JPH0832517A - Optical transmission and reception circuit - Google Patents

Optical transmission and reception circuit

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Publication number
JPH0832517A
JPH0832517A JP6165413A JP16541394A JPH0832517A JP H0832517 A JPH0832517 A JP H0832517A JP 6165413 A JP6165413 A JP 6165413A JP 16541394 A JP16541394 A JP 16541394A JP H0832517 A JPH0832517 A JP H0832517A
Authority
JP
Japan
Prior art keywords
circuit
switch
transmission
signal
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6165413A
Other languages
Japanese (ja)
Inventor
Hideaki Kimura
秀明 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6165413A priority Critical patent/JPH0832517A/en
Publication of JPH0832517A publication Critical patent/JPH0832517A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To improve the transmission efficiency by separating a semiconductor laser and an amplifier circuit at transmission so as to eliminate the need for a switch connected at reception thereby eliminating deterioration in a minimum light reception level caused by switch noise and parasitic capacitance. CONSTITUTION:A switch 11 is closed and a switch 26 is open when a transmission signal is at a high level in the case of transmission. In this case, a semiconductor laser 12 is driven by a drive circuit 13 and stimulated to charge a parasitic capacitance C1 being a low frequency term. When the level of the transmission signal is low, the switch 11 is open and the switch 26 is closed, In this case, the semiconductor laser 12 is reversely biased by a reference voltage Vref applied via the switch 26 and the charge stored in a parasitic capacitance C1 is discharged. The resistance of a feedback resistor of a preamplifier 22 is several tens of kohms and the parasitic resistance of the semiconductor laser 12 is several Mohms, then the feedback resistor of the preamplifier 22 does not give effect on a time constant. Thus, the deterioration in the minimum light receiving level is eliminated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、光通信システムの端末
において、光信号の送信および受信を行う光送受信回路
に関する。特に、半導体レーザを発光素子および受光素
子として利用し、1素子で光信号の送受信を行う光送受
信回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical transceiver circuit for transmitting and receiving an optical signal in a terminal of an optical communication system. In particular, the present invention relates to an optical transmitter / receiver circuit that uses a semiconductor laser as a light emitting element and a light receiving element to transmit and receive an optical signal with one element.

【0002】[0002]

【従来の技術】従来は光送信回路と光受信回路を別々に
構成していたが、コスト低減のために1素子を送信と受
信で切り替えて使用する光送受信回路が提案されてい
る。このような光送受信回路は、発光素子および受光素
子として機能する半導体レーザを用いることにより容易
に構成できる。
2. Description of the Related Art Conventionally, an optical transmission circuit and an optical reception circuit were separately configured, but an optical transmission / reception circuit in which one element is switched between transmission and reception for cost reduction has been proposed. Such an optical transmission / reception circuit can be easily configured by using a semiconductor laser that functions as a light emitting element and a light receiving element.

【0003】図5は、半導体レーザを用いた従来の光送
受信回路の構成を示す。図において、電源(VDD)端子
10に、スイッチ11,半導体レーザ12,駆動回路1
3を直列に接続して光送信回路部が構成される。また、
半導体レーザ12のアノードに、スイッチ21,プリア
ンプ22,ゲインコントロールアンプ(GCA)23,
比較回路24,レベル変換回路25を接続し、半導体レ
ーザ12のカソードに、スイッチ26を介して基準電圧
(Vref )端子27を接続して光受信回路部が構成され
る。切替制御回路31aは、送信時(S)にハイレベル
となり、受信時(R)にローレベルとなる送受信切替信
号(以下「S/R信号」という)をスイッチ11へ出力
し、反転回路32を介して生成される反転S/R信号を
スイッチ21,26へ出力する。
FIG. 5 shows the configuration of a conventional optical transmitter / receiver circuit using a semiconductor laser. In the figure, a power source (V DD ) terminal 10 is connected to a switch 11, a semiconductor laser 12, and a drive circuit 1.
An optical transmission circuit unit is configured by connecting 3 in series. Also,
A switch 21, a preamplifier 22, a gain control amplifier (GCA) 23, an anode of the semiconductor laser 12,
The comparison circuit 24 and the level conversion circuit 25 are connected to each other, and the cathode of the semiconductor laser 12 is connected to the reference voltage (Vref) terminal 27 via the switch 26 to form a light receiving circuit section. The switching control circuit 31a outputs to the switch 11 a transmission / reception switching signal (hereinafter referred to as “S / R signal”) which becomes high level at the time of transmission (S) and becomes low level at the time of reception (R), and causes the inverting circuit 32 to operate. The inverted S / R signal generated via the output is output to the switches 21 and 26.

