JPH082592Y2 - Micro system gas sensor - Google Patents
Micro system gas sensorInfo
- Publication number
- JPH082592Y2 JPH082592Y2 JP1988140411U JP14041188U JPH082592Y2 JP H082592 Y2 JPH082592 Y2 JP H082592Y2 JP 1988140411 U JP1988140411 U JP 1988140411U JP 14041188 U JP14041188 U JP 14041188U JP H082592 Y2 JPH082592 Y2 JP H082592Y2
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- Prior art keywords
- substrate
- hole
- gas sensor
- diaphragm
- actuator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Sampling And Sample Adjustment (AREA)
Description
【考案の詳細な説明】 〈産業上の利用分野〉 本考案は,Siウエハとピエゾ素子を用いたアクチュエ
ータおよび半導体式ガスセンサを用いて構成したマイク
ロシステムガスセンサに関するものである。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to an actuator using a Si wafer and a piezo element, and a microsystem gas sensor configured using a semiconductor gas sensor.
〈従来の技術〉 半導体式ガスセンサは感度が高く，小形軽量，長寿
命，応答が早い等の特徴があり，様々な毒性ガスや，二
酸化窒素，オゾン等の酸化性ガスにも感じるので広く用
いられている。<Prior Art> Semiconductor gas sensors have the characteristics of high sensitivity, small size, light weight, long life and quick response, and are widely used because they are sensitive to various toxic gases and oxidizing gases such as nitrogen dioxide and ozone. ing.
〈考案が解決しようとする課題〉 しかしながら，上記半導体式ガスセンサを測定システ
ムとして組込んで動作させる為には他の部品，例えばガ
ス切換スイッチ，ガス流路等が大きくなり全体として小
形に構成するのは難しいという問題点があった。<Problems to be solved by the invention> However, in order to incorporate and operate the semiconductor gas sensor as a measurement system, other components such as a gas changeover switch and a gas flow path become large, and the overall structure is made small. Was difficult.
本考案は上記従来技術の問題点に鑑みて成されたもの
で，半導体ガスセンサを測定システムに組込んで，全体
として小形化を図ったマイクロシステムガスセンサを提
供することを目的とする。The present invention has been made in view of the above problems of the prior art, and an object of the present invention is to provide a semiconductor gas sensor incorporated in a measurement system to provide a micro system gas sensor which is downsized as a whole.
〈課題を解決するための手段〉 上記課題を解決する為の本考案の構成は,SiSi単結晶
からなる第１の基板と,Si単結晶若しくはガラス材から
なる第２の基板と，前記第1,第２基板の少なくとも一方
に形成された溝と，前記第1,第２の基板を張り合わせて
前記溝により形成されたガス通路と，この通路の途中に
配置された半導体式ガスセンサと，前記ガス通路に連通
し前記半導体式ガスセンサを挟んで前記第２の基板に形
成された貫通孔と，該貫通孔に対向する位置に前記第１
の基板の表面をエッチングして形成された中心にメサ部
を有するダイアフラムと，前記第２基板側から前記第１
基板側に延長され前記ダイアフラムのメサ部に接する様
に設けられたピエゾ素子と弾性部材からなるアクチュエ
ータとを具備し，前記ピエゾ素子に通電しない状態では
前記弾性部材の弾性により前記ダイアフラムのメサ部を
押圧して前記貫通孔を閉の状態とし，前記ピエゾ素子に
通電した状態では前記弾性部材の弾性に抗して前記ダイ
アフラムのメサ部の押圧を解除して前記貫通孔を開の状
態とするように構成したことを特徴とするものである。<Means for Solving the Problems> The structure of the present invention for solving the above problems is a first substrate made of SiSi single crystal, a second substrate made of Si single crystal or glass material, and the first substrate. A groove formed in at least one of the second substrate, a gas passage formed by the groove formed by laminating the first and second substrates, a semiconductor gas sensor arranged in the middle of the passage, and the gas A through hole formed in the second substrate so as to be in communication with a passage and sandwiching the semiconductor gas sensor, and the first hole at a position facing the through hole.
A diaphragm having a mesa portion at the center formed by etching the surface of the substrate, and the first substrate from the second substrate side.
