JPH08271418A - Infrared gas analyzer and cvd system - Google Patents

Abstract

PURPOSE: To provide an infrared gas analyzer in which abnormal situation can be avoided by hermetically sealing the space for an infrared light source or an infrared detector using a retainer plate through which lead wires in a tubular body are passed while being sealed hermetically. CONSTITUTION: A cell block 1 is provided with a gas channel 1a and through holes 1b, 1c reaching the channel 1a at a predetermined angle (right angle) are made in the central part of the cell block 1. Tubular bodies 2, 3 are fitted in the holes and secured to the cell block 1 by means of screws. Double seal structure is employed for the channel 1a and the inner spaces 2g, 3g of the tubular bodies 2, 3 for receiving a light source 7 and a detector 8 so that poison gas or the like does not leak to the inner space or to the outside. Lead wires 11 for light source disposed in the space 2g of the tubular body 2 are passed through the retainer plate 5 and the gaps are sealed with fused glass. Similarly, lead wires 14 are passed through the retainer plate 6 of the other tubular body 3 and the gaps are also sealed with fused glass.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention can be installed in the middle of a pipeline (inline) for supplying vapors of liquid and solid metal compounds or various special material gases for semiconductors to a semiconductor manufacturing apparatus, and for each component. Infrared gas analyzer capable of measuring and controlling gas concentration or flow rate and CVD (Chemical Vapor Deposition) using the infrared gas analyzer
, Hereinafter referred to as CVD) apparatus.

[0002]

2. Description of the Related Art Silicon wafers in semiconductor manufacturing equipment
In the steps such as thin film formation on the c, oxidation and etching treatment, a predetermined treatment is performed using a special material gas for semiconductor. Various special material gases for semiconductors, such as monosilane (SiH ₄ ), phosphine (PH ₃ ), arsine (AsH ₃ ), etc., are filled in a gas cylinder and mixed with a predetermined component gas and each component concentration at a predetermined flow rate. Supplied to semiconductor manufacturing equipment. Among such special material gases for semiconductors, extremely toxic ones and flammable ones are used, and the concentration and flow rate of the mixed components are controlled by the gas supply device.

As a gas supply device equipped with a means for measuring the type and concentration of a special material gas for semiconductors in a gas cylinder, a sampling pipe is provided in a part of a gas pipe system of a semiconductor manufacturing device or a gas cylinder storage box. There is an apparatus provided with an infrared gas analyzer having a short path cell as shown in FIG. This infrared gas analyzer is equipped with a space cell 41
The O-ring 44 is formed by fitting the to-cell 42 into the space 43.
The gas is introduced through the inflow pipe 45 provided in the short cell 42, passed through the space 43, and exhausted through the exhaust pipe 46.
A light source is arranged on one side of the space cell 41, and a detector is arranged on the side of the short cell 42.
Measure and analyze the type and concentration of the gas passing through. In this case, the space 41a of the space cell 42 contains nitrogen gas (N
₂ ) or zero gas such as argon gas (Ar) is filled,
In addition, these space cells 41 and short cells 42
Are provided with cell windows 47 and 48 through which infrared rays pass.

In recent years, ferroelectric thin films and high-dielectric-constant paraelectric films have come to be used as next-generation ultra-high-integrated memory devices, and sputtering methods, sol-gel methods, and MOD (Metalorganic) are used as film forming methods. Decomposition) method, CVD
The MOCVD method, which is a kind of the CVD method, has attracted attention because of its high deposition rate, little damage, easy composition control, and the like. This CVD method is a method of spraying an organometallic raw material gas onto a substrate and chemically reacting on the substrate to form a thin film. The apparatus configuration is such that a liquid or solid metal compound as a starting raw material is enclosed in a stainless steel container or the like, A method is used in which this is kept at a constant temperature in a constant temperature bath or the like to generate a vapor gas, and the vapor gas is supplied to the reaction chamber by a carrier gas such as an inert gas. In this case, the flow rate of the carrier gas is controlled by the mass flow controller.

