JPH08236062A - Sputtering device - Google Patents

Abstract

PURPOSE: To provide a sputtering device by which the occurrence of a failure in arcing and a film forming object can be prevented by forming at least a first magnet of a magnetic field generating means in an elliptic shape. CONSTITUTION: In a sputtering device 30, since an external magnetic field 90 of a magnetic field device 44 is selected in an elliptic ring shape and an internal magnetic field is selected in a circular ring shape, when the magnetic field device 44 rotates, a uniform magnetic field can be formed in a sputtering area 71. Therefore, local concentration of plasma can be effectively prevented, and overheat of a sensor mask can be more reliably prevented, and an excellent reflecting film can be formed on a board 70 of a work object.

Description

Detailed Description of the Invention

[0001]

[Table of Contents] The present invention will be described in the following order. Fields of Industrial Application Conventional Technology (FIGS. 7 to 9) Problems to be Solved by the Invention (FIGS. 7 to 9) Means for Solving the Problems Action Example (FIGS. 1 to 6)

[0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputter device, and is suitable for application to, for example, a sputter device used in a process of forming a reflection film of an optical disc.

[0003]

2. Description of the Related Art Conventionally, an optical disk such as a compact disk (CD) or a laser disk (LD) is a disk having a concavo-convex pattern formed on one surface (hereinafter referred to as a signal recording surface) according to a recording signal. It is manufactured by forming a shaped substrate using a transparent synthetic resin material such as polycarbonate, forming a reflective film on the surface of the concavo-convex pattern, and then laminating a protective film on the reflective film. .

Thus, in this type of optical disc, when a light beam is irradiated from the other surface side of the substrate, the light beam is reflected by the reflection film as reflected light corresponding to the uneven pattern of the substrate (and the reflection film). Therefore, a recording signal can be reproduced based on this reflected light.

By the way, in the manufacturing process of such an optical disc, the work of forming the reflection film is usually carried out by depositing a highly reflective substance (usually aluminum) on the signal recording surface of the substrate by sputtering using a dedicated sputtering device. It is done by.

FIG. 7 shows a conventionally proposed magnetron type sputter device 1 among such sputter devices. In this sputter device 1, a space area (for spattering) is provided inside the housing 2 ( Hereinafter, this will be referred to as a spattering region) 2A, and argon (Ar) gas can be introduced into the sputtering region 2A via the gas introducing portion 3.

On the upper part of the housing 2, a backing plate 5 is fixed via an insulating material 4 so as to close the spattering region 2A from the upper side. aluminum)
Is attached to the target 6.

A rod-shaped center mask 8 is attached to the center of the target 6 to prevent the reflection film from being formed on the center of the substrate 7 to be processed. A ring-shaped outer peripheral mask 9 for preventing a reflective film from being formed on the outer peripheral portion of the substrate 7 is attached to the.

Further, the target 6 is connected to the cathode power source (not shown) through the bolts 11 fitted in the backing plate 5 and the insulator 10 in sequence, while the housing 2 is grounded via the bolt 12. During operation, the target 6 and the center mask 8 act as an anode, and the surroundings of the other sputtering region 2A act as a cathode, so that the target 6 and the center mask 8 and the surroundings of the other sputtering region 2A are operated. A plasma is generated in the spattering region 2A by generating an electric discharge.

On the other hand, below the housing 2, there are arranged a carrying table 13, a pusher portion 14, and a substrate receiving portion 15 attached to the tip of the pusher portion 14, and processing carried by the carrying table 13 is carried out. The target substrate 7 is supported by the substrate receiving portion 15 and pushed up by the pusher portion 14, so that the substrate 7 is parallel to the lower surface of the target 6 and its signal recording surface has a center mask 8 and an outer peripheral mask 9.
It is arranged at a predetermined position (hereinafter referred to as a spattering position) so as to be in close contact with the respective lower surfaces of the.

Thus, with this sputter device, during operation,
Due to the plasma generated in the sputtering region 2A, Ar atoms supplied as Ar gas in the sputtering region 2A are ionized and collide with the target 6, so that aluminum atoms fly out from the surface of the target 6 and reach the sputtering position. It is deposited on the signal recording surface of a certain substrate 7. As a result, in this spatter device 1, various conditions such as spattering time are selected and
By adjusting the deposition amount of atoms, a reflective film having a desired thickness can be formed on the substrate 7 to be processed.

