JPH08234427A - Photosensitive resin composition for thick film electrically conductive circuit and production of thick film electrically conductive circuit using the same - Google Patents
Photosensitive resin composition for thick film electrically conductive circuit and production of thick film electrically conductive circuit using the sameInfo
- Publication number
- JPH08234427A JPH08234427A JP20096995A JP20096995A JPH08234427A JP H08234427 A JPH08234427 A JP H08234427A JP 20096995 A JP20096995 A JP 20096995A JP 20096995 A JP20096995 A JP 20096995A JP H08234427 A JPH08234427 A JP H08234427A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- photosensitive resin
- resin composition
- light
- conductive circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、昨今ますます小型
化、多機能化していく電子部品もしくは回路部品分野
で、超小型、かつ、高性能な小型モーター用コイル、あ
るいはコンパクトディスクに見られるデータの読みとり
部品である光ピックアップといった部品の製造、LSI
の細密な引き回し部分を含む回路基板、更には、ますま
す高精細化していく表示素子等の接続用回路部品の製造
に適した、厚膜導電性回路用感光性樹脂組成物およびそ
れを用いた厚膜導電性回路の製造方法に関するものであ
る。特に最小配線ピッチが100μm未満の部分を含ん
だ高密度、かつ低抵抗な異ピッチ接続配線部品に関する
ものである。BACKGROUND OF THE INVENTION The present invention relates to the field of electronic components or circuit components that are becoming smaller and more multifunctional in recent years, and the data found in ultra-compact and high-performance small motor coils or compact discs. Manufacture of parts such as optical pickups, which are read parts of
A circuit board including a fine wiring part of the above, and further, a photosensitive resin composition for a thick film conductive circuit, which is suitable for the production of a circuit element for connection such as a display element, which is becoming more and more high definition, and the same. The present invention relates to a method for manufacturing a thick film conductive circuit. In particular, the present invention relates to a high-density and low-resistance different-pitch connection wiring component including a portion where the minimum wiring pitch is less than 100 μm.
【0002】[0002]
【従来の技術】ますます高性能化していくLSI(大規
模集積回路)等は、高性能化の要求とともにますますピ
ン数が増加し、また、そのピンのピッチもますます狭く
なっている。また、液晶ディスプレイにみられるよう
に、ますます高精細化の要求が高まる中、表示走査線の
本数が増加し、同時に配線間隔も極めて狭くなり、表示
を制御するICの実装が困難となってきている。2. Description of the Related Art In LSIs (Large Scale Integrated Circuits) and the like, which have ever-increasing performance, the number of pins is increasing with the demand for higher performance, and the pitch of the pins is becoming narrower. Also, as seen in liquid crystal displays, as the demand for higher definition increases, the number of display scanning lines increases, and at the same time the wiring spacing becomes extremely narrow, making it difficult to mount an IC that controls display. ing.
【0003】この様な技術趨勢の中、回路配線間隔の大
きく異なる部品同士、例えば、狭いピッチのピンを有す
るIC、LSI等とマザーボード(製法上回路配線間隔
が大きい)を接続する高密度かつ低抵抗な異ピッチ接続
配線部品の要求が高まっている。尚、この様な部品に対
し『インターポーザ』と定義する文献もあるが、(日経
エレクトロニクス1995.1.16(No.626)
79〜86頁)本発明ではこれを異ピッチ接続配線部品
という。In such a technological trend, high density and low density for connecting parts having greatly different circuit wiring intervals, for example, an IC or LSI having pins with a narrow pitch and a mother board (the circuit wiring interval is large due to the manufacturing method). There is an increasing demand for resistive different-pitch connection wiring components. There are documents that define such parts as "interposers", but (Nikkei Electronics 1995.1.16 (No. 626)
In the present invention, this is referred to as a different pitch connection wiring component.
【0004】異ピッチ接続配線部品の要求性能などは、
例えば第六回マイクロエレクトロニクスシンポジウム頁
43〜46に記載されているように、CPUを高速動作
クロック数で作動させるとき、配線抵抗の増加に伴い信
号パルスの減衰が見られるとの報告がある。更に、高精
細液晶表示素子の制御用ICと液晶基板との接続の配線
抵抗が大きくなると、S/N比の低下が見られ画像が不
安定になると言われている。その結果、異ピッチ接続配
線部品には、低抵抗回路配線で配線ピッチが小さいこと
が要求される。従って、回路配線は、その断面積が大き
い、すなわち、導体高さが高いことが要求される。The required performance of the different pitch connection wiring parts is as follows.
For example, as described on pages 43 to 46 of the 6th Microelectronics Symposium, there is a report that when a CPU is operated at a high-speed operation clock frequency, signal pulses are attenuated as wiring resistance increases. Further, it is said that if the wiring resistance of the connection between the control IC of the high-definition liquid crystal display element and the liquid crystal substrate increases, the S / N ratio decreases and the image becomes unstable. As a result, different-pitch connection wiring components are required to have a low resistance circuit wiring and a small wiring pitch. Therefore, the circuit wiring is required to have a large cross-sectional area, that is, a high conductor height.
【0005】またプリント基板等に見られる様に、従
来、導電性回路を形成する方法には、次の三法が挙げら
れる。すなわち、導電性基板上に形成された感光性樹脂
組成物の硬化樹脂像(以下、本発明では樹脂画像と呼称
する)を保護膜としてエッチング等により所望の回路を
形成していくサブトラクティブ法(エッチング法とも呼
称されている)、また絶縁基板上に樹脂画像を形成し、
無電解銅メッキなどを行い導体回路を形成していくアデ
ィティブ法、および両者の中間的な方法であるセミアデ
ィティブ法が挙げられる。Further, as has been found in printed circuit boards and the like, conventionally, the following three methods have been mentioned as methods for forming a conductive circuit. That is, a subtractive method for forming a desired circuit by etching or the like using a cured resin image (hereinafter referred to as a resin image in the present invention) of a photosensitive resin composition formed on a conductive substrate as a protective film ( It is also called the etching method), and a resin image is formed on the insulating substrate,
The additive method of forming a conductor circuit by performing electroless copper plating or the like, and the semi-additive method, which is an intermediate method between the two, are mentioned.
