JPH08185997A - Microwave plasma device - Google Patents
Microwave plasma deviceInfo
- Publication number
- JPH08185997A JPH08185997A JP6327031A JP32703194A JPH08185997A JP H08185997 A JPH08185997 A JP H08185997A JP 6327031 A JP6327031 A JP 6327031A JP 32703194 A JP32703194 A JP 32703194A JP H08185997 A JPH08185997 A JP H08185997A
- Authority
- JP
- Japan
- Prior art keywords
- deposition
- cylinder
- plasma
- microwave
- generation chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体素子基板のエッ
チング、薄膜形成等に使用するマイクロ波プラズマ装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave plasma device used for etching a semiconductor element substrate, forming a thin film and the like.
【0002】[0002]
【従来の技術】半導体素子の製造において、減圧下にあ
る真空容器内にマイクロ波を導入することによりプラズ
マを生成させ、このプラズマを試料の表面に照射してエ
ッチング、薄膜形成等の処理を行うマイクロ波プラズマ
装置が用いられている。2. Description of the Related Art In the manufacture of semiconductor devices, plasma is generated by introducing microwaves into a vacuum vessel under reduced pressure, and the surface of a sample is irradiated with this plasma to perform etching, thin film formation, and other processing. A microwave plasma device is used.
【0003】図9は、マイクロ波プラズマ装置の1種で
ある電子サイクロトロン共鳴励起を利用するマイクロ波
プラズマ装置を示す模式的縦断面図である。図中3はプ
ラズマ生成室であり、このプラズマ生成室3の上部中央
にはマイクロ波導入口5が開口され、石英等のマイクロ
波導入窓2にて真空封止されている。このマイクロ波導
入口5には、図示しないマイクロ波発振器にその他端側
が接続された導波管1が取り付けられている。プラズマ
生成室壁4は2重構造であり、冷却水を通流させるため
の通流室6を備えている。FIG. 9 is a schematic vertical sectional view showing a microwave plasma device utilizing electron cyclotron resonance excitation, which is one type of microwave plasma device. In the figure, 3 is a plasma generation chamber, and a microwave introduction port 5 is opened at the center of the upper part of the plasma generation chamber 3 and is vacuum-sealed by a microwave introduction window 2 such as quartz. A waveguide 1 whose other end is connected to a microwave oscillator (not shown) is attached to the microwave introduction port 5. The plasma generation chamber wall 4 has a double structure and is provided with a flow chamber 6 for allowing cooling water to flow therethrough.
【0004】プラズマ生成室3の下側には試料室10が
連設されており、この試料室10内には、試料台14が
配設されており、この試料台14上にはウエハ等の試料
Sが、静電吸着等の手段にて着脱可能に載置されてい
る。また、試料室壁11にはガス導入管12が連結さ
れ、また排気装置(図示せず)に連結される排気口13
が設けられている。A sample chamber 10 is connected to the lower side of the plasma generation chamber 3, and a sample table 14 is arranged in the sample chamber 10. On the sample table 14, a wafer or the like is placed. The sample S is detachably mounted by means such as electrostatic adsorption. Further, a gas inlet pipe 12 is connected to the sample chamber wall 11, and an exhaust port 13 is connected to an exhaust device (not shown).
Is provided.
【0005】プラズマ生成室3の外側には、励磁コイル
9が周設されている。そして、プラズマ生成室3の内部
には、プラズマ生成室3の各壁が、生成されたプラズマ
の直接照射を受けないように、上部壁、側壁を覆う防着
筒7がプラズマ生成室の下部壁に防着筒保持手段8で取
り付けられている。この点について後述する。An exciting coil 9 is provided outside the plasma generating chamber 3. Inside the plasma generation chamber 3, an anti-sticking cylinder 7 covering the upper wall and the side wall is provided in the lower wall of the plasma generation chamber so that each wall of the plasma generation chamber 3 is not directly irradiated with the generated plasma. It is attached by means of the attachment prevention cylinder holding means 8. This point will be described later.
