JPH0831594A - Plasma treating device - Google Patents
Plasma treating deviceInfo
- Publication number
- JPH0831594A JPH0831594A JP6164969A JP16496994A JPH0831594A JP H0831594 A JPH0831594 A JP H0831594A JP 6164969 A JP6164969 A JP 6164969A JP 16496994 A JP16496994 A JP 16496994A JP H0831594 A JPH0831594 A JP H0831594A
- Authority
- JP
- Japan
- Prior art keywords
- resistant plate
- length
- heat
- plasma processing
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はプラズマ処理装置に関
し、より詳細にはマイクロ波を使用することにより発生
するプラズマを利用した半導体デバイス形成用のエッチ
ング装置、アッシング装置又はＣＶＤ装置として用いら
れるプラズマ処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing used as an etching apparatus, an ashing apparatus or a CVD apparatus for forming a semiconductor device using plasma generated by using microwaves. Regarding the device.
【０００２】[0002]
【従来の技術】真空近くに減圧した容器内に反応ガスと
マイクロ波を導入し、ガス放電を起こさせてプラズマを
生成させ、このプラズマを基板表面に導いてエッチング
やレジスト除去（アッシング）、ＣＶＤ（Chemical Vap
or Deposition)等の処理を行なわせるプラズマ処理装置
は、高集積半導体素子等の製造において欠くことができ
ないものとなってきている。例えば、特開昭６２−５６
００号公報や特開昭６２−９９４８１号公報にも、レジ
スト除去装置としてこのようなプラズマ処理装置が記載
されている。2. Description of the Related Art A reaction gas and a microwave are introduced into a container whose pressure is reduced to near vacuum, a gas discharge is caused to generate plasma, and the plasma is guided to the substrate surface to perform etching, resist removal (ashing), and CVD. (Chemical Vap
A plasma processing apparatus for performing processing such as (or Deposition) has become indispensable in manufacturing highly integrated semiconductor elements and the like. For example, JP-A-62-56
Japanese Patent Laid-Open No. 00 and Japanese Patent Laid-Open No. 62-99481 also describe such a plasma processing apparatus as a resist removing apparatus.
【０００３】図５は従来のこの種のプラズマ処理装置の
一例を模式的に示した断面図であり、図中、１１は中空
直方体形状の金属製容器を示している。この金属製容器
１１はステンレス等の金属により形成され、その周囲壁
は二重構造となっており、その内部は冷却水流通室１８
となっている。そして、装置の作動中はこの冷却水流通
室１８に冷却水が流通して金属製容器１１の周囲が冷却
される。FIG. 5 is a sectional view schematically showing an example of a conventional plasma processing apparatus of this type. In FIG. 5, reference numeral 11 denotes a hollow rectangular metal container. The metal container 11 is made of a metal such as stainless steel, and the surrounding wall has a double structure.
Has become. Then, during the operation of the apparatus, the cooling water flows through the cooling water flow chamber 18 to cool the periphery of the metal container 11.
【０００４】また金属製容器１１の上部はプラズマ生成
室２０となっており、プラズマ生成室２０の上部はマイ
クロ波の透過性及び耐熱性を有する石英ガラス、パイレ
ックスガラス、アルミナセラミックス等の誘電体板を用
いて形成された耐熱性板３２が配設され、この耐熱性板
３２により金属製容器１１の内部が冷却水流通室１８の
上部壁１８ａに配置されたＯリング（図示せず）を介し
て気密状態に封止されている。従って、耐熱性板３２の
一辺の大きさはプラズマ生成室２０が耐熱性板３２と接
する面の一辺の長さより長く、この１辺の約１．５倍程
度である。プラズマ生成室２０の下方にはメッシュ構造
の仕切り板１７を介して反応室２１が形成されており、
反応室２１内には耐熱性板３２と対向する箇所に試料Ｓ
を載置するための試料台２３が配設されている。また反
応室２１の下部壁には図示しない排気装置に接続された
排気口１４が形成されており、プラズマ生成室２０の一
側壁には金属製容器１１内に所要の反応ガスを供給する
ためのガス供給管１３が接続されている。The upper part of the metal container 11 is a plasma generation chamber 20, and the upper part of the plasma generation chamber 20 is a dielectric plate made of quartz glass, Pyrex glass, alumina ceramics or the like having microwave transmission and heat resistance. A heat-resistant plate 32 formed by using the heat-resistant plate 32 is provided, and the heat-resistant plate 32 causes the inside of the metal container 11 to pass through an O-ring (not shown) arranged on the upper wall 18a of the cooling water flow chamber 18. And is hermetically sealed. Therefore, the size of one side of the heat resistant plate 32 is longer than the length of one side of the surface where the plasma generation chamber 20 contacts the heat resistant plate 32, and is about 1.5 times this side. A reaction chamber 21 is formed below the plasma generation chamber 20 via a partition plate 17 having a mesh structure,
The sample S is placed in the reaction chamber 21 at a position facing the heat resistant plate 32.