【0004】送信時(S)には、スイッチ11がオンと
なり、スイッチ21,26がオフとなる。駆動回路13
は伝送信号に応じて半導体レーザ12を駆動し、半導体
レーザ12は伝送信号に応じた光信号を出力する。
At the time of transmission (S), the switch 11 is turned on and the switches 21 and 26 are turned off. Drive circuit 13
Drives the semiconductor laser 12 according to the transmission signal, and the semiconductor laser 12 outputs an optical signal according to the transmission signal.

【0005】受信時(R)には、スイッチ11がオフと
なり、スイッチ21,26がオンとなる。半導体レーザ
12はスイッチ26を介して基準電圧Vref が印加さ
れ、受光素子として機能する。光信号に応じた検出電流
は、スイッチ21を介してプリアンプ22で電流−電圧
線形増幅される。さらに、ゲインコントロールアンプ2
3で入力光信号レベルに依存しない一定電圧の信号とな
り、比較回路24でデューティ調整および電圧増幅を行
い、レベル変換回路25で所定のレベルに変換して出力
される。
At reception (R), the switch 11 is turned off and the switches 21 and 26 are turned on. The semiconductor laser 12 receives the reference voltage Vref via the switch 26 and functions as a light receiving element. The detection current corresponding to the optical signal is current-voltage linearly amplified by the preamplifier 22 via the switch 21. Furthermore, gain control amplifier 2
At 3, the signal becomes a signal of a constant voltage that does not depend on the input optical signal level, the comparison circuit 24 performs duty adjustment and voltage amplification, and the level conversion circuit 25 converts it to a predetermined level and outputs it.

【0006】このような構成により、S/R信号で送信
モードと受信モードを切り替え、半導体レーザ12を発
光素子または受光素子として機能させることができる。
With such a configuration, the semiconductor laser 12 can be made to function as a light emitting element or a light receiving element by switching between the transmission mode and the reception mode by the S / R signal.

【0007】[0007]

【発明が解決しようとする課題】ところで、半導体レー
ザ12の等価回路は、図6に示すように寄生抵抗R1
寄生容量C1 の直列回路からなる低周波項と、寄生抵抗
2 と寄生容量C2 の並列回路からなる高周波項を有す
る。その中でも、低周波項の寄生抵抗R1 と寄生容量C
1 による時定数が数十μ秒から数百μ秒と大きい。その
ために、送信時に寄生容量C1 が十分に充電されると、
送信モードから受信モードに切り替えたときにその不要
電荷の放電時間が長くなる。なお、この放電はプリアン
プ22の帰還抵抗Rf を介して行われる。図7は、S/
R信号に応じて送信モードから受信モードに切り替えた
ときのプリアンプ22の出力波形を示すが、時定数によ
って受信特性が安定するまでに時間がかかることがわか
る。したがって、送受信切り替え時の保護時間を長くと
らなければならなかった。
By the way, the equivalent circuit of the semiconductor laser 12 has a low frequency term consisting of a series circuit of a parasitic resistance R 1 and a parasitic capacitance C 1 as shown in FIG. 6, a parasitic resistance R 2 and a parasitic resistance R 2. It has a high frequency term consisting of a parallel circuit of a capacitance C 2 . Among them, the parasitic resistance R 1 and the parasitic capacitance C of the low frequency term
The time constant due to 1 is as large as tens of microseconds to hundreds of microseconds. Therefore, when the parasitic capacitance C 1 is sufficiently charged during transmission,
When switching from the transmission mode to the reception mode, the discharge time of the unnecessary charges becomes long. The discharge is performed via the feedback resistor Rf of the preamplifier 22. FIG. 7 shows S /
The output waveform of the preamplifier 22 when the transmission mode is switched to the reception mode according to the R signal is shown, but it can be seen that it takes time for the reception characteristics to stabilize depending on the time constant. Therefore, it is necessary to take a long protection time when switching between transmission and reception.

【0008】また、従来の光送受信回路の構成では、特
にプリアンプ22の前段に挿入されたスイッチ21の雑
音により最小受光レベルが劣化し、またスイッチ寄生容
量により特性が劣化する問題があった。
Further, the conventional optical transmission / reception circuit has a problem that the minimum light receiving level is deteriorated due to noise of the switch 21 inserted in the preceding stage of the preamplifier 22 and the characteristic is deteriorated due to switch parasitic capacitance.

【0009】本発明は、1つの半導体レーザを発光素子
および受光素子として機能させる構成において、送受信
切り替えを行うスイッチの雑音および寄生容量を原因と
する最小受光レベルの劣化を解消し、さらに送受信切り
替え時の保護時間を低減して伝送効率の向上が可能な光
送受信回路を提供することを目的とする。
According to the present invention, in a structure in which one semiconductor laser functions as a light emitting element and a light receiving element, deterioration of the minimum light receiving level caused by noise and parasitic capacitance of a switch for switching between transmission and reception is eliminated, and when switching between transmission and reception. It is an object of the present invention to provide an optical transmitter / receiver circuit capable of improving the transmission efficiency by reducing the protection time.

