JPH08178742A - Thermoelectric radiation detector - Google Patents
Thermoelectric radiation detectorInfo
- Publication number
- JPH08178742A JPH08178742A JP6335405A JP33540594A JPH08178742A JP H08178742 A JPH08178742 A JP H08178742A JP 6335405 A JP6335405 A JP 6335405A JP 33540594 A JP33540594 A JP 33540594A JP H08178742 A JPH08178742 A JP H08178742A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thermoelectric
- radiation detector
- opening
- detector according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 241001640034 Heteropterys Species 0.000 description 1
- 241000207439 Myra Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は熱電放射線検出器、よ
り具体的には、赤外線およびレーザ装置の放射線レベル
の検出、測定及び制御のために使用することができる測
定装置に関する。FIELD OF THE INVENTION This invention relates to thermoelectric radiation detectors, and more particularly to measuring devices that can be used for detecting, measuring and controlling the radiation levels of infrared and laser devices.
【０００２】[0002]
【従来の技術】従来周知の熱電放射線検出器は、（ａ）
２種類の異なる材料製の素子で製造された熱電池と、
（ｂ）前記素子を電気回路に接続する熱接点と冷接点
と、（ｃ）放射線の流れを伝送する開口を備えた基板
と、（ｄ）基板の開口をカバーする支持フイルムと、
（ｅ）開口付本体と、（ｆ）本体の開口をカバーする光
フィルタとから成っている。この種の熱電放射線検出器
はアメリカ特許第４１１１７１７号、同第４６６５２７
６号、旧東ドイツ特許第２７５３３号に記載されてい
る。2. Description of the Related Art A known thermoelectric radiation detector is (a)
A thermal battery made of elements made of two different materials,
(B) a hot contact and a cold contact for connecting the device to an electric circuit, (c) a substrate having an opening for transmitting a flow of radiation, and (d) a support film for covering the opening of the substrate,
(E) A main body with an opening and (f) an optical filter that covers the opening of the main body. Thermoelectric radiation detectors of this type are disclosed in U.S. Pat. Nos. 4,111,717 and 466,527.
No. 6, formerly East German Patent No. 27533.
【０００３】この発明は前記アメリカ特許第４６６５２
７６号に記載の検出器に類似する構成のもので、このア
メリカ特許の検出器は基板がシリコン製であり、本体に
は通常の大気圧の不活性ガスが満たしてある。この周知
の熱電池検出器はボルト毎ワットの感度が１３４Ｖ／Ｗ
以下である。この感度では赤外線装置用の周知の検出器
には十分に利用することができない。周知の検出器がこ
のように利用できないという原因は、シリコン製の基板
を通しての熱の効率が低く、熱が通常大気圧と等しい保
護用ガスを経て漏洩することにある。基板の材料として
シリコンを用いると周知の熱電放射線検出器の製造に支
障を招く。このような検出器を光学系の装置に使用する
場合には、基板に円形の開口を設ける必要がある。この
開口をあけるのに、従来周知の化学的エチング法を適用
すると、シリコンの化学的エチング法の異方性がシリコ
ン板に円錐状および円筒形の開口を設けるのに非常な困
難を呼ぶのである。さらに、周知の検出器の欠点は検出
器本体の温度の変動に対する検出器の信号のゼロ点ドリ
フト、及び一定の放射流の測定中にフィルタの加熱によ
って生じる信号レベルのドリフトである。This invention is described in the above-mentioned US Pat. No. 46652.
Similar in construction to the detector described in U.S. Pat. No. 76, the detector of this U.S. patent has a silicon substrate and a body filled with a normal atmospheric inert gas. This well known thermal battery detector has a sensitivity of 134V / W at volt per watt.
It is the following. This sensitivity does not lend itself well to known detectors for infrared devices. The reason why known detectors are not available in this way is that the heat through the silicon substrate is inefficient and the heat leaks through a protective gas, which is usually equal to atmospheric pressure. The use of silicon as the substrate material hinders the manufacture of known thermoelectric radiation detectors. When such a detector is used in an optical device, it is necessary to provide a circular opening in the substrate. When the well-known chemical etching method is applied to open this opening, the anisotropy of the chemical etching method of silicon causes great difficulty in providing the conical and cylindrical openings in the silicon plate. . Furthermore, the disadvantages of the known detectors are the zero-point drift of the detector signal with respect to variations in the temperature of the detector body and the signal level drift caused by heating of the filter during the measurement of a constant radiation flow.
【０００４】[0004]
【発明の目的】この発明の主目的は、感度が高く、ゼロ
点ドリフトが低く、信頼性に優れ、製造するのに最適の
熱電放射線検出器を提供することにある。SUMMARY OF THE INVENTION The main object of the present invention is to provide a thermoelectric radiation detector which is highly sensitive, has a low zero point drift, is highly reliable, and is most suitable for manufacturing.