[0005]

In a gas supply device equipped with a conventional infrared gas analyzer for measuring the type, concentration, etc. of a special material gas for semiconductors in a gas cylinder, a short optical path cell is arranged directly in a gas supply line. However, it is arranged by providing a bypass line in the piping system, and the check mechanism of safety and monitor items (component, concentration, flow rate, etc.) is incomplete. That is, since the seal and the rubber O-ring are used for the seal portion, the airtightness is low, and
Since there is no detection mechanism related to the gas leak to the detector itself, there is a drawback that when a leak occurs, the gas flows out to the surroundings of the detector, and when it leaks, it cannot be dealt with. Further, the conventional apparatus has a problem that a post operation is complicated because a purge operation and a detoxification process are required because a "reservoir part" is formed in the gas flow path.

Further, PLZT ((P
b, La) (Zr, Ti) O ₃ ) When preparing a composite metal oxide such as a ferroelectric thin film, in order to make the composition ratio stoichiometric, the amount of vapor gas from each starting material is adjusted. As a control method, the temperature of each starting material container and the carrier gas flow rate are appropriately selected. However, many starting materials, which are organic metals such as liquids and solids, have a problem in stability of vapor pressure, and it is difficult to send a stable vapor gas into the reaction chamber with good reproducibility. Further, since it is not possible to observe the inside of the container in order to confirm the amount of the raw material sealed in the container, it is necessary to conduct composition analysis, film thickness measurement, etc. after forming a thin film or the like and examine it. Further, the liquid raw material is often subjected to bubbling or the like, and in this case, there is a problem that the amount of vapor gas changes due to the decrease in amount of liquid.

The present invention has been made in view of the above-mentioned problems, and it is possible to measure the gas component, the concentration, the flow rate, etc. by installing it in the middle of the gas supply pipeline (in-line) because of its high airtightness. Even if an abnormality occurs in the gas component, concentration, flow rate, etc., or a gas leak occurs inside the detector, it can be immediately detected and the abnormal situation can be avoided. The purpose is to provide a total. Further, according to the present invention, the vapor gas amount can be arbitrarily controlled by controlling the gas flow rate and the container temperature, and the composition ratio of a multi-element compound such as PLZT or PZT such as a complex metal oxide can be stably reproduced. It is an object of the present invention to provide a CVD apparatus capable of accurately forming a film.

[0008]

SUMMARY OF THE INVENTION In order to solve the above problems, the present invention provides an infrared gas analyzer in which a gas flow path is provided in a cell block and the gas flow path is at a right angle or a predetermined angle in both directions. A cylindrical body having a through hole formed therein, a cell window fixed at the end, and a space for arranging a light source or a detector inside the cell window is provided in the gas flow path so that the cell window has a predetermined measurement cell length. It is fitted from both sides of the hole so as to face each other, and the infrared ray source or infrared ray detector for the infrared ray detector or infrared ray detector is provided with a pressing plate through which a lead wire for the infrared ray source or infrared ray detector in the cylindrical body is hermetically sealed. The feature is that the space is sealed.

Further, a gas leak detecting space is provided between the cell window provided at the end of the cylindrical body and the space in which the light source or the detector is arranged to detect an abnormal increase in the signal during the leak. It is characterized in that it is provided with a means for doing.

Furthermore, a flange is formed at the end of the cylinder opposite to the cell window, and a pressing plate for sealing the space for the infrared light source or the infrared detector is fixed to the flange, and the flange is mechanical O-ring. And is fixed to the cell block.