【0010】[0010]

【課題を解決するための手段】本発明の光送受信回路
は、半導体レーザの第1の端子と電源端子との間に接続
される第1のスイッチと、半導体レーザの第2の端子と
基準電圧端子との間に接続される第2のスイッチと、増
幅回路の出力段に接続されるゲート回路と、送信時には
ゲート回路を閉じ、伝送信号のハイレベルで第1のスイ
ッチをオンとし第2のスイッチをオフとし、伝送信号の
ローレベルで第1のスイッチをオフとし第2のスイッチ
をオンとし、受信時には第1のスイッチをオフとし、第
2のスイッチをオンとし、ゲート回路を開く切替信号を
送出する切替制御回路とを備える。
The optical transmitter / receiver circuit of the present invention comprises a first switch connected between a first terminal of a semiconductor laser and a power supply terminal, a second terminal of the semiconductor laser, and a reference voltage. A second switch connected to the terminal, a gate circuit connected to the output stage of the amplifier circuit, the gate circuit is closed at the time of transmission, and the first switch is turned on at the high level of the transmission signal to turn on the second switch. A switching signal that turns off the switch, turns off the first switch and turns on the second switch at a low level of the transmission signal, turns off the first switch when receiving, turns on the second switch, and opens the gate circuit. And a switching control circuit for sending out.

【0011】また、半導体レーザの第1の端子と第2の
端子との間にその間の電位差を零とする電圧フォロア回
路を接続する構成において、半導体レーザの第1の端子
と電源端子との間に接続される第1のスイッチと、半導
体レーザの第2の端子と基準電圧端子との間に接続され
る第2のスイッチと、電圧フォロア回路に直列に挿入さ
れる第3のスイッチと、増幅回路の出力段に接続される
ゲート回路と、送信時にはゲート回路を閉じ、第3のス
イッチをオフとし、伝送信号のハイレベルで第1のスイ
ッチをオンとし第2のスイッチをオフとし、伝送信号の
ローレベルで第1のスイッチをオフとし第2のスイッチ
をオンとし、受信時には第1のスイッチおよび第2のス
イッチをオフとし、第3のスイッチをオンとし、ゲート
回路を開く切替信号を送出する切替制御回路とを備え
る。
Further, in a structure in which a voltage follower circuit for making the potential difference therebetween is zero is connected between the first terminal and the second terminal of the semiconductor laser, the first terminal and the power supply terminal of the semiconductor laser are connected. A second switch connected between the second terminal of the semiconductor laser and the reference voltage terminal, a third switch connected in series with the voltage follower circuit, and an amplifier The gate circuit connected to the output stage of the circuit and the gate circuit are closed at the time of transmission, the third switch is turned off, the first switch is turned on and the second switch is turned off at the high level of the transmission signal, and the transmission signal is transmitted. At a low level, the first switch is turned off and the second switch is turned on. At reception, the first switch and the second switch are turned off, the third switch is turned on, and the gate circuit is opened. Delivering and a switching control circuit.

【0012】[0012]

【作用】本発明の光送受信回路は、半導体レーザと増幅
回路を直結し、その出力をゲート回路を介して取り出
す。ゲート回路は送信時に増幅回路の出力を遮断し、受
信時には増幅回路の出力を有効とする。これにより、半
導体レーザと増幅回路とを送信時に切り離し、受信時に
接続していたスイッチが不要となり、このスイッチの雑
音および寄生容量を原因とする最小受光レベルの劣化を
解消することができる。
In the optical transmitter / receiver circuit of the present invention, the semiconductor laser and the amplifier circuit are directly connected, and the output thereof is taken out through the gate circuit. The gate circuit cuts off the output of the amplifier circuit at the time of transmission, and validates the output of the amplifier circuit at the time of reception. As a result, the semiconductor laser and the amplifier circuit are separated at the time of transmission, and the switch connected at the time of reception becomes unnecessary, and the deterioration of the minimum light receiving level due to noise and parasitic capacitance of this switch can be eliminated.

【0013】また、送信時に伝送信号のハイレベルとロ
ーレベルに合わせて、半導体レーザに電源と基準電圧を
交互に印加することにより、半導体レーザの寄生容量に
充電される電荷を伝送信号1ビットごとに放電すること
ができる。したがって、送信モードから受信モードへ切
り替えたときの蓄積電荷が少なく、送受信切り替え時の
保護時間を大幅に短縮することができる。
Further, by alternately applying the power source and the reference voltage to the semiconductor laser in accordance with the high level and the low level of the transmission signal at the time of transmission, the electric charge charged in the parasitic capacitance of the semiconductor laser is transmitted for each bit of the transmission signal. Can be discharged to. Therefore, the accumulated charge when switching from the transmission mode to the reception mode is small, and the protection time when switching between transmission and reception can be greatly shortened.

