JPH08261706A - Galvanomagnetic equipment and position detection device using the equipment - Google Patents

Galvanomagnetic equipment and position detection device using the equipment

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Publication number
JPH08261706A
JPH08261706A JP6829495A JP6829495A JPH08261706A JP H08261706 A JPH08261706 A JP H08261706A JP 6829495 A JP6829495 A JP 6829495A JP 6829495 A JP6829495 A JP 6829495A JP H08261706 A JPH08261706 A JP H08261706A
Authority
JP
Japan
Prior art keywords
magnetoresistive effect
magnetoelectric
effect elements
position detecting
detecting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6829495A
Other languages
Japanese (ja)
Other versions
JP3624454B2 (en
Inventor
Yorihisa Nakamura
中村順寿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP06829495A priority Critical patent/JP3624454B2/en
Publication of JPH08261706A publication Critical patent/JPH08261706A/en
Application granted granted Critical
Publication of JP3624454B2 publication Critical patent/JP3624454B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

PURPOSE: To widen a detection width with less magnetoresistance effect elements by arranging a plurality of magnetoresistance effect elements in parallel and without completely overlapping in the longitudinal direction. CONSTITUTION: In a galvanomagnetic equipment 20, magnetoresistance effect elements 1a, 1a are arranged in parallel on a substrate 2 so that they do not completely overlap in the longitudinal direction. Connection electrodes 1d and 1e are connected to both edges of the elements 1a, 1a and the elements 1a, 1a are connected to a middle electrode 1f via connection electrodes 1d, 1d. Since the equipment 20 is arranged while it is in parallel and does not completely overlap in the longitudinal direction, the detection width is made longer than the length in the longitudinal direction of the element 1. Namely, a detection width which is longer than the length of one element of a magnetic resistance effect element can be obtained by the single two-element three-terminal type equipment 20.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は位置の変化に対応して電
気信号を出力する磁電変換器およびそれを用いた位置検
知装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoelectric converter which outputs an electric signal in response to a change in position and a position detecting device using the same.

【0002】[0002]

【従来の技術】従来から、位置の変化を検出する位置検
知装置として、磁電変換器を利用した装置が実用化され
ている。従来の磁電変換器95、および従来の位置検知
装置90を図8〜11を用いて説明する。図8は磁電変
換器95の平面図、図9は位置検知装置90の平面図、
図10、11は磁電変換器の動作を示す説明図である。
2. Description of the Related Art Conventionally, a device utilizing a magnetoelectric converter has been put into practical use as a position detecting device for detecting a change in position. A conventional magnetoelectric converter 95 and a conventional position detecting device 90 will be described with reference to FIGS. 8 is a plan view of the magnetoelectric converter 95, FIG. 9 is a plan view of the position detection device 90,
10 and 11 are explanatory views showing the operation of the magnetoelectric converter.

【0003】磁電変換器95は、図8に示すように、フ
ェライトなどの磁性体あるいはガラスからなる基板2上
に二個の長方形状の磁気抵抗効果素子1a、1aが互い
に平行に、かつその長辺方向に完全に重なって配置され
ている。磁気抵抗効果素子1a、1aの両端には接続電
極1d、1eがそれぞれ接続され、その二個の接続電極
1dどうしが、中間電極1fにより接続されている。そ
して一方の接続電極1eには入力端子3aが、中間電極
1fには出力端子3bが、他方の接続電極1eには接地
端子3cがそれぞれ接続されている。さらに磁気バイア
スを印加するために磁気抵抗効果素子1a、1aに隣接
して、永久磁石(図示せず)が設けられている。
As shown in FIG. 8, a magnetoelectric converter 95 includes two rectangular magnetoresistive effect elements 1a and 1a which are parallel to each other on a substrate 2 which is made of a magnetic material such as ferrite or glass and whose length is long. It is placed so as to completely overlap in the lateral direction. Connection electrodes 1d and 1e are respectively connected to both ends of the magnetoresistive effect elements 1a and 1a, and the two connection electrodes 1d are connected to each other by an intermediate electrode 1f. The input terminal 3a is connected to the one connection electrode 1e, the output terminal 3b is connected to the intermediate electrode 1f, and the ground terminal 3c is connected to the other connection electrode 1e. Further, permanent magnets (not shown) are provided adjacent to the magnetoresistive effect elements 1a and 1a for applying a magnetic bias.

