JPH08203799A - Aligner and pattern formation - Google Patents

Abstract

PURPOSE: To eliminate distortion of an optical image by forming a pattern to be transferred by a signal from an outside by using a substance whose optical characteristic changes according to a signal provided form an outside for a mask part. CONSTITUTION: A wiring layer 202 is connected to a light emitting element 201 arranged in a cell form and a pattern generation part 200 is constituted. Light (wavelength λ1 ) from the pattern generation part 200 is cast on a mask part 205 formed of a photochromic material through a reduction lens 209 and a mirror 204. Since the photochromic material absorbs light from the light emitting element 201, its permeability to light (wavelength λ2 ) from a light source 206 changes. Light projected from the light source 206 is injected to the mask part 205 and is further reduced and projected on a processing substrate 209 through a reduction projection optical system 207. In the process, a filter 208 for removing a wavelength of a light emitting element 201 is inserted between the mask part 205 and the reduction optical system 207.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus used in a lithography process in manufacturing a semiconductor device and a pattern forming method using the exposure apparatus.

[0002]

2. Description of the Related Art In recent years, with the complexity of integrated circuit manufacturing processes, the resist pattern transfer required for device fabrication has reached dozens of processes. At present, since an exposure mask is manufactured for each transfer step, the same number of exposure masks as the number of transfer steps are required to create an integrated circuit.
For this reason, the time, equipment, and funds required to create the exposure mask are enormous.

To address this problem, an exposure mask has been proposed in which a desired pattern is obtained according to a signal from the outside, rather than forming a pattern on the mask in advance (Japanese Patent Laid-Open No. 4-90545). As an example thereof, there is a liquid crystal that has been widely put into practical use as a display, an optoelectronic element, or the like, which utilizes an optical change when an electric field is applied. This is because the liquid crystal is arranged in cells and an electric signal according to the desired pattern to be transferred onto the wafer is externally applied to change the optical constant with respect to the exposure wavelength in a part of the cell to form the desired pattern. To get it.

However, when a pattern image obtained by such a mask is transferred onto the wafer, wiring and electrodes for transmitting a signal from the outside to the mask are present inside the mask, so that the light transmitted through this area is There is a drawback that the optical image is distorted due to attenuation and change in phase. Further, when the liquid crystal or the like is used as it is as an exposure mask, there is a problem that its cell size is large and it is not suitable for forming a fine pattern on a substrate to be processed.

In order to form a fine pattern, it is essential to shorten the wavelength of the exposure light source. However, when the light transmittance, reflectance or phase of the liquid crystal is changed, the light targeted by the liquid crystal is not necessarily the exposure wavelength. It is not always the same, and it is generally difficult to control short-wavelength light suitable for the exposure wavelength with a liquid crystal.

[0006]

As described above, conventionally, when a pattern is exposed using an exposure mask that obtains a desired pattern in response to a signal from the outside, the wiring and electrode regions existing inside the mask are transmitted. Attenuating light and changing the phase occur, and the optical image is distorted. Further, the wavelength of the pattern image obtained with liquid crystal or the like is not necessarily suitable for the exposure wavelength, and it is desired to obtain the pattern image suitable for the exposure wavelength.

The present invention has been made in consideration of the above circumstances, and an object thereof is to be able to form a mask image of a pattern to be transferred by a signal from the outside,
Another object of the present invention is to provide an exposure apparatus capable of eliminating distortion of an optical image due to wirings and electrodes for transmitting a signal from the outside, and a pattern forming method using the exposure apparatus.

Another object of the present invention is to form a mask image of a pattern to be transferred by a signal from the outside, and to use this mask image to perform exposure at a wavelength suitable for exposure. An object of the present invention is to provide an exposure apparatus that can be used and a pattern forming method using the same.

[0009]

In order to solve the above problems, the present invention employs the following configurations. That is, the present invention (Claim 1) emits the pattern data generating section for generating the pattern data corresponding to the pattern to be exposed and the first light having the different wavelength or intensity according to the data of the pattern data generating section. A pattern generating portion in which a plurality of regions to be formed are arranged in a cell shape, and the first
Of the material whose optical characteristics change with respect to the second light according to the irradiation state of the second light, a light source for irradiating the mask portion with the second light, and a mask portion by the irradiation of the second light. An exposure apparatus comprising a transfer optical system for transferring the pattern obtained in 1. onto a substrate to be processed, which is an optical system that changes with respect to second light by irradiating the mask portion with first light. The characteristic is at least one of the transmittance of the second light or the phase of the transmitted light, or at least one of the reflectance of the irradiation surface or the phase of the reflected light with respect to the second light.

