JPH08250532A - Manufacture of composite adhesive sheet - Google Patents

Manufacture of composite adhesive sheet

Info

Publication number
JPH08250532A
JPH08250532A JP7050213A JP5021395A JPH08250532A JP H08250532 A JPH08250532 A JP H08250532A JP 7050213 A JP7050213 A JP 7050213A JP 5021395 A JP5021395 A JP 5021395A JP H08250532 A JPH08250532 A JP H08250532A
Authority
JP
Japan
Prior art keywords
heat
adhesive
resistant
adhesive sheet
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7050213A
Other languages
Japanese (ja)
Other versions
JP3411709B2 (en
Inventor
Shuichi Matsuura
秀一 松浦
Naoto Ota
直人 太田
Yoshihide Iwasaki
良英 岩崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP05021395A priority Critical patent/JP3411709B2/en
Publication of JPH08250532A publication Critical patent/JPH08250532A/en
Application granted granted Critical
Publication of JP3411709B2 publication Critical patent/JP3411709B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73215Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

PURPOSE: To increase an anti-package crack property and wettability by a method wherein heat-resistant adhesive varnish consisting of heat-resistant resin and polynadiimide is applied on a heat resistant film and then the film is heated and dried with a specified amount of residual solvent and extrusion length. CONSTITUTION: This composite sheet is an adhesive member to be used in manufacturing a semiconductor package by a method wherein a semiconductor chip is adhered to a lead frame with an adhesive and at least the semiconductor chip and adhered sections between the semiconductor chip and the lead frame are sealed with sealing material. Heat-resistant adhesive varnish which consists of heat-resistant resin and polynadiimide is applied on a heat-resistant film and then is dried with an amount of residual solvent 2% or below and a sticking-out length 1μm-2mm. The composite adhesive sheet manufactured by this method can increase the formability of a semiconductor package without deteriorating in an anti-package crack property at the time of solder reflow after the semiconductor package has absorbed moisture.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体チップをリード
フレームに接着するに際し、特に適する接着部材として
の複合接着シートの製造法に関する。特に、本発明は、
半導体パッケージ、特にLOC(Lead on Chip)構造パッ
ケージにおいて、吸湿後のはんだリフロー時の耐パッケ
ージクラック性が優れ、かつ成形性も良好な耐熱性接着
剤を使用した接着部材としての複合接着シートの製造法
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a composite adhesive sheet as an adhesive member particularly suitable for adhering a semiconductor chip to a lead frame. In particular, the invention is
Manufacture of a composite adhesive sheet as an adhesive member using a heat-resistant adhesive having excellent package crack resistance during solder reflow after moisture absorption and good moldability in semiconductor packages, particularly LOC (Lead on Chip) structure packages Concerning the law.

【0002】[0002]

【従来の技術】従来、半導体用リードフレームとチップ
の接続には、エポキシ系の熱硬化性接着剤や耐熱性ホッ
トメルト接着剤が使用されていた。近年、チップが大き
くなるにつれ、パッケージ中に占めるチップの割合が高
くなってきた。そのため接着剤や封止材が吸湿した場
合、はんだ接続時の熱により吸湿された水分が膨張し、
その結果パッケージにクラックが生じる現象が多発する
ようになった。この現象を防止するため、接着剤を高温
で流れ難くすることも考えられるが、接着剤を流れ難く
すると耐パッケージクラック性は良くなるが、リードフ
レームやチップに対する濡れ性が悪くなる。
2. Description of the Related Art Conventionally, epoxy-based thermosetting adhesives and heat-resistant hot-melt adhesives have been used for connecting semiconductor lead frames and chips. In recent years, as the size of chips has increased, the percentage of chips in the package has increased. Therefore, when the adhesive or sealing material absorbs moisture, the absorbed moisture expands due to the heat during solder connection,
As a result, the phenomenon that cracks are generated in the package has frequently occurred. In order to prevent this phenomenon, it is possible to make the adhesive hard to flow at high temperature. However, if the adhesive is hard to flow, the package crack resistance is improved, but the wettability to the lead frame and the chip is deteriorated.

【0003】[0003]

【発明が解決しようとする課題】本発明は、耐パッケー
ジクラック性に優れるうえに、リードフレームやチップ
に対する濡れ性にも優れた耐熱性接着剤を使用した接着
部材である複合接着シートの製造法を提供するものであ
る。
DISCLOSURE OF THE INVENTION The present invention provides a method for producing a composite adhesive sheet which is an adhesive member using a heat-resistant adhesive which is excellent in package crack resistance and also excellent in wettability to lead frames and chips. Is provided.

【0004】[0004]

【課題を解決するための手段】本発明は、半導体チップ
をリードフレームに接着部材で接着し、少なくとも半導
体チップ、半導体チップとリードフレームの接着部を封
止材で封止して半導体パッケージを製造するための接着
部材としての複合シートであって、耐熱性樹脂とポリナ
ジイミドを含んでなる耐熱性接着剤ワニスを耐熱フィル
ム上に塗布した後、残存溶剤量2%以下、はみ出し長さ
1μm〜2mmとなるように加熱乾燥することを特徴と
する複合接着シートの製造法を提供するものである。
According to the present invention, a semiconductor package is manufactured by adhering a semiconductor chip to a lead frame with an adhesive member and sealing at least the semiconductor chip and an adhesive portion between the semiconductor chip and the lead frame with a sealing material. Which is a composite sheet as an adhesive member for applying a heat-resistant adhesive varnish containing a heat-resistant resin and polynadiimide on a heat-resistant film, and the residual solvent amount is 2% or less, and the protrusion length is 1 μm to 2 mm. The present invention provides a method for producing a composite adhesive sheet, which comprises heating and drying so that