【０００５】[0005]
【課題を解決するための手段】この発明の上記目的を達
成するために、この発明の熱電放射線検出器は、（ａ）
２種類の異なる材料製の熱電素子で製した熱電池と、
（ｂ）前記熱電素子を接続する熱接点および冷接点と、
（ｃ）放射線の流れを伝送する開口を有する基板と、
（ｄ）前記基板の開口をカバーし前記熱電池の接点が配
置された支持フィルムと、（ｅ）開口を有する本体と、
（ｆ）前記本体の開口をカバーする光フィルタと、
（ｇ）リード線とから成り、前記基板を熱伝導率が１．
８Ｗ／ｃｍ・Ｋ以上の金属、たとえばアルミニウム、ア
ルミニウム系合金、および銅製とするものである。In order to achieve the above object of the present invention, a thermoelectric radiation detector of the present invention comprises (a)
A thermal battery made of thermoelectric elements made of two different materials,
(B) a hot contact and a cold contact connecting the thermoelectric elements,
(C) a substrate having an opening for transmitting the flow of radiation,
(D) a support film that covers the opening of the substrate and on which the contacts of the thermal battery are arranged; and (e) a main body having the opening,
(F) an optical filter that covers the opening of the main body,
(G) The substrate has a thermal conductivity of 1.
It is made of a metal having a power of 8 W / cm · K or more, such as aluminum, an aluminum-based alloy, and copper.
【０００６】この発明の実施態様において、基板の開口
の形状を截頭円錐状で、その円錐の母線が基板の表面と
なす角度を約９０度乃至４５度としてある。この発明の
実施態様において、基板に設けた截頭円錐状の開口の表
面の反射率を検出器の波長作動範囲において０．８以上
にしてある。In an embodiment of the present invention, the shape of the opening of the substrate is frusto-conical, and the angle between the generatrix of the cone and the surface of the substrate is about 90 to 45 degrees. In the embodiment of the present invention, the reflectance of the surface of the frustoconical opening provided on the substrate is 0.8 or more in the wavelength operating range of the detector.
【０００７】直流電流測定時の信号ドリフトを基板、本
体、フィルタ間の温度差を取り除くことで削減するため
に、基板と本体と光フィルタとを放射線の流れを伝送す
る開口を備えた熱伝導性の要素で接続してある。その熱
伝導性の要素の開口を截頭円錐状とし、その円錐の母線
を基板の表面について約９０度乃至４５度の角度にして
ある。In order to reduce the signal drift at the time of measuring the direct current by removing the temperature difference between the substrate, the main body and the filter, the thermal conductivity of the substrate, the main body and the optical filter is provided with an opening for transmitting the flow of radiation. It is connected with the element of. The opening of the thermally conductive element is frusto-conical and the generatrix of the cone is at an angle of about 90 to 45 degrees with respect to the surface of the substrate.
【０００８】この発明の一実施態様においては、熱伝導
性要素の開口を截頭円錐状の鏡面とし、その鏡面の反射
率を検出器の波長作動範囲において０．８以上にしてあ
る。In one embodiment of the present invention, the opening of the heat-conducting element is a frustoconical mirror surface, and the reflectance of the mirror surface is 0.8 or more in the wavelength operating range of the detector.
【０００９】支持フィルムのゼロ点ドリフトを減少させ
るために、極めて小型のフィルム状のサーミスタが支持
フィルムに取り付けてあり、熱電放射線検出器に開口付
の外部ハウジングが設けてあって、本体と外部ハウジン
グとの間に熱絶縁体が配してある。In order to reduce the zero-point drift of the supporting film, an extremely small film thermistor is attached to the supporting film, and the thermoelectric radiation detector is provided with an external housing with an opening, and the main body and the external housing are provided. There is a heat insulator between the and.
【００１０】この発明の他の実施態様の熱電放射線検出
器においては、熱電池の熱接点からの熱損失を軽減し
て、その感度を高めるために、熱電池と本体との間に凹
面鏡の形状の放射線反射器を配置し、２個の熱電池が同
一の熱起電力の方向に直列に接続してあり、その一方の
熱電池を主熱電池とし、他方を副熱電池とし、さらに放
射線の流れを伝送する開口を備えた別の基板と、副熱電
池の接点を配置した別の支持フィルムとが設けてある。
この別の基板は主熱電池の基板、本体および光フィルタ
とそれぞれ前記熱伝導要素で接続してあって、検出器の
本体には大気圧より低いが１０-3ｍｍＨｇよりも高圧の
不活性ガスが充満してある。In another embodiment of the thermoelectric radiation detector of the present invention, in order to reduce the heat loss from the thermal contacts of the thermal battery and increase its sensitivity, a concave mirror shape is provided between the thermal battery and the main body. The two radiation cells are connected in series in the same direction of the thermoelectromotive force, one of the thermal cells is the main thermal cell, and the other is the secondary thermal cell. There is another substrate provided with an opening for transmitting the flow and another support film on which the contact of the secondary thermal battery is arranged.
