JPH08278457A - M multiplied by n pieces of thin-film actuated mirror arrays and their manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film actuated mirror array which can properly reflect and adjust coming light beam even in the case of severe temperature alteration and provide a manufacturing method. SOLUTION: Arrays include an active matrix, M×N of arrays, supporting part 222 and M×N of arrays having driving structure and this structure of the arrays comprises a driving part 290 and a light reflecting part 295 and consists of a first thin film electrode, a thin film sacrifice part, a second thin film electrode, an elastic part, an insulating part, a temperature compensating part, and a conduit 226. The manufacturing method is carried out by preparing an active matrix 210, forming the thin film sacrificing layer 224, forming arrays of hollow slots, forming the supporting part 222 and the temperature compensating layer 285, selectively removing the temperature compensating layer 285, forming the elastic layer 235, forming the conduit 226, forming the second thin film layer 245 and a deformable layer 255, patterning these layers, forming the first thin film layer 265, selectively removing the first thin film layer 265, forming an insulating part 275, patterning the part, and removing the thin film sacrificing layer 224.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION This invention relates to optical projection systems, and more particularly to an array of M × N thin film actuated mirrors for an optical projection system and an improved fabrication method thereof.

[0002]

2. Description of the Related Art Among various conventional video display systems,
It is known that an optical projection system can display a high quality image on a large screen. In such a light projection system, the light emitted from the lamp is, for example, uniformly distributed on an array of M × N actuated mirrors (hereinafter referred to as M × N actuated mirror array). Is irradiated. Here, each mirror is connected to each actuator. The actuator is made of an electrically deformable substance such as a piezoelectric material or an electrostrictive material that mechanically deforms in response to an applied electric field.

The light beam reflected from each mirror (hereinafter,
The reflected light beam) is incident on the aperture of the light baffle, for example. By supplying an electrical signal to each actuator, the relative position of each mirror with respect to the incident light beam is changed, thereby deflecting the optical path of the reflected light beam from each mirror. When the optical path of each reflected light beam is deflected, the amount of light reflected from each mirror and passing through the aperture changes, thus adjusting the light intensity. The light beam whose light amount is adjusted through the aperture is projected onto a projection screen through an appropriate optical device such as a projection lens, and an image is displayed on the screen.

1A to 1G, an array 1 including M × N thin film actuated mirrors 101 is shown.
00 has been described. Where M and N
Is a positive integer. This method is described in "THIN FILM ACTUATEDM" in co-pending U.S. patent application Ser. No. 08 / 430,628.
"IRRR ARRAY".

As shown in FIG. 1, the manufacturing process of the array 100 includes a substrate 12, an array of M × N transistors (not shown), and an array of M × N connection terminals 14 on the upper surface. Starting with the formation of an active matrix 10 having

Next, as shown in FIG. 1A, a thin film sacrificial layer 24 is formed on the upper surface of the active matrix 10. Here, when the thin film sacrificial layer 24 is made of metal, a sputtering method or The vacuum deposition method was applied to phosphor-silicate glass:
When it is made of PSG, it is formed by a spin coating method or a chemical vapor deposition (CVD) method, and when it is made of polysilicon, it is formed by a chemical vapor deposition method.

Next, as shown in FIG. 1A, a support layer 20 including an array of M × N support portions 22 surrounded by a thin film sacrificial layer 24 is formed. This first support layer 20
Is a process of forming an array of M × N empty slots (not shown) located around each connection terminal 14 on the thin film sacrificial layer 24 by using a photolithography method, and a process of forming an array around each connection terminal 14. The supporting portion 22 made of an insulating material is formed in each of the vacant slots positioned by a sputtering method or a CVD method.

Next, an elastic layer 30 made of an insulating material, such as the supporting portion 22, is formed on the supporting layer 20 by using a sol-gel method, a sputtering method, or a CVD method.

Next, as shown in FIG. 1B, a conduit 26 made of metal is formed on each support portion 22. First, the conduit 26 is made to extend from the upper portion of the elastic layer 30 to the upper portion of each connection terminal 14 by an etching method M.
It is formed by forming an array of × N holes (not shown) and filling the holes with metal.

Next, the second thin film layer 40 made of a conductive material.
Are formed on the elastic layer 30 including the conduit 26 by using a sputtering method. The second thin film layer 40 is electrically connected to each transistor through the conduit 26 formed in the support portion 22.

