JPH08250496A - Ion beam machining device - Google Patents

Abstract

PURPOSE: To locally form a film in an arbitrary direction with an ion beam by rotating X- and Y-direction ion beam scanning signals in an ion beam scanning signal generating route by means of a scanning direction rotating signal generating section which rotationally transforms the coordinates of the scanning signals so that the scanning signals can scan while the signals are deflected in an arbitrary direction. CONSTITUTION: Secondary charge particles discharged from the surface of a sample 9 are detected and converted into luminance signals by means of a secondary charged particle detector and inputted to a display 12 together with scanning signals from a scan control section 13. The display 12 displays a secondary charged particle image. The position where a metallic pattern film is to be formed on the sample 9 is searched from the image. Then a scanning direction rotating signal generating section 15 which rotationally transforms the coordinates of X- and Y-direction scanning signals rotationally moves the secondary charged particle image and a scanning extent setting section 14 sets the area in which the metallic pattern film is to be formed and performs film forming work. Thus a local film can be formed in an arbitrary direction with an ion beam.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion beam processing apparatus for finely processing a sample surface while scanning and irradiating an ion beam. As a type of processing, for example, when a metal pattern film for wiring or light shielding is additionally formed on a semiconductor device or an exposure photomask (including an X-ray mask) (hereinafter, this processing is simply referred to as film formation).
It is also used when removing unnecessary wiring or unnecessary adhesion patterns.

[0002]

2. Description of the Related Art Conventionally, an ion beam emitted from a liquid metal ion source (for example, gallium is used as an ionic material) is focused in a spot shape by a focusing lens system and irradiated with a raster scan using a scanning electrode to process a sample surface. For example, an ion beam processing apparatus for forming a film has been known. In this case, the ion beam scanning direction was only the XY coordinate axis direction. For example, when two IC wirings 201 covered with a protective film as shown in FIG. 2 are exchanged, as shown in FIG. 4, a process (hereinafter referred to as drilling) 301 for removing the protective film and exposing the underlying wiring is performed twice. The film forming 302 and the wiring cutting (hereinafter referred to as cutting) 303 were processed 4 times.

[0003]

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention As described above, since the ion beam scanning direction is constant in the related art,
For example, when a film is attached, the shape of the film formed is XY
Since there is a limit to only the coordinate axis direction, there are many cases where film deposition is performed twice for one wiring, which causes a problem of reducing the operating rate of the ion beam processing apparatus.

[0004]

SUMMARY OF THE INVENTION The present invention is an ion beam processing apparatus for irradiating an ion beam while scanning to process a sample surface, for example, for forming a film. By allowing deflection scanning in any direction of 360 °, it is possible to attach an ion beam local film not only in the X-Y coordinate axis direction but also in the oblique direction.
It provides a processing means in any direction of 0 °. The means is to rotate the scanning signals in the X and Y directions in the ion beam scanning signal generating path by a scanning direction rotation signal generating section for rotating coordinate conversion, and perform processing in any direction of 360 ° with the sample fixed. Is.

[0005]

