JPH08304107A - Magnetic sensor - Google Patents
Magnetic sensorInfo
- Publication number
- JPH08304107A JPH08304107A JP7135710A JP13571095A JPH08304107A JP H08304107 A JPH08304107 A JP H08304107A JP 7135710 A JP7135710 A JP 7135710A JP 13571095 A JP13571095 A JP 13571095A JP H08304107 A JPH08304107 A JP H08304107A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating substrate
- magnetic
- chromium
- effect element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 49
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 31
- 239000011651 chromium Substances 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000000694 effects Effects 0.000 claims abstract description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims abstract description 11
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 8
- 239000000696 magnetic material Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 58
- 230000001681 protective effect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁気センサ、特に工作
機、ＦＡ機器等の制御端の位置、速度又は角度等の検出
器として用いられる磁気エンコーダ用磁気センサに関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic sensor and, more particularly, to a magnetic sensor for a magnetic encoder used as a detector for detecting the position, speed or angle of a control end of a machine tool or FA equipment.
【０００２】[0002]
【従来の技術】図４は従来の磁気エンコーダを示し、１
は磁気ドラム、２はこの磁気ドラム１上に記録した一定
記録波長の信号である磁気情報、３は上記磁気ドラム１
と一定の間隙を介して対向配置されている磁気センサで
ある。2. Description of the Related Art FIG. 4 shows a conventional magnetic encoder.
Is a magnetic drum, 2 is magnetic information which is a signal of a constant recording wavelength recorded on the magnetic drum 1, and 3 is the magnetic drum 1
And a magnetic sensor arranged to face each other with a certain gap therebetween.
【０００３】図５及び図６は上記従来の磁気エンコーダ
用磁気センサ３を示し、４はガラス等非磁性体の絶縁基
板、５はこの絶縁基板４上に形成された厚さ２００〜５
００Åのパーマロイまたはニッケル・コバルト等から成
る強磁性体の薄膜の異方性磁気抵抗効果素子、５´は上
記異方性磁気抵抗効果素子５に連なる幅の広い電流通
路、６は同じく端子部ベースとなるクロム膜、７は上記
異方性磁気抵抗効果素子５及びその電流通路５´を保護
するための厚さ１〜２μのＳｉＯ２保護膜、８は同じく
厚さ２μ程度のポリイミド等の有機保護膜、９は上記Ｓ
ｉＯ２保護膜７と上記ポリイミド保護膜８を化学的エッ
チング法で取り除き、露出した上記クロム膜６上に形成
した外部接続配線用銅膜である。5 and 6 show the above-mentioned conventional magnetic sensor 3 for a magnetic encoder, 4 is an insulating substrate made of a non-magnetic material such as glass, and 5 is a thickness 200 to 5 formed on the insulating substrate 4.
An anisotropic magnetoresistive effect element 5'of a ferromagnetic thin film made of 00Å permalloy or nickel-cobalt or the like, 5'is a wide current path connected to the anisotropic magnetoresistive effect element 5, and 6 is a terminal base A chromium film, 7 is an SiO 2 protective film having a thickness of 1 to 2 μ for protecting the anisotropic magnetoresistive effect element 5 and its current path 5 ′, and 8 is an organic protective film of polyimide or the like having a thickness of about 2 μ. Membrane, 9 is the above S
This is a copper film for external connection wiring formed on the exposed chromium film 6 by removing the iO2 protective film 7 and the polyimide protective film 8 by a chemical etching method.
【０００４】図６の例では、ガラス等の非磁性体の絶縁
基板４上にまずクロム膜６を形成し、このクロム膜６の
一部分のみに上記異方性磁気抵抗効果素子５の電流通路
５´を重ねて形成している。In the example of FIG. 6, a chromium film 6 is first formed on a non-magnetic insulating substrate 4 such as glass, and the current path 5 of the anisotropic magnetoresistive element 5 is formed only on a part of the chromium film 6. ′ Are overlapped.
【０００５】また、図７に示す従来の磁気センサでは、
絶縁基板４上にまず異方性磁気抵抗効果素子５を形成せ
しめ、この異方性磁気抵抗効果素子５の電流通路５´の
一部分に重なるようにクロム膜６を形成している。In the conventional magnetic sensor shown in FIG.
