JPH08279326A - Hybrid integrated circuit device - Google Patents

Hybrid integrated circuit device

Info

Publication number
JPH08279326A
JPH08279326A JP7922995A JP7922995A JPH08279326A JP H08279326 A JPH08279326 A JP H08279326A JP 7922995 A JP7922995 A JP 7922995A JP 7922995 A JP7922995 A JP 7922995A JP H08279326 A JPH08279326 A JP H08279326A
Authority
JP
Japan
Prior art keywords
permanent magnet
conversion element
magnetoelectric conversion
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP7922995A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Kurumi
美幸 胡桃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP7922995A priority Critical patent/JPH08279326A/en
Publication of JPH08279326A publication Critical patent/JPH08279326A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

PURPOSE: To miniaturize the whole of a device, and to reduce the weight thereof by embedding a projection made of the strong magnetic body in a container cover so as to face to an electromagnetic converting element. CONSTITUTION: A protecting cap 5 is adhered to a board 1 to be loaded with a chip 2 of an electromagnetic converting integrated circuit, on which an electromagnetic converting element 3 is integrated, and a circular projection, which is made of the strong magnetic body 8 and which has the T-shaped cross section, is provided at a position just over the element 5 of the cap 5. With this structure, external magnetic line of force between the N and the S poles of a permanent magnet 6, which is arranged under the board 1, is easy to pass through the strong magnetic body 8, and the magnetic line of force is concentrated to the element 3 so as to heighten the magnetic flux density of the position of the element 3. Consequently, the permanent magnet 6 for trigger can be miniaturized. Furthermore, since arrangement of a concentrator outside of a container is unnecessary, whole of the device is miniaturized, and the weight is reduced. The projection is made of the permanent magnet desirably having a polarity different from the polarity of the permanent magnet 6, of which pole faces to the tip of projection.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ホール素子や磁気抵抗
素子のような磁電変換素子を含んだ混成集積回路装置に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device including a magnetoelectric conversion element such as a Hall element or a magnetoresistive element.

【0002】[0002]

【従来の技術】磁電変換素子を含む回路の動作のトリガ
のためには、素子の個所における磁界を変化させる必要
がある。通常そのような磁界の変化は、永久磁石の移動
によって引き起こす。図2は磁電変換素子を含む従来の
混成集積回路装置を示し、非磁性体よりなる基板1上に
搭載された半導体ICチップ2には磁電変換素子3が集
積されており、基板1上の図示しない配線とICチップ
3の端子は、導線4のボンディングで接続されている。
ICチップ3を封止するためのキャップ5は非磁性体よ
りなり、基板1に接着剤等で固定されている。磁電変換
素子3の個所における磁界の変化を与える永久磁石6
は、基板1をはさんでICチップ2に対向しているが、
磁電変換素子3を通る磁力線を増すために、キャップ5
の上に強磁性材料よりなるコンセントレータ10が固定
されている。磁石6を矢印11のように上下動すること
によって生ずる磁電変換素子3部の磁界の強弱が回路の
動作のトリガとなる。
2. Description of the Related Art In order to trigger the operation of a circuit including a magnetoelectric conversion element, it is necessary to change the magnetic field at the location of the element. Usually such a change in magnetic field is caused by the movement of the permanent magnet. FIG. 2 shows a conventional hybrid integrated circuit device including a magnetoelectric conversion element. A magnetoelectric conversion element 3 is integrated on a semiconductor IC chip 2 mounted on a substrate 1 made of a non-magnetic material. The non-wiring and the terminal of the IC chip 3 are connected by the bonding of the conducting wire 4.
The cap 5 for sealing the IC chip 3 is made of a non-magnetic material and is fixed to the substrate 1 with an adhesive or the like. Permanent magnet 6 for changing the magnetic field at the location of the magnetoelectric conversion element 3
Faces the IC chip 2 with the substrate 1 in between,
In order to increase the magnetic field lines passing through the magnetoelectric conversion element 3, the cap 5
A concentrator 10 made of a ferromagnetic material is fixed on the top. The strength of the magnetic field of the magnetoelectric conversion element 3 portion generated by moving the magnet 6 up and down as shown by the arrow 11 triggers the operation of the circuit.