【0006】図10はプラズマ生成室3部分の拡大図で
ある。防着筒7はマイクロ波導入窓2と対向しプラズマ
生成室3の上部壁を覆う上面部7aとプラズマ生成室3
の側壁部を覆う筒部7bとからなっており、上面部7a
はマイクロ波の透過材料である石英、アルミナ等によ
り、筒部7bは、石英、アルミナ、アルミニウム等によ
って通常形成されている。上面部7aと筒部7bは一体
的に形成される場合もある。防着筒7は、防着筒保持リ
ング8a上に載置された状態で、防着筒保持リング8a
に開けられた孔8bを介してボルト8cによってプラズ
マ生成室壁4に固定保持されている。FIG. 10 is an enlarged view of the plasma generating chamber 3 portion. The deposition-inhibiting cylinder 7 faces the microwave introduction window 2 and covers the upper wall of the plasma generation chamber 3 and the upper surface portion 7a and the plasma generation chamber 3
And a cylindrical portion 7b that covers the side wall of the upper surface portion 7a.
Is usually made of quartz or alumina which is a microwave transmitting material, and the cylindrical portion 7b is usually made of quartz, alumina or aluminum. The upper surface portion 7a and the tubular portion 7b may be integrally formed. The deposition-inhibiting cylinder 7 is mounted on the deposition-inhibiting cylinder holding ring 8a, and
It is fixedly held on the plasma generating chamber wall 4 by a bolt 8c through a hole 8b opened in the.
【0007】以上のような構成のマイクロ波プラズマ装
置を使用してエッチングを行う方法について説明する
(図9参照)。A method of performing etching using the microwave plasma device having the above-described structure will be described (see FIG. 9).
【0008】先ずプラズマ生成室3内を所定の圧力まで
排気した後、ガス導入管12よりエッチング用のガスを
導入し所定の圧力とする。そして励磁コイル9にて磁界
を形成しつつマイクロ波導入窓2を介してプラズマ生成
室3内へマイクロ波を導入する。すると、プラズマ生成
室内で電子サイクロトロン共鳴励起によりプラズマが生
成する。生成したプラズマは、励磁コイル9にて形成さ
れ、試料室10へ向かうに従い磁界が低下する発散磁界
によって、試料室10内の試料Sに投射され、試料Sが
エッチングされる。First, the inside of the plasma generating chamber 3 is evacuated to a predetermined pressure, and then a gas for etching is introduced from the gas introduction pipe 12 to a predetermined pressure. Then, the microwave is introduced into the plasma generation chamber 3 through the microwave introduction window 2 while forming a magnetic field by the exciting coil 9. Then, plasma is generated by electron cyclotron resonance excitation in the plasma generation chamber. The generated plasma is formed by the exciting coil 9 and is projected onto the sample S in the sample chamber 10 by the divergent magnetic field whose magnetic field decreases toward the sample chamber 10, and the sample S is etched.
【0009】しかしながら、上記構成のマイクロ波プラ
ズマ装置においては、マイクロ波を導入しプラズマを長
時間生成すると、防着筒7がプラズマによって加熱され
熱膨張により寸法変化が起こり、防着筒の上面部7aと
マイクロ波導入窓2との間隙が変化し、これによりプラ
ズマの生成状態が変化し、プラズマ処理の再現性を悪化
させるという問題があった。However, in the microwave plasma device having the above-mentioned structure, when microwaves are introduced to generate plasma for a long time, the deposition-preventing cylinder 7 is heated by the plasma and a dimensional change occurs due to thermal expansion. There is a problem that the gap between 7a and the microwave introduction window 2 changes, which changes the state of plasma generation and deteriorates the reproducibility of plasma processing.
【0010】これに対し、本出願人は図11に示すよう
に防着筒の上面部7aとプラズマ生成室3の上部壁との
間に間隙保持部材21を設けることにより、防着筒の上
面部7aとマイクロ波導入窓2との間隙を所定の値に保
持する装置を提案している(特開平6−252100号
公報参照)。On the other hand, the present applicant provides a gap holding member 21 between the upper surface portion 7a of the deposition-inhibitory cylinder and the upper wall of the plasma generation chamber 3 as shown in FIG. There has been proposed a device for maintaining the gap between the portion 7a and the microwave introduction window 2 at a predetermined value (see Japanese Patent Laid-Open No. 6-252100).
【0011】[0011]
【発明が解決しようとする課題】しかしながら、上記の
防着筒の上面部7aとプラズマ生成室3の上部壁との間
隙に間隙保持部材21を備える特開平6−252100
号公報記載の装置においては、防着筒7の保持を防着筒
の筒部7bの下端を防着筒保持リング8a上に載置し、
防着筒保持リング8aをボルト8cによってプラズマ生
成室壁4の下部壁に固定することにより行っていたた
め、プラズマの生成を長時間行うと、プラズマ加熱によ
り防着筒7が熱膨張して変形し甚だしい場合には割れた
り、また、防着筒7の熱膨張に伴い、防着筒保持リング
8aが変形し、防着筒7の交換の際、取り外しが困難に
なるという問題があった。However, a gap holding member 21 is provided in the gap between the upper surface portion 7a of the deposition-inhibiting cylinder and the upper wall of the plasma generation chamber 3 described in JP-A-6-252100.