Further, the CDV apparatus comprises a reaction chamber in which a substrate for forming a thin film is placed, a gas mixing chamber connected to the reaction chamber by a pipe, a raw material for film formation is filled, and the mixing chamber is connected by a pipe. For example, a constant temperature bath containing the connected containers, an infrared gas analyzer installed in a pipe connecting the gas mixing chambers with the containers stored in the constant temperature baths, and a carrier gas supplied to the mixing chambers, for example. A gas supply device such as a gas cylinder, each container filled with the raw material and a gas supply device such as a gas cylinder for supplying a carrier gas to each of these containers, the mixing chamber and the conduit of the gas supply device, and the raw material A mass flow controller installed in the conduit between each container filled with a substance and a gas supply device, and detection of the concentration of each gas component from the infrared gas analyzer or the flow rate from the mass flow controller signal More the temperature of the thermostatic chamber and the respective mass flow - control - to a control device for controlling a gas flow rate of La, comprising the.

Alternatively, the infrared gas analyzer of the CVD apparatus as the above means is or is the infrared gas analyzer of the above means.

When the infrared gas analyzer is any of the above-mentioned means, since the airtightness can be enhanced, it can be installed as an in-line gas monitor in the pipeline for actually supplying the gas. This infrared gas analyzer, for example, is connected to a control device for a semiconductor gas supply device to transmit measured and analyzed information, and to immediately stop the gas supply from the semiconductor gas supply device when an abnormality occurs. Can be used. In particular, by the means, even when a gas leak occurs in the infrared gas analyzer itself, it is possible to detect the gas leak and stop the gas supply.

When a CVD apparatus is used as another means, the amount of vapor gas as a starting material can be stably supplied into the reaction chamber when the ferroelectric thin film is formed. This makes it possible to form a ferroelectric thin film having uniform characteristics with good reproducibility.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Specific embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing the structure of a CVD apparatus according to the present invention.
((Pb, La) (Zr, Ti) O ₃ ), simply PL
It is a figure which shows the case where a ferroelectric thin film (ZT) is produced. However, this diagram is a diagram in the case of La = 0, that is, in the case of producing PZT, and although not shown in the case of PLZT, a container for supplying La, a constant temperature bath and piping are further required. This CVD apparatus includes a reaction chamber 21 in which a substrate is installed,
Gas mixing chamber 22 and container 2 filled with raw material described later
Constant temperature baths 26, 27, 28 containing 3, 24, 25,
Pipe line 31 connecting the reaction chamber 21 and the gas mixing chamber 22
And a pipe line 32 connecting the gas mixing chamber 22 and the containers 23, 24, 25 filled with the above-mentioned or later-described raw material.
33, 34, a cylinder of a gas supply device (not shown) filled with an inert gas such as argon as a carrier gas, containers 23, 24, 25 filled with the raw material and an inert gas as a carrier gas, for example, a gas filled with argon Pipe lines 35, 36, 37 connecting the cylinders of the supply device, and the infrared gas analyzer 20 installed in each of the pipe lines 32, 33, 34.
And each of the pipelines 35, 36, 37 and the gas mixing chamber 2
2 and a pipe 38, in which an inert gas as a carrier gas, for example, a cylinder (not shown) filled with argon, is connected, and the pipe 3
The mass flow controller 29 installed in No. 8 and the infrared gas analyzer 20 detect the concentration of each gas component or the mass flow controller to detect the flow rate.
7, 28 and each of the mass flow controllers 29
Control device (computer) 30 for controlling the gas flow rate of the
It consists of and.