【0003】[0003]

【発明が解決しようとする課題】しかし、磁電変換素子
3の必要とする磁束密度を生ずるために、図2に示すよ
うに混成集積回路の容器に比較して大きな磁石6および
コンセントレータ10を容器外に備えなければならず、
混成集積回路装置が大型となる問題がある。また、磁電
変換素子を集積したICは、付属回路を取り込んで集積
度やチップサイズが次第に大きくなる傾向があり、磁石
6による磁気変化が周辺回路に影響を及ぼし、誤動作の
起こるおそれがある。
However, in order to generate the magnetic flux density required by the magnetoelectric conversion element 3, as shown in FIG. 2, the magnet 6 and the concentrator 10 which are larger than the container of the hybrid integrated circuit are provided outside the container. To prepare for
There is a problem that the hybrid integrated circuit device becomes large. Further, an IC in which a magnetoelectric conversion element is integrated tends to have an increased degree of integration and a chip size by incorporating an accessory circuit, and a magnetic change by the magnet 6 may affect a peripheral circuit to cause a malfunction.

【0004】本発明の目的は、上述の問題を解決し、磁
束発生手段を小さくして小型、軽量の混成集積回路装置
を提供することにある。
An object of the present invention is to solve the above problems and to provide a small-sized and lightweight hybrid integrated circuit device by reducing the magnetic flux generating means.

【0005】[0005]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明は、磁電変換素子を含む半導体素子がそれ
ぞれ非磁性体よりなる基板と蓋体とよりなる容器内に収
容され、容器外に永久磁石がその一つの極を基板をはさ
んで磁電変換素子に対向させて配置される混成集積回路
装置において、磁電変換素子の前記永久磁石の極と反対
側の位置で蓋体に強磁性体よりなる突起が設置されたも
のとする。突起が磁電変換素子に向かって突出している
ことが有効である。突起が永久磁石であり、先端が磁電
変換素子をはさんで対向する容器外の永久磁石の極と異
なる極性を有することも良い。磁電変換素子が他の半導
体素子と共に一つの半導体素体に集積されたことも良
い。
In order to achieve the above object, the present invention provides a semiconductor element including a magnetoelectric conversion element, which is housed in a container made of a non-magnetic substrate and a lid, respectively. In a hybrid integrated circuit device in which a permanent magnet is placed outside so that one pole of the permanent magnet faces the magnetoelectric conversion element with the substrate sandwiched between the permanent magnet and the magnet, the lid of the magnetoelectric conversion element is opposite to the pole of the permanent magnet. It is assumed that a protrusion made of a magnetic material is installed. It is effective that the protrusion projects toward the magnetoelectric conversion element. The protrusion may be a permanent magnet, and the tip may have a polarity different from the pole of the permanent magnet outside the container that faces the magnetoelectric conversion element and is opposed to the pole. The magnetoelectric conversion element may be integrated with another semiconductor element in one semiconductor element body.

【0006】[0006]