【0005】本発明において、用いられる特定の接着剤
のうち耐熱性樹脂成分は、ガラス転移温度150〜35
0℃、吸水率3%以下、はみ出し長さ2mm以下のもの
が好ましい。材料はポリアミド、ポリイミド、その他の
エンジニアリングプラスチック等、特に制限はないが、
ポリアミドおよびポリイミドが好ましい。ここでポリイ
ミドとはポリアミドイミド、ポリエステルイミド、ポリ
エーテルイミド等のイミド基を有する樹脂を含む。
Among the specific adhesives used in the present invention, the heat resistant resin component has a glass transition temperature of 150 to 35.
It is preferably 0 ° C., a water absorption rate of 3% or less, and a protrusion length of 2 mm or less. There are no particular restrictions on the material, such as polyamide, polyimide, and other engineering plastics,
Polyamides and polyimides are preferred. Here, the polyimide includes a resin having an imide group such as polyamideimide, polyesterimide, and polyetherimide.

【0006】ガラス転移温度は好ましくは170〜30
0℃、より好ましくは200〜290℃である。樹脂の
流動性を表すはみ出し長さは2mm以下、好ましくは1
mm以下、より好ましくは0.5mm以下である。はみ
出し長さは19×50mm、厚さ25μmの接着剤フィ
ルムを350℃、3MPa、1分の条件でプレスした
際、はみ出た接着剤の長さを長辺方向の中央部で測定し
て、はみ出し長さとする。ガラス転移温度が200℃よ
り低い場合、あるいは、はみ出し長さが1mmより多い
場合には吸水率が1.5wt%より少ないことが望まし
い。
The glass transition temperature is preferably 170-30.
0 degreeC, More preferably, it is 200-290 degreeC. The protruding length, which represents the fluidity of the resin, is 2 mm or less, preferably 1
mm or less, more preferably 0.5 mm or less. When an adhesive film with a protruding length of 19 × 50 mm and a thickness of 25 μm is pressed under the conditions of 350 ° C., 3 MPa, and 1 minute, the protruding length of the adhesive is measured at the central portion in the long side direction, and the protruding amount Let it be the length. When the glass transition temperature is lower than 200 ° C. or when the protruding length is more than 1 mm, it is desirable that the water absorption rate is less than 1.5 wt%.

【0007】本発明に用いられる耐熱性樹脂成分は、ポ
リイミドまたはポリアミド単独でも良いが、接着力の点
からはアミド基を含むほうが良い。アミド基はイミド基
及びアミド基の合計の10〜90モル%が良く、好まし
くは20〜70モル%、より好ましくは30〜50モル
%である。10%より少ないと接着力が小さく、90%
より多いと吸水率が大きくなる。
The heat-resistant resin component used in the present invention may be polyimide or polyamide alone, but preferably contains an amide group from the viewpoint of adhesive strength. The amide group is preferably 10 to 90 mol%, preferably 20 to 70 mol%, and more preferably 30 to 50 mol% of the total of the imide group and the amide group. If it is less than 10%, the adhesive strength is small, and 90%
The higher the amount, the higher the water absorption.

【0008】本発明に用いられる耐熱性樹脂成分は、酸
無水物またはジカルボン酸またはそのアミド形成性誘導
体とジアミンまたはジイソシアネートとから合成され
る。本発明において用いられるジアミンとしては、パラ
フェニレンジアミン、メタフェニレンジアミン、メタト
ルイレンジアミン、4,4’−ジアミノジフェニルエー
テル(DDE)、4,4’−ジアミノジフェニルメタ
ン、4,4’−ジアミノジフェニルスルホン、3,3’
−ジアミノジフェニルスルホン、4,4’−ジアミノベ
ンゾフェノン、3,3’−ジアミノベンゾフェノン、
1,4−ビス(4−アミノクミル)ベンゼン(BA
P)、1,3−ビス(4−アミノクミル)ベンゼン、
1,3−ビス(3−アミノフェノキシ)ベンゼン、1,
4−ビス(3−アミノフェノキシ)ベンゼン、1,4−
ビス(4−アミノフェノキシ)ベンゼン、2,2−ビス
[4−(4−アミノフェノキシ)フェニル]プロパン
(BAPP)、2,2−ビス[4−(3−アミノフェノ
キシ)フェニル]プロパン、ビス[4−(3−アミノフ
ェノキシ)フェニル]スルホン(m−APPS)、ビス
[4−(4−アミノフェノキシ)フェニル]スルホン、
2,2−ビス[4−(4−アミノフェノキシ)フェニ
ル]ヘキサフルオロプロパン、および
The heat-resistant resin component used in the present invention is synthesized from acid anhydride or dicarboxylic acid or its amide-forming derivative and diamine or diisocyanate. Examples of the diamine used in the present invention include paraphenylenediamine, metaphenylenediamine, metatoluylenediamine, 4,4′-diaminodiphenyl ether (DDE), 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylsulfone, 3,3 '
-Diaminodiphenyl sulfone, 4,4'-diaminobenzophenone, 3,3'-diaminobenzophenone,
1,4-bis (4-aminocumyl) benzene (BA
P), 1,3-bis (4-aminocumyl) benzene,
1,3-bis (3-aminophenoxy) benzene, 1,
4-bis (3-aminophenoxy) benzene, 1,4-
Bis (4-aminophenoxy) benzene, 2,2-bis [4- (4-aminophenoxy) phenyl] propane (BAPP), 2,2-bis [4- (3-aminophenoxy) phenyl] propane, bis [ 4- (3-aminophenoxy) phenyl] sulfone (m-APPS), bis [4- (4-aminophenoxy) phenyl] sulfone,
2,2-bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, and

【化1】の一般式(1)で表されるジアミン、A diamine represented by the general formula (1):

【化2】の一般式(2)で表されるシロキサンジアミン
等が挙げられる。
Examples thereof include siloxane diamines represented by the general formula (2) shown below.