【0006】前述した方法のうち現在ではサブトラクテ
ィブ法が主流をなしているものの、部品自体の小型化、
回路の高密度化の要求が高まっている技術趨勢の中で、
配線ピッチが50μm以下の回路を形成するには技術的
な限界に来ている。たとえ技術的に形成できたとして
も、回路としての信頼性の低下、あるいは、電気的特
性、特に抵抗値が大きくなり、回路もしくは部品として
の機能を満足に発揮出来得ていないのが実状である。さ
らに、製造することが出来ても工程が極めて複雑であっ
たりして、産業上の利用価値を低下させている。Among the above-mentioned methods, the subtractive method is currently the mainstream, but the miniaturization of the components themselves,
In the technological trend where the demand for higher circuit density is increasing,
There is a technical limit in forming a circuit having a wiring pitch of 50 μm or less. Even if it can be technically formed, the reliability of the circuit is deteriorated, or the electrical characteristics, especially the resistance value becomes large, and the function as a circuit or a component cannot be satisfactorily exhibited. . Furthermore, even if it can be manufactured, the process is extremely complicated, which lowers the industrial utility value.
【0007】他の高密度かつ低抵抗回路配線の作成法と
して、例えば、特開昭52−137666号公報、特開
昭57−162489号公報にはレジストパターンに厚
膜ペースト材料を充填する方法、特開昭55−4172
9号公報には厚膜ペーストとポジ型レジストを混合し、
露光・現像する方法が開示されている。特開昭59−1
98792号公報には導電性基板をベースとして、レジ
スト積層・露光を繰り返した後、現像、電気メッキによ
る厚膜パターン導体の製造方法が開示されている。As another method for forming high-density and low-resistance circuit wiring, for example, JP-A-52-137666 and JP-A-57-162489 disclose a method of filling a resist pattern with a thick film paste material. JP-A-55-4172
No. 9 publication mixes a thick film paste and a positive resist,
A method of exposing and developing is disclosed. JP 59-1
Japanese Patent Publication No. 98792 discloses a method for producing a thick film pattern conductor by repeating resist lamination and exposure, followed by development and electroplating, using a conductive substrate as a base.
【0008】また特開昭56−94690号公報、特開
昭60−161605号公報には導電性基板とフォトリ
ソグラフィーを組み合わせ、異方性電解メッキによるフ
ァインパターン回路の成形方法が示されている。Further, JP-A-56-94690 and JP-A-60-161605 disclose a method of forming a fine pattern circuit by anisotropic electroplating by combining a conductive substrate and photolithography.
【0009】[0009]
【発明が解決しようとする課題】しかしながら、銅張り
基板、フォトリソグラフィーおよびエッチングを組み合
わせる方法で得られる回路配線導体は、銅箔のエッチン
グ時におけるサイドエッチ現象を抑制することが極めて
困難な為、配線の高密度化、低抵抗化を妨げている。さ
らに、導体高さが大きくなるにつれて、この現象が顕著
になるため、通常使用されている銅張り基板の銅箔の厚
みは18〜35μm程度ではあるが、配線密度が10本
/mm程度、つまり配線ピッチが100μm程度以下に
なると十分に低抵抗にはできず、また技術的にも配線ピ
ッチ50μm程度が限界である。However, since the circuit wiring conductor obtained by the method of combining the copper-clad substrate, photolithography and etching is extremely difficult to suppress the side etching phenomenon during the etching of the copper foil, It prevents the high density and low resistance. Further, since this phenomenon becomes more remarkable as the conductor height increases, the thickness of the copper foil of the copper-clad substrate that is normally used is about 18 to 35 μm, but the wiring density is about 10 wires / mm, that is, If the wiring pitch is about 100 μm or less, the resistance cannot be made sufficiently low, and technically the wiring pitch is about 50 μm.
【0010】また高密度かつ低抵抗回路配線の作成法で
得られる厚膜パターン導体は、ペーストの焼成時に導電
体内に気孔が生じ、その結果、導体抵抗の増大による回
路特性の悪化が起こる。特開昭59−198792号公
報では比較的アスペクト比の高いレジストパターンが得
られることが予想されるが、工程が複雑であり、積層・
露光時の位置ズレによる欠陥の導入、レジスト形状不良
が起こり、それにともなう回路の短絡等、問題が多い。
さらに特開昭56−94690号公報、特開昭60−1
61605号公報の方法では、導体設計をメッキスター
ト幅でコントロールしており、かつ、導体形状が球形で
あるため、導体の幅に対して厚みを高くすることができ
ず、高密度・低抵抗回路配線が得られない。Further, in the thick film pattern conductor obtained by the method of forming the high density and low resistance circuit wiring, pores are formed in the conductor during firing of the paste, and as a result, the conductor resistance is increased to deteriorate the circuit characteristics. In Japanese Patent Laid-Open No. 59-198792, it is expected that a resist pattern having a relatively high aspect ratio can be obtained, but the process is complicated, and the stacking
There are many problems such as the introduction of defects due to the positional deviation during exposure, the defective resist shape, and the accompanying short circuit of the circuit.
Further, JP-A-56-94690 and JP-A-60-1
In the method of Japanese Patent No. 61605, since the conductor design is controlled by the plating start width and the conductor shape is spherical, the thickness cannot be increased with respect to the width of the conductor, and the high density / low resistance circuit is provided. Wiring cannot be obtained.
【0011】これらいずれの方法においても、導体配線
密度20本/mm以上、つまり配線ピッチ50μm以下
で、導体アスペクト比1.0以上である回路配線導体は
実用的に得られていない。そこで、本発明は高いアスペ
クト比の導体と小さい導体間距離の回路を形成すること
により、高密度でかつ低抵抗な異ピッチ接続配線部品を
得ること、さらに比較的簡便で安価に、かつ工業的生産
性が高く、安定した製品の製造方法を提供することを目
的とするものである。In any of these methods, a circuit wiring conductor having a conductor wiring density of 20 wires / mm or more, that is, a wiring pitch of 50 μm or less and a conductor aspect ratio of 1.0 or more has not been practically obtained. Therefore, the present invention obtains a high-density and low-resistance different-pitch connection wiring component by forming a conductor having a high aspect ratio and a circuit having a small distance between conductors, and is relatively simple, inexpensive, and industrial. It is an object of the present invention to provide a highly productive and stable method for producing a product.