A piezoelectric element provided so as to extend toward the substrate side so as to be in contact with the mesa portion of the diaphragm and an actuator made of an elastic member are provided, and when the piezoelectric element is not energized, elasticity of the elastic member causes the mesa portion of the diaphragm to move. When the piezoelectric element is pressed, the through hole is closed, and when the piezoelectric element is energized, the pressing of the mesa portion of the diaphragm is released against the elasticity of the elastic member to open the through hole. It is characterized by being configured in.
〈実施例〉 第１図（ａ），（ｂ），（ｃ）は本考案の一実施例を
示すもので（ａ）は平面図，（ｂ）は（ａ）のＡ−Ａ断
面図，（ｃ）は（ａ）図のＢ−Ｂ断面拡大図である。こ
れらの図において,1はシリコン単結晶からなる第１の基
板であり，このシリコン基板にはエッチングにより中心
にメサ部6a,6bを有するダイアフラム3a,3bが形成され，
これらのダイアフラムを形成する凹部に連通してエッチ
ングによりガス通路である溝７が形成されている。２は
パイレックスガラス等からなる第２の基板で，メサ部6
a,6bの中心位置に合わせて流体の出入口となる貫通孔9
a,9bおよび測定ガス，基準ガスの導入口となる筒体10a,
10bが固定されている。また，第1,第２の基板は陽極接
合により重ねて固定されている。30はガス通路７（溝）
の途中に配置された半導体ガスセンサ,31はスパッタ，
蒸着等によりSi基板上に配置されたヒータである（この
ヒータはガスセンサの機能維持に寄与するものであり，
ガスセンサに一体に設けてもよい）。<Embodiment> FIGS. 1 (a), (b) and (c) show an embodiment of the present invention, wherein (a) is a plan view, (b) is a sectional view taken along line AA of (a), (C) is an enlarged view taken along line BB of (a). In these figures, 1 is the first substrate made of silicon single crystal, and the diaphragms 3a, 3b having the mesas 6a, 6b in the center are formed on this silicon substrate by etching,
Grooves 7 serving as gas passages are formed by etching in communication with the recesses forming these diaphragms. 2 is a second substrate made of Pyrex glass or the like, and has a mesa 6
Through hole 9 serving as a fluid inlet / outlet according to the center position of a and 6b
a, 9b and a cylindrical body 10a which serves as an inlet for measuring gas and reference gas,
10b is fixed. In addition, the first and second substrates are fixed by overlapping by anodic bonding. 30 is gas passage 7 (groove)
, A semiconductor gas sensor placed in the middle of
A heater placed on the Si substrate by vapor deposition, etc. (This heater contributes to maintaining the function of the gas sensor.
It may be provided integrally with the gas sensor).
なお，第１の基板の厚さは0.3mm,第２の基板の厚さは
0.4mm程度であり，ダイアフラムの厚さｔは50μm,メサ
部と第２の基板の間隔は６μｍ程度（図示せず）であ
る。The thickness of the first board is 0.3mm and the thickness of the second board is
It is about 0.4 mm, the thickness t of the diaphragm is 50 μm, and the distance between the mesa portion and the second substrate is about 6 μm (not shown).
ダイアフラム3a,3bの近傍には第1,第２の基板を貫通
する孔11a,11bが形成され，第２の基板２側にその孔を
覆って断面コ字状の支持部材23a,23bが接着などにより
固定される。Holes 11a and 11b penetrating the first and second substrates are formed near the diaphragms 3a and 3b, and support members 23a and 23b having a U-shaped cross section are bonded to the second substrate 2 side so as to cover the holes. It is fixed by.