【作用】磁電変換素子をはさんで容器外の永久磁石に対
向して容器蓋体に強磁性体の突起を設置し、さらには磁
電変換素子に向かって突出させることにより容器外に大
きなコンセントレータを配置させた場合より磁力線を磁
電変換素子に集中させることができる。また磁力線の集
中により、周辺の付属回路その他の電子回路部分を通る
磁束密度が下がる。また、蓋体に埋込む強磁性体を着磁
して永久磁石にし、容器外の永久磁石と異なる極性の極
を対向させることにより、磁気バイアスがかかり、磁電
変換素子部における磁束密度が増大する。
[Function] A large concentrator is placed outside the container by placing a ferromagnetic protrusion on the container lid so as to face the permanent magnet outside the container with the magnetoelectric conversion element interposed therebetween, and further projecting toward the magnetoelectric conversion element. Lines of magnetic force can be concentrated on the magnetoelectric conversion element more than when they are arranged. Also, due to the concentration of the lines of magnetic force, the magnetic flux density passing through the peripheral auxiliary circuits and other electronic circuit parts is reduced. Further, by magnetizing the ferromagnetic material embedded in the lid to make it a permanent magnet, and by making the poles of different polarities from those of the permanent magnet outside the container face each other, magnetic bias is applied and the magnetic flux density in the magnetoelectric conversion element section increases. .

【0007】[0007]

【実施例】以下、図2と共通の部分に同一の符号を付し
た図を引用して本発明の実施例について説明する。図1
に示した実施例では、基板上にホール素子あるいは磁気
抵抗素子などの磁電変換素子3を集積した磁電変換IC
のチップ2が他の回路部品12と共に搭載され、ICチ
ップを封止する非磁性体の保護キャップ5が接着剤7に
より接着されている。このキャップ5の磁電変換素子3
の直上の位置に断面T字状で円形の強磁性体7が磁電変
換素子側に突起状に突出して埋込まれている。これによ
り、基板1の下に配置された永久磁石6のNS極間の外
部磁力線が強磁性体8を通りやすいため、磁電変換素子
3の個所における磁束密度が増大する。そして永久磁石
の矢印方向11の移動によるその磁束密度の変化量が大
きくなる。
Embodiments of the present invention will be described below with reference to the drawings in which the same parts as those in FIG. FIG.
In the embodiment shown in FIG. 1, a magnetoelectric conversion IC in which a magnetoelectric conversion element 3 such as a Hall element or a magnetoresistive element is integrated on a substrate.
2 is mounted together with other circuit components 12, and a non-magnetic protective cap 5 for sealing the IC chip is adhered by an adhesive 7. Magnetoelectric conversion element 3 of this cap 5
A circular ferromagnetic material 7 having a T-shaped cross section is embedded in a position directly above the magnetic field conversion element side so as to project in a protruding shape. As a result, the external magnetic field lines between the NS poles of the permanent magnet 6 arranged under the substrate 1 easily pass through the ferromagnetic body 8, so that the magnetic flux density at the location of the magnetoelectric conversion element 3 increases. Then, the amount of change in the magnetic flux density due to the movement of the permanent magnet in the arrow direction 11 increases.

【0008】図3に一部分のみ示した別の実施例では、
図1の強磁性体が突出部先端がS極に着磁された永久磁
石9に置換えられている。基板1の下の永久磁石6のN
極からキャップ5に埋込まれた永久磁石9のS極に至る
磁力線は大部分磁電変換素子3付近を通るため、永久磁
石6の磁力を低下させても磁電変換素子部における必要
な磁束密度を確保でき、安価な永久磁石を用いることが
できる。
In another embodiment, only a portion of which is shown in FIG.
The ferromagnetic material shown in FIG. 1 is replaced with a permanent magnet 9 whose end of the protrusion is magnetized to have an S pole. N of the permanent magnet 6 under the substrate 1
Most of the magnetic field lines from the pole to the S pole of the permanent magnet 9 embedded in the cap 5 pass near the magnetoelectric conversion element 3, so that even if the magnetic force of the permanent magnet 6 is reduced, the required magnetic flux density in the magnetoelectric conversion element portion is reduced. A secure and inexpensive permanent magnet can be used.