First, an anisotropic magnetoresistive element 5 is formed on an insulating substrate 4, and a chromium film 6 is formed so as to overlap a part of a current path 5 ′ of the anisotropic magnetoresistive element 5.
【０００６】端子部分のクロム膜６は、絶縁基板である
ガラスとの密着性が非常に良いので一般的に良く用いら
れている。The chromium film 6 in the terminal portion is generally used because it has a very good adhesion to glass which is an insulating substrate.
【０００７】[0007]
【発明が解決しようとする課題】然しながら、上記図５
〜図７に示した従来の磁気センサにおいては、外部電源
は銅膜９からクロム膜６を通して異方性磁気抵抗効果素
子５の電流通路５´に接続され、上記クロム膜６の抵抗
が大きいため、結果として端子部抵抗が大きくなり、ま
た、クロム膜６の比抵抗の経時変化も大きいという欠点
があった。However, FIG.
In the conventional magnetic sensor shown in FIG. 7, the external power source is connected from the copper film 9 through the chromium film 6 to the current path 5'of the anisotropic magnetoresistive effect element 5, and the resistance of the chromium film 6 is large. As a result, there is a drawback that the resistance of the terminal portion becomes large, and the change in the specific resistance of the chromium film 6 with time is large.
【０００８】本発明は上記の欠点を除くようにしたもの
である。The present invention eliminates the above drawbacks.
【０００９】[0009]
【課題を解決するための手段】本発明の磁気センサは、
非磁性体の絶縁基板と、この非磁性体の絶縁基板上に形
成された異方性磁気抵抗効果素子と、その一部が上記異
方性磁気抵抗効果素子に連なる電流通路の一部に重なる
よう上記非磁性体の絶縁基板上に形成された端子部形成
用クロム膜と、このクロム膜上に形成されたアルミニウ
ム膜と、このアルミニウム膜上に形成した外部接続配線
用銅膜とより成る。The magnetic sensor of the present invention comprises:
A non-magnetic insulating substrate, an anisotropic magnetoresistive effect element formed on the non-magnetic insulating substrate, and a part of the anisotropic magnetoresistive effect element overlapping with a part of a current path connected to the anisotropic magnetoresistive effect element. As described above, the terminal portion forming chromium film is formed on the non-magnetic insulating substrate, the aluminum film is formed on the chromium film, and the external connection wiring copper film is formed on the aluminum film.
【００１０】また、本発明の磁気センサは、非磁性体の
絶縁基板と、この非磁性体の絶縁基板上に形成された異
方性磁気抵抗効果素子と、その一部が上記異方性磁気抵
抗効果素子に連なる電流通路の一部に重なるよう上記非
磁性体の絶縁基板上に形成された端子部形成用クロム膜
と、このクロム膜上に形成されたアルミニウム膜と、こ
のアルミニウム膜上に形成したニッケル膜と、このニッ
ケル膜上に形成した外部接続配線用銅膜とより成る。Further, the magnetic sensor of the present invention includes a non-magnetic insulating substrate, an anisotropic magnetoresistive effect element formed on the non-magnetic insulating substrate, and a part of the anisotropic magnetic resistance element. A terminal portion forming chromium film formed on the non-magnetic insulating substrate so as to overlap a part of a current path connected to the resistance effect element, an aluminum film formed on the chromium film, and an aluminum film formed on the aluminum film. The formed nickel film and the copper film for external connection wiring formed on the nickel film.
【００１１】また、本発明の磁気センサにおいては、上
記磁気抵抗効果素子の電流通路の少なくとも一部を上記
非磁性体の絶縁基板上に形成された端子部形成用クロム
膜と、このクロム膜上に形成されたアルミニウム膜とに
よって形成できる。Further, in the magnetic sensor of the present invention, at least a part of the current path of the magnetoresistive element is formed on the nonmagnetic insulating substrate, and a chromium film for forming a terminal portion is formed on the chromium film. It can be formed by the aluminum film formed on.