28a,28b（第１図Ｃ参照）は支持部材23aの内面に固定
されたスプリング支持部材で，このスプリング支持部材
の中央部にはピエゾアクチュエータ（以下，単にアクチ
ュエータという）が長手方向に出入り可能な孔12が形成
されており，その孔の周囲に複数のスプリング26の一端
が係止されている。スプリングの他端はスプリング支持
部材28bに係止され，この支持部材28bにはその中央に貫
通孔が設けられ，アクチュエータ5aの外周が固定されて
いる。29aは押圧部材で，断面コ字状に形成されその一
端がアクチュエータに固定され，他端は第１の基板の裏
面からメサ部6aに接触している。25a,25bは支持部材の
頂部に設けられアクチュエータの位置を調整する規制手
段（押しねじ）である。Reference numerals 28a and 28b (see FIG. 1C) are spring supporting members fixed to the inner surface of the supporting member 23a, and a piezoelectric actuator (hereinafter simply referred to as an actuator) can move in and out in the central portion of the spring supporting member. A hole 12 is formed, and one end of a plurality of springs 26 is locked around the hole. The other end of the spring is locked by a spring support member 28b, and a through hole is provided in the center of this support member 28b, and the outer periphery of the actuator 5a is fixed. A pressing member 29a is formed in a U-shaped cross section, one end of which is fixed to the actuator, and the other end of which is in contact with the mesa portion 6a from the back surface of the first substrate. 25a and 25b are regulation means (pushing screws) provided on the top of the support member for adjusting the position of the actuator.
なお，アクチュエータの断面は4.2mm2，長さ9mm程度
とされ,150Vの直流電圧印加により８μｍ程度変位す
る。６はアクチュエータに5aに電圧を印加するための電
源である。The actuator has a cross section of 4.2 mm 2 and a length of about 9 mm, and is displaced by about 8 μm when a DC voltage of 150 V is applied. 6 is a power source for applying a voltage to the actuator 5a.
上記構成において，通常（ノーマリクローズ）状態に
おいてはアクチュエータ5aはスプリングにより第２の基
板側へ引寄せられており，押圧部材29aの一端が第１の
基板の裏面からメサ部6aを押圧し第２の基板に設けられ
た孔9aを閉塞している。この場合，流体の最大圧力が印
加されても漏れが発生しない様に押しねじ25aによりア
クチュエータ5aの位置が調整されている。次にアクチュ
エータ5aの電源をオンとすればアクチュエータがスプリ
ングの力に抗して伸長し，メサ部が閉塞していた孔9aは
開となり，ノーマリクローズのバルブとなる。In the above configuration, in the normal (normally closed) state, the actuator 5a is attracted to the second substrate side by the spring, and one end of the pressing member 29a presses the mesa portion 6a from the back surface of the first substrate and The hole 9a provided in the second substrate is closed. In this case, the position of the actuator 5a is adjusted by the push screw 25a so that the leakage does not occur even if the maximum pressure of the fluid is applied. Next, when the power of the actuator 5a is turned on, the actuator extends against the force of the spring, the hole 9a in which the mesa portion is closed is opened, and the valve becomes a normally closed valve.
上記構成によれば流路の開閉を行うアクチュエータと
してピエゾ素子を用いたのでバルブを開閉する切換スイ
ッチを小形化することが可能となり，溝をエッチングに
より形成したのでガス流路を小形化することが出来る。
また，ノーマリクローズのバルブを用いたので測定時の
みアクチュエータを駆動させればよく，アクチュエータ
の機能劣化を防止することが出来，長寿命の装置を実現
することが出来る。According to the above configuration, since the piezo element is used as the actuator for opening and closing the flow path, the changeover switch for opening and closing the valve can be downsized, and since the groove is formed by etching, the gas flow path can be downsized. I can.
Further, since the normally closed valve is used, it is sufficient to drive the actuator only at the time of measurement, the functional deterioration of the actuator can be prevented, and a device with a long life can be realized.
第２図は他の実施例を示す断面図で第１図と同一要素
には同一符号を付してある。この実施例においては第１
図で示すガス通路７の途中を閉塞し，パイレックスガラ
ス（第２の基板）の上に第３のSi単結晶基板32,第４のS
i単結晶基板33が積層されている。パイレックスガラス
には第３の貫通孔9c,第４の貫通孔9dが形成され，第３
の基板の貫通孔9cの位置する部分には貫通孔9eが形成さ
れている。第４の基板にはガス通路7bおよび第１の基板
に形成したと同様のメサ部6c,ダイアフラム3cが形成さ
れており，このメサ部が形成された第４の基板の裏面に
はコ字状の支持部材23が接着等により固定されている。
5cはピエゾ素子からなるアクチュエータで一端が押しね
じ25cの端部に，他端がメサ部6cの底部に接して保持さ
れており，これら支持部材23c,アクチュエータ5c,ダイ
アフラム3c,メサ部6cでマイクロポンプ35が形成されて
いる。7cは第２の基板に形成されたガス通路である。FIG. 2 is a sectional view showing another embodiment, and the same elements as those in FIG. 1 are designated by the same reference numerals. In this embodiment, the first
The gas passage 7 shown in the figure is closed in the middle, and the third Si single crystal substrate 32 and the fourth S are placed on the Pyrex glass (second substrate).