【0012】[0012]
【課題を解決するための手段】本発明者らは、こうした
技術動向を踏まえ、鋭意検討を重ねた結果、膜厚20〜
400μm、光の波長300〜420μmで用いられる
感光性樹脂組成物において、エチレン性不飽和基を有
し、分子量が500〜50000のオリゴマーもしくは
プレポリマーと、1分子中に少なくとも1つのアクリロ
イル基もしくはメタクリロイル基をもつ重合性単量体を
少なくとも1種と、前記波長での光吸収極大におけるモ
ル吸光係数が5〜1000リットル/mol・cmの光
重合開始剤を0.1〜10重量%と、光吸収剤を0.0
1〜1重量%とを含み、光透過率が15〜75%である
ことを特徴とする厚膜導電性回路用感光性樹脂組成物を
見い出した。また、該厚膜導体回路用感光性樹脂組成物
を導電性基板上に塗布し、露光、現像して厚膜樹脂画像
を形成した後、導電性基板上に厚膜メッキを施し、導電
性基板を除去することを特徴とする厚膜導電性回路の製
造方法を見い出すに至った。さらに導電性基板が銅、ま
たはアルミニウムであることが好ましい。[Means for Solving the Problems] The inventors of the present invention have made earnest studies based on these technological trends, and as a result, the film thickness of 20 to
In a photosensitive resin composition used at 400 μm and a light wavelength of 300 to 420 μm, an oligomer or prepolymer having an ethylenically unsaturated group and a molecular weight of 500 to 50,000, and at least one acryloyl group or methacryloyl in one molecule. At least one polymerizable monomer having a group, and 0.1 to 10% by weight of a photopolymerization initiator having a molar absorption coefficient of 5 to 1000 liter / mol · cm at the light absorption maximum at the above wavelength, 0.0% absorbent
1 to 1% by weight, and a light transmittance of 15 to 75% was found. Further, the photosensitive resin composition for a thick film conductor circuit is applied on a conductive substrate, exposed and developed to form a thick film resin image, and then a thick film plating is applied on the conductive substrate to form a conductive substrate. The inventors have found a method for manufacturing a thick film conductive circuit, which is characterized in that Further, the conductive substrate is preferably copper or aluminum.
【0013】本発明において、エチレン性不飽和結合を
有するオリゴマーまたはプレポリマーが、アルキルジオ
ールまたは、分子内に5個以下のエーテル結合を有する
ジオールのいずれかのアルコール成分、あるいはこれら
の混合物からなるアルコール成分と、エチレン性不飽和
結合を有するジカルボン酸単独もしくはエチレン性不飽
和結合を有しないジカルボン酸とエチレン性不飽和結合
を有するジカルボン酸との混合物とからなる酸成分との
縮重合により得られる不飽和ポリエステルである場合に
特に好ましい画像が得られる。また、分子量が500未
満の場合、感光性樹脂組成物としての感度が低下しすぎ
使用に耐えないし、さらに、50000を越えると高エ
ネルギー線を照射した後の現像性が著しく低下し、高解
像力は得られない。さらに、導電性回路用組成物とし
て、感度、解像度の点から、1200〜25000の分
子量が好ましい範囲である。In the present invention, the oligomer or prepolymer having an ethylenically unsaturated bond is an alcohol component of either an alkyl diol or a diol having 5 or less ether bonds in the molecule, or an alcohol composed of a mixture thereof. A component obtained by condensation polymerization of a dicarboxylic acid having an ethylenically unsaturated bond alone or an acid component comprising a mixture of a dicarboxylic acid having no ethylenically unsaturated bond and a dicarboxylic acid having an ethylenically unsaturated bond. Particularly preferable images are obtained when the polyester is saturated. If the molecular weight is less than 500, the sensitivity of the photosensitive resin composition is too low to withstand use, and if it exceeds 50,000, the developability after irradiation with high energy rays is remarkably decreased and the high resolution is high. I can't get it. Further, the molecular weight of 1200 to 25,000 is a preferable range for the composition for conductive circuits from the viewpoint of sensitivity and resolution.
【0014】本発明の感光性樹脂組成物として用いうる
オリゴマーまたはプレポリマーとして、不飽和ポリエス
テル、不飽和ポリウレタン、オリゴエステルアクリレー
ト類もしくはオリゴエステルメタクリレート類、不飽和
ポリアミド類、不飽和ポリイミド類、不飽和ポリエーテ
ル類、不飽和ポリアクリレート類もしくは不飽和ポリメ
タクリレート類及びこれらの各種変性体、混合物、炭素
−炭素二重結合を有する化合物を例示することが出来
る。これらの内、画像の高さと幅の比(以下、アスペク
ト比と呼称する)の大きい画像を得る場合の好ましい例
として、不飽和ポリエステル類、もしくは、不飽和ポリ
ウレタン類が挙げられる。As the oligomer or prepolymer which can be used as the photosensitive resin composition of the present invention, unsaturated polyester, unsaturated polyurethane, oligoester acrylates or oligoester methacrylates, unsaturated polyamides, unsaturated polyimides, unsaturated Examples thereof include polyethers, unsaturated polyacrylates or unsaturated polymethacrylates, various modified products, mixtures thereof, and compounds having a carbon-carbon double bond. Among these, unsaturated polyesters or unsaturated polyurethanes are preferable examples for obtaining an image having a large image height to width ratio (hereinafter referred to as an aspect ratio).
【0015】不飽和ポリエステル類として、例えばマレ
イン酸、フマル酸、イタコン酸のような不飽和二塩基酸
類またはその酸無水物とエチレングリコール、プロピレ
ングリコール、ジエチレングリコール、トリエチレング
リコール、グリセリン、トリメチロールプロパン、ペン
タエリトリトール、末端水酸基を有する1、4−ポリブ
タジエン、水添もしくは非水添1、2−ポリブタジエ
ン、ブタジエン−スチレン共重合体、ブタジエン−アク
リロニトリル共重合体等の多価アルコールとを反応させ
たポリエステル類、又、前記酸成分の一部を飽和多塩基
酸に置き換えたポリエステル類、あるいは、乾性油脂酸
または半乾性油脂酸で変性したポリエステル類などが挙
げられる。Examples of the unsaturated polyesters include unsaturated dibasic acids such as maleic acid, fumaric acid and itaconic acid or acid anhydrides thereof and ethylene glycol, propylene glycol, diethylene glycol, triethylene glycol, glycerin, trimethylolpropane, Polyesters reacted with polyhydric alcohols such as pentaerythritol, 1,4-polybutadiene having a terminal hydroxyl group, hydrogenated or non-hydrogenated 1,2-polybutadiene, butadiene-styrene copolymer, and butadiene-acrylonitrile copolymer In addition, polyesters in which a part of the acid component is replaced with a saturated polybasic acid, or polyesters modified with a dry oil-and-fat acid or a semi-dry oil-and-fat acid, etc.
