JPH08320257A - Infrared detecting device - Google Patents

Infrared detecting device

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Publication number
JPH08320257A
JPH08320257A JP12853895A JP12853895A JPH08320257A JP H08320257 A JPH08320257 A JP H08320257A JP 12853895 A JP12853895 A JP 12853895A JP 12853895 A JP12853895 A JP 12853895A JP H08320257 A JPH08320257 A JP H08320257A
Authority
JP
Japan
Prior art keywords
voltage
bridge
circuit
resistance
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP12853895A
Other languages
Japanese (ja)
Inventor
Hironori Kami
浩則 上
Mitsuteru Hataya
光輝 畑谷
Kazunori Kidera
和憲 木寺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP12853895A priority Critical patent/JPH08320257A/en
Publication of JPH08320257A publication Critical patent/JPH08320257A/en
Withdrawn legal-status Critical Current

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Abstract

PURPOSE: To provide an infrared detecting device in which the measuring time can be shortened with a simple structure. CONSTITUTION: Four thermistors Th1 -Th4 are bridge-connected to constitute a bolometer bridge 1. The series circuit of the bolometer bridge 1 and a resistor Ra is connected to both ends of a DC power source 2. This device has a bridge- to-bridge voltage detecting circuit 3 for detecting the voltage between bridges of the bolometer bridge 1, and a resistor end-to-end voltage detecting circuit 4 for detecting the voltage between both ends of the resistor Ra. Namely, the detection of the voltage between bridges of the bolometer bridge 1 and the detection of the voltage between both ends of the resistor Ra by the resistor end-to-end voltage detecting circuit 4 can be simultaneously performed, and the measuring time can be shortened with a simple structure.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、サーミスタを用いたボ
ロメータブリッジにより入射赤外線量を検出する赤外線
検出装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared detector for detecting the amount of incident infrared rays by a bolometer bridge using a thermistor.

【0002】[0002]

【従来の技術】従来より、サーミスタを用いたボロメー
タブリッジにより入射赤外線量を検出する赤外線検出装
置は、対象物の温度を非接触で測定できる放射温度計に
応用される場合があった。上記赤外線検出装置によって
対象物の温度測定を行なう場合には、対象物から放射さ
れてボロメータブリッジに入射される赤外線量の測定
と、入射赤外線によるサーミスタの抵抗値変化に基づく
ボロメータブリッジの温度測定との2つの測定を行なう
必要があった。すなわち、図4に示すようなボロメータ
たるサーミスタTh1 〜Th4 をブリッジ接続して成る
ボロメータブリッジ1と抵抗Rb1 〜Rb3 とのブリッ
ジ回路を直流電源2の両端に接続した回路構成におい
て、ブリッジ回路のブリッジ間電圧を電圧検出回路10
により検出してボロメータブリッジ1の抵抗値を求める
ことによるボロメータブリッジ1の温度測定と、図5に
示すような直流電源2の両端にボロメータブリッジ1を
接続した回路構成において、ボロメータブリッジ1のブ
リッジ間電圧をブリッジ間電圧検出回路11によって検
出することによる入射赤外線量の測定との2つの測定が
必要であった。
2. Description of the Related Art Conventionally, an infrared detector for detecting an incident infrared ray amount by a bolometer bridge using a thermistor has been sometimes applied to a radiation thermometer capable of measuring the temperature of an object in a non-contact manner. When measuring the temperature of the object by the infrared detection device, the measurement of the amount of infrared rays emitted from the object and incident on the bolometer bridge, and the temperature measurement of the bolometer bridge based on the resistance change of the thermistor due to the incident infrared rays. It was necessary to make two measurements of That is, in a circuit configuration in which a bolometer bridge 1 formed by connecting thermistors Th 1 to Th 4 as bolometers and resistors Rb 1 to Rb 3 as shown in FIG. The voltage between the bridge of the circuit is detected by the voltage detection circuit 10
Between the bolometer bridges 1 in the circuit configuration in which the bolometer bridges 1 are connected to both ends of the DC power supply 2 as shown in FIG. It was necessary to perform two measurements, that is, the measurement of the amount of incident infrared rays by detecting the voltage by the inter-bridge voltage detection circuit 11.