The i single crystal substrates 33 are stacked. The Pyrex glass has a third through hole 9c and a fourth through hole 9d,
A through hole 9e is formed in the portion of the substrate where the through hole 9c is located. A gas passage 7b and a mesa portion 6c and a diaphragm 3c similar to those formed on the first substrate are formed on the fourth substrate. The back surface of the fourth substrate on which the mesa portion is formed is U-shaped. The support member 23 is fixed by adhesion or the like.
5c is an actuator composed of a piezo element, one end of which is held by the end of the push screw 25c and the other end of which is held in contact with the bottom of the mesa portion 6c. A pump 35 is formed. 7c is a gas passage formed in the second substrate.
34a,34bは逆止弁で，第３〜第５図に示す工程により
作製する。なお，製作工程図は概略して示す。The check valves 34a and 34b are manufactured by the steps shown in FIGS. The manufacturing process diagram is shown schematically.
工程１ ｐ型シリコン基板（ここでは第３の基板32）の一方に
SiO2膜50を円状に形成する。Process 1 On one side of the p-type silicon substrate (here, the third substrate 32)
The SiO 2 film 50 is formed in a circular shape.
工程２ SiO2膜50の上にCVD法を用いてその円よりも大きな形
状の円でポリシリコン51を形成する。Step 2 Polysilicon 51 is formed on the SiO 2 film 50 by a CVD method in a circle having a shape larger than the circle.
工程３ ポリシリコン51を含む基板全体にSiO2膜52を形成する
（以上，第３図参照）。Step 3 A SiO 2 film 52 is formed on the entire substrate including the polysilicon 51 (see FIG. 3 above).
工程４ ポリシリコンを形成した側の裏面のSiO2の一部を取除
きに異方性エッチングにより貫通孔９を形成する。Step 4 The through hole 9 is formed by anisotropic etching by removing a part of SiO 2 on the back surface on the side where the polysilicon is formed.
工程５ ポリシリコン側のSiO252を第４図（ａ）で示すような
扇型53を対向して４個配置した形状に取除く。Step 5 The SiO 2 52 on the polysilicon side is removed into a shape in which four fan shapes 53 are arranged facing each other as shown in FIG. 4 (a).
工程６ その扇型状に取除いた箇所をエッチング液に浸しポリ
シリコン51をエッチングする（以上，第４図参照）。Step 6 The portion removed in a fan shape is immersed in an etching solution to etch the polysilicon 51 (see FIG. 4 above).
工程７ SiO250および52を取除いて逆止弁54を形成する（第５
図（ａ），（ｂ）参照） 第２図に戻って動作を説明する。いま，アクチュエー
タ5a,5bをオンとして貫通孔9a,9bを開とする。更にマイ
クロポンプ35を矢印方向に所定の周期で上下させる。そ
の結果アクチュエータ5cが上方に移動した場合は逆止弁
34aは開，逆止弁34bは閉となる。その結果ガス導入口か
ら測定ガスまたは基準ガスがガス通路7bまで導入され
る。Step 7 Remove SiO 2 50 and 52 to form check valve 54 (fifth
(Refer to FIGS. (A) and (b)) Returning to FIG. 2, the operation will be described. Now, the actuators 5a and 5b are turned on and the through holes 9a and 9b are opened. Further, the micro pump 35 is moved up and down in the direction of the arrow at a predetermined cycle. As a result, if the actuator 5c moves upward, the check valve
34a is open and the check valve 34b is closed. As a result, the measurement gas or the reference gas is introduced from the gas introduction port to the gas passage 7b.