【0016】不飽和ポリウレタン類としては、例えば前
記した多価アルコール類やポリエステルポリオール類、
ポリエーテルポリオール類等のポリオール類、末端水酸
基を有する1、4−ポリブタジエン、水添もしくは非水
添1、2−ポリブタジエン、ブタジエン−スチレン共重
合体、ブタジエン−アクリロニトリル共重合体等と、ト
ルレンジイソシアネート、ジフェニルメタン、4、4’
−ジイソシアネート、ヘキサメチレンジイソシアネート
などのポリイソシアネート類から誘導されたポリウレタ
ン類の末端イソシアネート基、あるいは水酸基の反応性
を利用して不飽和基を導入した化合物が挙げられる。す
なわち、水酸基、カルボキシル基、アミノ基等の活性水
素を有する化合物とイソシアネート類との反応により不
飽和基を導入したり、カルボキシル基と水酸基との反応
により不飽和基を導入したり、または、前記の不飽和ポ
リエステル類をポリイソシアネート類で連結した化合物
などである。Examples of unsaturated polyurethanes include the above-mentioned polyhydric alcohols and polyester polyols,
Polyols such as polyether polyols, 1,4-polybutadiene having terminal hydroxyl groups, hydrogenated or non-hydrogenated 1,2-polybutadiene, butadiene-styrene copolymers, butadiene-acrylonitrile copolymers, etc., and tolylene diisocyanate. , Diphenylmethane, 4, 4 '
-Compounds in which an unsaturated group is introduced by utilizing the reactivity of the terminal isocyanate group or the hydroxyl group of polyurethanes derived from polyisocyanates such as diisocyanate and hexamethylene diisocyanate. That is, a hydroxyl group, a carboxyl group, an unsaturated group is introduced by a reaction between a compound having active hydrogen such as an amino group and an isocyanate, or an unsaturated group is introduced by a reaction between a carboxyl group and a hydroxyl group, or And unsaturated polyesters linked with polyisocyanates.
【0017】特に好ましい例として、アルキルジオール
類と分子内に5個以下のエーテル結合を有するジオール
類との混合物からなるアルコール成分と、エチレン性不
飽和結合を有するジカルボン酸類単独もしくはエチレン
性不飽和結合を有しないジカルボン酸とエチレン性不飽
和結合を有するジカルボン酸類との混合物からなる酸成
分との縮重合により得られる、分子量500〜5000
0の不飽和ポリエステル類である。As a particularly preferred example, an alcohol component comprising a mixture of alkyl diols and diols having 5 or less ether bonds in the molecule, dicarboxylic acids having an ethylenically unsaturated bond alone or ethylenically unsaturated bond Molecular weight of 500 to 5000 obtained by polycondensation of an acid component consisting of a mixture of a dicarboxylic acid having no carboxylic acid and a dicarboxylic acid having an ethylenically unsaturated bond.
0 unsaturated polyesters.
【0018】1分子中に少なくとも1つのアクリロイル
基もしくはメタクリロイル基をもつ重合性単量体として
は公知の種々の化合物を用いることが出来るが、好まし
い例を挙げればポリエチレングリコールのモノまたはジ
アクリレートおよびメタクリレート、プロピレングリコ
ールのモノまたはジアクリレートおよびメタクリレー
ト、シクロヘキサンジアクリレートおよびメタクリレー
ト、ビスフェノールAのモノまたはジアクリレートおよ
びメタクリレート、イソボルニルアクリレートおよびメ
タクリレート、アクリルアミドおよびその誘導体、メタ
クリルアミドおよびその誘導体、トリメチロールプロパ
ントリアクリレートおよびメタクリレート、グリセロー
ルのジまたはトリアクリレートおよびメタクリレート、
ペンタエリスリトールのジ、トリ、またはテトラアクリ
レートおよびメタクリレート、およびこれら化合物のエ
チレンオキサイドまたはプロピレンオキサイド付加物な
どの化合物を挙げることが出来る。As the polymerizable monomer having at least one acryloyl group or methacryloyl group in one molecule, various known compounds can be used. Preferred examples include polyethylene glycol mono- or diacrylates and methacrylates. Propylene glycol mono- or diacrylates and methacrylates, cyclohexanediacrylates and methacrylates, bisphenol A mono- or diacrylates and methacrylates, isobornyl acrylates and methacrylates, acrylamides and their derivatives, methacrylamides and their derivatives, trimethylolpropane triacrylate And methacrylate, di- or triacrylates and methacrylates of glycerol,
Mention may be made of compounds such as pentaerythritol di-, tri- or tetra-acrylates and methacrylates, and ethylene oxide or propylene oxide adducts of these compounds.
【0019】なお、単量体は液体クロマトグラフまたは
ガスクロマトグラフで検出することができる。本発明で
用いる光重合開始剤は波長が300〜420nmの範囲
での光吸収極大におけるモル吸光係数が5〜1000リ
ットル/mol・cmが好ましい。すなわち、モル吸光
係数が1000リットル/mol・cmをこえる光重合
開始剤を用いた場合、20〜400μmの厚膜の光重合
組成物の内部まで光が到達せず、十分に硬化させること
が出来ない。また、露光時間を増加させると硬化しては
ならない部分まで硬化してしまい、メッキで導体を形成
することができない。The monomer can be detected by liquid chromatography or gas chromatography. The photopolymerization initiator used in the present invention preferably has a molar extinction coefficient of 5 to 1000 liter / mol · cm at the light absorption maximum in the wavelength range of 300 to 420 nm. That is, when a photopolymerization initiator having a molar extinction coefficient of more than 1000 liter / mol · cm is used, light does not reach the inside of the photopolymerization composition having a thick film of 20 to 400 μm, and the photopolymerization composition can be sufficiently cured. Absent. Further, if the exposure time is increased, even the portion that should not be cured will be cured, and the conductor cannot be formed by plating.
【0020】一方、モル吸光係数が5リットル/mol
・cm未満の光重合開始剤では感光性樹脂組成物の感度
が低すぎて実用にたえない。なお、モル吸光係数、光透
過率の測定は、通常の分光光度計により測定することが
できる。このような光重合開始剤の例としてはベンゾイ
ン、ベンゾインメチルエーテル、ベンゾインエチルエー
テル、ベンゾインイソプロピルエーテル、ベンゾインプ
ロピルエーテル、ベンゾインイソブチルエーテル、ベン
ゾインブチルエーテル、2,2−ジヒドロキシ−2−フ
ェニルアセトフェノン、2,2−ジメトキシ−2−フェ
ニルアセトフェノン、2,2−ジエトキシ−2−フェニ
ルアセトフェノン、などを挙げることが出来る。On the other hand, the molar extinction coefficient is 5 liter / mol.
The sensitivity of the photosensitive resin composition is too low to be practically used with a photopolymerization initiator of less than cm. The molar extinction coefficient and the light transmittance can be measured by an ordinary spectrophotometer. Examples of such a photopolymerization initiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin propyl ether, benzoin isobutyl ether, benzoin butyl ether, 2,2-dihydroxy-2-phenylacetophenone, 2,2. -Dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2-phenylacetophenone and the like can be mentioned.