Preferred embodiments of the present invention are as follows. (1.1) The substance whose optical characteristic with respect to the second light changes depending on the irradiation state of the first light on the mask portion is a photochromic material. (1.2) A reduction optical system is built in between the pattern generation part and the mask part. (1.3) A filter for removing the first light is incorporated between the mask part and the substrate to be processed. (1.4) The pattern generator does not include the wavelength of the second light.
Each cell has a means for generating light with a wavelength of m (m is an integer of 1 or more), and causes a change in optical characteristics with respect to the second light by a difference in a combination of emitting light with a wavelength of m. To be.

When the mask portion is used as a reflection type, (1.5) a light transmission medium is formed on the reflection region, an antireflection film is formed on the light transmission medium, and the phase difference between at least two reflection regions is It should be set to approximately 180 degrees. (1.6) The light transmission medium should be air, nitrogen atmosphere or vacuum. (1.7) The light transmission medium shall be composed of a solid material with high transmittance. (1.8) To form an antireflection film with a reflectance of 1% or less on the light transmission medium. (1.9) At least two reflection areas (complex refractive index <Nx>
= Nx-ikx) (x = 1, 2) with complex refractive index <na
A light transmission medium having> = na-ika is arranged and the optical constant in the reflectance region satisfies the relationship of n1 ² + k1 ² <na ² + ka ² <n2 ² + k2 ² . (1.10) nx ² + kx ² is infinitely equal to na ² + ka ² . (1.11) The refractive index na of the light transmission medium is the difference of the squares of the optical constants | (n1 ² + k1 ² ) − (n2 ² + k2) where nx (x = 1, 2) is the refractive index of the reflective material. ² ) Select a substance so that | is as small as possible. At this time, if the complex refractive index na of the light transmission medium is large, an antireflection film should be provided to suppress reflection on this surface. (1.12) Among the regions having complex refractive index <N1> or <N2>, the smaller intensity transmission region has a reflection region of 1 to 20% with respect to the reflection region having a large reflectance. (1.13) Among regions having a complex refractive index <N1> or <N2>, a smaller intensity transmission region has a reflection region of 90 to 100% with respect to a reflection region having a large reflectance, and 0 Includes ~ 20% light-shielding area. (1.14) Complex refractive index of light transmission medium <Na> = na-kia
The extinction coefficient ka must be as close to 0 as possible in order to exclude the attenuation of the exposure light intensity in this light transmission medium.

Further, according to the present invention (claims 2 and 3), a pattern data generating section for generating pattern data corresponding to a pattern to be exposed and a reflection for the first light according to the data of the pattern data generating section. A pattern generating section in which a plurality of substances that change the wavelength or intensity of light or transmitted light are arranged in a cell shape, a first light source for irradiating the pattern generating section with first light, and the pattern generating section A mask portion in which a substance whose optical characteristics change with respect to the second light according to the light irradiation state is arranged, a light source for irradiating the mask portion with the second light, and a mask portion for irradiating the second light An exposure apparatus comprising: a transfer optical system for transferring the obtained pattern onto a substrate to be processed, which is changed with respect to second light by irradiating the mask section with light from the pattern generating section. Optical characteristics But at least one of the transmission or transmission light of the phase with respect to the second light, or at least the second reflectance or reflected light phase of the irradiated surface to light 1
It is characterized by being one.

The preferred embodiments of the present invention are as follows. (2.1) The substance whose optical characteristic with respect to the second light changes according to the irradiation state of the light from the pattern generation part on the mask part is
It must be a photochromic material. (2.2) A reduction optical system must be installed between the pattern generator and mask. (2.3) A filter for removing the transmitted light of the first light or the reflected light of the first light is incorporated between the mask portion and the substrate to be processed. (2.4) The reflective area or transmissive area should be made of liquid crystal.