In this case, the sputter device 1 having such a configuration
Then, there is a problem that the kinetic energy of the Ar atom is given to the surface of the target 6 by the collision of the Ar atom, and the surface of the target 6 generates heat.

For this reason, in this kind of spatter device 1, normally, the backing plate 5 is provided with a water channel 5A having a predetermined shape as shown in FIGS. 8A and 8B, and the water channel 5A. Inside the inlet 5B or the outlet 5 via a water supplier 16 (FIG. 7) and a drainer not shown
The cooling water can be supplied or discharged from C, respectively.

Accordingly, in this type of spatter device 1,
The cooling water can cool the target 6 through the backing plate 5, and can suppress the temperature rise on the surface of the target 6 during the spattering. Further, in this type of sputtering device 1, usually, a ring-shaped first magnet 21 is provided above the backing plate 5, for example, on one surface of a plate-shaped yoke 20 as shown in FIGS. 9 (A) and 9 (B). A magnetic field device 23, which is concentrically fixed to a cylindrical second magnet 22, is arranged so as to be eccentrically connected to an output shaft 24 of a motor (not shown) as shown in FIG. Has been done.

Thus, in this type of sputtering device 1, the magnetic field device 23 forms a magnetic field in the sputtering region 2A to confine ionized Ar atoms in the magnetic field, thereby efficiently targeting the Ar atoms. The target 6 can be used efficiently by rotating the generated magnetic field with eccentricity while allowing the target 6 to collide with the surface.

[0016]

The magnetic field device 23 used in the sputter device 1 of this type has a ring-shaped outer magnet 21 (hereinafter referred to as an outer magnet 21). ) And a cylindrical inner magnet 2
2 (hereinafter referred to as the inner magnet 22), and the magnetic field peak generated by such a magnetic field device 23 is one point in each of the X direction and the Y direction as shown in FIG. 9C. There are only 2 points in total.

Therefore, in the sputter device 1 using such a magnetic field device 23, even if the magnetic field device 23 is eccentrically rotated as described above, a magnetic force peak always passes through the center of the spattering region 2A. Plasma is likely to concentrate at this location, and the center mask 8 and the substrate 7 are heated under severe operating conditions (for example, when operating in a short cycle or when the discharge output is high power). In addition, there are problems that arcing (abnormal discharge) of plasma occurs between the substrates 7, scratches or impurities adhere to the substrate 7.

As one method for solving such a problem, for example, cooling water is supplied to the inside of the center mask 8 as well as the backing plate 5 so that the center mask 8 and the substrate through the center mask 8 are provided. A method of cooling 7 to prevent overheating can be considered.

However, this type of spatter device 1 is usually used.
Then, since the water channel 5A (FIG. 8) of the backing plate 5 is formed only for the purpose of cooling the target 6, it is difficult to supply the cooling water to the center mask 8 through the backing plate 5. In addition, in this type of sputtering device 1, it is usually difficult to provide a special water channel for the center mask 8 because the magnetic field device is located immediately above the backing plate 5 as described above.

The present invention has been made in consideration of the above points, and it is an object of the present invention to propose a sputter device capable of practically sufficiently preventing the occurrence of defects in arcing and film forming objects.

[0021]

In order to solve such a problem, in the present invention, in a sputtering device, a ring-shaped first magnet for generating a magnetic field in a space region sandwiched between a target and a film forming object. At least the first magnet of the magnetic field generating means in which the ring-shaped second magnet is arranged inside is formed into an elliptical shape.

[0022]

By forming at least the first magnet of the magnetic field generating means into an elliptical shape, a magnetic field having a plurality of magnetic force peaks is formed in the space region object sandwiched between the target and the film formation target. It Therefore, the magnetic force peak of the magnetic field can be prevented from always passing through the center in the spatial region.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings.

In FIG. 1, reference numeral 30 denotes a magnetron type sputter device according to the embodiment as a whole, and includes a housing 31, a first outer frame block 32, a second outer frame block 33, a peripheral device 34, and a third outer frame. Inside the container 39 formed by sequentially stacking the block 35, the upper wall block 36, the motor mounting plate 37, and the upper surface plate 38, the backing plate 40, the target 4
1, a center mask 42, an outer peripheral mask 43, and a magnetic field device 44 are housed respectively.

