JPH08162304A - Electronic part and its manufacture - Google Patents

Electronic part and its manufacture

Info

Publication number
JPH08162304A
JPH08162304A JP6298384A JP29838494A JPH08162304A JP H08162304 A JPH08162304 A JP H08162304A JP 6298384 A JP6298384 A JP 6298384A JP 29838494 A JP29838494 A JP 29838494A JP H08162304 A JPH08162304 A JP H08162304A
Authority
JP
Japan
Prior art keywords
protective film
electronic component
needle
substance
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6298384A
Other languages
Japanese (ja)
Other versions
JP3036380B2 (en
Inventor
Iwao Ueno
巌 上野
Yasuo Wakahata
康男 若畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6298384A priority Critical patent/JP3036380B2/en
Publication of JPH08162304A publication Critical patent/JPH08162304A/en
Application granted granted Critical
Publication of JP3036380B2 publication Critical patent/JP3036380B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE: To obtain protective films having high adhesion strength, and strong to heat and impulses by forming protective films with scattered needlelike crystal components on the periphery of an element, diffusing the components of these protective films between the element surface and the protective films, and providing diffusion layers. CONSTITUTION: A plurality of internal electrodes 2 are provided in a varistor element 1, and external electrodes 3 are provided on both ends of the element. Protective films 4 being scattered needlelike crystal components are formed by adhesion, on both upper and lower surfaces of the varistor element 1 and on a part of the surface of the upper layer 3b touching those surfaces. Besides, layers 5 in which components of the protective films 4 have diffused are formed on the surface of the varistor element 1. These layers 5 contain at least one kind of Si, Ti, and Al. Here, the needlelike crystal components contain at least one kind of Al2 O3 , TiO2 , ZnO, SiC, Si3 N4 , SiO2 , carbon fiber, and glass fiber.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電子部品とその製造方
法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component and its manufacturing method.

【0002】[0002]

【従来の技術】従来より、素子を外部雰囲気より保護す
るために、その外周部に保護膜を設けることが行われて
いる。
2. Description of the Related Art Conventionally, in order to protect an element from the outside atmosphere, a protective film is provided on the outer peripheral portion of the element.

【0003】[0003]

【発明が解決しようとする課題】従来の保護膜は、例え
ばガラスを素子の外周部に塗布することにより形成され
たものであったが、その接着強度が低いという問題があ
った。即ち、ガラスは素子の外表面に単に付着している
だけであったので、衝撃や熱による膨張収縮により、剥
離したり、クラックが発生してしまうのであった。そこ
で本発明は、付着強度が高く、また熱や衝撃にも強い保
護膜を有する電子部品を提供することを目的とするもの
である。
The conventional protective film has been formed by coating glass on the outer peripheral portion of the element, for example, but it has a problem of low adhesive strength. That is, since the glass was simply attached to the outer surface of the element, it was peeled off or cracked due to expansion and contraction due to impact or heat. Therefore, it is an object of the present invention to provide an electronic component having a protective film that has high adhesion strength and is resistant to heat and impact.

【0004】[0004]

【課題を解決するための手段】そして、この目的を達成
するために本発明は、素子の外周に針状の結晶成分を分
散させた保護膜を形成すると共に、この素子表面と保護
膜との間に、この保護膜の成分を拡散させて、拡散層を
設けるものである。
In order to achieve this object, the present invention forms a protective film in which needle-like crystal components are dispersed on the outer periphery of the device, and at the same time, the device surface and the protective film are formed. In between, a component of the protective film is diffused to provide a diffusion layer.

【0005】[0005]

【作用】上記構成とすれば、(1)保護膜の一部が素子
表面に拡散しているので、結論として保護膜の素子に対
する付着強度が極めて強い。その上、水分等が素子内部
へ浸入するのを防ぐことができる。(2)保護膜に針状
の結晶成分が分散しており、仮にクラックが発生したと
してもクラックの広がりを阻止し、結論として、熱や衝
撃に強い保護膜を形成することができる。
With the above structure, (1) since a part of the protective film is diffused on the surface of the device, the conclusion is that the adhesion strength of the protective film to the device is extremely strong. Moreover, it is possible to prevent moisture and the like from entering the inside of the element. (2) The acicular crystal component is dispersed in the protective film, and even if a crack occurs, the crack is prevented from spreading, and as a result, a protective film resistant to heat and impact can be formed.