This other substrate is connected to the substrate of the main thermal battery, the main body and the optical filter respectively by the heat conducting element, and the main body of the detector has an inert gas pressure lower than atmospheric pressure but higher than 10 -3 mmHg. Is full.
【００１１】この発明の一実施態様によれば、熱電池の
内部抵抗を減じて、限界感度を高めるために、熱電池の
素子の表面の一部に金属被覆が施してある。According to one embodiment of the present invention, a part of the surface of the element of the thermal battery is coated with a metal in order to reduce the internal resistance of the thermal battery and increase the limit sensitivity.
【００１２】[0012]
【実施例】この発明の熱電放射線検出器は、図１に示す
ように、開口４を備えた本体１と、開口４をカバーする
光フィルタ３と、２種の異なる半導体材料製の熱電素子
１２、１６を具備する熱電池と、検出器のリード線１１
とから成っている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 1, a thermoelectric radiation detector of the present invention comprises a main body 1 having an opening 4, an optical filter 3 covering the opening 4, and a thermoelectric element 12 made of two different semiconductor materials. , 16 and a lead wire 11 of the detector
And consists of.
【００１３】検出器の本体１は密閉体であって、大気圧
より低いが１０-3ｍｍＨｇより高い圧力の不活性ガスが
満たしてある。The main body 1 of the detector is a closed body and is filled with an inert gas having a pressure lower than atmospheric pressure but higher than 10 -3 mmHg.
【００１４】熱電池は熱接点１５と冷接点１３とを備
え、素子１２、１６に接続してある。素子１２、１６の
材料はｎ−形およびｐ−形半導体として周知の熱電材料
で、たとえばＢｉ2Ｔｅ3系の合金である。The thermal battery comprises a hot contact 15 and a cold contact 13, which are connected to the elements 12, 16. The materials of the elements 12 and 16 are thermoelectric materials known as n-type and p-type semiconductors, for example, Bi 2 Te 3 based alloys.
【００１５】熱電放射線検出器は放射線の流れを伝送す
るための開口６を備えた基板２から成っている。基板２
は熱伝導率が１．８Ｗ／ｃｍ・Ｋ 以上の金属、たとえ
ばアルミニウム、アルミニウム合金、あるいは銅製とし
てある。開口６は周知の方法として、たとえば化学的エ
チングによって形成する。The thermoelectric radiation detector comprises a substrate 2 provided with openings 6 for transmitting the radiation stream. Substrate 2
Is made of a metal having a thermal conductivity of 1.8 W / cm · K or more, such as aluminum, an aluminum alloy, or copper. The opening 6 is formed by a known method, for example, by chemical etching.
【００１６】この発明によれば、図１に示すように、基
板２の開口６を截頭円錐状にしてあり、円錐の母線が基
板の表面となす角度は約９０度乃至４５度である。図１
に示す実施態様においては、基板２の開口６の形状は截
頭円錐状の鏡面である。この角度範囲は必要に応じて変
更することができる。なお、この角度は放射線線集合器
の周知の理論にしたがって放射線検出器を設計するとき
に決めるもので、これについては、たとえば、ブイ．エ
イ．グリリヘス（Ｖ．Ａ．Ｇｒｉｌｉｈｅｓ）およびオ
ー．エフ．ザージェフ（Ｏ．Ｆ．Ｚａｊｔｓｅｖ）によ
ってヘリオテニカ（Ｈｅｌｉｏｔｅｈｎｉｋａ）、１９
８１年第５号第２２−３０頁に記載の論文プレイン、フ
ォクリンズ、ウイズ、マルチプル、リフレクシオン、ア
ズ、ソーラー、ラジエーシヨン、コンセントレターズ
（Ｐｌａｎｅ ｆｏｃｌｉｎｅｓｗｉｔｈ ｍｕｌｔｉ
ｐｌｅ ｒｅｆｌｅｃｔｉｏｎ ａｓ ｓｏｌａｒ ｒ
ａｄｉａｔｉｏｎ ｃｏｎｃｅｎｔｒａｔｏｒｓ）があ
る。According to the present invention, as shown in FIG. 1, the opening 6 of the substrate 2 is frustoconical, and the angle between the generatrix of the cone and the surface of the substrate is about 90 to 45 degrees. FIG.
In the embodiment shown in, the shape of the opening 6 of the substrate 2 is a frustoconical mirror surface. This angle range can be changed as required. Note that this angle is determined when designing the radiation detector according to the well-known theory of radiation ray collectors. A. VA Grilihes and Oh. F. Heliotehnika, 19 by OF Zajtsev.
1981, No. 5, pp. 22-30, Plain, Foclins, Withes, Multiple, Reflection, Az, Solar, Radiation, Consent Letters (Plane FOLINES WITH MULTI)
ple reflection as solar r
There are adiation concentrators).
