JPH08306662A - Plasma device and plasma processing method using the device - Google Patents

Abstract

PURPOSE: To augment the silicon oxide selective ratio without deteriorating the etching rate of etched material by a method wherein the exposed surface of a high vacuum container of a device wall electrode insulated from the device wall of the high vacuum container but connected to an AC power supply is covered with a liner capable of feeding a specific chemical seed from a plasma. CONSTITUTION: A reactor 12 is made of a substrate stage 24 serving both as a bottom plate of the reactor 12 and a sidewall part 26 wherein an induction tube 25 of an etching gas is provided. This sidewall part 26 is composed of a grounding part 34 made of an anode aluminum oxide and a device 36 made of anode aluminum oxide arranged through the intermediary of a ceramic insulating plate 35 beneath this grounding part 34 as well as a liner 37 capable of feeding a specific chemical seed from a plasma coated on the exposed surface in the high vacuum container 2 of this device wall electrode 36. Furthermore, low-frequency AC voltage in the level not affecting to the plasma production is impressed from the device wall power supply 38 to the device wall electrode 36.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma device applied to, for example, the manufacture of a semiconductor device and a plasma processing method using the same, for example, anti-insulation in dry etching when forming a gate electrode from a silicon material film. The present invention relates to an apparatus and method for improving a membrane selection ratio.

[0002]

2. Description of the Related Art Recently, in a large number of so-called MOS (metal-oxide film-semiconductor three-layer structure) type transistors (hereinafter simply referred to as MOS type LSI) integrated with a large number of transistors, the gate electrode material is often used. Widely used are crystalline silicon and polycide (having a two-layer structure of polycrystalline silicon-silicide), and aluminum-based alloys as metal wiring materials.

In the above-mentioned MOS type LSI, it is necessary to form a large number of gate electrodes, metal wirings (aluminum electrodes), etc. as an extremely fine pattern, and a plasma etching apparatus is one of the most suitable processing apparatuses therefor. Particularly, a high-density plasma etching apparatus proposed in recent years excites a plasma by applying a high vacuum container containing a substrate having a material to be etched on its surface and an RF electric field, a microwave electric field or a magnetic field to the high vacuum container. It is configured to generate a high-density plasma having an ion density of 10 ¹¹ / cm ² or more even under a low pressure.

When using the above plasma etching apparatus, for example, when forming a gate electrode, a halogen-based gas is usually used as an etching gas, and a polycrystalline silicon film formed on a gate oxide film made of SiO ₂ is used. Form a mask such as polymer resist on the surface in a predetermined shape,
A desired gate electrode is formed by performing dry etching using halogen radicals or halogen ions generated by dissociation by high-density plasma. Thus, by using the above plasma etching device,
High speed and anisotropy can be achieved by a unique mechanism called ion assist.

Since the gate oxide film is as thin as 5 nm to 7 nm in the case of a memory capacity 256 MDRAM to which a design rule of the level of 0.25 μm is applied, the gate oxide film is extremely thin at the time of performing the dry etching. When forming an electrode, a selection ratio to the gate oxide film of about 100 or more is required. Further, in the case of forming an aluminum electrode made of an aluminum alloy, a Si interlayer insulating film doped with phosphorus (P) or boron (B) is used as a base of the aluminum material film in order to improve the planarization characteristics. However, since such an impurity-containing interlayer insulating film has a particularly high etching rate by halogen-based chemical species, a selection ratio to the insulating film of about 15 or more is required.

[0006]

However, when the dry etching is carried out, if the selection ratio to the gate oxide film or the selection ratio to the insulating film (hereinafter, simply referred to as "selection ratio") is increased, the resist mask under the resist mask is removed. The material to be etched tends to have a taper shape or a notching shape (constriction of the gate material or aluminum alloy at the interface with the gate oxide film or the insulating film), which causes an offset in the diffusion layer. Therefore, it is necessary to prevent the occurrence of these shape abnormalities as much as possible.

As a method for preventing the above-mentioned taper shape and notching shape from occurring, the following several methods have been devised. First, the prevention method when forming a gate electrode is shown below.

(1) Chlorine (Cl ₂ ) or hydrogen bromide (HBr) used as an etching gas is mixed with a gas for forming a polymer such as methane difluoride (CH ₂ F ₂ ) and used as a mixed gas. In this case, the generation of plasma causes the etching gas to react and dry etching to proceed, and the gas such as CH ₂ F ₂ is dissociated in the plasma to generate a carbon-based polymer, which is then etched. Is deposited on the side wall portion to form a side wall protective film. This side wall protective film can prevent side attack of reactive ions or active neutral particles on the gate material.