Is provided with a sample table 23 for mounting. An exhaust port 14 connected to an exhaust device (not shown) is formed in the lower wall of the reaction chamber 21, and one side wall of the plasma generation chamber 20 is provided for supplying a required reaction gas into the metal container 11. The gas supply pipe 13 is connected.
【０００５】一方、金属製容器１１の上方には誘電体線
路１２が配設されており、誘電体線路１２の上部にはア
ルミニウム（Ａｌ）等を用いて形成された金属板１２ａ
が配設され、金属板１２ａ下面には誘電体層１２ｂがボ
ルト等で固定されている。この誘電体層１２ｂは誘電損
失の小さいフッ素樹脂、ポリエチレンあるいはポリスチ
レン等を用いて形成されている。誘電体線路１２には導
波管１５を介してマイクロ波発振器１６が連結されてお
り、マイクロ波発振器１６からのマイクロ波が導波管１
５を介して誘電体線路１２に導入されるようになってい
る。On the other hand, a dielectric line 12 is arranged above the metal container 11, and a metal plate 12a made of aluminum (Al) or the like is provided above the dielectric line 12.
And the dielectric layer 12b is fixed to the lower surface of the metal plate 12a with bolts or the like. The dielectric layer 12b is made of fluororesin, polyethylene, polystyrene or the like, which has a small dielectric loss. A microwave oscillator 16 is connected to the dielectric line 12 via a waveguide 15, and the microwave from the microwave oscillator 16 is coupled to the waveguide 1.
It is adapted to be introduced into the dielectric line 12 through the line 5.
【０００６】このように構成されたプラズマ処理装置を
用い、例えば試料台２３上に載置された半導体基板等の
試料Ｓ表面にアッシング処理やエッチング処理等を施す
場合、まず排気口１４から排気を行なって金属製容器１
１内を所要の真空度に設定した後、ガス供給管１３から
プラズマ生成室２０内にＣｌ2 、ＨＢｒ、Ｏ2 等の反応
ガスを供給する。また装置の作動中は、冷却水を冷却水
流通室１８に流して金属製容器１１周辺を冷却する。次
いで、マイクロ波発振器１６を作動させてマイクロ波を
発振させ、このマイクロ波を導波管１５を介して誘電体
線路１２に導入する。これにより誘電体線路１２下方に
電界が形成され、形成された電界が耐熱性板３２を通過
してプラズマ生成室２０内に導入される。一方、ガス供
給管１３から供給されたガスは、プラズマ生成室２０内
に導入され、マイクロ波の照射によりプラズマ化され
る。このプラズマのうち電気的に中性のラジカルが主に
メッシュ状の仕切り板１７を透過して反応室２１内に広
がり、試料台２３に載置された試料Ｓ表面に到達してア
ッシング処理やエッチング処理等が行なわれる。When the surface of the sample S such as a semiconductor substrate mounted on the sample table 23 is subjected to an ashing process or an etching process using the plasma processing apparatus having the above-described structure, first, exhaust gas is exhausted from the exhaust port 14. Going metal container 1
After the inside of 1 is set to a required degree of vacuum, reaction gases such as Cl 2 , HBr, and O 2 are supplied from the gas supply pipe 13 into the plasma generation chamber 20. Further, during the operation of the apparatus, cooling water is caused to flow into the cooling water flow chamber 18 to cool the periphery of the metal container 11. Then, the microwave oscillator 16 is operated to oscillate the microwave, and this microwave is introduced into the dielectric line 12 via the waveguide 15. As a result, an electric field is formed below the dielectric line 12, and the formed electric field passes through the heat resistant plate 32 and is introduced into the plasma generation chamber 20. On the other hand, the gas supplied from the gas supply pipe 13 is introduced into the plasma generation chamber 20 and turned into plasma by irradiation with microwaves. Of the plasma, electrically neutral radicals mainly permeate through the mesh-shaped partition plate 17 and spread into the reaction chamber 21, reach the surface of the sample S mounted on the sample table 23, and reach ashing processing or etching. Processing etc. are performed.
【０００７】[0007]
【発明が解決しようとする課題】このようなプラズマ処
理装置においては、最近、アッシング処理やエッチング
処理等（以下、プラズマ処理ともいう）を施す対象とな
る半導体基板の大型化に伴い、金属製容器１１内のプラ
ズマ生成室２０、及び反応室２１も大きくなってきてお
り、それにつれて耐熱性板３２の面積も大きくなってき
ている。In such a plasma processing apparatus, a metal container has recently become larger as a semiconductor substrate to be subjected to ashing processing, etching processing and the like (hereinafter, also referred to as plasma processing) becomes larger. The plasma generation chamber 20 and the reaction chamber 21 in 11 are also increasing in size, and the area of the heat resistant plate 32 is also increasing accordingly.