【００１７】この発明によれば前記鏡面の表面は検出器
の作動波長範囲において０．８以上の反射率にしてあ
る。この鏡面は、たとえば、研磨または鏡面反射被覆法
によって製する。According to the present invention, the mirror surface has a reflectance of 0.8 or more in the operating wavelength range of the detector. This mirror surface is manufactured by polishing or a specular reflection coating method, for example.
【００１８】熱電池を支持し基板２の開口６をカバーす
るフィルム１０は基板２に取り付けてある。この支持フ
ィルム１０は熱伝導率の低い周知の材料、たとえばポリ
エチレンテレフタラートフィルム（商品名「マイラ」）
あるいはポリイミド製である。支持フィルム１０は、た
とえば遠心力によって金属に有機被覆を行うような周知
の方法を利用して基板２の表面に付着させる。支持フィ
ルム１０の表面に熱電池の素子１２、１６を配置する。
これら素子は薄膜技術において周知の方法、たとえば吹
き付け法によって支持フィルム１０に取り付ける。A film 10 supporting the thermal battery and covering the opening 6 of the substrate 2 is attached to the substrate 2. The support film 10 is a well-known material having a low thermal conductivity, for example, a polyethylene terephthalate film (trade name "Myra").
Alternatively, it is made of polyimide. The support film 10 is attached to the surface of the substrate 2 by using a well-known method such as organic coating of metal by centrifugal force. The elements 12 and 16 of the thermal battery are arranged on the surface of the support film 10.
These elements are attached to the support film 10 by methods well known in the thin film art, such as spraying.
【００１９】光フィルタ３に対面する支持フィルム１０
の表面は黒化した受光部７としてある。Supporting film 10 facing the optical filter 3
The surface of is the light-receiving portion 7 which is blackened.
【００２０】熱電池の熱接点１５は支持フィルム１０に
放射線が当たる領域に露出するように、基板２の開口の
下方に配置してある。The thermal contact 15 of the thermal battery is arranged below the opening of the substrate 2 so as to be exposed in a region where the support film 10 is exposed to radiation.
【００２１】熱電池の熱接点１５は支持フィルム１０に
放射線が当たらない領域、すなわち、基板２の本体の下
方に配置してある。The thermal contact 15 of the thermal battery is arranged in a region where the support film 10 is not exposed to radiation, that is, below the main body of the substrate 2.
【００２２】この発明の特別の実施態様においては、支
持フィルム１０の放射線の当たらない領域にある熱電池
の素子の一部に金属被覆１４を施してこの部分の電気抵
抗を低くしてある。In a particular embodiment of the invention, a portion of the thermal battery element in the radiation-free area of the support film 10 is provided with a metallization 14 to reduce the electrical resistance of this area.
【００２３】基板２、本体１及び光フィルタ３は放射線
の流れを伝達する開口５を構成する熱伝導要素９によっ
て接続してある。この熱伝導要素の材料には、熱伝導率
の高い金属、たとえば銅またはアルミニウムを使用す
る。熱伝導要素９は基板２、本体１及び光フィルタ３に
高熱伝導率の接着剤で取り付けてある。The substrate 2, the body 1 and the optical filter 3 are connected by a heat conducting element 9 forming an opening 5 for transmitting the flow of radiation. As a material of the heat conducting element, a metal having a high heat conductivity such as copper or aluminum is used. The heat conducting element 9 is attached to the substrate 2, the main body 1 and the optical filter 3 with an adhesive having a high heat conductivity.
【００２４】熱伝導要素９の開口５は截頭円錐状であっ
て、円錐の母線は基板２の表面について前述した角度を
形成している。図１に示す実施態様においては、熱伝導
要素９の開口５は截頭円錐状の鏡面８で、前記鏡面の反
射率は検出器の波長作動範囲において０．８よりも大き
い。The opening 5 of the heat-conducting element 9 is frusto-conical, the generatrix of the cone forming the angle mentioned above with respect to the surface of the substrate 2. In the embodiment shown in FIG. 1, the opening 5 of the heat-conducting element 9 is a frusto-conical mirror surface 8 whose reflectivity is greater than 0.8 in the wavelength operating range of the detector.
【００２５】図１に示す実施態様においては、支持フィ
ルム１０にフィルム熱抵抗１７が配置してある。支持フ
ィルム１０の露出しない部分は冷接点１３に近接してい
る。In the embodiment shown in FIG. 1, a film heat resistance 17 is arranged on the support film 10. The unexposed portion of the support film 10 is close to the cold junction 13.
【００２６】この発明の別の実施態様においては、図２
に示すように、フィルム熱抵抗１７として小さなサーミ
スタ１８を用いている。このサーミスタ１８は支持フィ
ルム１０の放射線の当たらない部分で冷接点１３に近接
して配置してある。In another embodiment of the invention, FIG.