【0009】[0009]

【化1】 〔化1においてYは、アミノ基またはイソシアネート基
を示し、R11、R12、R13、R14はそれぞれ独立に水素
もしくは炭素数の1〜4のアルキル基またはアルコキシ
基であって、これらのうち少なくとも2個以上はアルキ
ル基またはアルコキシ基であり、Xは−CH2 −、−C
(CH3 2 −、−O−、−SO2 −、−CO−または
−NHCO−で表される基である。
Embedded image [In Chemical Formula 1, Y represents an amino group or an isocyanate group, and R 11 , R 12 , R 13 and R 14 each independently represent hydrogen or an alkyl group having 1 to 4 carbon atoms or an alkoxy group, out at least two is an alkyl or alkoxy group, X is -CH 2 -, - C
(CH 3) 2 -, - O -, - SO 2 -, - is a group represented by CO- or -NHCO-.

【0010】[0010]

【化2】 〔化2においてR15およびR18は、2価の有機基、R16
およびR17は1価の有機基であり、mは1〜100の整
数である。〕
Embedded image [In Chemical Formula 2, R 15 and R 18 are a divalent organic group, R 16
And R 17 are monovalent organic groups, and m is an integer of 1 to 100. ]

【0011】上記一般式(2)で表されるシロキサンジ
アミンにおいて、一般式(2)中のR15およびR18とし
てはそれぞれ独立にトリメチレン基、テトラメチレン
基、フェニレン基、トルイレン基等があり、R16および
17としてはそれぞれ独立にメチル基、エチル基、フェ
ニル基等があり、複数個のR16および複数個のR17はそ
れぞれ同一でも異なっていてもよい。一般式(2)にお
いて、R15およびR18がどちらもトリメチレン基であ
り、R16およびR17がどちらもメチル基である場合に、
mが1のもの、平均10前後のもの、平均20前後のも
の、平均30前後のもの、平均50前後のものおよび平
均100前後のものは、それぞれLPー7100、X−
22−161AS,X−22−161A、X−22−1
61B、X−22−161CおよびX−22−161E
(いずれも信越化学工業株式会社商品名)として市販さ
れている。ジイソシアネートとしては、上記に例示した
ジアミンにおいて、アミノ基をイソシアネート基に換え
たものを例示することができる。
In the siloxanediamine represented by the general formula (2), R 15 and R 18 in the general formula (2) each independently include a trimethylene group, a tetramethylene group, a phenylene group, a toluylene group, and the like. R 16 and R 17 each independently include a methyl group, an ethyl group, a phenyl group, and the like, and a plurality of R 16 and a plurality of R 17 may be the same or different. In the general formula (2), when R 15 and R 18 are both trimethylene groups, and R 16 and R 17 are both methyl groups,
LP-7100 and X- are those for which m is 1, about 10 on average, about 20 on average, about 30 on average, about 50 on average, and about 100 on average, respectively.
22-161AS, X-22-161A, X-22-1
61B, X-22-161C and X-22-161E
(Both products are trade names of Shin-Etsu Chemical Co., Ltd.). Examples of the diisocyanate include diamines exemplified above in which an amino group is replaced with an isocyanate group.

【0012】酸無水物としては、無水トリメリット酸、
ピロメリット酸二無水物、3,3’,4,4’−ベンゾ
フェノンテトラカルボン酸二無水物(BTDA)、3,
3’,4,4’−ビフェニルテトラカルボン酸二無水
物、2,2−ビスフタル酸ヘキサフルオロイソプロピリ
デン二無水物、ビス(3,4−ジカルボキシフェニル)
エーテル二無水物、ビス(3,4−ジカルボキシフェニ
ル)スルホン二無水物(DSDA)、4,4’−ビス
(3,4−ジカルボキシフェノキシ)ジフェニルスルホ
ン二無水物、2,2−ビス[4−(3,4−ジカルボキ
シフェノキシ)フェニル]プロパン二無水物、エチレン
グリコールビストリメリテート二無水物(EBTA)、
デカメチレングリコールビストリメリテート二無水物
(DBTA)、ビスフェノールAビストリメリテート二
無水物(BABT)、2,2−ビス[4−(3,4−ジ
カルボキシフェニルベンゾイルオキシ)フェニル]ヘキ
サフルオロプロパン二無水物、4,4’−[1,4−フ
ェニレンビス(1−メチルエチリデン)]ビスフェニル
ビストリメリテート二無水物等が挙げられる。これらの
なかでは、無水トリメリット酸、DSDAが好ましい。
ジカルボン酸またはそのアミド形成性誘導体としては、
テレフタル酸、イソフタル酸、ビフェニルカルボン酸、
フタル酸、ナフタレンジカルボン酸、ジフェニルエーテ
ルジカルボン酸等があり、これらのジカルボン酸のアミ
ド形成性誘導体としては、これらのジカルボン酸のジク
ロリド、ジアルキルエステル等がある。また、ジアミ
ン、ジカルボン酸の一部をアミノ安息香酸等のアミノカ
ルボン酸で置き換えてもよい。
As the acid anhydride, trimellitic anhydride,
Pyromellitic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride (BTDA), 3,
3 ', 4,4'-biphenyltetracarboxylic dianhydride, 2,2-bisphthalic acid hexafluoroisopropylidene dianhydride, bis (3,4-dicarboxyphenyl)
Ether dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride (DSDA), 4,4′-bis (3,4-dicarboxyphenoxy) diphenylsulfone dianhydride, 2,2-bis [ 4- (3,4-dicarboxyphenoxy) phenyl] propane dianhydride, ethylene glycol bistrimellitate dianhydride (EBTA),
Decamethylene glycol bis trimellitate dianhydride (DBTA), bisphenol A bis trimellitate dianhydride (BABT), 2,2-bis [4- (3,4-dicarboxyphenylbenzoyloxy) phenyl] hexafluoropropane di An anhydride, 4,4 ′-[1,4-phenylenebis (1-methylethylidene)] bisphenylbistrimellitate dianhydride and the like can be mentioned. Of these, trimellitic anhydride and DSDA are preferable.
As the dicarboxylic acid or its amide-forming derivative,
Terephthalic acid, isophthalic acid, biphenylcarboxylic acid,
There are phthalic acid, naphthalene dicarboxylic acid, diphenyl ether dicarboxylic acid and the like, and amide-forming derivatives of these dicarboxylic acids include dichloride and dialkyl ester of these dicarboxylic acids. Further, a part of the diamine or dicarboxylic acid may be replaced with an aminocarboxylic acid such as aminobenzoic acid.