【0004】磁気抵抗効果素子1a、1a、接続電極1
e、1eおよび中間電極1fは、よく知られているよう
に磁気に対して抵抗値が変化するバルクのInSbある
いはNiFeを基板2に接着したのち研削により薄膜状
に形成した磁気抵抗効果膜と、導電性を示す金属膜とか
ら構成されている。また磁気抵抗効果素子1a、1a、
接続電極1dおよび中間電極1fを保護するために、シ
リカや窒化ケイ素などをスパッタリングして、あるいは
スピンオングラス法などを用いて保護膜(図示せず)が
形成されている。
Magnetoresistive effect elements 1a, 1a, connection electrode 1
e, 1e and the intermediate electrode 1f are a well-known magnetoresistive film formed in a thin film by adhering bulk InSb or NiFe whose resistance value changes with respect to magnetism to the substrate 2 and then grinding. It is composed of a conductive metal film. Further, the magnetoresistive effect elements 1a, 1a,
In order to protect the connection electrode 1d and the intermediate electrode 1f, a protective film (not shown) is formed by sputtering silica or silicon nitride, or by using a spin-on-glass method or the like.

【0005】なお磁気抵抗効果素子はその抵抗値が温度
変化に対して、大きく変化するので上述したように同一
特性を有する二個の磁気抵抗効果素子1a、1aが、直
列接続された二素子三端子型として用いるのが一般的で
ある。
Since the resistance value of the magnetoresistive effect element greatly changes with temperature, two magnetoresistive effect elements 1a and 1a having the same characteristics as described above are connected in series. It is generally used as a terminal type.

【0006】次に図10、11を用いて、磁電変換器の
動作を説明する。
Next, the operation of the magnetoelectric converter will be described with reference to FIGS.

【0007】図10に示すように、磁電変換器95に磁
性体4が接近すると、磁気抵抗効果素子1a、1aに印
加される磁場が変化し、印加された部分の抵抗値が大き
くなる。そして磁気抵抗効果素子1a、1aの抵抗値の
差に対応した図11に示すような電圧が出力端子3bか
ら出力される。すなわち磁性体の位置が出力電圧に変換
される磁電変換器95として機能する。
As shown in FIG. 10, when the magnetic body 4 approaches the magnetoelectric converter 95, the magnetic field applied to the magnetoresistive effect elements 1a, 1a changes, and the resistance value of the applied portion increases. Then, the voltage corresponding to the difference between the resistance values of the magnetoresistive effect elements 1a and 1a as shown in FIG. 11 is output from the output terminal 3b. That is, it functions as a magnetoelectric converter 95 that converts the position of the magnetic body into an output voltage.

【0008】また、単一の磁電変換器で構成された位置
検知装置より広い検知幅が必要な場合には、複数個の磁
電変換器95、95...を用いた位置検知装置90が
実用化されている。
Further, when a detection width wider than that of the position detecting device composed of a single magnetoelectric converter is required, a plurality of magnetoelectric converters 95, 95. . . The position detecting device 90 using the is put into practical use.

【0009】図9に示すように、位置検知装置90は、
ホルダ5に複数個の磁電変換器95、95...が、そ
れを構成する磁気抵抗効果素子の長辺方向に一列に配置
された構成を有している。そしてそれぞれの磁電変換器
が有する入力端子3a、出力端子3b、接地端子3cが
互いに独立して外部の検知装置(図示せず)に接続され
ている。
As shown in FIG. 9, the position detecting device 90 is
A plurality of magnetoelectric converters 95, 95. . . However, it has a configuration in which the magnetoresistive effect elements forming the same are arranged in a line in the long side direction. The input terminal 3a, output terminal 3b, and ground terminal 3c of each magnetoelectric converter are independently connected to an external detection device (not shown).

【0010】[0010]

【発明が解決しようとする課題】 従来の位置検知装置
に用いられる二素子三端子型の磁電変換器は、二個の長
方形状の磁気抵抗効果素子1a、1aが互いに平行に、
かつその長辺方向を完全に重ねて配置されているので、
磁気抵抗効果素子の一素子分の長さしか検知できなかっ
た。さらに検知幅を広くするためには、多数個の磁電変
換器を横に並べて位置検知装置を構成しなければならな
かった。
In a two-element three-terminal type magnetoelectric converter used in a conventional position detecting device, two rectangular magnetoresistive effect elements 1a and 1a are parallel to each other,
And since it is arranged so that its long side direction is completely overlapped,
Only the length of one magnetoresistive element could be detected. In order to further widen the detection width, a large number of magnetoelectric converters must be arranged side by side to form a position detection device.

【0011】[0011]

【課題を解決するための手段】 本発明の請求項1に係
る磁電変換器は、二個の長方形状の磁気抵抗効果素子に
より構成された二素子三端子型の磁電変換器において、
前記二個の磁気抵抗効果素子が、互いに平行に、かつ長
辺方向に完全には重ならずに配置されたことを特徴とす
る。
Means for Solving the Problems A magnetoelectric converter according to claim 1 of the present invention is a two-element three-terminal type magnetoelectric converter constituted by two rectangular magnetoresistive effect elements,
It is characterized in that the two magnetoresistive effect elements are arranged parallel to each other and do not completely overlap each other in the long side direction.