As shown in FIG. 3, a small thermistor 18 is used as the film thermal resistance 17. The thermistor 18 is arranged in the portion of the support film 10 which is not exposed to the radiation and is arranged close to the cold junction 13.
【００２７】この発明の図３に示す変更態様において
は、熱電放射線検出器は熱起電力の方向と同方向に直列
に導体２０で接続した２個の熱電池１９、２１から成っ
ている。一方の熱電池１９は主熱電池で、他方の熱電池
２１は副熱電池である。さらに、副熱電池２１には開口
６’を備える副基板２’と副支持フィルム１０’とが接
続してあり、副熱電池２１はこの副支持フィルム１０’
に取り付けてある。副基板２’は主熱電池１９の基板
２、本体１及び光フィルタ３と熱伝導要素９で接続して
ある。In the variant of the invention shown in FIG. 3, the thermoelectric radiation detector consists of two thermal cells 19, 21 connected in series by conductors 20 in the same direction as the direction of thermoelectromotive force. One thermal battery 19 is a main thermal battery and the other thermal battery 21 is a sub thermal battery. Further, the sub-thermal battery 21 is connected to the sub-substrate 2'having the opening 6'and the sub-supporting film 10 ', and the sub-thermal battery 21 has the sub-supporting film 10'.
It is attached to. The sub-board 2 ′ is connected to the board 2, the main body 1 and the optical filter 3 of the main thermal battery 19 by the heat conducting element 9.
【００２８】図４に示す実施態様においては、熱電放射
線検出器は開口付の外部ハウジング２２と本体１と外部
ハウジングの間の熱絶縁体２３と、熱電池と本体１との
間に配置した放射線の反射器２４とから成っている。反
射器２４は凹面鏡の形にしてある。In the embodiment shown in FIG. 4, the thermoelectric radiation detector comprises an outer housing 22 with an opening, a heat insulator 23 between the main body 1 and the outer housing, and a radiation arranged between the thermal battery and the main body 1. It consists of a reflector 24. The reflector 24 is in the form of a concave mirror.
【００２９】[0029]
【発明の作動】この発明の熱電放射線検出器の作動は次
の通りである。測定する放射線の流れはフィルタ３を通
り黒化した受光部７で吸収されて、受光部７の温度が上
昇する。これによって熱流が生じ、この流れは熱電池の
熱接点１５を通り、熱接点１５の温度を上昇させる。そ
れによって、熱電池１１の導線上に電圧が発生し、熱電
検出器の信号として使用される。信号の値は放射線の出
力と冷接点１３温度と、熱電検出器の信号ドリフト及び
その誤差を定める各種の係数とによって決まるものであ
る。OPERATION OF THE INVENTION The operation of the thermoelectric radiation detector of the present invention is as follows. The flow of the radiation to be measured passes through the filter 3 and is absorbed by the blackened light receiving portion 7, so that the temperature of the light receiving portion 7 rises. This creates a heat flow which passes through the hot contacts 15 of the thermal cell and raises the temperature of the hot contacts 15. As a result, a voltage is generated on the lead wire of the thermal battery 11 and used as a signal for the thermoelectric detector. The value of the signal is determined by the radiation output, the temperature of the cold junction 13, the signal drift of the thermoelectric detector and various coefficients that determine its error.
【００３０】冷接点１３が配置してある基板２の温度伝
導率が高いために、基板２は素子１２、１６の放射部に
露出していない冷接点に近接する好ましからぬ温度差を
軽減し、冷接点１３間の好ましくない温度差を平均化す
る。Due to the high thermal conductivity of the substrate 2 on which the cold junction 13 is arranged, the substrate 2 reduces the undesired temperature difference near the cold junction which is not exposed to the radiating parts of the elements 12, 16. The undesired temperature difference between the cold junctions 13 is averaged.
【００３１】基板２の開口の鏡面はその表面に向かう放
射線を集中し、その放射線を黒化した受光部７に向かわ
せて、検出器の信号を増加させる。The mirror surface of the opening of the substrate 2 concentrates the radiation directed to the surface thereof and directs the radiation toward the blackened light receiving portion 7 to increase the signal of the detector.
【００３２】熱伝導要素９はその熱伝導率が高いため
に、冷接点１３、基板２、本体１及びフィルタ３の間に
好ましくない温度差を招かない。Due to its high thermal conductivity, the heat-conducting element 9 does not introduce an undesired temperature difference between the cold junction 13, the substrate 2, the body 1 and the filter 3.
【００３３】熱伝導要素６の開口の鏡面はその表面に向
かう放射線を集中し、その放射線を黒化した受光部７に
向かわせて、検出器の信号を増加させる。その際に、鏡
面による放射線の集中によって検出器の出力信号がさら
に増加する。The mirror surface of the aperture of the heat-conducting element 6 concentrates the radiation towards its surface and directs it towards the blackened light-receiving part 7 and increases the signal of the detector. At that time, the output signal of the detector is further increased by the concentration of radiation by the mirror surface.