【0003】[0003]

【発明が解決しようとする課題】ところが、上記従来構
成においては、2つの測定を行なうためには、図4に示
す回路構成と図5に示す回路構成とをそれぞれ別々に備
えるか、あるいは2つの回路構成を切り換える切換手段
を設ける必要があり、回路構成が複雑になったり、ある
いは2つの測定を順次行なうために最終的な対象物の温
度測定に時間がかかるという問題があった。
However, in the above-mentioned conventional configuration, in order to perform two measurements, the circuit configuration shown in FIG. 4 and the circuit configuration shown in FIG. 5 are separately provided, or two circuit configurations are provided. It is necessary to provide a switching means for switching the circuit configuration, and there is a problem that the circuit configuration becomes complicated or that it takes time to finally measure the temperature of the object because two measurements are performed sequentially.

【0004】本発明は上記問題点の解決を目的とするも
のであり、簡単な構成により測定時間の短縮が図れる赤
外線検出装置を提供しようとするものである。
The present invention is intended to solve the above problems, and an object of the present invention is to provide an infrared detection device capable of shortening the measurement time with a simple structure.

【0005】[0005]

【課題を解決するための手段】請求項1の発明は、上記
目的を達成するために、サーミスタを用いたボロメータ
ブリッジにより入射赤外線量を検出する赤外線検出装置
であって、ボロメータブリッジと抵抗部の直列回路を直
流電源の両端に接続し、ボロメータブリッジのブリッジ
間電圧を検出するブリッジ間電圧検出回路と、抵抗部の
両端電圧を検出する抵抗両端電圧検出回路とを設けて成
ることを特徴とする。
In order to achieve the above-mentioned object, the invention of claim 1 is an infrared detector for detecting an incident infrared ray amount by a bolometer bridge using a thermistor, which comprises a bolometer bridge and a resistor part. A series circuit is connected to both ends of a DC power supply, and an inter-bridge voltage detection circuit that detects the inter-bridge voltage of the bolometer bridge and a resistance-both-end voltage detection circuit that detects the two-end voltage of the resistor section are provided. .

【0006】請求項2の発明は、請求項1の発明におい
て、抵抗値を可変できる上記抵抗部と、上記抵抗両端電
圧検出回路の検出出力に応じて上記抵抗部の抵抗値を可
変する制御回路とを設けて成ることを特徴とする。
According to a second aspect of the present invention, in the first aspect of the present invention, the resistance portion whose resistance value can be varied, and the control circuit which varies the resistance value of the resistance portion according to the detection output of the voltage across the resistance detection circuit. And is provided.

【0007】[0007]

【作用】請求項1の発明の構成では、ボロメータブリッ
ジと抵抗部の直列回路を直流電源の両端に接続し、ボロ
メータブリッジのブリッジ間電圧を検出するブリッジ間
電圧検出回路と、抵抗部の両端電圧を検出する抵抗両端
電圧検出回路とを設けたので、対象物の温度を非接触で
測定する場合に、ブリッジ間電圧検出回路による赤外線
量測定と、抵抗両端電圧検出回路によるボロメータブリ
ッジの温度測定とを同時に行なうことができ、簡単な構
成により対象物の温度の測定時間を短縮することができ
る。
According to the first aspect of the present invention, the series circuit of the bolometer bridge and the resistor section is connected to both ends of the DC power supply to detect the inter-bridge voltage of the bolometer bridge, and the voltage across the resistor section. Since a voltage detection circuit across the resistor to detect the temperature is provided, when measuring the temperature of the object in a non-contact manner, the infrared amount measurement by the voltage detection circuit between bridges and the temperature measurement of the bolometer bridge by the voltage detection circuit across the resistance are performed. Can be performed simultaneously, and the temperature measurement time of the object can be shortened with a simple configuration.