When the mask portion is used as a reflection type, (2.5) a light transmission medium is formed on the reflection region, an antireflection film is formed on the light transmission medium, and the phase difference between at least two reflection regions is It should be set to approximately 180 degrees. (2.6) The light transmission medium should be air, nitrogen atmosphere or vacuum. (2.7) The light transmission medium shall be composed of a solid material with high transmittance. (2.8) An antireflection film having a reflectance of 1% or less should be formed on the light transmission medium. (2.9) At least two reflection areas (complex refractive index <Nx>
= Nx-ikx) (x = 1, 2) with complex refractive index <na
A light transmission medium having> = na-ika is arranged and the optical constant in the reflectance region satisfies the relationship of n1 ² + k1 ² <na ² + ka ² <n2 ² + k2 ² . (2.10) nx ² + kx ² is infinitely equal to na ² + ka ² . (2.11) The refractive index na of the light transmission medium is the difference of the squares of the optical constants | (n1 ² + k1 ² ) − (n2 ² + k2) where nx (x = 1, 2) is the refractive index of the reflective material. ² ) Select a substance so that | is as small as possible. At this time, if the complex refractive index na of the light transmission medium is large, an antireflection film should be provided to suppress reflection on this surface. (2.12) Of the regions having complex refractive index <N1> or <N2>, the smaller intensity transmission region has a reflection region of 1 to 20% with respect to the reflection region having a large reflectance. (2.13) Of the regions having complex refractive index <N1> or <N2>, the smaller intensity transmission factor is 90 to 100% with respect to the larger reflection region having a higher reflectance, and 0 Includes ~ 20% light-shielding area. (2.14) Complex refractive index of optical transmission medium <Na> = na-kia
The extinction coefficient ka must be as close to 0 as possible in order to exclude the attenuation of the exposure light intensity in this light transmission medium.

The present invention (Claim 5) is a pattern forming method for forming a desired pattern on a photosensitive resin layer on a substrate to be processed, wherein the exposure apparatus according to any one of claims 1 to 4 is used. The mask pattern image obtained through the mask portion is projected and exposed on the substrate to be processed on which the photosensitive resin layer is formed through the transmission optical system or the reflection optical system, and the difference in the amount of light on the substrate is processed. It is characterized in that the photosensitive resin layer is removed by utilizing the desired area or the area other than the desired area.

Here, the following are preferred embodiments of the present invention. (3.1) When the mask pattern of the exposure mask part has at least a semi-transparent formation area size / semi-transparent formation area size of 0.3 or less or 3 or more for the exposure wavelength, the coherence factor of illumination is 0.5 or less. I try to be there. (3.2) When the mask pattern of the exposure mask part has at least a part where the size of the semi-transparent forming part / the size of the semi-transparent forming part for the exposure wavelength is 0.3 to 3, the annular illumination is used for illumination. . (3.3) At least a part of the illumination is adjusted so that the phase or the transmittance of the light transmitted through the other part is different. (3.4) When the mask pattern of the exposure mask portion has at least a portion where the size of the semitransparent forming portion / the size of the semitransparent forming portion for the exposure wavelength is 0.3 to 3, the illumination is n with respect to the optical axis.
Irradiation is performed by a diaphragm having an opening at a rotationally symmetrical position (n = 2, 4, 8). (3.5) At least a part of the illumination is adjusted so that the phase or the transmittance of the light passing through the other part is different. (3.6) When the mask pattern of the exposure mask portion has at least a portion where the size of the semi-transparent forming portion / the size of the semi-transparent forming portion with respect to the exposure wavelength is 0.3 to 3, illumination is performed a plurality of sets n times with respect to the optical axis Irradiation is performed by a diaphragm having openings at target positions (n = 2, 4, 8). (3.7) At least a part of the illumination is adjusted so that the phase or the transmittance of the light passing through the other part is different.

[0017]

FIG. 1 is a schematic diagram showing the structure of the exposure apparatus of the present invention (claim 1) for generating an exposure pattern from the pattern data generating section to the mask section. Elements 101 that emit light in response to a signal from the pattern data generator 103 are arranged in a cell shape in the pattern generator 100, and a wiring layer 102 that transmits a signal from the pattern data generator 103 to the element 101 is formed under the cells 101. There is. Each element is divided into a light emitting area and a non-light emitting area according to the information of the pattern data generator 103. The light 104 (wavelength λ1) of this pattern generation unit 100
Is reduced and projected on the light change material 112 formed on the mask portion 110 via the reduction optical system 105.