【００３４】本体１内の不活性ガスの大気圧と比べて熱
電池の熱接点１５からの熱損失が低下し、検出器の感度
が増加する。As compared with the atmospheric pressure of the inert gas in the main body 1, the heat loss from the thermal contact 15 of the thermal battery is reduced, and the sensitivity of the detector is increased.
【００３５】この発明の特別な実施態様においては、素
子１２、１６に金属被覆が施してあり、この金属被覆に
よって放射線に露呈しない素子の部分の電気抵抗を軽減
するようにしてある。In a special embodiment of the invention, the elements 12, 16 are provided with a metallization which reduces the electrical resistance of the parts of the element which are not exposed to radiation.
【００３６】この発明のサーモレジスタを具備する実施
態様においては、これを熱電池信号の冷接点の温度の偏
向の影響を補償する周知の方法として用いている。また
図２に示す小さいサーミスタ１８を具備する実施態様に
おいては、このサーミスタ１８を熱電池信号の冷接点１
８の温度の偏向の影響を補償するのに用いている。In the thermoresistor embodiment of the present invention, this is used as a well known method of compensating for the effects of cold junction temperature deflection of the thermal battery signal. Further, in the embodiment including the small thermistor 18 shown in FIG. 2, this thermistor 18 is used as the cold junction 1 for the thermal battery signal.
8 is used to compensate for the effect of temperature deviation.
【００３７】図３に示すこの発明の変更態様において使
用されている副熱電池２１は、主熱電池１９の素子の表
面から流れる熱を用いるためのものである。この熱の流
れは検出器の作動中に、主熱電池１９の放射部に露出さ
れた部分が温度上昇することによって生ずるのであっ
て、この熱の流れは副熱電池２１の熱接点へ送られる。
副熱電池２１の熱接点が加熱されると、その熱起電力が
主熱電池１９の熱起電力と合わさって、検出器の全体の
出力信号と感度とを増加させる。この際における主熱電
池１９の作動は図１に示すこの発明の実施態様の熱電池
の作動と同様である。The auxiliary thermal battery 21 used in the modified embodiment of the present invention shown in FIG. 3 is for using the heat flowing from the surface of the element of the main thermal battery 19. This heat flow is caused by a rise in temperature of the exposed portion of the main thermal battery 19 during the operation of the detector, and this heat flow is sent to the thermal contact of the auxiliary thermal battery 21. .
When the thermal contact of the secondary thermal battery 21 is heated, its thermoelectromotive force combines with the thermal electromotive force of the main thermal battery 19 to increase the overall output signal and sensitivity of the detector. The operation of the main thermal battery 19 at this time is the same as the operation of the thermal battery of the embodiment of the present invention shown in FIG.
【００３８】図４に示す検出器の作動も図１に示す実施
態様の作動と同様である。外部ハウジング２２は検出器
の作動に対する外部の妨害を除き、検出器を使用する光
学装置の他の構成部分と接続するためのものである。外
部ハウジング２２と内部の本体１との間の熱絶縁体２３
は、その熱伝導率が低いことによって、検出器の信号ド
リフトを軽減して外部熱妨害を除くものである。図４に
示す実施態様に使用されている反射器２４は熱電池の素
子の表面から流れる放射線を反射させるためのものであ
る。この放射線の反射は、検出器の作動中に熱電池の放
射部に露出した部分の温度が上昇することによって生ず
るのである。凹面鏡に構成してある反射器２４は前記の
放射線の流れの一部を熱電池の熱接点にもどし、熱損失
を少なくするとともに検出器の感度を高めるものであ
る。The operation of the detector shown in FIG. 4 is similar to that of the embodiment shown in FIG. The outer housing 22 is intended to connect to other components of the optical system that use the detector, except for external interference with the operation of the detector. Thermal insulator 23 between the outer housing 22 and the inner body 1
The low thermal conductivity reduces the signal drift of the detector and eliminates external thermal interference. The reflector 24 used in the embodiment shown in FIG. 4 is for reflecting radiation flowing from the surface of the thermal cell device. This reflection of radiation is caused by a rise in the temperature of the exposed part of the thermal cell during the operation of the detector. The reflector 24, which is configured as a concave mirror, returns a part of the flow of the radiation to the thermal contact of the thermal battery to reduce the heat loss and enhance the sensitivity of the detector.