(2) The RF (high frequency) power applied from the plasma electrode to the silicon substrate is increased to increase the etching rate of the resist mask which is a mask. In this case, the generation of plasma increases the amount of decomposition products from the resist mask, and the decomposition products increase the film thickness of the sidewall protection film formed on the sidewalls of the gate material that is the material to be etched. This side wall protective film can prevent side attack of reactive ions or active neutral particles on the gate material.

(3) Increase the concentration of reactive ions and decrease the concentration of active neutral particles. This is possible by reducing the gas pressure. In this case, the mean free path of the reactive ions is increased, and it becomes possible to improve the anisotropy by aligning the directions in which the ions enter the silicon substrate.

However, each of the above methods has the following problems.

In the method (1), a carbon-based polymer film is deposited not only on the side wall of the gate material but also on the inner wall of the high vacuum chamber of the plasma apparatus due to the reaction of gas such as CH ₂ F _2. . Therefore, in addition to causing device failure due to particle contamination, it is necessary to frequently clean the inside of the high vacuum container, which poses a maintenance problem for the plasma apparatus.

In the method (2), by increasing the RF power of the substrate bias supplied from the plasma electrode to the silicon substrate, the dimensional conversion difference is likely to occur due to the receding of the resist mask. At the same time, the etching rate of the gate oxide film also increases, causing a large reduction in the selection ratio with respect to the gate film.

In the method (3), if the reaction pressure during dry etching can be maintained at a low pressure of the order of 10 ^-2 Pa, the production ratio of active neutral particles / reactive ions can be about 1/10. However, it is expected that the etch rate of the gate material will decrease due to the decrease in the absolute number of active species. In order to prevent this decrease in the etch rate, the RF bias power applied to the substrate must be increased, and the same problem as in the method (2) above occurs.

On the other hand, when forming the aluminum electrode,
There is a method of increasing the flow rate ratio of boron chloride (BCl ₃ ) as an etching gas to increase the contribution of the sputtering action by BCl _x ⁺ ions and increase the etching rate of the resist mask. In this case, the amount of decomposed products of the resist mask increases, the amount of deposition on the side wall of the aluminum electrode increases, and the side wall protection effect increases.

However, even in this method, not only the etching rate of the resist mask is increased but also the etching rate of the interlayer insulating film is increased, which causes a significant reduction in the selection ratio to the insulating film.

As described above, at present, it is extremely difficult to satisfy both of the contradictory requirements of improving the selection ratio of the gate oxide film / selectivity of the insulating film and good control of the etching shape. The selection ratio of the gate oxide film to the gate oxide film is about 40, and the selection ratio of the insulating film to the aluminum film is about 6 to 7. Selection ratio and 1
At present, it is difficult to realize a selection ratio to the insulating film of 5 or more.

The present invention has been made in view of the above-mentioned various problems, and an object of the present invention is to reduce the selection ratio of a silicon oxide film to a silicon oxide film without significantly decreasing the etching rate of the material to be etched. It is an object of the present invention to provide a plasma device and a plasma processing method using the same, which are capable of achieving a significant improvement.

[0019]

The object of the present invention is a plasma device for subjecting a substrate to a predetermined plasma treatment by using a high-density plasma generated in a high-vacuum container containing the substrate, and It is a plasma processing method using it.

In the plasma apparatus of the present invention, a vessel wall electrode insulated from the vessel wall of the high vacuum vessel and connected to an AC power source is arranged in the vicinity of the substrate, and the vessel wall electrode in the high vacuum vessel is provided. It is characterized in that the exposed surface is covered with a liner capable of supplying a predetermined chemical species by the plasma.

In this case, the plasma apparatus may be one in which a plasma generating coil is wound around the upper lid of a high vacuum container, and high frequency power is supplied to the plasma generating coil to generate plasma. In addition, it is preferable that a silicon compound such as high-purity quartz is used as the liner.

As a high frequency for plasma generation,
Usually, the frequency in the RF band such as 13.56 MHz is used, but it is preferable to use the frequency in the lower frequency band than the frequency of the AC power source connected to the wall electrode so as not to affect the plasma generation. The order of several hundreds of kHz is sufficient.

Further, in the plasma processing method of the present invention, the plasma apparatus controls the AC voltage applied to the chamber wall electrode independently of the plasma generation, so that the plasma interacts with the liner. According to the method, a predetermined plasma treatment is performed while supplying a predetermined deposition material onto the substrate.