In the apparatus described in the publication, the attachment-preventing cylinder 7 is held by placing the lower end of the tubular portion 7b of the attachment-preventing cylinder on the attachment-preventing cylinder holding ring 8a.
Since the deposition-prevention cylinder holding ring 8a is fixed to the lower wall of the plasma generation chamber wall 4 with the bolt 8c, when the plasma is generated for a long time, the deposition-prevention cylinder 7 is thermally expanded and deformed by plasma heating. In the extreme case, there is a problem that it is cracked or the thermal barrier expansion of the deposition-inhibiting barrel 7 deforms the deposition-inhibiting barrel holding ring 8a, making it difficult to remove the deposition-proof barrel 7 when it is replaced.
【0012】本発明は、プラズマ処理の再現性を良好と
するとともに防着筒の熱膨張による変形や割れ破損ある
いは防着筒の取り外しに困難のないマイクロ波プラズマ
装置を提供することを目的としている。It is an object of the present invention to provide a microwave plasma device which improves the reproducibility of plasma processing and does not cause deformation or crack damage due to thermal expansion of the deposition-inhibiting cylinder or removal of the deposition-inhibiting cylinder. .
【0013】[0013]
【課題を解決するための手段】本発明は、プラズマ生成
室と、前記プラズマ生成室にマイクロ波を導入するマイ
クロ波導入窓と、前記プラズマ生成室の内部にプラズマ
生成室の内壁を覆う防着筒を備えるマイクロ波プラズマ
装置であって、上記防着筒がその下端で弾性のある防着
筒保持手段により保持されており、上記防着筒とマイク
ロ波導入窓との間隙が一定であることを特徴とし、ま
た、上記防着筒の下端と試料台との間に上記防着筒の熱
膨張量以上の空間があり、上記防着筒がその上端近傍で
プラズマ生成室に防着筒保持手段により保持されている
ことを特徴とする。According to the present invention, there is provided a plasma generation chamber, a microwave introduction window for introducing a microwave into the plasma generation chamber, and an inside wall of the plasma generation chamber for covering an inner wall of the plasma generation chamber. A microwave plasma device including a cylinder, wherein the deposition-proof cylinder is held at its lower end by an elastic deposition-proof cylinder holding means, and the gap between the deposition-proof cylinder and the microwave introduction window is constant. In addition, there is a space larger than the thermal expansion amount of the deposition-inhibiting cylinder between the lower end of the deposition-inhibiting cylinder and the sample table, and the deposition-inhibiting cylinder is held in the plasma generation chamber near the upper end thereof. It is held by means.
【0014】[0014]
【作用】本発明装置は、防着筒がその下端で弾性のある
防着筒保持手段により保持されるので、防着筒の上端を
固定したまま、プラズマ生成時の防着筒の熱膨張を弾性
部分の伸縮により吸収することができる。これにより、
防着筒とマイクロ波導入窓との間隙を一定の値に保持す
ることができ、プラズマ生成の再現性を良好とするとと
もに、防着筒の変形や割れ破損あるいは防着筒保持リン
グの変形に起因して防着筒の取り外しが困難になること
を防止することができる。In the device of the present invention, since the deposition-preventing cylinder is held at its lower end by the elastic deposition-protection-cylinder holding means, the thermal expansion of the deposition-prevention cylinder during plasma generation while the upper end of the deposition-prevention cylinder is fixed. It can be absorbed by expansion and contraction of the elastic part. This allows
The gap between the deposition shield and the microwave introduction window can be maintained at a constant value, which improves the reproducibility of plasma generation and also prevents deformation of the deposition shield or damage to the breakage or deformation of the deposition shield holding ring. It is possible to prevent the attachment-preventing cylinder from being difficult to remove due to the above.