【0008】請求項2の発明の構成では、抵抗値を可変
できる上記抵抗部と、上記抵抗両端電圧検出回路の検出
出力に応じて上記抵抗部の抵抗値を可変する制御回路と
を設けたので、ボロメータブリッジを構成するサーミス
タに対する測定時の雰囲気温度の影響を低減し、対象物
の温度測定の精度を高めることができる。
According to the second aspect of the invention, since the resistance portion whose resistance value can be varied and the control circuit which varies the resistance value of the resistance portion according to the detection output of the voltage across the resistance detection circuit are provided. It is possible to reduce the influence of the ambient temperature at the time of measurement on the thermistor forming the bolometer bridge, and improve the accuracy of temperature measurement of the object.

【0009】[0009]

【実施例】【Example】

(実施例1)図1は本発明の第1の実施例を示す回路構
成図であり、基本的な構成は従来例と共通であるので共
通する部分には同一の符号を付して説明は省略し、本実
施例の特徴となる部分についてのみ説明する。
(Embodiment 1) FIG. 1 is a circuit configuration diagram showing a first embodiment of the present invention. Since the basic configuration is common to that of the conventional example, the same parts are designated by the same reference numerals and their description will be omitted. The description will be omitted, and only the characteristic parts of this embodiment will be described.

【0010】本実施例は、ボロメータブリッジ1と抵抗
Raとの直列回路を直流電源2の両端に接続し、ボロメ
ータブリッジ1のブリッジ間電圧(同図におけるa−b
間電圧)を検出するブリッジ間電圧検出回路3と、抵抗
Raの両端電圧を検出する抵抗両端電圧検出回路4とを
設けた点に特徴がある。なお、ブリッジ間電圧検出回路
3及び抵抗両端電圧検出回路4は2点間の電圧を測定す
る周知の構成を有するものであり、その構成は本発明の
要旨ではないので説明は省略する。
In this embodiment, a series circuit of a bolometer bridge 1 and a resistor Ra is connected to both ends of a DC power source 2, and a voltage between the bridges of the bolometer bridge 1 (ab in FIG.
It is characterized in that the inter-bridge voltage detection circuit 3 for detecting the inter-bridge voltage and the resistance voltage detection circuit 4 for detecting the voltage across the resistor Ra are provided. The bridge-to-bridge voltage detection circuit 3 and the resistance-both-ends voltage detection circuit 4 have a well-known configuration for measuring a voltage between two points. Since the configurations are not the gist of the present invention, the description thereof will be omitted.

【0011】すなわち、本実施例の構成によれば、ブリ
ッジ間電圧検出回路3によるボロメータブリッジ1のブ
リッジ間電圧の検出と、抵抗両端電圧検出回路4による
抵抗Raの両端電圧の検出とを同時に行なうことができ
る。次に、本実施例の赤外線検出装置を用いて対象物の
温度を非接触にて測定する原理について説明する。
That is, according to the configuration of this embodiment, the inter-bridge voltage detection circuit 3 detects the inter-bridge voltage of the bolometer bridge 1 and the resistance end-to-end voltage detection circuit 4 detects the end-to-end voltage of the resistor Ra at the same time. be able to. Next, the principle of non-contact measurement of the temperature of the object using the infrared detection device of this embodiment will be described.

【0012】まず、ボロメータブリッジ1を構成するサ
ーミスタTh1 …の抵抗値Rと、サーミスタTh1 …の
温度との間には下式のような関係がある。 R=R0 exp{B(1/T−1/T0 )} 但し、B :サーミスタのB定数 R0 :温度T0 におけるサーミスタTh1 …の抵抗値 したがって、このときの抵抗Raの両端電圧をV1 、ボ
ロメータブリッジ間電圧をV2 、電源電圧をV3 、サー
ミスタTh1 …の抵抗値をR1 とすると、ボロメータブ
リッジ1を構成する1つのサーミスタ(例えば、サーミ
スタTh1 )の温度T1 は次式にて表される。
[0012] First, a thermistor Th 1 ... resistance R constituting the bolometer bridge 1, related as the following equation between the thermistor Th 1 ... temperature. R = R 0 exp {B (1 / T-1 / T 0 )} where B: B constant of the thermistor R 0 : Resistance value of the thermistor Th 1 at the temperature T 0 Therefore, the voltage across the resistor Ra at this time Is V 1 , the voltage between bolometer bridges is V 2 , the power supply voltage is V 3 , and the resistance value of the thermistor Th 1 is R 1 , the temperature T of one thermistor (for example, thermistor Th 1 ) that constitutes the bolometer bridge 1. 1 is expressed by the following equation.