FUNCTION The angle θ of the (x, y) coordinates on the XY coordinates
The coordinates (x ', y') after the rotational movement are given by the following equation. x ′ = x _COS θ−y _Sin θ y ′ = x _Sin θ + y _COS θ By converting the scanning signals in the X and Y directions so as to satisfy the above conversion formula, the ion beam is deflected according to the conversion formula. It In other words, by changing θ, 360
The ion beam scanning is performed in any direction.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described in detail below with reference to FIG. An ion source 1 emits an ion beam. For example, a gallium liquid metal ion source is used. Two
Is a condenser lens, which collects the generated and controlled ion beam from the ion beam generating power source / control unit 16 and the ion source 1. Reference numeral 3 denotes an upper deflection plate that largely refracts the ion beam that has passed through the condenser lens 2 by applying a voltage. This is because blanking of the ion beam is performed as necessary. A movable diaphragm 4 is movable in a direction orthogonal to the ion beam path. Reference numeral 5 denotes an astigmatism correction lens, which is a lens for performing astigmatism correction on the ion beam passing through the movable diaphragm 4 to obtain a perfect circular ion beam spot. An objective lens 6 is for forming an astigmatism-corrected spot of the ion beam on the surface of the sample 9. 7 is a scanning electrode, which is X and Y2
It consists of a pair of electrodes. The ion beam spot is raster-scanned on the sample to perform, for example, repair processing of a semiconductor device. Reference numeral 8 denotes a gas gun which blows, for example, hexacarbonyl metal vapor onto the film-attached portion of the semiconductor device. At the same time, a film is deposited by irradiating the film deposition site with an ion beam while metalizing the hexacarbonyl metal vapor. The secondary charged particles emitted from the surface of the sample 9 are detected by the secondary charged particle detector 10, amplified and processed by the signal amplification processing unit 11 to become a luminance signal, and displayed on the display 12 together with the scanning signal from the scanning control unit 13. The image is input and the secondary charged particle image is displayed. A position where a metal pattern film on the sample 9 is to be formed is found from this secondary charged particle image, the secondary charged particle image is rotationally moved by the scanning direction rotation signal generation unit 15, and the metal pattern is scanned by the scanning range setting unit 14. The region where the film is to be formed is set and the film forming process is performed. For example, when the replacement of the IC wiring 201 of FIG. 2 is realized by the method of the present invention, as shown in FIG.
01 twice and membraneing 302 three times and cut 303
The desired processing is completed by setting 2 times. Therefore, in the case of this example, the number of times of film formation is reduced by one by the present invention.

[0007]

As described above, according to the present invention, the scanning direction rotation signal generating section is interposed in the ion beam scanning signal generating path, and the secondary charged particle image is rotated and moved at an arbitrary angle, so that It is possible to attach a local ion beam film in any direction such as 360 °. As a result, the number of processing points can be reduced, which has the effect of improving the processing speed.

[Brief description of drawings]

FIG. 1 is a device configuration diagram showing an embodiment of the present invention.

FIG. 2 is a plan view of an example of IC wiring for realizing the method of the present invention.

FIG. 3 is a plan view of the wiring replacement processing example of FIG. 2 according to the present invention.

FIG. 4 is a plan view of an embodiment according to a conventional method of wiring replacement of FIG.

[Explanation of symbols]

 1 ion source 2 condenser lens 3 upper deflection plate 4 movable diaphragm 5 astigmatism correction lens 6 objective lens 7 scanning electrode 8 gas gun 9 sample 10 secondary charged particle detector 11 signal amplification processing unit 12 display 13 scanning control unit 14 scanning range Setting unit 15 Scanning direction rotation signal generating unit 16 Ion beam generating power source and control unit 201 IC wiring 301 Drilling location 302 Film attaching location 303 Cutting location

Claims (2)

[Claims] 1. A focusing lens system for focusing an ion beam emitted from an ion source, a scanning electrode for scanning and irradiating the focused ion beam on a predetermined region of a sample surface, and the ion beam irradiation. A secondary charged particle detector for detecting secondary charged particles, a display for displaying an image of the sample surface based on a signal from the secondary charged particle detector, and a display for displaying the image on the display. A scanning direction rotation signal generator for rotating the scanning direction of the ion beam based on the processed area of the sample surface, and to the sample surface based on the image of the display rotated by the scanning direction rotation signal generator An ion beam processing apparatus, comprising: a scanning range setting unit that sets the scanning area of 2. A focusing lens system for focusing an ion beam emitted from an ion source, a scanning electrode for scanning and irradiating the focused ion beam on a predetermined area of a sample surface, and a beam generated by the ion beam irradiation. A secondary charged particle detector for detecting secondary charged particles, a display for displaying an image of the sample surface based on a signal of the secondary charged particle detector, and a display for displaying the image on the display. A scanning direction rotation signal generator for rotating the scanning direction of the ion beam based on the processed area of the sample surface, and to the sample surface based on the image of the display rotated by the scanning direction rotation signal generator And a gas gun for spraying a metal compound vapor onto the sample surface. Ion beam processing equipment.