【0014】また、受信時に、半導体レーザの両端子間
の電位差を零とする電圧フォロア回路を接続することに
より、半導体レーザを無バイアス状態にして暗電流の影
響を抑制することができる。
Further, at the time of reception, by connecting a voltage follower circuit that makes the potential difference between both terminals of the semiconductor laser to be zero, the semiconductor laser can be made non-biased and the influence of dark current can be suppressed.

【0015】[0015]

【実施例】図1は、本発明の第1実施例の構成を示す。
図において、電源(VDD)端子10に、スイッチ11,
半導体レーザ12,駆動回路13を直列に接続して光送
信回路部が構成される。また、半導体レーザ12のアノ
ードに、プリアンプ22,ゲインコントロールアンプ
(GCA)23,比較回路24,ゲート回路41,レベ
ル変換回路25を接続し、半導体レーザ12のカソード
にスイッチ26を介して基準電圧(Vref )端子27を
接続して光受信回路部が構成される。
FIG. 1 shows the configuration of a first embodiment of the present invention.
In the figure, a power supply (V DD ) terminal 10 is connected to a switch 11,
The semiconductor laser 12 and the drive circuit 13 are connected in series to form an optical transmission circuit section. In addition, the preamplifier 22, the gain control amplifier (GCA) 23, the comparison circuit 24, the gate circuit 41, and the level conversion circuit 25 are connected to the anode of the semiconductor laser 12, and the reference voltage ( Vref) terminal 27 is connected to form a light receiving circuit section.

【0016】切替制御回路31bは、S/R信号を反転
してゲート回路41に与える反転回路32と、S/R信
号と伝送信号とを入力するアンド回路33と、S/R信
号と伝送信号とを入力するナンド回路34と、アンド回
路33およびナンド回路34の出力に所定の遅延τを与
える遅延回路35a,35bとにより構成される。遅延
回路35aの出力はスイッチ11に与えられ、遅延回路
35bの出力はスイッチ26に与えられる。なお、遅延
回路35a,35bは、駆動回路13内の伝搬遅延によ
る半導体レーザ12の駆動タイミングと、スイッチ1
1,26の切り替えタイミングとを調整するために設け
られる。
The switching control circuit 31b includes an inverting circuit 32 which inverts the S / R signal and gives it to the gate circuit 41, an AND circuit 33 which inputs the S / R signal and the transmission signal, and an S / R signal and the transmission signal. And a delay circuit 35a, 35b for applying a predetermined delay τ to the outputs of the AND circuit 33 and the NAND circuit 34. The output of the delay circuit 35a is given to the switch 11, and the output of the delay circuit 35b is given to the switch 26. The delay circuits 35 a and 35 b are provided with the drive timing of the semiconductor laser 12 due to the propagation delay in the drive circuit 13 and the switch 1.
It is provided to adjust the switching timing of 1 and 26.

【0017】本実施例の第1の特徴は、半導体レーザ1
2のアノードにプリアンプ22を直結し、比較回路24
とレベル変換回路25との間に反転S/R信号に応じて
ゲート動作するゲート回路41を備えたところにある。
このゲート回路41は送信時には比較回路24の出力を
遮断し、受信時には比較回路24の出力をレベル変換回
路25に伝達する。
The first feature of this embodiment is that the semiconductor laser 1
The preamplifier 22 is directly connected to the anode of 2 and the comparison circuit 24
Between the level conversion circuit 25 and the level conversion circuit 25 is provided with a gate circuit 41 that performs a gate operation according to the inverted S / R signal.
The gate circuit 41 cuts off the output of the comparison circuit 24 at the time of transmission, and transfers the output of the comparison circuit 24 to the level conversion circuit 25 at the time of reception.

【0018】本実施例の第2の特徴は、アンド回路33
とナンド回路34を用いてS/R信号と伝送信号の論理
積をとり、送信時(S/R信号がハイレベル)に、伝送
信号に応じてスイッチ11をオンオフさせ、反転させた
伝送信号に応じてスイッチ26をオンオフさせる構成に
ある。
The second characteristic of this embodiment is that the AND circuit 33 is provided.
AND the NAND circuit 34 is used to obtain the logical product of the S / R signal and the transmission signal, and at the time of transmission (S / R signal is at a high level), the switch 11 is turned on / off according to the transmission signal, and the inverted transmission signal is obtained. Accordingly, the switch 26 is turned on / off.