【0006】以上のように、耐湿性、耐熱衝撃性に優れ
た電子部品を提供することができる。
As described above, it is possible to provide an electronic component having excellent moisture resistance and thermal shock resistance.

【0007】[0007]

【実施例】【Example】

(実施例1)以下、本発明の第1の実施例について、図
面を用いて説明する。
(First Embodiment) A first embodiment of the present invention will be described below with reference to the drawings.

【0008】図1において、1はバリスタ素子で、その
内部には複数の内部電極2が設けられ、その両端には外
部電極3が設けられている。バリスタ素子1は、SrT
iO 3を主成分とし、副成分としてNb25,Ta
25,SiO2,MnO2などを添加して形成したもので
ある。また内部電極2はNiを主成分とし、副成分とし
てLi2CO3などを添加して形成したものである。さら
に外部電極3は、下層3aをNiを主成分とし、副成分
としてLi2CO3などを添加して形成し、上層3bをA
gで形成したものである。以上の構成において、バリス
タ素子1の上、下両面およびそれに接する上層3b表面
の一部には、針状の結晶成分を分散させた保護膜4が付
着形成されている。
In FIG. 1, reference numeral 1 is a varistor element,
A plurality of internal electrodes 2 are provided inside, and both ends are
The partial electrode 3 is provided. Varistor element 1 is SrT
iO 3As the main component and Nb as the sub-component2OFive, Ta
2OFive, SiO2, MnO2It is formed by adding
is there. The internal electrode 2 has Ni as a main component and a sub-component as
Li2CO3It is formed by adding Further
In the external electrode 3, the lower layer 3a is mainly composed of Ni
As Li2CO3To form the upper layer 3b.
It is formed by g. With the above configuration,
Upper and lower surfaces of the switching element 1 and the surface of the upper layer 3b in contact therewith
A protective film 4 in which needle-shaped crystal components are dispersed is attached to a part of the
Is formed.

【0009】また、ここで、バリスタ素子1表面に、保
護膜4の成分が拡散した層5が形成されており、この層
5は、Si,Ti,Alの少なくとも一種類以上を含む
構造となっている。従って、バリスタ素子1は、その外
表面を針状の結晶成分を分散させた保護膜4および外部
電極3で覆われ、しかも、バリスタ素子1の表面に、保
護膜4の成分が拡散した層5が介在しているので、その
気密性は極めて高く、水分などからの保護が確実に行う
ことができると共に、針状の結晶成分が保護膜4のクラ
ック発生を阻止する機能と、バリスタ素子1との付着を
強固にするアンカー効果の機能を有するために熱衝撃に
強い保護膜4が形成できる。
Further, here, a layer 5 in which the components of the protective film 4 are diffused is formed on the surface of the varistor element 1, and the layer 5 has a structure containing at least one kind of Si, Ti and Al. ing. Therefore, the varistor element 1 has its outer surface covered with the protective film 4 and the external electrode 3 in which needle-like crystal components are dispersed, and the layer 5 in which the components of the protective film 4 are diffused on the surface of the varistor element 1. Since it is interposed, its airtightness is extremely high, so that it can be surely protected from moisture and the like, and at the same time, the acicular crystal component prevents cracking of the protective film 4, and the varistor element 1 and Since it has a function of an anchor effect that strengthens the adhesion of the above, the protective film 4 that is resistant to thermal shock can be formed.

【0010】図2は、製造工程を示し、(5)に示すご
とく、原料の混合、粉砕、スラリー化、シート成形によ
り、セラミックシート1aを作製した。
FIG. 2 shows a manufacturing process. As shown in (5), a ceramic sheet 1a was produced by mixing raw materials, pulverizing, slurrying, and sheet forming.

【0011】セラミックシート1aと、内部電極2とを
積層(6)し、それを切断(7)、脱バイ・仮焼
(8)、面とり(9)した。
A ceramic sheet 1a and an internal electrode 2 were laminated (6), which was cut (7), de-baked / calcined (8) and chamfered (9).