【0009】[0009]

【発明の効果】本発明によれば、容器蓋体に磁電変換素
子に対向する強磁性体の突起を埋込むことにより、容器
外の回路動作トリガ用の磁石より発する磁力線を透引し
て磁電変換素子部における磁束密度を高めることができ
る。これにより容器外へのコンセントレータの配置が不
要となり、トリガ用の永久磁石も小さくなるため、混成
集積回路装置全体の小型化、軽量化が可能になった。ま
た、トリガ用永久磁石も低コスト化できたが、この効果
は強磁性体を永久磁石にしたときに特に著しい。さら
に、磁力線の集中により、磁電変換素子の周辺部の磁界
が弱くなり、周辺部の回路部品への磁気的影響による誤
動作を防止することができた。この効果は、磁電変換素
子が他の半導体素子と共に一つのICチップに集積され
ているときに特に著しい。
According to the present invention, by embedding the protrusion of the ferromagnetic material facing the magnetoelectric conversion element in the container lid, the magnetic field lines emitted from the magnet for the circuit operation trigger outside the container are penetrated to obtain the magnetoelectric effect. The magnetic flux density in the conversion element section can be increased. As a result, the concentrator does not need to be arranged outside the container, and the permanent magnet for the trigger is also small, so that the hybrid integrated circuit device can be made compact and lightweight. Further, although the cost of the permanent magnet for trigger can be reduced, this effect is particularly remarkable when the ferromagnetic body is made into a permanent magnet. Further, due to the concentration of the lines of magnetic force, the magnetic field in the peripheral portion of the magnetoelectric conversion element is weakened, and malfunction due to magnetic influence on the peripheral circuit components can be prevented. This effect is particularly remarkable when the magnetoelectric conversion element is integrated with another semiconductor element in one IC chip.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の混成集積回路装置の断面図FIG. 1 is a sectional view of a hybrid integrated circuit device according to an embodiment of the present invention.

【図2】従来の混成集積回路装置の断面図FIG. 2 is a sectional view of a conventional hybrid integrated circuit device.

【図3】本発明の別の実施例の混成集積回路装置の一部
分を示す断面図
FIG. 3 is a sectional view showing a part of a hybrid integrated circuit device according to another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 基板 2 ICチップ 3 磁電変換素子 5 キャップ 6、9 永久磁石 7 接着剤 8 強磁性体 12 回路部品 1 Substrate 2 IC Chip 3 Magnetoelectric Converter 5 Cap 6, 9 Permanent Magnet 7 Adhesive 8 Ferromagnetic 12 Circuit Parts

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】磁電変換素子を含む半導体素子がそれぞれ
非磁性体よりなる基板と蓋体とよりなる容器内に収容さ
れ、容器外に永久磁石がその一つの極を基板をはさんで
磁電変換素子に対向させて配置される混成集積回路装置
において、磁電変換素子の前記永久磁石の極と反対側の
位置で蓋体に強磁性体よりなる突起が設置されたことを
特徴とする混成集積回路装置。
1. A semiconductor element including a magnetoelectric conversion element is housed in a container composed of a substrate made of a non-magnetic material and a lid, and a permanent magnet is provided outside the container with a magnetic pole interposed between the pole and the substrate. In the hybrid integrated circuit device arranged to face the element, a protrusion made of a ferromagnetic material is provided on the lid at a position opposite to the pole of the permanent magnet of the magnetoelectric conversion element. apparatus.
【請求項2】突起が磁電変換素子に向かって突出してい
る請求項1記載の混成集積回路装置。
2. The hybrid integrated circuit device according to claim 1, wherein the protrusion projects toward the magnetoelectric conversion element.
【請求項3】突起が永久磁石であり、先端が対向する容
器外の永久磁石の極と異なる極性を有する請求項1ある
いは2記載の混成集積回路装置。
3. The hybrid integrated circuit device according to claim 1, wherein the protrusion is a permanent magnet, and the tip of the protrusion has a polarity different from the pole of the opposing permanent magnet outside the container.
【請求項4】磁電変換素子が他の半導体素子と共に一つ
の半導体素体に集積された請求項1ないし3のいずれか
に記載の混成集積回路装置。
4. The hybrid integrated circuit device according to claim 1, wherein the magnetoelectric conversion element is integrated with another semiconductor element in one semiconductor element body.
JP7922995A 1995-04-05 1995-04-05 Hybrid integrated circuit device Withdrawn JPH08279326A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7922995A JPH08279326A (en) 1995-04-05 1995-04-05 Hybrid integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7922995A JPH08279326A (en) 1995-04-05 1995-04-05 Hybrid integrated circuit device