Next, as shown in FIG. 1C, for example, PZT (lead zirconium tit)
an electrically deformable thin film layer (hereinafter referred to as a deformable layer) 50 made of a piezoelectric material such as an anate) is formed on the second thin film layer 40 by a sol-gel method, a sputtering method,
Alternatively, it is formed by using the CVD method.

Next, the electrically deformable thin film layer 50, the second thin film layer 40, and the elastic layer 30 are arranged in an array of M × N deformable portions 55, and M × N second thin film electrodes 45. 1D, the M × N elastic portions 35 are patterned by photolithography or laser cutting until the M × N supporting layers 20 are exposed, as shown in FIG. 1D. To be done. Each second thin film electrode 45 has a corresponding support portion 22.
The thin film actuated mirror array 101 is electrically connected to each transistor through each of the conduits 26 formed in the above, and functions as a signal electrode.

Next, each deformable portion 55 is, for example, PZ.
A heat treatment at a high temperature of about 650 ° C. to form a substance such as T causes a phase transition. Thus, an array of M × N heat-treated structures (not shown) will be formed. Since each of the heat-deformed electrically deformable portions 55 is sufficiently thin, if it is made of a piezoelectric material, it can be polarized by an electric signal applied when the thin film actuated mirror 101 is driven, so that no additional polarization is necessary.

Next, M consisting of a conductive and light-reflecting material
An array of × N first thin film electrodes 65 is formed on the upper side of the electrically deformable portion 55 using a sputtering method,
As shown in FIG. 1E, the first thin film electrode 65 has conductivity and light reflection so as to completely cover the upper portion of the array of M × N heat-treated structures including the exposed support layer 20. After the layer 60 made of a substance having a property is formed by a sputtering method, the layer 60 is selectively removed by an etching method. In this way, as shown in FIG. 1F, an array 110 of M × N actuated mirror structures 111 is formed. The actuated mirror structure 111 has a top surface and four side surfaces. Each first thin film electrode 65 acts as a mirror as well as a bias electrode in the actuated mirror 101.

Next, each actuated mirror structure 1
The top surface and four sides of 11 are completely surrounded by a thin film protection layer (not shown). Thin film sacrificial layer 2 formed on support layer 20
4 is removed by an etching method. After the thin film protective layer is removed, an array 100 of M × N thin film actuated mirrors 101 is formed, as shown in FIG.

However, the method described above for making an array 100 of M × N thin film actuated mirrors 101 has many problems. The biggest problem among them is the light efficiency due to the difference in the coefficient of thermal expansion of the thin film layers forming each thin film actuated mirror 101.
For example, when the ambient temperature of the array 100 changes, the degree of expansion or contraction of each thin film layer forming each thin film actuated mirror 101 becomes different, which makes it difficult to appropriately reflect and adjust the incident light beam. Therefore, there is a disadvantage that the structural characteristics of each thin film actuated mirror 101 are affected and the light efficiency of the array 100 is reduced.

[0017]

SUMMARY OF THE INVENTION Accordingly, the main object of the present invention is to provide an M × for an optical projection system capable of appropriately reflecting and adjusting an incident light beam even when a rapid temperature change occurs.
Providing N thin film actuated mirror arrays. Another object of the present invention is to provide a method of manufacturing M × N thin film actuated mirror arrays.

[0018]

To achieve the above object, according to one embodiment of the present invention, there is provided an M × N thin film actuated mirror array for use in an optical projection system, each of which comprises: An active matrix including an array of M × N connection terminals (where M and N are integers) each electrically connected to each corresponding transistor, and a substrate having an array of M × N transistors; An array of M × N supporting portions, and a first thin film electrode, an electrically deformable thin film portion, a second thin film electrode, an elastic portion, an insulating portion, which is supported by the supporting portions on the substrate in a cantilever structure. A temperature compensating part and a conduit, the first thin film electrode and the second thin film electrode are respectively located above and below the electrically deformable thin film part, and the elastic part is below the second thin film electrode. Located at the temperature compensation unit Located under the elastic part, the driving structure is divided into a driving part and a reflecting part, and the driving part is a front part of the first thin film electrode functioning as a bias electrode and a mirror, the electrically deformable part. A thin film part, a second thin film electrode electrically connected to the connection terminal through a conduit and functioning as a signal electrode, a front part of the elastic part and a part of the temperature compensation part, and the light reflective part is The remaining portion of the first thin film electrode that functions as a mirror, the remaining portion of the elastic portion, and the remaining portion of the temperature compensation portion, wherein the insulating portion is the front portion and the remaining portion of the first thin film electrode. And an array of M × N drive structures defining the drive portion and the reflective portion by electrically isolating.