【0015】また、防着筒がその上端近傍でプラズマ生
成室に防着筒保持手段により保持されているので、防着
筒の熱膨張による伸びは防着筒の下端に現れ、防着筒と
マイクロ波導入窓との間隙に対する伸びの影響はほとん
どない。また、防着筒の下端は固定されておらずまた防
着筒の下端と試料台との間には防着筒の熱膨張量以上の
十分な空間があるので、防着筒の下端が熱膨張によって
伸びたとしても、防着筒の変形や割れ破損のおそれもな
い。また、防着筒保持リングを使用していないので、こ
れの変形に起因して防着筒の取り外しが困難になること
もない。Further, since the deposition-proof cylinder is held in the plasma generating chamber near the upper end thereof by the deposition-proof cylinder holding means, the expansion due to the thermal expansion of the deposition-proof cylinder appears at the lower end of the deposition-proof cylinder and becomes There is almost no influence of elongation on the gap with the microwave introduction window. Also, since the lower end of the deposition-inhibiting cylinder is not fixed and there is a sufficient space between the lower end of the deposition-inhibiting cylinder and the sample table, which is more than the amount of thermal expansion of the deposition-inhibiting cylinder, the lower end of the deposition-inhibiting cylinder is not heated. Even if it expands due to expansion, there is no risk of deformation or breakage of the deposition-prevention cylinder. Further, since the deposition-prevention tube holding ring is not used, it is not difficult to remove the deposition-prevention tube due to the deformation of the ring.
【0016】[0016]
【実施例】以下、本発明のマイクロ波プラズマ装置の実
施例を図面に基づいて説明する。Embodiments of the microwave plasma apparatus of the present invention will be described below with reference to the drawings.
【0017】図1は第1の実施例のマイクロ波プラズマ
装置のプラズマ生成室3部分の模式的断面図である。防
着筒7は、アルミニウム製の筒部7bとアルミナ製の上
面部7aとから構成され、筒部7bの上端部は外周が突
出する段差を有するように形成され、上面部7aをこの
段差上に保持する構成になっている。防着筒7は、筒部
7bの上端がプラズマ生成室3の上部壁に接するよう
に、筒部7bの下端を防着筒保持手段8によって、プラ
ズマ生成室壁4の下部壁に固定されている。FIG. 1 is a schematic sectional view of a portion of a plasma generation chamber 3 of the microwave plasma apparatus of the first embodiment. The deposition-inhibiting cylinder 7 is composed of a cylindrical portion 7b made of aluminum and an upper surface portion 7a made of alumina. The upper end portion of the cylindrical portion 7b is formed to have a step with an outer periphery protruding. It is configured to hold. The deposition-prevention tube 7 is fixed to the lower wall of the plasma generation chamber wall 4 by the deposition-prevention tube holding means 8 so that the upper end of the tubular portion 7b contacts the upper wall of the plasma generation chamber 3. There is.
【0018】防着筒保持手段8及び防着筒の保持の方法
について詳述する。図2は図1の中の防着筒保持部分A
の拡大図であり、図4はB−B’断面を矢印の方向から
見た模式的断面図であり、図3はボルト8cによりプラ
ズマ生成室壁4の下部壁に取り付けられる前の防着筒保
持手段8の模式図である。The attachment-preventing cylinder holding means 8 and the method for holding the attachment-preventing cylinder will be described in detail. FIG. 2 shows the attachment prevention cylinder holding portion A in FIG.
4 is an enlarged view of FIG. 4, and FIG. 4 is a schematic cross-sectional view of the BB ′ cross section as seen from the direction of the arrow, and FIG. 3 is a protection cylinder before being attached to the lower wall of the plasma generation chamber wall 4 by the bolt 8c. It is a schematic diagram of holding means 8.
【0019】図3に示すように、ボルト孔8eを有する
板バネ8dが4ケ所配置されたアルミニウム製の防着筒
保持リング8aで、防着筒保持手段8は主に構成されて
いる。この板バネ8dはそれぞれボルト8fにより両端
を防着筒保持リング8aに固定されている。孔8bは、
ボルト8cにより防着筒保持リング8aをプラズマ生成
室壁4の下部壁に取り付ける際、防着筒保持リング8a
の下側からボルト8cを取り付けるためのものである。As shown in FIG. 3, the attachment-prevention cylinder holding means 8 is mainly constituted by an aluminum attachment-prevention cylinder holding ring 8a in which four leaf springs 8d having bolt holes 8e are arranged. Both ends of the leaf spring 8d are fixed to the deposition-inhibiting cylinder holding ring 8a by bolts 8f. The hole 8b is
When attaching the deposition-inhibitory cylinder holding ring 8a to the lower wall of the plasma generation chamber wall 4 with the bolt 8c, the deposition-proof cylindrical holding ring 8a
It is for attaching the bolt 8c from below.