【0012】次に、バリスタ素子1の端面に、下層3a
となるNi外部電極を塗布(10)し、1200〜13
00℃で還元焼成(11)し、その後、下層3aの上
に、上層3bとなるAg外部電極を塗布(12)し、7
00〜850℃で再酸化のため加熱(13)した。次
に、再酸化したバリスタ素子1を保護膜形成用物質を含
む液体中に浸漬し、バリスタ素子1の表面に保護膜形成
用物質を付着(14)した。
Next, the lower layer 3a is formed on the end face of the varistor element 1.
Ni external electrode to be applied is applied (10), and 1200 to 13
Reduction baking is performed at 00 ° C. (11), and then an Ag external electrode to be the upper layer 3b is applied (12) on the lower layer 3a, and 7
Heat (13) to reoxidize at 00-850 ° C. Next, the reoxidized varistor element 1 was immersed in a liquid containing a protective film forming substance, and the protective film forming substance was attached (14) to the surface of the varistor element 1.

【0013】その後、図3に示す受皿18上に、セラミ
ック製の板19を設け、その上に、バリスタ素子1を粉
体20内に埋設し、200〜600℃で熱処理(15)
した。
Thereafter, a ceramic plate 19 is provided on the pan 18 shown in FIG. 3, and the varistor element 1 is embedded in the powder 20 on the plate 19 and heat-treated at 200 to 600 ° C. (15).
did.

【0014】ここで粉体20は、Al23,TiO2
ZnO,SiC,Si34,SiO2,炭素繊維,ガラ
ス繊維の少なくとも一種類以上を含む針状の結晶成分よ
り構成される粉末である。
Here, the powder 20 is made of Al 2 O 3 , TiO 2 ,
It is a powder composed of needle-like crystal components containing at least one kind of ZnO, SiC, Si 3 N 4 , SiO 2 , carbon fiber and glass fiber.

【0015】またこの粉体20に、Bi23,Sb23
の少なくとも一方を混合することにより拡散性がよくな
る。
The powder 20 is mixed with Bi 2 O 3 and Sb 2 O 3
By mixing at least one of the above, the diffusivity is improved.

【0016】そして、保護膜形成用物質を含む液体とし
て、Si(OR)4(Rはアルキル基),(化4)で表
されるケイ素化合物、Ti(OR)4(Rはアルキル
基),(化5)で表されるチタン化合物、Al(OR)
3(Rはアルキル基),(化6)で表されるアルミ化合
物のうちから少なくとも一種類以上と、ガラス質形成用
物質としてNa,Si,B,Bi,Sb,Pb等からな
る物質と、有機バインダーとしてポリビニルアルコー
ル、エチルセルロース、ブチラール樹脂等と、アルコー
ル、ケトン、エーテル等の有機溶剤とを混合したものを
用いた。
As the liquid containing the substance for forming a protective film, Si (OR) 4 (R is an alkyl group), a silicon compound represented by Chemical formula 4 , Ti (OR) 4 (R is an alkyl group), Titanium compound represented by Chemical formula 5, Al (OR)
3 (R is an alkyl group), at least one or more of the aluminum compounds represented by (Chemical Formula 6), and a substance composed of Na, Si, B, Bi, Sb, Pb, etc. as a glass forming substance, As the organic binder, a mixture of polyvinyl alcohol, ethyl cellulose, butyral resin and the like and an organic solvent such as alcohol, ketone and ether was used.

【0017】[0017]

【化4】 [Chemical 4]

【0018】[0018]

【化5】 Embedded image

【0019】[0019]

【化6】 [Chemical 6]

【0020】また、この液体に、予め針状の結晶成分を
分散させたものを用いると、保護膜4が形成されやすく
なるとともに、バリスタ素子1同士が、くっつきにくく
なる。
If a liquid in which needle-like crystal components are dispersed in advance is used for this liquid, the protective film 4 is easily formed and the varistor elements 1 are less likely to stick to each other.

【0021】その後、面とり(16)、メッキ(17)
を行うことにより図1に示すごとく、針状の結晶成分が
分散した保護膜4と、保護膜4の成分が拡散した層5を
有する電子部品を得た。
After that, chamfering (16) and plating (17)
By performing the above, as shown in FIG. 1, an electronic component having a protective film 4 in which needle-shaped crystal components were dispersed and a layer 5 in which the components of the protective film 4 were diffused was obtained.