【0013】これらのジアミン、酸無水物、ジカルボン
酸の中から、得られる樹脂のTgが150℃以上になる
ようにモノマーを適宜選択すればよい。ポリイミドとポ
リアミドを混合する場合には、混合後の接着剤のTgが
150℃以上になればよい。ポリイミドはポリアミド酸
の熱または化学閉環によって得られる。本発明において
用いられるワニスは、必ずしも100%イミド化されて
いなくてもよいが、完全にイミド化されていることが望
ましい。
From these diamines, acid anhydrides and dicarboxylic acids, the monomer may be appropriately selected so that the Tg of the resin obtained is 150 ° C. or higher. When polyimide and polyamide are mixed, the Tg of the adhesive after mixing may be 150 ° C. or higher. Polyimides are obtained by thermal or chemical ring closure of polyamic acids. The varnish used in the present invention does not necessarily have to be 100% imidized, but is preferably completely imidized.

【0014】本発明において用いられるポリナジイミド
としては、N,N’−(4,4’−ジフェニルメタン)
ビスナジイミド、N,N’−(4,4’−ジフェニルオ
キシ)ビスナジイミド、N,N’−ヘキサメチレンビス
ナジイミド、N,N’−m−ベンジリデンビスナジイミ
ド、オリゴ(アニリン−ホルムアルデヒド)樹脂のポリ
ナジイミド、N,N’−(4,4’−ジフェニルメタ
ン)ビスアリルナジイミド、N,N’−ヘキサメチレン
ビスアリルナジイミド、N,N’−m−ベンジリデンビ
スアリルナジイミド等があり、単一でまたは二種以上混
合して使用される。
The polynadiimide used in the present invention is N, N '-(4,4'-diphenylmethane).
Bisnadiimide, N, N '-(4,4'-diphenyloxy) bisnadiimide, N, N'-hexamethylenebisnadiimide, N, N'-m-benzylidenebisnadiimide, oligo (aniline-formaldehyde) resin polynadiimide, N , N ′-(4,4′-diphenylmethane) bisallylnadiimide, N, N′-hexamethylenebisallylnadiimide, N, N′-m-benzylidenebisallylnadiimide, etc. Used as a mixture of two or more species.

【0015】耐熱性樹脂とポリナジイミドの混合割合
は、目的に応じて適宜決定されるが、ポリナジイミドを
耐熱性樹脂100重量部に対して、5〜180重量部で
用いるのが好ましい。ポリナジイミドが少なすぎると流
動性および硬化が十分でなく、多すぎると樹脂組成物が
脆くなる。特に自己支持性のフィルムを製造する場合、
可とう性を十分保有させる点で、ポリナジイミドは耐熱
性樹脂100重量部に対して、100重量部以下の割合
で用いるのが特に好ましい。
The mixing ratio of the heat resistant resin and the polynadiimide is appropriately determined according to the purpose, but it is preferable to use the polynadiimide in an amount of 5 to 180 parts by weight based on 100 parts by weight of the heat resistant resin. If the amount of polynadiimide is too small, the fluidity and curing will be insufficient, and if it is too large, the resin composition will become brittle. Especially when producing self-supporting films,
It is particularly preferable to use polynadiimide in a ratio of 100 parts by weight or less with respect to 100 parts by weight of the heat-resistant resin, from the viewpoint of sufficiently retaining flexibility.

【0016】本発明において用いられる接着剤には、ポ
リナジイミドの硬化促進剤やエポキシ樹脂、硬化剤、硬
化促進剤等を添加して用いてもよい。またセラミック
粉、ガラス粉、銀粉、銅粉等のフィラーやカップリング
剤を添加してもよい。
The adhesive used in the present invention may be added with a curing accelerator for polynadiimide, an epoxy resin, a curing agent, a curing accelerator or the like. Further, a filler such as ceramic powder, glass powder, silver powder, copper powder or a coupling agent may be added.

【0017】本発明の複合接着シートは、表面処理した
耐熱フィルムの片側または両側に耐熱性樹脂と、ポリナ
ジイミドを含んでなる耐熱性接着剤ワニスを塗布した
後、加熱することによって得られる。
The composite adhesive sheet of the present invention is obtained by applying a heat-resistant adhesive varnish containing a heat-resistant resin and polynadiimide to one or both sides of a surface-treated heat-resistant film, and then heating.