【０００８】このように耐熱性板３２の面積が大きくな
るに従い、大きな耐熱性板３２を製造するのが難しいと
いう製作上の問題の他、半導体基板等の試料Ｓにプラズ
マ処理を施す際に、プラズマ処理速度が思うように上が
らず、また試料Ｓに対するプラズマ処理の面内均一性が
劣化するという課題が生じてきた。As described above, as the area of the heat-resistant plate 32 increases, it is difficult to manufacture a large heat-resistant plate 32. In addition, when the sample S such as a semiconductor substrate is subjected to plasma treatment, There has been a problem that the plasma processing rate does not increase as expected and the in-plane uniformity of the plasma processing on the sample S deteriorates.
【０００９】またプラズマ生成室２０自体の大きさが大
きくなったため、半導体基板等の試料Ｓにプラズマ処理
を施す際に、時間が経過するにつれて試料Ｓの場所によ
りプラズマ処理の程度が不均一になったり、プラズマ処
理速度が変化する、いわゆるプロセス性能の時間的な変
化の発生という課題が生じてきた。Further, since the size of the plasma generation chamber 20 itself is increased, when the sample S such as the semiconductor substrate is subjected to the plasma processing, the degree of the plasma processing becomes uneven depending on the location of the sample S as time elapses. However, there has been a problem that the plasma processing rate changes, that is, the so-called process performance changes with time.
【００１０】本発明はこのような課題に鑑みなされたも
のであり、効率よくプラズマ処理を行うことができると
ともに、均一的なプラズマ処理性能に優れ、さらにはプ
ロセス性能の時間的な変化を生じることのないプラズマ
処理装置を提供することを目的としている。The present invention has been made in view of the above problems, and is capable of efficiently performing plasma processing, excellent in uniform plasma processing performance, and causing temporal change in process performance. It is an object of the present invention to provide a plasma processing apparatus that does not have the above.
【００１１】[0011]
【課題を解決するための手段】上記目的を達成するため
に本発明に係るプラズマ処理装置は、マイクロ波導波路
を形成すべく配置された誘電体層と、該誘電体層に対向
配置され、マイクロ波を透過する耐熱性板で気密に封止
された金属製容器とを備え、該金属製容器内に試料を載
置する試料台が配設されたプラズマ処理装置において、
前記耐熱性板の短辺の長さが試料の直径の０．８倍より
大きく、かつ前記金属製容器内部の耐熱性板が配設され
た面の短辺の長さの１．３倍より小さいことを特徴とし
ている（１）。In order to achieve the above object, a plasma processing apparatus according to the present invention comprises a dielectric layer arranged to form a microwave waveguide, and a dielectric layer arranged to face the dielectric layer. In a plasma processing apparatus comprising a metal container hermetically sealed with a heat-resistant plate that transmits waves, and a sample table for mounting a sample in the metal container is provided.
The length of the short side of the heat resistant plate is greater than 0.8 times the diameter of the sample, and 1.3 times the length of the short side of the surface of the metal container on which the heat resistant plate is disposed. It is characterized by being small (1).
【００１２】また、本発明に係るプラズマ処理装置は、
マイクロ波導波路を形成すべく配置された誘電体層と、
該誘電体層に対向配置され、マイクロ波を透過する耐熱
性板で気密に封止された金属製容器とを備え、該金属製
容器内に試料を載置する試料台が配設されたプラズマ処
理装置において、前記耐熱性板の短辺の長さが試料の直
径の０．８倍より大きく、かつ１．２倍より小さいこと
を特徴としている（２）。Further, the plasma processing apparatus according to the present invention is
A dielectric layer arranged to form a microwave waveguide,
Plasma provided with a metal container which is arranged facing the dielectric layer and hermetically sealed with a heat-resistant plate that transmits microwaves, and a sample table for mounting a sample in the metal container is arranged. In the processing apparatus, the length of the short side of the heat resistant plate is larger than 0.8 times and smaller than 1.2 times the diameter of the sample (2).
【００１３】[0013]
【作用】本発明者らが、半導体基板等にプラズマ処理を
施す際のプラズマ処理速度について検討したところ、耐
熱性板がプラズマ生成室より不必要に大きな面積（体
積）を有していると、誘電体線路より放射されたマイク
ロ波が耐熱性板を通過する際に誘電損失により消費さ
れ、プラズマ処理能力が小さくなることがわかった。従
って、このような誘電損失を減少させるためには、耐熱
性板の面積（体積）を減少させればよいが、耐熱性板を
プラズマ生成室に比べて余りにも小さくすると、マイク
ロ波が耐熱性板を通過してプラズマ生成室に導入される
際に急に広げら、試料の場所によりプラズマ処理速度が
異なるようになり、いわゆる面内均一性が悪化する。こ
のようなマイクロ波の作用を考慮して検討した結果、耐
熱性板の短辺の長さを試料の直径の０．８倍より大き
く、かつプラズマ生成室の耐熱性板が配設された面の短
辺の長さの１．３倍より小さい範囲の長さにするのが好
ましいことがわかった。なお、試料の直径は、通常プラ
ズマ生成室の短辺の長さの０．４〜０．７倍程度であ
る。The present inventors have examined the plasma processing rate when performing plasma processing on a semiconductor substrate, etc., and find that the heat-resistant plate has an area (volume) unnecessarily larger than that of the plasma generation chamber. It was found that the microwave radiated from the dielectric line was consumed by the dielectric loss when passing through the heat-resistant plate, and the plasma processing capacity was reduced. Therefore, in order to reduce such dielectric loss, it is sufficient to reduce the area (volume) of the heat-resistant plate, but if the heat-resistant plate is made too small compared to the plasma generation chamber, the microwave heat resistance is reduced. If it is suddenly expanded when passing through the plate and introduced into the plasma generation chamber, the plasma processing rate becomes different depending on the location of the sample, and so-called in-plane uniformity deteriorates. As a result of studying in consideration of the action of such microwaves, the length of the short side of the heat resistant plate is larger than 0.8 times the diameter of the sample, and the surface on which the heat resistant plate of the plasma generation chamber is arranged. It has been found that it is preferable to set the length to a range smaller than 1.3 times the length of the short side of the. The diameter of the sample is usually about 0.4 to 0.7 times the length of the short side of the plasma generation chamber.