According to another embodiment of the present invention, an array of M × N connecting terminals and an array of M × N are used in manufacturing an M × N thin film actuated mirror array for use in an optical projection system. A first step of preparing an active matrix including a substrate having an array of transistors, a second step of forming a thin film sacrificial layer on the active matrix, and the thin film so as to be located on the connection terminal. Third, forming an array of M × N empty slots in the sacrificial layer
A process, a fourth process of forming a support in each of the empty slots, a fifth process of forming a temperature compensation layer on the thin film sacrificial layer including the support, and a process of forming a temperature compensation layer on the support. A sixth step of selectively removing the temperature compensation layer, and a seventh step of forming an elastic layer on the support layer and the temperature layer.
An eighth step of forming a conduit extending from the surface of the elastic layer to an upper portion of the connection terminal on each support portion, a second thin film layer and an electrically deformable layer on the conduit and the elastic layer. A ninth step of forming a possible thin film layer,
The electrically deformable layer and the second thin film electrode are supported on the substrate in a cantilever structure by the supporting portions, and
Patterning an array of M × N electrically deformable thin film layers and an array of M × N second thin film electrodes so that the thin film electrodes are electrically connected to the conduit and the connection terminal, respectively; A second electrically deformable portion and a second portion
A tenth step in which the thin film electrode has a side surface, and the elastic layer including the electrically deformable portion and the side surface of the second thin film electrode and the first portion on the electrically deformable portion. An eleventh step of forming a thin film layer, and a step of separating the first thin film layer by removing each electrically deformable portion and a portion of the first thin film layer formed on one side surface of the second thin film electrode. Twelve steps, thirteenth step of forming an insulating part on each removed portion of the first thin film layer, and M × N first electrodes of the first thin film layer, the elastic layer, and the temperature compensation layer. , An array of M × N elastic parts and an array of M × N temperature compensating parts to expose the thin film sacrificial layer, and each insulating part exposes the first thin film electrode to the front part and The fourteenth step of dividing into the remaining part, and removing the thin film sacrificial layer, And a fifteenth step of completing the array of pieces of thin film actuated mirrors.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will now be described in more detail with reference to the drawings. 2 and 3A-3G show cross-sectional views of an array 300 of M.times.N thin film actuated mirrors 301 used in a light projection system according to a preferred embodiment of the present invention. Has been done. Here, M and N are positive integers. It should be noted that the same members shown in FIGS. 2 and 3A to 3G are designated by the same reference numerals.

FIG. 2 illustrates an array 300 of M × N thin film actuated mirrors 310 according to one embodiment of the invention.
FIG. The array 300 comprises an active matrix 210, an array of M × N supports 222 and M × N.
An array of individual drive structures 200 is included.

The active matrix 210 includes a substrate 212 having an array of M × N connection terminals 214 and an array of M × N transistors (not shown). Each connection terminal 214 is electrically connected to the corresponding transistor of the transistor array.

Each support 222 is made of an insulating material such as silicon nitride and is formed around the upper portion of the connection terminal 214.

Each driving structure 200 is supported on the substrate 212 in a cantilever structure by each supporting portion 222, and the first thin film electrode 26
5, deformable part 255, second thin film electrode 245, elastic part 2
35, an insulating part 275, a temperature compensating part 285 and a conduit 226. The first and second electrodes 265 and 245 are formed above and below each deformable portion 255. The elastic portion 235 is formed below the second thin film electrode 245. The temperature compensation part 285 is located below the elastic part 235.