【0018】本発明において用いられる耐熱フィルム
は、ポリイミド、ポリアミドや、ポリサルフォン、ポリ
フェニレンサルファイド、ポリエーテルエーテルケト
ン、ポリアリレート等のエンジニアリングプラスチック
等のフィルムが挙げられるが、ガラス転移温度(T
g)、吸水率、熱膨張係数の点からポリイミドフィルム
が好ましい。Tgが250℃以上、吸水率が2%以下、
熱膨張係数が3×10-5℃-1以下のフィルムが特に好ま
しい。
Examples of the heat-resistant film used in the present invention include polyimide, polyamide, and engineering plastics such as polysulfone, polyphenylene sulfide, polyether ether ketone, and polyarylate, which have a glass transition temperature (T
From the viewpoint of g), water absorption and thermal expansion coefficient, a polyimide film is preferable. Tg is 250 ° C or higher, water absorption is 2% or lower,
A film having a coefficient of thermal expansion of 3 × 10 -5 ° C -1 or less is particularly preferable.

【0019】耐熱フィルムは、接着剤との接着力を増す
ために表面処理が必要である。表面処理の方法として
は、アルカリ処理、シランカップリング処理等の化学処
理、サンドブラスト等の物理処理、プラズマ処理、コロ
ナ処理等のいずれの処理も使用可能であるが、接着剤の
種類に応じて最も適した処理を用いればよい。本発明の
接着剤については、化学処理またはプラズマ処理が特に
適している。
The heat-resistant film needs a surface treatment in order to increase the adhesive force with the adhesive. As the surface treatment method, any treatment such as alkali treatment, chemical treatment such as silane coupling treatment, physical treatment such as sandblasting, plasma treatment, corona treatment, etc. can be used, but the most suitable treatment depends on the type of adhesive. Any suitable process may be used. Chemical treatments or plasma treatments are particularly suitable for the adhesives according to the invention.

【0020】耐熱性接着剤ワニスを耐熱フィルムに塗布
する方法は、特に制限はない。ドクターブレードやナイ
フコーター、ダイコーター等いずれの方法で塗布しても
よい。また、ワニス中にフィルムを通して塗工してもよ
いが、厚みの制御が難しいので好ましくはない。接着剤
を塗布したフィルムを溶剤の除去やイミド化のために熱
処理するが、加熱温度はポリアミド酸ワニスであるかポ
リイミドワニスであるかで異なる。ポリアミド酸ワニス
の場合には、イミド化させるためにTg以上の温度が必
要であるが、イミドワニスの場合には、溶剤が除去でき
る温度であればよい。加熱温度は使用溶剤、添加ポリナ
ジイミドの種類等によって異なるが、残存溶剤量2%以
下、はみ出し長さ1μm〜2mmとなるように加熱乾燥
することが必要である。残存溶剤量が2%より多いと貼
りつけ時に発泡が起り、好ましくない。また、はみ出し
長さが2mmより多いと耐パッケージクラック性が悪く
なり、1μmより少ないと濡れが不十分となる。残存溶
剤量は、厚さ25μmの接着剤単独フィルムを250℃
で30分加熱乾燥した前後の重量減少から算出する。接
着剤と耐熱フィルムの接着力を向上させるためには、2
50℃以上の温度で熱処理することが好ましい。
The method for applying the heat resistant adhesive varnish to the heat resistant film is not particularly limited. It may be applied by any method such as a doctor blade, a knife coater or a die coater. Further, a film may be applied through the varnish, but it is not preferable because it is difficult to control the thickness. The film coated with the adhesive is heat-treated to remove the solvent and imidize, but the heating temperature differs depending on whether it is a polyamic acid varnish or a polyimide varnish. In the case of a polyamic acid varnish, a temperature of Tg or higher is required for imidization, but in the case of an imide varnish, it may be a temperature at which the solvent can be removed. The heating temperature varies depending on the solvent used, the type of the added polynadiimide, etc., but it is necessary to heat and dry so that the residual solvent amount is 2% or less and the protruding length is 1 μm to 2 mm. If the amount of the residual solvent is more than 2%, foaming occurs during sticking, which is not preferable. If the protrusion length is more than 2 mm, the package crack resistance is poor, and if it is less than 1 μm, the wetting becomes insufficient. The amount of residual solvent is 250 ° C for an adhesive single film with a thickness of 25 μm.
It is calculated from the weight loss before and after heating and drying for 30 minutes. To improve the adhesive strength between the adhesive and the heat resistant film, 2
It is preferable to perform heat treatment at a temperature of 50 ° C. or higher.

【0021】本発明の複合接着シートは、リードフレー
ム、セラミック板、金属板、金属箔、プラスチックフィ
ルム、プラスチック板、積層板等の被着体に重ねるか、
被着体の間に挟んで接着剤の溶融温度以上の温度で加
熱、加圧することによって接着される。
The composite adhesive sheet of the present invention is laminated on an adherend such as a lead frame, a ceramic plate, a metal plate, a metal foil, a plastic film, a plastic plate or a laminated plate, or
It is bonded by being sandwiched between adherends and heated and pressed at a temperature equal to or higher than the melting temperature of the adhesive.