【００１４】すなわち本発明に係るプラズマ処理装置
（１）によれば、前記耐熱性板の短辺の長さが試料の直
径の０．８倍より大きく、かつ前記金属製容器内部の耐
熱性板が配設された面の短辺の長さの１．３倍より小さ
いので、耐熱性板に起因する不要な誘電損失が減少し、
試料に対するプラズマ処理速度が大きくなるとともに、
プラズマ処理の際の試料の面内均一性が維持される。That is, according to the plasma processing apparatus (1) of the present invention, the length of the short side of the heat resistant plate is larger than 0.8 times the diameter of the sample, and the heat resistant plate inside the metal container is used. Since it is less than 1.3 times the length of the short side of the surface on which is arranged, unnecessary dielectric loss due to the heat resistant plate is reduced,
As the plasma processing speed for the sample increases,
The in-plane uniformity of the sample during plasma processing is maintained.
【００１５】また、上記のように耐熱性板の大きさを調
整した場合においても、プラズマ生成室が大きくなると
プロセス性能に時間的な変化が生じる場合があり、この
原因が試料の直径に対して耐熱性板が大きすぎるためで
あることがわかった。そこで、耐熱性板の大きさについ
て検討した結果、時間的経過を伴うプロセス性能の安定
化を図るためには、その長さを試料の直径の０．８倍よ
り大きく１．２倍より小さい範囲にすればよいことがわ
かった。Even when the size of the heat resistant plate is adjusted as described above, the process performance may change with time when the size of the plasma generating chamber becomes large, and this is due to the diameter of the sample. It was found that this was because the heat resistant plate was too large. Therefore, as a result of studying the size of the heat-resistant plate, in order to stabilize the process performance with the passage of time, the length of the heat-resistant plate should be in a range of more than 0.8 times and less than 1.2 times the diameter of the sample. I found that I should do it.
【００１６】すなわち本発明に係るプラズマ処理装置
（２）によれば、前記耐熱性板の短辺の長さが試料の直
径の０．８倍より大きく、かつ１．２倍より小さいの
で、上記装置（１）について記載した効果の他、プロセ
ス性能の時間的変化がより小さくなり、プロセス性能が
安定化する。That is, according to the plasma processing apparatus (2) of the present invention, since the length of the short side of the heat resistant plate is larger than 0.8 times and smaller than 1.2 times the diameter of the sample, In addition to the effects described for the device (1), the temporal change of the process performance becomes smaller and the process performance is stabilized.
【００１７】なお、上記（１）又は（２）記載のプラズ
マ処理装置においては、金属製容器の内部形状が直方体
形状である場合を前提とした表現となっているが、前記
金属製容器の内部形状は直方体形状に限定されるもので
はなく、円柱形状でもよく、同様に耐熱性板も円板状の
ものでもよく、試料Ｓも矩形のものであってもよい。そ
してこのような場合においては、金属製容器内部の耐熱
性板が配設された面の短辺の長さに代わってその直径
を、前記耐熱性板の短辺の長さに代わってその直径を、
試料の直径に代わってその短辺の長さを、それぞれ用い
ればよい。In the plasma processing apparatus described in (1) or (2) above, the expression is based on the assumption that the internal shape of the metal container is a rectangular parallelepiped shape. The shape is not limited to the rectangular parallelepiped shape, and may be a columnar shape, similarly the heat-resistant plate may be a disk-shaped one, and the sample S may be a rectangular one. And in such a case, the diameter of the heat-resistant plate inside the metal container instead of the length of the short side of the surface, the diameter of the heat-resistant plate instead of the length of the short side of the surface. To
The length of the short side may be used instead of the diameter of the sample.
【００１８】[0018]
【実施例及び比較例】以下、本発明に係るプラズマ処理
装置の実施例を図面に基づいて説明する。EXAMPLES AND COMPARATIVE EXAMPLES Examples of the plasma processing apparatus according to the present invention will be described below with reference to the drawings.
