may be used.
【００２７】また、本実施例では、各部材を実装するフ
レームF1乃至F5は、同一平面上に配設して全体外形が矩
形状に形成されて薄型になっているが、各フレームを立
体的に配設することによって、全体外形が直方体状に形
成されて小型になるようにしてもよく、さらには、入力
側発光ダイオード1 及び出力側発光ダイオード3 を除く
部材の一部又は全部を１チップ化すれば、より小型にな
る。Further, in this embodiment, the frames F 1 to F 5 on which the respective members are mounted are arranged on the same plane and the overall outer shape is formed in a rectangular shape to be thin. By arranging three-dimensionally, the whole outer shape may be formed in a rectangular parallelepiped shape to be small in size, and further, a part or all of members except the input side light emitting diode 1 and the output side light emitting diode 3 may be formed. If it is made into one chip, it becomes smaller.
【００２８】次に、本発明の第２実施例を図４に基づい
て以下に説明する。なお、第１実施例と実質的に同じ機
能を有する部材には同じ符号を付して、その相違すると
ころのみを説明する。Next, a second embodiment of the present invention will be described below with reference to FIG. The members having substantially the same functions as those in the first embodiment are designated by the same reference numerals, and only different points will be described.
【００２９】すなわち、第１実施例では、出力側発光ダ
イオード3 は、一方の出力端子P3とＭＯＳＦＥＴ22のド
レイン22d との間に接続されているが、本実施例では、
ＭＯＳＦＥＴ22のドレイン22d と抵抗3aを介して接続さ
れるとともに、その出力側発光ダイオード3 及び抵抗3a
にダイオード5a,5b からなるバイパス回路5 が並列接続
されている。That is, in the first embodiment, the output side light emitting diode 3 is connected between the one output terminal P 3 and the drain 22d of the MOSFET 22, but in the present embodiment,
It is connected to the drain 22d of the MOSFET 22 through the resistor 3a, and the output side light emitting diode 3 and resistor 3a
A bypass circuit 5 consisting of diodes 5a and 5b is connected in parallel.
【００３０】かかるリレーにあっては、第１実施例の効
果に加えて、スイッチング回路2 がオン状態になったと
き、負荷電流の大部分はバイパス回路5 を介して流れ、
出力側発光ダイオード3 には、ダイオード5a,5b の電圧
降下と抵抗3aとで決まる電流が流れるだけであるので、
十分に大きな負荷電流を流すことができる。In such a relay, in addition to the effect of the first embodiment, most of the load current flows through the bypass circuit 5 when the switching circuit 2 is turned on.
In the light emitting diode 3 on the output side, only the current determined by the voltage drop of the diodes 5a and 5b and the resistor 3a flows,
A sufficiently large load current can be passed.
【００３１】次に、本発明の第３実施例を図５に基づい
て以下に説明する。なお、第１実施例と実質的に同じ機
能を有する部材には同じ符号を付してある。Next, a third embodiment of the present invention will be described below with reference to FIG. The members having substantially the same functions as those in the first embodiment are designated by the same reference numerals.
【００３２】このものは、スイッチング回路2 及び出力
側発光ダイオード3 からなる出力側回路の一対を互いに
対称的に直列接続するとともに、その各出力側発光ダイ
オード3 にダイオード6 を逆極性でそれぞれ並列接続し
てある。In this device, a pair of output side circuits consisting of a switching circuit 2 and an output side light emitting diode 3 are connected in series symmetrically to each other, and a diode 6 is connected in parallel to each output side light emitting diode 3 in reverse polarity. I am doing it.
【００３３】詳しくは、一対のＭＯＳＦＥＴ22,22 が一
方のソース及び他方のドレインを接続され、その接続点
に光電素子21の負極が接続されるとともに、両ゲートに
光電素子21の正極がそれぞれ接続され、一対の出力側発
光ダイオード3,3 のカソードが一方のドレイン及び他方
のソースにそれぞれ接続され、その両出力側発光ダイオ
ード3,3 にダイオード6,6 が逆極性でそれぞれ並列接続
されている。More specifically, a pair of MOSFETs 22 and 22 are connected to one source and the other drain, the connection point is connected to the negative electrode of the photoelectric element 21, and both gates are connected to the positive electrode of the photoelectric element 21, respectively. The cathodes of the pair of output side light emitting diodes 3, 3 are connected to one drain and the other source, respectively, and the diodes 6, 6 are connected in parallel to the output side light emitting diodes 3, 3 with opposite polarities.