In the reaction chamber 21, for example, a MgO substrate or a substrate formed by orienting platinum on MgO is arranged. [Pb (C ₂ H ₅ ) ₄ ] (liquid) or Pb (C ₁₁ H ₁₈ O ₂ ) is used as Pb in the container 23 in the constant temperature bath 26.
(Solid) or (C ₂ H ₅ ) ₃ PbOCH ₂ C (C
H ₃ ) ₅ (liquid) is filled, and the container 24 in the constant temperature bath 27 is Zr [Zr (t-OC ₄ H ₉ ) ₄ ] (liquid) or Zr (C ₁₁ H ₁₈ O ₂ ) ₄ ( solids) is filled, tetraisopropoxytitanium _{[Ti (i-OC 3 H 7} ) 4 ] as Ti the container 25 in the thermostatic chamber 28 (liquid) or _{Ti (C 11 H 19 O 3} ) 2 (I- OC ₃ H ₇ )
₂ (solid) filled. In addition, in the case of PLZT, the pipe shown in FIG.
-C ₃ H ₇ C ₅ H ₄ ) ₃ ] (liquid) or La (C ₁₁ H
₁₉ O ₂ ) ₃ (solid) is filled and supplied to the gas mixing chamber 22 with an inert gas such as Ar. The starting material is appropriately selected from these liquid or solid organic metals and sealed in each container, and the controller 30 controls each thermostat (26, 27,
28) The inside of the chamber is controlled so as to have a predetermined constant temperature, and the components, concentrations, and flow rates of the components are detected by an infrared gas analyzer, and the flow rate of the carrier gas becomes a predetermined flow rate by each mass flow controller 29. To control.

Next, the structure of the infrared gas analyzer 20 installed in the middle of the piping of the CVD apparatus having the above structure will be described in detail. 2 is a sectional view showing the details of the configuration of the infrared gas analyzer 20 installed in the middle of the pipes (32, 33, 34), and FIG. 3 is an enlarged view of the central portion of the infrared gas analyzer of FIG. The cell block 1 is provided with a gas flow path 1a through which gas supplied from a gas cylinder or the like flows, and female threads are provided on both sides so that a pipe joint or the like not shown can be connected. The flow path 1 is provided at the center of the cell block 1.
Holes 1b and 1c that reach the flow path 1a from a predetermined angle (right angle) direction to a are penetratingly formed, and cylindrical bodies 2 and 3 having flanges 2a and 3a are fitted into these holes, respectively. The flange portions 2a, 3a of the above are fixed by being screwed to the cell block 1 with bolts 4, but in this case, they are fixed together with the pressing plates 5, 6 for sealing the spaces 2g, 3g of these cylindrical bodies 2, 3 described later. It The cylindrical bodies 2 and 3 provided with these flanges 2a and 3a may be manufactured in the same shape and size. In addition, the pressing plates 5 and 6 are directly attached to the cylindrical bodies 2 and 3 without providing the flanges 2a and 3a.
Alternatively, the spaces 2c and 3c may be fixed to the above to seal the spaces 2c and 3c.

The flow path 1a at the tips of the cylindrical bodies 2 and 3
Holes 2c and 3c in which stepped portions 2b and 3b are respectively formed and leak detecting spaces 2d and 3d which are continuous with the stepped portions 2b and 3b are formed on the side facing each other. In addition, these leads
The spaces 2e and 3e for arranging the light source 7, the detector 8 and the like are formed following the space 2d and 3d for detecting the space.
Steps 2f and 3f are formed in the middle of 3e.

The cell windows 12 and 13 are fixed to the stepped holes 2c and 3c provided at the tips of the cylindrical bodies 2 and 3, respectively. For these cell windows 12 and 13, a crystalline material that transmits infrared rays, for example, calcium fluoride, lithium fluoride, silicon dioxide, sapphire or the like is used. These cylinders 2, 3
The cell windows 12 and 13 provided at the ends of the cell block are fixedly attached by metal sputtering, and are arranged so as to face the channel 1a provided in the cell block 1. In this case, they are arranged facing each other with a predetermined cell length d. The mechanical O-rings 9 and 9 seal the space between the cell block 1 and the flange 2a and the space between the cell block 1 and the flange 3a, respectively. Between the cap 7a for covering the detector and the step portion 2f, the cap 8 for covering the detector 8 in the space 3e in which the detector 8 is arranged.
Mechanical O-rings 10 and 10 seal between a and the step portion 3f. In this way, the flow path 1a of the cell block 1
Internal space 2g of the cylinders 2 and 3 in which the light source 7 and the detector 8 are arranged
And 3g have a double seal structure because the cell windows 12 and 13 are attached by metal sputtering, and a poisonous gas or a gas with a risk of explosion is disposed inside the cylindrical bodies 2 and 3 in which the light source 7 and the detector 8 are arranged. It has a tight structure that does not leak to space or the outside.