【0019】以下、図2に示すタイミングチャートを参
照して送受信動作について説明する。送信時には、伝送
信号がハイレベルのときにスイッチ11がオンとなり、
スイッチ26がオフとなる。このとき、半導体レーザ1
2は駆動回路13によって駆動されて発光するととも
に、低周波項の寄生容量C1 を充電する。次に、伝送信
号がローレベルのときにスイッチ11がオフとなりスイ
ッチ26がオンとなる。このとき、半導体レーザ12は
スイッチ26を介して印加される基準電圧Vrefによっ
て逆バイアスされ、寄生容量C1 に蓄積された電荷を放
電する。この放電はプリアンプ22の帰還抵抗Rf を介
して行われるが、一般に帰還抵抗Rf の値が数十キロΩ
であるのに対して半導体レーザ12の寄生抵抗R1 は数
メガΩであるので、プリアンプ22の帰還抵抗Rf が時
定数に影響を及ぼすことはない。
The transmission / reception operation will be described below with reference to the timing chart shown in FIG. At the time of transmission, the switch 11 is turned on when the transmission signal is at the high level,
The switch 26 is turned off. At this time, the semiconductor laser 1
2 is driven by the drive circuit 13 to emit light, and charges the parasitic capacitance C 1 of the low frequency term. Next, when the transmission signal is low level, the switch 11 is turned off and the switch 26 is turned on. At this time, the semiconductor laser 12 is reverse-biased by the reference voltage Vref applied via the switch 26 and discharges the electric charge accumulated in the parasitic capacitance C 1 . This discharge is performed via the feedback resistor Rf of the preamplifier 22, but the value of the feedback resistor Rf is generally several tens of kilohms.
On the other hand, since the parasitic resistance R 1 of the semiconductor laser 12 is several megaΩ, the feedback resistance Rf of the preamplifier 22 does not affect the time constant.

【0020】また、このときゲート回路41によって比
較回路24の出力を遮断することにより、プリアンプ2
2の出力電圧レベルが変動してもレベル変換回路25の
出力をローレベルに固定することができる。この動作は
スイッチ(21)のオンオフ動作と異なり、特性に影響
を与えることはない。
At this time, the output of the comparison circuit 24 is cut off by the gate circuit 41, so that the preamplifier 2
Even if the output voltage level of 2 fluctuates, the output of the level conversion circuit 25 can be fixed at a low level. This operation does not affect the characteristics, unlike the on / off operation of the switch (21).

【0021】受信時には、スイッチ11がオフとなり、
スイッチ26がオンとなる。半導体レーザ12はスイッ
チ26を介して基準電圧Vref が印加され、受光素子と
して機能する。光信号に応じた検出電流は、プリアンプ
22,ゲインコントロールアンプ23,比較回路24を
介して従来と同様に処理され、その出力信号がゲート回
路41を介してレベル変換回路25に入力され、所定の
レベルに変換して出力される。
During reception, the switch 11 is turned off,
The switch 26 is turned on. The semiconductor laser 12 receives the reference voltage Vref via the switch 26 and functions as a light receiving element. The detection current corresponding to the optical signal is processed by the preamplifier 22, the gain control amplifier 23, and the comparison circuit 24 in the same manner as in the conventional case, and the output signal thereof is input to the level conversion circuit 25 via the gate circuit 41 and a predetermined value is obtained. Converted to a level and output.

【0022】図8は、S/R信号に応じて送信モードか
ら受信モードに切り替えたときの本実施例におけるプリ
アンプ22の出力波形を示す。本実施例の構成では、送
信時に伝送信号がローレベルになる度に半導体レーザ1
2に逆バイアスをかけ、蓄積した電荷を放電させている
ので、送信モードから受信モードへ切り替えたときの蓄
積電荷が少なく、送受信切り替え時の保護時間を大幅に
短縮することができる。
FIG. 8 shows an output waveform of the preamplifier 22 in this embodiment when the transmission mode is switched to the reception mode according to the S / R signal. In the configuration of this embodiment, the semiconductor laser 1 is used every time the transmission signal becomes low level during transmission.
Since 2 is reverse biased to discharge the accumulated charge, the accumulated charge is small when the transmission mode is switched to the reception mode, and the protection time at the time of transmission / reception switching can be greatly shortened.

【0023】図3は、本発明の第2実施例の構成を示
す。本実施例の特徴は、第1実施例の構成に加えて、半
導体レーザ12のカソードとアノードとの間に電圧フォ
ロア回路42およびスイッチ43を接続したところにあ
る。
FIG. 3 shows the configuration of the second embodiment of the present invention. The feature of this embodiment is that, in addition to the structure of the first embodiment, a voltage follower circuit 42 and a switch 43 are connected between the cathode and the anode of the semiconductor laser 12.