Although the lens is used as the reduction optical system in FIG. 1, a mirror or a combination of the lens and the mirror may be used. The light-changing substance 112 formed on the substrate 111 is selected to have a property that the optical constant in the exposure light (wavelength λ2) changes when it is irradiated with light having a wavelength λ1. As a result, a desired exposure mask pattern can be obtained only by inputting data to the pattern data generator 103. And the mask portion 11
0 is irradiated with exposure light and a pattern image obtained as transmitted light or reflected light thereof is transferred onto the exposed substrate, and therefore wirings and electrodes for transmitting a signal from the outside to the mask are transferred onto the exposed substrate. The desired pattern can be transferred with high accuracy.

Further, by making the phase difference between the transmitted light or the reflected light adjacent to the pattern obtained by irradiating the mask portion 110 with the light of λ2, it can function as a phase shift mask. Hereinafter, the case of functioning as a reflection type phase shift mask will be described. Here, the surface reflection on the thin film will be briefly described. Since the optical path difference is the same in the phase difference of the light reflected by the reflecting material and the upper surface of the phase shift portion, it is determined by the optical constant of each material. Here, it is defined as follows.

Optical constant of reflection material <Nx> = nx-ikx (x = 1, 2) (1) Optical constant of light transmission medium <Na> = na-ika (2) Reflection material and phase shift part Consider the interference effect of light reflected from the upper surface. When ρx (x = 1, 2) is the reflectance on the surface of each reflecting material, ρx is expressed as follows.

Ρx = {<Nx>-<Na>} / {<Nx> + <Na>} = {(nx-na) -i (kx-ka)} / {(nx + na) -i (kx + ka)} (3) Phase θx (x
= 1, 2) is expressed as follows.

Θx = tan ⁻¹ (bx / ax) (4) Here, ax = nx ² −na ² + kx ² −ka ² (5) bx = 2 (nx ka −na kx) (6).

Therefore, the phase difference Δ between the reflecting material and the phase shift portion is Δ = θ1−θ2 = tan ⁻¹ (b1 / a1) −tan ⁻¹ (b2 / a2) (7) (however, −90 It is expressed as ° <θx <90 °).

[0024] When the extinction coefficient ka in the optical transmission medium is ka = 0, the above equation ax, bx becomes ^{ax = nx 2 + kx 2 -na} 2 (8) bx = -2na kx (9). At this time, the reflectance Rx (x = 1, 2) is Rx = {(nx-na) ² + kx ² } / {(nx + na) ² + kx ² } (10). To make Δ = 180 ° (θ1, θ2)
= (~ 90, ~ -90) or (~ -90, ~ 90) is required. Here, the symbol ~ means that it is as close as possible to the value on the right.

At this time, nx ² + kx ^{2 to} na ² (x =
1 and ² , and n1 ² + k1 ² <na ² <n2 ² + k2 ² (11).

Here, the difference in reflectance │R1 -R2│ is │R
In the case of 1-R2 | ~ 0, the characteristic is close to that of the transmission shifter edge type, and in the case of | R1-R2 | >> 0, the characteristic is similar to that of the transmission halftone type. In this case, in order to increase the intensity reflectance, it is desirable to use a material having a small refractive index and a large extinction coefficient.

Further, the difference of the squares of the optical constants | (n1 ² +
k1 ² )-(n2 ² + k2 ² ) | is made as small as possible. Further, the extinction coefficient ka of the light transmission medium is preferably ka = 0 in order to eliminate the attenuation of the exposure light.

When the refractive index na of the light transmission medium is large, the intensity reflectance 1 is set in order to suppress reflection on this surface.
% Or less, it is desirable to provide an antireflection film. here,
The value of 1% or less is based on the result of obtaining the depth of focus that satisfies the dimensional variation (within ± 10%) of the resist pattern formed by changing the reflectance from the light transmission medium. . Specifically, for a 0.6 μm line & space pattern, a photoresist (GX
250) was coated on a Si wafer to a thickness of 1.3 μm and exposed. The exposure condition is a wavelength of 0.436 μm and NA =
0.54 and σ = 0.5.