【００１９】図１は実施例に係るプラズマ処理装置を模
式的に示した断面図である。図１に示したプラズマ処理
装置においては、プラズマ生成室２０の上部の構造及び
耐熱性板２２の大きさ以外は、図５に示した従来のプラ
ズマ処理装置と同様に構成されているので、ここでは他
の部分の詳しい説明は省略する。FIG. 1 is a sectional view schematically showing a plasma processing apparatus according to an embodiment. The plasma processing apparatus shown in FIG. 1 has the same configuration as the conventional plasma processing apparatus shown in FIG. 5, except for the structure of the upper part of the plasma generation chamber 20 and the size of the heat-resistant plate 22, so that here Then, detailed description of other parts is omitted.
【００２０】実施例に係るプラズマ処理装置の金属製容
器１１の上部はプラズマ生成室２０となっており、プラ
ズマ生成室２０の上部に、一部に貫通孔２０ｂを有する
上部壁２０ａが形成されている。そして、耐熱性板２２
がＯリング（図示せず）を介して上部壁２０ａ上に気密
状態を保って配設されている。なお、本実施例に係るプ
ラズマ処理装置においては、プラズマ生成室２０に上部
壁２０ａが形成されているが、プラズマ生成室２０上部
の耐熱性板２２が配設された面より耐熱性板２２の方が
大きい場合は、従来と同様に耐熱性板２２を冷却水流通
室１８の上部壁１８ａ上にＯリングを介して配設しても
よい。The upper part of the metal container 11 of the plasma processing apparatus according to the embodiment is a plasma generating chamber 20, and an upper wall 20a having a through hole 20b is formed in the upper part of the plasma generating chamber 20. There is. And the heat resistant plate 22
Is provided on the upper wall 20a via an O-ring (not shown) in an airtight manner. Although the upper wall 20a is formed in the plasma generation chamber 20 in the plasma processing apparatus according to the present embodiment, the heat-resistant plate 22 is formed above the surface of the plasma generation chamber 20 where the heat-resistant plate 22 is disposed. If it is larger, the heat-resistant plate 22 may be arranged on the upper wall 18a of the cooling water flow chamber 18 via an O-ring as in the conventional case.
【００２１】次に、耐熱性板２２として、正方形形状の
主面の一辺の長さが１２０ｍｍ、１６０ｍｍ、２００ｍ
ｍ、２４０ｍｍ、２８０ｍｍ、３４０ｍｍ、４００ｍｍ
で、その厚さが２０ｍｍの大きさが異なるアルミナ製の
耐熱性板２２をそれぞれ作製してプラズマ生成室２０の
上部に配設し、これら耐熱性板２２が配設されたそれぞ
れのプラズマ処理装置において、以下に説明するプラズ
マ処理を行った。なお、プラズマ生成室２０の耐熱性板
２２が配設された面は、２６０ｍｍ×２６０ｍｍの大き
さを有しており、誘電体線路１２の誘電体層１２ｂの形
成には、厚さ２０ｍｍ、長さ５００ｍｍ、幅３００ｍｍ
のフッ素樹脂を用いた。Next, as the heat resistant plate 22, the length of one side of the square-shaped main surface is 120 mm, 160 mm, and 200 m.
m, 240 mm, 280 mm, 340 mm, 400 mm
Then, heat-resistant plates 22 made of alumina having different thicknesses of 20 mm are prepared and arranged on the upper part of the plasma generation chamber 20, and the respective plasma processing apparatuses on which the heat-resistant plates 22 are arranged are arranged. In, the plasma treatment described below was performed. The surface of the plasma generation chamber 20 on which the heat-resistant plate 22 is arranged has a size of 260 mm × 260 mm, and the dielectric layer 12 b of the dielectric line 12 is formed with a thickness of 20 mm and a long length. 500 mm in width and 300 mm in width
The fluororesin of was used.
【００２２】上記したプラズマ処理装置を使用して、ま
ず、試料Ｓとして８インチ（約２００ｍｍ）のＳｉウエ
ハの表面にフォトレジスト層が３μｍの厚さで形成され
たものを用い、試料台２３上に試料Ｓを載置した後、排
気口１４から排気を行なって金属製容器１１内を２Ｔｏ
ｒｒに設定した。その後、ガス供給管１３からプラズマ
生成室２０内に、Ｏ2 を９５ｖｏｌ％及びＮ2 を５ｖｏ
ｌ％含有する混合ガスを、ガス流量１ｓｌｍで供給し
た。次に、マイクロ波パワーを１．５ｋＷに設定してマ
イクロ波を反応室２１内に導入し、前記Ｓｉウエハの表
面に形成されたフォトレジストのアッシング処理を３分
間行った。Using the plasma processing apparatus described above, first, as the sample S, an 8-inch (about 200 mm) Si wafer having a photoresist layer formed on the surface with a thickness of 3 μm was used. After the sample S is placed on the metal container 11, the gas is exhausted from the exhaust port 14 to move the inside of the metal container 11 to 2To.
set to rr. Then, 95 vol% of O 2 and 5 vo of N 2 were introduced into the plasma generation chamber 20 from the gas supply pipe 13.