Specifically, as the predetermined plasma processing,
Dry etching in which the liner is made of high-purity quartz and a predetermined material film on the substrate is etched using a halogen-based gas is suitable.

In this case, the predetermined material film on the substrate may be a silicon material film or an aluminum material film.

[0026]

In the present invention, high-density plasma is generated in the high-vacuum container, and a low-frequency AC voltage that does not affect plasma generation is applied to the wall electrode independently of plasma generation. An ion sheath is also formed on the exposed surface of the chamber wall electrode inside the high vacuum container, and the DC electric field can expect an ion sputtering action. In this case, since the exposed surface is covered with the liner, this is sputtered. Therefore,
It is possible to supply the chemical species from the liner onto the substrate independently of plasma generation.

As a specific example of the plasma treatment, when the liner is made of high-purity quartz and the predetermined material film on the substrate is dry-etched by using a halogen-based gas, the high-density plasma generated activates the plasma. Reactive halogenide ion (halogen radical)
Reacts with the silicon oxide of the liner to produce silicon oxyhalide or silicon halide.

The silicon oxyhalide produced as described above is represented by SiO _m X _n (2m + n = 4) (1) where halogen is X, and the silicon halide is SiX _n ( n = 1 to 4) ... (2) The silicon oxyhalide and the low-order silicon halide in the case of n = 1 and 2 in the formula (2) are selectively deposited on a silicon compound film such as a silicon oxide film or a silicon nitride film having high polarity. However, it has a property that it is difficult to deposit on a silicon film having low polarity.

Therefore, at the time of dry etching, silicon oxyhalide or low-order halogenated silicon produced from the liner near the substrate is a highly polar silicon compound film, for example, a gate oxide film made of a silicon oxide film or an interlayer insulating film. By selectively depositing on the film to form a film, the selection ratio to the gate oxide film and the selection ratio to the interlayer insulating film can be improved.

[0030]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, as a preferred example of a plasma apparatus according to the present invention, a so-called inductively coupled plasma etching apparatus (hereinafter simply referred to as a plasma apparatus) and some specific plasma processing methods using the plasma apparatus will be described. Examples will be described with reference to the drawings.

First, the first embodiment will be described. The plasma device of the first embodiment performs a predetermined dry etching on a substrate placed in a high vacuum container kept in a high vacuum state by using high density plasma generated in the high vacuum container. It is a thing.

The above plasma device, as shown in FIG.
It has a high-vacuum container 2 in which a silicon substrate 1 is housed. The high-vacuum container 2 has an upper lid-shaped insulating bell jar 11 made of ceramic, and a reactor 12 installed below the insulating bell jar 11. Reactor 1
The insulating bell jar 11 is installed and fixed on the upper surface of the second member via the O-ring 31 to form a closed structure.

The insulating bell jar 11 has a substantially hemispherical shape, and is formed by spirally winding a non-resonant multi-turn antenna 21, which is a plasma generating coil, on the outer peripheral portion. In this non-resonant multi-turn antenna 21,
An RF power supply 22 for plasma excitation, one end of which is grounded, is electrically connected via a matching network 23 for impedance matching. When plasma is generated, the RF power supply 22 for plasma excitation supplies high frequency waves to the non-resonant multi-turn antenna 21. Power is supplied.

The reactor 12 is composed of a substrate stage 24 also serving as a bottom plate of the reactor 12, and a side wall portion 26 provided with an etching gas introducing pipe 25. An O-ring 32 is provided on the substrate stage 24. The side wall portion 26 is fixed via.

The substrate stage 24 has a substrate electrode 33 having conductivity incorporated in a portion in contact with the substrate 1, and an exhaust hole (not shown) for exhausting the high vacuum container 2 is provided. There is. A bias applying RF power source 34 having one end grounded is electrically connected to the substrate electrode 33 via the matching network 23.

Here, by applying an AC voltage of a predetermined frequency from the RF power source 34 for bias application to the substrate electrode 33, the AC voltage is applied to the substrate 1 as a substrate bias. The substrate electrode 33 is for controlling the energy of ions incident from the plasma by applying a substrate bias.