【0013】[0013]

【式1】 (Equation 1)

【0014】但し、R1 =(V3 /V1 −1)Ra(R
aは抵抗Raの抵抗値)であり、対象物以外の周囲から
の入射赤外線によるサーミスタTh1 の温度変化は非常
に小さく、よってサーミスタTh1 の抵抗値変化に対す
る入射赤外線の影響はほとんど無視できる。いま、温度
を測定しようとする対象物から放射される赤外線をボロ
メータブリッジ1を構成する1つのサーミスタTh1
入射させると、入射赤外線によってサーミスタTh1
温度が変化してその抵抗値がR1 からR2 へと変化す
る。ここで、サーミスタTh1 の温度をT2 、赤外線が
入射されない他のサーミスタTh2 〜Th4 の温度をT
1 及びその抵抗値をR1 とすると、赤外線が入射された
サーミスタTh1 の温度T2 は次式にて表される。
However, R 1 = (V 3 / V 1 -1) Ra (R
a is the resistance value of the resistance Ra), and the temperature change of the thermistor Th 1 due to the incident infrared rays from the surroundings other than the object is very small, so that the influence of the incident infrared rays on the resistance value change of the thermistor Th 1 can be almost ignored. Now, when infrared rays emitted from an object whose temperature is to be measured are incident on one thermistor Th 1 which constitutes the bolometer bridge 1, the temperature of the thermistor Th 1 is changed by the incident infrared rays and the resistance value thereof is R 1 To R 2 . Here, the temperature of the thermistor Th 1 is T 2 , and the temperatures of the other thermistors Th 2 to Th 4 to which infrared rays are not incident are T 2 .
Letting 1 and its resistance value be R 1 , the temperature T 2 of the thermistor Th 1 on which infrared rays are incident is expressed by the following equation.

【0015】[0015]

【式2】 (Equation 2)

【0016】但し、R2 /R1 =(V1 −2V2
3 )/(V1 +2V2 −V3 )である。一方、サーミ
スタTh1 に照射される赤外線量Qは、放射率をε、ス
テファン・ボルツマン定数をσ、測定面積(照射面積)
をS、対象物の温度をTaとすれば次式で表される。 Q=εσS(Ta4 −T1 4 ) また、サーミスタTh1 の熱容量をCとすると下式の関
係が成立する。
[0016] However, R 2 / R 1 = ( V 1 -2V 2 -
V 3) is / (V 1 + 2V 2 -V 3). On the other hand, the infrared ray amount Q radiated to the thermistor Th 1 is emissivity ε, Stefan-Boltzmann constant σ, measured area (irradiated area)
Let S be the temperature of the object and Ta be the temperature of the object. Q = εσS The (Ta 4 -T 1 4), the following expression of relation is established when the heat capacity of the thermistor Th 1 and C.

【0017】 εσS(Ta4 −T1 4 )=C(T2 −T1 ) 従って、これらの式から対象物の温度Taは次式により
求めることができる。
[0017] εσS (Ta 4 -T 1 4) = C (T 2 -T 1) Therefore, the temperature Ta of the object from these equations can be obtained by the following equation.