A mixed gas containing 1% was supplied at a gas flow rate of 1 slm. Next, the microwave power was set to 1.5 kW, microwaves were introduced into the reaction chamber 21, and the photoresist formed on the surface of the Si wafer was ashed for 3 minutes.
【００２３】各プラズマ処理装置において、このような
アッシング処理を３枚のＳｉウエハについて同じ条件で
行い、アッシング速度及びアッシング処理の面内均一性
を測定した。アッシング処理の面内均一性については、
フォトレジストのアッシング深さをＳｉウエハの複数の
場所（１７箇所）において測定し、平均のアッシング深
さに対して最もアッシング深さが大きいもの、又は最も
アッシング深さが小さいものを面内均一性（バラツキ）
の値として用いた。In each plasma processing apparatus, such an ashing process was performed on three Si wafers under the same conditions, and the ashing speed and the in-plane uniformity of the ashing process were measured. For in-plane uniformity of the ashing process,
The ashing depth of the photoresist is measured at a plurality of places (17 places) on the Si wafer, and the one having the largest ashing depth or the smallest ashing depth with respect to the average ashing depth is in-plane uniformity. (Variation)
Was used as the value of.
【００２４】図２は、前記実施例の結果を示したもの
で、耐熱性板の一辺の長さと、前記Ｓｉウエハ上のフォ
トレジストのアッシング速度又は面内均一性との関係を
示したグラフである。FIG. 2 is a graph showing the result of the above-mentioned embodiment, which is a graph showing the relationship between the length of one side of the heat-resistant plate and the ashing rate or in-plane uniformity of the photoresist on the Si wafer. is there.
【００２５】図２より明らかなように、耐熱性板２２の
一辺の長さが１６０ｍｍより長く、３４０ｍｍよりも短
い範囲で、フォトレジストのアッシング速度が１４００
ｎｍ／ｍｉｎと大きく、しかもアッシングの際の面内均
一性が７％以内とバラツキが非常に小さくなっている。
この耐熱性板２２の長さをＳｉウエハの直径と比べる
と、０．８倍〜１．７倍の範囲となり、プラズマ生成室
２０の耐熱性板２２が配設される面の一辺（２６０ｍ
ｍ）と比べると、０．６２倍〜１．３１倍の範囲とな
る。As is apparent from FIG. 2, when the length of one side of the heat resistant plate 22 is longer than 160 mm and shorter than 340 mm, the photoresist ashing speed is 1400.
nm / min, and the in-plane uniformity during ashing is 7% or less, which is a very small variation.
Compared with the diameter of the Si wafer, the length of the heat resistant plate 22 is in the range of 0.8 times to 1.7 times, which is one side (260 m) of the surface of the plasma generation chamber 20 on which the heat resistant plate 22 is disposed.
Compared with m), the range is 0.62 times to 1.31 times.
【００２６】次に、前記した装置と同様に大きさの異な
る耐熱性板２２が配設されたプラズマ処理装置を用い、
圧力を１Ｔｏｒｒとした他は同様の条件で、５分間づ
つ、繰り返してアッシング処理を行い、累積時間の経過
によるアッシング速度の変化及び面内均一性の変化を測
定した。Next, using a plasma processing apparatus in which heat-resistant plates 22 having different sizes are arranged as in the above-mentioned apparatus,
Under the same conditions except that the pressure was set to 1 Torr, ashing treatment was repeatedly performed for 5 minutes, and changes in the ashing rate and changes in the in-plane uniformity with the passage of cumulative time were measured.
【００２７】図３及び図４はその結果を示したグラフで
あり、図３はアッシング処理の累積時間とアッシング速
度との関係を示しており、図４はアッシング処理の累積
時間とアッシング処理の際のＳｉウエハの面内均一性を
示している。また、図３及び図４においてグラフに記載
された数値は、使用された耐熱性板２２の一辺の長さを
示したものである。3 and 4 are graphs showing the results. FIG. 3 shows the relationship between the cumulative time of the ashing process and the ashing speed, and FIG. 4 shows the cumulative time of the ashing process and the ashing process. 2 shows the in-plane uniformity of the Si wafer. The numerical values shown in the graphs of FIGS. 3 and 4 indicate the length of one side of the heat resistant plate 22 used.