【0020】図2に示すように、防着筒の筒部7bが防
着筒保持リング8aの内周部に載置されており、また、
防着筒保持リング8aは、ボルト8cによって板バネ8
dに開けられたボルト孔8eを介してプラズマ生成室壁
4の下部壁に固定されている。この固定は、防着筒の筒
部7bの上端がプラズマ生成室3の上部壁に接するよう
に行われる。As shown in FIG. 2, the cylinder portion 7b of the deposition-inhibiting cylinder is placed on the inner peripheral portion of the deposition-inhibiting cylinder holding ring 8a, and
The attachment-prevention cylinder holding ring 8a is attached to the leaf spring 8 by a bolt 8c.
It is fixed to the lower wall of the plasma generation chamber wall 4 through a bolt hole 8e opened in d. This fixing is performed so that the upper end of the tubular portion 7b of the deposition-inhibiting cylinder contacts the upper wall of the plasma generation chamber 3.
【0021】図4に示すように、防着筒が載置されてい
る防着筒保持リング8aは、プラズマ生成室壁4の下部
壁に固定されたボルト8cによって、板バネ8dを介し
て吊り上げるように保持された状態となっている。した
がって、防着筒の筒部7bが膨張し伸長した場合、防着
筒保持リング8aに下方向に力が加わるが、板バネ8d
のたわみにより吸収することができる。As shown in FIG. 4, the deposition-prevention tube holding ring 8a on which the deposition-prevention tube is placed is lifted up by a bolt 8c fixed to the lower wall of the plasma generation chamber wall 4 via a leaf spring 8d. It is in the state of being held. Therefore, when the tubular portion 7b of the deposition-inhibitory barrel expands and extends, a force is applied downward to the deposition-inhibitory barrel holding ring 8a, but the leaf spring 8d
Can be absorbed by the deflection of the.
【0022】すなわち、以上の構成により、プラズマを
長時間生成した場合でも、防着筒7は筒部7bの上端が
プラズマ生成室3の上部壁に接するように防着筒保持手
段8によって保持されているので、防着筒の上面部7a
とマイクロ波導入窓2との間隙は、この筒部7bの突出
長さによって規定された長さで一定に保持され、変化し
ない。また、防着筒の筒部7bのプラズマ加熱による膨
張により筒部7bの下端が下方向に伸びた場合、板バネ
8dのたわみによって防着筒保持リング8aが下方向に
移動するので、防着筒及び防着筒保持リングには大きな
力は加わらず、この結果防着筒の変形及び防着筒保持リ
ングの変形が防止されることになる。That is, with the above-mentioned structure, even when plasma is generated for a long time, the deposition-inhibiting cylinder 7 is held by the deposition-inhibiting cylinder holding means 8 so that the upper end of the tubular portion 7b contacts the upper wall of the plasma generating chamber 3. Therefore, the upper surface portion 7a of the protection cylinder is
The gap between the microwave introduction window 2 and the microwave introduction window 2 is kept constant at a length defined by the protruding length of the cylindrical portion 7b and does not change. Further, when the lower end of the tubular portion 7b extends downward due to the expansion of the tubular portion 7b of the deposition-inhibitory barrel due to plasma heating, the deflection of the leaf spring 8d causes the deposition-proof tubular holding ring 8a to move in the downward direction. No large force is applied to the cylinder and the attachment-prevention tube holding ring, and as a result, the deformation of the attachment-prevention tube and the deformation of the attachment-prevention tube holding ring are prevented.
【0023】本実施例の装置により、プラズマ処理の再
現性及び防着筒の変形及び防着筒保持リングの変形がな
いことが、Arガスプラズマによる長時間のプラズマ生
成によって確認できた。It was confirmed by the apparatus of this embodiment that the reproducibility of the plasma treatment and the deformation of the deposition-prevention tube and the deformation of the deposition-prevention tube holding ring were not generated by long-time plasma generation by Ar gas plasma.