【0018】[0018]

【式3】 (Equation 3)

【0019】なお、上記各式に対応した演算は、図示し
ない演算処理手段(例えば、マイクロコンピュータな
ど)で実行すればよい。上記構成によれば、赤外線検出
装置を使って対象物の温度測定を行なう際に、入射赤外
線量Qの測定(抵抗Raの両端電圧V1 の測定)と、ボ
ロメータブリッジ1の温度測定(ブリッジ間電圧V2
測定)とを同時に行なうことができ、従来例に比較して
簡単な構成により対象物の温度の測定時間を短縮するこ
とができる。なお、検出精度を高めるためにはボロメー
タブリッジ1のブリッジ間電圧V 2 は高い方が望まし
く、そのためにはボロメータブリッジ1に印加される電
源電圧V3 を大きくする必要があり、ボロメータブリッ
ジ1に直列に接続される抵抗Raの抵抗値はサーミスタ
Th1 …の抵抗値に比較して小さいことが望ましい。
The operations corresponding to the above equations are shown in the figure.
No arithmetic processing means (for example, a microcomputer
Do) According to the above configuration, infrared detection
When measuring the temperature of an object using the device, the incident infrared
Measurement of dose Q (voltage V across resistor Ra1Measurement)
Temperature measurement of the meter bridge 1 (voltage between bridges V2of
(Measurement) and can be performed at the same time.
The simple configuration can reduce the temperature measurement time of the object.
You can In order to improve the detection accuracy,
Voltage between bridges of bridge 1 2Higher is desired
For that purpose, the voltage applied to the bolometer bridge 1 is
Source voltage V3The bolometer bridge
The resistance value of the resistor Ra connected in series to the di1 is the thermistor.
Th1It is desirable that it is smaller than the resistance value of.

【0020】(実施例2)図2は本発明の第2の実施例
を示す回路構成図である。なお、本実施例の基本構成は
実施例1と共通であり、共通する部分には同一の符号を
付して説明は省略し、本実施例の特徴となる部分につい
てのみ説明する。一般に、赤外線検出装置においては検
出感度を高くするためにボロメータブリッジ1を構成す
るサーミスタTh1 …には、できる限り抵抗値の温度変
化が大きいものを用いている。従って、測定環境の雰囲
気温度によるサーミスタTh1 …の抵抗値の温度変化が
大きくなり、雰囲気温度の変化に対して抵抗両端電圧検
出回路3の検出出力も大きく変化してしまうことにな
る。例えば、サーミスタTh 1 …の抵抗値R1 の1%の
変化に対して、抵抗両端電圧検出回路3の検出出力V 1
の変化ΔV1 は次式にて表される。
(Second Embodiment) FIG. 2 shows a second embodiment of the present invention.
It is a circuit block diagram showing. The basic configuration of this embodiment is
It is common with the first embodiment, and the same reference numerals are used for the common parts.
The explanation is omitted and the characteristic parts of this embodiment are described.
Only explained. Generally, in infrared detectors,
Configure bolometer bridge 1 to increase output sensitivity
Thermistor Th1... is the temperature variation of the resistance as much as possible.
The one that has a large variation is used. Therefore, the atmosphere of the measurement environment
Thermistor Th depending on air temperature1The temperature change of the resistance value of
The voltage across the resistance is detected against changes in ambient temperature.
The detection output of the output circuit 3 will also change greatly.
It For example, the thermistor Th 1Resistance value R of11% of
The detection output V of the voltage across the resistor 3 with respect to the change 1
Change ΔV1Is expressed by the following equation.

【0021】[0021]

【式4】 (Equation 4)

【0022】従って、抵抗Raの抵抗値Raとサーミス
タTh1 …の抵抗値R1 との抵抗比に対してΔV1 は下
表のように大きな差が生じることになる。
Therefore, the difference ΔV 1 with respect to the resistance ratio between the resistance value Ra of the resistance Ra and the resistance value R 1 of the thermistor Th 1 ...