Publications (1)

Publication Number Publication Date
JPH08279326A true JPH08279326A (en) 1996-10-22

Family

ID=13684073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7922995A Withdrawn JPH08279326A (en) 1995-04-05 1995-04-05 Hybrid integrated circuit device

Country Status (1)

Country Link
JP (1) JPH08279326A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7414398B2 (en) 2006-03-30 2008-08-19 Alps Electric Co., Ltd Magnetic detection device having magnetic detection element in magnetic detection circuit and fabricating method thereof
US10145906B2 (en) 2015-12-17 2018-12-04 Analog Devices Global Devices, systems and methods including magnetic structures
US10551215B2 (en) 2015-06-11 2020-02-04 Analog Devices Global Unlimited Company Systems, circuits and methods for determining a position of a movable object

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7414398B2 (en) 2006-03-30 2008-08-19 Alps Electric Co., Ltd Magnetic detection device having magnetic detection element in magnetic detection circuit and fabricating method thereof
US10551215B2 (en) 2015-06-11 2020-02-04 Analog Devices Global Unlimited Company Systems, circuits and methods for determining a position of a movable object
US10145906B2 (en) 2015-12-17 2018-12-04 Analog Devices Global Devices, systems and methods including magnetic structures
US10429456B2 (en) 2015-12-17 2019-10-01 Analog Devices Global Modules and methods including magnetic sensing structures
US11061086B2 (en) 2015-12-17 2021-07-13 Analog Devices Global Magnetic device with magnetic structure and micro-fluidic structure
US11649157B2 (en) 2015-12-17 2023-05-16 Analog Devices International Unlimited Company Devices, systems and methods including magnetic structures and micromechanical structure

Similar Documents

Publication Publication Date Title
US5883567A (en) Packaged integrated circuit with magnetic flux concentrator
EP1575054B1 (en) Magnetic shield member, magnetic shield structure, and magnetic memory device
US4188605A (en) Encapsulated Hall effect device
US4066962A (en) Metal detecting device with magnetically influenced Hall effect sensor
US7318283B2 (en) Inclination sensor
JP3603406B2 (en) Magnetic detection sensor and method of manufacturing the same
EP0662667A2 (en) Magnetic sensor with member having magnetic contour anisotropy
DE50311337D1 (en) ELECTROMAGNETIC CONTINUITY SYSTEM OF A SAFETY SWITCH
US6040688A (en) Electrical current supply device with incorporated electrical current sensor
US5554964A (en) Microswitch with a magnetic field sensor
WO2016013650A1 (en) Magnetic sensor device
JP3086563B2 (en) Rotation angle sensor
JPH08279326A (en) Hybrid integrated circuit device
JP2002286822A (en) Magnetic sensor
JP3961809B2 (en) Magnetic sensor element
JPH01240867A (en) Current detector
JP4220790B2 (en) Magnetic detector
JPH1114301A (en) Detection device and cylinder device using the same
JP2004257953A (en) Electric current sensor device
JP3543309B2 (en) Current detector
JP4194098B2 (en) Proximity switch mechanism
JPS59223026A (en) Magnetic proximity switch
JPH01299481A (en) Magnetism detecting apparatus
JP3179417B2 (en) Ferromagnetic object passage sensor
US20040251506A1 (en) Hall effect devices, memory devices, and hall effect device readout voltage increasing methods

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20031225

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040319

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040323

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20040524