【００１２】[0012]
【作用】本発明の磁気センサによれば、クロム膜６の上
に比抵抗の非常に低いアルミニウム膜が形成されるの
で、異方性磁気抵抗効果素子５の電流通路５´と端子部
間の抵抗値を無視できる位小さくできる。According to the magnetic sensor of the present invention, since the aluminum film having a very low specific resistance is formed on the chromium film 6, the current path 5'of the anisotropic magnetoresistive effect element 5 and the terminal portion are formed. The resistance value can be made small enough to be ignored.
【００１３】[0013]
【実施例】以下図面によって本発明の実施例を説明す
る。Embodiments of the present invention will be described below with reference to the drawings.
【００１４】本発明の磁気センサにおいては、図１に示
すように上記クロム膜６上にその略全長に亘り比抵抗の
小さいアルミニウム膜１０を形成する。In the magnetic sensor of the present invention, as shown in FIG. 1, an aluminum film 10 having a small specific resistance is formed on the chromium film 6 over substantially the entire length thereof.
【００１５】なお、端子部のベースを形成しているクロ
ム膜６はガラスとの密着が非常に良いが、クロム膜６の
表面にできる酸化膜が強固で他の物質との密着性を悪く
している。そのため、本発明においては、クロム膜６と
アルミニウム膜１０を真空中で同時に蒸着し、クロム膜
６を空気中に暴露することなくアルミニウム膜１０を形
成することにより、クロム膜６とアルミニウム膜１０の
密着を良好ならしめる。The chromium film 6 forming the base of the terminal portion has very good adhesion to glass, but the oxide film formed on the surface of the chromium film 6 is strong and the adhesion to other substances is deteriorated. ing. Therefore, in the present invention, the chromium film 6 and the aluminum film 10 are simultaneously vapor-deposited in a vacuum, and the aluminum film 10 is formed without exposing the chromium film 6 to the air. Good adhesion is achieved.
【００１６】次に、上記アルミニウム膜１０上に外部接
続配線用ニッケル膜１１と銅膜９をこの順序で同時に蒸
着する。上記ニッケル膜１１は省略することができる。Next, a nickel film 11 for external connection wiring and a copper film 9 are simultaneously deposited on the aluminum film 10 in this order. The nickel film 11 can be omitted.
【００１７】図２及び図３は、本発明の他の実施例を示
し、この実施例では異方性磁気抵抗効果素子５の電流通
路５´の少なくとも一部を上記クロム膜６とアルミニウ
ム膜１０により形成せしめる。2 and 3 show another embodiment of the present invention. In this embodiment, at least a part of the current path 5'of the anisotropic magnetoresistive effect element 5 is provided with the chromium film 6 and the aluminum film 10. To form.
【００１８】これにより各部分が互いに密着し、しかも
クロム膜６が、抵抗の小さいアルミニウム膜１０で短絡
された状態になるため端子部引き出し抵抗値の小さい構
成となし得る。As a result, the respective portions adhere to each other, and the chromium film 6 is short-circuited by the aluminum film 10 having a small resistance.
【００１９】なお、図２に示す実施例ではクロム膜６を
銅膜９に対応する部分のみに形成しても良い。In the embodiment shown in FIG. 2, the chromium film 6 may be formed only on the portion corresponding to the copper film 9.
【００２０】[0020]
【発明の効果】上記のように本発明の磁気センサによれ
ば、端子部を構成する各層の密着強度を強くすることが
でき、また、端子部引き出し抵抗値を小さく出来るとい
う大きな利益がある。As described above, according to the magnetic sensor of the present invention, there is a great advantage that the adhesion strength of each layer constituting the terminal portion can be increased and the resistance value of the terminal portion can be reduced.
【図１】本発明の磁気センサの縦断側面図である。FIG. 1 is a vertical sectional side view of a magnetic sensor of the present invention.
【図２】本発明の他の実施例における磁気センサの縦断
側面図である。FIG. 2 is a vertical sectional side view of a magnetic sensor according to another embodiment of the present invention.
【図３】図２に示す磁気センサの一部を断面とした斜視
図である。FIG. 3 is a perspective view showing a cross section of a part of the magnetic sensor shown in FIG. 2;
【図４】従来の磁気エンコーダの説明用斜視図である。FIG. 4 is a perspective view for explaining a conventional magnetic encoder.
【図５】従来の磁気センサの一部を断面とした斜視図で
ある。FIG. 5 is a perspective view showing a cross section of a part of a conventional magnetic sensor.