The results are shown in FIG. From this, it was shown that the bleeding of light was within the allowable range up to 1% when the depth of focus was allowed up to 1.5 μm. The bleeding of light, that is, the reflectance of the light transmission medium may be determined by the desired depth of focus or dimensional variation. Materials having photochromism, such as spiropyrans and dithizones, exhibit reversibility of structural change upon irradiation with and irradiation with light having a wavelength of λ1 and show little or no structural change with respect to λ2. Any one may be used as long as it does not change.

Further, according to the present invention, the wavelength of the first light from the pattern generating portion and the wavelength of the second light for exposure can be independently selected, so that a light emitting diode or the like can be used as the first light. By selecting a wavelength that can be easily emitted and a wavelength that is optimal for exposure as the second light, it is possible to efficiently perform the mask image formation and exposure by an external signal.

[0031]

Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) FIG. 2 is a schematic configuration diagram schematically showing an exposure apparatus according to the first embodiment of the present invention. A light emitting element 201 such as a light emitting diode is arranged in a cell shape, and a wiring layer 202 is connected to the light emitting element 201 so that the pattern generating section 2
00 is configured. The wiring layer 202 transmits the signal from the pattern data generator 203 to the light emitting element 201,
The light emitting element 201 is divided into a portion that emits light and a portion that does not emit light according to the information from the pattern data generator 203.

The first light (wavelength λ 1) from the pattern generating section 200 passes through the reduction lens 209 and the mirror 204,
The mask portion 205 made of a photochromic material is irradiated. The photochromic material is made of, for example, spiropyrans, dithizone, or the like, and absorbs light from the light emitting element 201 to change the transmittance with respect to the second light (wavelength λ2) from the light source 206. This allows the mask unit 205 to create a mask image of a desired pattern simply by inputting data to the pattern data generation unit 203. The mirror 204 is selected to have a property of totally transmitting the light emitted from the light source 206.

The second light emitted from the light source 206 is incident on the mask portion 205 having a pattern formed thereon, and further passes through the reduction projection optical system 207 such as a projection lens and the processed substrate 20.
9 is reduced and projected. At this time, a filter 208 for removing the wavelength of the light emitting element 201 is inserted between the mask portion 205 and the reduction optical system 207 so that the second light from the light emitting element 201 is not transferred onto the substrate 209 to be processed. .

According to this embodiment, a desired pattern can be transferred onto the substrate 209 to be processed simply by inputting data to the pattern data generator 203. When a line and space pattern was transferred onto the wafer using a wafer as the substrate 209 to be processed, a 0.35 μm resist pattern could be formed. In this case, light is not blocked by the wiring 202 for transmitting a signal from the outside, and the occurrence of distortion of the optical image due to the wiring 202 can be prevented. Further, since the wavelengths of the first and second lights are independently selected, the first light is the light that can be emitted by the light emitting element 201 such as a light emitting diode, and the second light.
Light suitable for exposure can be selected as the light.

The substrate 209 to be processed is not limited to the wafer, but may be based on a metal such as quartz or Al. Further, the light emitting element is not limited to the light emitting diode, and may be any one capable of forming minute light emitting cells in a two-dimensional manner. Further, in this embodiment, the light transmitted through the mask portion 205 is transferred onto the substrate 209 to be processed, but an optical system for transferring the reflected light from the mask portion 205 onto the substrate 209 to be processed may be used. Further, in the present embodiment, the optical characteristics of the photochromic material are changed by the light intensity of the light emitting element 201, but the optical characteristics of the photochromic material may be changed by irradiating light of different wavelengths. (Embodiment 2) FIG. 3 is a schematic configuration diagram schematically showing an exposure apparatus according to a second embodiment of the present invention. The reflection pattern generation unit 300 is formed by the liquid crystal element 301 and the wiring layer 302. The wiring layer 302 transmits the signal from the pattern data generator 303 to the liquid crystal element 301, and the reflectance of each cell of the liquid crystal element 301 is independently variable. More specifically, the orientation of the liquid crystal is changed by the potential applied to the pixel electrode to change the refractive index of the liquid crystal, which changes the reflectance at the interface of the liquid crystal for the wavelength λ1 of the first light source 305. Has become.