【0012】本発明の請求項2に係る位置検知装置は、
複数個の請求項1記載の磁電変換器が、当該磁電変換器
を構成する磁気抵抗効果素子の長辺方向に、一列に配置
されて構成されたことを特徴とする。
A position detecting device according to claim 2 of the present invention is
A plurality of the magnetoelectric converters according to claim 1 are arranged in a line in the long side direction of the magnetoresistive effect element forming the magnetoelectric converter.

【0013】本発明の請求項3に係る位置検知装置は、
複数個の長方形状の磁気抵抗効果素子が、平行二列に、
かつ、異なる列の磁気抵抗効果素子どうしが長辺方向に
完全には重ならないように配置されるとともに、一方の
列に配置された任意の磁気抵抗効果素子と、他方の列に
配置された任意の磁気抵抗効果素子とが接続されて二素
子三端子型の磁電変換器が複数個構成され、当該複数個
の磁電変換器が組み合わされて構成されたことを特徴と
する。
A position detecting device according to claim 3 of the present invention is
A plurality of rectangular magnetoresistive elements are arranged in two parallel rows.
Further, the magnetoresistive effect elements in different columns are arranged so as not to completely overlap each other in the long side direction, and the arbitrary magnetoresistive effect elements arranged in one row and the arbitrary magnetoresistive effect elements arranged in the other row are arranged. And a plurality of two-element three-terminal type magnetoelectric converters are connected to each other, and the plurality of magnetoelectric converters are combined together.

【0014】[0014]

【作用】 本発明の請求項1に係る磁電変換器は、二個
の長方形状の磁気抵抗効果素子により構成された二素子
三端子型の磁電変換器において、磁気抵抗効果素子が、
互いに平行に、かつ長辺方向に完全には重ならずに配置
されているので、検知幅が広くなる。
The magnetoelectric transducer according to claim 1 of the present invention is a two-element three-terminal type magnetoelectric transducer constituted by two rectangular magnetoresistance effect elements, wherein the magnetoresistance effect element is
Since they are arranged parallel to each other and do not completely overlap each other in the long side direction, the detection width becomes wide.

【0015】本発明の請求項2に係る位置検知装置は、
複数個の請求項1記載の磁電変換器が、当該磁電変換器
を構成する磁気抵抗効果素子の長辺方向に、一列に配置
されているので、検知幅が広くなる。
A position detecting device according to claim 2 of the present invention is
Since the plurality of magnetoelectric converters according to claim 1 are arranged in a line in the long side direction of the magnetoresistive effect element which constitutes the magnetoelectric converter, the detection width becomes wide.

【0016】本発明の請求項3に係る位置検知装置は、
複数個の長方形状の磁気抵抗効果素子が、平行二列に、
かつ、異なる列の磁気抵抗効果素子どうしが長辺方向に
完全には重ならないように配置されるとともに、一方の
列に配置された任意の磁気抵抗効果素子と、他方の列に
配置された任意の磁気抵抗効果素子とが接続されて二素
子三端子型の磁電変換器が複数個構成され、当該複数個
の磁電変換器が組み合わされて構成されているので、検
知幅が広くなる。 〔発明の詳細な説明〕
A position detecting device according to claim 3 of the present invention is
A plurality of rectangular magnetoresistive elements are arranged in two parallel rows.
Further, the magnetoresistive effect elements in different columns are arranged so as not to completely overlap each other in the long side direction, and the arbitrary magnetoresistive effect elements arranged in one row and the arbitrary magnetoresistive effect elements arranged in the other row are arranged. Since a plurality of two-element three-terminal type magnetoelectric converters are connected to the magnetoresistive effect element and the plurality of magnetoelectric converters are combined, the detection width is widened. [Detailed Description of the Invention]

【0017】[0017]

【実施例】【Example】

(実施例1)本発明の一実施例に係る磁電変換器20
を、図1の平面図を用いて説明する。なお従来例と同一
の部分については同一の符号を用い、その説明を省略す
る。
(Embodiment 1) Magnetoelectric converter 20 according to an embodiment of the present invention
Will be described with reference to the plan view of FIG. The same parts as those in the conventional example are designated by the same reference numerals, and the description thereof will be omitted.