【0021】本発明における光吸収剤は波長が300〜
420nmの間に吸収を持ち、感光性樹脂組成物に均一
に溶解もしくは分散することの出来るものであれば色
素、紫外線吸収剤等、何でもよい。この光吸収剤は露光
系の散乱や反射による光の回り込みを効率よく吸収し、
本来硬化してはならない部分の感光性樹脂組成物が現像
用液体によって除去できないほどに硬化するのを防ぐ効
果がある。The light absorber in the present invention has a wavelength of 300 to
Any substance such as a dye or an ultraviolet absorber may be used as long as it has absorption in the range of 420 nm and can be uniformly dissolved or dispersed in the photosensitive resin composition. This light absorber efficiently absorbs the wraparound of light due to scattering and reflection of the exposure system,
It has an effect of preventing the photosensitive resin composition, which should not be cured, from being cured to such an extent that it cannot be removed by the developing liquid.
【0022】本発明では光重合開始剤と光吸収剤の組み
合わせによって感光性樹脂組成物の光透過率を制御する
ことが重要で、膜厚20〜400μm、光の波長300
〜420nmで用いられる場合、前記波長での光吸収極
大におけるモル吸光係数が5〜1000リットル/mo
l・cmの光重合開始剤を0.1〜10重量%含み、光
透過率が15〜75%になるように光吸収剤を0.01
〜1重量%の範囲で含むときに未露光部の感光性樹脂組
成物の硬化を防ぐことができるため、例えば膜厚が10
0μmという厚膜でも解像ピッチ50μm以下といった
高解像度を発揮でき、なおかつ未露光部の現像性をも向
上できるので導電性基板上にメッキ等で導体を形成した
ときに断線したり、導体が細くなったりすることが極め
て少なく、信頼性の高い低抵抗の厚膜導体を形成でき
る。さらに好ましい範囲を挙げれば、感光性樹脂組成物
の光重合開始剤は0.5〜5重量%の範囲、光透過率は
20〜60%の範囲である。即ち、露光時間と取り扱い
易さの観点で感光性樹脂組成物の紫外線に対する感度が
実用上、より好ましい範囲となる。In the present invention, it is important to control the light transmittance of the photosensitive resin composition by the combination of the photopolymerization initiator and the light absorber. The film thickness is 20 to 400 μm, and the light wavelength is 300.
When used at ˜420 nm, the molar absorption coefficient at the light absorption maximum at the wavelength is 5 to 1000 liter / mo.
0.1 to 10% by weight of 1 · cm of a photopolymerization initiator, and 0.01% of a light absorber so that the light transmittance is 15 to 75%.
When it is contained in the range of 1 to 1% by weight, the unexposed portion of the photosensitive resin composition can be prevented from being cured.
Even with a thick film of 0 μm, a high resolution of 50 μm or less in resolution pitch can be exhibited, and the developability of the unexposed area can be improved. Therefore, when a conductor is formed on the conductive substrate by plating or the like, the wire is broken or the conductor is thin. It is possible to form a highly reliable, low-resistance thick film conductor with very little deterioration. As a more preferable range, the photopolymerization initiator of the photosensitive resin composition is in the range of 0.5 to 5% by weight, and the light transmittance is in the range of 20 to 60%. That is, the sensitivity of the photosensitive resin composition to ultraviolet rays is in a practically more preferable range from the viewpoint of exposure time and ease of handling.
【0023】次いで、感光性樹脂組成物を用いた厚膜導
体形成方法について述べる。すなわち、導電性基板上
に、本発明の厚膜導電性回路用感光性樹脂組成物を、2
0〜400μmの厚さに塗布し、高エネルギー線により
画像形成露光を施し、次いで、該感光性樹脂組成物の未
露光部分を現像用液体で溶解もしくは分散除去して導電
性基板上に所望の画像を形成した後、メッキ法により導
体を形成し、しかる後、導電性基板を除去することによ
って達成される。Next, a method for forming a thick film conductor using the photosensitive resin composition will be described. That is, the photosensitive resin composition for a thick film conductive circuit of the present invention is coated on a conductive substrate by 2
It is applied to a thickness of 0 to 400 μm, subjected to imagewise exposure with a high energy ray, and then the unexposed portion of the photosensitive resin composition is dissolved or dispersed with a developing liquid to remove it on a conductive substrate. This is achieved by forming an image, forming a conductor by a plating method, and then removing the conductive substrate.
【0024】高エネルギー線源は平行光光源であること
が好ましい。平行光光源を用いた場合、樹脂画像パター
ン断面が矩形を呈し、よりアスペクト比の高いパターン
が得られる。導電性基板を除去する方法としては、例え
ば酸、アルカリ、塩の水溶液等でエッチングする方法、
研磨で削り取る方法、機械的に剥離する方法、あるいは
これらを組み合わせる方法等が選択できる。The high energy radiation source is preferably a collimated light source. When a parallel light source is used, the cross section of the resin image pattern has a rectangular shape, and a pattern having a higher aspect ratio can be obtained. As a method of removing the conductive substrate, for example, a method of etching with an acid, alkali, or salt aqueous solution,
A method of scraping off by polishing, a method of mechanically peeling, a method of combining these, or the like can be selected.
【0025】感光性樹脂組成物の塗布厚みは20〜40
0μmの範囲で、電子部品、精密回路基板の必要導体厚
みによって決定される。また、導電性基板に特に制限は
ないが、アルミニウム、銅等の基板が好適に用いられ
る。必要に応じて、例えば導電性基板と感光性樹脂組成
物あるいはメッキ皮膜との密着力を向上させるために、
導電性基板に物理的、化学的な表面処理を施してもよ
い。The coating thickness of the photosensitive resin composition is 20-40.
Within the range of 0 μm, it is determined by the required conductor thickness of electronic components and precision circuit boards. The conductive substrate is not particularly limited, but a substrate made of aluminum, copper or the like is preferably used. In order to improve the adhesion between the conductive substrate and the photosensitive resin composition or the plating film, if necessary,
The conductive substrate may be subjected to physical or chemical surface treatment.
【0026】[0026]
【発明の実施の形態】以下に本発明を実施例により詳細
に説明する。なお、本発明は実施例により制限されるも
のではない。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail below with reference to Examples. The present invention is not limited to the examples.