【0024】また、弾性的に押し上げる力を供給するも
のとして、板バネの代わりに、コイル状のバネを用いて
も良い。図5はこの一例であり、防着筒保持リング8a
と支持板8hとの間にはコイル状のバネ8gがそのバネ
の両端部が固定されて設けられており、支持板8hに開
けられたボルト孔8iを介してボルト8cによって、プ
ラズマ生成室壁4の下部壁に固定される。この場合、防
着筒保持リング8aは、支持板8h、コイル状のバネ8
gを介して、吊り上げるように保持された状態となる。
先の実施例と同様、防着筒の筒部が膨張し伸長した場
合、防着筒保持リング8aに下方向に力が加わるが、コ
イル状のバネ8gの伸長により吸収することができる。A coil-shaped spring may be used instead of the leaf spring to supply the elastically pushing force. FIG. 5 shows an example of this, and the attachment-preventing cylinder holding ring 8a
A coil-shaped spring 8g is provided between the support plate 8h and the support plate 8h such that both ends of the spring are fixed. The plasma generation chamber wall is formed by a bolt 8c through a bolt hole 8i formed in the support plate 8h. 4 is fixed to the lower wall. In this case, the attachment prevention cylinder holding ring 8a includes the support plate 8h and the coiled spring 8
It is held so as to be lifted up via g.
As in the previous embodiment, when the tubular portion of the deposition-inhibitory barrel expands and expands, a downward force is applied to the deposition-proof barrel holding ring 8a, but this can be absorbed by the extension of the coiled spring 8g.
【0025】図6は第2の実施例のマイクロ波プラズマ
装置のプラズマ生成室3部分の模式的断面図である。防
着筒7は、石英製の筒部7bと石英製の上面部7aとか
ら構成され、筒部7bの上端部は外周が突出する段差を
有するように形成され、上面部7aをこの段差上に保持
する構成になっている。本実施例では、防着筒の筒部7
bの下端で保持する代わりに、上端の近傍でプラズマ生
成室壁4に固定し防着筒7を吊り下げて保持する構成と
した。吊り下げるために、プラズマ生成室壁4に内側に
向かって保持用の張り出し部分4cを4ケ所設けるとと
もに、それに対応して図7にも示すように防着筒の筒部
7bの上端部分にも外側に向かって保持用の張り出し部
分7cを4ケ所設けた。取り付け方としては、図8に示
すように、防着筒7を下側から押し上げて、プラズマ生
成室3内に挿入し、これを回転させて、防着筒の張り出
し部分7cがプラズマ生成室壁4の張り出し部分4cに
載せて取り付ける。本実施例では、防着筒7の下端から
試料台14までは防着筒7の筒部7bの熱膨張を妨げる
ものは何もない。FIG. 6 is a schematic sectional view of the plasma generating chamber 3 portion of the microwave plasma apparatus of the second embodiment. The deposition-inhibiting cylinder 7 is composed of a quartz cylindrical portion 7b and a quartz upper surface portion 7a, and the upper end portion of the cylindrical portion 7b is formed to have a step with an outer periphery protruding. It is configured to hold. In the present embodiment, the tubular portion 7 of the deposition-inhibitory cylinder
Instead of holding it at the lower end of b, it is fixed to the plasma generating chamber wall 4 near the upper end and the deposition-inhibiting cylinder 7 is suspended and held. In order to suspend the plasma generation chamber wall 4, four retaining projections 4c are provided toward the inside, and correspondingly, as shown in FIG. 7, also on the upper end portion of the cylindrical portion 7b of the deposition-inhibitory cylinder. Four protruding portions 7c for holding were provided toward the outside. As shown in FIG. 8, the attachment method is to push up the deposition-inhibiting cylinder 7 from the lower side, insert it into the plasma generation chamber 3, and rotate it so that the overhanging portion 7c of the deposition-inhibiting cylinder is the plasma generation chamber wall. Mount it on the protruding portion 4c of No. 4 and attach it. In this embodiment, there is nothing from the lower end of the deposition-inhibiting cylinder 7 to the sample table 14 that prevents thermal expansion of the tubular portion 7b of the deposition-inhibiting cylinder 7.