【００２８】図３より明らかなように、耐熱性板２２の
一辺の長さが１２０ｍｍ〜２４０ｍｍの範囲では、アッ
シング処理の累積時間が２００分にまで及んだ場合であ
っても、フォトレジストのアッシング処理速度が減少せ
ず、ほぼ一定の大きなアッシング速度が維持されてい
る。また、図４より明らかなように、耐熱性板２２の一
辺の長さが１６０ｍｍ〜２４０ｍｍの範囲では、アッシ
ング処理の累積時間が２００分にまで及んだ場合であっ
ても、アッシング処理の面内均一性は１０％以内と高い
均一性を維持している。As is apparent from FIG. 3, when the length of one side of the heat resistant plate 22 is in the range of 120 mm to 240 mm, even if the cumulative time of the ashing process reaches 200 minutes, the photoresist The ashing processing speed does not decrease, and a substantially constant large ashing speed is maintained. Further, as is clear from FIG. 4, when the length of one side of the heat resistant plate 22 is in the range of 160 mm to 240 mm, even if the cumulative time of the ashing process reaches 200 minutes, the surface of the ashing process is The inner uniformity maintains a high uniformity of 10% or less.
【００２９】以上の結果より、図３及び図４に示した両
方の結果を考慮すると、アッシング処理を行う際の時間
経過に伴うプロセス性能の変化が少ない耐熱性板２２の
一辺の長さの適切な範囲は、１６０〜２４０ｍｍとな
る。前記範囲を、Ｓｉウエハの直径と比較すると、Ｓｉ
ウエハに対して０．８倍〜１．２倍の範囲となる。From the above results, considering both the results shown in FIG. 3 and FIG. 4, the length of one side of the heat-resistant plate 22 which is less likely to change the process performance with the passage of time during the ashing process is appropriate. The range is 160 to 240 mm. Comparing the above range with the diameter of the Si wafer,
The range is 0.8 times to 1.2 times that of the wafer.
【００３０】[0030]
【発明の効果】以上詳述したように本発明に係るプラズ
マ処理装置（１）にあっては、マイクロ波導波路を形成
すべく配置された誘電体層と、該誘電体層に対向配置さ
れ、マイクロ波を透過する耐熱性板で気密に封止された
金属製容器とを備え、該金属製容器内に試料を載置する
試料台が配設されたプラズマ処理装置において、前記耐
熱性板の短辺の長さが試料の直径の０．８倍より大き
く、かつ前記金属製容器内部の耐熱性板が配設された面
の短辺の長さの１．３倍より小さいので、耐熱性板によ
る不要な誘電損失を減少させることができ、試料に対す
るプラズマ処理速度を大きく保つことができるととも
に、プラズマ処理の際の試料の面内均一性を維持するこ
とができる。As described in detail above, in the plasma processing apparatus (1) according to the present invention, a dielectric layer arranged to form a microwave waveguide, and a dielectric layer opposed to the dielectric layer, A plasma processing apparatus comprising: a metal container hermetically sealed with a heat-resistant plate that transmits microwaves; and a sample stage for mounting a sample in the metal container. Since the length of the short side is greater than 0.8 times the diameter of the sample and less than 1.3 times the length of the short side of the surface of the metal container on which the heat resistant plate is disposed, heat resistance Unnecessary dielectric loss due to the plate can be reduced, the plasma processing rate for the sample can be kept large, and in-plane uniformity of the sample during plasma processing can be maintained.
【００３１】また本発明に係るプラズマ処理装置（２）
にあっては、マイクロ波導波路を形成すべく配置された
誘電体層と、該誘電体層に対向配置され、マイクロ波を
透過する耐熱性板で気密に封止された金属製容器とを備
え、該金属製容器内に試料を載置する試料台が配設され
たプラズマ処理装置において、前記耐熱性板の短辺の長
さが試料の直径の０．８倍より大きく、かつ１．２倍よ
り小さいので、上記装置（１）に記載した効果の他、プ
ロセス性能の時間的変化をより小さくすることができ、
プロセス性能を安定化させることができる。A plasma processing apparatus (2) according to the present invention
In that case, it is provided with a dielectric layer arranged to form a microwave waveguide, and a metal container arranged to face the dielectric layer and hermetically sealed with a heat-resistant plate that transmits microwaves. In a plasma processing apparatus in which a sample table for placing a sample is placed in the metal container, the length of the short side of the heat resistant plate is larger than 0.8 times the diameter of the sample, and 1.2 Since it is less than double, in addition to the effect described in the above device (1), it is possible to further reduce the temporal change in process performance,
The process performance can be stabilized.
【図１】本発明の実施例に係るプラズマ処理装置を模式
的に示した断面図である。FIG. 1 is a sectional view schematically showing a plasma processing apparatus according to an embodiment of the present invention.
【図２】実施例及び比較例に係るプラズマ処理装置を用
いてその表面にフォトレジストが形成されたＳｉウエハ
のアッシング処理を行った際の、耐熱性板の一辺の長さ
と、アッシング速度及び面内均一性との関係を示したグ
ラフである。FIG. 2 shows the length of one side of a heat-resistant plate, the ashing speed, and the surface when an ashing process is performed on a Si wafer having a photoresist formed on the surface thereof using the plasma processing apparatus according to the example and the comparative example. It is a graph which showed the relation with inner uniformity.