【0018】図1に示すように、本発明に係る磁電変換
器20は、基板2に、磁気抵抗効果素子1a、1aが、
互いに平行に、かつ長辺方向に完全に重ならずに、配置
された構成を有している。磁気抵抗効果素子1a、1a
の両端にはそれぞれ接続電極1d、1eが接続され、磁
気抵抗効果素子1a、1aが、それぞれの接続電極1
d、1dを介して中間電極1fに接続されている。一方
の接続電極1eには入力端子3aが、中間電極1fには
出力端子3bが、他方の接続電極1eには接地端子3c
がそれぞれ接続されている。
As shown in FIG. 1, in a magnetoelectric converter 20 according to the present invention, a magnetoresistive effect element 1a, 1a is provided on a substrate 2.
It has a configuration in which they are arranged in parallel with each other and do not completely overlap in the long side direction. Magnetoresistive effect element 1a, 1a
The connection electrodes 1d and 1e are connected to both ends of the magnetoresistive effect element 1a and 1a, respectively.
It is connected to the intermediate electrode 1f via d and 1d. One of the connection electrodes 1e has an input terminal 3a, the intermediate electrode 1f has an output terminal 3b, and the other connection electrode 1e has a ground terminal 3c.
Are connected respectively.

【0019】磁電変換器は互いに平行に、かつ長辺方向
に完全に重ならずに、配置されているので検知幅が、磁
気抵抗効果素子1aの長辺方向の長さより長くなる。す
なわち、一個の二素子三端子型の磁電変換器で、磁気抵
抗効果素子一素子の長さより長い検知幅を得ることがで
きる。なお本実施例では、磁気抵抗効果素子1a、1a
が長辺方向に完全に重ならずに配置されているが、一部
分で重なるように配置されていてもよい。
Since the magnetoelectric converters are arranged parallel to each other and not completely overlapped in the long side direction, the detection width becomes longer than the length of the magnetoresistive effect element 1a in the long side direction. That is, with a single two-element three-terminal type magnetoelectric converter, it is possible to obtain a detection width longer than the length of one magnetoresistive effect element. In this embodiment, the magnetoresistive effect elements 1a, 1a are
Are arranged so that they do not completely overlap in the long side direction, but they may be arranged so as to partially overlap.

【0020】(実施例2)本発明の第二の実施例に係る
位置検知装置30を、図2の平面図を用いて説明する。
(Embodiment 2) A position detecting device 30 according to a second embodiment of the present invention will be described with reference to the plan view of FIG.

【0021】図2に示すように、本発明に係る位置検知
装置30は、ホルダ5に複数個の磁電変換器20、2
0...が、磁電変換器20を構成する磁気抵抗効果素
子の長辺方向に載置された構成となっている。この磁電
変換器20は実施例1で述べたものを用いている。それ
ぞれの磁電変換器20に設けられた入力端子3a、出力
端子3b、接地端子3cは、図示しない検知回路に互い
に独立して接続されている。本実施例においては、位置
検知装置30の検知幅を広くするために、多数個の磁電
変換器20がホルダ5に配置されたものである。個々の
磁電変換器20は、それを構成する磁気抵抗効果素子が
互いに平行で、かつ長辺方向に完全には重ならず配置さ
れているので、少ない磁気抵抗効果素子からなる磁電変
換器で、磁気抵抗効果素子1aの一素子の長さより長い
検知幅を得ることができるため、検知幅の広い位置検知
装置が構成できる。
As shown in FIG. 2, the position detecting device 30 according to the present invention includes a holder 5 having a plurality of magneto-electric converters 20, 2.
0. . . However, the magnetoresistive effect element that constitutes the magnetoelectric converter 20 is mounted in the long side direction. The magnetoelectric converter 20 uses the one described in the first embodiment. The input terminal 3a, the output terminal 3b, and the ground terminal 3c provided in each magnetoelectric converter 20 are independently connected to a detection circuit (not shown). In the present embodiment, a large number of magnetoelectric converters 20 are arranged in the holder 5 in order to widen the detection width of the position detection device 30. The individual magnetoelectric converters 20 are magnetoelectric converters composed of a small number of magnetoresistive effect elements, because the magnetoresistive effect elements forming the magnetoelectric effect elements are arranged in parallel with each other and are not completely overlapped in the long side direction. Since a detection width longer than the length of one element of the magnetoresistive effect element 1a can be obtained, a position detection device having a wide detection width can be configured.

【0022】(実施例3)本発明に係る別の実施例の位
置検知装置40を、図3、図4の配置図を用いて説明す
る。
(Embodiment 3) A position detecting device 40 according to another embodiment of the present invention will be described with reference to the layout diagrams of FIGS.