【0024】切替制御回路31cは、S/R信号を反転
してゲート回路41およびスイッチ43に与える反転回
路32と、S/R信号と伝送信号とを入力するアンド回
路33と、S/R信号と反転した伝送信号とを入力する
アンド回路36と、アンド回路33およびアンド回路3
6の出力に所定の遅延τを与える遅延回路35a,35
bとにより構成される。遅延回路35aの出力はスイッ
チ11に与えられ、遅延回路35bの出力はスイッチ2
6に与えられる。なお、遅延回路35a,35bは、駆
動回路13内の伝搬遅延による半導体レーザ12の駆動
タイミングと、スイッチ11,26の切り替えタイミン
グとを調整するために設けられる。
The switching control circuit 31c includes an inverting circuit 32 which inverts the S / R signal and gives it to the gate circuit 41 and the switch 43, an AND circuit 33 which inputs the S / R signal and the transmission signal, and an S / R signal. AND circuit 36 for inputting the inverted transmission signal and AND circuit 33 and AND circuit 3
Delay circuits 35a, 35 for giving a predetermined delay τ to the output of 6
and b. The output of the delay circuit 35a is given to the switch 11, and the output of the delay circuit 35b is given to the switch 2.
6 given. The delay circuits 35a and 35b are provided to adjust the drive timing of the semiconductor laser 12 due to the propagation delay in the drive circuit 13 and the switching timing of the switches 11 and 26.

【0025】送信時の動作は、スイッチ43がオフとな
る他は第1実施例と同様である。受信時には、スイッチ
11,26がオフとなり、スイッチ43がオンとなる。
半導体レーザ12は電圧フォロア回路42により無バイ
アス状態となり、暗電流の影響が抑制される。これによ
り、暗電流による最小受光レベルの劣化を改善すること
ができる。その他の各部の動作は第1実施例と同じであ
る。
The operation at the time of transmission is the same as that of the first embodiment except that the switch 43 is turned off. During reception, the switches 11 and 26 are turned off and the switch 43 is turned on.
The semiconductor laser 12 is put into a non-biased state by the voltage follower circuit 42, and the influence of dark current is suppressed. As a result, the deterioration of the minimum light receiving level due to the dark current can be improved. The operation of the other parts is the same as in the first embodiment.

【0026】[0026]

【発明の効果】以上説明したように、本発明の光送受信
回路は、半導体レーザと増幅回路とを送信時に切り離
し、受信時に接続していたスイッチが不要となる。これ
により、このスイッチの雑音および寄生容量を原因とす
る最小受光レベルの劣化が解消され、良好な特性を得る
ことができる。
As described above, in the optical transmitter / receiver circuit of the present invention, the semiconductor laser and the amplifier circuit are separated at the time of transmission, and the switch connected at the time of reception is unnecessary. As a result, deterioration of the minimum light receiving level due to noise and parasitic capacitance of the switch is eliminated, and good characteristics can be obtained.

【0027】また、送信中に、半導体レーザの寄生容量
に充電される電荷が伝送信号1ビットごとに放電される
ので、送信モードから受信モードへ切り替えたときの蓄
積電荷が少なく、送受信切り替え時の保護時間を大幅に
短縮することができる。これにより、伝送効率を高める
ことができる。
Further, during transmission, since the electric charge charged in the parasitic capacitance of the semiconductor laser is discharged for each bit of the transmission signal, the accumulated electric charge is small when the transmission mode is switched to the reception mode, and when the transmission / reception is switched. The protection time can be greatly reduced. Thereby, the transmission efficiency can be improved.

【0028】また、受信時に半導体レーザの両端子間に
電圧フォロア回路を接続することにより、半導体レーザ
の暗電流の影響が抑制され、特性向上を図ることができ
る。
Further, by connecting the voltage follower circuit between both terminals of the semiconductor laser at the time of reception, the influence of the dark current of the semiconductor laser can be suppressed and the characteristics can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1実施例の構成を示すブロック図。FIG. 1 is a block diagram showing a configuration of a first embodiment of the present invention.

【図2】第1実施例のタイミングチャート。FIG. 2 is a timing chart of the first embodiment.

【図3】本発明の第2実施例の構成を示すブロック図。FIG. 3 is a block diagram showing the configuration of a second embodiment of the present invention.

【図4】第2実施例のタイミングチャート。FIG. 4 is a timing chart of the second embodiment.

【図5】半導体レーザを用いた従来の光送受信回路の構
成を示すブロック図。
FIG. 5 is a block diagram showing a configuration of a conventional optical transmission / reception circuit using a semiconductor laser.

【図6】半導体レーザの等価回路を示す図。FIG. 6 is a diagram showing an equivalent circuit of a semiconductor laser.

【図7】従来構成におけるプリアンプ22の出力波形を
示す図。
FIG. 7 is a diagram showing an output waveform of a preamplifier 22 in a conventional configuration.

【図8】第1実施例におけるプリアンプ22の出力波形
を示す図。
FIG. 8 is a diagram showing an output waveform of the preamplifier 22 in the first embodiment.