【0022】(実施例2)以下、本発明の第2の実施例
について、図面を用いて説明する。
(Second Embodiment) A second embodiment of the present invention will be described below with reference to the drawings.

【0023】実施例1と同様にして、再酸化のため加熱
(13)したバリスタ素子1を、予め実施例1で説明し
た針状の結晶成分の粉末を分散させた保護膜形成用物質
を含む液体中に浸漬し、バリスタ素子1の表面に保護膜
形成用物質と針状の結晶成分とを付着(14)した。
In the same manner as in Example 1, the varistor element 1 heated (13) for reoxidation contains the protective film forming substance in which the powder of the needle-shaped crystal component described in Example 1 is dispersed. By immersing in a liquid, a substance for forming a protective film and a needle-shaped crystal component were attached (14) to the surface of the varistor element 1.

【0024】その後、図4に示すように、Ni製のアミ
21の上にのせ200〜600℃で熱処理(15)し
た。その後、面とり(16)、メッキ(17)を行い、
図1に示すごとく電子部品を得た。
Then, as shown in FIG. 4, it was placed on a nickel net 21 and heat-treated (15) at 200 to 600.degree. After that, chamfering (16) and plating (17) are performed,
An electronic component was obtained as shown in FIG.

【0025】この時、熱処理(15)において、図3に
示すようにバリスタ素子1を粉体20内に埋設させて行
ってもよいものである。
At this time, in the heat treatment (15), the varistor element 1 may be embedded in the powder 20 as shown in FIG.

【0026】(実施例3)以下に、本発明の第3の実施
例について説明する。
(Embodiment 3) A third embodiment of the present invention will be described below.

【0027】実施例1と同様にして、再酸化のため加熱
(13)したバリスタ素子1を、図3に示すように、粉
体20内に埋設し、保護膜形成用物質を含む液体を粉体
の上から浸透させて200〜600℃で熱処理(15)
し、保護膜4を形成し、その後、面とり(16)、メッ
キ(17)を行い図1に示す電子部品を得た。
In the same manner as in Example 1, the varistor element 1 heated (13) for reoxidation is embedded in the powder 20 as shown in FIG. 3, and the liquid containing the protective film forming substance is powdered. Permeate from above the body and heat-treat at 200-600 ℃ (15)
Then, the protective film 4 was formed, and then chamfering (16) and plating (17) were performed to obtain the electronic component shown in FIG.

【0028】以上、実施例1〜3を行うことにより、付
着強度が高く、また熱や衝撃にも強い保護膜4を有する
電子部品を得ることができた。
As described above, by carrying out Examples 1 to 3, it was possible to obtain an electronic component having a protective film 4 having high adhesive strength and being resistant to heat and impact.

【0029】ここで、実施例1〜3で得られた保護膜4
の特徴について記載すると (1)バリスタ素子1の表面には、その表面から1〜2
μm程度の均一な膜厚を有する保護膜4と、バリスタ素
子1の表面に1μm程度の拡散した層5により形成され
ていた。ここで保護膜4の厚みが3μmを超えると剥離
しやすく付着強度が低下し、逆に1μm未満では、膜厚
が不均一となり耐湿性劣化の要因となった。また、膜圧
は有機溶剤の量により調整することができる。
Here, the protective film 4 obtained in Examples 1 to 3
(1) The surface of the varistor element 1 should be 1-2 from the surface.
The protective film 4 has a uniform film thickness of about μm, and the diffused layer 5 of about 1 μm is formed on the surface of the varistor element 1. Here, when the thickness of the protective film 4 exceeds 3 μm, peeling is likely to occur and the adhesion strength is lowered, and conversely, when it is less than 1 μm, the film thickness becomes non-uniform, which is a factor of deterioration of moisture resistance. The film pressure can be adjusted by the amount of organic solvent.