【0023】図3に示すように、位置検知装置40は、
複数個の長方形状の磁気抵抗効果素子1a、1a...
が平行二列に、かつ、異なる列の磁気抵抗効果素子1
a、1aどうしが長辺方向に重ならないように、ホルダ
5に載置された構造を有している。一方の列に配置され
た磁気抵抗効果素子1aと、その磁気抵抗効果素子1a
に隣接し、かつ他方の列に配置された磁気抵抗効果素子
1aとが接続されて、二素子三端子型の磁電変換器50
が複数個構成されている。さらに、それぞれの磁電変換
器50に接続された、入力端子3a、出力端子3b、接
地端子3cは独立して図示しない検知回路に接続されて
いる。なお図4に示すように、一方の列に配置された磁
気抵抗効果素子と、他方の列に配置された磁気抵抗効果
素子とが、一部分で重なっていてもよい。
As shown in FIG. 3, the position detecting device 40 includes
A plurality of rectangular magnetoresistive effect elements 1a, 1a. . .
In parallel two rows, but in different rows
It has a structure mounted on the holder 5 so that a and 1a do not overlap each other in the long side direction. Magnetoresistive effect element 1a arranged in one row and the magnetoresistive effect element 1a
Is connected to the magnetoresistive effect element 1a arranged in the other row, and the two-element three-terminal type magnetoelectric converter 50 is connected.
Is configured in plural. Further, the input terminal 3a, the output terminal 3b, and the ground terminal 3c, which are connected to the respective magnetoelectric converters 50, are independently connected to a detection circuit (not shown). Note that, as shown in FIG. 4, the magnetoresistive effect element arranged in one row and the magnetoresistive effect element arranged in the other row may partially overlap each other.

【0024】以上のような構成を有する位置検知装置
は、このように磁気抵抗効果素子が配置されているの
で、従来よりも少ない磁気抵抗効果素子により検知幅の
広い位置検知装置が構成できる。
In the position detecting device having the above-mentioned structure, since the magnetoresistive effect elements are arranged in this way, a position detecting device having a wider detection width can be formed by using a smaller number of magnetoresistive effect elements than the conventional one.

【0025】(実施例4)本発明に係る別の実施例の位
置検知装置60を、図5の平面図を用いて説明する。
(Embodiment 4) A position detecting device 60 according to another embodiment of the present invention will be described with reference to the plan view of FIG.

【0026】図5に示すように、位置検知装置60は、
複数個の長方形状の磁気抵抗効果素子1aが長辺方向に
平行二列に、かつ長辺方向に完全に重ならずに配置され
ている。なお一方の列に配置された磁気抵抗効果素子1
aと、他方の列に配置された磁気抵抗効果素子1aと
が、一部分で重なっていてもよい。
As shown in FIG. 5, the position detecting device 60 includes
A plurality of rectangular magnetoresistive effect elements 1a are arranged in two parallel rows in the long side direction and are not completely overlapped in the long side direction. The magnetoresistive element 1 arranged in one row
a and the magnetoresistive effect element 1a arranged in the other row may partially overlap.

【0027】そして一方の列から選ばれる任意の磁気抵
抗効果素子1aと、他方の列から選ばれる任意の磁気抵
抗効果素子1aとがそれぞれ直列接続されて二素子三端
子型の磁電変換器50が構成されている。さらに、それ
ぞれの磁電変換器50の、入力端子3a、出力端子3
b、接地端子3cは独立して図示しない検知回路に接続
されている。
An arbitrary magnetoresistive effect element 1a selected from one row and an arbitrary magnetoresistive effect element 1a selected from the other row are connected in series to form a two-element three-terminal type magnetoelectric converter 50. It is configured. Furthermore, the input terminal 3a and the output terminal 3 of each magnetoelectric converter 50
b and the ground terminal 3c are independently connected to a detection circuit (not shown).

【0028】以上のような構成を有する位置検知装置は
このように磁気抵抗効果素子が配置されているので、従
来よりも少ない磁気抵抗効果素子により検知幅の広い位
置検知装置が構成できる。
In the position detecting device having the above structure, since the magnetoresistive effect elements are arranged in this way, a position detecting device having a wider detection range can be constructed by using less magnetoresistive effect elements than the conventional one.

【0029】(実施例5)本発明に係る別の実施例の位
置検知装置70を、図6の配置図を用いて説明する。
(Embodiment 5) A position detecting device 70 according to another embodiment of the present invention will be described with reference to the layout diagram of FIG.

【0030】図6に示すように、本発明に係る位置検知
装置70は、基板2に長方形状を有する、複数個の磁気
抵抗効果素子1a、1a...が、磁気抵抗効果を有す
る材料がスパッタリングあるいはバルクからの研削によ
り成膜されたのち、フォトリソグラフィ−により形成さ
れた構成を有している。以下に本発明に係る一実施例位
置検知装置70の構造を詳細に説明する。
As shown in FIG. 6, the position detecting device 70 according to the present invention comprises a plurality of magnetoresistive effect elements 1a, 1a. . . However, it has a structure in which a material having a magnetoresistive effect is formed by sputtering or grinding from a bulk and then formed by photolithography. Hereinafter, the structure of the position detecting device 70 according to the embodiment of the present invention will be described in detail.