The side wall portion 26 includes a grounding portion 34 made of anodized aluminum and a wall electrode 36 made of anodized aluminum disposed below the grounding portion 34 via a ceramic insulating plate 35. , The high vacuum container 2 for the device wall electrode 36
And a liner 37 capable of supplying a predetermined chemical species by the plasma coated on the exposed surface inside. Here, the gas introduction pipe 25 is opened into the high vacuum container 2 through the grounding portion 34, and one end is grounded to the device wall electrode 36 through the matching network 23. 38 is electrically connected.

Using the plasma apparatus having the above-mentioned configuration, high-frequency power is supplied from the plasma excitation RF power source 22 to the non-resonant multi-turn antenna 21 to generate high-density plasma, and at the same time, the vessel wall power source 38 is used. Three
By applying an AC voltage having a low frequency that does not affect the plasma generation to 6, an ion sheath is also formed on the exposed surface of the container wall electrode 36 in the high vacuum container 2, and the DC electric field causes the ion sheath.・ Sputtering action can be expected. In this case, since the exposed surface is covered with the liner 37, this is sputtered.
Therefore, the chemical species can be supplied from the liner 37 independently of plasma generation.

Next, a second embodiment of the present invention will be described. In the second embodiment, the plasma apparatus configured as described above is used to perform a predetermined plasma treatment on the silicon substrate placed on the substrate stage 24 as described below. Here, a case where a gate electrode of a MOS transistor is processed on the silicon substrate 21 will be described.

First, as shown in FIG. 2, element isolation regions (not shown) are formed by selectively oxidizing the surface of a silicon substrate 41 made of single crystal silicon, and then the elements are separated by the element isolation regions. The surface of the element forming region is thermally oxidized to form a gate oxide film 42 made of SiO ₂ .

Then, a polycrystalline silicon film 43 is formed on the surface of each element forming region including the surface of the element isolation layer by using a vacuum thin film forming technique such as plasma CVD. afterwards,
The gate electrode 45 is formed by patterning the polycrystalline silicon film 43. That is, a photoresist is applied to each element formation region, and after undergoing steps such as exposure and development, anisotropic dry etching shown below is performed through the formed resist mask 44 to form a gate as shown in FIG. Electrode 4
5 is formed.

In order to perform anisotropic dry etching using the plasma apparatus, first, the silicon substrate 21 is placed and fixed on the substrate stage 24 in the high vacuum container 2 and the inside of the high vacuum container 2 is set to a predetermined position. Vacuum exhaust is performed from the exhaust hole provided in the lower part of the substrate stage 24 until the gas pressure is reached. After that, Cl ₂ as an etching gas is introduced at a predetermined flow rate from a gas introduction pipe 25 provided in the side wall portion 26 of the reactor 12.

In this state, the RF power source 22 for plasma excitation
From the non-resonant multi-turn antenna 21 to a predetermined frequency R
The F voltage (source voltage) is applied and the substrate power supply 3
An AC voltage having a predetermined frequency is applied to the substrate electrode 33 from 4 to apply a substrate bias to the silicon substrate 41. Further, at this time, an AC voltage (wall voltage) of a predetermined frequency is applied from the wall power source 38 to the wall electrode 36 together with the application of the RF voltage and the substrate bias.

By the application of the source voltage, a magnetic field is formed inside each non-resonant multi-turn antenna 21 and electrons are rotated along the lines of magnetic force, so that the electrons and Cl ₂ gas molecules in the high vacuum chamber 2 become high. Collision with a probability of about 10 ¹¹ to 10
A high density plasma with an ion density of ¹² / cm ³ is generated.
Due to the generation of this high-density plasma, the polycrystalline silicon film 43 formed on the gate oxide film of the silicon substrate 41 is etched, and the gate electrode 45 regulated to a predetermined shape by the resist mask 44 is formed. . At this time, the resist mask 44 is also slightly etched, and the decomposed product of the resist mask 44 generated therefor is deposited on the side wall portion of the gate material to be etched to form the side wall protective film 46.

At the same time, the application of the above-mentioned wall voltage causes the reactive chlorine ions (Cl ⁺ ) activated by the high-density plasma to react with the quartz (SiO ₂ ) of the liner 37, and the oxychlorination shown below. Silicon and silicon chloride are produced.

SiO _m Cl _n (2m + n = 4) (3) SiH _n (n = 1 to 4) (4) This silicon oxychloride or n = 1, 2 in the formula (4) A certain low-order silicon chloride has a property that it is selectively deposited on a silicon dioxide film or a silicon nitride film having a high polarity and is hard to be deposited on a silicon film having a low polarity.