【0023】[0023]

【表1】 [Table 1]

【0024】このように、抵抗両端電圧検出回路3の出
力電圧V1 が測定環境の雰囲気温度の変化によって大き
く変化し、サーミスタTh1 …の抵抗値R1 が雰囲気温
度の変化によって大きくなると、上記出力電圧V1 の変
化量ΔV1 が小さくなり、赤外線検出装置としての検出
感度が低下してしまう。そこで、本実施例は上述のよう
な測定環境の雰囲気温度の変化による検出感度の低下を
防止することを目的として、実施例1の抵抗Raの代わ
りに、抵抗値の相異なる複数の抵抗Ra1 〜Ra4 を並
列接続して成る抵抗アレイ5と、これら抵抗アレイ4の
抵抗Ra1 〜Ra4 のうちの少なくとも1つを選択的に
ボロメータブリッジ1に切換接続するためのスイッチン
グ回路6とをボロメータブリッジ1に直列に接続すると
ともに、スイッチング回路6によってボロメータブリッ
ジ1に切換接続された抵抗Ra1 …の両端電圧を検出す
る抵抗両端電圧検出回路3の検出出力に応じて、スイッ
チング回路6による切り換えを制御する制御回路7を設
けた点に特徴がある。
As described above, when the output voltage V 1 of the voltage detecting circuit 3 across the resistance greatly changes due to the change of the ambient temperature of the measurement environment, and the resistance value R 1 of the thermistor Th 1 increases according to the change of the ambient temperature, becomes small variation [Delta] V 1 of the output voltage V 1, the detection sensitivity of the infrared detection device is reduced. Therefore, in the present embodiment, in order to prevent the detection sensitivity from being lowered due to the change in the ambient temperature of the measurement environment as described above, a plurality of resistors Ra 1 having different resistance values are used instead of the resistor Ra 1 of the first embodiment. a resistor array 5 comprising the to Ra 4 are connected in parallel, a bolometer and a switching circuit 6 for selectively switching coupled to bolometer bridge 1 at least one of the resistors Ra 1 to Ra 4 of these resistor arrays 4 Switching is performed by the switching circuit 6 according to the detection output of the resistor voltage detection circuit 3 that detects the voltage across the resistor Ra 1 that is connected to the bridge 1 in series and that is switched and connected to the bolometer bridge 1 by the switching circuit 6. It is characterized in that a control circuit 7 for controlling is provided.

【0025】本実施例においては、測定環境の雰囲気温
度によるサーミスタTh1 …の抵抗値変化に対応して変
化する抵抗両端電圧検出回路3の出力電圧V1 を制御回
路7に取り込み、この出力電圧V1 を予め設定された基
準電圧と比較するとともに比較結果に応じて制御回路7
がスイッチング回路6を制御してボロメータブリッジ1
に接続される抵抗Ra1 〜Ra4 を切り換え、測定環境
の雰囲気温度の変化に対してΔV1 が略一定に保たれる
ようにしている。
In this embodiment, the output voltage V 1 of the voltage across the resistor 3 which changes in response to a change in the resistance value of the thermistor Th 1 ... The control circuit 7 compares V 1 with a preset reference voltage and depending on the comparison result.
Controls the switching circuit 6 to control the bolometer bridge 1
The resistors Ra 1 to Ra 4 connected to are switched so that ΔV 1 is kept substantially constant with respect to changes in the ambient temperature of the measurement environment.

【0026】図3は制御回路7の一例を示す回路図であ
り、電源電圧VDDを分圧して基準電圧Vr1 ,Vr2
得る分圧抵抗r1 〜r3 と、抵抗両端電圧検出回路3の
出力電圧V1 を基準電圧Vr1 ,Vr2 とそれぞれ比較
するコンパレータCP1 ,CP2 とを備えている。ここ
で、基準電圧Vr1 ,Vr2 はそれぞれ次式にて表され
る。
FIG. 3 is a circuit diagram showing an example of the control circuit 7. The voltage dividing resistors r 1 to r 3 for dividing the power supply voltage V DD to obtain the reference voltages Vr 1 and Vr 2 and the voltage detection circuit across the resistors. It is provided with comparators CP 1 and CP 2 for comparing the output voltage V 1 of No. 3 with reference voltages Vr 1 and Vr 2 , respectively. Here, the reference voltages Vr 1 and Vr 2 are expressed by the following equations, respectively.