【0031】図示するように、位置検知装置70は、フ
ェライトからなる基板2に、InSb薄膜からなる複数
個の磁気抵抗効果素子1a、1a...が、平行二列
に、かつ、異なる列の磁気抵抗効果素子どうしが、長辺
方向に重ならないように配置されるとともに、一方の列
に配置された磁気抵抗効果素子と、他方の列に配置され
前記磁気抵抗効果素子に隣接する磁気抵抗効果素子とが
接続されて、二素子三端子型の磁電変換器55が形成さ
れることにより構成されている。また本実施例において
は入力端子3a、出力端子3b、接地端子3cにかえ
て、入力電極3d、出力電極3e、接地電極3fが形成
されている。なお一方の列に配置された磁気抵抗効果素
子と、他方の列に配置された磁気抵抗効果素子とが、一
部分で重なっていてもよい。
As shown in the figure, the position detecting device 70 includes a plurality of magnetoresistive effect elements 1a, 1a. . . Are arranged in two parallel rows, and the magnetoresistive effect elements in different rows are arranged so as not to overlap each other in the long side direction, and the magnetoresistive effect elements arranged in one row and the other row are arranged. The magnetoresistive effect element adjacent to the magnetoresistive effect element is connected to form a two-element three-terminal type magnetoelectric converter 55. In this embodiment, an input electrode 3d, an output electrode 3e and a ground electrode 3f are formed instead of the input terminal 3a, the output terminal 3b and the ground terminal 3c. The magnetoresistive effect element arranged in one row and the magnetoresistive effect element arranged in the other row may partially overlap each other.

【0032】本実施例においては、複数個の磁気抵抗効
果素子を、フォトリソグラフィ−により絶縁基板に形成
するので、製造工程が簡略化されるとともに、磁電変換
器相互の位置が精度よく定まる。
In this embodiment, since a plurality of magnetoresistive effect elements are formed on the insulating substrate by photolithography, the manufacturing process is simplified and the mutual positions of the magnetoelectric converters are accurately determined.

【0033】以上のような構成を有する位置検知装置は
このように磁気抵抗効果素子が配置されているので、従
来よりも少ない磁気抵抗効果素子により検知幅の広い位
置検知装置が構成できる。
Since the magnetoresistive effect element is arranged in this way in the position detecting device having the above-mentioned structure, the position detecting device having a wider detection width can be constituted by the magnetoresistive effect element which is smaller than the conventional one.

【0034】(実施例6)本発明に係る別の実施例の位
置検知装置80を、図7の配置図を用いて説明する。
(Sixth Embodiment) A position detecting device 80 according to another embodiment of the present invention will be described with reference to the layout diagram of FIG.

【0035】図7に示すように、本発明に係る位置検知
装置80は、基板2に長方形状を有する、複数個の磁気
抵抗効果素子1a、1a...が、磁気抵抗効果を有す
る材料がスパッタリングあるいはバルクからの研削によ
り成膜されたのち、フォトリソグラフィ−により形成さ
れて構成されている。以下に本発明に係る一実施例位置
検知装置80の構造を詳細に説明する。
As shown in FIG. 7, the position detecting device 80 according to the present invention comprises a plurality of magnetoresistive effect elements 1a, 1a. . . However, a material having a magnetoresistive effect is formed by sputtering or grinding from a bulk and then formed by photolithography. The structure of the position detecting device 80 according to the embodiment of the present invention will be described in detail below.

【0036】図示するように、位置検知装置80は、フ
ェライトからなる基板2に、InSb薄膜からなる複数
個の磁気抵抗効果素子1a、1a...が、平行二列
に、かつ、異なる列の磁気抵抗効果素子どうしが長辺方
向に完全には重ならないように配置されるとともに、一
方の列に配置された任意の磁気抵抗効果素子と、他方の
列に配置された任意の磁気抵抗効果素子とが接続され
て、二素子三端子型の磁電変換器が形成されることによ
り構成されている。また一方の列に配置された磁気抵抗
効果素子と、他方の列に配置された磁気抵抗効果素子と
が、一部分で重なっていてもよい。
As shown in the figure, the position detecting device 80 includes a plurality of magnetoresistive effect elements 1a, 1a. . . Is arranged in two parallel rows so that magnetoresistive effect elements in different rows do not completely overlap each other in the long side direction, and an arbitrary magnetoresistive effect element arranged in one row and the other Is connected to an arbitrary magnetoresistive effect element arranged in the column to form a two-element three-terminal type magnetoelectric converter. Further, the magnetoresistive effect element arranged in one row and the magnetoresistive effect element arranged in the other row may partially overlap each other.