In practice, in the case of this sputtering device, the backing plate 40 is fixed to the lower surface of the peripheral device 34 via the insulating material 50, and the doughnut-shaped target 41 made of a highly reflective material is provided on the lower surface of the supporting block 51. It is fixed by a screw 52 through.

At the center of the lower surface of the backing plate 40, as shown in FIG.
The cooling block 60 is fixed by a set screw 62 via an insulating material 61 made of Teflon so as to fit through the center hole of No. 1 and not to be electrically connected to the target 41 and the backing plate 40. A center mask 42 is fixed to the lower surface of the with a set screw 43.

On the other hand, as shown in FIG. 1, the outer peripheral mask 43 is screwed to the inner lower end of the housing 31, and the inner peripheral surface of the housing 31 and the upper surface of the outer peripheral mask 43 are integrally formed on the outer peripheral mask 43. Anti-adhesion shield 64 to cover
A wall block 65 is fixed to the inner upper end of the housing 31 so as to cover the housing 31 while avoiding the target 41.

Further, the housing 31 and the outer peripheral mask 43
A transport table 66, a pusher portion 67, and
A substrate receiving portion 68 attached to the tip of the pusher portion 67 is provided, and the substrate 70 to be processed which is sequentially transported by the transport table 66 is supported by the substrate receiving portion 68 and pushed up by the pusher portion 67. Thus, the substrate 70 can be set to the spattering set state.

Accordingly, in this sputtering device 30, the sputtering patterning region 71 is formed so as to be surrounded by the target 41, the barrier block 65, the deposition shield 64, the inner peripheral mask 43 and the substrate 70. Therefore, the housing 31
A gas introduction part 72 is provided on the peripheral side wall of
The outer peripheral mask 43 is provided with an exhaust port 43A so that Ar gas can be supplied into the spattering region 71 through the gas introduction portion 72 during operation, while unnecessary Ar gas is sputtered through the exhaust port 43A. It can be discharged to the outside of the area 71.

The target 41 is connected to the cathode power source through the backing plate 40 and the bolt 74 insulated from the container 39 by the insulator 73, and the container 39 is fixed to the upper wall block 36. Bolt 7
It is grounded via 5 so that in operation the target 41 can act as a cathode and the other periphery of the sputtering region 71 can act as an anode.

Thus, in this sputtering device 30, when a negative voltage is applied to the target 41 during operation, a discharge is generated between the target 41 and the surroundings of the sputtering region 71, and the sputtering region 7 is discharged.
Plasma is generated in the spatter device 1, and as a result, the sputtering device 1 of FIG.
In the same manner as in the above case, the reflection film can be formed on the substrate 70 set in the spattering state. At this time, the surface of the target 41 generates heat due to the kinetic energy given by the Ar atom when the ionized Ar atom collides as described above.

Therefore, in this sputtering device 30, the backing plate 40 is formed of a material having a high thermal conductivity such as copper, and the first water channel 40A having a predetermined shape as shown in FIG. 3 is formed therein. The cooling water can be supplied to or discharged from the inlet 40B or the outlet 40C in the first water passage 40A through the water supplier 80 (FIG. 1) and the drainer (not shown). As a result, in this sputtering device 30, the target 41 can be cooled through the backing plate 40 by the cooling water sequentially supplied to the backing plate 40 from the water supply device 80 (FIG. 1), and thus at the time of sputtering. The temperature rise on the surface of the target 41 in FIG.

On the other hand, a bearing 82 is attached to the inner peripheral portion of the upper wall block 36 so that the outer ring is fixedly held by the annular bearing holding block 81 and the motor mounting block 37, and the bearing 82 is also attached. A magnet mounting plate 83 having an elliptical concave portion 83A in the center is attached to the inner ring of the magnet mounting plate 83. It is installed.

In this case, the motor 85 is fixed on the motor mounting block 37 by inserting the tip of the output shaft into the recess 83A of the magnet mounting plate 83, and at the tip of the output shaft of the motor 85. Is fixed to a rectangular parallelepiped rotational force transmission plate 86 having rounded ends, and thus when the motor 85 is driven, the rotational force transmission plate 86 is rotated as the output shaft of the motor 85 rotates. The tip portion abuts on the inner peripheral surface of the recess 83A of the magnet mounting plate 83 and applies a rotational force to the magnet mounting plate 83, so that the magnetic field device 44 is eccentrically and smoothly integrated with the magnet mounting plate 83. It can be driven to rotate.