【0027】 Vr1 =(r2 +r3 )/(r1 +r2 +r3 )・VDD Vr2 =r3 /(r1 +r2 +r3 )・VDD そして、この制御回路7は、測定環境における雰囲気温
度が上昇することで抵抗両端電圧検出回路3の出力電圧
1 が基準電圧Vr1 より大きくなれば、コンパレータ
CP1 の出力がHレベルとなってスイッチング回路6を
切り換え制御して抵抗アレイ5の抵抗値を減少させ、反
対に、測定環境における雰囲気温度が下降することで抵
抗両端電圧検出回路3の出力電圧V1 が基準電圧Vr2
より小さくなれば、コンパレータCP2 の出力がLレベ
ルとなってスイッチング回路6を切り換え制御して抵抗
アレイ5の抵抗値を増大させるように動作する。
Vr 1 = (r 2 + r 3 ) / (r 1 + r 2 + r 3 ) · V DD Vr 2 = r 3 / (r 1 + r 2 + r 3 ) · V DD And this control circuit 7 measures If the output voltage V 1 of the voltage across the resistance detection circuit 3 becomes higher than the reference voltage Vr 1 due to the increase of the ambient temperature in the environment, the output of the comparator CP 1 becomes H level and the switching circuit 6 is switched to control the resistance. The resistance value of the array 5 is decreased, and conversely, the ambient temperature in the measurement environment is lowered, so that the output voltage V 1 of the voltage across the resistance detection circuit 3 becomes the reference voltage Vr 2
If it becomes smaller, the output of the comparator CP 2 goes to L level, and the switching circuit 6 is switched and controlled to increase the resistance value of the resistor array 5.

【0028】上記構成によれば、測定環境の雰囲気温度
による抵抗両端電圧検出回路3の出力電圧V1 の変化に
基づいて、制御回路7によりスイッチング回路6を切り
換え制御してボロメータブリッジ1に接続される抵抗ア
レイ5の抵抗値を可変するようにしたので、測定環境の
雰囲気温度の変化に対するボロメータブリッジ1への影
響を低減し、対象物の温度測定に用いる場合にその測定
精度を高めることができる。
According to the above configuration, the control circuit 7 switches and controls the switching circuit 6 on the basis of the change in the output voltage V 1 of the voltage across the resistance detection circuit 3 due to the ambient temperature of the measurement environment and is connected to the bolometer bridge 1. Since the resistance value of the resistance array 5 is variable, the influence on the bolometer bridge 1 with respect to the change in the ambient temperature of the measurement environment can be reduced, and the measurement accuracy can be improved when the temperature is measured for the object. .

【0029】[0029]

【発明の効果】請求項1の発明は、サーミスタを用いた
ボロメータブリッジにより入射赤外線量を検出する赤外
線検出装置であって、ボロメータブリッジと抵抗部の直
列回路を直流電源の両端に接続し、ボロメータブリッジ
のブリッジ間電圧を検出するブリッジ間電圧検出回路
と、抵抗部の両端電圧を検出する抵抗両端電圧検出回路
とを設けたので、対象物の温度を非接触で測定する場合
に、ブリッジ間電圧検出回路による赤外線量測定と、抵
抗両端電圧検出回路によるボロメータブリッジの温度測
定とを同時に行なうことができ、簡単な構成により対象
物の温度の測定時間を短縮することができるという効果
がある。
According to the first aspect of the present invention, there is provided an infrared detecting device for detecting an incident infrared ray amount by a bolometer bridge using a thermistor, wherein a series circuit of the bolometer bridge and the resistor section is connected to both ends of a DC power source. Since the inter-bridge voltage detection circuit that detects the inter-bridge voltage of the bridge and the resistance both-end voltage detection circuit that detects the both-end voltage of the resistance part are provided, the inter-bridge voltage is measured when the temperature of the object is measured in a non-contact manner. The infrared amount measurement by the detection circuit and the temperature measurement of the bolometer bridge by the resistance voltage detection circuit can be performed at the same time, and there is an effect that the measurement time of the temperature of the object can be shortened with a simple configuration.