【0027】[0027]
【実施例1】ジエチレングリコール、プロピレングリコ
ール、アジピン酸、フマル酸、イソフタル酸をモル比で
0.4/0.1/0.2/0.15/0.15の割合で
窒素雰囲気中、反応温度200℃、反応時間4時間、減
圧下で重縮合させて数平均分子量が1500の不飽和ポ
リエステルプレポリマーを作製した。Example 1 Diethylene glycol, propylene glycol, adipic acid, fumaric acid, isophthalic acid in a molar ratio of 0.4 / 0.1 / 0.2 / 0.15 / 0.15 in a nitrogen atmosphere at a reaction temperature. An unsaturated polyester prepolymer having a number average molecular weight of 1500 was produced by polycondensation under reduced pressure at 200 ° C. for a reaction time of 4 hours.
【0028】このプレポリマー100重量部にテトラエ
チレングリコールジメタクリレート12部、ジエチレン
グリコールジメタクリレート5部、2−ヒドロキシエチ
ルメタクリレート8部、ペンタエリスリトールトリメタ
クリレート15部、リン酸モノ(メタクリロイルオキシ
エチル)5部、光重合開始剤として2,2−ジメトキシ
−2−フェニルアセトフェノン2部、4−ターシャリー
ブチルカテコール0.05部、光吸収剤として日本化薬
(株)製カヤセットレッドA−2G0.15部を加えて
よく撹拌混合し、感光性樹脂組成物を得た。To 100 parts by weight of this prepolymer, 12 parts of tetraethylene glycol dimethacrylate, 5 parts of diethylene glycol dimethacrylate, 8 parts of 2-hydroxyethyl methacrylate, 15 parts of pentaerythritol trimethacrylate, 5 parts of mono (methacryloyloxyethyl) phosphate, 2,2-dimethoxy-2-phenylacetophenone 2 parts as a photopolymerization initiator, 4-tert-butyl catechol 0.05 part, and Nippon Kayaku Co., Ltd. Kayaset Red A-2G 0.15 parts as a light absorber. The mixture was well stirred and mixed to obtain a photosensitive resin composition.
【0029】2,2−ジメトキシ−2−フェニルアセト
フェノンのエタノール中におけるモル吸光係数は181
リットル/mol・cm(336nm)であった。ま
た、この感光性樹脂組成物の100μm膜厚における、
光透過率は24%であった。次にこの感光性樹脂組成物
をアルミ板上に100μmの厚さに塗布し、25本/m
m(配線ピッチ40μm)の密度の配線パターンに対応
したフォトマスクを通して水銀ショートアークランプの
紫外線を照射し、未露光部を1%のほう酸ナトリウム水
溶液で除去し、樹脂画像を形成した。次いで樹脂画像を
形成したアルミ板に電解銅メッキを施し、アルミ板を1
0%塩酸でエッチング除去して配線密度25本/mm、
導体厚が100μmの厚膜導体配線板を得た。The molar extinction coefficient of 2,2-dimethoxy-2-phenylacetophenone in ethanol is 181.
It was liter / mol · cm (336 nm). Further, when the photosensitive resin composition has a film thickness of 100 μm,
The light transmittance was 24%. Next, this photosensitive resin composition was applied on an aluminum plate to a thickness of 100 μm,
Ultraviolet rays of a mercury short arc lamp were irradiated through a photomask corresponding to a wiring pattern having a density of m (wiring pitch 40 μm), and the unexposed portion was removed with a 1% sodium borate aqueous solution to form a resin image. Next, electrolytic copper plating is applied to the aluminum plate on which the resin image is formed, and the aluminum plate is
The wiring density is 25 wires / mm by etching away with 0% hydrochloric acid,
A thick film conductor wiring board having a conductor thickness of 100 μm was obtained.
【0030】[0030]
【比較例】実施例1における2,2−ジメトキシ−2−
フェニルアセトフェノン2部の代わりに2−メチルアン
トラキノン1部を用いた他は実施例1と同様にして感光
性樹脂組成物を作製した。2−メチルアントラキノンの
モル吸光係数は3800リットル/mol・cm(32
6nm)であり、この感光性樹脂組成物の100μm膜
厚における、光透過率は1.8%であった。Comparative Example 2,2-dimethoxy-2-in Example 1
A photosensitive resin composition was prepared in the same manner as in Example 1 except that 1 part of 2-methylanthraquinone was used instead of 2 parts of phenylacetophenone. The molar extinction coefficient of 2-methylanthraquinone is 3800 liter / mol · cm (32
6 nm), and the light transmittance of this photosensitive resin composition at a film thickness of 100 μm was 1.8%.
【0031】次にこの感光性樹脂組成物をアルミ板上に
100μmの厚さに塗布し、25本/mmの密度の配線
パターンに対応したフォトマスクを通して水銀ショート
アークランプの紫外線を照射し、未露光部を1%のほう
酸ナトリウム水溶液で除去したところ、光がアルミ板に
到達せず、樹脂画像がアルミ板に残らなかった。光がア
ルミ板に到達するように紫外線の照射時間を5倍にした
ところ、未露光部の樹脂も硬化してしまい、メッキで導
体を形成することはできなかった。Next, this photosensitive resin composition was applied on an aluminum plate to a thickness of 100 μm, and was irradiated with ultraviolet rays from a mercury short arc lamp through a photomask corresponding to a wiring pattern having a density of 25 lines / mm. When the exposed portion was removed with a 1% sodium borate aqueous solution, light did not reach the aluminum plate, and the resin image did not remain on the aluminum plate. When the irradiation time of the ultraviolet rays was made five times so that the light reached the aluminum plate, the resin in the unexposed area was also cured, and the conductor could not be formed by plating.