Therefore, in this spatter device 30, the motor 85 is driven to rotate the magnetic field device 44 during operation, whereby the magnetic field device 44 is moved to the spattering area 71.
The magnetic field generated therein can be rotated in the sputtering region 71, so that the magnetic field in the sputtering region 71 can be averaged and the utilization efficiency of the target 41 can be improved.

In the case of this embodiment, the housing 3
1 is provided with a water passage 31A so as to go around the inside thereof, and cooling water can be supplied to or discharged from the water passage 31A via a water injection port 31B and a drain port not shown. As a result, the housing 31 can be cooled as required.

In addition to the above construction, in the case of the sputtering device of this embodiment, as apparent from FIG. 3, the inside of the backing plate 40 is independent of the first water channel 40A and the outer periphery of the backing plate 40. Second extending from the center to the center
And the third water channels 40D and 40E are individually provided.

In this case, these second and third water channels 40
The inlets 40F and 40, which are respectively connected to the water supply device and the drainer (not shown), are provided at the respective ends located at the outer peripheral portions of D and 40E.
G is provided, and a through hole 40 communicating with the lower surface of the backing plate 40 is provided at each of the other ends located in the center.
J and 40J are provided respectively. Further, these through-holes 40H and 40J are provided in the insulating material 61 independently of the through-holes 61A and 6A, as is apparent from FIG.
Water reservoir 6 inside the cooling block 60 via 1B respectively
It is connected to 0A.

Therefore, in this spatter device 30,
The second water channel 40D and the through hole 4 provided in the backing plate 40 with respect to the water reservoir 60A of the cooling block 60.
0H and the through hole 61A provided in the insulating material 61 may be sequentially supplied to the cooling water, while the water reservoir 61A
Cooling water supplied to the through hole 61B of the insulating material 61, the through hole 40J of the backing plate 40, and the third water channel 4
And the center mask 42 which comes into contact with the cooling block 60 through the cooling block 60 through the cooling block 60. There is.

For this reason, in this sputtering device 30, the cooling block 60 is made of a material having a high thermal conductivity such as copper, so that the center mask 42 can be cooled efficiently.

Further, in the case of the sputtering device 30 of this embodiment, the magnetic field device 44, as shown in FIGS. 4A and 4B, has an outer magnet 90 formed in an elliptical ring shape and a circular ring shape. 2 and the inner magnet 91 formed on the yoke 92 are concentrically and integrally attached to the yoke 92. As a result, as shown in FIGS. 4 (C) and 4 (D), two points each in the X direction and the Y direction, In total, four magnetic field peaks having strength and weakness can be generated.

Therefore, in this sputtering device 30, a more uniform magnetic field space can be formed in the sputtering region 71 when the magnetic field device 44 is rotated, so that plasma can be prevented from concentrating in the central portion of the sputtering region 71. Thus, it is possible to prevent the center mask 42 from overheating.

In the above structure, the sputter device 3
At 0, cooling water is supplied to the backing plate 40 and the cooling block 60 during operation, so that the center mask 42 is cooled in addition to the target 41.
Therefore, in the sputtering device 30, it is possible to prevent the center mask 42 from overheating.

In this case, since the center mask 42 is cooled as an anode while being insulated from both the backing plate 40 and the target 41, arcing does not occur between the center mask 41 and the substrate 70.
Therefore, it is possible to prevent the substrate 70 from being damaged or heated.

Further, in this sputtering device 30, in addition to this, the outer magnet 90 (FIG. 4A) of the magnetic field device 44 is selected in an elliptical ring shape and the inner magnet 91 is selected in a circular ring shape. Therefore, it is possible to form a uniform magnetic field in the sputtering region 71 while the magnetic field device 44 is rotating. Therefore, local concentration of plasma can be effectively prevented, and thus overheating of the center mask 42 can be more reliably prevented.

Therefore, according to this sputtering device 30, in the conventional sputtering device 1 (FIG. 7), plasma arcing and a defect of the substrate 70 to be processed, which are easily caused by overheating of the center mask 8, are caused. This trouble can be prevented, and thus a good reflection film can be formed on the substrate 70 to be processed.