The light emitted from the first light source 305 is reflected by the pattern generator 300, the reduction lens 311, and the mirror 3.
Mask part 3 formed of a photochromic material through 06
It is irradiated at 07. The photochromic material absorbs the light reflected by the reflective pattern generating section 300, so that the transmittance with respect to the wavelength of the second light source 308 changes. As a result, the mask image of the desired pattern can be obtained by the mask unit 307 only by inputting the data to the pattern data generation unit 303. The mirror 306 is selected to have a property of totally transmitting the light emitted from the second light source 308.

The light emitted from the second light source 308 enters the patterned mask portion 307, and is further reduced and projected on the substrate 312 to be processed through the reduction optical system 309. At this time, the mask portion 30 is provided so that the light from the reflection pattern generation portion 300 is not transferred onto the substrate 312 to be processed.
7 and the reduction optical system 309, a filter 310 is inserted.

According to this embodiment, it is possible to transfer a desired pattern onto the substrate 312 to be processed simply by inputting data to the pattern data generator 303. When a wafer was used as the substrate to be processed 312 and the hole pattern was transferred onto the wafer, a resist pattern of 0.4 μm could be formed. The substrate 312 to be processed is not limited to a wafer, but may be a substrate based on a metal such as quartz or Al used as a substrate for liquid crystal, a disk, a CDROM, or an organic resin substrate. Further, in the present embodiment, the light transmitted through the mask portion 307 is transferred onto the substrate to be processed 312, but the reflected light from the mask portion 307 is processed to the substrate 3 to be processed.
An optical system for transferring onto 12 may be used.

In this embodiment, the pattern generating section 300 made of a liquid crystal element is used to change the reflectance with respect to the light from the first light source 305, but it may be used to change the transmittance. In this case, although the problem that the first light is blocked by the wiring layer 302 remains, the light controlled by the liquid crystal and the exposure light can be independently selected, and the mask image formation and the exposure are efficiently performed by the external signal. be able to.

In the pattern generating section 300, the first light source 3
Although the intensity of the reflected light or the transmitted light with respect to the light from 05 is changed, the wavelength of the reflected light or the transmitted light may be changed instead. Specifically, costellic liquid crystal or the like may be used. (Embodiment 3) FIG. 4 is a schematic block diagram schematically showing an exposure apparatus according to a third embodiment of the present invention. Light emitting element 4
01 are arranged in a cell shape, and the wiring layer 402 is formed under the cell to form a pattern generating portion. Wiring layer 40
2 transmits a signal from the pattern data generating unit 403 to the light emitting element 401, and the light emitting element 401 is separated into a portion that emits light and a portion that does not emit light according to the information from the pattern data generating unit 403. The emitted light is transferred via the reduction optical system 404 onto the substrate 405 to which the photosensitive material is applied.

According to this embodiment, it is possible to transfer a desired pattern onto the substrate 405 to be processed simply by inputting data to the pattern data generator 403. A light emitting diode or the like may be used as the light emitting element 401. Further, as the photosensitive material, one having a photosensitive property with respect to the emission wavelength may be selected. When a wafer is used as the substrate 405 to be processed and the hole pattern is transferred onto the wafer,
A resist pattern of 0.45 μm could be formed. The substrate 405 to be processed is not limited to a wafer, and may be a substrate based on a metal such as quartz or Al used as a substrate for liquid crystal, a disk, a CDROM, or an organic resin substrate. (Embodiment 4) For example, using the exposure apparatus of the second embodiment,
A desired pattern was exposed on a substrate coated with a resist of 1.0 μm and further developed to form a resist pattern. At this time, an ArF excimer laser is used as the second light source 308, and a reduction optical system 309 such as a projection lens is used.
Reflective optical system instead of (NA = 0.45, σ = 0.5)
Was used. As a result, a 0.2 μm line & space pattern can be sufficiently formed, and a depth of focus of 0.
6 μm could be achieved.

[0042]

As described above, according to the present invention, it is possible to form a pattern to be transferred by an external signal by using a material whose optical characteristics are changed by an externally applied signal in the mask portion. In addition, it is possible to eliminate the distortion of the optical image due to the wiring and electrodes for transmitting the signal from the outside. Then, by transferring the optical image obtained through the mask portion onto the substrate to be processed, it becomes possible to form a desired pattern with high accuracy.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a configuration for generating an exposure pattern from a pattern data generation unit to a mask unit of an exposure apparatus of the present invention.