【0026】以上の構成により、プラズマを長時間生成
した場合でも、防着筒7のプラズマ生成室との固定点が
筒部7bの上端近傍にあるので、プラズマ加熱による防
着筒の筒部7bの伸びは、主に防着筒の筒部7bの下端
の伸びとして現れるので、防着筒の上面部7aとマイク
ロ波導入窓2との間隙に対する防着筒の筒部7bの伸び
の影響はほとんどない。また、防着筒7が吊り下げられ
た構造であり、防着筒7の下端から試料台14までは何
もないので、防着筒の筒部7bの下端が熱膨張によって
伸長したとしても、防着筒7の変形や割れ破損のおそれ
がない。With the above structure, even when plasma is generated for a long time, the fixing point of the deposition-inhibiting cylinder 7 with the plasma generation chamber is near the upper end of the cylindrical portion 7b, so the cylindrical portion 7b of the deposition-inhibiting cylinder by plasma heating. Of the deposition-preventing cylinder mainly appears as the extension of the lower end of the tubular portion 7b of the deposition-preventing cylinder. rare. Further, since the deposition-preventing cylinder 7 is suspended and there is nothing from the lower end of the deposition-preventing cylinder 7 to the sample stand 14, even if the lower end of the tubular portion 7b of the deposition-preventing cylinder expands due to thermal expansion, There is no risk of deformation or breakage of the deposition-inhibiting cylinder 7.
【0027】本実施例の装置においても、プラズマ処理
の再現性及び防着筒の変形や割れ破損がないことが、A
rガスプラズマによる長時間のプラズマ生成によって確
認できた。Also in the apparatus of this embodiment, the reproducibility of the plasma treatment and the deformation and crack damage of the deposition-prevention cylinder are
It could be confirmed by long-time plasma generation by r gas plasma.
【0028】[0028]
【発明の効果】以上詳述したように本発明のマイクロ波
プラズマ装置においては、プラズマ処理の再現性を良好
とするとともに防着筒の熱膨張による変形や割れ破損あ
るいは防着筒の取り外しが困難になることをなくすこと
ができる。As described above in detail, in the microwave plasma device of the present invention, the reproducibility of plasma processing is improved, and the deformation and crack damage due to the thermal expansion of the deposition-inhibiting cylinder or the removal of the deposition-inhibiting cylinder is difficult. Can be eliminated.
【図1】第1の実施例のマイクロ波プラズマ装置のプラ
ズマ生成室部分を示した模式的断面図である。FIG. 1 is a schematic cross-sectional view showing a plasma generation chamber portion of a microwave plasma device according to a first embodiment.
【図2】第1の実施例の図1の中の防着筒保持部分Aの
拡大図である。FIG. 2 is an enlarged view of an attachment-prevention cylinder holding portion A in FIG. 1 of the first embodiment.
【図3】第1の実施例の防着筒保持手段8を示した模式
図である。FIG. 3 is a schematic diagram showing an attachment-preventing cylinder holding means 8 of the first embodiment.
【図4】第1の実施例の図2におけるB−B’断面を矢
印方向から見た防着筒保持部分の模式的断面図である。FIG. 4 is a schematic cross-sectional view of an attachment-preventing cylinder holding portion when the BB ′ cross-section in FIG. 2 of the first embodiment is viewed from the arrow direction.
【図5】第1の実施例のコイル状のバネを用いた場合の
防着筒保持部分の模式的断面図である。FIG. 5 is a schematic cross-sectional view of an attachment-preventing cylinder holding portion when the coiled spring of the first embodiment is used.
【図6】第2の実施例のマイクロ波プラズマ装置のプラ
ズマ生成室部分を示した模式的断面図である。FIG. 6 is a schematic cross-sectional view showing a plasma generation chamber portion of the microwave plasma device according to the second embodiment.
【図7】第2の実施例の防着筒の模式図である。FIG. 7 is a schematic view of an attachment-prevention cylinder according to a second embodiment.
【図8】第2の実施例の防着筒の取り付け方を説明する
模式図である。FIG. 8 is a schematic diagram illustrating how to attach the deposition-inhibitory cylinder of the second embodiment.
【図9】従来のマイクロ波プラズマ装置の模式的断面図
である。FIG. 9 is a schematic cross-sectional view of a conventional microwave plasma device.
【図10】従来のマイクロ波プラズマ装置のプラズマ生
成室部分を示した模式的断面図である。FIG. 10 is a schematic cross-sectional view showing a plasma generation chamber portion of a conventional microwave plasma device.
【図11】別の従来のマイクロ波プラズマ装置のプラズ
マ生成室部分を示した模式的断面図である。FIG. 11 is a schematic cross-sectional view showing a plasma generation chamber portion of another conventional microwave plasma device.