【0037】以上のような構成により互いに隣接しない
磁気抵抗効果素子1a、1aにより二素子三端子型の磁
電変換器55が形成され、位置検知装置80が構成され
ている。本実施例においては入力端子3a、出力端子3
b、接地端子3cにかえて、入力電極3d、出力電極3
e、接地電極3fが形成されている。本実施例において
は、複数個の磁電変換器を、一つの工程で絶縁基板に形
成するので、製造工程が簡略化されるとともに、磁電変
換器相互の位置が精度よく定まる。
With the above configuration, the magnetoresistive effect elements 1a, 1a which are not adjacent to each other form the two-element three-terminal type magnetoelectric converter 55, and the position detecting device 80 is constituted. In this embodiment, the input terminal 3a and the output terminal 3
b, input electrode 3d, output electrode 3 instead of ground terminal 3c
e, the ground electrode 3f is formed. In the present embodiment, since a plurality of magnetoelectric converters are formed on the insulating substrate in one step, the manufacturing process is simplified and the positions of the magnetoelectric converters are accurately determined.

【0038】以上のような構成を有する位置検知装置は
このように磁気抵抗効果素子が配置されているので、従
来よりも少ない磁気抵抗効果素子により検知幅の広い位
置検知装置が構成できる。
Since the magnetoresistive effect element is arranged in this way in the position detecting device having the above-described structure, the position detecting device having a wider detection width can be constituted by using less magnetoresistive effect element than the conventional one.

【0039】なお本実施例においては、それぞれの磁気
抵抗効果素子と接続電極とを接続する電極膜は互いに交
差する部分があるので、絶縁層と交互に形成するとい
う、いわゆる多層薄膜技術により形成される。
In this embodiment, since the electrode films connecting the magnetoresistive effect elements and the connection electrodes have portions intersecting with each other, they are formed by a so-called multi-layer thin film technique of alternately forming insulating layers. It

【0040】また実施例1〜4で説明した位置検知装置
は、信号を入力あるいは出力するために、端子を用いた
例について説明したが、入出力電極を用いてもよいこと
はいうまでもない。
In the position detecting devices described in the first to fourth embodiments, the terminals are used to input or output signals, but it goes without saying that input / output electrodes may be used. .

【0041】[0041]

【発明の効果】 本発明に係る磁電変換器は、二個の長
方形状の磁気抵抗効果素子が、互いに平行に、かつ長辺
方向に完全には重ならずに配置されているので、検知幅
を広くできる。
EFFECTS OF THE INVENTION In the magnetoelectric converter according to the present invention, two rectangular magnetoresistive effect elements are arranged in parallel with each other and do not completely overlap each other in the long side direction. Can be widened.

【0042】本発明に係る位置検知装置は、検知幅を広
くするために、多数個の磁電変換器がホルダに配置さ
れ、個々の磁電変換器は、それを構成する磁気抵抗効果
素子が互いに平行で、かつ長辺方向に完全には重ならず
配置されているので、少ない磁電変換器で、磁気抵抗効
果素子の一素子の長さより長い検知幅を得ることができ
るため、検知幅の広い位置検知装置が構成できる。
In the position detecting device according to the present invention, a large number of magnetoelectric converters are arranged in the holder in order to widen the detection width, and the magnetoresistive effect elements constituting the individual magnetoelectric converters are parallel to each other. In addition, since it is arranged so that it does not completely overlap in the long side direction, it is possible to obtain a detection width that is longer than the length of one magnetoresistive effect element with a small number of magnetoelectric converters. A detector can be configured.

【0043】本発明に係る位置検知装置は、複数個の長
方形状の磁気抵抗効果素子が、平行二列に、かつ異なる
列の磁気抵抗効果素子どうしが長辺方向に完全に重なら
ないように基板に形成され、一方の列に配置された任意
の磁気抵抗効果素子と、他方の列に配置された任意の磁
気抵抗効果素子とが、相互に直列接続された構成の二素
子三端子型磁電変換器を有しているので、少ない磁電変
換素子で検知幅が広い位置検知装置が形成できる。
In the position detecting device according to the present invention, the plurality of rectangular magnetoresistive effect elements are arranged in two parallel rows so that the magnetoresistive effect elements in different rows do not completely overlap in the long side direction. , A two-element three-terminal type magnetoelectric conversion device in which any magnetoresistive effect element arranged in one row and any magnetoresistive effect element arranged in the other row are connected in series to each other. Since it has a vessel, it is possible to form a position detection device having a wide detection width with a small number of magnetoelectric conversion elements.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る一実施例磁電変換器の平面図であ
る。
FIG. 1 is a plan view of an example magnetoelectric converter according to the present invention.

【図2】本発明に係る一実施例位置検知装置の平面図で
ある。
FIG. 2 is a plan view of a position detection device according to an embodiment of the present invention.

【図3】本発明に係る別の実施例位置検知装置の平面図
である。
FIG. 3 is a plan view of a position detecting device according to another embodiment of the present invention.