An infrared light source 7 is arranged in the space 2e of the one cylindrical body 2 and an infrared detector 8 is arranged in the space 3e of the other cylindrical body 3, and these cylindrical bodies 2 are arranged as described above. Since 3 may be manufactured to have exactly the same shape and size, the infrared light source 7 is arranged on one side and the infrared detector 8 is arranged on the other side.
Should be arranged. An interference filter (not shown) having a wavelength matching the absorption characteristic of the measurement gas is attached in the space 3g of the cylindrical body 3 on the side where the infrared detector 8 is arranged. Although not shown, the infrared detector 8
The signal detected at is amplified and transmitted to, for example, a gas supply control device or an alarm device.

The lead wire 11 for the light source arranged in the space 2g of the cylindrical body 2 is passed through the pressing plate 5 which is fixed to the flange 2a on the upper side of the cylindrical body 2, and the pressing plate 5 and the lead wire are connected to each other. The space between 11 and 11 is sealed with hermetically sealed glass (hermetically sealed) to enhance airtightness. Similarly, the lead wire 14 for the infrared detector is passed through the holding plate 6 which is fixed to the flange 3a of the other tubular body 3, and the holding plate 6 and the lead wire 1
4 and 4 are also hermetically sealed. in this way,
Inside the inner space 2g of the cylindrical body 2 in which the light source 7 is arranged and the inner space 3g of the cylindrical body 3 in which the detector 8 is arranged, the cell windows 12, 13 are arranged.
Fixation by sputtering, mechanical O-rings 9 and 9 between the cell block 1 and the flanges 2a and 3a, and mechanical O-rings 1 between the cylindrical body 2 and the caps 7a and 8a.
0, 10, the double seal structure such as a hermetic seal between the pressing plates 5, 6 and the lead wires 11, 14 etc., the pressure resistance is 980 KPa, the leak standard is 1 × 10 ^{−. 11} atm
It can be cc / sec or less.

Next, the gas leak detecting space 3d provided between the infrared ray detector 8 and the cell window 13 at the tip of the one cylindrical body 3 and the infrared ray detector 8 (cap 8a). As shown in FIG. 3, the intervals are, for example, from infrared detectors 8 to 1
mm (a gas reel provided on the other cylinder 2 side)
(The same applies to the space between the space 2d for detecting black and the light source 7 (cap 7a)). The space 3d for gas leak detection has a spatial distance of 1: 1 or more as compared with the measurement cell length d, so that the normal measurement signal is doubled or more, and the detection signal at the time of gas leak can be increased. . That is, the gas is attached to the cylinder 3.
The gas flow path 1
When the gas leaks from the space a through the cell window 13 into the space 3e on the detector 8 side, the apparent cell length increases and the output signal increases, so that the gas leak can be detected immediately. (However, the gas leak detection space 3 is not always necessary.
d does not need to be 1: 1 or more compared with the measurement cell length d).

Further, when the "measurement cell length d" between the cell windows 12 and 13 is changed, as shown in FIG. Thickness T
_It suffices to change ₁ and T ₂ . That is, when the measurement cell length d is shortened, the thicknesses T ₁ and T ₂ of the flanges 2a and 3a are shortened, and conversely, when the measurement cell length d is lengthened, the thicknesses T ₁ and T ₂ of the flanges 2a and 3a can be lengthened. If it (provided that a case where the overall height L ₁ of the cylindrical body 2 and the flange 2a, the whole of the cylindrical body 3 and the flange 3a of the height L ₂ is constant). It should be noted that female holes may be formed in the holes 1b and 1c of the cell block 1 and male threads may be formed around the outer circumferences of the cylindrical bodies 2 and 3 for fitting by screws. In this case, the measuring cell length d can be adjusted by adjusting the fitting length of the screw.