2 マイクロ波導入窓 7 防着筒 7a 防着筒の上面部 7b 防着筒の筒部 8 防着筒保持手段 8a 防着筒保持リング 8b 孔 8c ボルト 8d 板バネ 8e ボルト孔 8f ボルト 8g コイル状のバネ 8h 支持板 8i ボルト孔 2 microwave introduction window 7 anti-stick cylinder 7a upper surface part of anti-stick cylinder 7b tubular part of anti-stick cylinder 8 anti-stick cylinder holding means 8a anti-stick cylinder holding ring 8b hole 8c bolt 8d leaf spring 8e bolt hole 8f bolt 8g coiled Spring 8h Support plate 8i Bolt hole
Claims (2)
マイクロ波を導入するマイクロ波導入窓と、前記プラズ
マ生成室の内部にプラズマ生成室の内壁を覆う防着筒を
備えるマイクロ波プラズマ装置であって、上記防着筒が
その下端で弾性のある防着筒保持手段により保持されて
おり、上記防着筒とマイクロ波導入窓との間隙が一定で
あることを特徴とするマイクロ波プラズマ装置。1. A microwave plasma apparatus comprising: a plasma generation chamber; a microwave introduction window for introducing microwaves into the plasma generation chamber; and a deposition-inhibiting cylinder that covers the inner wall of the plasma generation chamber inside the plasma generation chamber. A microwave plasma apparatus, characterized in that the protection tube is held at its lower end by a protection tube holding means having elasticity, and the gap between the protection tube and the microwave introduction window is constant. .
マイクロ波を導入するマイクロ波導入窓と、前記プラズ
マ生成室の内部にプラズマ生成室の内壁を覆う防着筒を
備えるマイクロ波プラズマ装置であって、上記防着筒の
下端と試料台との間に上記防着筒の熱膨張量以上の空間
があり、上記防着筒がその上端近傍でプラズマ生成室に
防着筒保持手段により保持されていることを特徴とする
マイクロ波プラズマ装置。2. A microwave plasma device comprising a plasma generation chamber, a microwave introduction window for introducing microwaves into the plasma generation chamber, and a deposition-inhibiting cylinder for covering the inner wall of the plasma generation chamber inside the plasma generation chamber. There is a space larger than the thermal expansion amount of the deposition-inhibiting cylinder between the lower end of the deposition-inhibiting cylinder and the sample table, and the deposition-inhibiting cylinder is held in the plasma generation chamber near the upper end thereof by the deposition-inhibiting cylinder holding means. A microwave plasma device characterized by being provided.
Priority Applications (1)
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JP32703194A JP3516097B2 (en) | 1994-12-28 | 1994-12-28 | Microwave plasma device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP32703194A JP3516097B2 (en) | 1994-12-28 | 1994-12-28 | Microwave plasma device |
Publications (2)
Publication Number | Publication Date |
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JPH08185997A true JPH08185997A (en) | 1996-07-16 |
JP3516097B2 JP3516097B2 (en) | 2004-04-05 |
Family
ID=18194542
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JP32703194A Expired - Fee Related JP3516097B2 (en) | 1994-12-28 | 1994-12-28 | Microwave plasma device |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005062362A1 (en) * | 2003-12-24 | 2005-07-07 | Mitsubishi Heavy Industries, Ltd. | Plasma processing apparatus |
JP2008277306A (en) * | 1997-01-29 | 2008-11-13 | Foundation For Advancement Of International Science | Plasma device |
US10980666B2 (en) | 2009-12-18 | 2021-04-20 | Scion Neurostim, Llc | Devices and methods for vestibular and/or cranial nerve stimulation |
-
1994
- 1994-12-28 JP JP32703194A patent/JP3516097B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008277306A (en) * | 1997-01-29 | 2008-11-13 | Foundation For Advancement Of International Science | Plasma device |
JP2009117373A (en) * | 1997-01-29 | 2009-05-28 | Foundation For Advancement Of International Science | Plasma device |
JP4356117B2 (en) * | 1997-01-29 | 2009-11-04 | 財団法人国際科学振興財団 | Plasma device |
WO2005062362A1 (en) * | 2003-12-24 | 2005-07-07 | Mitsubishi Heavy Industries, Ltd. | Plasma processing apparatus |
KR100774781B1 (en) * | 2003-12-24 | 2007-11-07 | 미츠비시 쥬고교 가부시키가이샤 | Plasma processing apparatus |
US10980666B2 (en) | 2009-12-18 | 2021-04-20 | Scion Neurostim, Llc | Devices and methods for vestibular and/or cranial nerve stimulation |
Also Published As
Publication number | Publication date |
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JP3516097B2 (en) | 2004-04-05 |
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