【００３４】そして、出力端子P3,P4 には、第１実施例
の図３において、直流電源E に代えて交流電源が接続し
て使用され、一方のＭＯＳＦＥＴ22及び出力側発光ダイ
オード3 を流れた電流は、他方のダイオード6 を介して
流れる。An AC power source is connected to the output terminals P 3 and P 4 in place of the DC power source E in FIG. 3 of the first embodiment, and the one of the MOSFET 22 and the output side light emitting diode 3 flows. Current flows through the other diode 6.
【００３５】かかるリレーにあっては、上記したよう
に、交流電源においても自己保持動作を行うことによっ
て、第１実施例と同様の効果を奏することができる。In such a relay, as described above, the same effect as that of the first embodiment can be obtained by performing the self-holding operation even in the AC power supply.
【００３６】[0036]
【発明の効果】請求項１記載のものは、自己保持回路を
構成する各構成部材は、機構部材からなる従来例と違っ
て、半導体で構成できるから、全体サイズも小さく、し
かも振動等による誤動作もなくなるとともに、入力側の
信号は消費電力の比較的小さい入力側発光ダイオードを
発光させるだけでよいために、センサーによる警報パル
ス信号出力も大きくする必要がない。According to the first aspect of the present invention, each of the constituent members of the self-holding circuit can be made of a semiconductor, unlike the conventional example of a mechanical member. Therefore, the overall size is small, and malfunctions due to vibration or the like occur. In addition, since the signal on the input side need only emit light from the light emitting diode on the input side, which consumes relatively little power, it is not necessary to increase the warning pulse signal output by the sensor.
【００３７】また、請求項２記載のものは、請求項１記
載のものの効果に加えて、スイッチング回路は、入力側
発光ダイオードからの光を受けて発生する光電素子の光
起電力をゲート・ソース間に印加されてドレイン・ソー
ス間をオン状態にするＭＯＳＦＥＴを使用しており、こ
のＭＯＳＦＥＴは、フォトカプラ等の半導体と違って、
オン時のオフセット電圧が極めて低いため、微小電圧の
信号やアナログ信号でも歪みなく開閉制御できる。According to a second aspect of the present invention, in addition to the effects of the first aspect, the switching circuit uses the photovoltaic power of the photoelectric element generated by receiving light from the light emitting diode on the input side as a gate source. A MOSFET that is applied between them to turn on the drain and source is used. This MOSFET is different from semiconductors such as photocouplers.
Since the offset voltage at the time of turning on is extremely low, opening / closing control can be performed without distortion even for a signal of a minute voltage or an analog signal.
【００３８】また、請求項３記載のものは、請求項１記
載のものの効果に加えて、スイッチング回路がオン状態
になったとき、負荷電流の大部分はバイパス回路を介し
て流れるので、十分に大きな負荷電流を流すことができ
る。Further, in addition to the effects of the first aspect, the third aspect of the present invention is sufficient in that most of the load current flows through the bypass circuit when the switching circuit is turned on. A large load current can be passed.
【００３９】また、請求項４記載のものは、負荷電流が
交流であっても、互いに対称的に直列接続した一方のス
イッチング回路及び出力側発光ダイオードを流れた電流
は、他方の出力側発光ダイオードに逆極性で並列接続し
たダイオードを介して流れることによって、請求項１記
載のものと同様の効果を奏することができる。According to a fourth aspect of the present invention, even if the load current is an alternating current, the current flowing through the one switching circuit and the output side light emitting diode symmetrically connected in series with each other is the current flowing through the other output side light emitting diode. The same effect as that of the first aspect can be obtained by flowing through the diode connected in parallel with the opposite polarity.
【図１】本発明の第１実施例を示す回路図である。FIG. 1 is a circuit diagram showing a first embodiment of the present invention.
【図２】同上の実装状態を示す平面図である。FIG. 2 is a plan view showing a mounted state of the same.