The configuration of the infrared gas analyzer 20 is as described above, and since the airtightness can be enhanced, it can be installed as an in-line gas monitor in the pipeline for actually supplying the gas. That is, C having the configuration shown in FIG.
In the VD apparatus, since the vapor gas has an infrared absorption spectrum peculiar to the gas, it is possible to simultaneously measure and monitor the type, concentration, flow rate, etc. of the gas component with the infrared gas analyzer 20 installed in each pipeline. it can. During the film formation, the vapor gas concentration is grasped by each infrared gas analyzer 20 installed in the middle of each pipe, and the gas flow rate is controlled by each mass flow controller 29. In this way, it is possible to constantly control the stable vapor gas amount.

In addition, in the CVD apparatus having the above-described structure, when a film having an arbitrary composition ratio is formed, the infrared gas analyzer 20 installed in each pipe is arranged so that the vapor gas amount ratio corresponds to the composition ratio. Based on the measured gas concentration, the gas flow rate by each mass flow controller 29 and the container (23, 2
It is possible to control the temperature of the constant temperature bath (26, 27, 28) accommodating 4, 25) to control the vapor gas amount ratio with high accuracy. With these controls, the film forming conditions (concentration, vapor pressure, temperature, flow rate ratio, etc.) in the reaction chamber 21 can be instantly selected, and the controllability of the composition ratio of the thin film to be formed is dramatically improved. be able to. Further, during the film formation, the infrared gas analyzer 20 installed in the middle of the piping detects a rapid decrease in the gas concentration to detect each container (23,
24, 25), it becomes possible to check for the presence or absence of raw materials. Alternatively, the mass flow controller 29 can be used by detecting a rapid increase or decrease in gas concentration with the infrared gas analyzer 20.
It is also possible to stop the supply of gas by detecting an abnormality occurring on the piping such as a gas leakage inside the infrared gas analyzer 20 itself or a gas leak inside the infrared gas analyzer 20 itself.

In the embodiment of the present invention, the infrared gas analyzer provided with the detector in the region where the raw material vapor gas or the special material gas for semiconductor has an infrared absorption band has been described, but instead of the infrared gas analyzer. An ultraviolet gas analyzer provided with a detector having an absorption band in the ultraviolet region may be used. In addition, the infrared gas analyzer shown in this embodiment may be an infrared gas analyzer having another configuration, and C
Although the VD apparatus has been described in the embodiment as a thin film deposition apparatus,
Not limited to this, it can be used as a powder manufacturing apparatus or the like.

[0027]

As described in detail above, according to the infrared gas analyzer of the present invention, an infrared gas analyzer having a gas leak preventing mechanism with high airtightness can be obtained. Further, since the analyzer itself has the gas leak detection mechanism, the reliability as a gas analyzer can be improved.
Furthermore, since it has a much higher pressure resistance than the conventional infrared analyzer, it can be installed as an in-line monitor in the pipeline that actually supplies the gas. Further, according to the CVD apparatus of the present invention, the gas concentration is measured by an infrared gas analyzer installed in the middle of the pipe, and the vapor gas amount and the special material gas amount for semiconductor are arbitrarily controlled by controlling the gas flow rate and the container temperature. Can be controlled. Further, the composition ratio of the multi-element compound such as the composite metal oxide of the thin film to be formed can be stabilized and can be prepared with good reproducibility. In addition, when forming a film with an arbitrary composition ratio, based on the gas concentration by an infrared gas analyzer installed in the middle of the piping, the mass flow controller and constant temperature are adjusted so that the vapor gas amount matches the composition ratio. By controlling the bath, the carrier gas flow rate and the container temperature conditions can be instantly selected, and the film can be formed with high accuracy. Furthermore, by measuring the gas concentration with an infrared gas analyzer in the middle of the piping, it is possible to not only check the amount of raw material in the container, but also the vapor gas and the special material gas component for semiconductors, which have the predetermined components and concentrations. It can be used to constantly monitor whether or not the flow rate. When an abnormality occurs, it can be detected to shut off the light source current, stop the gas supply device, or activate the alarm device. Further, since some components such as the cylinder of the infrared gas analyzer can be manufactured in the same shape and size, the manufacturing cost can be reduced.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a CVD apparatus equipped with an infrared gas analyzer of the present invention.