Each drive structure 200 comprises a drive portion 290 and a light reflecting portion 295. The driving portion 290 of each driving structure 200 is electrically connected to the connection terminal 214 through the front portion of the first thin film electrode 265, which functions as a bias electrode and a mirror in each driving structure 200, the deformable portion 255, and the conduit 226, and The second thin film electrode 245 that functions as an electrode, the front portion of the elastic portion 235, and the temperature compensation portion 2
Includes a portion of 85. Light-reflecting portion 2 of each drive structure 200
Reference numeral 95 denotes the remaining portion of the first thin film electrode 265 that functions as a mirror, the remaining portion of the elastic portion 235, and the temperature compensation portion 2.
Includes the rest of 85. Each insulating part 275 electrically separates the front part of the first thin film electrode 265 and the remaining part in each driving structure 200 to define a driving part 290 and a light reflecting part 295.

Each temperature compensator 285 includes a first thin film electrode 26.
5 is made of a material having a coefficient of thermal expansion almost the same as that of the material that functions as a mirror. Each temperature compensator 2
85 may maintain the physical properties of each drive structure 200 even if there is a severe temperature change in each thin film actuated mirror 301. In addition, each temperature compensator 285 has a second
It may be made of the same material as the thin film electrode 245.

Further, since each driving structure 200 is divided into the driving portion 290 and the light reflecting portion 295 by the insulating portion 275, the light reflecting portion 295 of each driving structure 200 is balanced when the thin film actuated mirror 301 is driven. Maintaining the optical efficiency of the array 300 increases.

It should be noted that the second thin film electrode 245 is made of a material having electrical conductivity and light reflectivity, and that the method of manufacturing the array 30 may be changed accordingly.
3 (A) to 3 (G) are sectional views showing a sequential manufacturing process of the array 300 of M × N thin film actuated mirrors 301 shown in FIG.

The fabrication process for this array 300 begins with the formation of an active matrix 210 including a substrate 212 having an array of M × N transistors (not shown) and an array of M × N connection terminals 214. Here, each connection terminal 214 is electrically connected to each corresponding transistor in the transistor array. After that, copper (C
u) or a metal such as nickel (Ni), a thin film sacrificial layer 224 made of PSG or polysilicon is formed on the upper surface of the active matrix 210 to a thickness of 0.1 to 2 μm. When the thin film sacrificial layer 224 is made of metal, a sputtering method or a chemical vapor deposition (CVD) method is used.
It is formed on the active matrix 210 by using a spin coating method when it is made of SG and a chemical vapor deposition (CVD) method when it is made of polysilicon.

Next, as shown in FIG. 2, an array of M × N empty slots is formed in the thin film sacrificial layer 224 by photolithography. Each empty slot is located above the connection terminal 214. Then, sputtering or CV
Using the D method, the support portion 222 is formed in each empty slot. Each of the support portions 222 is made of an insulating material such as silicon nitride. Next, it is made of the same material as the material of the first thin film electrode 265 functioning as a mirror or made of a material such as aluminum or gold having substantially the same coefficient of thermal expansion, and has substantially the same thickness as the first thin film electrode 265. A temperature compensation layer 280 is formed on the thin film sacrificial layer 224 including the support 222 by using a sputtering method or a vacuum deposition method.

Next, as shown in FIG. 3A, the portion of the temperature compensation layer 280 formed on the upper portion of each support portion 222 is
It is removed using a photolithography method or a laser cutting method. Then, an elastic layer 230 of the same material as the supporting part 222 and having a thickness of 0.1 to 2 μm is formed on the supporting part 22 and the temperature compensation layer 280 using a vacuum deposition method or a sputtering method.

Next, as shown in FIG. 3B, a conduit 226 made of a metal such as aluminum and functioning as an electrical connecting member is formed on each support 222. Each of the conduits 226 is formed by first using an etching method to form an array of M × N holes (not shown) in which each hole extends from the upper part of the elastic layer 230 to the upper part of the connection terminal 214, and sputtering. And filling the inside of the hole with a metal by using the method. Then, a second thin film layer (not shown) made of a conductive material such as platinum (Pt) or platinum / titanium (Pt / Ti) is formed in a thickness of 0.1 to 2 μm by a sputtering method or a vacuum deposition method. With elastic layer 2
30 and the upper portion of the conduit 226. P
A deformable layer (not shown) made of a piezoelectric material such as ZT or an electrostrictive material such as PMN is deposited on the second thin film layer to a thickness of 0.1 to 2 μm by using a vapor deposition method or a sputtering method. Is formed. The deformable layer is then heat treated to cause a phase transition.