In practice, an experiment was conducted in which the substrate was sequentially sputtered with a cycle time of 2.0 [sec] and a sputter time of 1.5 [sec]. The center mask 42 was cooled while being cooled by the conventional cooling method. In this case, the temperature of the tip of the center mask 42 is 90 to 120 [°
C], while the surface of the substrate has reached 70 [° C], when the center mask 42 is cooled down by the cooling method according to the embodiment, the temperature of the tip portion of the center mask 42 increases.
40 to 50 [° C], and the surface of the substrate was 40 [° C].

At this time, arcing does not occur even when continuous sputtering is performed on 10000 substrates (in the conventional method,
0.1-0.2 [%] is generated) and film uniformity is 600 [Å]
Improved to ± 5 [%] (600 [Å] ± 10 with the conventional method)
[%]) Was confirmed. In addition, the target life can be improved by 20% compared to the conventional method, and it is possible to shoot 100,000 times with a spat time of 1.5 [sec].

According to the above construction, in the magnetron type sputtering device 30, the center mask 42 is attached to the backing plate via the cooling block 60 having the water reservoir 60A therein, and the inside of the cooling block 60 is backed up. Since the cooling water is sequentially supplied through the plate 42, the center mask 42
Thus, it is possible to realize a sputter device capable of preventing the overheating of the above, and thus sufficiently preventing the occurrence of the arcing and the defect of the substrate in practical use.

Also, a magnetron type sputter device 30.
In the above, by forming the outer magnet 90 of the magnetic field device 44 in an elliptical ring shape and the inner magnet 91 in a circular ring shape, it is possible to prevent local concentration of plasma in the spattering region 71. Thus, it is possible to realize a sputter device capable of practically sufficiently preventing the occurrence of arcing and substrate defects.

Therefore, by constructing the sputter device in this way, it is possible to cool a plurality of parts with a simple structure. Further, it is effective for forming a film of a thermal deformation material such as a disk (plastic), and further, it is possible to obtain the effect of improving the durability of the seal portion by preventing heating.

In the above embodiment, the magnetic field device 4
The case where the outer magnet 90 of No. 4 is formed in an elliptical ring shape and the inner magnet 91 is formed in a circular ring shape has been described, but the present invention is not limited to this and, for example, FIG.
Both the outer magnet 100 and the inner magnet 101 of the magnetic field device are selected to be elliptical ring shapes as shown in FIG. 5A, or the outer magnet 102 is selected to be elliptical ring shape as shown in FIG. 5B. On the other hand, the inner magnet 103 may be composed of two independent circular ring-shaped magnets 103A and 103B. The point is that the inner magnet 103 has magnetic force peaks at a plurality of points in the X direction and the Y direction, and has a center as much as possible. If the magnetic field device 44 can be formed so that the magnetic field can be generated in the sputtering region 71 while avoiding the mask 42, the outer shape of the outer magnet 90 and the inner magnet 91 can be various other shapes. Can be applied.

In addition, in the above-described embodiment, the insulator 61
However, the present invention is not limited to this, and the insulator 61 may be formed using another insulating material such as ceramic, plastic, or polyethylene.

Further, in the above-described embodiment, the magnetic field device 44 is formed as shown in FIG. 4, and the magnetic field device 44 is rotated with an eccentricity so that a uniform magnetic field can be generated in the sputtering region 71. However, the present invention is not limited to this. For example, the inner magnet 91 is fixed on the backing plate 40 via an insulator, and only the outer magnet 90 is mounted on the magnet mounting plate 83. The magnetic field device may be configured to rotate with an eccentricity based on the rotational force given by the above. Even in this case, the same effect as in the case of the embodiment can be obtained.

Further, in the above-mentioned embodiment, the case where the backing plate 40 is formed as shown in FIG. 3 has been described, but the present invention is not limited to this, and the point is that a plurality of backing plates are provided inside the backing plate. Various other structures can be applied as the structure of the backing plate as long as the water channels are formed independently and the cooling water is supplied to the predetermined objects to be cooled through the respective water channels.

Here, for example, FIGS. 6A and 6B show an example of the structure of a baking plate in which a plurality of water channels are provided independently of each other. The target (not shown) attached and the three water-cooled blocks 130 to 132 can be cooled at the same time.

That is, the backing plate 120 is provided therein with a first water passage 120A through which cooling water for cooling the target flows, and the cooling water is supplied into the first water passage through an inlet 120B. The cooling water can be discharged to the outside of the backing plate 120 via the outlet 120C.