FIG. 2 is a sectional view showing an embodiment of an infrared gas analyzer of the present invention and showing the details of the configuration of the infrared gas analyzer.

FIG. 3 shows an embodiment of the infrared gas analyzer of the present invention, and is a partially enlarged view of the central portion of FIG. 1.

FIG. 4 is a vertical cross-sectional view showing a configuration example of a conventional infrared gas analyzer.

[Explanation of symbols]

 20 Infrared gas analyzer 1 Cell block 1a Channel 2, 3 Cylindrical body 2d, 3d Gas leak detection space 5, 6 Holding plate 7 Light source 8 Detector 9, 10 Mechanical O-ring 11, 14 Lead wire 12, 13 Cell window 21 Reaction chamber 22 Mixing chamber 23, 24, 25 Raw material container 26, 27, 28 Constant temperature bath 29 Mass flow controller 30 Control device 31 to 38 Pipe line

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Koji Tominaga, 2 Higashimachi, Kichijoin Miya, Minami-ku, Kyoto-shi, Kyoto Prefecture Horiba Seisakusho Co., Ltd. (72) Hideji Takada, 2 Higashi-machi, Kichijoin Miya, Minami-ku, Kyoto, Kyoto Inside the HORIBA, Ltd. (72) Inventor Koichi Matsumoto 2 Higashimachi, Kichijoin Miya, Minami-ku, Kyoto-shi, Kyoto Inside HORIBA, Ltd.

Claims (5)

[Claims] 1. A cell block is provided with a gas flow path, holes are formed through the gas flow path at right angles or at a predetermined angle from both directions, and a cell window is fixed to an end portion of the cell window, and a light source or detection is provided inside the cell window. For the infrared light source or infrared detector in the cylinder, the cylinder provided with the space for arranging the container is fitted from both sides of the hole so that the cell window has a predetermined measurement cell length in the gas flow path and faces each other. An infrared gas analyzer in which the space for the infrared light source or the infrared detector is sealed with a pressing plate through which the lead wire is hermetically sealed. 2. A gas leak detection space is provided between the cell window provided at the end of the cylindrical body and the space where the light source or the detector is arranged to detect an abnormal increase in the signal during the leak. The infrared gas analyzer according to claim 1, further comprising means. 3. A flange is formed at the end of the cylindrical body on the side opposite to the cell window, and a pressing plate for sealing a space for an infrared light source or an infrared detector is fixed to the flange, and the flange is a mechanical O-ring. The infrared gas analyzer according to claim 1, which is sealed and fixed to a cell block. 4. A reaction chamber in which a thin film forming substrate is placed, a gas mixing chamber connected to the reaction chamber by a pipe, and a container filled with a film-forming raw material and connected to the mixing chamber by a pipe. A thermostatic chamber containing, and an infrared gas analyzer installed in a conduit connecting the gas mixing chamber and the container accommodated in each thermostatic chamber,
A gas supply device such as a gas cylinder for supplying a carrier gas to the mixing chamber, each container filled with the raw material, a gas supply device such as a gas cylinder for supplying a carrier gas to each container, and the mixing chamber A mass flow controller installed in the conduit of the gas supply device and in the conduit of each container filled with the raw material and the gas supply device, and the concentration of each gas component from the infrared gas analyzer or the above A CVD apparatus comprising: a controller for controlling the temperature of the temperature-controlled room and the gas flow rate of each mass flow controller according to a flow rate detection signal from each mass flow controller. 5. The CVD apparatus according to claim 4, wherein the infrared gas analyzer is the infrared gas analyzer according to claim 1, claim 2 or claim 3.