Next, as shown in FIG. 3C, the deformable layer and the second thin film electrode are supported by the deformable portion 255 and the second thin film electrode 245 above the supporting portion 22, respectively. The thin film electrode 245 is electrically connected to the conduit 226 and the connection terminal 214 by photolithography or laser cutting so that M × N deformable portions 25 can be formed.
5 and an array of M × N second thin film electrodes 245 are patterned. Each deformable portion 255 and the second thin film electrode 245 has a side surface. Since each electrically deformable portion 255 is sufficiently thin, if it is made of a piezoelectric material, it can be polarized by an electric signal applied when the thin film actuated mirror 301 is driven, so that it is not particularly necessary to polarize it.

Then, as shown in FIG. 3D, the first thin film layer 260 of 0.1 to 2 μm made of a conductive material such as aluminum (Al) or silver (Ag) is formed by the sputtering method or the vacuum deposition method. Each deformable part 255
And the deformable portion 255 including the side surface of the second thin film electrode 245.
And formed on the elastic layer 230. After that, the deformable portion 255 and the first thin film layer 260 formed on one sidewall of the second thin film electrode 245 are removed by using a photolithography method or a laser cutting method, so that the first thin film is formed. Layer 260 will be divided into a driving portion and a light reflecting portion.

Next, as shown in FIG. 3E, the insulating portion 275 made of an insulating material is formed on each removed portion of the first thin film layer 260 by using the vapor deposition method or the sputtering method. The insulating portion 275 includes the support portion 222 and the elastic layer 230.
It is made of a substance like Then, as shown in FIG. 3F, the first thin film layer 260, the elastic layer 230, and the compensation layer 280 are formed by photolithography or laser cutting to form M × N first thin film electrodes 265. The thin film sacrificial layer 224 is exposed by patterning an array of M × N elastic portions 235 and an array of M × N temperature compensating portions 285. Each insulation part 275
Defines the front portion and the remaining portion of the first thin film electrode 265.

Finally, as shown in FIG. 3G, the thin film sacrificial layer 224 is removed by an etching method, so that M × N thin film actuated mirrors 3 are formed.
The array 30 of 01 will be completed. Although specific embodiments of the present invention have been described above, it will be apparent to those skilled in the art that various modifications can be made without departing from the scope of the claims of the present invention.

[0037]

Therefore, according to the present invention, each temperature compensator is made of a material having the same coefficient of thermal expansion as the first thin film electrode that functions as a mirror and also as an electrode. The physical characteristics of each drive structure can be maintained at the best even when a temperature change occurs in the Ted mirror array. Furthermore, each drive structure is divided into a drive part and a reflection part, so that when the array is driven. , The light-reflecting portion will maintain balance, which can increase the light efficiency of the array.

[Brief description of drawings]

1A to 1G are cross-sectional views illustrating a method of manufacturing a conventional M × N thin film actuated mirror array.

FIG. 2 is a schematic cross-sectional view illustrating a method for manufacturing an M × N thin film actuated mirror array according to the present invention.

3A to 3G are cross-sectional views illustrating a method of manufacturing the M × N thin film actuated mirror array shown in FIG.

[Explanation of symbols]

 200 Driving Structure 210 Active Matrix 212 Substrate 214 Connection Terminal 222 Support Part 224 Thin Film Sacrificial Layer 226 Conduit 230 Elastic Layer 235 Elastic Part 240 Second Thin Film Layer 245 Second Thin Film Electrode 250 Deformable Layer 255 Electrically Deformable Part 260 1 thin film layer 265 1st thin film electrode 260 1st thin film layer 265 1st thin film electrode 275 insulating part 280 temperature compensating part 285 temperature compensating part 290 driving part 295 light reflecting part 301 thin film actuated mirror array

Claims (13)