【0030】(2)針状の結晶成分は、保護膜4に均一
に分散していた。針状の結晶成分が分散した保護膜4と
分散していない保護膜を比較したところ、熱衝撃性に大
きな差異があった。例えば、−55〜125℃の温度サ
イクル試験を行ったところ、前者の保護膜4では、クラ
ックや剥離は見出せなかったが、後者の保護膜では、外
電3bの近傍でクラックが多数発生し、耐湿性劣化の要
因となった。この理由は、針状の結晶成分が、クラック
の伝播を抑えかつアンカー効果によりバリスタ素子1と
の付着強度をより強固にしているものと考えられる。
(2) The acicular crystal component was uniformly dispersed in the protective film 4. When the protective film 4 in which the needle-shaped crystal components are dispersed and the protective film in which the crystalline components are not dispersed are compared with each other, there is a large difference in thermal shock resistance. For example, when a temperature cycle test of −55 to 125 ° C. was performed, cracks and peeling were not found in the former protective film 4, but in the latter protective film, a large number of cracks were generated in the vicinity of the external electricity 3b, and the moisture resistance was high. It became a factor of sexual deterioration. The reason for this is considered to be that the needle-shaped crystal component suppresses crack propagation and further strengthens the adhesion strength with the varistor element 1 by the anchor effect.

【0031】(3)保護膜4と、この保護膜4の成分が
一部拡散して形成された層5は、高抵抗であるので、マ
イグレーションが発生することはない。
(3) Since the protective film 4 and the layer 5 formed by partially diffusing the components of the protective film 4 have high resistance, migration does not occur.

【0032】(4)保護膜4は、メッキ(17)時に、
メッキ流れを起こさず、かつ、メッキ流れにより侵され
ることのない耐酸性に優れたものである。
(4) The protective film 4 is formed by plating (17).
It has an excellent acid resistance that does not cause plating flow and is not affected by the plating flow.

【0033】なお、実施例1〜3において、保護膜形成
物質の付着、熱処理を1回しか行わなかったが、複数回
(2,3回)特に付着を2,3回行った方が均一な膜厚
の保護膜4が形成された。また、保護膜形成物質や、粉
体20にBi23,Sb23の少なくとも一方を添加す
ると拡散した層5がより容易に形成された。さらに、実
施例1〜3においては、外部電極3の外表面にも保護膜
4が形成されるので、導通をはかるため、面とり(1
6)を行い、外部電極3b上の保護膜4を取り除く。そ
の後、外部電極3b表面にNiメッキ、半田メッキ(1
7)を行うとよい。
In Examples 1 to 3, the protective film-forming substance was deposited and heat-treated only once, but it was more uniform if it was deposited a plurality of times (2 or 3 times), especially 2 or 3 times. The protective film 4 having a film thickness was formed. Further, when the protective film forming substance or at least one of Bi 2 O 3 and Sb 2 O 3 was added to the powder 20, the diffused layer 5 was formed more easily. Furthermore, in Examples 1 to 3, since the protective film 4 is also formed on the outer surface of the external electrode 3, chamfering (1
6) is performed to remove the protective film 4 on the external electrode 3b. After that, Ni plating and solder plating (1
7) should be performed.

【0034】また、実施例1〜3において保護膜形成物
質の付着に関して、その液体中に浸漬する方法のみを示
したが、印刷、溶射でもよく、また遠心分離機を用いて
も同様の効果が得られる。さらに、各実施例では、積層
バリスタを例にあげたが、本発明は、コンデンサ、サー
ミスタ、セラミスタ、バリスタ、圧電素子、フェライ
ト、セラミック基板などのセラミック磁器を用いるも
の、また、その形状も、ディスク型、円筒型、積層形な
ど何にでも適応できるものである。
Also, in Examples 1 to 3, only the method of immersing the protective film forming substance in the liquid was shown, but printing, thermal spraying, or the use of a centrifuge can also produce the same effect. can get. Further, in each embodiment, a laminated varistor is taken as an example, but the present invention uses a ceramic porcelain such as a capacitor, a thermistor, a ceramistor, a varistor, a piezoelectric element, a ferrite, and a ceramic substrate. It can be applied to any type such as a mold, a cylinder type, and a laminated type.