【0022】[0022]

【実施例】【Example】

実施例1 攪拌機、温度計、窒素ガス導入管、塩化カルシウム管を
備えた四つ口フラスコに、ビス[4−(4−アミノフェ
ノキシ)フェニル]スルホン(p−APPS)を4.3
2g(10ミリモル)およびN,Nージメチルホルムア
ミド(DMF)23.7gを入れ、溶解した。次に、5
℃を越えないように冷却しながらビス(3,4−ジカル
ボキシフェニル)スルホン二無水物(DSDA)3.5
8g(10ミリモル)、を少しずつ加えた後、5℃を越
えないように冷却しながら1時間、次いで、室温で6時
間反応させてポリアミド酸を合成した。得られたポリア
ミド酸のワニスに無水酢酸2.55gおよびピリジン
1.98gを加え、室温で3時間反応させてポリイミド
を合成した。得られたポリイミドのワニスを水に注いで
得られる沈殿を分離、粉砕、乾燥してポリイミド粉末を
得た。このポリイミド粉末をDMFに0.1g/dlの
濃度で溶解し、30℃で測定したときの還元粘度は0.
87dl/gであった。このポリイミド粉末をDMFに
溶解し、得られたワニスをガラス板上に流延した。10
0℃で10分乾燥した後、剥離し、鉄枠にとめて250
℃で1時間乾燥してフィルムを得た。このようにして得
られたフィルムを用いて、ペネトレーション法により、
荷重25kg/cm2 、昇温速度10℃/分の条件で、
ポリイミドのガラス転移温度(Tg)を測定したところ
270℃であった。フィルムを25℃の水中に24時間
浸漬したときの吸水率は、2.3%であった。19×5
0mm、厚さ25μmの接着剤フィルムを350℃、3
MPa、1分の条件でプレスし、はみ出た接着剤の長さ
を長辺方向の中央部で測定したはみ出し長さは0.01
mmであった。上記ポリイミド粉末100gとN,N’
−ヘキサメチレンビスアリルナジイミド50gをNMP
400gに溶解して得たワニスをプラズマ処理したユー
ピレックスSフィルム(宇部興産(株)製ポリイミドフ
ィルム)上に塗布した後、100℃で10分、さらに2
75℃で10分乾燥して複合接着シートを得た。この複
合接着シートのはみ出し長さは0.6mmで、残存溶剤
量は0.2%であった。この複合接着シートを接着部材
として用いて、375℃、3MPdaの条件で、図1の
ように半導体チップをリードフレームに貼りつけたとこ
ろ、リードフレームやチップに対する接着剤の濡れは十
分であった。なお、封止材でモールドしたパッケージを
85℃、85%RHの条件で48h吸湿処理した後、2
45℃の赤外線炉で、はんだリフローを行ったところク
ラックは発生しなかった。図1に於いて、1は接着部
材、2は半導体チップ、3はリードフレーム、4はワイ
ヤ、5は封止材である。
Example 1 A four-necked flask equipped with a stirrer, a thermometer, a nitrogen gas inlet tube, and a calcium chloride tube was charged with bis [4- (4-aminophenoxy) phenyl] sulfone (p-APPS) at 4.3.
2 g (10 mmol) and 23.7 g of N, N-dimethylformamide (DMF) were added and dissolved. Next, 5
Bis (3,4-dicarboxyphenyl) sulfone dianhydride (DSDA) 3.5 with cooling so as not to exceed ℃
8 g (10 mmol) was added little by little, and the mixture was allowed to react for 1 hour while cooling so as not to exceed 5 ° C. and then for 6 hours at room temperature to synthesize a polyamic acid. To the obtained polyamic acid varnish, 2.55 g of acetic anhydride and 1.98 g of pyridine were added and reacted at room temperature for 3 hours to synthesize a polyimide. The obtained polyimide varnish was poured into water, and the obtained precipitate was separated, pulverized and dried to obtain a polyimide powder. This polyimide powder was dissolved in DMF at a concentration of 0.1 g / dl, and the reduced viscosity when measured at 30 ° C. was 0.
It was 87 dl / g. This polyimide powder was dissolved in DMF, and the resulting varnish was cast on a glass plate. 10
After drying at 0 ° C for 10 minutes, peel it off, fix it on an iron frame, and set it to 250
A film was obtained by drying at 0 ° C. for 1 hour. Using the film thus obtained, by the penetration method,
With a load of 25 kg / cm 2 and a heating rate of 10 ° C./min,
The glass transition temperature (Tg) of the polyimide was measured and found to be 270 ° C. The water absorption rate when the film was immersed in water at 25 ° C. for 24 hours was 2.3%. 19 x 5
0mm, 25μm thick adhesive film at 350 ℃, 3
The length of the protruding adhesive was measured at the center of the long side by pressing under a condition of MPa for 1 minute, and the protruding length was 0.01.
mm. 100 g of the above polyimide powder and N, N '
-NMP of 50 g of hexamethylenebisallylnadiimide
The varnish obtained by dissolving in 400 g was applied on a plasma-treated Upilex S film (polyimide film manufactured by Ube Industries, Ltd.), and then at 100 ° C. for 10 minutes, and further 2
It was dried at 75 ° C for 10 minutes to obtain a composite adhesive sheet. The protruding length of this composite adhesive sheet was 0.6 mm, and the residual solvent amount was 0.2%. When this composite adhesive sheet was used as an adhesive member and a semiconductor chip was attached to a lead frame as shown in FIG. 1 under the conditions of 375 ° C. and 3 MPa, the wetness of the adhesive to the lead frame and the chip was sufficient. In addition, after the package molded with the sealing material is subjected to moisture absorption treatment at 85 ° C. and 85% RH for 48 hours, 2
When solder reflow was performed in an infrared oven at 45 ° C., no crack was generated. In FIG. 1, 1 is an adhesive member, 2 is a semiconductor chip, 3 is a lead frame, 4 is a wire, and 5 is a sealing material.