[Claims] 1. An M × N thin film actuated mirror array for use in an optical projection system, wherein each connection terminal has M × N connection terminals electrically connected to each corresponding transistor. An array (where M and N are integers) and an active matrix including a substrate having an array of M × N transistors; an array of M × N supports; and a cantilever structure on the substrate by each of the supports. The first thin film electrode is supported and has an electrically deformable thin film part, a second thin film electrode, an elastic part, an insulating part, a temperature compensating part and a conduit. Located above and below the elastically deformable thin film part, the elastic part is located under the second thin film electrode, the temperature compensating part is located under the elastic part, and the driving structure is driven. Divided into parts and reflective parts The driving portion is electrically connected to the connection terminal via a front portion of the first thin film electrode functioning as a bias electrode and a mirror, the electrically deformable thin film portion, and a conduit to serve as a signal electrode. The second thin film electrode having the function of, the front part of the elastic part and a part of the temperature compensating part, and the part having the light reflectivity is the remaining part of the first thin film electrode functioning as a mirror, the elastic part. And a remaining part of the temperature compensating part, the insulating part electrically separates the front part and the remaining part of the first thin film electrode to separate the driving part and the reflecting part. An array of M × N thin film actuated mirrors, comprising: an array of M × N drive structures defined. 2. The M × N thin film actuated mirror array according to claim 1, wherein the first thin film electrode is made of a material having conductivity and light reflectivity. 3. The M × N thin film actuated mirror array according to claim 1, wherein the second thin film electrode is made of a conductive material. 4. The thin film actuated mirror array of M × N pieces according to claim 1, wherein each of the temperature compensators is made of a material having the same coefficient of thermal expansion as the first thin film electrode. . 5. The M × N thin film actuated mirror array according to claim 1, wherein each of the temperature compensators is made of a material such as the first thin film electrode. 6. The thin film actuated mirror of M.times.N according to claim 1, wherein each of the temperature compensators is made of a material having a thermal expansion coefficient substantially the same as that of the second thin film electrode. array. 7. The M according to claim 1, wherein each of the temperature compensators is made of a material such as a second thin film electrode.
× N thin film actuated mirror array. 8. The M × N thin film actuated mirror according to claim 1, wherein the first thin film electrode and the second thin film electrode are made of a material having conductivity and light reflectivity. array. 9. A substrate having an array of M × N connection terminals and an array of M × N transistors for manufacturing an M × N thin film actuated mirror array for use in an optical projection system. A first step of preparing an active matrix including the second step, a second step of forming a thin film sacrificial layer on the active matrix, and M × N empty spaces in the thin film sacrificial layer so as to be located on the connection terminals. A third step of forming an array of slots, a fourth step of forming a support in each of the empty slots, a fifth step of forming a temperature compensation layer on the thin film sacrificial layer including the support, and A sixth step of selectively removing the temperature compensation layer formed on each support, a seventh step of forming an elastic layer on the support layer and the temperature layer, and a surface of the elastic layer. The connection terminal An eighth step of forming a conduit extending on the support part on each support part, a ninth step of sequentially forming a second thin film layer and an electrically deformable thin film layer on the conduit and the elastic layer, and The deformable layer and the second thin film electrode are supported on the substrate in a cantilever structure by each supporting portion, and
Patterning an array of M × N electrically deformable thin film layers and an array of M × N second thin film electrodes so that the thin film electrodes are electrically connected to the conduit and the connection terminal, respectively; A second electrically deformable portion and a second portion
A tenth step of making the thin film electrode have a side surface, and the first step on the elastic layer and the electrically deformable portion including the electrically deformable portions and the side surfaces of the second thin film electrode. An eleventh step of forming a thin film layer, and a twelfth step of separating the first thin film layer by removing the electrically deformable portion and a portion of the first thin film layer formed on one side surface of the second thin film electrode. A thirteenth step of forming an insulating part on each removed portion of the first thin film layer, and a first thin film layer, an elastic layer, and a temperature compensation layer of M × N first electrodes, respectively. The thin film sacrificial layer is exposed by patterning an array, an array of M × N elastic parts, and an array of M × N temperature compensating parts, and each insulating part exposes the first thin film electrode to the front part and the remaining part. 14th step of dividing the thin film sacrifice layer into A fifteenth step of completing an array of N thin film actuated mirrors, the method for manufacturing an M × N thin film actuated mirror array. 10. The method of claim 9, wherein the first thin film layer is made of a material having conductivity and light reflectivity. 11. The method of manufacturing an M × N thin film actuated mirror array according to claim 9, wherein the second thin film layer is made of a conductive material. 12. The M × N thin film actuated mirror array according to claim 9, wherein each of the temperature compensation layers is made of a material having a thermal expansion coefficient substantially the same as that of the first thin film electrode. Manufacturing method. 13. The method of claim 9, wherein each of the temperature compensation layers is made of the same material as the first thin film electrode.