Therefore, the generated silicon oxychloride or low-order silicon chloride is selectively deposited on the exposed surface of the gate oxide film 43 which is a highly polar silicon dioxide film to form a film. On the other hand, silicon oxychloride and the low-order silicon chloride are difficult to deposit on the polycrystalline silicon film 43 having a low polarity. Therefore, even if the selection ratio of the polycrystalline silicon film 43 to the gate oxide film is increased, the desired gate electrode 45 can be formed without lowering the etching rate of the polycrystalline silicon film 43.

In the second embodiment, the dry etching is specifically performed under the following conditions.

Cl ₂ flow rate 50 SCCM Gas pressure 0.13 Pa Source power 2000 W (13.56 MHz) Substrate bias power 300 W (400 KHz) Power applied to the instrument wall electrode 300 W (100 KHz) Power applied to the instrument wall electrode in this case And the etching rate (ERg) of the gate oxide film are shown in FIG. 4, and the applied power to the wall electrode and the selection ratio (Sg) of the polycrystalline silicon film to the gate oxide film / the etching rate of the polycrystalline silicon film (E
The relationship with Rp) is shown in FIG.

According to FIG. 4, the ERg was 15 nm / sec at the beginning when the wall voltage was applied, and the ERg showed a sharp decrease as the applied power increased. It is considered that this is because the silicon oxychloride or the low-order silicon chloride generated as described above is selectively deposited on the gate oxide film and the etching is suppressed.

Further, according to FIG. 5, ERp was 300 nm / sec at the beginning when the wall voltage was applied, and after that, even if the applied power increased, the ERp showed almost no decrease.
Was about 20 initially, but showed a sharp increase as the applied power increased. It is considered that this is because silicon oxychloride and low-order silicon chloride are hardly deposited on the polycrystalline silicon film.

As described above, in the second embodiment,
While maintaining a high etching rate of the polycrystalline silicon film, increasing the selection ratio of the polycrystalline silicon film to the gate oxide film,
It was shown that it is possible to form the gate electrode with high etching uniformity.

In the high vacuum container 2, the liner 3
Since 7 is provided in the vicinity of the silicon substrate 41, here below the side wall portion 26, the deposit generated from the liner 37 is generated only in the vicinity of the silicon substrate 41. Therefore, it is possible to suppress the generation of extra particles in the entire high vacuum container 2, and it is possible to efficiently increase the selection ratio of the polycrystalline silicon film to the gate oxide film.

In the second embodiment, an example using Cl ₂ as an etching gas is shown.
Even if r or HI is used, the same effect as above can be obtained.

Next, a third embodiment will be described. In the third embodiment, a mixed gas of chlorine gas (Cl ₂ ) and boron trichloride gas (BCl ₃ ) is used as an etching gas, and an aluminum material film and a resist pattern are sequentially formed on an insulating film made of SiO _2. Dry etching is performed on the formed silicon substrate 1 to form aluminum wiring.

First, as shown in FIGS. 6 and 7, the thermal CV is used.
An SiO ₂ -based interlayer insulating film 51 doped with phosphorus or boron is formed by the D method. After that, Ti and TiN are sequentially formed on the surface of the inter-layer insulating film 51 to form 2
A barrier metal 52 having a layered structure is formed.

Next, the entire surface of the silicon substrate 1 is sputtered with an Al-1% Si alloy or Al-1% S.
An aluminum-based material film 53 made of i-0.5% Cu alloy is formed, and an antireflection film 54 made of TiN is further formed on the aluminum-based material film 53.

After forming the resist mask 55, dry etching is performed using the above plasma device to form the aluminum wiring 56. At this time, aluminum wiring 5
As 6 is formed, the decomposed product of the resist mask 55 is deposited on the side wall of the aluminum wiring 56 or the aluminum-based material film 53 which is being etched, and the side wall protective film 57 is formed.

In the third embodiment, the dry etching is specifically performed under the following conditions.

Cl ₂ flow rate 150 SCCM BCl ₃ flow rate 30 SCCM Gas pressure 0.4 Pa Source power 2000 W (13.56 MHz) Substrate bias power 300 W (400 KHz) Power applied to the wall electrode 300 W (100 KHz) In this case, The dry etching is performed in the same manner as in the second embodiment, but the reactive Cl ⁺ ions and BCl _n ⁺ ions (n = 1 to 3) activated by the high-density plasma are applied by applying the wall voltage. Quartz (SiO ₂ ) of the liner 37 reacts in high-density plasma to generate silicon oxychloride and low-order silicon chloride represented by the formulas (3) and (4) as in the case of the second embodiment. To be done.