【００３９】[0039]
【発明の効果】この発明によって、ＢｉＴｅ系の熱伝材
料を写真平版による技法を用いて製造した熱電池を使用
して熱電放射線検出器を製作してテストした。フィルの
厚さは約０．９−１μｍとし、支持ポリマイドフィルム
の厚さは０．１５μｃｍとした。検出器の感度は約２８
０Ｖ／Ｗで、基板の１ｍｍの直径の開口についての時定
数は５０ｍｓであった。周囲の急激な温度変化１Ｋに対
する検出器の信号のゼロ点ドリフトは毎秒１００ｎＶ以
下であった。検出器の出力信号のドリフトは毎秒０．０
８％以下であった。この検出器を放射温度計および放射
計に使用した場合の測定温度は的確で、熱の流れは０．
５％以上滞ることがなかった。INDUSTRIAL APPLICABILITY According to the present invention, a thermoelectric radiation detector was manufactured and tested using a thermal battery in which a BiTe-based heat transfer material was manufactured using a photolithographic technique. The thickness of the fill was about 0.9-1 μm, and the thickness of the supporting polyimide film was 0.15 μcm. The sensitivity of the detector is about 28
At 0 V / W, the time constant for a 1 mm diameter opening in the substrate was 50 ms. The zero-point drift of the signal of the detector for a rapid temperature change of 1 K in the surroundings was 100 nV or less per second. The detector output signal drifts 0.0 per second
It was 8% or less. When this detector is used in radiation thermometers and radiometers, the measured temperature is accurate and the heat flow is 0.
There was no delay of more than 5%.
【図１】この発明の熱電放射線検出器の一実施態様を説
明する断面図である。FIG. 1 is a sectional view illustrating an embodiment of a thermoelectric radiation detector of the present invention.
【図２】サーミスタを配した熱電放射線検出器の一部の
拡大断面図である。FIG. 2 is an enlarged cross-sectional view of a part of a thermoelectric radiation detector provided with a thermistor.
【図３】この発明の熱電放射線検出器の別の実施態様を
説明する断面図である。FIG. 3 is a cross-sectional view explaining another embodiment of the thermoelectric radiation detector of the present invention.
【図４】この発明の熱電放射線検出器のさらに別の実施
態様を説明する断面図である。FIG. 4 is a sectional view for explaining still another embodiment of the thermoelectric radiation detector of the present invention.
１ 本体 ２ 基板 ３ 光フィルタ ４ 開口 ５、６ 放射線の流れを伝送する開口 ７ 黒化した受光部 ８ 鏡面 ９ 熱伝導要素 １０ フィルム １１ リード線 １２ 熱電池の素子 １３ 冷接点 １４ 金属被覆 １５ 熱接点 １６ 熱電池の素子 １７ フィルムサーモレジスタ １８ サーミスタ １９ 電池 ２０ 導線 ２１ 電池 ２２ 外部ハウジング ２３ 熱絶縁体 ２４ 反射器 1 Main body 2 Substrate 3 Optical filter 4 Opening 5 and 6 Opening for transmitting the flow of radiation 7 Blackened light receiving part 8 Mirror surface 9 Heat conduction element 10 Film 11 Lead wire 12 Thermal battery element 13 Cold junction 14 Metal coating 15 Thermal junction 16 Thermal Battery Element 17 Film Thermoresistor 18 Thermistor 19 Battery 20 Conductor 21 Battery 22 External Housing 23 Thermal Insulator 24 Reflector
───────────────────────────────────────────────────── フロントページの続き (72)発明者 ニコライ コンスタンチノヴィッチ チプ コ ウクライナ国 274000 チェルノフツイ ドゥビンスカヤ ９アー （番地なし) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Nikolai Konstantinovich Chipko Ukraine 274000 Chernovtsy Dubinskaya 9 Ar (No address)
Claims (17)
製した熱電池と、（ｂ）前記素子を接続する熱接点と冷
接点と、（ｃ）放射線の流れを伝送する開口を備えた基
板と、（ｄ）前記熱電池の接点を配置する前記基板の開
口をカバーする支持フィルムと、（ｅ）開口を有する本
体と、（ｆ）前記本体の開口をカバーする光フィルタ
と、（ｇ）リード線とから成り、前記基板を１．８Ｗ／
ｃｍ・Ｋ以上の熱伝導率を有する金属製としたことを特
徴とする熱電放射線検出器。1. A thermoelectric cell made of thermoelectric elements made of two different materials, (b) a hot contact and a cold contact for connecting the elements, and (c) an opening for transmitting a flow of radiation. A substrate provided with; (d) a support film that covers the opening of the substrate in which the contacts of the thermal battery are arranged; (e) a main body having an opening; and (f) an optical filter that covers the opening of the main body. (G) It is composed of a lead wire and the substrate is 1.8 W /
A thermoelectric radiation detector characterized by being made of a metal having a thermal conductivity of cm · K or more.
１に記載の熱電放射線検出器。2. The thermoelectric radiation detector according to claim 1, wherein the substrate is made of aluminum.
る請求項１に記載の熱電放射線検出器。3. The thermoelectric radiation detector according to claim 1, wherein the substrate is made of a metal containing aluminum.
熱電放射線検出器。4. The thermoelectric radiation detector according to claim 1, wherein the substrate is made of copper.