【図３】同上のものに負荷を接続して使用する状態を示
す回路図である。FIG. 3 is a circuit diagram showing a state in which a load is connected to the above-mentioned one for use.
【図４】本発明の第２実施例を示す回路図である。FIG. 4 is a circuit diagram showing a second embodiment of the present invention.
【図５】本発明の第３実施例を示す回路図である。FIG. 5 is a circuit diagram showing a third embodiment of the present invention.
【図６】従来例のものに負荷を接続して使用する状態を
示す回路図である。FIG. 6 is a circuit diagram showing a state in which a load is connected to a conventional example and used.
1 入力側発光ダイオード 2 スイッチング回路 21 光電素子 22 ＭＯＳＦＥＴ 22g ゲート 22s ソース 22d ドレイン 3 出力側発光ダイオード 5 バイパス回路 6 ダイオード 1 Input side light emitting diode 2 Switching circuit 21 Photoelectric element 22 MOSFET 22g Gate 22s Source 22d Drain 3 Output side light emitting diode 5 Bypass circuit 6 Diode
Claims (4)
発光ダイオードと、入力側発光ダイオードからの光を受
けてオン状態になる出力側のスイッチング回路と、オン
状態になったスイッチング回路の電流により発光しその
光を受けたスイッチング回路が自己のオン状態を保持す
るようスイッチング回路に接続された出力側発光ダイオ
ードと、を有してなることを特徴とするリレー。1. An input side light emitting diode which emits light in response to a signal on the input side, an output side switching circuit which is turned on by receiving light from the input side light emitting diode, and a switching circuit which is turned on state. A relay, comprising: an output side light emitting diode connected to the switching circuit so that the switching circuit emits light by an electric current and receives the light so as to maintain its ON state.
イオードからの光を受けて光起電力を発生する光電素子
と、その光起電力をゲート・ソース間に印加されてドレ
イン・ソース間をオン状態にするＭＯＳＦＥＴと、から
なることを特徴とする請求項１記載のリレー。2. The photoelectric conversion device, wherein the switching circuit receives a light from an input side light emitting diode to generate a photoelectromotive force, and the photoelectromotive force is applied between a gate and a source to turn on a drain and a source. 2. The relay according to claim 1, further comprising:
ドに並列接続してなることを特徴とする請求項１記載の
リレー。3. A relay according to claim 1, wherein a bypass circuit is connected in parallel with the output side light emitting diode.
光ダイオードからなる出力側回路の一対を互いに対称的
に直列接続するとともに、その各前記出力側発光ダイオ
ードにダイオードを逆極性でそれぞれ並列接続してなる
ことを特徴とする請求項１記載のリレー。4. A pair of output side circuits comprising the switching circuit and the output side light emitting diodes are symmetrically connected in series with each other, and diodes are connected in parallel to the respective output side light emitting diodes with opposite polarities. The relay according to claim 1, wherein:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17883494A JPH0846504A (en) | 1994-07-29 | 1994-07-29 | Relay |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17883494A JPH0846504A (en) | 1994-07-29 | 1994-07-29 | Relay |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0846504A true JPH0846504A (en) | 1996-02-16 |
Family
ID=16055485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17883494A Withdrawn JPH0846504A (en) | 1994-07-29 | 1994-07-29 | Relay |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0846504A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101271556B1 (en) * | 2010-12-30 | 2013-06-11 | 한국과학기술원 | Method and apparatus for controlling power switch in power automation system |
| JP2015012466A (en) * | 2013-06-28 | 2015-01-19 | ブラザー工業株式会社 | Communication device |
| CN111507445A (en) * | 2020-06-01 | 2020-08-07 | 湖南炬神电子有限公司 | Automatic bar code scanning alarm system |
-
1994
- 1994-07-29 JP JP17883494A patent/JPH0846504A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101271556B1 (en) * | 2010-12-30 | 2013-06-11 | 한국과학기술원 | Method and apparatus for controlling power switch in power automation system |
| JP2015012466A (en) * | 2013-06-28 | 2015-01-19 | ブラザー工業株式会社 | Communication device |
| CN111507445A (en) * | 2020-06-01 | 2020-08-07 | 湖南炬神电子有限公司 | Automatic bar code scanning alarm system |
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