【0023】比較例1 N,N’−ヘキサメチレンビスアリルナジイミドを添加
せずに、実施例1のポリイミドのみを用いて、実施例1
と同様にして複合接着シートを作製した。この複合接着
シートを接着部材として用いて実施例1と同様にして貼
りつけたところ、リードフレームやチップに対する接着
剤の濡れは不十分であった。なお、400℃で貼りつけ
た後、モールドしたパッケージを実施例1と同様にし
て、はんだリフローを行ったところクラックは発生しな
かった。
Comparative Example 1 Example 1 was prepared using only the polyimide of Example 1 without adding N, N′-hexamethylenebisallylnadiimide.
A composite adhesive sheet was produced in the same manner as in. When this composite adhesive sheet was used as an adhesive member and adhered in the same manner as in Example 1, the wetness of the adhesive to the lead frame and the chips was insufficient. It should be noted that no crack was generated when solder reflow was performed on the molded package in the same manner as in Example 1 after sticking at 400 ° C.

【0024】実施例2 4,4’−ジアミノ−3,3’,5,5’−テトライソ
プロピルジフェニルメタン(IPDDM)1.83g
(5ミリモル)、2,2−ビス[4−(4−アミノフェ
ノキシ)フェニル]プロパン(BAPP)2.05g
(5ミリモル)をNMP30gに溶解し、トリエチルア
ミン0.50g(5ミリモル)を添加した後、5℃以下
に冷やしながら無水トリメリット酸クロリド2.14g
(10ミリモル)を少しづつ添加した。5℃以下で5時
間反応した後、無水酢酸、ピリジンを添加して実施例1
と同様にしてポリアミドイミド粉末を得た。このポリア
ミドイミドの還元粘度は0.57dl/g,Tgは250℃
であった。また、吸水率は1.0%で、はみ出し長さは
0.3mmであった。N,N’−(4,4’−ジフェニ
ルメタン)ビスアリルナジイミド30gを用い、300
℃で10分乾燥する以外は、実施例1と同様にして複合
接着シートを作製した。この複合接着シートのはみ出し
長さは0.6mmで、残存溶剤量は0.05%であっ
た。この複合接着シートを接着部材として用いて、実施
例1と同様にして半導体チップをリードフレームに貼り
つけたところ、接着剤の濡れは十分であった。なお、封
止材でモールドしたパッケージを実施例1と同様に、は
んだリフローを行ったところクラックは発生しなかっ
た。
Example 2 1.83 g of 4,4'-diamino-3,3 ', 5,5'-tetraisopropyldiphenylmethane (IPDDM)
(5 mmol), 2,2-bis [4- (4-aminophenoxy) phenyl] propane (BAPP) 2.05 g
(5 mmol) was dissolved in 30 g of NMP, 0.50 g (5 mmol) of triethylamine was added, and then trimellitic anhydride chloride 2.14 g was added while cooling to 5 ° C or lower.
(10 mmol) was added in small portions. After reacting at 5 ° C. or lower for 5 hours, acetic anhydride and pyridine were added to Example 1
Polyamideimide powder was obtained in the same manner as. This polyamideimide has a reduced viscosity of 0.57 dl / g and a Tg of 250 ° C.
Met. The water absorption was 1.0%, and the protruding length was 0.3 mm. Using 30 g of N, N '-(4,4'-diphenylmethane) bisallylnadiimide, 300
A composite adhesive sheet was produced in the same manner as in Example 1 except that it was dried at 0 ° C for 10 minutes. The protruding length of this composite adhesive sheet was 0.6 mm, and the residual solvent amount was 0.05%. Using this composite adhesive sheet as an adhesive member, a semiconductor chip was attached to a lead frame in the same manner as in Example 1, and the wetting of the adhesive was sufficient. When a package molded with a sealing material was subjected to solder reflow in the same manner as in Example 1, no crack was generated.

【0025】実施例3 ジアミン成分としてBAPP3.69g(9ミリモ
ル)、LP−7100を0.25g(1ミリモル)を用
いる以外は、実施例2と同様にしてポリアミドイミドを
得た。このポリアミドイミドの還元粘度は0.80dl
/g、Tgは215℃であった。また、吸水率は1.5
%で、はみ出し長さは0.4mmであった。上記ポリア
ミドイミド粉末100gとN,N’−(4,4’−ジフ
ェニルメタン)ビスアリルナジイミド30gをDMF4
00gに溶解して得たワニスをシランカップリング剤処
理したユーピレックスSフィルム上に塗布した後、10
0℃で10分、さらに275℃で10分乾燥して複合接
着シートを得た。この複合接着シートのはみ出し長さは
1.0mmで、残存溶剤量は0.15%であった。この
複合接着シートを接着部材として用いて、実施例1と同
様にして半導体チップをリードフレームに貼りつけたと
ころ、接着剤の濡れは十分であった。なお、封止材でモ
ールドしたパッケージを実施例1と同様に、はんだリフ
ローを行ったところクラックは発生しなかった。
Example 3 Polyamideimide was obtained in the same manner as in Example 2 except that 3.69 g (9 mmol) of BAPP and 0.25 g (1 mmol) of LP-7100 were used as the diamine component. The reduced viscosity of this polyamide-imide is 0.80 dl.
/ G, Tg was 215 ℃. The water absorption rate is 1.5
%, The protrusion length was 0.4 mm. 100 g of the above polyamideimide powder and 30 g of N, N ′-(4,4′-diphenylmethane) bisallylnadimide were added to DMF4.
The varnish obtained by dissolving it in 00 g was coated on the Upilex S film treated with the silane coupling agent, and then 10
It was dried at 0 ° C. for 10 minutes and further at 275 ° C. for 10 minutes to obtain a composite adhesive sheet. The protruding length of this composite adhesive sheet was 1.0 mm, and the residual solvent amount was 0.15%. Using this composite adhesive sheet as an adhesive member, a semiconductor chip was attached to a lead frame in the same manner as in Example 1, and the wetting of the adhesive was sufficient. When a package molded with a sealing material was subjected to solder reflow in the same manner as in Example 1, no crack was generated.