【符号の説明】[Explanation of symbols]

10 電源(VDD)端子 11,21,26,43 スイッチ 12 半導体レーザ 13 駆動回路 22 プリアンプ 23 ゲインコントロールアンプ(GCA) 24 比較回路 25 レベル変換回路 27 基準電圧(Vref)端子 31 切替制御回路 32 反転回路 33,36 アンド回路 34 ナンド回路 35 遅延回路(τ) 41 ゲート回路 42 電圧フォロア回路10 power supply (V DD ) terminal 11, 21, 26, 43 switch 12 semiconductor laser 13 drive circuit 22 preamplifier 23 gain control amplifier (GCA) 24 comparison circuit 25 level conversion circuit 27 reference voltage (Vref) terminal 31 switching control circuit 32 inversion Circuit 33, 36 AND circuit 34 NAND circuit 35 Delay circuit (τ) 41 Gate circuit 42 Voltage follower circuit

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H04B 10/26 10/14 10/04 10/06 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication H04B 10/26 10/14 10/04 10/06

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 半導体レーザの第1の端子に電源端子を
接続し、第2の端子に伝送信号によって半導体レーザを
駆動する駆動回路を接続し、半導体レーザから伝送信号
に応じた光信号を出力する光送信回路部と、 前記半導体レーザの第1の端子に増幅回路を接続し、第
2の端子に基準電圧を印加する基準電圧端子を接続し、
前記半導体レーザに受光した光信号に応じた電気信号を
増幅回路から出力する光受信回路部とを備えた光送受信
回路において、 前記半導体レーザの第1の端子と前記電源端子との間に
接続される第1のスイッチと、 前記半導体レーザの第2の端子と前記基準電圧端子との
間に接続される第2のスイッチと、 前記増幅回路の出力段に接続されるゲート回路と、 送信時には、前記ゲート回路を閉じ、伝送信号のハイレ
ベルで前記第1のスイッチをオンとし前記第2のスイッ
チをオフとし、伝送信号のローレベルで前記第1のスイ
ッチをオフとし前記第2のスイッチをオンとし、受信時
には前記第1のスイッチをオフとし、前記第2のスイッ
チをオンとし、前記ゲート回路を開く切替信号を送出す
る切替制御回路とを備えたことを特徴とする光送受信回
路。
1. A power supply terminal is connected to a first terminal of a semiconductor laser, a drive circuit for driving a semiconductor laser by a transmission signal is connected to a second terminal, and an optical signal according to the transmission signal is output from the semiconductor laser. And an optical transmission circuit unit, an amplifier circuit is connected to the first terminal of the semiconductor laser, and a reference voltage terminal for applying a reference voltage to the second terminal,
In an optical transmitter / receiver circuit including an optical receiver circuit section that outputs an electric signal corresponding to an optical signal received by the semiconductor laser from an amplifier circuit, the optical transmitter / receiver circuit is connected between a first terminal of the semiconductor laser and the power supply terminal. A first switch, a second switch connected between the second terminal of the semiconductor laser and the reference voltage terminal, a gate circuit connected to the output stage of the amplifier circuit, and The gate circuit is closed, the first switch is turned on and the second switch is turned off when the transmission signal is at a high level, and the first switch is turned off and the second switch is turned on when the transmission signal is at a low level. And a switching control circuit for turning off the first switch and turning on the second switch at the time of reception to send a switching signal for opening the gate circuit. Receiver circuit.
【請求項2】 請求項1に記載の光送受信回路におい
て、 切替制御回路は、 送信時にハイレベルとなり受信時にローレベルとなる送
受信切替信号と伝送信号の論理積をとるアンド回路と、 前記送受信切替信号と伝送信号の否定論理積をとるナン
ド回路と、 前記アンド回路の出力信号に所定の遅延を与えて第1の
スイッチに与える第1の遅延回路と、 前記ナンド回路の出力信号に所定の遅延を与えて第2の
スイッチに与える第2の遅延回路と、 前記送受信切替信号を反転してゲート回路に与える反転
回路とを備えたことを特徴とする光送受信回路。
2. The optical transmission / reception circuit according to claim 1, wherein the switching control circuit ANDs a logical product of a transmission / reception switching signal that is high level during transmission and low level during reception and a transmission signal, and the transmission / reception switching circuit. A NAND circuit that performs a NAND operation of a signal and a transmission signal, a first delay circuit that gives a predetermined delay to the output signal of the AND circuit and gives the first switch, and a predetermined delay to the output signal of the NAND circuit An optical transmission / reception circuit comprising: a second delay circuit for applying the signal to a second switch and an inverting circuit for inverting the transmission / reception switching signal and applying the inverted signal to a gate circuit.
【請求項3】 半導体レーザの第1の端子に電源端子を
接続し、第2の端子に伝送信号によって半導体レーザを
駆動する駆動回路を接続し、半導体レーザから伝送信号
に応じた光信号を出力する光送信回路部と、 前記半導体レーザの第1の端子に増幅回路を接続し、第
1の端子と第2の端子との間にその間の電位差を零とす
る電圧フォロア回路を接続し、前記半導体レーザに受光
した光信号に応じた電気信号を増幅回路から出力する光
受信回路部とを備えた光送受信回路において、 前記半導体レーザの第1の端子と前記電源端子との間に
接続される第1のスイッチと、 前記半導体レーザの第2の端子と基準電圧端子との間に
接続される第2のスイッチと、 前記電圧フォロア回路に直列に挿入される第3のスイッ
チと、 前記増幅回路の出力段に接続されるゲート回路と、 送信時には、前記ゲート回路を閉じ、前記第3のスイッ
チをオフとし、伝送信号のハイレベルで前記第1のスイ