Further, inside the backing plate 120, second and third water channels 120D and 120E are provided independently of the first water channel 120A, and these second and third water channels 120D and 120E are provided. Is capable of supplying cooling water through the inlet 120F.

In this case, the inlet 120F of the second water channel 120
The end portion different from the side is connected to the water reservoir 130A inside the first water cooling block 130 attached to the lower surface of the backing plate 120 via the through hole 120G, so that the cooling water supplied from the inlet 120F is supplied. Water can be supplied to the water reservoir 130A of the first water-cooled block 130, and the first water-cooled block 1 can be supplied.
The cooling water supplied to the water reservoir 130 </ b> A of 30 includes the through hole 120 </ b> H provided in the backing plate 120 and the water channel 1.
The first cooling block 130 can be cooled by sequentially discharging water into the first water passage 120A through 20J.

In the same manner as above, the second cooling block 13
In order to cool No. 1, the backing plate 120 is provided with through holes 120K and 120L and a water channel 120M, respectively.

Further, the backing plate 120 is similarly provided with a fourth water channel 120N and through holes 120P, 120.
Q, a water passage 120R, and an inlet 120S for supplying cooling water to the fourth water passage 120N are provided. Therefore, by constructing the backing plate in this way, the present invention can be applied to a sputtering device capable of simultaneously performing film formation processing on, for example, three substrates.

[0062]

As described above, according to the present invention, in the magnetron type sputtering device, a magnetic field is generated in the space region sandwiched between the target and the film forming object.
Since at least the first magnet of the magnetic field generating means in which the ring-shaped second magnet is arranged inside the ring-shaped first magnet is formed into an elliptical shape, the target and the film-forming target are formed. A magnetic field having a plurality of magnetic force peaks can be formed in the space region object sandwiched by. Therefore, by avoiding local concentration of plasma generated in the space region, it is possible to realize a sputter device capable of practically sufficiently preventing the occurrence of defects in arcing and film forming objects.

[Brief description of drawings]

FIG. 1 is a sectional view showing an overall configuration of a sputter device according to an embodiment.

FIG. 2 is a cross-sectional view showing a configuration of a backing plate and a cooling block.

FIG. 3 is a plan view showing a state when the backing plate is seen through from the upper surface side.

4A and 4B are a top view and a cross-sectional view showing a configuration of a magnetic field device of an example, and a characteristic curve diagram showing a magnetic force distribution of the magnetic field device.

FIG. 5 is a schematic diagram showing another configuration example of the magnetic field device.

FIG. 6 is a schematic diagram showing another configuration example of the backing plate.

FIG. 7 is a cross-sectional view showing a configuration of a conventional sputter device.

FIG. 8 is a top view and a cross-sectional view showing the configuration of a conventional backing plate.

9A and 9B are a top view and a cross-sectional view showing a configuration of a conventional magnetic field device, and a characteristic curve diagram showing a magnetic force distribution of the magnetic field device.

[Explanation of symbols]

30 ... Spatter device, 39 ... Container, 40 ... Backing plate, 40A, 40D, 40E ... Water channel, 41
...... Target, 42 …… Center mask, 43 …… Outer peripheral mask, 44 …… Magnetic field device, 60 …… Cooling block,
70 ... Substrate, 71 ... Sputtering area, 90 ...
Outer magnet, 91 ... Inner magnet, 92 ... Yoke.

Claims (2)

[Claims] 1. A container into which a predetermined gas is introduced, a target fixed in the container, supporting means for supporting a film-forming target so as to face the target, and a negative voltage is applied to the target. By doing so, negative voltage applying means for accelerating the ionized constituent components of the gas between the target and the film-forming target to collide with the target, and a ring-shaped inside of the ring-shaped first magnet. A magnetic field generating means for arranging a second magnet, for generating a ring-shaped magnetic field in a space region sandwiched by the target and the film forming object, and confining the constituent components of the ionized gas in the magnetic field. And driving means for rotationally moving the magnetic field in parallel by rotating the magnetic field generating means in a plane perpendicular to the magnetic field. Raw means, among the first and second magnets,
At least the first magnet is formed into an elliptical shape. 2. The sputter device according to claim 1, wherein the driving means rotates the magnetic field generating means with eccentricity in a plane perpendicular to the magnetic field.