【0026】実施例4 N,N’−m−ベンジリデンビスアリルナジイミドを2
0g用いる以外は、実施例3と同様にして複合接着シー
トを得た。この複合接着シートのはみ出し長さは0.7
mmで、残存溶剤量は0.15%であった。この複合接
着シートを接着部材として用いて、実施例1と同様にし
て半導体チップをリードフレームに貼りつけたところ、
接着剤の濡れは十分であった。なお、封止材でモールド
したパッケージを実施例1と同様に、はんだリフローを
行ったところクラックは発生しなかった。
Example 4 N, N'-m-benzylidene bisallylnadimide was used as 2
A composite adhesive sheet was obtained in the same manner as in Example 3 except that 0 g was used. The protruding length of this composite adhesive sheet is 0.7.
The residual solvent amount was 0.15% in mm. Using this composite adhesive sheet as an adhesive member, a semiconductor chip was attached to a lead frame in the same manner as in Example 1,
Wetting of the adhesive was sufficient. When a package molded with a sealing material was subjected to solder reflow in the same manner as in Example 1, no crack was generated.

【0027】[0027]

【発明の効果】本発明の複合接着シートは、半導体パッ
ケージの吸湿後のはんだリフロー時の耐パッケージクラ
ック性を悪化させることなく、成形性を改善できる。
INDUSTRIAL APPLICABILITY The composite adhesive sheet of the present invention can improve the moldability without deteriorating the package crack resistance during solder reflow after moisture absorption of the semiconductor package.

【図面の簡単な説明】[Brief description of drawings]

【図1】半導体パッケージの断面図である。FIG. 1 is a cross-sectional view of a semiconductor package.

【符号の説明】[Explanation of symbols]

1 接着部材 2 半導体チップ 3 リードフレーム 4 ワイヤ 5 封止材 1 Adhesive member 2 Semiconductor chip 3 Lead frame 4 Wire 5 Encapsulating material

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 C09J 7/02 JKP C09J 7/02 JKP JLE JLE 179/08 JGE 179/08 JGE ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical display location C09J 7/02 JKP C09J 7/02 JKP JLE JLE 179/08 JGE 179/08 JGE

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】半導体チップをリードフレームに接着部材
で接着し、少なくとも半導体チップ、半導体チップとリ
ードフレームの接着部を封止材で封止して、半導体パッ
ケージを製造するための接着部材としての複合接着シー
トであって、耐熱性樹脂とポリナジイミドを含んでなる
耐熱性接着剤ワニスを耐熱フィルム上に塗布した後、残
存溶剤量2%以下、はみ出し長さ1μm〜2mmとなる
ように加熱乾燥することを特徴とする複合接着シートの
製造法。
1. A bonding member for manufacturing a semiconductor package by bonding a semiconductor chip to a lead frame with an adhesive member and sealing at least the semiconductor chip and a bonding portion between the semiconductor chip and the lead frame with a sealing material. A composite adhesive sheet, in which a heat-resistant adhesive varnish containing a heat-resistant resin and polynadiimide is applied on a heat-resistant film, and then dried by heating so that the residual solvent amount is 2% or less and the protruding length is 1 μm to 2 mm. A method for producing a composite adhesive sheet, comprising:
【請求項2】耐熱性樹脂が、ガラス転移温度150〜3
50℃、吸水率3%以下、はみ出し長さ2mm以下の耐
熱性樹脂であることを特徴とする請求項1記載の複合接
着シートの製造法。
2. The heat-resistant resin has a glass transition temperature of 150 to 3
The method for producing a composite adhesive sheet according to claim 1, which is a heat-resistant resin having a water absorption of 3% or less at 50 ° C. and a protrusion length of 2 mm or less.
JP05021395A 1995-03-09 1995-03-09 Manufacturing method of composite adhesive sheet Expired - Fee Related JP3411709B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05021395A JP3411709B2 (en) 1995-03-09 1995-03-09 Manufacturing method of composite adhesive sheet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05021395A JP3411709B2 (en) 1995-03-09 1995-03-09 Manufacturing method of composite adhesive sheet

Publications (2)

Publication Number Publication Date
JPH08250532A true JPH08250532A (en) 1996-09-27
JP3411709B2 JP3411709B2 (en) 2003-06-03

Family

ID=12852819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05021395A Expired - Fee Related JP3411709B2 (en) 1995-03-09 1995-03-09 Manufacturing method of composite adhesive sheet

Country Status (1)

Country Link
JP (1) JP3411709B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001064618A (en) * 1999-08-25 2001-03-13 Hitachi Chem Co Ltd Adhesive film for semiconductor, lead frame provided with adhesive film for semiconductor and semiconductor device using the same
JP2002267024A (en) * 2001-03-07 2002-09-18 Mitsubishi Cable Ind Ltd Oil seal
JP2007227950A (en) * 2000-01-19 2007-09-06 Hitachi Chem Co Ltd Adhesive film for semiconductor, lead frame with adhesive film for semiconductor, and semiconductor device using same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001064618A (en) * 1999-08-25 2001-03-13 Hitachi Chem Co Ltd Adhesive film for semiconductor, lead frame provided with adhesive film for semiconductor and semiconductor device using the same
JP2007227950A (en) * 2000-01-19 2007-09-06 Hitachi Chem Co Ltd Adhesive film for semiconductor, lead frame with adhesive film for semiconductor, and semiconductor device using same
JP2002267024A (en) * 2001-03-07 2002-09-18 Mitsubishi Cable Ind Ltd Oil seal

Also Published As

Publication number Publication date
JP3411709B2 (en) 2003-06-03

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