FIG. 2 is a schematic configuration diagram schematically showing the exposure apparatus according to the first embodiment.

FIG. 3 is a schematic configuration diagram schematically showing an exposure apparatus according to a second embodiment.

FIG. 4 is a schematic configuration diagram schematically showing an exposure apparatus according to a third embodiment.

FIG. 5 is a diagram showing a depth of focus due to bleeding of light.

[Explanation of symbols]

100, 200, 300, 400 ... Pattern generating section 101, 201, 401 ... Light emitting element 102, 202, 302, 402 ... Wiring 103, 203, 303, 403 ... Pattern data generating section 104 ... Light from pattern generating section 105, 207, 309, 404 ... Reduction optical system 110, 205, 307 ... Mask part 111 ... Substrate 112 ... Light changing substance 204, 306 ... Mirror 206 ... Light source 208, 310 ... Filter 209 ... Reduction lens 301 ... Liquid crystal element 305 ... Light source 1 308 ... Light source 2 209, 312, 405 ... Work substrate

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI Technical display location G03F 7/20 521 H01L 21/30 520 A 528

Claims (5)

[Claims] 1. A cell-shaped pattern data generator that generates pattern data corresponding to a pattern to be exposed and a region that emits a first light having a different wavelength or intensity according to the data of the pattern data generator. A plurality of pattern generating parts, a mask part in which a substance whose optical characteristic with respect to the second light changes according to the irradiation state of the first light from the pattern generating part, and a mask part A light source for irradiating the second light and a transfer optical system for transferring the pattern obtained in the mask portion onto the substrate to be processed by the second light irradiation are provided, and the mask portion is irradiated with the first light. By doing so, at least one of the transmittance of the second light or the phase of the transmitted light, or the reflectance of the irradiation surface or the phase of the reflected light with respect to the second light can be changed. At least 1 An exposure apparatus characterized by being one. 2. A cell is a pattern data generator that generates pattern data corresponding to a pattern to be exposed, and a substance that changes the wavelength or intensity of the reflected light with respect to the first light according to the data of the pattern data generator. A plurality of pattern generating portions, a first light source for irradiating the pattern generating portion with the first light, and an optical for the second light according to the irradiation state of the reflected light from the pattern generating portion. A mask portion in which a substance whose characteristics change is arranged, a light source for irradiating the mask portion with second light, and a pattern for transferring a pattern obtained by the mask portion by the second light irradiation onto a substrate to be processed A transfer optical system, wherein the optical characteristic that changes with respect to the second light by irradiating the mask section with the reflected light from the pattern generating section has a second optical characteristic.
At least one of the transmittance of the light or the phase of the transmitted light, or the reflectance of the irradiation surface for the second light or the phase of the reflected light. 3. A cell is a pattern data generator that generates pattern data corresponding to a pattern to be exposed, and a substance that changes the wavelength or intensity of transmitted light with respect to the first light according to the data of the pattern data generator. A plurality of pattern generating portions, a first light source for irradiating the pattern generating portion with the first light, and an optical device for the second light according to the irradiation state of the transmitted light from the pattern generating portion. A mask portion in which a substance whose characteristics change is arranged, a light source for irradiating the mask portion with second light, and a pattern for transferring a pattern obtained by the mask portion by the second light irradiation onto a substrate to be processed A transfer optical system, wherein when the mask portion is irradiated with the transmitted light from the pattern generating portion, the optical characteristic that changes with respect to the second light is
At least one of the transmittance of the light or the phase of the transmitted light, or the reflectance of the irradiation surface for the second light or the phase of the reflected light. 4. The pattern generating section is a liquid crystal element that changes the intensity or wavelength of the reflected light or the transmitted light with respect to the first light according to the pattern data. Exposure equipment. 5. A photosensitive resin layer is formed by using the exposure apparatus according to claim 1 through a mask pattern image obtained through the mask portion through a transmissive optical system or a reflective optical system. A method for pattern formation, comprising: performing projection exposure on the processed substrate, and removing the photosensitive resin layer other than a desired region by utilizing the difference in the amount of light on the processed substrate.