【0035】[0035]

【発明の効果】以上のように本発明は、素子の表面に、
保護膜の成分が拡散した層を形成すると共に、この上
に、針状の結晶成分を分散させた保護膜を設けたもので
あり、上記構成とすれば、保護膜成分が素子表面に拡散
し、また、針状の結晶成分が保護膜のクラックの伝播を
抑え、かつ、アンカー効果を発揮するので、結論として
保護膜の素子に対する付着強度は極めて高く、また同時
に、熱衝撃にも非常に強く、耐湿性、耐熱衝撃性に強い
素子を作製することが出来る。
As described above, according to the present invention, the surface of the device is
In addition to forming a layer in which the components of the protective film are diffused, a protective film in which needle-like crystal components are dispersed is provided on the layer, and with the above configuration, the protective film components diffuse to the element surface. In addition, since the needle-shaped crystal component suppresses the propagation of cracks in the protective film and exerts an anchor effect, the conclusion is that the adhesion strength of the protective film to the element is extremely high, and at the same time, it is very strong against thermal shock. It is possible to manufacture an element having high resistance to humidity and thermal shock resistance.

【0036】また、素子表面に、保護膜の成分が一部拡
散して形成された層と、保護膜は高抵抗であるため外部
電極のマイグレーションやメッキ流れの発生を防止する
ことが出来る。
Further, since the layer formed by partially diffusing the components of the protective film on the surface of the element and the protective film have a high resistance, it is possible to prevent the migration of the external electrodes and the occurrence of plating flow.

【0037】さらに、本発明の保護膜は、無機成分で構
成されているため、耐薬品性や熱にも強く変成すること
はない。
Furthermore, since the protective film of the present invention is composed of an inorganic component, it does not undergo strong modification even with chemical resistance or heat.

【0038】以上のように、本発明の電子部品は、耐湿
性、耐熱衝撃性、耐薬品性に優れたものである。
As described above, the electronic component of the present invention has excellent moisture resistance, thermal shock resistance, and chemical resistance.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例におけるバリスタの断面図FIG. 1 is a sectional view of a varistor according to an embodiment of the present invention.

【図2】本発明の一実施例におけるバリスタの製造工程
FIG. 2 is a manufacturing process diagram of a varistor according to an embodiment of the present invention.

【図3】本発明の一実施例におけるバリスタの製造工程
を示す断面図
FIG. 3 is a sectional view showing a manufacturing process of a varistor according to an embodiment of the present invention.

【図4】本発明の他の実施例におけるバリスタの製造工
程を示す断面図
FIG. 4 is a sectional view showing a manufacturing process of a varistor according to another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 バリスタ素子 2 内部電極 3 外部電極 4 保護膜 5 層 1 Varistor element 2 Internal electrode 3 External electrode 4 Protective film 5 layers