【0030】請求項2の発明は、抵抗値を可変できる上
記抵抗部と、上記抵抗両端電圧検出回路の検出出力に応
じて上記抵抗部の抵抗値を可変する制御回路とを設けた
ので、ボロメータブリッジを構成するサーミスタに対す
る測定時の雰囲気温度の影響を低減し、対象物の温度測
定の精度を高めることができるという効果がある。
According to the second aspect of the present invention, since the resistance portion whose resistance value can be changed and the control circuit which changes the resistance value of the resistance portion according to the detection output of the resistance voltage detection circuit are provided, the bolometer is provided. There is an effect that the influence of the ambient temperature at the time of measurement on the thermistor forming the bridge can be reduced and the accuracy of temperature measurement of the object can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】実施例1を示す回路図である。FIG. 1 is a circuit diagram showing a first embodiment.

【図2】実施例2を示す回路図である。FIG. 2 is a circuit diagram showing a second embodiment.

【図3】同上の要部を示す回路図である。FIG. 3 is a circuit diagram showing a main part of the same.

【図4】従来例を示す回路図である。FIG. 4 is a circuit diagram showing a conventional example.

【図5】同上の他の例を示す回路図である。FIG. 5 is a circuit diagram showing another example of the above.

【符号の説明】[Explanation of symbols]

1 ボロメータブリッジ 2 直流電源 3 ブリッジ間電圧検出回路 4 抵抗両端電圧検出回路 Th1 〜Th4 サーミスタ Ra 抵抗1 bolometer bridge 2 DC power supply 3 voltage detection circuit between bridges 4 voltage detection circuit between resistors Th 1 to Th 4 thermistor Ra resistance

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 サーミスタを用いたボロメータブリッジ
により入射赤外線量を検出する赤外線検出装置であっ
て、ボロメータブリッジと抵抗部の直列回路を直流電源
の両端に接続し、ボロメータブリッジのブリッジ間電圧
を検出するブリッジ間電圧検出回路と、抵抗部の両端電
圧を検出する抵抗両端電圧検出回路とを設けて成ること
を特徴とする赤外線検出装置。
1. An infrared detection device for detecting an incident infrared ray amount by a bolometer bridge using a thermistor, wherein a series circuit of a bolometer bridge and a resistor section is connected to both ends of a DC power source to detect a voltage between bridges of the bolometer bridge. An infrared detecting device, comprising: a voltage detecting circuit between bridges, and a voltage detecting circuit across a resistor for detecting a voltage across a resistor portion.
【請求項2】 抵抗値を可変できる上記抵抗部と、上記
抵抗両端電圧検出回路の検出出力に応じて上記抵抗部の
抵抗値を可変する制御回路とを設けて成ることを特徴と
する請求項1記載の赤外線検出装置。
2. The resistance unit, wherein the resistance value can be varied, and a control circuit for varying the resistance value of the resistance unit according to the detection output of the voltage across the resistance detection circuit. 1. The infrared detection device according to 1.
JP12853895A 1995-05-26 1995-05-26 Infrared detecting device Withdrawn JPH08320257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12853895A JPH08320257A (en) 1995-05-26 1995-05-26 Infrared detecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12853895A JPH08320257A (en) 1995-05-26 1995-05-26 Infrared detecting device

Publications (1)

Publication Number Publication Date
JPH08320257A true JPH08320257A (en) 1996-12-03

Family

ID=14987238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12853895A Withdrawn JPH08320257A (en) 1995-05-26 1995-05-26 Infrared detecting device

Country Status (1)

Country Link
JP (1) JPH08320257A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2348488A (en) * 1999-03-27 2000-10-04 Lg Electronics Inc Resistive bolometer sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2348488A (en) * 1999-03-27 2000-10-04 Lg Electronics Inc Resistive bolometer sensor
GB2348488B (en) * 1999-03-27 2001-05-16 Lg Electronics Inc Resistive Bolometer sensor

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