Therefore, these silicon oxychlorides and low-order silicon chlorides are selectively deposited on the interlayer insulating film 51, which is a silicon dioxide film having high polarity, and are difficult to deposit on the aluminum-based material film 53. , Aluminum-based material film 5
The selection ratio of the aluminum-based material film 53 to the insulating film can be increased without lowering the etching rate of No. 3.

Unlike the gate oxide film 42 formed by thermal oxidation, the interlayer insulating film 51 is grown by doping phosphorus or boron by the thermal CVD method as described above. It is difficult to obtain a selection ratio as compared with the thermal oxide film, and in the past, the selection ratio to the interlayer insulating film was about 10, but in the third embodiment, it is possible to obtain a value of 20 or more.

In each of the above embodiments, the inductively coupled plasma etching apparatus has been described as an example, but the present invention is not limited to this. For example, plasma using an electron cyclotron resonance plasma source. It can also be applied to those using an etching device or a helicon wave plasma source. Moreover, not only SiO ₂ but also SiN may be used as the material of the insulating film.

[0064]

As described above, according to the present invention, it is possible to significantly improve the selection ratio to the silicon compound film without significantly reducing the etching rate of the material to be etched.
Fine gate electrode processing and other wiring processing can be performed with extremely high precision, and it is possible to contribute to high integration, high reliability, and high performance of semiconductor devices.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a plasma device according to an embodiment.

FIG. 2 is a cross-sectional view schematically showing how a resist mask is formed on a polycrystalline silicon film.

FIG. 3 is a cross-sectional view schematically showing how a gate electrode is formed under a resist mask.

FIG. 4 is a characteristic diagram showing a relationship between an applied power of a wall voltage and an etching rate of a gate oxide film.

FIG. 5 is a characteristic diagram showing a relationship between an applied power of a wall voltage, a selection ratio of a polycrystalline silicon film to a gate oxide film, and a relationship with an etching rate of the polycrystalline silicon film.

FIG. 6 is a cross-sectional view schematically showing a state in which a barrier metal, an aluminum-based material film, an antireflection film, and a resist mask are formed on the interlayer insulating film.

FIG. 7 is a cross-sectional view schematically showing how aluminum wiring is formed under a resist mask.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 High vacuum container 11 Insulation bell jar 12 Reactor 21 Non-resonant multi-turn antenna 33 Substrate electrode 34 RF power source for bias application 36 Instrument wall electrode 37 Liner 38 Instrument wall power source

Claims (9)

[Claims] 1. A plasma apparatus for subjecting a substrate to a predetermined plasma treatment using a high-density plasma generated in a high-vacuum container containing a substrate, wherein the substrate is insulated from the wall of the high-vacuum container in the vicinity of the substrate. And a wall electrode connected to an AC power source is arranged, and an exposed surface of the wall electrode inside the high vacuum container is covered with a liner capable of supplying a predetermined chemical species by the plasma. And plasma equipment. 2. The plasma apparatus according to claim 1, wherein a plasma generating coil is wound around an upper lid portion of the high vacuum container, and high frequency power is supplied to the plasma generating coil to generate plasma. . 3. The plasma device according to claim 1, wherein the liner is made of a silicon compound. 4. The plasma device according to claim 1, wherein the silicon compound is made of high-purity quartz. 5. A high-density plasma generated in a high-vacuum container containing the substrate is used to subject the substrate to a predetermined plasma treatment, and the vicinity of the substrate is insulated from a wall of the high-vacuum container. While the wall electrodes are placed,
Using a plasma device in which the exposed surface of the vessel wall electrode in the high vacuum container is covered with a liner capable of supplying a predetermined chemical species by the plasma, the AC voltage applied to the vessel wall electrode is independent of plasma generation. The plasma processing method is characterized in that the predetermined plasma processing is performed while supplying the predetermined deposition material onto the substrate by the interaction between the plasma and the liner. 6. A plasma device in which a plasma generating coil is wound around an upper lid portion of a high vacuum container, and high frequency power is supplied to the plasma generating coil to generate plasma. The plasma processing method described. 7. The dry etching in which the liner is made of high-purity quartz and a predetermined material film on the substrate is etched using a halogen-based gas as the predetermined plasma treatment is performed. Plasma processing method. 8. The plasma processing method according to claim 7, wherein the predetermined material film on the substrate is a silicon-based material film. 9. The plasma processing method according to claim 7, wherein the predetermined material film on the substrate is an aluminum-based material film.