【図３】実施例及び比較例に係るプラズマ処理装置を用
いてその表面にフォトレジストが形成されたＳｉウエハ
のアッシング処理を行った際の、アッシング処理の累積
時間とアッシング速度との関係を示したグラフである。FIG. 3 shows the relationship between the cumulative time of the ashing process and the ashing speed when the ashing process is performed on the Si wafer having the photoresist formed on the surface thereof using the plasma processing apparatus according to the example and the comparative example. It is a graph.
【図４】実施例及び比較例に係るプラズマ処理装置を用
いてその表面にフォトレジストが形成されたＳｉ基板の
アッシング処理を行った際の、アッシング処理の累積時
間と面内均一性との関係を示したグラフである。FIG. 4 shows the relationship between the cumulative time of ashing processing and the in-plane uniformity when performing ashing processing on a Si substrate having a photoresist formed on its surface using the plasma processing apparatus according to the example and the comparative example. It is a graph showing.
【図５】従来のプラズマ処理装置を模式的に示した断面
図である。FIG. 5 is a sectional view schematically showing a conventional plasma processing apparatus.
１１ 金属製容器 １２ 誘電体線路 １２ａ 金属板 １２ｂ 誘電体層 １６ マイクロ波発振器 ２０ プラズマ生成室 ２２ 耐熱性板 ２３ 試料台 11 Metal Container 12 Dielectric Line 12a Metal Plate 12b Dielectric Layer 16 Microwave Oscillator 20 Plasma Generation Chamber 22 Heat-Resistant Plate 23 Sample Stand
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/205 21/3065 (72)発明者 小町 恭一 大阪府大阪市中央区北浜４丁目５番33号 住友金属工業株式会社内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Reference number in the agency FI Technical indication location H01L 21/205 21/3065 (72) Inventor Kyoichi Komachi 4-5 Kitahama, Chuo-ku, Osaka-shi, Osaka No. 33 Sumitomo Metal Industries, Ltd.
Claims (2)
た誘電体層と、該誘電体層に対向配置され、マイクロ波
を透過する耐熱性板で気密に封止された金属製容器とを
備え、該金属製容器内に試料を載置する試料台が配設さ
れたプラズマ処理装置において、前記耐熱性板の短辺の
長さが試料の直径の０．８倍より大きく、かつ前記金属
製容器内部の耐熱性板が配設された面の短辺の長さの
１．３倍より小さいことを特徴とするプラズマ処理装
置。1. A dielectric layer arranged to form a microwave waveguide, and a metal container arranged to face the dielectric layer and hermetically sealed with a heat-resistant plate that transmits microwaves. In a plasma processing apparatus in which a sample table for mounting a sample in the metal container is arranged, the length of the short side of the heat resistant plate is larger than 0.8 times the diameter of the sample, and the metal plate is made of metal. A plasma processing apparatus characterized in that the length is shorter than 1.3 times the length of the short side of the surface of the container on which the heat resistant plate is disposed.
た誘電体層と、該誘電体層に対向配置され、マイクロ波
を透過する耐熱性板で気密に封止された金属製容器とを
備え、該金属製容器内に試料を載置する試料台が配設さ
れたプラズマ処理装置において、前記耐熱性板の短辺の
長さが試料の直径の０．８倍より大きく、かつ１．２倍
より小さいことを特徴とするプラズマ処理装置。2. A dielectric layer arranged to form a microwave waveguide, and a metal container arranged to face the dielectric layer and hermetically sealed with a heat-resistant plate that transmits microwaves. In a plasma processing apparatus in which a sample table for placing a sample is placed in the metal container, the length of the short side of the heat resistant plate is larger than 0.8 times the diameter of the sample, and 1.2 A plasma processing apparatus characterized by being smaller than double.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16496994A JP3502157B2 (en) | 1994-07-18 | 1994-07-18 | Plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16496994A JP3502157B2 (en) | 1994-07-18 | 1994-07-18 | Plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0831594A true JPH0831594A (en) | 1996-02-02 |
| JP3502157B2 JP3502157B2 (en) | 2004-03-02 |
Family
ID=15803323
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16496994A Expired - Fee Related JP3502157B2 (en) | 1994-07-18 | 1994-07-18 | Plasma processing equipment |
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| Country | Link |
|---|---|
| JP (1) | JP3502157B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008087843A1 (en) * | 2007-01-15 | 2008-07-24 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method and storage medium |
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|---|---|---|---|---|
| ATE468626T1 (en) | 2006-04-10 | 2010-06-15 | Hitachi Metals Ltd | BROADBAND ANTENNA WITH A U-SHAPED ANTENNA CONDUCTOR |
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1994
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008087843A1 (en) * | 2007-01-15 | 2008-07-24 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method and storage medium |
| JP2008172168A (en) * | 2007-01-15 | 2008-07-24 | Tokyo Electron Ltd | Plasma treatment apparatus, plasma treatment method, and storage medium |
| US8636871B2 (en) | 2007-01-15 | 2014-01-28 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method and storage medium |
| US9252001B2 (en) | 2007-01-15 | 2016-02-02 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method and storage medium |
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