ッチをオンとし前記第2のスイッチをオフとし、伝送信
号のローレベルで前記第1のスイッチをオフとし前記第
2のスイッチをオンとし、受信時には前記第1のスイッ
チおよび前記第2のスイッチをオフとし、前記第3のス
イッチをオンとし、前記ゲート回路を開く切替信号を送
出する切替制御回路とを備えたことを特徴とする光送受
信回路。
3. A power supply terminal is connected to a first terminal of the semiconductor laser, a drive circuit for driving the semiconductor laser by a transmission signal is connected to the second terminal, and an optical signal corresponding to the transmission signal is output from the semiconductor laser. And an amplifier circuit connected to the first terminal of the semiconductor laser, and a voltage follower circuit for setting a potential difference between the first terminal and the second terminal to zero. An optical transmitter / receiver circuit including an optical receiver circuit section for outputting an electric signal corresponding to an optical signal received by a semiconductor laser from an amplifier circuit, the optical transmitter / receiver circuit being connected between a first terminal of the semiconductor laser and the power supply terminal. A first switch; a second switch connected between a second terminal of the semiconductor laser and a reference voltage terminal; a third switch inserted in series with the voltage follower circuit; and an amplifier circuit. Output stage The gate circuit to be connected, the gate circuit is closed at the time of transmission, the third switch is turned off, the first switch is turned on and the second switch is turned off at a high level of the transmission signal, and the transmission signal is transmitted. At a low level, the first switch is turned off, the second switch is turned on, the first switch and the second switch are turned off at the time of reception, the third switch is turned on, and the gate circuit is turned on. And a switching control circuit for sending a switching signal for opening the optical transmission / reception circuit.
【請求項4】 請求項2に記載の光送受信回路におい
て、 切替制御回路は、 送信時にハイレベルとなり受信時にローレベルとなる送
受信切替信号と伝送信号の論理積をとる第1のアンド回
路と、 前記送受信切替信号と反転した伝送信号の論理積をとる
第2のアンド回路と、 前記第1のアンド回路の出力信号に所定の遅延を与えて
第1のスイッチに与える第1の遅延回路と、 前記第2のアンド回路の出力信号に所定の遅延を与えて
第2のスイッチに与える第2の遅延回路と、 前記送受信切替信号を反転してゲート回路および第3の
スイッチに与える反転回路とを備えたことを特徴とする
光送受信回路。
4. The optical transmitter / receiver circuit according to claim 2, wherein the switching control circuit ANDs a transmission / reception switch signal that is at a high level during transmission and is at a low level during reception and a transmission signal. A second AND circuit that takes a logical product of the transmission / reception switching signal and the inverted transmission signal; and a first delay circuit that gives a predetermined delay to the output signal of the first AND circuit to give it to the first switch, A second delay circuit for giving a predetermined delay to the output signal of the second AND circuit and giving it to the second switch; and an inverting circuit for inverting the transmission / reception switching signal and giving it to the gate circuit and the third switch. An optical transmitter / receiver circuit characterized by being provided.
JP6165413A 1994-07-18 1994-07-18 Optical transmission and reception circuit Pending JPH0832517A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6165413A JPH0832517A (en) 1994-07-18 1994-07-18 Optical transmission and reception circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6165413A JPH0832517A (en) 1994-07-18 1994-07-18 Optical transmission and reception circuit

Publications (1)

Publication Number Publication Date
JPH0832517A true JPH0832517A (en) 1996-02-02

Family

ID=15811948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6165413A Pending JPH0832517A (en) 1994-07-18 1994-07-18 Optical transmission and reception circuit

Country Status (1)

Country Link
JP (1) JPH0832517A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998018222A1 (en) * 1996-10-18 1998-04-30 Hitachi, Ltd. Optical transmitter and optical transmission system
WO1998018221A1 (en) * 1996-10-18 1998-04-30 Hitachi, Ltd. Optical transmitter and optical transmission system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998018222A1 (en) * 1996-10-18 1998-04-30 Hitachi, Ltd. Optical transmitter and optical transmission system
WO1998018221A1 (en) * 1996-10-18 1998-04-30 Hitachi, Ltd. Optical transmitter and optical transmission system

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