次にアクチュエータ5cが下方に移動すると逆止弁34a
は閉,34bが開となりガスはガス通路7cに押出されその通
路内に配置された半導体ガスセンサ，貫通孔9d,9aを経
て排出される。Next, when the actuator 5c moves downward, the check valve 34a
Is closed and 34b is opened, and the gas is extruded into the gas passage 7c and discharged through the semiconductor gas sensor and the through holes 9d and 9a arranged in the passage.
この様なガスセンサは例えば有害なガスの漏れを遠隔
地から自動的に検出する様な場合に適している。Such a gas sensor is suitable, for example, when a leak of harmful gas is automatically detected from a remote place.
第６図はアクチュエータ部の他の実施例を示す断面図
で，この例においては支持部材23全体が恒弾性材料（例
えば商品名ナイスパン−Ｃ）で形成され，底部のアクチ
ュエータを支持する部分の一部40を薄肉としてダイアフ
ラムを形成したものであり，この例によれば第１図に比
較して部品点数が少なくなることが出来る。FIG. 6 is a cross-sectional view showing another embodiment of the actuator section. In this example, the entire support member 23 is made of a constant elastic material (for example, the product name Nispan-C), and one of the parts supporting the actuator at the bottom is shown. The diaphragm is formed by making the portion 40 thin, and according to this example, the number of parts can be reduced as compared with FIG.
なお，基板，バルブ，アクチュエータの形状は図示の
例に限ることなく適宜変更可能である。The shapes of the substrate, the valve, and the actuator are not limited to the illustrated examples, and can be changed as appropriate.
〈考案の効果〉 以上，実施例とともに具体的に説明したように本考案
によればSi単結晶からなる第１の基板と,Si単結晶若し
くはガラス材からなる第２の基板と，前記第1,第２基板
の少なくとも一方に形成された溝と，前記第1,第２の基
板を張り合わせて前記溝により形成されたガス通路と，
この通路の途中に配置された半導体式ガスセンサと，前
記ガス通路に連通し前記半導体式ガスセンサを挟んで前
記第２の基板に形成された貫通孔と，該貫通孔に対向す
る位置に前記第１の基板の表面をエッチングして形成さ
れた中心にメサ部を有するダイアフラムと，前記第２基
板側から前記第１基板側に延長され前記ダイアフラムの
メサ部に接する様に設けられたピエゾ素子と弾性部材か
らなるアクチュエータとを具備し，前記ピエゾ素子に通
電しない状態では前記弾性部材の弾性により前記ダイア
フラムのメサ部を押圧して前記貫通孔を閉の状態とし，
前記ピエゾ素子に通電した状態では前記弾性部材の弾性
に抗して前記ダイアフラムのメサ部の押圧を解除して前
記貫通孔を開の状態とするように構成したので，弁開閉
機構を小形化することができ，ガスセンサとして使用す
る状態においてのみピエゾ素子に通電して貫通孔を開閉
し，使用しない状態ではガス通路内に例えば基準ガスを
導入して弾性部材により貫通孔を閉の状態にすることに
よりセンサの中にゴミや湿気が侵入するのを防止するこ
とが出来る。<Effect of the Invention> As described above in detail with reference to the embodiments, according to the present invention, the first substrate made of Si single crystal, the second substrate made of Si single crystal or glass, and the first substrate A groove formed in at least one of the second substrates and a gas passage formed by the grooves formed by bonding the first and second substrates together,
A semiconductor gas sensor disposed in the middle of this passage, a through hole formed in the second substrate so as to communicate with the gas passage and sandwiching the semiconductor gas sensor, and the first gas sensor at a position facing the through hole. A diaphragm having a mesa portion at the center formed by etching the surface of the substrate, and a piezo element extending from the second substrate side to the first substrate side and provided in contact with the mesa portion of the diaphragm. An actuator made of a member, and when the piezoelectric element is not energized, the elasticity of the elastic member presses the mesa portion of the diaphragm to close the through hole,
When the piezo element is energized, the pressure of the mesa portion of the diaphragm is released against the elasticity of the elastic member to open the through hole, so that the valve opening / closing mechanism is downsized. It is possible to energize the piezo element to open and close the through hole only when it is used as a gas sensor, and to introduce the reference gas into the gas passage to close the through hole by the elastic member when not used. This makes it possible to prevent dust and moisture from entering the sensor.