【0032】[0032]
【実施例2】東洋アルミニウム(株)製、厚み100μ
mのアルミニウム基板を上村工業(株)製AZ401処
理液を用いて30℃、80秒間の表面処理を行った。次
に、ジエチレングリコール、プロピレングリコールとア
ジピン酸、イタコン酸、フマル酸をそれぞれモル比で
0.45/0.05/0.20/0.15/0.15の
割合で重縮合させて得た数平均分子量が1700の不飽
和ポリエステル樹脂100部に、ペンタエリスリトール
トリメタクリレート15部、ジエチレングリコールジメ
タクリレート3部、テトラエチレングリコールジメタク
リレート7.5部、2−ヒドロキシエチルメタクリレー
ト3部、ジアセトンアクリルアミド1.5部、リン酸モ
ノ(メタクリロイルオキシエチル)3.6部、ベンゾイ
ンイソブチルエーテル1部、4−ターシャリーブチルカ
テコール0.04部、光吸収剤としてオリヱント化学
(株)製OPLASイエロー130、0.014部を加
え、充分、撹拌・混合し、感光性樹脂組成物Aを得た。[Example 2] Toyo Aluminum Co., Ltd., thickness 100μ
The aluminum substrate of m was subjected to a surface treatment at 30 ° C. for 80 seconds using a AZ401 treatment liquid manufactured by Uemura Industry Co., Ltd. Next, a number obtained by polycondensing diethylene glycol, propylene glycol and adipic acid, itaconic acid, and fumaric acid at a molar ratio of 0.45 / 0.05 / 0.20 / 0.15 / 0.15, respectively. 100 parts of unsaturated polyester resin having an average molecular weight of 1700, 15 parts of pentaerythritol trimethacrylate, 3 parts of diethylene glycol dimethacrylate, 7.5 parts of tetraethylene glycol dimethacrylate, 3 parts of 2-hydroxyethyl methacrylate, 1.5 parts of diacetone acrylamide. Parts, 3.6 parts of mono (methacryloyloxyethyl) phosphate, 1 part of benzoin isobutyl ether, 0.04 part of 4-tert-butyl catechol, OPLAS Yellow 130, 0.014 part as a light absorbing agent manufactured by Orient Chemical Co., Ltd. And mix well. To obtain a photosensitive resin composition A.
【0033】また組成物Aのベンゾインイソブチルエー
テル1部の代わりに2,2−ジメトキシ−2−フェニル
アセトフェノン2部を用い、オリエント化学(株)製O
PLASイエロー130の代わりにオリエント化学
(株)製オイルイエロー3G、0.05部を用いた他は
組成物Aと同様にして調製し感光性樹脂組成物Bを得
た。組成物Aの365nmにおける透過率を日立製作所
製U−3210型分光光度計で測定したところ、膜厚4
00μmで25%、膜厚100μmで71%であった。
同様に組成物Bの光透過率は膜厚50μmで26%、膜
厚20μmで59%であった。Further, 2 parts of 2,2-dimethoxy-2-phenylacetophenone was used in place of 1 part of benzoin isobutyl ether of the composition A, and O produced by Orient Chemical Co., Ltd. was used.
A photosensitive resin composition B was prepared in the same manner as the composition A except that 0.05 parts of Oil Yellow 3G manufactured by Orient Chemical Co., Ltd. was used instead of PLAS Yellow 130. The transmittance of the composition A at 365 nm was measured with a U-3210 type spectrophotometer manufactured by Hitachi Ltd., and a film thickness of 4 was obtained.
It was 25% at 00 μm and 71% at 100 μm film thickness.
Similarly, the light transmittance of the composition B was 26% at a film thickness of 50 μm and 59% at a film thickness of 20 μm.
【0034】調製した感光性レジストを上記処理したア
ルミニウム基板上に、旭化成工業(株)製SR−B装置
を用いて塗布した。この際、レジスト層がそれぞれ表1
の厚みになるようにスペーサーで調節した。所定のガラ
スマスクとオーク社製平行光方式光源を用いてマスク露
光・現像(ほう酸ソーダ1%溶液、40℃、吐出圧力
0.1kg/cm2 )を行い、アルミニウム基板上に幅
6〜40μmで、所定の高さの樹脂画像パターンを作製
した。The prepared photosensitive resist was coated on the above-treated aluminum substrate using an SR-B apparatus manufactured by Asahi Kasei Corporation. At this time, the resist layers are shown in Table 1 respectively.
The thickness was adjusted with a spacer. Mask exposure / development (sodium borate 1% solution, 40 ° C., discharge pressure 0.1 kg / cm 2 ) was performed using a predetermined glass mask and a parallel light source manufactured by Oak Co., and a width of 6 to 40 μm was applied on an aluminum substrate. , A resin image pattern having a predetermined height was prepared.
【0035】得られた樹脂画像パターンに、ハーショウ
村田社製ピロリン酸銅メッキ液を用いて、陰極の電流密
度3A/dm2 の条件で、表1に示す膜厚のメッキ銅皮
膜を析出させ、パターン導体を形成した。得られた基板
の表面に接着剤(セメダインEP008、EP170)
をスクリーン印刷し、ガラスエポキシ絶縁基板上に転写
・接着した後、アルミニウム基板を10%塩酸でエッチ
ング除去し、厚膜パターン導体を得た。On the resulting resin image pattern, a copper copper plating solution having a thickness shown in Table 1 was deposited using a copper pyrophosphate plating solution manufactured by Hersho Murata Co., Ltd. under conditions of a current density 3 A / dm 2 of the cathode, A pattern conductor was formed. Adhesive (cemedine EP008, EP170) on the surface of the obtained substrate
Was screen-printed, transferred and adhered to a glass epoxy insulating substrate, and the aluminum substrate was removed by etching with 10% hydrochloric acid to obtain a thick film pattern conductor.
【0036】得られた基板を2cm角に切断し、エポキ
シ樹脂で硬化させた後、研磨機により断面を鏡面研磨し
パターン形状観察を行い、さらに、単位長さ当たりの抵
抗値を測定した結果を表1に示した。表1の結果から明
らかなように本発明で得られる厚膜パターン導体は、配
線ピッチ100μm未満の高密度配線が可能であり、さ
らに1cm当たりの抵抗値が極めて小さいことが分か
る。The obtained substrate was cut into 2 cm square pieces, cured with an epoxy resin, the cross section was mirror-polished with a polishing machine, the pattern shape was observed, and the resistance value per unit length was measured. The results are shown in Table 1. As is clear from the results in Table 1, the thick film patterned conductor obtained in the present invention is capable of high-density wiring with a wiring pitch of less than 100 μm, and has a very small resistance value per cm.
【0037】[0037]
【実施例3】光吸収剤を表2に示すような各種類、濃度
で用いた他は実施例2の組成物Bと同様な方法で感光性
樹脂組成物を調製し、厚み80μmで365nmにおけ
る透過率を測定した。次に、実施例1と同様な方法で作
成した感光性樹脂、露光・現像装置を使用し、40μm
ピッチ(25本/mm配線)、高さ80μmのレジスト
パターンを作成し、ハーショウ村田社製ピロリン酸銅メ
ッキ液を用いて、陰極の電流密度3A/dm2 の条件
で、80μmのメッキ銅皮膜を析出させ、パターン導体
を形成した。Example 3 A photosensitive resin composition was prepared in the same manner as in the composition B of Example 2 except that the light absorbers were used in the respective types and concentrations shown in Table 2, and the thickness was 80 μm and the wavelength was 365 nm. The transmittance was measured. Next, using a photosensitive resin prepared in the same manner as in Example 1 and using an exposure / developing apparatus, 40 μm
A resist pattern having a pitch (25 lines / mm wiring) and a height of 80 μm is prepared, and a copper copper film having a thickness of 80 μm is formed under the condition of a cathode current density of 3 A / dm 2 using a copper pyrophosphate plating solution manufactured by Harshaw Murata. Precipitation was performed to form a patterned conductor.