【図4】本発明に係る別の実施例位置検知装置の平面図
である。
FIG. 4 is a plan view of a position detecting device according to another embodiment of the present invention.

【図5】本発明に係る別の実施例位置検知装置の平面図
である。
FIG. 5 is a plan view of a position detecting device according to another embodiment of the present invention.

【図6】本発明に係る別の実施例位置検知装置の平面図
である。
FIG. 6 is a plan view of a position detecting device according to another embodiment of the present invention.

【図7】本発明に係る別の実施例位置検知装置の平面図
である。
FIG. 7 is a plan view of a position detecting device according to another embodiment of the present invention.

【図8】従来の磁電変換器の平面図である。FIG. 8 is a plan view of a conventional magnetoelectric converter.

【図9】従来の位置検知装置の平面図である。FIG. 9 is a plan view of a conventional position detection device.

【図10】従来の位置検知装置の説明図である。FIG. 10 is an explanatory diagram of a conventional position detection device.

【図11】従来の位置検知装置の説明図である。FIG. 11 is an explanatory diagram of a conventional position detection device.

【符号の説明】[Explanation of symbols]

1a 磁気抵抗
効果素子 1d、1e 接続電極 1f 中間電極 2 基板 3a 入力端子 3b 出力端子 3c 接地端子 3d 入力電極 3e 出力電極 3f 接地電極 4 磁性体 5 ホルダ 20、50、95 磁電変換
器 30、40、60、70、80、90 位置検知
装置
1a Magnetoresistive element 1d, 1e Connection electrode 1f Intermediate electrode 2 Substrate 3a Input terminal 3b Output terminal 3c Ground terminal 3d Input electrode 3e Output electrode 3f Ground electrode 4 Magnetic body 5 Holder 20, 50, 95 Magnetoelectric converter 30, 40, 60, 70, 80, 90 Position detection device

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 二個の長方形状の磁気抵抗効果素子によ
り構成された二素子三端子型の磁電変換器において、前
記二個の磁気抵抗効果素子が、互いに平行に、かつ長辺
方向に完全には重ならずに配置されたことを特徴とする
磁電変換器。
1. A two-element three-terminal type magnetoelectric converter composed of two rectangular magnetoresistive effect elements, wherein the two magnetoresistive effect elements are completely parallel to each other and in the long side direction. Magnetoelectric converter characterized in that they are arranged without overlapping.
【請求項2】 複数個の請求項1記載の磁電変換器が、
当該磁電変換器を構成する磁気抵抗効果素子の長辺方向
に、一列に配置されて構成されたことを特徴とする位置
検知装置。
2. A plurality of magnetoelectric converters according to claim 1,
A position detection device, which is arranged in a line in a long side direction of a magnetoresistive effect element that constitutes the magnetoelectric converter.
【請求項3】 複数個の長方形状の磁気抵抗効果素子
が、平行二列に、かつ、異なる列の磁気抵抗効果素子ど
うしが長辺方向に完全には重ならないように配置される
とともに、一方の列に配置された任意の磁気抵抗効果素
子と、他方の列に配置された任意の磁気抵抗効果素子と
が接続されて二素子三端子型の磁電変換器が複数個構成
され、当該複数個の磁電変換器が組み合わされて構成さ
れたことを特徴とする位置検知装置。
3. A plurality of rectangular magnetoresistive effect elements are arranged in two parallel rows so that magnetoresistive effect elements in different rows do not completely overlap each other in the long side direction. A plurality of two-element three-terminal type magnetoelectric converters are configured by connecting any magnetoresistive effect element arranged in the row and any magnetoresistive effect element arranged in the other row. A position detecting device comprising a combination of the above-mentioned magnetoelectric converters.
JP06829495A 1995-03-27 1995-03-27 Magnetoelectric converter and position detection device using the same Expired - Fee Related JP3624454B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06829495A JP3624454B2 (en) 1995-03-27 1995-03-27 Magnetoelectric converter and position detection device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06829495A JP3624454B2 (en) 1995-03-27 1995-03-27 Magnetoelectric converter and position detection device using the same

Publications (2)

Publication Number Publication Date
JPH08261706A true JPH08261706A (en) 1996-10-11
JP3624454B2 JP3624454B2 (en) 2005-03-02

Family

ID=13369626

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3624454B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6891367B2 (en) 2001-09-28 2005-05-10 Murata Manufacturing Co., Ltd. Magnetic sensor including a plurality of staggerred overlapping rows of magnetoresistive elements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6891367B2 (en) 2001-09-28 2005-05-10 Murata Manufacturing Co., Ltd. Magnetic sensor including a plurality of staggerred overlapping rows of magnetoresistive elements

Also Published As

Publication number Publication date
JP3624454B2 (en) 2005-03-02

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