第１図（ａ），（ｂ），（ｃ）は本考案の一実施例を示
す断面構成図，第２図は他の実施例を示す断面構成図，
第３図，第４図，第５図は逆止弁の概略製作工程図，第
６図はアクチュエータ部の他の実施例を示す断面図であ
る。 1,2,32,33……第１〜第４の基板,3a〜3c……ダイアフラ
ム,5a〜5c……ピエゾアクチュエータ,6a〜6c……メサ
部,7……溝（ガス通路）,9a〜9f……貫通孔,30……半導
体ガスセンサ,31……ヒータ。1 (a), (b), and (c) are cross-sectional structural views showing an embodiment of the present invention, and FIG. 2 is a cross-sectional structural view showing another embodiment.
FIGS. 3, 4, and 5 are schematic manufacturing process diagrams of the check valve, and FIG. 6 is a sectional view showing another embodiment of the actuator section. 1,2,32,33 …… first to fourth substrate, 3a to 3c …… diaphragm, 5a to 5c …… piezo actuator, 6a to 6c …… mesa part, 7 …… groove (gas passage), 9a ~ 9f …… Through hole, 30 …… Semiconductor gas sensor, 31 …… Heater.
Claims (1)
若しくはガラス材からなる第２の基板と，前記第1,第２
基板の少なくとも一方に形成された溝と，前記第1,第２
の基板を張り合わせて前記溝により形成されたガス通路
と，この通路の途中に配置された半導体式ガスセンサ
と，前記ガス通路に連通し前記半導体式ガスセンサを挟
んで前記第２の基板に形成された貫通孔と，該貫通孔に
対向する位置に前記第１の基板の表面をエッチングして
形成された中心にメサ部を有するダイアフラムと，前記
第２基板側から前記第１基板側に延長され前記ダイアフ
ラムのメサ部に接する様に設けられたピエゾ素子と弾性
部材からなるアクチュエータとを具備し，前記ピエゾ素
子に通電しない状態では前記弾性部材の弾性により前記
ダイアフラムのメサ部を押圧して前記貫通孔を閉の状態
とし，前記ピエゾ素子に通電した状態では前記弾性部材
の弾性に抗して前記ダイアフラムのメサ部の押圧を解除
して前記貫通孔を開の状態とするように構成したことを
特徴とするマイクロシステムガスセンサ。1. A first substrate made of Si single crystal, a second substrate made of Si single crystal or a glass material, and the first and second substrates.
A groove formed in at least one of the substrates, and the first and second
Formed on the second substrate by sandwiching the semiconductor type gas sensor between the gas passage formed by adhering the substrates of the above-mentioned substrate and the groove, the semiconductor type gas sensor arranged in the middle of the passage, and the gas passage. A through hole, a diaphragm having a mesa portion at the center formed by etching the surface of the first substrate at a position facing the through hole, and extending from the second substrate side to the first substrate side A piezoelectric element provided so as to be in contact with the mesa portion of the diaphragm and an actuator made of an elastic member are provided, and when the piezoelectric element is not energized, the elasticity of the elastic member presses the mesa portion of the diaphragm and the through hole. Is closed, and when the piezoelectric element is energized, the pressing of the mesa portion of the diaphragm is released against the elasticity of the elastic member to open the through hole. Microsystem gas sensor, characterized by being configured such that a state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988140411U JPH082592Y2 (en) | 1988-10-27 | 1988-10-27 | Micro system gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988140411U JPH082592Y2 (en) | 1988-10-27 | 1988-10-27 | Micro system gas sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0260863U JPH0260863U (en) | 1990-05-07 |
| JPH082592Y2 true JPH082592Y2 (en) | 1996-01-29 |
Family
ID=31404554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988140411U Expired - Lifetime JPH082592Y2 (en) | 1988-10-27 | 1988-10-27 | Micro system gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH082592Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5212286B2 (en) * | 2009-07-09 | 2013-06-19 | 富士電機株式会社 | Thin film gas sensor and method of manufacturing thin film gas sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2619003B2 (en) * | 1988-08-05 | 1997-06-11 | 株式会社東芝 | Oxygen detecting element and method for manufacturing the same |
-
1988
- 1988-10-27 JP JP1988140411U patent/JPH082592Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0260863U (en) | 1990-05-07 |
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