【0038】得られた基板の表面に接着剤(セメダイン
EP008、EP170)をスクリーン印刷し、ガラス
基板上に転写・接着した後、アルミニウム基板を10%
塩酸でエッチング除去し、厚膜パターン導体を得た。得
られた導体の形状、抵抗値を表3に示す。表3のなかで
試料No.5、6は本発明の実施例外であり、比較例で
ある。感光性樹脂組成物の透過率が75%以上である場
合、あるいは15%以下である場合は配線ピッチ50μ
m未満の高密度配線は極めて困難であることが分かる。
透過率が75%以上の場合、露光・現像時のカブリ現象
によりメッキ導体が部分的に析出せず、断線が起こりや
すい。また、透過率が15%以下の場合レジストの硬化
が不十分で現像時にレジストパターンが剥離したり、メ
ッキ時にメッキ銅がレジストと基板の間に潜り込んだり
して導体間の短絡が起こりやすい。An adhesive (cemedine EP008, EP170) was screen-printed on the surface of the obtained substrate, transferred and adhered on a glass substrate, and then an aluminum substrate was made 10%.
It was removed by etching with hydrochloric acid to obtain a thick film patterned conductor. Table 3 shows the shape and resistance of the obtained conductor. In Table 3, the sample No. Reference numerals 5 and 6 are implementation exceptions of the present invention and are comparative examples. If the transmittance of the photosensitive resin composition is 75% or more, or 15% or less, the wiring pitch is 50 μm.
It can be seen that high-density wiring of less than m is extremely difficult.
When the transmittance is 75% or more, the plated conductor is not partially deposited due to the fogging phenomenon at the time of exposure / development, and the disconnection is likely to occur. Further, when the transmittance is 15% or less, the resist is not sufficiently cured and the resist pattern is peeled off at the time of development, or the plated copper is sunk between the resist and the substrate at the time of plating, which is likely to cause a short circuit between the conductors.
【0039】これに対し、試料No.7、8では配線ピ
ッチ50μm未満の高密度配線が可能であり、さらに単
位当たりの抵抗値も0.1Ω以下で極めて低抵抗であ
る。On the other hand, the sample No. In Nos. 7 and 8, high-density wiring with a wiring pitch of less than 50 μm is possible, and the resistance value per unit is 0.1Ω or less, which is extremely low resistance.
【0040】[0040]
【表1】 [Table 1]
【0041】[0041]
【表2】 [Table 2]
【0042】[0042]
【表3】 [Table 3]
【0043】[0043]
【発明の効果】本発明の感光性樹脂組成物は光重合開始
剤と光吸収剤の組み合わせで液状感光性レジストの透過
率を15〜75%にしたことにより、未露光部に回り込
む光を効率よく吸収できるため解像度が高く、未露光部
の樹脂残渣がきわめて少ないためにメッキ不良による断
線もきわめて少なく、配線密度が高い、しかも低抵抗な
厚膜導体回路、異ピッチ接続部品を製造することができ
る。EFFECTS OF THE INVENTION The photosensitive resin composition of the present invention uses a combination of a photopolymerization initiator and a light absorber to adjust the transmittance of the liquid photosensitive resist to 15 to 75%, so that the light circling to the unexposed area can be efficiently absorbed. Since it can be absorbed well, the resolution is high, and there are very few resin residues in the unexposed area, so there are very few disconnections due to defective plating, and it is possible to manufacture thick film conductor circuits with high wiring density and low resistance, and different pitch connection parts. it can.
Claims (2)
〜420μmで用いられる感光性樹脂組成物において、
エチレン性不飽和基を有し、分子量が500〜5000
0のオリゴマーもしくはプレポリマーと、1分子中に少
なくとも1つのアクリロイル基もしくはメタクリロイル
基をもつ重合性単量体を少なくとも1種と、前記波長で
の光吸収極大におけるモル吸光係数が5〜1000リッ
トル/mol・cmの光重合開始剤を0.1〜10重量
%と、光吸収剤を0.01〜1重量%とを含み、光透過
率が15〜75%であることを特徴とする厚膜導電性回
路用感光性樹脂組成物。1. A film thickness of 20 to 400 μm and a light wavelength of 300.
In the photosensitive resin composition used in the range of ~ 420 μm,
It has an ethylenically unsaturated group and has a molecular weight of 500 to 5,000.
0 oligomer or prepolymer, at least one polymerizable monomer having at least one acryloyl group or methacryloyl group in one molecule, and a molar absorption coefficient at a light absorption maximum at the above wavelength of 5 to 1000 liter / A thick film comprising 0.1 to 10% by weight of a mol · cm photopolymerization initiator and 0.01 to 1% by weight of a light absorber, and having a light transmittance of 15 to 75%. Photosensitive resin composition for conductive circuits.
樹脂組成物を導電性基板上に塗布し、露光、現像して厚
膜樹脂画像を形成した後、導電性基板上に厚膜メッキを
施し、導電性基板を除去することを特徴とする厚膜導電
性回路の製造方法。2. The thick film conductive circuit photosensitive resin composition according to claim 1 is applied onto a conductive substrate, exposed and developed to form a thick film resin image, and then the thick film is applied onto the conductive substrate. A method of manufacturing a thick film conductive circuit, which comprises performing film plating and removing the conductive substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP07200969A JP3076741B2 (en) | 1994-12-27 | 1995-08-07 | Photosensitive resin composition for thick film conductive circuit and method for producing thick film conductive circuit using the same |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32532694 | 1994-12-27 | ||
JP6-325326 | 1994-12-27 | ||
JP07200969A JP3076741B2 (en) | 1994-12-27 | 1995-08-07 | Photosensitive resin composition for thick film conductive circuit and method for producing thick film conductive circuit using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08234427A true JPH08234427A (en) | 1996-09-13 |
JP3076741B2 JP3076741B2 (en) | 2000-08-14 |
Family
ID=26512495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP07200969A Expired - Fee Related JP3076741B2 (en) | 1994-12-27 | 1995-08-07 | Photosensitive resin composition for thick film conductive circuit and method for producing thick film conductive circuit using the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3076741B2 (en) |
-
1995
- 1995-08-07 JP JP07200969A patent/JP3076741B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3076741B2 (en) | 2000-08-14 |
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