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】 素子と、この素子の表面に設けた電極
と、少なくとも前記素子表面の電極に覆われていない部
分に設けた拡散層と、少なくともこの拡散層の上に設け
た保護膜とを備え、前記拡散層はこの保護膜を形成する
成分と前記素子の成分とを含み、前記保護膜は、針状の
結晶を含んだ電子部品。
1. An element, an electrode provided on the surface of the element, a diffusion layer provided on at least a portion of the element surface not covered by the electrode, and a protective film provided on at least the diffusion layer. The electronic component includes a component forming the protective film and a component of the device, and the protective film includes needle-like crystals.
【請求項2】 保護膜は、Si,Ti,Alの少なくと
も一種類以上を含む請求項1記載の電子部品。
2. The electronic component according to claim 1, wherein the protective film contains at least one kind of Si, Ti and Al.
【請求項3】 針状の結晶が、Al23,TiO2,Z
nO,SiC,Si3 4,SiO2,炭素繊維,ガラス
繊維の少なくとも一種類以上を含む請求項1記載の電子
部品。
3. The needle-shaped crystal is Al2O3, TiO2, Z
nO, SiC, Si3N Four, SiO2, Carbon fiber, glass
The electronic according to claim 1, comprising at least one kind of fiber.
parts.
【請求項4】 表面に保護膜形成用物質を付着させた素
子の外表面に、針状の結晶成分を当接し、加熱する電子
部品の製造方法。
4. A method of manufacturing an electronic component, wherein a needle-like crystal component is brought into contact with an outer surface of an element having a protective film forming substance adhered to the surface to heat the element.
【請求項5】 保護膜形成用物質と針状の結晶成分とを
混合した物質を素子の外表面に当接し、加熱する電子部
品の製造方法。
5. A method of manufacturing an electronic component, which comprises heating a substance obtained by contacting a material obtained by mixing a substance for forming a protective film and a needle-shaped crystal component with the outer surface of the device, and heating.
【請求項6】 保護膜形成用物質を含む液体中に、素子
を浸漬し、次に前記素子を取出した後、針状の結晶成分
を前記素子の外表面に当接し、加熱する電子部品の製造
方法。
6. An electronic component for heating an element by immersing the element in a liquid containing a substance for forming a protective film, then taking out the element, and then bringing a needle-shaped crystal component into contact with the outer surface of the element to heat the element. Production method.
【請求項7】 保護膜形成用物質を含む液体中に、予
め、針状の結晶成分を分散させた請求項6記載の電子部
品の製造方法。
7. The method of manufacturing an electronic component according to claim 6, wherein a needle-shaped crystal component is previously dispersed in a liquid containing a protective film forming substance.
【請求項8】 保護膜形成用物質を含む液体中に、Bi
23,Sb23の少なくとも一方を分散させた請求項6
記載の電子部品の製造方法。
8. A liquid containing a substance for forming a protective film, containing Bi.
7. At least one of 2 O 3 and Sb 2 O 3 is dispersed.
A method for manufacturing the described electronic component.
【請求項9】 液体は、Si(OR)4(Rはアルキル
基),(化1)で表されるケイ素化合物、Ti(OR)
4(Rはアルキル基),(化2)で表されるチタン化合
物、Al(OR)3(Rはアルキル基),(化3)で表
されるアルミ化合物のうち少なくとも一種類以上と、少
なくともガラス質形成用物質と有機バインダーとからな
る添加剤と、有機溶剤により構成される請求項6記載の
電子部品の製造方法。 【化1】 【化2】 【化3】
9. The liquid is Si (OR) 4 (R is an alkyl group), a silicon compound represented by Chemical formula 1, Ti (OR)
4 (R is an alkyl group), a titanium compound represented by (Chemical Formula 2), Al (OR) 3 (R is an alkyl group), at least one or more of an aluminum compound represented by (Chemical Formula 3), and at least 7. The method of manufacturing an electronic component according to claim 6, which is composed of an organic solvent and an additive containing a glass-forming substance and an organic binder. Embedded image Embedded image Embedded image
【請求項10】 針状の結晶成分にさらにBi23とS
23の少なくとも一方を分散させる請求項6記載の電
子部品の製造方法。
10. An acicular crystal component further comprising Bi 2 O 3 and S.
The method of manufacturing an electronic component according to claim 6, wherein at least one of b 2 O 3 is dispersed.
JP6298384A 1994-12-01 1994-12-01 Electronic components and their manufacturing method Expired - Fee Related JP3036380B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6298384A JP3036380B2 (en) 1994-12-01 1994-12-01 Electronic components and their manufacturing method

Publications (2)

Publication Number Publication Date
JPH08162304A true JPH08162304A (en) 1996-06-21
JP3036380B2 JP3036380B2 (en) 2000-04-24

Family

ID=17859006

Family Applications (1)

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Country Status (1)

Country Link
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124007A (en) * 1998-10-13 2000-04-28 Murata Mfg Co Ltd Chip thermistor and method of producing the same
KR100444888B1 (en) * 2002-02-18 2004-08-21 주식회사 쎄라텍 Chip type varistor and fabrication method thereof
KR100822932B1 (en) * 2006-12-19 2008-04-17 주식회사 아모텍 Low capacitance chip device and method of manufacturing the same
CN109627048A (en) * 2018-12-28 2019-04-16 株洲电力机车广缘科技有限责任公司 A kind of method and silicon carbide fibre in silicon carbide fibre growing zinc oxide crystal whisker on surface

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124007A (en) * 1998-10-13 2000-04-28 Murata Mfg Co Ltd Chip thermistor and method of producing the same
US6588094B2 (en) 1998-10-13 2003-07-08 Murata Manufacturing Co., Ltd. Method of producing thermistor chips
KR100444888B1 (en) * 2002-02-18 2004-08-21 주식회사 쎄라텍 Chip type varistor and fabrication method thereof
KR100822932B1 (en) * 2006-12-19 2008-04-17 주식회사 아모텍 Low capacitance chip device and method of manufacturing the same
CN109627048A (en) * 2018-12-28 2019-04-16 株洲电力机车广缘科技有限责任公司 A kind of method and silicon carbide fibre in silicon carbide fibre growing zinc oxide crystal whisker on surface

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