【図６】従来の磁気センサの縦断側面図である。FIG. 6 is a vertical sectional side view of a conventional magnetic sensor.
【図７】従来の他の磁気センサの縦断側面図である。FIG. 7 is a vertical sectional side view of another conventional magnetic sensor.
１ 磁気ドラム ２ 磁気情報 ３ 磁気センサ ４ 絶縁基板 ５ 異方性磁気抵抗効果素子 ５´ 電流通路 ６ クロム膜 ７ ＳｉＯ２保護膜 ８ 有機保護膜 ９ 銅膜 １０ アルミニウム膜 １１ 外部接続配線用ニッケル膜 DESCRIPTION OF SYMBOLS 1 Magnetic drum 2 Magnetic information 3 Magnetic sensor 4 Insulating substrate 5 Anisotropic magnetoresistance effect element 5 'Current path 6 Chromium film 7 SiO2 protective film 8 Organic protective film 9 Copper film 10 Aluminum film 11 Nickel film for external connection wiring
Claims (3)
絶縁基板上に形成された異方性磁気抵抗効果素子と、そ
の一部が上記異方性磁気抵抗効果素子に連なる電流通路
の一部に重なるよう上記非磁性体の絶縁基板上に形成さ
れた端子部形成用クロム膜と、このクロム膜上に形成さ
れたアルミニウム膜と、このアルミニウム膜上に形成し
た外部接続配線用銅膜とより成ることを特徴とする磁気
センサ。1. A non-magnetic insulating substrate, an anisotropic magnetoresistive effect element formed on the non-magnetic insulating substrate, and a current passage part of which is continuous with the anisotropic magnetoresistive effect element. Of the terminal portion forming chromium film formed on the non-magnetic insulating substrate so as to partially overlap with the aluminum film, the aluminum film formed on the chromium film, and the external connection wiring copper formed on the aluminum film. A magnetic sensor comprising a film.
絶縁基板上に形成された異方性磁気抵抗効果素子と、そ
の一部が上記異方性磁気抵抗効果素子に連なる電流通路
の一部に重なるよう上記非磁性体の絶縁基板上に形成さ
れた端子部形成用クロム膜と、このクロム膜上に形成さ
れたアルミニウム膜と、このアルミニウム膜上に形成し
たニッケル膜と、このニッケル膜上に形成した外部接続
配線用銅膜とより成ることを特徴とする磁気センサ。2. A non-magnetic insulating substrate, an anisotropic magnetoresistive effect element formed on this non-magnetic insulating substrate, and a current passage part of which is continuous with the anisotropic magnetoresistive effect element. A chromium film for forming a terminal portion formed on the non-magnetic insulating substrate so as to partially overlap with the aluminum film, an aluminum film formed on the chromium film, a nickel film formed on the aluminum film, and A magnetic sensor comprising a copper film for external connection wiring formed on a nickel film.
くとも一部が上記非磁性体の絶縁基板上に形成された端
子部形成用クロム膜と、このクロム膜上に形成されたア
ルミニウム膜とによって形成されていることを特徴とす
る請求項１または２記載の磁気センサ。3. A chrome film for forming a terminal portion, in which at least a part of a current path of the magnetoresistive effect element is formed on the non-magnetic insulating substrate, and an aluminum film formed on the chrome film. It is formed, The magnetic sensor of Claim 1 or 2 characterized by the above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7135710A JP2651808B2 (en) | 1995-05-10 | 1995-05-10 | Magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7135710A JP2651808B2 (en) | 1995-05-10 | 1995-05-10 | Magnetic sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08304107A true JPH08304107A (en) | 1996-11-22 |
| JP2651808B2 JP2651808B2 (en) | 1997-09-10 |
Family
ID=15158080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7135710A Expired - Fee Related JP2651808B2 (en) | 1995-05-10 | 1995-05-10 | Magnetic sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2651808B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03205574A (en) * | 1990-01-08 | 1991-09-09 | Hitachi Metals Ltd | Magnetic sensor |
-
1995
- 1995-05-10 JP JP7135710A patent/JP2651808B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03205574A (en) * | 1990-01-08 | 1991-09-09 | Hitachi Metals Ltd | Magnetic sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2651808B2 (en) | 1997-09-10 |
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