円錐の前記基板の表面についてなす母線の角度を約９０
度乃至４５度とする請求項１に記載の熱電放射線検出
器。5. The opening of the substrate is frustoconical, and the angle of a generatrix of the cone with respect to the surface of the substrate is about 90.
The thermoelectric radiation detector according to claim 1, wherein the thermoelectric radiation detector is at a temperature of 45 to 45 degrees.
し、前記鏡面の反射率を前記検出器の波長作動範囲にお
いて０．８以上とする請求項５に記載の熱電放射線検出
器。6. The thermoelectric radiation detector according to claim 5, wherein the opening of the substrate is a truncated cone-shaped mirror surface, and the reflectance of the mirror surface is 0.8 or more in the wavelength operating range of the detector.
線の流れを伝送する開口を有する熱伝導製要素によって
接続して成る請求項１に記載の熱電放射線検出器。7. The thermoelectric radiation detector according to claim 1, wherein the substrate, the main body and the optical filter are connected by a heat conductive element having an opening for transmitting a flow of radiation.
し、前記円錐の前記基板の表面についてなす母線の角度
を約４５度乃至９０度とする請求項７に記載の熱電放射
線検出器。8. The thermoelectric radiation detector according to claim 7, wherein the opening of the heat conductive element is frustoconical, and the angle of the generatrix of the cone with respect to the surface of the substrate is about 45 to 90 degrees. .
鏡面とし、前記鏡面の反射率を前記検出器の波長作動範
囲において０．８以上とする請求項８に記載の熱電放射
線検出器。9. The thermoelectric radiation detection according to claim 8, wherein the opening of the heat conductive element is a truncated conical mirror surface, and the reflectance of the mirror surface is 0.8 or more in the wavelength operating range of the detector. vessel.
を配置して成る請求項１に記載の熱電放射線検出器。10. The thermoelectric radiation detector according to claim 1, wherein a small thermistor is arranged on the support film.
ミスタを配置して成る請求項１に記載の熱電放射線検出
器。11. The thermoelectric radiation detector according to claim 1, wherein a film-like thermistor is arranged on the support film.
体と前記外部ハウジングとの間に熱絶縁体を配置して成
る請求項１に記載の熱電放射線検出器。12. The thermoelectric radiation detector according to claim 1, wherein a heat insulator is arranged between the outer housing having an opening, the main body and the outer housing.
被覆を施して成る請求項１に記載の熱電放射線検出器。13. The thermoelectric radiation detector according to claim 1, wherein a part of the surface of the thermal battery element is coated with a metal.
反射器を設けて成る請求項１に記載の熱電放射線検出
器。14. The thermoelectric radiation detector according to claim 1, further comprising a radiation reflector provided between the thermal battery and the main body.
項１４に記載の熱電放射線検出器。15. The thermoelectric radiation detector according to claim 14, wherein the reflector is in the shape of a concave mirror.
熱電池とを直列に接続し、さらに放射線の流れを伝送す
る開口を有する副基板と副支持フィルムとを設け、前記
副基板に副熱電池の接点を配置し、前記副基板を前記熱
伝導性要素によって主熱電池の基板と、前記本体と前記
フィルタとに接続して成る請求項５に記載の熱電放射線
検出器。16. A main substrate and a sub-thermal battery are connected in series in the same direction of thermoelectromotive force, and a sub-substrate having an opening for transmitting a flow of radiation and a sub-supporting film are provided, and the sub-substrate is provided. The thermoelectric radiation detector according to claim 5, wherein a contact of the sub-thermal battery is arranged in the sub-thermal battery, and the sub-substrate is connected to the substrate of the main thermal battery, the main body and the filter by the heat conductive element.
０-3ｍｍＨｇ以上の圧力の不活性ガスを充填して成る請
求項１に記載の熱電放射線検出器。17. The inside of the main body at atmospheric pressure or less,
The thermoelectric radiation detector according to claim 1, which is filled with an inert gas having a pressure of 0 -3 mmHg or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6335405A JPH08178742A (en) | 1994-12-22 | 1994-12-22 | Thermoelectric radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6335405A JPH08178742A (en) | 1994-12-22 | 1994-12-22 | Thermoelectric radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08178742A true JPH08178742A (en) | 1996-07-12 |
Family
ID=18288181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6335405A Pending JPH08178742A (en) | 1994-12-22 | 1994-12-22 | Thermoelectric radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08178742A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0732207A (en) * | 1993-07-22 | 1995-02-03 | Nissan Kohki Co Ltd | Turning device |
| JP2014169924A (en) * | 2013-03-04 | 2014-09-18 | Mikuni Corp | Temperature measurement instrument |
-
1994
- 1994-12-22 JP JP6335405A patent/JPH08178742A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0732207A (en) * | 1993-07-22 | 1995-02-03 | Nissan Kohki Co Ltd | Turning device |
| JP2014169924A (en) * | 2013-03-04 | 2014-09-18 | Mikuni Corp | Temperature measurement instrument |
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